CN212560432U - Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment - Google Patents
Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment Download PDFInfo
- Publication number
- CN212560432U CN212560432U CN202021761956.0U CN202021761956U CN212560432U CN 212560432 U CN212560432 U CN 212560432U CN 202021761956 U CN202021761956 U CN 202021761956U CN 212560432 U CN212560432 U CN 212560432U
- Authority
- CN
- China
- Prior art keywords
- stage
- rectifying plate
- gas
- air
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a multistage rectification gas circuit system of vacuum coating equipment multichannel income gas, even if face the substrate of large tracts of land, it also can make the coating film effect on the substrate unanimous, can obviously promote whole coating film homogeneity. In the technical scheme of the utility model, the rectifying plate is divided into N multiplied by S independent airflow control areas, a discrete air path control mode is adopted, the actual conditions of the substrate and the process gas in each area are combined, and the airflow access parameters of each independent airflow control area are independently adjusted through the independent airflow controller; and (3) setting 1-stage or multi-stage rectification according to the characteristics of the process gas, and performing multi-stage rectification and graded diffusion on the process gas to ensure that the coating effect areas of all the areas are consistent.
Description
Technical Field
The utility model relates to a vacuum coating control technical field specifically is a vacuum coating equipment multichannel income gas multistage rectification gas circuit system.
Background
The vacuum vapor deposition technology has wide application in industrial production and scientific research. The vacuum vapor deposition technique is to introduce process gas into a vacuum process chamber under the premise of an initial vacuum state, and then apply reaction conditions, such as temperature, electric field, radiation, laser and the like, to the process gas and a coating substrate to enable the process gas and the substrate to carry out physical and chemical reaction, and finally form a film on the substrate. However, as shown in fig. 1, in the gas path system of the current vacuum vapor deposition technology, the process gas is controlled by the gas flow control device, is delivered to the centralized gas hole through the gas delivery pipeline, is then divided into the dispersed gas through the flow dividing gas holes of the rectifying plate, and undergoes a process reaction on the coating substrate located in the coating process area; however, in the prior art, because the distances from the concentrated gas port to the positions of the respective branch gas holes of the rectifying plate are different, the concentration, the gas pressure, the flow rate and the like of the process gas have obvious differences, which can cause the problem of uneven film coating effect; particularly, under the condition of large-area coating demand, the problems of poor coating uniformity, low process consistency in the coating area and the like generally exist.
Disclosure of Invention
In order to avoid in the large tracts of land coating process, the problem that the coating homogeneity that takes place is poor, the interior process uniformity of coating area is low, the utility model provides a multistage rectification gas circuit system of aerifing of vacuum coating equipment multichannel, even if face the substrate of large tracts of land, it also can make the coating film effect on the substrate unanimous, can obviously promote whole coating film homogeneity.
The technical scheme of the utility model is like this: the utility model provides a multistage rectification gas circuit system of vacuum coating equipment multichannel income gas, it includes: the cowling panel, its characterized in that: the rectifying plate comprises a first-stage rectifying plate and a second-stage rectifying plate which are sequentially arranged from top to bottom; the rectifying plate is divided into N multiplied by S independent airflow control areas, a first-stage flow dividing air hole is formed in the first-stage rectifying plate, and a second-stage flow dividing air hole is formed in the second-stage rectifying plate; the gas flow control device also comprises separation gas ports, and each separation gas port is communicated with the first-stage rectifying plate in the independent gas flow control area corresponding to the separation gas port.
It is further characterized in that:
the first-stage rectifying plate is arranged below the multilayer electrode plate and the electrode base, the first-stage rectifying plate and the second-stage rectifying plate are fixedly connected through a fixing component; all the separation air ports are arranged above the multilayer electrode plate and communicated with the first-stage rectifying plate in the corresponding area through air passages;
the density of the first-stage shunting air holes is less than that of the second-stage shunting air holes.
The utility model provides a multistage rectification gas circuit system of vacuum coating equipment multichannel income gas, divide the cowling panel into NxS independent air current control area, adopt discrete gas circuit control mode, combine the actual condition of substrate, process gas itself in each area, independently adjust the air current of each independent air current control area through independent air current controller and let in the parameter, improve the uniformity of coating film effect on the substrate; meanwhile, 1-stage or multi-stage rectification is set according to the characteristics of the process gas, and the process gas is subjected to multi-stage rectification and graded diffusion, so that the coating effect areas of all areas are consistent, and the integral coating uniformity is improved.
