CN110379871B - Photoelectric detector based on graphene - Google Patents
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- CN110379871B CN110379871B CN201910614105.9A CN201910614105A CN110379871B CN 110379871 B CN110379871 B CN 110379871B CN 201910614105 A CN201910614105 A CN 201910614105A CN 110379871 B CN110379871 B CN 110379871B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Light Receiving Elements (AREA)
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Abstract
The invention provides a photoelectric detector based on graphene, which comprises: an oxide substrate layer; a silicon waveguide layer formed on the oxide substrate layer; the silicon waveguide layer comprises a rectangular silicon waveguide and a micro-ring silicon waveguide, wherein the micro-ring silicon waveguide is arranged on the first side of the rectangular silicon waveguide and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide; the graphene layer is arranged on the silicon waveguide layer and covers the rectangular silicon waveguide and the micro-ring-shaped silicon waveguide; the first metal electrode is arranged on one side, covered with the graphene layer, of the silicon waveguide layer and is positioned on the graphene layer; and the second metal electrode is arranged on the other side of the silicon waveguide layer, which is not provided with the graphene layer. The invention can improve the responsivity of the photoelectric detector on the premise of not prolonging the absorption length and not influencing the bandwidth.
Description
Technical Field
The invention relates to the field of photoelectric detection, in particular to a photoelectric detector based on graphene.
Background
In recent years, with the rapid development of the internet of things, the optical fiber communication system is used as an important support for the internet of things, and the development of the optical fiber communication system is more emphasized. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, the construction of trunk transmission networks has been hot in the world, and the transmission bandwidth and the transmission capacity are rapidly developed.
With the development of optical fiber communication systems, the development of optical devices also faces opportunities and challenges, and how to develop optical devices with excellent performance and low price has become a primary problem. Silicon-based optoelectronic devices have the advantages of easy integration, low process cost and the like, and have attracted extensive attention of researchers in recent years. Silicon (Si) material is used as a traditional material in the field of microelectronics, has incomparable advantages of other materials in processing technology and manufacturing cost, and the silicon-based photoelectron integration technology is produced at the same time. The photodetector, one of the important representative elements in silicon-based optoelectronic integration technology, functions to convert an incident optical signal into an electrical signal for analysis by subsequent signal processing circuitry. The silicon-based germanium photoelectric detector is continuously optimized in structure and further improved in performance after being developed for more than ten years.
In recent years, under continuous innovative efforts in academia and industry, various waveguide-integrated silicon-based germanium photodetectors with high performance indexes are continuously proposed, and part of indexes reach the level of commercial three-five detectors.
Graphene, which is a new material, can be applied to photovoltaic devices because of its excellent optical transparency and high electrical conductivity. If the graphene is adopted as a silicon-based integrated light absorption material, the working frequency of the detector is inevitably and greatly improved, so that an optical interconnection and optical communication system with high highway capacity can be prepared.
Graphene can be regarded as a semi-metal material, and is easy to form a schottky junction with a semiconductor. The use of schottky junction photodetectors has been reported many times. However, since the graphene carrier has a zero band gap, the carrier recombination rate is high, which affects the responsivity of the detector. And if the responsivity is improved by increasing the absorption length, the bandwidth is affected because of the growth of the electrode.
Disclosure of Invention
In view of the above, an object of the embodiments of the present invention is to provide a graphene-based photodetector, which can improve the responsivity of the photodetector without extending the absorption length and affecting the bandwidth.
The embodiment of the invention provides a photoelectric detector based on graphene, which comprises:
an oxide substrate layer;
a silicon waveguide layer formed on the oxide substrate layer; the silicon waveguide layer comprises a rectangular silicon waveguide and a micro-ring silicon waveguide, wherein the micro-ring silicon waveguide is arranged on the first side of the rectangular silicon waveguide and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide;
the graphene layer is arranged on the silicon waveguide layer and covers the rectangular silicon waveguide and the micro-ring-shaped silicon waveguide;
the first metal electrode is arranged on one side, covered with the graphene layer, of the silicon waveguide layer and is positioned on the graphene layer;
and the second metal electrode is arranged on the other side of the silicon waveguide layer, which is not provided with the graphene layer.
