CN1103434A - Nickel base Ni-Cu-Cr-Mn resistance alloy for sputter target - Google Patents
Nickel base Ni-Cu-Cr-Mn resistance alloy for sputter target Download PDFInfo
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- CN1103434A CN1103434A CN 93120336 CN93120336A CN1103434A CN 1103434 A CN1103434 A CN 1103434A CN 93120336 CN93120336 CN 93120336 CN 93120336 A CN93120336 A CN 93120336A CN 1103434 A CN1103434 A CN 1103434A
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Abstract
The Ni-base alloy contains (wt.%): Cu (28-43), Cr (9-14), Mn (8-14) and Ni (the rest, but not less than 40) and features low resistivity of under 1 ohm.sq.mm/m, so adapting for low-resistance sputter target. If it is used to produce metal film resistor with resistance of under 1 ohm, the sputtering time is reduced by 1/2 compared with Ni-Cr-Si sputter target.
Description
The present invention relates to a kind of Ni-based Ni-Cu-Cr-Mn series quad alloy, particularly as the Ni-Cu-Cr-Mn series resistance alloy of sputter target material.
When producing metal film resistor with sputtering method, be in the magnetron sputtering stove, to carry out, the sputter target material performance directly influences the performance of the resistive film of producing, the material of the sputtering target that uses at present is nickel chromium triangle silicon or nickel chromium triangle aluminium or nickel chromium triangle aluminum silicon alloy, higher being applicable to of its resistivity made greater than the material of 1 Ω resistance alloys film of sputtering target, and to the resistive film below 1 Ω, its sputtering target with alloy material should be able to satisfy low, the stable resistance value of resistivity, temperature coefficient of resistance is little, chemical stability good, heat-resisting, anti-corrosion and condition that antioxidant property is good.Because the resistivity of existing target is higher, can not make, though or can be with it as target, making is less than the low resistance resistive film of 1 Ω, but because target resistivity can not reach the low-resistance requirement, the essential thickness that increases resistive film, increase the sputter required time, strengthened manufacturing cost.In universal dish of the clear 61-190036 of Japanese patent application and manufacture method thereof, a kind of new non-magnetic alloy is proposed, its Chemical Composition (weight %) is Mn15～35%, Ni15～35%, Cr1.5～8%, surplus is Cu, though this alloy is because the adding of Cu composition can reach low resistance, but because the content of Ni is less in this alloy, the resistance alloys value shakiness that causes the Cu composition to cause, thermoelectric force raises, temperature coefficient of resistance is more than 100PPm/ ℃, lower owing to containing the Cr amount again, make the sticking power of the metallic resistance film of making lower, influence the attachment fastness of splash-proofing sputtering metal resistive film, the low-resistance that above-mentioned disadvantages affect is made is (less than 1 Ω mm
2/ M) the performance of resistive film should not be used.The alloy of above-mentioned prior art all is unsuitable for as producing the material of low resistive metal film with sputtering target.Therefore will make the low resistance metal film resistor less than 1 Ω, the alloy that must find a kind of suitable low-resistivity is as sputter target material.
The object of the invention provides a kind of sputtering target alloy of low-resistivity, manufactures sputtering target with it, with the low resistance metal film resistor of sputtering method production less than 1 Ω.This alloy has that resistivity is low, temperature coefficient of resistance is low, good stability, anti-corrosion, heat-resisting, advantage that antioxidant property is good, and this cost of alloy is close with the prior art target, with this alloy as sputter target material, production is less than 1 Ω low resistance metal film resistor, production time is significantly shortened, and productivity greatly improves.
The present invention is achieved in that this alloy is Ni-based Ni-Cu-Cr-Mn resistance alloy, and its Chemical Composition is Ni, Cu, Cr, Mn, and each component content (weight %) is:
Cu28～43%; Cr9～14%; Mn8～14%; Ni surplus but be not less than 40%.
