CN110349829A - A kind of horizontal plasma continuous processing system - Google Patents

A kind of horizontal plasma continuous processing system Download PDF

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Publication number
CN110349829A
CN110349829A CN201910744978.1A CN201910744978A CN110349829A CN 110349829 A CN110349829 A CN 110349829A CN 201910744978 A CN201910744978 A CN 201910744978A CN 110349829 A CN110349829 A CN 110349829A
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China
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process cavity
room
gas
specimen chamber
sample room
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CN201910744978.1A
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Chinese (zh)
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CN110349829B (en
Inventor
陈培峰
宗泽源
程凡雄
刘庆峰
汤家云
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Yangzhou Guoxing Technology Co Ltd
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Yangzhou Guoxing Technology Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899Multiple chambers, e.g. cluster tools
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Abstract

The invention discloses a kind of horizontal continuous plasma process systems, the system includes: a blowing room, one Sample Room, one process cavity, one goes out specimen chamber and a rewinding room, process cavity air pressure is equal to or less than using the Sample Room before and after adjusting process chamber and out specimen chamber air pressure and achievees the purpose that plasma continuous service so that process cavity does not have barometric fluctuation when passing in and out substrate;By the independent delivery roller that three sections or more are arranged in process cavity, the substrate that the idler wheel of import is sent for quickly receiving Sample Room, the idler wheel of outlet is for quickly by board transport to specimen chamber out, it ensure that the processing region feeding speed of middle section core is stablized constant, has accomplished the stabilization to substrate, continuous and continual processing;The processing substrate mode of horizontal continuity makes substrate pass through to continuous tandem heating region in process cavity, and the plasma treatment procedure that every plate base passes through is essentially identical;Thus the difference between plate and plate is reduced to minimum;And for monolithic pole plate, the plasma experience in region in the transmit direction is also identical, therefore the uniformity in single piece plate can also be better than the fixed single substrate in position.

Description

A kind of horizontal plasma continuous processing system
Technical field
The present invention relates to plasmas to the process field of material, is more particularly related to using low pressure plasma It discharges come at the etching of glue residue in the hole for being generated in PC board fabricating processes and the horizontal continuity of surface cleaning activation Reason method.
Background technique
Plasma etching technology is widely used in the glue residue removal in printed circuit board manufacture, surface modification and polytetrafluoro The activation processing of ethylene.The apparatus for processing plasma that current industry generally uses is single-chamber multi-disc processing system, such as patent The device that US20060163201A is proposed.As shown in Figure 1, the plasma etching system that the patent refers to includes an entirety Plasma chamber 12, comprising at least a pair of electrode plate 38 being disposed vertically in cavity, (PCB is with all kinds of for processed substrate Plate) 26 be fixed on frame 29 after, it is whole that frame 29 is pushed into cavity 12.Then substrate 26 be at electrode plate 38 it Between gap in.After vacuumizing in the cavity and being passed through process gas, generated between electrode plate 38 by plasma electrical source etc. Gas ions handle the substrate 26 electrode plate 38.It is readily apparent that such system architecture needs manually to carry out pair Substrate 26 carries out upper and lower plates operation, thus can not be added to equipment in automatic continuous production system.Processing substrate it is uniform Property depend on equipment plasma uniformity, under the framework of patent US20060163201A, in entire treatment process, base Plate is fixed on motionless in working chamber, spatial position locating for each plate base, air flow method and electrode pad manufacture assembly On difference it is different, be difficult to accomplish the consistency of plasma environment locating for same batch substrate, thus treated base Not only there are biggish differences between plate and plate for plate, but also also have biggish uniform sex differernce on same plate.
Loading and unloading are required manual intervention for single-chamber multi-piece plasma processing system, and can not be continuous raw with automation The problem of production is plugged into discloses a kind of horizontal continuous vacuum plasma processor in patent of invention CN204817348U.Such as Fig. 2 Shown, integral device is divided into feed end 4, electrostatic treatment room 5(plasma processing chamber), discharge end 6, and in 4 He of feed end Two groove bodies 7 and 8 between electrostatic treatment room 5, two groove bodies 9 and 10 between electrostatic treatment room 5 and discharge end 6.Each slot Body includes independent isolating door, vacuum pump and idler wheel;The indoor production process of patent of invention electrostatic is that plate reaches charging End 4 is evacuated down to 10Torr, and 5 air pressure of electrostatic treatment room is increased to 10Torr, opens isolating door, and plate enters electrostatic treatment room, Electrostatic treatment room is evacuated down to operating air pressure, starts to work;Processing terminate is also required to similar process and could go out at electrostatic for plate Manage chamber body.Which results in the indoor plasmas of electrostatic, and a stable work is unable to maintain that during cavity barometric fluctuation Make state, work is a kind of discrete beat-type;The operational efficiency and stability of whole equipment are very low.
Summary of the invention
In order to overcome drawbacks described above, the present invention provides a kind of horizontal plasma continuous processing systems, realize continuous The real continuous processing production that plasma continues working in loading and unloading, process cavity.
The present invention is to solve technical solution used by its technical problem: a kind of horizontal plasma continuous processing System, the system include: a blowing room, and a Sample Room, a process cavity, one goes out specimen chamber and a rewinding room, blowing Between room and Sample Room, between Sample Room and process cavity, between process cavity and out specimen chamber, have between specimen chamber and rewinding room out respectively Being capable of independently operated gas-tight door;
Blowing room, Sample Room, process cavity, specimen chamber and rewinding room have respective independently operated delivery roller system out;
Transmission system in process cavity is also divided into three sections of independently operated delivery roller systems;Respectively first section delivery roller group, Middle section delivery roller group and latter end delivery roller group can be adjusted arbitrarily by the speed of the delivery roller group in control process cavity The duration that section plank is handled in process cavity;Each delivery roller group is equipped with sensor,
First section roller group is neighbouring with Sample Room, and the region occupied is more than or equal to the length in a piece of substrate travel.In Section roller group is core segment, occupies the central area of process cavity and the length of the overwhelming majority.Substrate plasma processing when Between determined by controlling the speed of middle section idler wheel.Latter end roller group and specimen chamber out are neighbouring, the region occupied be more than or equal to Length in a piece of substrate travel.For process cavity in the case where no substrate passes in and out, three sections of idler wheels are with the speed of middle section idler wheel Synchronized operation.When originally on section idler wheel without substrate, the gas-tight door between Sample Room and process cavity is opened, the indoor roller group of sample introduction It is synchronous with section wheel speeds at the beginning of process cavity, and passed the indoor substrate of sample introduction with the speed of service much higher than process cavity middle section idler wheel It is defeated at the beginning of process cavity on section idler wheel.When board transport in place after, process cavity just section wheel speeds be restored to it is synchronized with middle section idler wheel, Substrate is set handle and can be transferred on the idler wheel of middle section with the speed of process requirements.Similarly, have on latter end idler wheel a piece of complete Substrate when, gas-tight door between specimen chamber and process cavity is opened out, and process cavity latter end idler wheel is synchronous with specimen chamber wheel speeds out, with Substrate is transmitted to out specimen chamber from process cavity by the speed of service much higher than process cavity middle section idler wheel.When board transport in place after, end Section idler wheel is restored to the substrate synchronized with middle section idler wheel, preparation reception will come from middle section idler wheel.Pass through point of three sections of idler wheels Control is opened, substrate is affected not always when the middle section roller area of plasma core is handled, has accomplished plasma It is the constant speed of processing, stabilization, continuous and uninterrupted.
