CN110355613B - Fenton reaction and Lorentz force collaborative polishing method for silicon carbide plane - Google Patents
Fenton reaction and Lorentz force collaborative polishing method for silicon carbide plane Download PDFInfo
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- CN110355613B CN110355613B CN201910443699.1A CN201910443699A CN110355613B CN 110355613 B CN110355613 B CN 110355613B CN 201910443699 A CN201910443699 A CN 201910443699A CN 110355613 B CN110355613 B CN 110355613B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
Abstract
A Fenton reaction and Lorentz force collaborative polishing method of a silicon carbide plane is disclosed, wherein the silicon carbide plane polishing is realized by low-pressure abrasive flow; the inclination angle of the top surface of the flow channel of the low-pressure abrasive flow is adjustable and is realized by replacing an angle block part arranged in the processing device; the Fenton reaction is to pretreat the surface of the silicon carbide workpiece, and a silicon dioxide thin layer is generated on the surface of the silicon carbide workpiece through the Fenton reaction before polishing, so that the surface hardness of the workpiece is reduced; lorentz force is acting force of the magnetic field on the charged abrasive particles; the magnetic field is a uniform magnetic field with adjustable intensity, which is generated by an electromagnet arranged behind the processing device and is parallel to the surface of the workpiece and vertical to the flowing direction of the abrasive particle flow, and under the action of the magnetic field, positively charged abrasive particles moving in the flow field are acted by Lorentz force vertically pointing to the surface of the workpiece and move towards the surface of the workpiece; the positively charged abrasive particles are alumina abrasive particles with a positively charged surface. The polished workpiece has uniform surface roughness, high surface quality and high processing efficiency.
Description
Technical Field
The invention belongs to the field of ultra-precision machining, and relates to a Fenton reaction and Lorentz force collaborative polishing method for a silicon carbide plane.
Background
The silicon carbide is used as a third-generation semiconductor material, has the characteristics of large forbidden band width, high critical breakdown field strength, high electron mobility, high thermal conductivity and the like, and is widely applied to the fields of abrasive materials, metallurgy, LED solid illumination, precise electronic components and the like. Among them, the fields of precision electronic components and the like have surface quality requirements such as small surface damage, low surface roughness, uniform distribution and the like on silicon carbide wafers, but the characteristics of high hardness, high brittleness and the like of silicon carbide make surface polishing of the silicon carbide wafers very difficult.
The traditional silicon carbide surface polishing process, such as grinding, is to polish the surface of a workpiece through free abrasive particles on a grinding disc, and because the distribution of the free abrasive particles on the grinding disc has great unevenness, the surface roughness of the workpiece at each position after grinding is easy to be unequal, the surface damage is easy to be caused, and the performance of the workpiece is seriously influenced. Although the grinding method of relatively fixing the abrasive particles on the grinding disc can keep the abrasive particles uniformly distributed, the abrasive particles close to the edge of the grinding disc have a wear degree far greater than that of the abrasive particles close to the rotation center due to different distances between the abrasive particles and the rotation center of the grinding disc and unequal rotation speeds of abrasive particle lines at different positions in the grinding process, so that the polishing degree of the surface of a workpiece is different, and the quality of the processed surface is reduced. In the prior advanced magnetic grinding process, the magnetic abrasive particles have obvious centrifugal effect when rotating at high speed along with a magnetic field, and the abrasive particles at the edge are separated from the magnetic field to restrict and scatter outwards, so that the problem of uneven distribution of polishing force in a processing area can be finally caused.
Compared with the silicon carbide polishing process, the low-pressure abrasive flow polishing is a novel silicon carbide surface polishing technology, fluid is used as a carrier of abrasive particles, and polishing treatment is carried out through the flow of the abrasive particles relative to the surface of a silicon carbide workpiece. The benefits of low pressure abrasive flow polishing are realized in the aspects of lower surface roughness, more uniform surface quality, and less surface damage rate of the polished silicon carbide workpiece.