Its optimum chemical composition (weight %) is Cu38%, Cr10%, Mn10%, Ni surplus.The raw material of various compositions directly has influence on the quality of this resistance alloy, and purity of raw materials should be as follows:
Ni: electrolytic nickel GB6516-86
Ni-O （Ni+Co
99.99%）
Ni-I （Ni+Co
99.9%）
Cu: electrolytic copper GB466-82
Cu-1 （Cu+Ag
99.95%）
Cu-2 （Cu+Ag
99.9%）
Cr: chromium metal: GB3211-87
Cr99-A （Cr≮99.0%）
Cr99-B （Cr≮99.0%）
Mn: manganese metal GB2774-87
Mn97 （Mn≮97.0%）
Mn96 （Mn≮96.5%）
In each Chemical Composition, Ni has certain resistivity for the basic composition in the alloy of the present invention, and is heat-resisting, anti-corrosion, antioxidant property is good, the more important thing is and to make resistance that satisfactory stability is arranged, content in alloy is lower than at 30% o'clock, and DeGrain, content increase to 40% when above, effect increases thereupon, surpass at 60% o'clock, temperature coefficient of resistance also increases, and the best is 42%; Cr has good sticking power, can make the metal film resistor adhere firmly, anti-corrosion, antioxidant property good, content is lower than at 5% o'clock in alloy, corrosion resisting property and adhesion property are relatively poor, content increases to 9% corrosion resisting property when above significantly to be increased, and is increased to 30% when above, and alloy rigidity and fragility all increase, be taken as 9～14%, the best is 10%; Mn can make alloy melting point reduce, and deoxidation effect is good, can improve the stability of resistance, and content was at 5% o'clock in alloy, and effect is not remarkable, increases along with content increases effect, surpasses at 30% o'clock, and its hardness and fragility increase, and get 8～14%, and the best is 10%; Cu is a metal the most cheap in the alloy ingredient, it can make alloy melting point and resistance reduce, and its content is lower than at 10% o'clock in alloy, reduces the DeGrain of resistance, increase with content, effect increased, but the stability of resistance also degenerates thereupon, above 45% o'clock, the stability of resistance significantly degenerates, should pay attention to especially being controlled, get 28～43%, the best be 38%.Alloy of the present invention utilizes the performance of above-mentioned various compositions, cooperatively interact and reach required low resistance alloy property, alloy of the present invention is major ingredient with Ni, add proper C u, Cr, Mn, the adding of Cu significantly reduces the resistivity of alloy, reach the low resistance requirement, and the alloy cost is descended, Ni improves the stability of resistance, Cr improves the tack of alloy, makes resistive film coating difficult drop-off, Ni, Cr, it is heat-resisting that Mn not only makes alloy have, anti-corrosion, antioxidant property, Ni, Mn has also suppressed because the rising of the alloys thermoelectric power that the Cu composition causes makes alloy that low and stable resistivity and lower temperature coefficient of resistance can be arranged.Making method of the present invention vacuumizes the post-heating fusing for each composition raw material is packed in the vacuum induction furnace, when smelting temperature reaches 1480～1520 ℃, is injected in vacuum chamber in the finish cast die shell of roasting to 850 ℃, takes out post-treatment and becomes sputtering target.
The alloy phase ratio that alloy of the present invention and prior art sputtering target material are used, the resistivity of alloy of the present invention is at 1 Ω mm
2Below/the M, and the resistivity of prior art alloy is general all at 1 Ω mm
2More than/the M, manufacture sputtering target with alloy of the present invention, under same sputtering condition, when making is lower than the low resistance of 1 Ω, its sputter required time can be saved about half, greatly reduce the manufacturing cost of low resistive metal film, boost productivity, the sputtering target material nichrosi of alloy of the present invention and prior art etc. are close on price.Be 0.440 Ω mm for example with resistivity
2The resistive film that the alloy of the present invention of/M is made the 1/4W resistor as sputter target material with sputtering method only needs 20 hours, and with nichrosi etc. as sputter target material, when making the resistive film of same resistor, because the higher 1.296 Ω mm that are about of nichrosi resistivity with sputtering method
2/ M so must make the rete thickening just can reach low resistance, approximately needs 42 hours.Therefore can improve the productivity of making the low resistance resistive film greatly with alloy of the present invention, reduce the product cost, and price Cu is cheap owing to the content of Cu is more as the alloy of the present invention of sputter target material, so its price can not improve.
Compared with prior art, alloy of the present invention have that resistance value is low and stable, temperature coefficient of resistance is little, thermoelectric force is stable, plated film adhere firmly, advantage that productive expense is low.
Do with embodiment below and specify, classify is by the various formulation Example of alloy composition of the present invention in the table 1, manufacture technology is: preparing in the vacuum induction furnace of packing into by each composition raw material, vacuumize post-heating with each composition raw material fusing, when smelting temperature reaches 1480 ℃～1520 ℃, in vacuum chamber, be injected in the precise casting mould shell of roasting to 850 ℃, take out after be machined into sputtering target.As low-resistance value sputtering target material, can find out that from table 1 five its resistivity of embodiment is respectively 0.442,0.440,0.437,0.439,0.445mm
2/ M, its temperature coefficient of resistance also is lower than 100PPm/ ℃ service requirements from 24 to 96.5PPm/ ℃, and other has satisfied the requirement of metallic resistance as mechanical propertys such as intensity, hardness, and its best proportioning is embodiment 2, and its resistivity is 0.44 Ω mm
2/ M, temperature coefficient of resistance is 20～50PPm/ ℃, compare with prior art formula nichrosi in the table 1, the resistance alloys rate reduces greatly, when using this alloy to be used for producing low resistive metal film (less than 1 Ω) as sputter target material, can boost productivity greatly, table 2 is depicted as the two contrast situation, sequence number 1,2 for to do sputtering target with alloy of the present invention, sequence number 3,4 is the prior art alloy sputtering targets, under equal conditions, is used for producing resistor porcelain body resistance situation, as can be seen, when producing 0.63～0.75 Ω resistance with sputtering method, under other condition same case, with this alloy sputtering targets than approximately saving half the time with the prior art sputtering target.For example sequence number 1,3 is compared, and produces the 1/4W resistive film, is similarly under 300,000 situations in furnace output, does sputtering target only with 20 hours (sputter) time of production with alloy of the present invention, and does sputtering target with prior art target alloy, but spends 42 hours.