Substrate is handled by heating region to continuous tandem in process cavity, so that every plate base passed through Plasma treatment procedure is identical, thus the difference between plate and plate is reduced to minimum.And for monolithic pole plate, it is passing The plasma experience in the region on defeated direction is also identical, therefore the uniformity in single piece plate can also be better than position and consolidate Fixed single substrate;
After there is no plank in section delivery roller group at the beginning of the sensor sensing to process cavity of first section delivery roller group, open Sample Room and Gas-tight door between process cavity, plank are quickly sent to process cavity from Sample Room, are then shut off gas-tight door, in latter end delivery roller group Sensor sensing to process cavity latter end delivery roller group on pass by after a piece of complete plank, open process cavity and out specimen chamber it Between gas-tight door, plank is quickly sent to out specimen chamber from process cavity, is then shut off gas-tight door;
Sample Room, process cavity and specimen chamber has independent pumping and inflation system out;After substrate enters Sample Room, Sample Room is taken out Vacuum, stops pumping after the air pressure of sample introduction chamber pressure arrival process cavity, discharge chamber is filled with nitrogen to atmosphere after gas-tight door closing Pressure condition opens gas-tight door, by board transport into rewinding room, by the power, gas and pumping speed that adjust every group of electrode zone Rate can make plank carry out different processing during traveling and reach different processing intent
As a further improvement of the present invention, roller group conveyer system is the first delivery roller group in blowing room;In Sample Room For the second delivery roller group;Delivery roller group in process cavity is subdivided into three groups of energy independent control, respectively just section transmission rolling Wheel group, middle section delivery roller group and latter end delivery roller group;It is out third delivery roller group in specimen chamber;It is passed in rewinding room for the 4th Roller group is sent, includes independently operated gas-tight door between each adjacent cavity, the gas-tight door between blowing room and Sample Room For the first gas-tight door, the gas-tight door between Sample Room and process cavity is the second gas-tight door, airtight between process cavity and out specimen chamber Door is third gas-tight door, and the gas-tight door between specimen chamber and rewinding room is the 4th gas-tight door, blowing room and Sample Room and rewinding out It is normal atmosphere (An), process cavity and Sample Room and work that the condition that gas-tight door between room and out specimen chamber is opened, which is two cavitys, Specimen chamber air pressure is identical as process cavity air pressure for Sample Room or out for the condition that gas-tight door between skill chamber and out specimen chamber is opened, so that After gas-tight door is opened, the air pressure in process cavity is not in big ups and downs and influences the stable operation of plasma.
It as a further improvement of the present invention, include upper and lower two infrared radiation heating modules in Sample Room, it can be right Product carries out quick heat temperature raising, after sample introduction chamber pressure is lower than 1Torr, pre-heating module carry out rapidly pre-warming two-sided to substrate Heating makes substrate temperature close to the technological temperature of setting.
It as a further improvement of the present invention, include 4 groups of electrode assemblies in the process cavity, every group of electrode assembly includes Upper and lower two identical pole plate assemblies, 4 groups of electrodes in process cavity are mutually indepedent, possess respective power supply, temperature control, gas supply system System, certainly, the electrode module quantity of length and the Qi Nei configuration of process cavity can carry out in quantity according to actual process requirements Increase and decrease, while the position of each electrode group is provided with independent bleeding point,
As a further improvement of the present invention, each electrode group possesses respective plasma exciatiaon power supply, and every group of electrode possesses Independent air supply system, each air supply system includes 4 groups of MFC, for controlling oxygen, carbon tetrafluoride, argon gas and the inflow of nitrogen, The position of every group of electrode is both provided with bleeding point, and each bleeding point is controlled the rate of pumping by a butterfly valve, at all electrodes Bleeding point be finally aggregated into vacuum pump group.
As a further improvement of the present invention, radio-frequency voltage is loaded on the pole plate ontology, be used for and opposite other one Plasma is formed between piece pole plate, the hot oil for being heated or cooled enters pole plate from entrance, flows uniformly through inside pole plate It is flowed out afterwards from outlet.Reaction gas is flowed by import, and enters pole plate interior zone by metal tracheae, finally from jet Mouth sprays, into heating region.
As a further improvement of the present invention, there is baffle N barrier between the electrode group in the process cavity, baffle has water Flat gap allows delivery roller group and the product transmitted thereon to pass through.The respective gas supply of electrode group is because baffle is deposited Most just to be siphoned away by vacuum-pumping system before being diffused into neighbouring baffle area.Wherein, it is evacuated the setting of baffle, is made It obtains after the working gas being filled with from electrode zone can stop near product and be taken away again via the region of product side by bleeding point. The narrow bleed-off passage that baffle is formed between pumping baffle and electrode increases the gas flow rate in the region, further prevents two Gas phase counterdiffusion between electrode group.
As a further improvement of the present invention, the Sample Room is provided with independent vacuum pump group, vacuum pump group and sample introduction The position of room connection is provided with solenoid valve, and solenoid valve is used to control the switch of Sample Room input nitrogen;Specimen chamber is provided with independence out Vacuum pump group, the position that vacuum pump group is connect with specimen chamber out is provided with solenoid valve, and solenoid valve is for controlling out specimen chamber input nitrogen The switch of gas.
As a further improvement of the present invention, in system operation, blowing room and rewinding room are in normal atmosphere always Under pressure ring border, Sample Room and out specimen chamber need to change between normal atmosphere (An) numerical value and process cavity air pressure numerical value according to process, Process cavity is in the operating air pressure of 0.10 ~ 0.30Torr always.Specifically atmospheric pressure value is determined by the process requirements of practical application, The air pressure in each group electrode module region can be made the same, there can also be difference, no matter which kind of situation, each group electrode module region Air pressure stablize constant so that plasma continuous service, the treatment process of substrate will not be interrupted.
The beneficial effects of the present invention are: being equal to or less than work using the Sample Room before and after adjusting process chamber and out specimen chamber air pressure Skill chamber air pressure achievees the purpose that plasma continuous service so that process cavity does not have barometric fluctuation when passing in and out substrate;Pass through In process cavity, three sections or more of independent delivery roller, the base that the idler wheel of import is sent for quickly receiving Sample Room are set Plate, the idler wheel of outlet is for ensure that the processing region feeding speed of middle section core is stablized quickly by board transport to specimen chamber is gone out It is constant, accomplish the stabilization to substrate, continuous and continual processing;The processing substrate mode of horizontal continuity makes substrate in technique Pass through to intracavitary continuous tandem heating region, the plasma treatment procedure that every plate base passes through is essentially identical;Thus Difference between plate and plate is reduced to minimum;And for monolithic pole plate, the plasma in region in the transmit direction Experience is also identical, therefore the uniformity in single piece plate can also be better than the fixed single substrate in position.
Detailed description of the invention
Fig. 1 is the Detailed description of the invention of patent of invention US20060163201A;
Fig. 2 is the Detailed description of the invention of patent of invention CN204817348U;
Fig. 3 is a kind of preferred system architecture schematic diagram of the present invention, is respectively marked in attached drawing as follows: 1, blowing room, 2, Sample Room, 3, Process cavity, 4, go out specimen chamber, 5, rewinding room, A1,1 delivery roller group of blowing room, A2,2 delivery roller group of Sample Room, A3, process cavity 3 A6, first section delivery roller group, A4,3 middle section delivery roller group of process cavity, A5,3 latter end delivery roller group of process cavity go out the biography of specimen chamber 4 Send roller group, A7,5 delivery roller group of rewinding room, gas-tight door between B1, blowing room 1 and Sample Room 2, B2, Sample Room 2 and technique B4, gas-tight door between chamber 3, B3, process cavity 3 and gas-tight door between specimen chamber 4 out go out specimen chamber 4 and receive gas-tight door between specimen chamber 5, C, 2 pre-heating module of Sample Room, D, 3 electrode of process cavity;
Fig. 4 is a kind of preferred pole plate assembly construction of the present invention, and respectively mark in attached drawing as follows: H1, hot oil outlet, H2, hot oil enter Mouthful, J1, gas access, J2, metal tracheae, J3, gas spout, K, pole plate ontology;
Fig. 5 is a kind of preferred each cavity pumping of the present invention, gas supply and power supply architecture schematic diagram, is respectively marked in attached drawing as follows: E1, E3,2 exhaust pipe solenoid valve of Sample Room, E2,2 loading line solenoid valve of Sample Room go out 4 exhaust pipe solenoid valve of specimen chamber, E4, go out F3,4 loading line solenoid valve of specimen chamber, F1,2 vacuum pump group of Sample Room, F2,3 vacuum pump group of process cavity go out 4 vacuum pump group of specimen chamber, G1, first electrode position bleeding point butterfly valve, G2, second electrode position bleeding point butterfly valve, G3, third electrode position bleeding point butterfly valve, G4, Four electrode position bleeding point butterfly valves, P1, first electrode power supply, P2, second electrode power supply, P3, third electrode supply, P4, the 4th electricity Pole power supply;
Fig. 6 is the schematic diagram of baffle between a kind of preferred electrode group of the present invention, is respectively marked in attached drawing as follows: A, delivery roller group, D, electrode, G, butterfly valve, L, bleeding point baffle, M, bleeding point, baffle between N, electrode group.
