CN110335900A - A kind of tin indium oxide/vertical graphene photodetector composite construction and preparation method thereof - Google Patents
A kind of tin indium oxide/vertical graphene photodetector composite construction and preparation method thereof Download PDFInfo
- Publication number
- CN110335900A CN110335900A CN201910372272.7A CN201910372272A CN110335900A CN 110335900 A CN110335900 A CN 110335900A CN 201910372272 A CN201910372272 A CN 201910372272A CN 110335900 A CN110335900 A CN 110335900A
- Authority
- CN
- China
- Prior art keywords
- vertical graphene
- vertical
- graphene
- photodetector
- indium oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 98
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000002131 composite material Substances 0.000 title abstract description 13
- 238000010276 construction Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 23
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010931 gold Substances 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 31
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 150000001336 alkenes Chemical class 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims 2
- 235000019441 ethanol Nutrition 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of tin indium oxide/vertical graphene photodetector composite construction and preparation method thereof, belongs to photodetector technical field.The structure of the photodetector is successively from bottom to up: substrate of the glass as device；Vertical light absorbing layer and electron transfer layer of the graphene as device；Indium tin oxide films assist diffusion layer as transparent electric current；Vertical graphene two sides are titanium/gold electrode connection external power supplies.Since vertical graphene has wide spectrum response characteristic, so that the service band of the detector, from visible light to infrared band, the indium tin oxide films layer that the present invention designs can effectively transmit photo-generated carrier, inhibits defective effect, promote the output light electric current of device.In addition, the detector possesses higher absorptivity and optical responsivity, work can be carried out under lower bias, technique preparation is simple repeatable, effectively improves the detection efficient and yield rate of detector.
Description
Technical field
The invention belongs to the structure of new material photodetector design and preparation method thereof, especially a kind of indium oxides
Tin/vertical graphene photodetector composite structural design and preparation method thereof.
Background technique
Photodetector is a kind of device for optical signal being switched to electric signal, and optical detection and photodetector are in modern society
In have great importance, from imaging, communication apparatus, the security monitoring of various sensors and display technology to basic section
Application is learned, universe is such as observed.In general, electron transition should be at least there are two energy level, and only energy is greater than the two energy levels
Between the incident photon of energy difference can just be absorbed.Thus, for example the infrared detector based on InGaAs and the light based on silicon substrate
Electric explorer, these semiconductor photo detectors, its detection wave-length coverage are very limited.However, the knot of zero band gap of graphene
Structure feature makes the wave-length coverage of its absorbable light very wide, including ultraviolet light, visible light, infrared light even arrive Terahertz, do not have
The wavelength of conventional detectors limits.The superhigh current carrying transport factor of graphene is but also the response of graphene-based photodetector is fast
Degree becomes faster.Therefore, theoretically all graphene detector is conducted extensive research with experiment.But current graphene photoelectricity
The main reason for photoresponse rate of detector is in the level of several mA/W, and responsiveness is low: the weaker light of single-layer graphene is inhaled
It receives, while carrier lifetime is in ps magnitude.
Vertical graphene is that a kind of two dimension that multi-layer graphene is uprightly formed on the substrate is carbon nano-structured, each independent
The height and width of vertical graphene platelet are adjustable from 10 nanometers to some tens of pm, but thickness only has several nanometers, even less than
1nm, each graphene film include 1 to 10 layers of graphene, and every layer at a distance of 0.34nm to 0.37nm.Vertically oriented graphene is substantially
It is graphene, but it also has unique structure feature.Therefore, vertical graphene not only has the property of graphene, but also has
Have and aligns caused some unique characteristics.Other than the general characteristic of graphene, vertically oriented graphene is also
Some unique properties, so that they have significant difference with traditional graphene film in many aspects.Vertically oriented graphite
There is alkene unique orientation, non-stacking form and big specific surface area to possess many due to these unusual characteristics
Unique machinery, chemistry, electronics, electrochemistry and photoelectric characteristic, these characteristics can play its potential use in being widely applied
On the way.
Summary of the invention
There is good translucency and charge since vertical graphene possesses unique photoelectric characteristic and indium tin oxide films
Transmission performance, the present invention provides a kind of new vertical graphene photodetectors, and describe the preparation method of detector.
This photodetector absorptivity with higher and optical responsivity.
The vertical graphene of the device is that a kind of two dimension that multi-layer graphene is uprightly formed on the substrate is carbon nano-structured, tool
There is high specific surface area.Using vertical graphene as the light absorbing layer of detector, maximize searching surface product, dramatically
Increase the search coverage of device, and then increases absorption of the detector to light.
