CN110355613A - The Fenton's reaction and Lorentz force of silicon carbide plane cooperate with polishing method - Google Patents
The Fenton's reaction and Lorentz force of silicon carbide plane cooperate with polishing method Download PDFInfo
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- CN110355613A CN110355613A CN201910443699.1A CN201910443699A CN110355613A CN 110355613 A CN110355613 A CN 110355613A CN 201910443699 A CN201910443699 A CN 201910443699A CN 110355613 A CN110355613 A CN 110355613A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The Fenton's reaction and Lorentz force of a kind of silicon carbide plane cooperate with polishing method, and silicon carbide plane polishing is realized by low pressure abrasive Flow；The runner top surface inclination adjustable angle of low pressure abrasive Flow is realized by replacing the angle block gauge part being placed in processing unit (plant)；Fenton's reaction is the surface preparation to silicon carbide workpiece, so that silicon carbide workpiece surface is generated thin layer of silicon dioxide by Fenton's reaction before polishing, reduces workpiece surface hardness；Lorentz force is active force of the magnetic field to electrification abrasive grain；Magnetic field is to be placed in caused by the electromagnet at processing unit (plant) rear to be parallel to workpiece surface and perpendicular to the adjustable uniform magnetic field of the intensity of abrasive Flow flow direction, under the action of the magnetic field, the positively charged abrasive grain of flow is acted on by the Lorentz force for being perpendicularly oriented to workpiece surface, is moved to workpiece surface；Positively charged abrasive grain is the positively charged alumina abrasive grain in surface.Workpiece surface roughness is uniform, surface quality is high, high in machining efficiency after present invention polishing.
Description
Technical field
It is Fenton's reaction and the Lorentz force collaboration polishing of a kind of silicon carbide plane the invention belongs to Ultra-precision Turning field
Method.
Background technique
Silicon carbide is as third generation semiconductor material, with forbidden bandwidth is big, critical breakdown strength is high, electron mobility
High, the features such as thermal conductivity is high, has in fields such as abrasive material, metallurgy, LED solid state lighting and precision electronic elements and be widely applied.Its
In, there are the surfaces matter such as surface damage is small, surface roughness is low and is evenly distributed in the fields such as precision electronic element to silicon carbide wafer
The features such as amount requires, but the hardness of silicon carbide is big, brittleness is high keeps its surface polishing very difficult.
Traditional silicon carbide polishing process, such as grind, be on abrasive disk by free abrasive grain to workpiece surface into
Row polishing is easy to cause workpiece after attrition process since distribution of the free abrasive grain on abrasive disk has very big inhomogeneities
The surface roughness of surface everywhere differs, and easily causes surface damage, seriously affects the performance of workpiece.By abrasive grain it is relatively fixed
Although the grinding method on abrasive disk can make abrasive grain distribution keep uniformly, due in process of lapping abrasive grain apart from abrasive disk return
The distance for turning center is different, and the abrasive grain line rotation speed of different location is unequal, leads to the abrasive wear close to grinding plate edge
Degree is much larger than the abrasive grain close to the centre of gyration, different so as to cause the polishing of workpiece surface, makes under machined surface quality
Drop.In magnetically grinding process relatively advanced at present, magnetic abrasive grain centrifugal action when with magnetic field high speed rotation is obvious, side
Abrasive grain is detached from magnetically confined and disperses outward at edge, finally also results in the problem of polishing force is unevenly distributed in machining area.
Compared to above-mentioned silicon carbide polishing process, the polishing of low pressure abrasive Flow is a kind of novel silicon carbide polishing skill
Art, using fluid as the carrier of abrasive grain, the flowing by abrasive grain with respect to silicon carbide workpiece surface is processed by shot blasting.Low pressure abrasive grain
The usefulness of stream polishing, which embodies silicon carbide workpiece after a polish, has lower surface roughness, surface quality more evenly
With smaller surface damage rate etc..