Specific embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and attached drawing, the invention will be further described, should The examples are only for explaining the invention, is not intended to limit the scope of the present invention..
As shown in figure 3, a kind of horizontal plasma continuous processing system, which includes: a blowing room 1, one Sample Room 2, a process cavity 3, one goes out specimen chamber 4 and a rewinding room 5, between blowing room 1 and Sample Room 2, Sample Room 2 and work Between skill chamber 3, between process cavity 3 and out specimen chamber 4, have between the 5 of specimen chamber 4 and rewinding room out it is respective can be independently operated airtight Door;
Blowing room 1, Sample Room 2, process cavity 3, specimen chamber 4 and rewinding room 5 have respective independently operated delivery roller system out;
Transmission system in process cavity 3 is also divided into three sections of independently operated delivery roller systems;Respectively first section delivery roller group A3, middle section delivery roller group A4 and latter end delivery roller group A5 pass through the speed of delivery roller group A3 ~ A5 in control process cavity 3 Degree, can arbitrarily adjust the duration that plank is handled in process cavity;Each delivery roller group is equipped with sensor,
Sample introduction is opened after no plank on section delivery roller group A3 at the beginning of the sensor sensing to process cavity of first section delivery roller group A3 Gas-tight door B2 between room and process cavity, plank are quickly sent to process cavity 3 from Sample Room 2, are then shut off gas-tight door B2, and latter end passes After sending a piece of complete plank of passing by the sensor sensing to process cavity latter end delivery roller group A5 on roller group A5, work is opened Gas-tight door B3 between skill chamber and out specimen chamber, plank are quickly sent to out specimen chamber 4 from process cavity, are then shut off gas-tight door B3;
Sample Room 2, process cavity 3 and specimen chamber 4 has independent pumping and inflation system out;After substrate enters Sample Room 2, Sample Room 2 It is vacuumized, stops pumping after the air pressure of 2 pressure of Sample Room arrival process cavity, discharge chamber 4 is filled with after gas-tight door B3 closing Nitrogen opens gas-tight door B4 to atmospheric pressure state, by board transport into rewinding room 5, by adjust every group of electrode zone power, Gas and the speed of exhaust can make plank carry out different processing during traveling and reach different processing intent
Roller group conveyer system is the first delivery roller group A1 in blowing room 1;It is the second delivery roller group A2 in Sample Room 2; Delivery roller group in process cavity 3 is subdivided into three groups of energy independent control, respectively just section delivery roller group A3, middle section transmission rolling Wheel group A4 and latter end delivery roller group A5;It is out third delivery roller group A6 in specimen chamber 4;It is the 4th delivery roller in rewinding room 5 A7 is organized, includes independently operated gas-tight door between each adjacent cavity, the gas-tight door between blowing room 1 and Sample Room 2 is First gas-tight door B1, the gas-tight door between Sample Room 2 and process cavity 3 is the second gas-tight door B2, between process cavity 3 and out specimen chamber 4 Gas-tight door be third gas-tight door B3, out the gas-tight door between specimen chamber 4 and rewinding room 5 be the 4th gas-tight door B4, blowing room 1 and into It is normal atmosphere (An), technique that the condition that gas-tight door between specimen chamber 2 and rewinding room 5 and out specimen chamber 4 is opened, which is two cavitys, The condition that gas-tight door between chamber 3 and Sample Room 2 and process cavity 3 and out specimen chamber 4 is opened is Sample Room 2 or 4 air pressure of specimen chamber out It is identical as process cavity air pressure so that after gas-tight door opening, the air pressure in process cavity is not in big ups and downs and influences etc. from The stable operation of daughter.