Despite the many incomparable advantages of low pressure abrasive flow polishing, there are still some problems in low pressure abrasive flow polishing, which are embodied in the following three aspects: (1) in the machining process, energy loss is caused by friction between fluid and the surface of a workpiece and collision between abrasive particles and the surface of the workpiece, pressure of the fluid in a machining area is reduced in the flowing direction, the polishing force on the surface of the workpiece is unevenly distributed, and finally the roughness value of the surface of the workpiece after polishing is unevenly distributed, so that the surface quality is reduced. (2) Because the hardness of the silicon carbide workpiece is very high, the common abrasive particles are difficult to process the silicon carbide workpiece, and a long time is needed for achieving an ideal processing effect. (3) The material ablation rate of low-pressure abrasive flow polishing is low, and the shearing force of abrasive particles to the wave crests on the surface of the workpiece is small due to insufficient pressure of the abrasive particles to the surface of the workpiece. The abrasive particles are distributed randomly in the cross section perpendicular to the flowing direction of the fluid, only a small part of the abrasive particles near the surface of the workpiece can play a role in actual polishing, most of the abrasive particles only flow through the processing cavity along with the fluid, and do not participate in polishing, so that the utilization rate of the abrasive particles is low.
Disclosure of Invention
In order to solve the problems of uneven surface roughness, low surface quality and low processing efficiency of a polished workpiece in the low-pressure abrasive flow polishing of a silicon carbide plane, the invention provides a Fenton reaction and Lorentz force collaborative polishing method for the silicon carbide plane, wherein the polished workpiece has even surface roughness, high surface quality and high processing efficiency.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a Fenton reaction and Lorentz force collaborative polishing method of a silicon carbide plane is disclosed, wherein the silicon carbide plane polishing is realized by low-pressure abrasive flow; the inclination angle of the top surface of the flow channel of the low-pressure abrasive particle flow is adjustable and is realized by replacing an angle block part arranged in the processing device; the Fenton reaction is used for pretreating the surface of the silicon carbide workpiece, and a silicon dioxide thin layer is generated on the surface of the silicon carbide workpiece through the Fenton reaction before polishing, so that the surface hardness of the workpiece is reduced; the Lorentz force is an acting force of a magnetic field on the charged abrasive particles; the magnetic field is a uniform magnetic field with adjustable intensity, which is generated by an electromagnet arranged behind the processing device and is parallel to the surface of the workpiece and vertical to the flowing direction of the abrasive particle flow, and under the action of the magnetic field, positively charged abrasive particles moving in the flow field are acted by Lorentz force vertically pointing to the surface of the workpiece and move towards the surface of the workpiece; the positively charged abrasive particles are alumina abrasive particles with positively charged surfaces.
Furthermore, the system for realizing the method comprises a low-pressure abrasive flow loop consisting of a pressure gauge, a processing device, an abrasive cylinder, a pump and a control valve, an electromagnet arranged at the rear part of the processing device, a stirrer and a water cooling device arranged in the abrasive cylinder and a system controller; the polishing method comprises the following steps: under the action of the stirrer and the water cooling device, uniform and constant-temperature abrasive flow is sucked out of the abrasive cylinder through the pump and sent into the pipeline, flows into the processing device provided with the electromagnet after passing through the control valve and the pressure gauge, and then flows back to the abrasive cylinder through the pipeline, and the whole processing process is automatically controlled through the system controller.
Further, the pressure of the low-pressure abrasive flow is 0.05-2 MPa. Compared with a high-pressure abrasive particle flow, the abrasive particle flow speed in the low-pressure abrasive particle flow is low, the shearing force on the surface of a workpiece is small, the material removal amount is small, and the controllability is good.