Although unrivaled superiority that there are many polishings of low pressure abrasive Flow, asked in the polishing of low pressure abrasive Flow there are still some
Topic is embodied in following three aspects: (1) friction of fluid and workpiece surface and abrasive grain and workpiece surface in process
Collision will lead to energy loss, causes pressure on the fluid streamwise in machining area to decline, makes the polishing of workpiece surface
Power is unevenly distributed, and workpiece surface roughness Distribution value is uneven after eventually leading to polishing, declines surface quality.(2) due to
The hardness of silicon carbide workpiece is very high, and ordinary abrasive grain reaches ideal processing effect and need the long period to its processing difficulties.(3) low
Pressing the material of abrasive Flow polishing to cut, erosion rate is lower, and abrasive grain causes abrasive grain to workpiece surface wave crest the insufficient pressure of workpiece surface
Shearing force is smaller.Abrasive grain is distributed more at random in the section of vertical fluid flow direction, and only small part is attached in workpiece surface
Close abrasive grain can play practical polishing action, and most of abrasive grain only flows through process chamber with fluid, is not engaged in polishing,
Abrasive grain utilization rate is low.
Summary of the invention
In order to overcome silicon carbide plane low pressure abrasive Flow polish present in polish after workpiece surface roughness is uneven, table
The problem of face quality is low, processing efficiency is low, the present invention provide after a kind of polishing workpiece surface roughness is uniform, surface quality is high,
The Fenton's reaction and Lorentz force of silicon carbide plane high in machining efficiency cooperate with polishing method.
The technical solution adopted by the present invention to solve the technical problems is:
The Fenton's reaction and Lorentz force of a kind of silicon carbide plane cooperate with polishing method, and silicon carbide plane polishing passes through low pressure
Abrasive Flow is realized；The runner top surface inclination adjustable angle of the low pressure abrasive Flow, by replacing the angle being placed in processing unit (plant)
Block part is realized；The Fenton's reaction is to make to be carbonized by Fenton's reaction before polishing to the surface preparation of silicon carbide workpiece
Silicon workpiece surface generates thin layer of silicon dioxide, reduces workpiece surface hardness；The Lorentz force is work of the magnetic field to electrification abrasive grain
Firmly；The magnetic field is to be placed in caused by the electromagnet at processing unit (plant) rear to be parallel to workpiece surface and perpendicular to abrasive Flow stream
The adjustable uniform magnetic field of intensity in dynamic direction, under the action of the magnetic field, the positively charged abrasive grain of flow is vertically referred to
It acts on to the Lorentz force of workpiece surface, is moved to workpiece surface；The positively charged abrasive grain is the positively charged aluminium oxide in surface
Abrasive grain.
Further, the system for realizing the method include by pressure gauge, processing unit (plant), abrasive grain cylinder, pump, control valve group at
Low pressure abrasive Flow circuit, the electromagnet being placed in below processing unit (plant) and are at the blender and water cooling plant being placed in abrasive grain cylinder
System controller；The polishing method are as follows: under the action of blender and water cooling plant, uniformly and constant temperature abrasive Flow by pump from
Abrasive grain cylinder is sucked out and is sent into pipeline, flows into the processing unit (plant) for being equipped with electromagnet after control valve and pressure gauge, then pass through
Pipeline flows back into abrasive grain cylinder, and whole process is realized by system controller and automatically controlled.
Further, the pressure of the low pressure abrasive Flow is in 0.05~2MPa.Compared to high pressure abrasive Flow, low pressure abrasive Flow
In abrasive grain flowing velocity it is slow, smaller to the shearing force of workpiece surface, material removal amount is few, and controllability is good.