Tin indium oxide of the present invention/vertical graphene photodetector, which is characterized in that its structure is successively from bottom to up:
Substrate of the glass as device；Light absorbing layer and electron transfer layer of the vertical graphene on substrate as device；Vertical
Indium tin oxide films on graphene assist diffusion layer as transparent electric current；Vertical graphene two sides are that titanium/gold electrode connection is outer
Portion's power supply.
The vertical graphene of the device is the stone by the horizontal buffer layer and vertical-growth with substrate contact on the buffer layer
Black alkene wafer array is constituted.If light source is radiated at vertical graphite individually using vertical graphene as when the light absorbing layer of detector
Alkene surface, graphene platelet, which absorbs luminous energy generation nonequilibrium carrier, can flow through buffering when carrier flows to respective electrode
Layer.Buffer layer is mainly made of amorphous carbon or carbide, and thickness is lower than the height of graphene platelet array.Amorphous carbon tool
There are more defect and biggish resistance, affect transporting for carrier, and then increase the response speed of detector, reduces
Detection performance.
The device deposited indium tin oxide films in vertical graphene-channel.Indium tin oxide films have high conductivity,
The physical characteristics such as high-transmission rate and corrosion resistance characteristic.Using indium tin oxide films as the transparent current-diffusion layer of detector, when
After light source is irradiated detector, vertical graphene-channel can generate photo-generated carrier, and photo-generated carrier passes through vertical graphite
Alkene enters indium tin oxide films, since indium tin oxide films have lower resistance, reduces the biography of photo-generated carrier significantly
Defeated resistance can be used as the transmission channel of quick carrier, and the movement velocity of carrier increases, and can faster reach corresponding electricity
At pole, that is, the service life of photo-generated carrier is increased, therefore the detector can generate more photoelectric currents, it is with higher
Optical responsivity.
Tin indium oxide of the invention/vertical graphene photodetector composite structural design and preparation method thereof, the photoelectricity
The structure of detector is successively from bottom to up: substrate of the glass as device；Vertical graphene as device light absorbing layer with
Electron transfer layer；Indium tin oxide films are as transparent current-diffusion layer；Vertical graphene two sides are titanium/gold electrode connection external electricals
Source.
Glass substrate of the invention is simple glass or soda-lime glass, quartz glass, sapphire glass etc..
Vertical graphene of the invention is grown directly upon in glass substrate, i.e., the horizontal buffer layer of vertical graphene with
Substrate Parallel Growth is on substrate.
Indium tin oxide films of the invention are deposited by magnetron sputtering technique, and the indium tin oxide films have
Electrically conducting transparent characteristic, preferred thickness 100nm.
Titanium/gold electrode of the invention is deposited by magnetron sputtering technique, and titanium layer and the thickness of layer gold are excellent in electrode
Choosing is 15nm and 120nm respectively.
Tin indium oxide of the invention/vertical graphene photodetector composite construction preparation method, steps are as follows:
(1) direct growth of vertical graphene on substrate, cleans vertical graphene sample: successively using acetone soln, second
Alcoholic solution and deionized water clean vertical graphene sample；
(2) indium tin oxide films are prepared: heavy using magnetron sputtering technique on the vertical graphene for being grown in glass substrate
Product indium tin oxide films, depositing temperature are 100 DEG C；
(3) etching oxidation indium tin thin film channel: using AZ5214 photoresist, and using positive photoresist photoetching process, exposure is fallen in development
Exposure mask is made using photoresist in part, carries out wet etching to it using dilute hydrochloric acid, erodes extra tin indium oxide；
(4) vertical graphene-channel is etched on indium tin oxide films channel: it is extra to be removed by the way of dry etching
Vertical graphene, etching gas is oxygen；
(5) it prepares titanium/gold electrode: using AZ5214 photoresist, being made in the channel using reversion glue photoetching process
Standby titanium/gold electrode.