Drawings
FIG. 1 is a schematic diagram of a gas circuit system of an air deposition technique in the prior art;
fig. 2 is a schematic structural diagram of a top view of a rectifying plate in the technical solution of the present invention;
fig. 3 is a schematic diagram of a multi-path gas inlet multi-stage rectification gas path system in the present invention;
fig. 4 is a schematic sectional structural view of the multi-path gas inlet multi-stage rectification gas path system of the present invention;
fig. 5 is a schematic structural diagram of the multi-path gas-inlet multi-stage rectification process gas circuit system of the present invention after decomposition;
fig. 6 is a schematic structural diagram of a one-level rectifying plate in the present invention.
Detailed Description
As shown in fig. 2 and 3, the utility model relates to a work flow of multi-path gas-inlet multi-stage rectification gas circuit system of vacuum coating equipment, which comprises the following steps:
s1: horizontally dividing the film coating area into N multiplied by S film coating sub-areas; wherein N is more than or equal to 2, S is more than or equal to 2, and S, N are positive integers;
the dividing method for dividing the coating area into N multiplied by S coating subareas comprises the following steps: the areas are divided equally and are divided unequally; the shape of the film coating subarea comprises: rectangular, circular, oval, triangular, parallelogram;
s2: dividing the rectifying plate into independent airflow control areas corresponding to the shapes and sizes of the film coating sub-areas one by one;
a separation gas port is arranged for each independent gas flow control area, and the process gas is guided into the film coating sub-area through the separation gas port through an area independent gas flow pipeline; each area independent air flow pipeline is provided with an independent air flow controller;
the independent air flow controller includes: valves, flowmeters;
s3: setting the airflow inlet parameters of each independent airflow controller respectively, wherein the airflow inlet parameters of each independent airflow controller are set independently; independently controlling the flow speed, the flow and the gas proportion of the process gas in each independent gas flow control area through each independent gas flow controller;
s4: m rectifying plates are arranged from top to bottom; wherein M is more than or equal to 1 and is a positive integer;
s5: conveying the substrate to a coating process area below the rectifying plate through a conveying device;
s6: the independent gas flow controller guides the process gas to a multistage rectifying area provided with M rectifying plates through an area independent gas flow pipeline and a separation gas port according to preset gas flow inlet parameters;
s7: the process gas is subjected to multi-stage rectification by M rectifying plates in the multi-stage rectification area, then is uniformly distributed to each coating subregion in the coating process area, and is subjected to process reaction with the substrate.
Designing the number and the area of the film coating sub-areas according to specific requirements in a film coating process, wherein the number and the area of the independent air flow control areas corresponding to the film coating sub-areas and the air flow inlet parameters controlled by the independent air flow controllers are independently set, and the distribution is independently set based on the area size of each film coating sub-area, the characteristics of process gas and the size of a base material; the technical proposal of the utility model is applicable to different technological processes. As shown in figure 3, under the independent air flow controller, the process gas enters the rectifying plates of 1-M levels in a discrete air flow mode through the regional independent air flow pipeline and the separation air port, and the process gas after multi-level rectification can be more uniformly diffused into the coating region to react on the coating substrate, so that the substrate in each coating sub-region can obtain a uniform coating effect, and the uniformity of the whole coating is greatly improved.
As shown in fig. 4-5, it is an embodiment of the multi-path gas-inlet multi-stage rectification gas path system of the vacuum coating equipment of the present invention, which comprises: the rectifying plate comprises a first-stage rectifying plate 3 and a second-stage rectifying plate 4 which are sequentially arranged from top to bottom; the rectifying plate is divided into NxS independent airflow control areas, a first-stage flow dividing air hole 3-2 is formed in the first-stage rectifying plate 3, and a second-stage flow dividing air hole 4-1 is formed in the second-stage rectifying plate 4; the device also comprises separation air ports 2, wherein each separation air port 2 is communicated with a first-stage rectifying plate 3 in a corresponding independent air flow control area; in this embodiment, N and S both take the value of 3, so that 9 separation ports 2 are provided in total.
The rectifying plate and the electromagnetic generating device 1 are arranged together; the first-stage rectifying plate 3 is arranged below the multilayer electrode plate 1-1 and the electrode base 1-2, the first-stage rectifying plate 3 and the second-stage rectifying plate 4 are fixedly connected through a fixing component 1-3; all the separation gas ports 2 are arranged above the multilayer electrode plate 1-1 and communicated with a gas passage 3-1 and a first-stage rectifying plate 3 in the corresponding area through a gas passage 5; the rectifying plate and the electromagnetic generating device 1 are arranged together while applying reaction conditions to the substrate in the lower coating region: electric field, process gas.