Further, the runner top surface inclination adjustable angle is real by the angle block gauge part in replacement processing unit (plant)
Now, low pressure abrasive Flow enters from left side when processing, right side outflow.Fluid and abrasive grain and processing unit (plant) cavity or work in process
The frictional impact on part surface will lead to energy loss, cause the pressure in flow field on streamwise to decline, and then lead to abrasive grain
Shearing force decline to workpiece surface；Uniformly increased angle block gauge part is spent at one group of inclination angle from 0 to 10, can be at 0~10 degree
The inclination angle for equably changing top surface on processing flow channel in range makes processing flow channel become wedge shape space, realizes cross section of fluid channel product
Along being gradually reduced for abrasive grain flow direction, the pressure decline in flow field on streamwise is made up, to make up workpiece surface edge
Shearing force decline on flow direction, makes the polishing force of workpiece surface be evenly distributed, and workpiece surface roughness distribution is equal after polishing
It is even.
The Fenton's reaction is the surface preparation to silicon carbide workpiece, makes silicon carbide work by Fenton's reaction before polishing
Part Surface Creation thin layer of silicon dioxide reduces workpiece surface hardness；First silicon carbide workpiece is placed in the workpiece set of PMMA material,
Only expose the thin layer for needing to polish, places into Fenton's reaction reagent；The Fenton's reaction reagent is 10% by mass fraction
Hydrogenperoxide steam generator and nano ferriferrous oxide powder as catalysts are formulated, nanometer four in Fenton's reaction reagent
The mass fraction of Fe 3 O powder is 1.5%, and nano ferriferrous oxide ionizes out ferrous ion in the solution, in ferrous iron
Under the catalytic action of ion, hydrogen peroxide decomposes the hydroxyl radical free radical for generating and having strong oxidizing property, is exposed to Fenton's reaction reagent
In carborundum thin layer be oxidized generation thin layer of silicon dioxide.The hardness of silica is lower with respect to silicon carbide, after this is conducive to
Continuous abrasive Flow polishing, makes workpiece surface roughness after polishing reduce and improve processing efficiency.Silicon carbide workpiece is by PMMA workpiece set
The part of package has neither part nor lot in reaction, unaffected.
The magnetic field is applied to be parallel to workpiece surface and perpendicular to the equal of abrasive Flow flow direction in cuniform channel
Even magnetic field, the electromagnet by being placed in processing unit (plant) rear generate, and magnetic field strength is adjustable in the section 0.01~1.00T, magnetic field
Intensity is adjusted by system controller, and the adjusting of magnetic field strength is realized by the size of current changed in electromagnet coil.
Further, by Lorentz force when the negatively charged grain motion, be parallel in cuniform channel workpiece surface and
Perpendicular to the uniform magnetic field of abrasive Flow flow direction, magnetic field strength B, the vertical paper of magnetic direction is inside；Negatively charged abrasive grain exists
It is acted on when being moved in magnetic field by the Lorentz force F for being perpendicularly oriented to workpiece surface, while parallel workpiece surface flows to the right
Along the direction flowing for being perpendicularly oriented to workpiece surface.The Lorentz force for being perpendicularly oriented to workpiece surface can not only increase abrasive grain to workpiece
The pressure on surface assembles the abrasive grain of the disorder distribution in cross section of fluid channel originally to workpiece surface, and extends abrasive grain in workpiece
The residence time on surface, to improve processing efficiency.
The positively charged abrasive grain alumina abrasive grain positively charged for surface, 0.2~2 μm of partial size, the matter in abrasive Flow
Score is measured between 2~15%, alumina abrasive grain surface is positively charged to be realized by PH environment.
The PH environment refers to that abrasive Flow is in the acidity of PH=4, under acidic environment of the abrasive Flow in PH=4, aluminium oxide mill
Grain surface is positively charged.
The abrasive Flow temperature that the pump fever and control valve throttling will lead in processing circuit rises, and in abrasive Flow temperature
Rising will lead to abrasive Flow viscosity change, and workpiece surface polishing force is caused to change, and ultimately cause quality of finish decline.To avoid abrasive grain
Stream temperature raising leads to above-mentioned adverse effect, installs water cooling plant in abrasive grain cylinder, adjusts water cooling plant by system controller
Cooling water flow to maintain the temperature of abrasive Flow within the scope of 15~45 DEG C.
Beneficial effects of the present invention are mainly manifested in: because of fluid in process and abrasive grain and being added by adjustable angle compensation
Tooling sets the pressure in flow field caused by energy loss caused by the frictional impact of cavity or workpiece surface on streamwise
Decline, makes the polishing force of workpiece surface be evenly distributed, and surface roughness is consistent everywhere for workpiece after polishing, improves surface quality.It is logical
Crossing Fenton's reaction reduces silicon carbide workpiece surface hardness, reduces workpiece surface roughness after polishing, and improve processing efficiency.Together
When, it assists polishing by Lorentz force, increases abrasive grain to the pressure of workpiece surface, and make the disorder distribution in cross section of fluid channel originally
Abrasive grain to workpiece surface assemble, improve workpiece surface nearby wear particle concentration, so that abrasive grain is fully used, further increase plus
Work efficiency rate.
Detailed description of the invention
Fig. 1 is system of processing schematic diagram.
Fig. 2 is processing unit (plant) schematic diagram.
Fig. 3 is processing unit (plant) sectional view.
Fig. 4 is processing unit (plant) explosive view.
Fig. 5 is angle block gauge part exemplary diagram.
Fig. 6 is Fenton's reaction schematic diagram.
Fig. 7 is magnetic field schematic diagram.
By Lorentz force schematic diagram when Fig. 8 is positively charged grain motion.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
Referring to Fig.1~Fig. 8, the Fenton's reaction and Lorentz force of a kind of silicon carbide plane cooperate with polishing method, and silicon carbide is flat
Face polishing is realized by low pressure abrasive Flow；The runner top surface inclination adjustable angle of the low pressure abrasive Flow is placed in by replacement and is added
Tooling is set interior angle block gauge part and is realized；The Fenton's reaction is passed through before polishing to the surface preparation of silicon carbide workpiece
Fenton's reaction makes silicon carbide workpiece surface generate thin layer of silicon dioxide, reduces workpiece surface hardness；The Lorentz force is magnetic field
To the active force of electrification abrasive grain；The magnetic field be placed in caused by the electromagnet at processing unit (plant) rear be parallel to workpiece surface and
Perpendicular to the adjustable uniform magnetic field of intensity of abrasive Flow flow direction, under the action of the magnetic field, flow it is positively charged
Abrasive grain is acted on by the Lorentz force for being perpendicularly oriented to workpiece surface, is moved to workpiece surface；The positively charged abrasive grain is surface band
The alumina abrasive grain of positive charge.
Realize that the system of the method is as shown in Figure 1, comprising: by pressure gauge (1), processing unit (plant) (2), abrasive grain cylinder (6), pump
(8), the low pressure abrasive Flow circuit of control valve (9) composition, the electromagnet (3) being placed in below processing unit (plant) (2) are placed in abrasive grain cylinder
(6) blender (4) and water cooling plant (5) and system controller (7) in.Entire system of processing passes through system controller (7)
It realizes and automatically controls.
Process is as follows: after carrying out Fenton's reaction pretreatment to silicon carbide workpiece surface, starting system of processing, electromagnet
(3) it is powered, generates the uniform magnetic field perpendicular to workpiece surface, magnetic field strength is logical can to cross system controller (7) in 0.01~1.00T
Adjustment in range.Blender (4) starting, by abrasive grain cylinder magnetic-particle and Compostie abrasive particles stir evenly.Pump (8) starting, control
Valve (9) processed is opened, and abrasive Flow is sent into processing unit (plant) (2), is provided into the adjustable angle cuniform channel space of processing unit (plant) (2)
The low pressure of 0.05~2MPa carries out polishing.Water cooling plant (5) starting, system controller (7) is by being mounted in abrasive grain cylinder
Thermometer measure the temperature in abrasive grain cylinder and control the cooling water flow of water cooling plant (5), abrasive Flow temperature is maintained fair
Perhaps in range.
Processing unit (plant) (3) as shown in Fig. 2, its internal structure as shown in figure 3, its part composition is as shown in Figure 4.Processing unit (plant)
By end cap (201), screw (202), sealing ring (203), entrance guiding part (204), angle block gauge (205), cavity (206), workpiece
Slot (207), workpiece plate (208), outlet conducting element (209) composition.
The runner top surface inclination adjustable angle is realized by the angle block gauge part (205) of replacement processing unit (plant) (3).Angle
For block part as shown in figure 5, the inclination angle of exemplary angles block 205a is 0 degree, the inclination angle of exemplary angles block 205b is 10 degree.Angle
Block is slid into cavity in the form of sliding block, and limits its horizontal displacement by two sides conducting element and end cap.One group of inclination angle from 0 to
10 degree of uniform increased angle block gauge parts can make uniform adjustment of the cuniform channel angle within the scope of 0~10 degree, realize wedge shape
The different degrees of diminution of cross section of fluid channel product streamwise, makes up the pressure loss of streamwise in runner, makes workpiece surface
Shearing force is evenly distributed.
Configure Fenton's reaction reagent.First configuration quality score is 10% hydrogenperoxide steam generator, then nanometer is added thereto
Ferroferric oxide powder is 1.5% as catalyst, the mass fraction of catalyst.
Fenton's reaction pretreatment is carried out to silicon carbide workpiece surface, as shown in fig. 6, first silicon carbide workpiece (101) is placed in
In the workpiece set (102) of PMMA material, only exposes the thin layer for needing to polish, place into the container of Fenton's reaction reagent (103)
(104) in.Nano ferriferrous oxide ionizes out ferrous ion in the solution, under the catalytic action of ferrous ion, peroxide
Change hydrogen and decompose the hydroxyl radical free radical for generating and there is strong oxidizing property, the carborundum thin layer being exposed in Fenton's reaction reagent is oxidized life
At thin layer of silicon dioxide, and it is unaffected by the part of PMMA workpiece set package.The silica that silicon carbide workpiece surface generates
The hardness of thin layer is relatively low, is conducive to subsequent abrasive Flow polishing, workpiece surface roughness after polishing is made to reduce and improve processing
Efficiency.
Entrance guiding part (204) and outlet conducting element (209) in processing unit (plant) (22) are respectively used to flow channel entry point and go out
The water conservancy diversion of mouth realizes the smooth variation of flow channel entry point and discharge area, reduces coefficient of partial resistance, reduces abrasive grain stream energy damage
It loses.Conducting element is connect by pin with cavity.
It is placed on workpiece plate (208) by the pretreated workpiece of Fenton's reaction (210), then workpiece plate is placed in
In workpiece slot (207).Using detachable workpiece plate, when processing workpiece of different shapes, it is only necessary to according to workpiece shapes system
Make corresponding workpiece plate and replace, does not need replacement workpiece slot, compared to the workpiece plate of monoblock type, dismountable workpiece plate
Less with material, processing is easier.
Workpiece slot is slid into the groove of cavity bottom in the form of sliding block, and limits its water by two sides conducting element and end cap
Prosposition moves.
The sealing of entire processing unit (plant) is realized by two sealing rings.Two sealing rings are for the groove between end cap and cavity
Sealing, prevents abrasive grain from flowing to processing unit (plant) outward leakage.
Processing unit (plant) two sides end cap is covered, screw is tightened.Processing unit (plant) is connected by the sealing pipe screw thread of two sides with hose,
It accesses in abrasive Flow polishing circuit.
Abrasive Flow is prepared, the dilute sulfuric acid that concentration is 5% is added into deionized water makes it be in the acid state of PH=4, so
0.2~2 μm of partial size of alumina abrasive grain is added afterwards, controls mass fraction of the alumina abrasive grain in abrasive Flow between 2~15%,
Under the acidic environment of PH=4, alumina abrasive grain surface is positively charged.
