CN110349883B - 接合***和接合方法 - Google Patents

接合***和接合方法 Download PDF

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Publication number: CN110349883B
Authority: CN; China
Prior art keywords: substrate; bonding; bonding surface; wafer; dew condensation
Prior art date: 2018-04-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201910269270.5A

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English (en)

Chinese (zh)

Other versions

CN110349883A (zh

Inventor

永田笃史

前田浩史

菅川贤治

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-04-05

Filing date

2019-04-04

Publication date

2022-07-01

2019-04-04 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2019-10-18 Publication of CN110349883A publication Critical patent/CN110349883A/zh

2022-07-01 Application granted granted Critical

2022-07-01 Publication of CN110349883B publication Critical patent/CN110349883B/zh

Status Active legal-status Critical Current

2039-04-04 Anticipated expiration legal-status Critical

Links

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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Plasma & Fusion (AREA)
Electromagnetism (AREA)
Spectroscopy & Molecular Physics (AREA)
Pressure Welding/Diffusion-Bonding (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Cleaning Or Drying Semiconductors (AREA)

CN201910269270.5A 2018-04-05 2019-04-04 接合***和接合方法 Active CN110349883B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018-072832		2018-04-05
JP2018072832A JP6813816B2 (ja)	2018-04-05	2018-04-05	接合システムおよび接合方法

Publications (2)

Publication Number	Publication Date
CN110349883A CN110349883A (zh)	2019-10-18
CN110349883B true CN110349883B (zh)	2022-07-01

Family

ID=68099062

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201910269270.5A Active CN110349883B (zh)	2018-04-05	2019-04-04	接合***和接合方法

Country Status (5)

Country	Link
US (1)	US10847495B2 (ja)
JP (1)	JP6813816B2 (ja)
KR (1)	KR102290822B1 (ja)
CN (1)	CN110349883B (ja)
TW (1)	TWI743460B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102116371B1 (ko) *	2019-09-19	2020-05-28	주식회사티티엘	Pdms 접합장치
JP7471862B2 (ja) *	2020-02-27	2024-04-22	キオクシア株式会社	貼合装置および貼合方法
JP7106782B1 (ja)	2022-05-19	2022-07-26	株式会社日立パワーソリューションズ	超音波映像装置および接合ウェハへの液体浸入防止方法

Citations (6)

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CN102034666A (zh) *	2009-10-01	2011-04-27	显示器生产服务株式会社	等离子反应内室的侧部气体喷射器
JP2015018926A (ja) *	2013-07-10	2015-01-29	東京エレクトロン株式会社	接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
CN104488066A (zh) *	2012-04-27	2015-04-01	原子能与替代能源委员会	在具有负焦耳-汤姆逊系数的气体的氛围中的接合方法
CN105470182A (zh) *	2014-09-29	2016-04-06	东京毅力科创株式会社	输送方法和检查***
CN107611060A (zh) *	2016-07-12	2018-01-19	东京毅力科创株式会社	接合***
JP2018026413A (ja) *	2016-08-09	2018-02-15	東京エレクトロン株式会社	接合装置および接合システム

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JP5421825B2 (ja) *	2010-03-09	2014-02-19	東京エレクトロン株式会社	接合システム、接合方法、プログラム及びコンピュータ記憶媒体
KR101590661B1 (ko) *	2010-09-13	2016-02-01	도쿄엘렉트론가부시키가이샤	액처리 장치, 액처리 방법 및 기억 매체
JP2013012564A (ja) *	2011-06-29	2013-01-17	Tokyo Electron Ltd	表面改質装置、接合システム、表面改質方法、プログラム及びコンピュータ記憶媒体
JP6415391B2 (ja)	2015-06-08	2018-10-31	東京エレクトロン株式会社	表面改質方法、プログラム、コンピュータ記憶媒体、表面改質装置及び接合システム

2018
- 2018-04-05 JP JP2018072832A patent/JP6813816B2/ja active Active
2019
- 2019-03-22 TW TW108110033A patent/TWI743460B/zh active
- 2019-04-04 CN CN201910269270.5A patent/CN110349883B/zh active Active
- 2019-04-04 KR KR1020190039648A patent/KR102290822B1/ko active IP Right Grant
- 2019-04-04 US US16/374,847 patent/US10847495B2/en active Active

Patent Citations (6)

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Publication number	Priority date	Publication date	Assignee	Title
CN102034666A (zh) *	2009-10-01	2011-04-27	显示器生产服务株式会社	等离子反应内室的侧部气体喷射器
CN104488066A (zh) *	2012-04-27	2015-04-01	原子能与替代能源委员会	在具有负焦耳-汤姆逊系数的气体的氛围中的接合方法
JP2015018926A (ja) *	2013-07-10	2015-01-29	東京エレクトロン株式会社	接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
CN105470182A (zh) *	2014-09-29	2016-04-06	东京毅力科创株式会社	输送方法和检查***
CN107611060A (zh) *	2016-07-12	2018-01-19	东京毅力科创株式会社	接合***
JP2018026413A (ja) *	2016-08-09	2018-02-15	東京エレクトロン株式会社	接合装置および接合システム

Also Published As

Publication number	Publication date
JP2019186314A (ja)	2019-10-24
KR20190116937A (ko)	2019-10-15
TW201944866A (zh)	2019-11-16
TWI743460B (zh)	2021-10-21
US20190312007A1 (en)	2019-10-10
CN110349883A (zh)	2019-10-18
KR102290822B1 (ko)	2021-08-18
US10847495B2 (en)	2020-11-24
JP6813816B2 (ja)	2021-01-13

Legal Events

Date	Code	Title
2019-10-18	PB01	Publication
2019-10-18	PB01	Publication
2021-01-19	SE01	Entry into force of request for substantive examination
2021-01-19	SE01	Entry into force of request for substantive examination
2022-07-01	GR01	Patent grant
2022-07-01	GR01	Patent grant

Publication	Publication Date	Title
WO2012114826A1 (ja)	2012-08-30	接合装置、接合システム及び接合方法
CN110349883B (zh)	2022-07-01	接合***和接合方法
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KR101953934B1 (ko)	2019-03-04	접합 장치 및 접합 시스템
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