Two infrared radiation heating modules above and below including in Sample Room 2 can carry out quick heat temperature raising to product, when After 2 pressure of Sample Room is lower than 1Torr, pre-heating module C carry out rapidly pre-warming heating two-sided to substrate makes substrate temperature is close to set Fixed technological temperature, technological temperature are determined that range is at 40 ~ 100 DEG C by specific technique.
It include 4 groups of electrode assemblies in the process cavity 3, every group of electrode assembly includes that upper and lower two identical pole plates are total At 4 groups of electrodes in process cavity 3 are mutually indepedent, possess respective power supply, temperature control, air supply system, while the position of each electrode group It installs and is equipped with independent bleeding point, as shown in figure 5,
Each electrode group possesses respective plasma exciatiaon power supply P1 ~ P4, and every group of electrode possesses independent air supply system, each Air supply system includes 4 groups of MFC, and for controlling oxygen, carbon tetrafluoride, argon gas and the inflow of nitrogen, the position of every group of electrode is all set It is equipped with bleeding point, each bleeding point is controlled the rate of pumping by a butterfly valve G1 ~ G4, and the bleeding point at all electrodes finally converges Always arrive vacuum pump group F2.
As shown in figure 4, loading radio-frequency voltage on the pole plate ontology K, it to be used for the shape between opposite other a piece of pole plate At plasma, the hot oil for being heated or cooled enters pole plate from entrance H2, from outlet H1 after flowing uniformly through inside pole plate Outflow.Reaction gas is flowed by import J1, and enters pole plate interior zone by metal tracheae J2, finally from puff prot J3 It sprays, into heating region.
As shown in fig. 6, there is baffle N barrier between electrode group in the process cavity 3, baffle N has horizontal gap, permits Perhaps delivery roller group and the product transmitted thereon pass through.Presence of the respective gas supply of electrode group because of baffle N, the overwhelming majority It is just siphoned away by vacuum-pumping system before being diffused into neighbouring baffle area.Wherein, it is evacuated the setting of baffle L, so that from electrode district The working gas that domain is filled with is taken away via the region of product side by bleeding point again after capable of stopping near product.It is evacuated baffle L The narrow bleed-off passage that baffle N is formed between electrode increases the gas flow rate in the region, further prevents two electrode groups Between gas phase counterdiffusion.
The Sample Room 2 is provided with independent vacuum pump group F1, and the position that vacuum pump group F1 is connect with Sample Room 2 is provided with Solenoid valve E1, solenoid valve E2 are used to control the switch that Sample Room 2 inputs nitrogen;Specimen chamber 4 is provided with independent vacuum pump group F3 out, Vacuum pump group F3 is provided with solenoid valve E3 with the position that specimen chamber 4 is connect out, and solenoid valve E4 is used to control out specimen chamber 4 and inputs nitrogen Switch.
In system operation, blowing room 1 and rewinding room 5 are in always under normal atmosphere (An) environment, Sample Room 2 and out sample Room 4 needs to change between normal atmosphere (An) numerical value and process cavity air pressure numerical value according to process, and process cavity 3 is in 0.10 always ~ Under the operating air pressure of 0.30Torr, specific atmospheric pressure value is determined by the process requirements of practical application, can make each group electrode mould The air pressure in block region is the same, can also there is difference, no matter which kind of situation, the air pressure in each group electrode module region be stablize it is constant , so that plasma continuous service, the treatment process of substrate will not be interrupted.
