CN110379800A - 一种陶瓷贴片封装双向低结电容tvs二极管 - Google Patents

一种陶瓷贴片封装双向低结电容tvs二极管 Download PDF

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Publication number
CN110379800A
CN110379800A CN201910704596.6A CN201910704596A CN110379800A CN 110379800 A CN110379800 A CN 110379800A CN 201910704596 A CN201910704596 A CN 201910704596A CN 110379800 A CN110379800 A CN 110379800A
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way
junction capacity
low junction
tvs
tube core
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李大强
石仙宏
柯栋栋
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China Zhenhua Group Yongguang Electronics Coltd
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China Zhenhua Group Yongguang Electronics Coltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

本发明提供了一种陶瓷贴片封装双向低结电容TVS二极管，包括双向TVS管芯；所述双向TVS管芯的一连接端接有两路并联支路，两路支路均接入有低结电容管芯，且两路支路上的低结电容管芯方向相反。本发明通过串联、并联及共极的方式将两组双向低电容TVS管集成在一起，以前需用2只产品的空间，现在只需1只的空间，为线路设计节约了很大的安装空间，实现产品的集成化、小形化。

Description

一种陶瓷贴片封装双向低结电容TVS二极管
技术领域
本发明涉及一种陶瓷贴片封装双向低结电容TVS二极管。
背景技术
由于TVS管在电路中的用量较大，少则几只，多的达几十甚至上百只，如此多的用量势必占据电路版大量的空间，不利于产品的集成化、小形化。
发明内容
为解决上述技术问题，本发明提供了一种陶瓷贴片封装双向低结电容TVS二极管，该陶瓷贴片封装双向低结电容TVS二极管通过串联、并联及共极的方式将两组双向低电容TVS管集成在一起，为线路设计节约了很大的安装空间，实现产品的集成化、小形化.
本发明通过以下技术方案得以实现。
本发明提供的一种陶瓷贴片封装双向低结电容TVS二极管，包括双向TVS管芯；所述双向TVS管芯的一连接端接有两路并联支路，两路支路均接入有低结电容管芯，且两路支路上的低结电容管芯方向相反。
所述两路支路上，低结电容管芯的数量相同。
在所述两路支路中任一支路上的低结电容管芯方向均同向。
所述双向TVS管芯及低结电容管芯为金属陶瓷贴片封装。
所述两路支路上，低结电容管芯的电参数相同。
所述两路支路的接口端与低结电容管芯之间有电路连接。
所述双向TVS管芯的电容量为50pF。
所述双向TVS管芯的最小击穿电压VBR≥1200V。
本发明的有益效果在于：通过串联、并联及共极的方式将两组双向低电容TVS管集成在一起，以前需用2只产品的空间，现在只需1只的空间，为线路设计节约了很大的安装空间，实现产品的集成化、小形化。
附图说明
图1是本发明的连接示意图；
图2是本发明的封装示意图。
具体实施方式
下面进一步描述本发明的技术方案，但要求保护的范围并不局限于所述。
如图1、图2所示的一种陶瓷贴片封装双向低结电容TVS二极管，包括双向TVS管芯；所述双向TVS管芯的一连接端接有两路并联支路，两路支路均接入有低结电容管芯，且两路支路上的低结电容管芯方向相反。
所述两路支路上，低结电容管芯的数量相同。
在所述两路支路中任一支路上的低结电容管芯方向均同向。
所述双向TVS管芯及低结电容管芯为金属陶瓷贴片封装。
所述两路支路上，低结电容管芯的电参数相同。
所述两路支路的接口端与低结电容管芯之间有电路连接。
所述双向TVS管芯的电容量为50pF。
所述双向TVS管芯的最小击穿电压VBR≥1200V。
本发明涉及产品的脉冲功率3000W及以下(脉冲波形为10/1000μs)、结电容最低至50pF双向TVS二极管，防静电等级达30KV，可承受的脉冲电流达200A(脉冲波形为10/1000μs)，采用陶瓷贴片封装形式，可实现双向保护电路的功能。
本发明由一颗双向TVS管芯分别与两组方向相反的低结电容管芯连接(VBR≥1200V)，电原理图如图1所示。电容的的计算方式为电容与芯片面积成正比，与电极板间距成反比(该处特指芯片PN结耗尽层宽度)，为了降低器件电容，芯片选择原则是：在保证脉冲功率的前提下，耗尽层宽度尽量大(即VBR大)，芯片的面积尽量小，根据大量的实践经验总结了脉冲功率与芯片尺寸的对应关系，如表1所示：
表1脉冲功率与芯片尺寸的对应关系表
本发明采用金属陶瓷贴片外形封装，内部组装如图2所示，产品中两组整流管按相反方向并联组装，然后分别连接TVS管，形成双向保护回路。根据电容串联计算公式为了降低产品电容，在电参数规定范围内、封装允许的情况，可适当增加整流管芯片数量。
本发明主要用于保护线路中精密元器件，由于产品的电容值较低，信号的衰减得到很好的控制，从而有效地保护传输信号的真实性。如数字I/O口静电保护、100M以太网防雷保护、通信接口防雷保护等。