Furthermore, the inclination angle of the top surface of the flow channel can be adjusted by replacing an angle block part in the processing device, and low-pressure abrasive particle flow enters from the left side and flows out from the right side during processing. In the machining process, energy loss can be caused by friction collision between fluid and abrasive particles and a cavity of a machining device or the surface of a workpiece, pressure in a flow field in the flowing direction is reduced, and then shearing force of the abrasive particles on the surface of the workpiece is reduced; the angle block parts with the inclination angles uniformly increased from 0 to 10 degrees can uniformly change the inclination angles of the upper top surface of the processing flow channel within the range of 0 to 10 degrees, so that the processing flow channel is changed into a wedge-shaped space, the sectional area of the flow channel is gradually reduced along the flow direction of abrasive particles, the pressure reduction in the flow field along the flow direction is compensated, the shearing force reduction on the surface of a workpiece along the flow direction is compensated, the polishing force on the surface of the workpiece is uniformly distributed, and the roughness of the surface of the workpiece after polishing is uniformly distributed.
The Fenton reaction is used for pretreating the surface of the silicon carbide workpiece, and a silicon dioxide thin layer is generated on the surface of the silicon carbide workpiece through the Fenton reaction before polishing, so that the surface hardness of the workpiece is reduced; firstly, placing a silicon carbide workpiece in a workpiece sleeve made of PMMA (polymethyl methacrylate) material, exposing a thin layer to be polished, and then placing the thin layer into a Fenton reaction reagent; the Fenton reaction reagent is prepared from a hydrogen peroxide solution with the mass fraction of 10% and nano ferroferric oxide powder serving as a reaction catalyst, the mass fraction of the nano ferroferric oxide powder in the Fenton reaction reagent is 1.5%, divalent iron ions are ionized in the solution by the nano ferroferric oxide, hydrogen peroxide is decomposed to generate hydroxyl free radicals with strong oxidizing property under the catalytic action of the divalent iron ions, and a silicon carbide thin layer exposed in the Fenton reaction reagent is oxidized to generate a silicon dioxide thin layer. The hardness of the silicon dioxide is lower than that of silicon carbide, which is beneficial to subsequent abrasive flow polishing, reduces the surface roughness of the polished workpiece and improves the processing efficiency. The part of the silicon carbide workpiece wrapped by the PMMA workpiece sleeve does not participate in the reaction and is not influenced.
The magnetic field is a uniform magnetic field which is applied to the surface of a workpiece in the wedge-shaped flow channel and is parallel to the flow direction of abrasive particle flow, the uniform magnetic field is generated by an electromagnet arranged behind the processing device, the magnetic field intensity is adjustable within a range of 0.01-1.00T, the magnetic field intensity is adjusted by a system controller, and the adjustment of the magnetic field intensity is realized by changing the current in an electromagnet coil.
Furthermore, the positively charged abrasive particles are subjected to Lorentz force when moving, a uniform magnetic field which is parallel to the surface of the workpiece and vertical to the flow direction of the abrasive particle flow is arranged in the wedge-shaped flow channel, the magnetic field intensity is B, and the direction of the magnetic field is vertical to the paper surface and faces inwards; when moving in the magnetic field, the positively charged abrasive particles are subjected to a lorentz force F directed perpendicularly to the workpiece surface, and flow in a direction perpendicularly directed to the workpiece surface while flowing in parallel to the workpiece surface to the right. The Lorentz force vertically pointing to the surface of the workpiece can not only increase the pressure of the abrasive particles on the surface of the workpiece, but also lead the abrasive particles which are originally distributed in the cross section of the flow channel in an unordered way to be gathered on the surface of the workpiece, and prolong the residence time of the abrasive particles on the surface of the workpiece, thereby improving the processing efficiency.
The positively charged abrasive particles are alumina abrasive particles with positive charges on the surfaces, the particle size is 0.2-2 mu m, the mass fraction of the alumina abrasive particles in the abrasive particle flow is 2-15%, and the positive charges on the surfaces of the alumina abrasive particles are realized in a PH environment.
The PH environment refers to an acidic environment where the flow of abrasive particles has a PH of 4, and the surface of the alumina abrasive particles is positively charged in the acidic environment where the flow of abrasive particles has a PH of 4.