As shown in fig. 6, in this embodiment, the first-stage rectifying plate 3 is provided with first-stage shunting air holes 3-2 uniformly distributed thereon, the first-stage rectifying plate 3 is installed below the electrode base 1-2, and an air passage 3-1 is provided between the first-stage rectifying plate 3 and the electrode base 1-2; the second-stage rectifying plate 4 is provided with second-stage shunting air holes 4-1 which are uniformly distributed, and the density of the first-stage shunting air holes 3-2 is less than that of the second-stage shunting air holes 4-1; the process gas introduced by the separation gas port 2 is dispersed to the primary shunting gas holes 3-2 through the gas passage 3-1, and the process gas is dispersed by the primary shunting gas holes 3-2, then is continuously dispersed and rectified by the secondary shunting gas holes 4-1, and is uniformly dispersed to a film coating area, so that the uniformity of the whole film coating is improved.
Claims (3)
1. The utility model provides a multistage rectification gas circuit system of vacuum coating equipment multichannel income gas, it includes: the cowling panel, its characterized in that: the rectifying plate comprises a first-stage rectifying plate and a second-stage rectifying plate which are sequentially arranged from top to bottom; the rectifying plate is divided into N multiplied by S independent airflow control areas, a first-stage flow dividing air hole is formed in the first-stage rectifying plate, and a second-stage flow dividing air hole is formed in the second-stage rectifying plate; the gas flow control device also comprises separation gas ports, and each separation gas port is communicated with the first-stage rectifying plate in the independent gas flow control area corresponding to the separation gas port.
2. The multi-path air inlet multi-stage rectification air path system of the vacuum coating equipment as claimed in claim 1, wherein: the first-stage rectifying plate is arranged below the multilayer electrode plate and the electrode base, the first-stage rectifying plate and the second-stage rectifying plate are fixedly connected through a fixing component; all the separation gas ports are arranged above the multilayer electrode plate and communicated with the first-stage rectifying plate in the corresponding area through the gas passages.
3. The multi-path air inlet multi-stage rectification air path system of the vacuum coating equipment as claimed in claim 1, wherein: the density of the first-stage shunting air holes is less than that of the second-stage shunting air holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021761956.0U CN212560432U (en) | 2020-08-21 | 2020-08-21 | Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021761956.0U CN212560432U (en) | 2020-08-21 | 2020-08-21 | Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212560432U true CN212560432U (en) | 2021-02-19 |
Family
ID=74627595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021761956.0U Active CN212560432U (en) | 2020-08-21 | 2020-08-21 | Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212560432U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030141A (en) * | 2020-08-21 | 2020-12-04 | 无锡爱尔华光电科技有限公司 | Multi-path air-inlet multi-stage rectification process and air path system of vacuum coating equipment |
-
2020
- 2020-08-21 CN CN202021761956.0U patent/CN212560432U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030141A (en) * | 2020-08-21 | 2020-12-04 | 无锡爱尔华光电科技有限公司 | Multi-path air-inlet multi-stage rectification process and air path system of vacuum coating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7018940B2 (en) | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes | |
| US6616766B2 (en) | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes | |
| US10253412B2 (en) | Deposition apparatus including edge plenum showerhead assembly | |
| CN105331953B (en) | Inlet duct and semiconductor processing equipment | |
| CN105331952B (en) | Inlet duct and semiconductor processing equipment | |
| CN104975271B (en) | Inlet duct and semiconductor processing equipment | |
| TWI606510B (en) | Semiconductor processing equipment and gas shower head cooling plate | |
| CN206948696U (en) | Plate electrode structures and plasma deposition apparatus | |
| CN212560432U (en) | Multi-path air-inlet multi-stage rectification air path system of vacuum coating equipment | |
| CN1186873A (en) | Distribution plate for reaction chamber with multiple gas inlets and separate mass flow control loops | |
| CN108231620B (en) | Gas flow control device and gas flow control method thereof | |
| WO1992015116A1 (en) | Semiconductor manufacturing equipment | |
| CN203174200U (en) | Plasma enhanced atomic layer deposition equipment | |
| CN112030141A (en) | Multi-path air-inlet multi-stage rectification process and air path system of vacuum coating equipment | |
| TWI596231B (en) | Equipment for plasma treatment with process gas circulation in a variety of plasma | |
| CN100377300C (en) | Reaction chamber for semiconductor treatment | |
| CN201437552U (en) | Gas inlet system | |
| CN101748378A (en) | Film-forming carrier board and production method of solar batteries | |
| CN217026076U (en) | Intelligent flow dividing device and plasma processing equipment | |
| CN203007411U (en) | Shower head and chemical vapor deposition equipment | |
| TW202025213A (en) | Plasma deposition chamber and showerhead therefor | |
| CN213144954U (en) | Reaction chamber for epitaxial process and epitaxial equipment | |
| CN102087957A (en) | Method for controlling air inlet way in plasma processing technology | |
| CN218059173U (en) | Gas distribution system | |
| CN109661716B (en) | Vapor phase growth apparatus, method for manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |