CN110379866A - Solar battery based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode - Google Patents
Solar battery based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode Download PDFInfo
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- CN110379866A CN110379866A CN201910568118.7A CN201910568118A CN110379866A CN 110379866 A CN110379866 A CN 110379866A CN 201910568118 A CN201910568118 A CN 201910568118A CN 110379866 A CN110379866 A CN 110379866A
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- 238000000926 separation method Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000010405 anode material Substances 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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Abstract
The present invention provides the solar batteries based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode, including GaAs photocathode, vacuum chamber and anode, the anode uses GaN base material, the anode is followed successively by substrate layer, AlN buffer layer, N-shaped varying doping GaN receiving layer from most surface layer to close to vacuum chamber, and wherein AlN buffer growth is on substrate layer；N-shaped varying doping GaN base receiving layer is grown on AlN buffer layer.The present invention uses N-shaped varying doping GaN base receiving layer, inside the anode formed a built in field, increase electronics inside the anode transport rate, improve electronics capacity gauge, inhibit the noise current of anode material, the higher energy conversion of the vacuum separation formula p-n junction solar battery of realization.
Description
Technical field
It is specially a kind of based on vacuum separation formula p-n junction N-shaped GaN base sun the invention belongs to technical field of solar batteries
Pole solar battery.
Background technique
Photovoltaic power generation utilizes the light quantum effect of the short-wave photons of solar radiation, and the electronics in photon excitation material is realized
The conversion of photoelectricity.2010, J.W.Schwede of Stanford Univ USA et al. proposed " photon enhancing thermionic emission
(PETE) " solar battery technology, overcome traditional photovoltaic power generation technology with temperature rise and efficiency decline the shortcomings that, realize
Energy conversion at relatively high temperatures.PETE solar cell device is absorbed using cathode and anode separate structure by cathode
Solar radiation launching electronics, electronics form electric current after being received by anode, complete photoelectric conversion.The PETE battery being directed at present is ground
The photoelectric conversion efficiency for being concentrated mainly on photocathode is studied carefully, for the study limitation in terms of anode in phosphorus doping diamond.And phosphorus
Doped diamond anode there are manufacturing process it is complicated, charge collection efficiency is lower the disadvantages of, using the sun of phosphorus doping diamond
The energy conversion efficiency of energy battery is not high.
Summary of the invention
It is an object of the invention to propose a kind of solar energy based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode
Battery, to improve the energy conversion efficiency of solar battery.
Realize the technical solution of the object of the invention are as follows: one kind is based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode
Solar battery, including GaAs photocathode, vacuum chamber and anode, which is characterized in that the anode uses GaN base material,
The anode is followed successively by substrate layer, AlN buffer layer, N-shaped varying doping GaN receiving layer from most surface layer to close to vacuum chamber.
Preferably, the substrate layer is Sapphire Substrate.
Preferably, the AlN buffer growth is on substrate layer, with a thickness of 50-75nm.
Preferably, the N-shaped varying doping GaN base receiving layer is grown on AlN buffer layer in the way of MOCVD, with a thickness of
200-300nm, doping concentration range are 1 × 1018-1×1019cm3, doping concentration from close to AlN buffer layer to most surface reduce.
Preferably, the N-shaped varying doping GaN base receiving layer includes 4 layers from close to AlN buffer layer to most surface, first layer
With a thickness of 50-75nm, doping concentration 1 × 1019cm-3；For the second layer with a thickness of 50-75nm, doping concentration is 5 × 1018cm-3；Third
For layer with a thickness of 50-75nm, doping concentration is 2.5 × 1018cm-3；4th layer with a thickness of 50-75nm, doping concentration is 1 ×
1018cm-3。
Preferably, the N-shaped varying doping GaN base is received layer surface and is handled using ultrahigh vacuum activation technology.