Preferably, the oxide substrate layer is silicon dioxide.
Preferably, the micro-ring-shaped silicon waveguide comprises a first straight line part, a second straight line part, and a first connecting part and a second connecting part which are semicircular; the first straight line part is parallel to the second straight line part, and the first connecting part and the second connecting part are respectively connected to two ends of the first straight line part and the second straight line part.
Preferably, the graphene layer covers the first and second linear portions of the micro-ring-shaped silicon waveguide.
Preferably, after the signal light is coupled into the micro-ring-shaped silicon waveguide from the rectangular silicon waveguide, the signal light is transmitted in the micro-ring-shaped silicon waveguide and is absorbed by the graphene layer covered on the micro-ring-shaped silicon waveguide for multiple times, so that the response sensitivity of the photodetector is improved.
In the above embodiment, after the signal light is coupled into the micro-ring-shaped silicon waveguide from the rectangular silicon waveguide, the signal light is transmitted inside the micro-ring-shaped silicon waveguide and is absorbed by the graphene layer covered on the micro-ring-shaped silicon waveguide for multiple times, so that the responsivity of the detector can be effectively improved. In addition, because the propagation speed of light in the silicon waveguide and the carrier transmission speed in the graphene are high, the influence of multiple absorption on the device bandwidth of the photoelectric detector can be almost ignored, and the responsivity of the photoelectric detector is improved on the premise that the absorption length is not prolonged and the bandwidth is not influenced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a graphene-based photodetector according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, an embodiment of the present invention provides a graphene-based photodetector, including: :
and an oxide substrate layer.
In this embodiment, the oxide substrate layer may be silicon dioxide, which mainly serves to support the entire photodetector device.
A silicon waveguide layer 20 formed on the oxide substrate layer; the silicon waveguide layer 20 includes a rectangular silicon waveguide 21 and a micro-ring silicon waveguide 22, where the micro-ring silicon waveguide 22 is disposed on a first side of the rectangular silicon waveguide 21, and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide 21.
By arranging the positions of the rectangular silicon waveguide 21 and the micro-ring silicon waveguide 22, a typical micro-ring resonant cavity structure can be formed, so that the signal light transmitted in the rectangular silicon waveguide 21 can be completely coupled into the micro-ring silicon waveguide 22 and transmitted in the micro-ring silicon waveguide 22.
And the graphene layer 30 is arranged on the silicon waveguide layer 20 and covers the rectangular silicon waveguide 21 and the micro-ring-shaped silicon waveguide 23.
Specifically, the micro-ring-shaped silicon waveguide 22 includes a first straight portion 221, a second straight portion 222, and a first connecting portion 223 and a second connecting portion 224 which are semicircular. The first linear portion 221 is parallel to the second linear portion 222, and the first connection portion 223 and the second connection portion 224 are connected to both ends of the first linear portion 221 and the second linear portion 222, respectively. The graphene layer 30 covers the first linear portion 221 and the second linear portion 222 of the micro-ring-shaped silicon waveguide 22.
The graphene layer 30 can form a schottky barrier with a silicon material on an overlying silicon waveguide layer, where the schottky barrier refers to a metal-semiconductor contact having a rectifying characteristic, and is a region having a rectifying effect formed on a metal-semiconductor boundary as if a diode had a rectifying characteristic. In this embodiment, when the graphene layer 30 is covered on the silicon waveguide layer 20, that is, the graphene is P-type, and the silicon is N-type, so that a schottky barrier is formed between the graphene layer 30 and the silicon waveguide layer 20, so as to absorb the signal light and convert the signal light into a current signal.
And the first metal electrode 40 is arranged on one side of the silicon waveguide layer 20 covered with the graphene layer 30 and is positioned on the graphene layer 30.
And a second metal electrode 50 disposed on the other side of the silicon waveguide layer 20 where the graphene layer 30 is not disposed.