The abrasive Flow of preparation is added in abrasive grain cylinder, starts blender, keeps abrasive Flow uniform.It is opened by system controller
Pump and control valve carry out low pressure abrasive Flow polishing.
Magnetic field strength is set by system controller, is placed in the electromagnet (3) at processing unit (plant) (2) rear in cuniform channel
Application is parallel to workpiece surface and perpendicular to the uniform magnetic field of abrasive Flow flow direction, as shown in Figure 7.The positively charged oxidation in surface
It is acted on when aluminium abrasive grain (211) moves in magnetic field by the Lorentz force F for being perpendicularly oriented to workpiece (210) surface, as shown in figure 8,
Along the direction flowing for being perpendicularly oriented to workpiece surface while parallel workpiece surface flows to the right.It is perpendicularly oriented to the Lip river of workpiece surface
Lun Zili can not only increase abrasive grain to the pressure of workpiece surface, also make the abrasive grain of the disorder distribution in cross section of fluid channel originally to work
Part surface aggregation, and extend abrasive grain in the residence time of workpiece surface, to improve processing efficiency.
System controller reads abrasive Flow temperature by the thermometer being mounted in abrasive grain cylinder, according to the change of abrasive Flow temperature
Change, start water cooling plant and adjust cooling water flow, controls the temperature of abrasive Flow within the scope of 15~45 DEG C.
Claims (10)
1. the Fenton's reaction and Lorentz force of a kind of silicon carbide plane cooperate with polishing method, which is characterized in that silicon carbide plane is thrown
Light is realized by low pressure abrasive Flow；The runner top surface inclination adjustable angle of the low pressure abrasive Flow is placed in processing dress by replacement
Angle block gauge part in setting is realized；The Fenton's reaction is to pass through Fenton before polishing to the surface preparation of silicon carbide workpiece
Reaction makes silicon carbide workpiece surface generate thin layer of silicon dioxide, reduces workpiece surface hardness；The Lorentz force is magnetic field to band
The active force of electric mill grain；The magnetic field is to be placed in caused by the electromagnet at processing unit (plant) rear to be parallel to workpiece surface and vertical
The adjustable uniform magnetic field of intensity in abrasive Flow flow direction, under the action of the magnetic field, the positively charged abrasive grain of flow
It is acted on by the Lorentz force for being perpendicularly oriented to workpiece surface, is moved to workpiece surface；The positively charged abrasive grain is that surface is positively charged
The alumina abrasive grain of lotus.
2. the Fenton's reaction and Lorentz force of silicon carbide plane as described in claim 1 cooperate with polishing method, which is characterized in that
Realize the method system include by pressure gauge, processing unit (plant), abrasive grain cylinder, pump, control valve group at low pressure abrasive Flow circuit,
The electromagnet being placed in below processing unit (plant), the blender and water cooling plant and system controller being placed in abrasive grain cylinder；The throwing
Light method are as follows: under the action of blender and water cooling plant, uniformly and the abrasive Flow of constant temperature is sucked out and is sent from abrasive grain cylinder by pump
Enter pipeline, is flowed into the processing unit (plant) for being equipped with electromagnet after control valve and pressure gauge, then abrasive grain is flowed back by pipeline
Cylinder, whole process are realized by system controller and are automatically controlled.
3. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
In the pressure of the low pressure abrasive Flow is in 0.05~2MPa.
4. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
It is realized in, the runner top surface inclination adjustable angle by the angle block gauge part in replacement processing unit (plant), low pressure is ground when processing
Grain stream enters from left side, right side outflow.The friction of fluid and abrasive grain and processing unit (plant) cavity or workpiece surface is touched in process
It hits and will lead to energy loss, cause the pressure in flow field on streamwise to decline, and then abrasive grain is caused to cut workpiece surface
Shear force decline；Uniformly increased angle block gauge part is spent at one group of inclination angle from 0 to 10, can equably be changed within the scope of 0~10 degree
The inclination angle for becoming top surface on processing flow channel makes processing flow channel become wedge shape space, realizes cross section of fluid channel product along abrasive grain flow direction
Be gradually reduced.
5. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
In the Fenton's reaction is the surface preparation to silicon carbide workpiece, makes silicon carbide workpiece table by Fenton's reaction before polishing
Face generates thin layer of silicon dioxide, reduces workpiece surface hardness；First silicon carbide workpiece is placed in the workpiece set of PMMA material, is only revealed
The thin layer for needing to polish out places into Fenton's reaction reagent；The peroxide that the Fenton's reaction reagent is 10% by mass fraction
Change hydrogen solution and the nano ferriferrous oxide powder as catalysts is formulated, nanometer four aoxidizes in Fenton's reaction reagent
The mass fraction of three iron powders is 1.5%, and nano ferriferrous oxide ionizes out ferrous ion in the solution, in ferrous ion
Catalytic action under, hydrogen peroxide decompose generate have strong oxidizing property hydroxyl radical free radical, be exposed in Fenton's reaction reagent
Carborundum thin layer is oxidized generation thin layer of silicon dioxide.
6. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
In the magnetic field is applied to be parallel to workpiece surface and the uniform magnetic perpendicular to abrasive Flow flow direction in cuniform channel
, the electromagnet by being placed in processing unit (plant) rear generates, and magnetic field strength is adjustable in the section 0.01~1.00T, magnetic field strength
It is adjusted by system controller, the adjusting of magnetic field strength is realized by the size of current changed in electromagnet coil.
7. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
Workpiece surface is parallel to by Lorentz force when, the negatively charged grain motion, in cuniform channel and perpendicular to abrasive Flow stream
The uniform magnetic field in dynamic direction, magnetic field strength B, the vertical paper of magnetic direction are inside；When negatively charged abrasive grain moves in magnetic field by
It is acted on to the Lorentz force F for being perpendicularly oriented to workpiece surface, edge is perpendicularly oriented to workpiece while parallel workpiece surface flows to the right
It flows in the direction on surface.The Lorentz force for being perpendicularly oriented to workpiece surface can not only increase abrasive grain to the pressure of workpiece surface, also
Make originally in cross section of fluid channel disorder distribution abrasive grain to workpiece surface assemble, and extend abrasive grain workpiece surface it is resident when
Between, to improve processing efficiency.
8. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature exists
In, the positively charged abrasive grain alumina abrasive grain positively charged for surface, 0.2~2 μm of partial size, the mass fraction in abrasive Flow
Between 2~15%, alumina abrasive grain surface is positively charged to be realized by PH environment.
9. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 8 cooperate with polishing method, which is characterized in that
The PH environment refers to that abrasive Flow is in the acidity of PH=4, under acidic environment of the abrasive Flow in PH=4, alumina abrasive grain surface band
Positive charge.
10. the Fenton's reaction and Lorentz force of silicon carbide plane as claimed in claim 1 or 2 cooperate with polishing method, feature
It is, the abrasive Flow temperature that the pump fever and control valve throttling will lead in processing circuit rises, and abrasive Flow temperature rises
It will lead to abrasive Flow viscosity change, workpiece surface polishing force caused to change, ultimately cause quality of finish decline.To avoid abrasive Flow
Temperature raising leads to above-mentioned adverse effect, installs water cooling plant in abrasive grain cylinder, adjusts water cooling plant by system controller
Cooling water flow is to maintain the temperature of abrasive Flow within the scope of 15~45 DEG C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113118967A (en) * | 2021-03-17 | 2021-07-16 | 广东纳诺格莱科技有限公司 | Abrasive particle oriented solid-phase reaction grinding disc suitable for SiC wafer and preparation method and application thereof |
| CN116121758A (en) * | 2023-03-16 | 2023-05-16 | 江苏中科云控智能工业装备有限公司 | Aluminum alloy integrated die casting deburring device |
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