Tin indium oxide of the invention/vertical graphene photodetector composite construction is in common photoconduction type photodetection
It is improved in device structure basis.So-called photoconduction type photodetector has the Ohmic contact at limit for length's semiconductor layer and both ends by one
Composition, applies a fixed bias voltage between the two Ohmic contact points, such a bias current will pass through
Semiconductor layer can be such that photoelectric current is added into partially when being radiated at the semiconductor absorption layer of device under the action of extra electric field
It sets in electric current, effectively increases the conductivity of device.The invention is rung in addition to the advantage with photoconduction type detector, such as light
Response is high, and wide spectrum response has good compatibility etc. with existing microelectronic component and circuit.By the way that vertical graphene is made
For the light absorbing layer of detector, increase the search coverage of device, and then increases absorption of the detector to light.Tin indium oxide is thin
Transparent current-diffusion layer of the film as detector, reduces the transport resistance of photo-generated carrier, generates more photoelectric currents.In addition,
The detector can be carried out work under lower bias, and technique preparation is simple repeatable, be vertical graphene photodetection
The research of device is laid a good foundation.The detector possesses higher absorptivity and optical responsivity, under lower bias
It works, technique preparation is simple repeatable, effectively improves the detection efficient and yield rate of detector.
Detailed description of the invention
Fig. 1 is tin indium oxide of the invention/vertical graphene photodetector composite construction three dimensional structure diagram；
In figure: 1.1- glass substrate, the vertical graphene-channel of 1.2-, 1.3- indium tin oxide films, 1.4- titanium/gold electrode.
Fig. 2 is tin indium oxide of the invention/vertical graphene photodetector composite construction preparation flow figure；
In figure: 2.1- cleans vertical graphene sample, and 2.2- prepares indium tin oxide films, 2.3- etching oxidation indium tin thin film
Channel, 2.4- etch vertical graphene-channel, and 2.5- prepares titanium/gold electrode.
Fig. 3 is vertical graphene photodetector (having indium tin oxide films) and vertical graphene photodetection of the invention
The photoelectric current test result figure of device (non-oxidation indium tin thin film).
Specific embodiment
Referring to Fig.1, tin indium oxide of the invention/vertical graphene photodetector composite construction, structure from bottom to up according to
It is secondary to be, 1.1- glass substrate, the vertical graphene-channel of 1.2-, 1.3- indium tin oxide films, 1.4- titanium/gold electrode.
Wherein, glass substrate of the invention is simple glass or soda-lime glass.
Vertical graphene of the invention is grown in glass substrate.
Indium tin oxide films of the invention are deposited by magnetron sputtering technique, with a thickness of 100nm.
Titanium/gold electrode of the invention is deposited by magnetron sputtering technique, titanium layer and the thickness of layer gold point in electrode
It is not 15nm and 120nm.
Vertical graphene is that a kind of two dimension that multi-layer graphene is uprightly formed on the substrate is carbon nano-structured, each independent
The height and width of vertical graphene platelet are adjustable from 10 nanometers to some tens of pm, but thickness only has several nanometers, even less than
1nm, each graphene film include 1 to 10 layers of graphene, and every layer at a distance of 0.34nm to 0.37nm.
It the following is the embodiment of the present invention, explanation be further expalined to the present invention, but be not limited to following embodiment.
Embodiment 1: tin indium oxide/vertical graphene photodetector composite construction preparation method
Tin indium oxide/vertical graphene photodetector composite construction is prepared, steps are as follows for preparation method of the invention:
(1) direct growth of vertical graphene, vertical graphene height are that 400nm or so (is wherein buffered on a glass substrate
The height of layer is far below graphene platelet height, generally 50nm or so), it cleans vertical graphene sample: successively using acetone
Solution, ethanol solution and deionized water clean vertical graphene sample；
(2) indium tin oxide films are prepared: heavy using magnetron sputtering technique on the vertical graphene for being grown in glass substrate
The indium tin oxide films of product 100nm, depositing temperature are 100 DEG C；
(3) etching oxidation indium tin thin film channel: using AZ5214 photoresist, and using positive photoresist photoetching process, exposure is fallen in development
Exposure mask is made using photoresist in part, carries out wet etching to it using dilute hydrochloric acid, erodes extra tin indium oxide；
(4) it etches vertical graphene-channel: removing extra vertical graphene, etching gas by the way of dry etching
For oxygen；
(5) it prepares titanium/gold electrode: using AZ5214 photoresist, titanium/gold electrode being prepared using reversion glue photoetching process, electricity
Extremely middle titanium layer and the thickness of layer gold are 15nm and 120nm respectively.
(6) device that preparation is completed is as shown in Figure 1.