The heat generated by the pump and the throttling of the control valve can cause the temperature of abrasive flow in a processing loop to rise, and the temperature rise of the abrasive flow can cause the viscosity of the abrasive flow to change, so that the polishing force of the surface of a workpiece changes, and finally the polishing quality is reduced. In order to avoid the adverse effect caused by the temperature rise of the abrasive particle flow, a water cooling device is installed in the abrasive particle cylinder, and the cooling water flow of the water cooling device is adjusted through a system controller so as to maintain the temperature of the abrasive particle flow within the range of 15-45 ℃.
The invention has the following beneficial effects: the angle is adjustable to compensate the pressure drop in the flow field along the flow direction caused by the energy loss caused by the friction collision between the fluid and the abrasive particles and the cavity of the processing device or the surface of the workpiece in the processing process, so that the polishing force on the surface of the workpiece is uniformly distributed, the roughness of the surface of each part of the workpiece is consistent after polishing, and the surface quality is improved. The surface hardness of the silicon carbide workpiece is reduced through the Fenton reaction, the surface roughness of the polished workpiece is reduced, and the processing efficiency is improved. Meanwhile, the pressure of abrasive particles on the surface of the workpiece is increased by the aid of Lorentz force for polishing, the abrasive particles which are originally distributed in the cross section of the flow channel in a disordered mode are gathered on the surface of the workpiece, the abrasive particle concentration near the surface of the workpiece is improved, the abrasive particles are fully utilized, and the machining efficiency is further improved.
Drawings
FIG. 1 is a schematic view of a processing system.
Fig. 2 is a schematic view of a processing apparatus.
Fig. 3 is a sectional view of the processing apparatus.
Fig. 4 is an exploded view of the processing apparatus.
FIG. 5 is an exemplary view of an angle block component.
FIG. 6 is a schematic diagram of the Fenton reaction.
Fig. 7 is a schematic view of the magnetic field.
Fig. 8 is a graph illustrating the lorentz force exerted on a positively charged abrasive particle as it moves.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1 to 8, a method for polishing a silicon carbide plane by synergy of fenton reaction and lorentz force, wherein the silicon carbide plane is polished by low-pressure abrasive flow; the inclination angle of the top surface of the flow channel of the low-pressure abrasive particle flow is adjustable and is realized by replacing an angle block part arranged in the processing device; the Fenton reaction is used for pretreating the surface of the silicon carbide workpiece, and a silicon dioxide thin layer is generated on the surface of the silicon carbide workpiece through the Fenton reaction before polishing, so that the surface hardness of the workpiece is reduced; the Lorentz force is an acting force of a magnetic field on the charged abrasive particles; the magnetic field is a uniform magnetic field with adjustable intensity, which is generated by an electromagnet arranged behind the processing device and is parallel to the surface of the workpiece and vertical to the flowing direction of the abrasive particle flow, and under the action of the magnetic field, positively charged abrasive particles moving in the flow field are acted by Lorentz force vertically pointing to the surface of the workpiece and move towards the surface of the workpiece; the positively charged abrasive particles are alumina abrasive particles with positively charged surfaces.
The system for implementing the method is shown in fig. 1, and comprises: the system comprises a low-pressure abrasive flow loop consisting of a pressure gauge 1, a processing device 2, an abrasive grain cylinder 6, a pump 8 and a control valve 9, an electromagnet 3 arranged behind the processing device 2, a stirrer 4 and a water cooling device 5 arranged in the abrasive grain cylinder 6, and a system controller 7. The whole processing system is automatically controlled by a system controller 7.
The processing process is as follows: after the surface of the silicon carbide workpiece is subjected to Fenton reaction pretreatment, a processing system is started, the electromagnet 3 is electrified to generate a uniform magnetic field vertical to the surface of the workpiece, and the magnetic field intensity can be adjusted within the range of 0.01-1.00T through the system controller 7. The stirrer 4 is started to uniformly stir the magnetic particles and the composite abrasive particles in the abrasive particle cylinder. The pump 8 is started, the control valve 9 is opened, abrasive flow is sent into the machining device 2, and low pressure of 0.05-2 MPa is provided for the angle-adjustable wedge-shaped flow channel space of the machining device 2 for polishing. The water cooling device 5 is started, and the system controller 7 measures the temperature in the abrasive grain cylinder by a thermometer installed in the abrasive grain cylinder and controls the flow rate of the cooling water of the water cooling device 5, thereby maintaining the temperature of the abrasive grain flow within an allowable range.