The course of work of this system is as follows:
One, blowing room 1 is atmospheric environment, and the manually or mechanically mode that can carry out puts plate;
Two, after the sensor sensing in blowing room 1 is put into substrate, gas-tight door B1 is opened, board transport is entered into Sample Room 2, It is then shut off gas-tight door B1;
Three, after substrate enters Sample Room 2, Sample Room 2 is vacuumized, and after pressure is lower than 1Torr, pre-heating module C is to base The two-sided carry out rapidly pre-warming heating of plate makes substrate temperature close to technological temperature, stops after the air pressure of 2 pressure of Sample Room arrival process cavity Only it is evacuated;
Four, gas-tight door is opened after no substrate on the sensor sensing in process cavity 3 to process cavity 3 just section delivery roller group A3 B2, substrate are quickly sent to process cavity 3 from Sample Room 2, are then shut off gas-tight door B2, and Sample Room 2 is filled with nitrogen and is restored to atmosphere Pressure condition;
It five, include 4 groups of electrode D in process cavity 3, every group of pole plate includes respective power supply, gas is supplied and heating system, Each group pole plate is allowed individually to control respective parameter.By applying radio-frequency voltage on pole plate, so that the gas point between pole plate Son, which is excited to ionize, generates plasma, carries out surface treatment and de-smear to substrate.Pass through the transmission rolling in control process cavity 3 The speed of wheel group A3 ~ A5 can arbitrarily adjust the duration that substrate is handled in process cavity.By the function for adjusting every group of electrode zone Rate, gas and the speed of exhaust can make substrate carry out different processing during traveling and reach different processing intents;
Six, it passes by the sensor sensing in process cavity 3 to 3 latter end delivery roller group A5 of process cavity after a piece of complete substrate, Gas-tight door B3 is opened, substrate is quickly sent to out specimen chamber 4 from process cavity 3, is then shut off gas-tight door B3;
Seven, length is large enough to hold multi-piece substrate in process cavity 3, substrate can be made continuously to input from Sample Room 2, from sample out Room 4 exports, and the plasma in process cavity 3 does not interrupt, and reaches continuous processing purpose;
Eight, discharge chamber 4 is filled with nitrogen to atmospheric pressure state, opens gas-tight door B4 after gas-tight door B3 closing, by board transport into Rewinding room 5 is plugged into the automation equipment of follow-up process from 5 science and technology of rewinding room.

Claims (8)

1. a kind of horizontal plasma continuous processing system, which is characterized in that the system includes: a blowing room 1, one into Specimen chamber 2, a process cavity 3, one goes out specimen chamber 4 and a rewinding room 5, between blowing room 1 and Sample Room 2, Sample Room 2 and technique Between chamber 3, between process cavity 3 and out specimen chamber 4, have between specimen chamber 4 and rewinding room 5 out it is respective can be independently operated airtight Door;
Blowing room 1, Sample Room 2, process cavity 3, specimen chamber 4 and rewinding room 5 have respective independently operated delivery roller system out;
Transmission system in process cavity 3 is also divided into three sections of independently operated delivery roller systems;
Sample Room 2, process cavity 3 and specimen chamber 4 has independent pumping and an inflation system out, the lasting work of process cavity when realizing input and output material Make.
2. a kind of horizontal plasma continuous processing system according to claim 1, it is characterised in that: roller group transmission System is the first delivery roller group A1 in blowing room 1;It is the second delivery roller group A2 in Sample Room 2;Transmission in process cavity 3 Roller group is subdivided into three groups of energy independent control, and respectively just section delivery roller group A3, middle section delivery roller group A4 and latter end pass Send roller group A5;It is out third delivery roller group A6 in specimen chamber 4;It is the 4th delivery roller group A7 in rewinding room 5, it is each adjacent It include independently operated gas-tight door between cavity, the gas-tight door between blowing room 1 and Sample Room 2 is the first gas-tight door B1, into Gas-tight door between specimen chamber 2 and process cavity 3 is the second gas-tight door B2, and the gas-tight door between process cavity 3 and out specimen chamber 4 is third gas Close door B3, the gas-tight door between specimen chamber 4 and rewinding room 5 is the 4th gas-tight door B4, blowing room 1 and Sample Room 2 and rewinding room 5 out The condition that gas-tight door between specimen chamber 4 is opened out be two cavitys be normal atmosphere (An), process cavity 3 and Sample Room 2 and 4 air pressure of specimen chamber is identical as process cavity air pressure for Sample Room 2 or out for the condition that gas-tight door between process cavity 3 and out specimen chamber 4 is opened Or it is slightly lower.