Compared with prior art, the present invention N-shaped GaN base material 1) of the invention is had the advantage that, using heavily doped acrobatics
Art makes fermi level against conduction band bottom；2) N-shaped GaN base anode construction of the invention is based on semiconductor material doping techniques and surpasses
High vacuum surface activation technology realizes low electron affinity N-shaped varying doping GaN base anode construction, obtains low work function, high electricity
The GaN base anode construction of sub- transport efficiency, high charge collection efficiency realizes higher solar battery energy conversion efficiency；3)
N-shaped GaN base material preparation process proposed by the present invention is simple, is effectively reduced anode work function number, realize PETE solar battery compared with
High energy conversion efficiency；4) present invention uses varying doping technology, forms built in field inside the anode, improves electronics in sun
Extremely internal transport efficiency, the noise current for inhibiting N-shaped GaN base material.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of N-shaped varying doping GaN base anode.
Fig. 2 is the energy conversion efficiency schematic diagram under different anode material work functions.
Specific embodiment
As shown in Figure 1, it is a kind of based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode solar battery, including
GaAs photocathode, vacuum chamber and anode, the anode use GaN base material, and the anode is from most surface layer to close to vacuum chamber
It is followed successively by substrate layer 1, AlN buffer layer 2, N-shaped varying doping GaN receiving layer 3.
It is connected between GaAs photocathode and GaN anode using cylindrical ceramic chamber, place is sealed by indium closure material
Reason forms a vacuum cavity between GaAs photoelectricity and GaN anode, to constitute a vacuum separation formula p-n junction solar energy
Battery.
The substrate layer 1 is Sapphire Substrate, and AlN buffer layer 2 is grown in the upper of Sapphire Substrate in the way of MOCVD
On surface, with a thickness of 50-75nm.
The N-shaped varying doping GaN base receiving layer 3 is grown on AlN buffer layer 2 in the way of MOCVD, with a thickness of 200-
300nm, doping concentration range are 1 × 1018-1×1019cm3, doping concentration is from close AlN buffer layer 2 to most surface reduction.
In certain embodiments, the N-shaped varying doping GaN base receiving layer 3 includes 4 from close to AlN buffer layer 2 to most surface
Layer, first layer is with a thickness of 50-75nm, doping concentration 1 × 1019cm-3；The second layer with a thickness of 50-75nm, doping concentration is 5 ×
1018cm-3；For third layer with a thickness of 50-75nm, doping concentration is 2.5 × 1018cm-3；4th layer, with a thickness of 50-75nm, is adulterated dense
Degree is 1 × 1018cm-3。
Using ultrahigh vacuum activation technology, activation processing is carried out to 3 surface of N-shaped varying doping GaN receiving layer, obtains low electronics
The N-shaped GaN base receiving layer 3 of affinity.
Due to the difference of the doping concentration of GaN base material, one is formed inside the anode by the built in field in outer direction,
The carrier that the built in field is conducive to improve anode interior transports rate, enhances the charge collection efficiency of anode, inhibits N-shaped
The noise current of GaN base material.
It is handled by surface activation and obtains low electron affinity GaN base anode, work function also declines therewith, solar-electricity
Pond output voltage becomes larger, and improves the energy conversion efficiency of solar battery.
As shown in Fig. 2, a kind of be based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode solar battery, different sun
Energy conversion efficiency schematic diagram under the conditions of the work function of pole, as anode work function number reduces, energy conversion efficiency is higher.This hair
The N-shaped varying doping GaN base anode material of bright proposition obtains the N-shaped GaN of low electron affinity after ultravacuum activation technology
Base receiving layer reduces the work function of anode material, improves the energy conversion efficiency of solar battery.