The processing device 2 is shown in fig. 2, the internal structure thereof is shown in fig. 3, and the component composition thereof is shown in fig. 4. The processing device comprises an end cover 201, a screw 202, a sealing ring 203, an inlet flow guide piece 204, an angle block part 205, a cavity 206, a workpiece groove 207, a workpiece disc 208 and an outlet flow guide piece 209.
The adjustment of the inclination angle of the top surface of the runner is realized by replacing the angle block part 205 of the processing device 2. Angle block components as shown in fig. 5, the angle of inclination of the example angle block 205a is 0 degrees and the angle of inclination of the example angle block 205b is 10 degrees. The angle block slides into the cavity in a sliding block mode, and the horizontal displacement of the angle block is limited by the flow guide pieces on the two sides and the end covers. The angle block parts with the inclination angles uniformly increased from 0 to 10 degrees can enable the included angle of the wedge-shaped runner to be uniformly adjusted within the range of 0 to 10 degrees, so that the sectional area of the wedge-shaped runner is reduced in different degrees along the flow direction, the pressure loss in the flow direction in the runner is compensated, and the shearing force on the surface of a workpiece is uniformly distributed.
And preparing a Fenton reaction reagent. Firstly preparing hydrogen peroxide solution with the mass fraction of 10%, and then adding nano ferroferric oxide powder serving as a catalyst, wherein the mass fraction of the catalyst is 1.5%.
The surface of the silicon carbide workpiece is subjected to fenton reaction pretreatment, as shown in fig. 6, the silicon carbide workpiece 101 is placed in a workpiece sleeve 102 made of PMMA material, only a thin layer to be polished is exposed, and then the silicon carbide workpiece is placed in a container 104 of a fenton reaction reagent 103. The nano ferroferric oxide ionizes ferrous ions in the solution, hydrogen peroxide is decomposed to generate hydroxyl radicals with strong oxidizing property under the catalytic action of the ferrous ions, the silicon carbide thin layer exposed in the Fenton reaction reagent is oxidized to generate a silicon dioxide thin layer, and the part wrapped by the PMMA workpiece sleeve is not affected. The hardness of the silicon dioxide thin layer generated on the surface of the silicon carbide workpiece is relatively low, so that the subsequent abrasive flow polishing is facilitated, the surface roughness of the polished workpiece is reduced, and the processing efficiency is improved.
The inlet guide piece 204 and the outlet guide piece 209 in the processing device 2 are used for guiding the flow of the inlet and the outlet of the runner respectively, so that the sectional areas of the inlet and the outlet of the runner are changed smoothly, the local resistance coefficient is reduced, and the energy loss of the abrasive flow is reduced. The flow guide piece is connected with the cavity through a pin.
The workpiece 210 subjected to the fenton reaction pretreatment is placed on the workpiece tray 208, and the workpiece tray is placed in the workpiece tank 207. Adopt detachable work piece dish, when processing the work piece of different shapes, only need according to work piece shape preparation corresponding work piece dish and change can, need not change the work piece groove, compare in integral work piece dish, detachable work piece dish material is still less, and processing is easier.
The workpiece groove slides into the groove at the bottom of the cavity in a sliding block mode, and the horizontal displacement of the workpiece groove is limited by the flow guide parts at the two sides and the end covers.
The sealing of the whole processing device is realized by two sealing rings. Two sealing rings are used for sealing the groove between the end cover and the cavity body, and prevent the abrasive particles from leaking out of the processing device.
And covering end covers at two sides of the processing device, and screwing down screws. The processing device is connected with the hose through the sealing pipe threads on the two sides and is connected into the abrasive flow polishing loop.