Claims (2)
1, a kind of sputtering target material is a resistance alloy with Ni-based nickel, copper, chromium, manganese, it is characterized in that its Chemical Composition (weight %) is:
Cu 28～43%；
Cr 9～14%；
Mn 8～14%；
The Ni surplus, but be not less than 40%.
2,, it is characterized in that its optimum chemical composition (weight %) is according to the resistance alloy described in the claim 1:
Cu38%; Cr10%; Mn10%; The Ni surplus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93120336 CN1039245C (en) | 1993-12-03 | 1993-12-03 | Nickel base Ni-Cu-Cr-Mn resistance alloy for sputter target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93120336 CN1039245C (en) | 1993-12-03 | 1993-12-03 | Nickel base Ni-Cu-Cr-Mn resistance alloy for sputter target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1103434A true CN1103434A (en) | 1995-06-07 |
| CN1039245C CN1039245C (en) | 1998-07-22 |
Family
ID=4993255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93120336 Expired - Fee Related CN1039245C (en) | 1993-12-03 | 1993-12-03 | Nickel base Ni-Cu-Cr-Mn resistance alloy for sputter target |
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| Country | Link |
|---|---|
| CN (1) | CN1039245C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100453669C (en) * | 2007-02-08 | 2009-01-21 | 宜兴市远航合金厂 | High stabilization low resistivity nickel-base material and preparation method thereof |
| CN102352482A (en) * | 2011-09-28 | 2012-02-15 | 江苏美特林科特殊合金有限公司 | Preparation method for Ni-Cr-Si sputtering targets for metal resistance films |
| CN101008076B (en) * | 2006-01-23 | 2012-08-22 | W.C.贺利氏有限公司 | Sputtering target having high fusion phase |
| CN104485190A (en) * | 2014-11-27 | 2015-04-01 | 天津大学 | Method for improving moisture and heat resistance of Cr-Si high resistance film resistor based on electro-catalytic property |
| CN104711455A (en) * | 2013-12-16 | 2015-06-17 | 深南电路有限公司 | Film resistor material, film resistor and preparation method of film resistor |
| CN105420545A (en) * | 2015-12-02 | 2016-03-23 | 苏州龙腾万里化工科技有限公司 | Sensitive resistor alloy for milling machine instrument meter |
| CN105506434A (en) * | 2015-12-02 | 2016-04-20 | 苏州莱测检测科技有限公司 | Heating electric resistance alloy used for milling machine |
| CN105603252A (en) * | 2016-01-14 | 2016-05-25 | 厦门大学 | Application of copper-nickel alloy based on spinodal decomposition as reinforced constant-resistivity alloy |
-
1993
- 1993-12-03 CN CN 93120336 patent/CN1039245C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101008076B (en) * | 2006-01-23 | 2012-08-22 | W.C.贺利氏有限公司 | Sputtering target having high fusion phase |
| CN100453669C (en) * | 2007-02-08 | 2009-01-21 | 宜兴市远航合金厂 | High stabilization low resistivity nickel-base material and preparation method thereof |
| CN102352482A (en) * | 2011-09-28 | 2012-02-15 | 江苏美特林科特殊合金有限公司 | Preparation method for Ni-Cr-Si sputtering targets for metal resistance films |
| CN104711455A (en) * | 2013-12-16 | 2015-06-17 | 深南电路有限公司 | Film resistor material, film resistor and preparation method of film resistor |
| CN104485190A (en) * | 2014-11-27 | 2015-04-01 | 天津大学 | Method for improving moisture and heat resistance of Cr-Si high resistance film resistor based on electro-catalytic property |
| CN104485190B (en) * | 2014-11-27 | 2017-05-03 | 天津大学 | Method for improving moisture and heat resistance of Cr-Si high resistance film resistor based on electro-catalytic property |
| CN105420545A (en) * | 2015-12-02 | 2016-03-23 | 苏州龙腾万里化工科技有限公司 | Sensitive resistor alloy for milling machine instrument meter |
| CN105506434A (en) * | 2015-12-02 | 2016-04-20 | 苏州莱测检测科技有限公司 | Heating electric resistance alloy used for milling machine |
| CN105603252A (en) * | 2016-01-14 | 2016-05-25 | 厦门大学 | Application of copper-nickel alloy based on spinodal decomposition as reinforced constant-resistivity alloy |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1039245C (en) | 1998-07-22 |
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