3. a kind of horizontal plasma continuous processing system according to claim 1, it is characterised in that: in Sample Room 2 Two infrared radiation heating modules above and below including can carry out quick heat temperature raising to product.
4. a kind of horizontal plasma continuous processing system according to claim 1, it is characterised in that: the process cavity It include 4 groups or 4 groups or more of electrode assembly in 3, every group of electrode assembly includes upper and lower two identical pole plate assemblies, process cavity Every group of electrode in 3 is mutually indepedent, possesses respective power supply, temperature control, air supply system, while the position of each electrode group is provided with Independent bleeding point.
5. a kind of horizontal plasma continuous processing system according to claim 4, it is characterised in that: each electrode group Possess respective plasma exciatiaon power supply, each electrode group possesses independent air supply system, and each air supply system includes multiple groups Gas mass flow controller, for controlling the inflow of different operating gas;The position of every group of electrode is both provided with bleeding point, often A bleeding point is controlled the rate of pumping by a butterfly valve, and the bleeding point at all electrodes is finally aggregated into the gas supply of process cavity 3 System.
6. a kind of horizontal plasma continuous processing system according to claim 4, it is characterised in that: each pole plate sheet It is loaded on body K and forms plasma between radio-frequency voltage and opposite other a piece of pole plate;Liquid for being heated or cooled is situated between Matter enters pole plate, flows out after flowing uniformly through inside pole plate.
7. a kind of horizontal plasma continuous processing system according to claim 4, it is characterised in that: the process cavity There is baffle N barrier between electrode group in 3, there is baffle N horizontal permission delivery roller group and the product transmitted thereon to pass through Gap.
8. a kind of horizontal plasma continuous processing system according to claim 1, it is characterised in that: system was run Cheng Zhong, blowing room 1 and rewinding room 5 are in always under normal atmosphere (An) environment, and Sample Room 2 and out specimen chamber 4 are needed according to process It is changed between normal atmosphere (An) numerical value and process cavity air pressure numerical value, process cavity 3 is in the operating air pressure of 0.10 ~ 0.30Torr always Under.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729886B (en) * 2020-07-21 2021-06-01 群翊工業股份有限公司 Continuous vacuum heating equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1875454A (en) * 2003-10-28 2006-12-06 诺信公司 Plasma processing system and plasma treatment process
US20060289409A1 (en) * 2005-05-23 2006-12-28 Dae-Kyu Choi Plasma source with discharge inducing bridge and plasma processing system using the same
CN104167381A (en) * 2014-07-11 2014-11-26 湖南红太阳光电科技有限公司 Continuous vacuum ultraviolet light ozone surface cleaning and oxidation modification equipment and using method thereof
CN210223943U (en) * 2019-08-13 2020-03-31 扬州国兴技术有限公司 Horizontal plasma continuous processing system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1875454A (en) * 2003-10-28 2006-12-06 诺信公司 Plasma processing system and plasma treatment process
US20060289409A1 (en) * 2005-05-23 2006-12-28 Dae-Kyu Choi Plasma source with discharge inducing bridge and plasma processing system using the same
CN104167381A (en) * 2014-07-11 2014-11-26 湖南红太阳光电科技有限公司 Continuous vacuum ultraviolet light ozone surface cleaning and oxidation modification equipment and using method thereof
CN210223943U (en) * 2019-08-13 2020-03-31 扬州国兴技术有限公司 Horizontal plasma continuous processing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729886B (en) * 2020-07-21 2021-06-01 群翊工業股份有限公司 Continuous vacuum heating equipment

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