Preparing an abrasive particle flow, adding 5% dilute sulfuric acid into deionized water to enable the abrasive particle flow to be in an acidic state with pH 4, then adding alumina abrasive particles with the particle size of 0.2-2 mu m, controlling the mass fraction of the alumina abrasive particles in the abrasive particle flow to be 2-15%, and enabling the surfaces of the alumina abrasive particles to be positively charged in an acidic environment with pH 4.
Adding the prepared abrasive flow into an abrasive cylinder, and starting a stirrer to make the abrasive flow uniform. And opening the pump and the control valve through the system controller to perform low-pressure abrasive flow polishing processing.
By setting the magnetic field strength by the system controller, the electromagnet 3 placed behind the machining device 2 applies a uniform magnetic field parallel to the workpiece surface and perpendicular to the flow direction of the abrasive flow in the wedge-shaped flow channel, as shown in fig. 7. The alumina abrasive grains 211, the surfaces of which are positively charged, are subjected to a lorentz force F directed perpendicularly to the surface of the workpiece 210 when moving in the magnetic field, and flow in a direction directed perpendicularly to the surface of the workpiece while flowing parallel to the surface of the workpiece to the right as shown in fig. 8. The Lorentz force vertically pointing to the surface of the workpiece can not only increase the pressure of the abrasive particles on the surface of the workpiece, but also lead the abrasive particles which are originally distributed in the cross section of the flow channel in an unordered way to be gathered on the surface of the workpiece, and prolong the residence time of the abrasive particles on the surface of the workpiece, thereby improving the processing efficiency.
The system controller reads the temperature of the abrasive flow through a thermometer arranged in the abrasive cylinder, and according to the change of the temperature of the abrasive flow, the water cooling device is started and the flow of cooling water is adjusted, so that the temperature of the abrasive flow is controlled within the range of 15-45 ℃.
Claims (7)
1. A Fenton reaction and Lorentz force collaborative polishing method of a silicon carbide plane is characterized in that the silicon carbide plane is polished by low-pressure abrasive flow; the inclination angle of the top surface of the flow channel of the low-pressure abrasive particle flow is adjustable and is realized by replacing an angle block part arranged in the processing device; the Fenton reaction is used for pretreating the surface of the silicon carbide workpiece, and a silicon dioxide thin layer is generated on the surface of the silicon carbide workpiece through the Fenton reaction before polishing, so that the surface hardness of the workpiece is reduced; the Lorentz force is an acting force of a magnetic field on the charged abrasive particles; the magnetic field is a uniform magnetic field with adjustable intensity, which is generated by an electromagnet arranged behind the processing device and is parallel to the surface of the workpiece and vertical to the flowing direction of the abrasive particle flow, and under the action of the magnetic field, positively charged abrasive particles moving in the flow field are acted by Lorentz force vertically pointing to the surface of the workpiece and move towards the surface of the workpiece; the positively charged abrasive particles are alumina abrasive particles with positively charged surfaces;
the pressure of the low-pressure abrasive flow is 0.05-2 MPa, the inclination angle of the top surface of the flow channel can be adjusted by replacing an angle block part in the machining device, and the low-pressure abrasive flow enters from the left side and flows out from the right side of the machining device during machining; in the machining process, energy loss can be caused by friction collision between fluid and abrasive particles and a cavity of a machining device or the surface of a workpiece, pressure in a flow field in the flowing direction is reduced, and then shearing force of the abrasive particles on the surface of the workpiece is reduced; the group of angle block parts with the inclination angles uniformly increased from 0 to 10 degrees can uniformly change the inclination angle of the upper top surface of the processing flow channel within the range of 0 to 10 degrees, so that the processing flow channel is changed into a wedge-shaped space, and the sectional area of the flow channel is gradually reduced along the flow direction of abrasive particles;
the positively charged abrasive particles are alumina abrasive particles with positive charges on the surfaces, the particle size is 0.2-2 mu m, the mass fraction of the alumina abrasive particles in the abrasive particle flow is 2-15%, and the positive charges on the surfaces of the alumina abrasive particles are realized in a PH environment.