The first metal electrode 40 and the second metal electrode 50 may be made of aluminum, gold, silver or other conductive metals. The first metal electrode 40 and the second metal electrode 50 may be made of the same metal material or different metal materials, for example, the first metal electrode 40 may be made of gold or gold-plated electrode, and the second metal electrode 50 may be made of silver or silver-plated electrode, etc., and the present invention is not limited in particular.
In this embodiment, after the signal light is coupled into the micro-ring-shaped silicon waveguide 22 from the rectangular silicon waveguide 21, the signal light can be transmitted in the micro-ring-shaped silicon waveguide 22, and is absorbed multiple times by the graphene layer 30 covered on the micro-ring-shaped silicon waveguide 22 to form current signals, and these current signals pass through the first metal electrode 40 and the second metal electrode 50 and are received by the corresponding current detection device (such as an ammeter). In addition, because the propagation speed of the signal light in the silicon waveguide and the carrier transmission speed in the graphene are high, the influence of multiple times of absorption on the device bandwidth of the photoelectric detector can be almost ignored, and the responsivity of the photoelectric detector is improved on the premise that the absorption length is not prolonged and the bandwidth is not influenced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A graphene-based photodetector, comprising:
an oxide substrate layer;
a silicon waveguide layer formed on the oxide substrate layer; the silicon waveguide layer comprises a rectangular silicon waveguide and a micro-ring silicon waveguide, wherein the micro-ring silicon waveguide is arranged on the first side of the rectangular silicon waveguide and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide;
the graphene layer is arranged on the silicon waveguide layer and covers the rectangular silicon waveguide and the micro-ring-shaped silicon waveguide; the graphene layer and the silicon material on the covered silicon waveguide layer form a Schottky barrier;
the first metal electrode is arranged on one side, covered with the graphene layer, of the silicon waveguide layer and is positioned on the graphene layer;
the second metal electrode is arranged on the other side of the silicon waveguide layer, which is not provided with the graphene layer; after signal light is coupled into the micro-ring-shaped silicon waveguide from the rectangular silicon waveguide, the signal light is transmitted in the micro-ring-shaped silicon waveguide and is absorbed by the graphene layer covered on the micro-ring-shaped silicon waveguide for multiple times, so that the response sensitivity of the photoelectric detector is improved.
2. The graphene-based photodetector of claim 1, wherein the oxide substrate layer is silicon dioxide.
3. The graphene-based photodetector of claim 1, wherein the micro-ring-shaped silicon waveguide comprises a first straight portion, a second straight portion, and a first connecting portion, a second connecting portion in a semi-circular shape; the first straight line part is parallel to the second straight line part, and the first connecting part and the second connecting part are respectively connected to two ends of the first straight line part and the second straight line part.
4. The graphene-based photodetector of claim 3, wherein the graphene layer covers the first and second straight portions of the microring-shaped silicon waveguide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910614105.9A CN110379871B (en) | 2019-07-09 | 2019-07-09 | Photoelectric detector based on graphene |
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| CN201910614105.9A CN110379871B (en) | 2019-07-09 | 2019-07-09 | Photoelectric detector based on graphene |
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| CN110379871B true CN110379871B (en) | 2021-10-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111129168B (en) * | 2019-12-27 | 2021-07-06 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector |
| CN111697087B (en) * | 2020-06-22 | 2022-04-05 | 三明学院 | Photoelectric micro-ring and photoelectric detector |
| CN111628036B (en) * | 2020-07-30 | 2020-11-06 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector with resonant waveguide structure |
| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN113659016A (en) * | 2021-07-14 | 2021-11-16 | 中国科学院微电子研究所 | Photoelectric detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2007105593A1 (en) * | 2006-03-13 | 2007-09-20 | Nec Corporation | Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module |
| CN103531655A (en) * | 2013-10-28 | 2014-01-22 | 鲍桥梁 | Graphene heterojunction optical detector integrated with silicon optical waveguide |
| CN108281443B (en) * | 2018-01-29 | 2021-05-11 | 杭州紫元科技有限公司 | Graphene/silicon heterojunction CCD pixel array based on SOI substrate and preparation method thereof |
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