Embodiment
One kind be based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode solar battery, including GaAs photocathode,
Vacuum chamber and anode, the anode use GaN base material, and the anode is followed successively by substrate layer 1, AlN buffer layer 2, n from outside to inside
Type varying doping GaN receiving layer 3.The substrate layer 1 is Sapphire Substrate, and AlN buffer layer 2 is grown in indigo plant in the way of MOCVD
On the upper surface of jewel substrate, with a thickness of 50nm, it is slow that the N-shaped varying doping GaN receiving layer 3 is grown in AlN in the way of MOCAD
It rushes 2 on layer, with a thickness of 200nm, the N-shaped varying doping GaN base receiving layer 3 includes 4 layers, and first layer adulterates dense with a thickness of 50nm
Degree 1 × 1019cm-3；For the second layer with a thickness of 50nm, doping concentration is 5 × 1018cm-3；Third layer is with a thickness of 50nm, doping concentration
2.5×1018cm-3；4th layer with a thickness of 50nm, doping concentration is 1 × 1018cm-3。
Claims (6)
1. a kind of solar battery based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode, including GaAs photocathode,
Vacuum chamber and anode, which is characterized in that the anode use GaN base material, the anode from most surface layer to close to vacuum chamber according to
Secondary is substrate layer (1), AlN buffer layer (2), N-shaped varying doping GaN receiving layer (3).
2. the solar battery according to claim 1 based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode,
It is characterized in that, the substrate layer (1) is Sapphire Substrate.
3. the solar battery according to claim 1 based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode,
It is characterized in that, the AlN buffer layer (2) is grown on substrate layer (1), with a thickness of 50-75nm.
4. the solar battery according to claim 1 based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode,
It being characterized in that, the N-shaped varying doping GaN base receiving layer (3) is grown on AlN buffer layer (2) in the way of MOCVD, with a thickness of
200-300nm, doping concentration range are 1 × 1018-1×1019cm3, doping concentration subtracts from close to AlN buffer layer (2) to most surface
It is small.
5. the solar battery according to claim 4 based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode,
It is characterized in that, the N-shaped varying doping GaN base receiving layer (3) includes 4 layers from close to AlN buffer layer (2) to most surface, first layer
With a thickness of 50-75nm, doping concentration 1 × 1019cm-3；For the second layer with a thickness of 50-75nm, doping concentration is 5 × 1019cm-3；Third
For layer with a thickness of 50-75nm, doping concentration is 2.5 × 1018cm-3；4th layer with a thickness of 50-75nm, doping concentration is 1 ×
1018cm-3。
6. the solar battery according to claim 1 based on vacuum separation formula p-n junction N-shaped varying doping GaN base anode,
It is characterized in that, the N-shaped varying doping GaN base receiving layer (3) surface is handled using ultrahigh vacuum activation technology.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910568118.7A CN110379866B (en) | 2019-06-27 | 2019-06-27 | Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode |
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| CN201910568118.7A CN110379866B (en) | 2019-06-27 | 2019-06-27 | Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182307A1 (en) * | 1999-02-18 | 2002-12-05 | City University Of Hong Kong | Organic electroluminescent devices with organic layers deposited at elevated substrate temperatures |
| CN101866976A (en) * | 2010-05-21 | 2010-10-20 | 重庆大学 | Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method |
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| CN107507873A (en) * | 2017-08-04 | 2017-12-22 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
| CN108630510A (en) * | 2018-05-21 | 2018-10-09 | 南京理工大学 | Varying doping GaN nano wire array photoelectric cathode and preparation method thereof |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
-
2019
- 2019-06-27 CN CN201910568118.7A patent/CN110379866B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182307A1 (en) * | 1999-02-18 | 2002-12-05 | City University Of Hong Kong | Organic electroluminescent devices with organic layers deposited at elevated substrate temperatures |
| CN101866976A (en) * | 2010-05-21 | 2010-10-20 | 重庆大学 | Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method |
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| CN107507873A (en) * | 2017-08-04 | 2017-12-22 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
| CN108630510A (en) * | 2018-05-21 | 2018-10-09 | 南京理工大学 | Varying doping GaN nano wire array photoelectric cathode and preparation method thereof |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
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