2. The method of cooperative polishing of Fenton's reaction and Lorentz's force on silicon carbide plane according to claim 1, wherein the system for implementing the method comprises a low pressure abrasive flow loop consisting of a pressure gauge, a processing device, an abrasive grain cylinder, a pump, a control valve, an electromagnet disposed behind the processing device, a stirrer and a water cooling device disposed in the abrasive grain cylinder, and a system controller; the polishing method comprises the following steps: under the action of the stirrer and the water cooling device, uniform and constant-temperature abrasive flow is sucked out of the abrasive cylinder through the pump and sent into the pipeline, flows into the processing device provided with the electromagnet after passing through the control valve and the pressure gauge, and then flows back to the abrasive cylinder through the pipeline, and the whole processing process is automatically controlled through the system controller.
3. The method of cooperative polishing with a Fenton reaction and a Lorentz force in a silicon carbide plane according to claim 1 or 2, wherein the Fenton reaction is a surface pretreatment of the silicon carbide workpiece, and a thin layer of silicon dioxide is formed on the surface of the silicon carbide workpiece by the Fenton reaction before polishing to reduce the hardness of the surface of the workpiece; firstly, placing a silicon carbide workpiece in a workpiece sleeve made of PMMA (polymethyl methacrylate) material, exposing a thin layer to be polished, and then placing the thin layer into a Fenton reaction reagent; the Fenton reaction reagent is prepared from a hydrogen peroxide solution with the mass fraction of 10% and nano ferroferric oxide powder serving as a reaction catalyst, the mass fraction of the nano ferroferric oxide powder in the Fenton reaction reagent is 1.5%, divalent iron ions are ionized in the solution by the nano ferroferric oxide, hydrogen peroxide is decomposed to generate hydroxyl free radicals with strong oxidizing property under the catalytic action of the divalent iron ions, and a silicon carbide thin layer exposed in the Fenton reaction reagent is oxidized to generate a silicon dioxide thin layer.
4. The method for polishing silicon carbide in a planar manner by cooperation of the Fenton reaction and the Lorentz force according to claim 1 or 2, wherein the magnetic field is a uniform magnetic field which is applied to the surface of the workpiece in the wedge-shaped flow channel and is perpendicular to the flow direction of the abrasive flow, the uniform magnetic field is generated by an electromagnet which is arranged behind the processing device, the magnetic field intensity is adjustable within a range of 0.01-1.00T, the magnetic field intensity is adjusted by a system controller, and the adjustment of the magnetic field intensity is realized by changing the current in an electromagnet coil.
5. The method of claim 1 or 2, wherein the positively charged abrasive particles are subjected to lorentz force during movement, a uniform magnetic field is present in the wedge-shaped flow channel, the uniform magnetic field is parallel to the surface of the workpiece and perpendicular to the flow direction of the abrasive particle flow, and the magnetic field strength is B; when moving in a magnetic field, the positively charged abrasive particles are acted by a Lorentz force F vertically pointing to the surface of the workpiece, flow to the right parallel to the surface of the workpiece and simultaneously flow along the direction vertically pointing to the surface of the workpiece; the Lorentz force vertically pointing to the surface of the workpiece can not only increase the pressure of the abrasive particles on the surface of the workpiece, but also lead the abrasive particles which are originally distributed in the cross section of the flow channel in an unordered way to be gathered on the surface of the workpiece, and prolong the residence time of the abrasive particles on the surface of the workpiece.
6. The method of claim 1, wherein the PH environment is an acidic environment with PH 4, and the surface of the alumina abrasive grain is positively charged in the acidic environment with PH 4.
7. The method of cooperative polishing of Fenton's reaction and Lorentz's force in silicon carbide plane according to claim 1 or 2, wherein a water cooling device is installed in the abrasive grain cylinder, and the flow rate of cooling water of the water cooling device is adjusted by a system controller to maintain the temperature of the abrasive grain flow within the range of 15 to 45 ℃.
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