Claims (8)

1.一种陶瓷贴片封装双向低结电容TVS二极管，包括双向TVS管芯，其特征在于：所述双向TVS管芯的一连接端接有两路并联支路，两路支路均接入有低结电容管芯，且两路支路上的低结电容管芯方向相反。
2.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述两路支路上，低结电容管芯的数量相同。
3.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：在所述两路支路中任一支路上的低结电容管芯方向均同向。
4.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述双向TVS管芯及低结电容管芯为金属陶瓷贴片封装。
5.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述两路支路上，低结电容管芯的电参数相同。
6.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述两路支路的接口端与低结电容管芯之间有电路连接。
7.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述双向TVS管芯的电容量为50pF。
8.如权利要求1所述的陶瓷贴片封装双向低结电容TVS二极管，其特征在于：所述双向TVS管芯的最小击穿电压VBR≥1200V。
CN201910704596.6A 2019-07-31 2019-07-31 一种陶瓷贴片封装双向低结电容tvs二极管 Pending CN110379800A (zh)

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Citations (8)

* Cited by examiner, † Cited by third party
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US20050189619A1 (en) * 2004-02-27 2005-09-01 Walters Cecil K. PIN or NIP low capacitance transient voltage suppressors and steering diodes
CN201898328U (zh) * 2010-11-30 2011-07-13 百圳君耀电子（深圳）有限公司 一种半导体浪涌保护器件
CN102709333A (zh) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 低电容玻璃实体封装硅瞬态电压抑制二极管及其制造方法
CN203119463U (zh) * 2012-12-28 2013-08-07 李怀东 一种低电容大浪涌保护电路
CN105186478A (zh) * 2015-08-20 2015-12-23 北京燕东微电子有限公司 瞬态电压抑制器
US20160240510A1 (en) * 2015-02-17 2016-08-18 Sfi Electronics Technology Inc. Multi-function miniaturized surface-mount device and process for producing the same
CN208111441U (zh) * 2017-12-29 2018-11-16 杭州士兰集成电路有限公司 双向低电容tvs器件
CN210142650U (zh) * 2019-07-31 2020-03-13 中国振华集团永光电子有限公司（国营第八七三厂） 一种陶瓷贴片封装双向低结电容tvs二极管

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189619A1 (en) * 2004-02-27 2005-09-01 Walters Cecil K. PIN or NIP low capacitance transient voltage suppressors and steering diodes
CN201898328U (zh) * 2010-11-30 2011-07-13 百圳君耀电子（深圳）有限公司 一种半导体浪涌保护器件
CN102709333A (zh) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 低电容玻璃实体封装硅瞬态电压抑制二极管及其制造方法
CN203119463U (zh) * 2012-12-28 2013-08-07 李怀东 一种低电容大浪涌保护电路
US20160240510A1 (en) * 2015-02-17 2016-08-18 Sfi Electronics Technology Inc. Multi-function miniaturized surface-mount device and process for producing the same
CN105186478A (zh) * 2015-08-20 2015-12-23 北京燕东微电子有限公司 瞬态电压抑制器
CN208111441U (zh) * 2017-12-29 2018-11-16 杭州士兰集成电路有限公司 双向低电容tvs器件
CN210142650U (zh) * 2019-07-31 2020-03-13 中国振华集团永光电子有限公司（国营第八七三厂） 一种陶瓷贴片封装双向低结电容tvs二极管

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