Embodiment 2: the photoelectricity current test (i.e. comparative example) of vertical graphene photodetector (non-oxidation indium tin thin film)
A kind of vertical graphene photodetector (non-oxidation indium tin thin film), which includes: glass as device
Substrate；Vertical light absorbing layer and electron transfer layer of the graphene as device；Vertical graphene two sides are titanium/gold electrode connections
External power supply.It with reference to circle (●) curve in Fig. 3, is tested, is used in the environment of room temperature, standard atmospheric pressure
For 980nm semiconductor pump laser as testing light source, light source optical power is 239 μ W, in the case where external bias is 0.1V, the detection
Photoelectric current caused by device is 3.02 μ A, optical responsivity 12.6mA/W.
Embodiment 3: the photoelectricity current test of vertical graphene photodetector (having indium tin oxide films)
A kind of vertical graphene photodetector (having indium tin oxide films), which includes: glass as device
Substrate；Vertical light absorbing layer and electron transfer layer of the graphene as device；Indium tin oxide films are as transparent current spread
Layer；Vertical graphene two sides are titanium/gold electrode connection external power supplies.With reference to triangle (▼) curve in Fig. 3, in room temperature, mark
It is tested in the environment of quasi- atmospheric pressure, using 980nm semiconductor pump laser as testing light source, light source optical power is
239 μ W, in the case where external bias is 0.1V, photoelectric current caused by the detector is 13.4 μ A, optical responsivity 56.1mA/W.
According to embodiment 2 and 3 the experimental results showed that, have indium tin oxide films vertical graphene photodetector generate
Photoelectric current be 4 times or so of vertical graphene photodetector of non-oxidation indium tin thin film, illustrate photodetection of the invention
Device structure can effectively generate more photoelectric currents, increase the optical responsivity of device.
The above are a kind of tin indium oxide of the invention/vertical graphene photodetector composite constructions to be discussed in detail, right
Basic structure, preparation method and embodiment of the invention is described, and above-described embodiment is used to help explain base of the invention
This thought.It for those skilled in the art, without departing from the principle of the present invention, can also be to this
Invention carries out several improvement, these improved procedures are also within the scope of protection of the claims of the present invention.
Claims (7)
1. a kind of tin indium oxide/vertical graphene photodetector, which is characterized in that its structure is successively from bottom to up: glass
Substrate as device；Light absorbing layer and electron transfer layer of the vertical graphene on substrate as device；In vertical graphite
Indium tin oxide films on alkene assist diffusion layer as transparent electric current；Vertical graphene two sides are titanium/gold electrode connection external electricals
Source.
2. a kind of tin indium oxide described in accordance with the claim 1/vertical graphene photodetector, which is characterized in that glass lined
Bottom is simple glass, soda-lime glass, quartz glass or sapphire glass.
3. a kind of tin indium oxide described in accordance with the claim 1/vertical graphene photodetector, which is characterized in that vertical stone
Black alkene is grown directly upon in glass substrate, i.e., the horizontal buffer layer and substrate Parallel Growth of vertical graphene are on substrate
's.
4. a kind of tin indium oxide described in accordance with the claim 1/vertical graphene photodetector, which is characterized in that indium oxide
Tin thin film has electrically conducting transparent characteristic.
5. a kind of tin indium oxide described in accordance with the claim 1/vertical graphene photodetector, which is characterized in that indium oxide
Tin thin film is with a thickness of 100nm.
6. a kind of tin indium oxide described in accordance with the claim 1/vertical graphene photodetector, which is characterized in that titanium/gold electricity
Extremely middle titanium layer and the thickness of layer gold are preferably 15nm and 120nm respectively.
7. tin indium oxide described in any one of claims 1-6/vertical graphene photodetector preparation method, feature exist
In, comprising the following steps:
(1) direct growth of vertical graphene on substrate, cleans vertical graphene sample: successively molten using acetone soln, ethyl alcohol
Liquid and deionized water clean vertical graphene sample；
(2) indium tin oxide films are prepared: on the vertical graphene for being grown in glass substrate, depositing oxygen using magnetron sputtering technique
Change indium tin thin film, depositing temperature is 100 DEG C；
(3) etching oxidation indium tin thin film channel: using AZ5214 photoresist, and using positive photoresist photoetching process, exposed portion is fallen in development,
Make exposure mask using photoresist, wet etching is carried out to it using dilute hydrochloric acid, erodes extra tin indium oxide；
(4) vertical graphene-channel is etched on indium tin oxide films channel: extra hang down is removed by the way of dry etching
Straight graphene, etching gas are oxygen；
(5) prepare titanium/gold electrode: using AZ5214 photoresist, using reversion glue photoetching process prepared in the channel titanium/
Gold electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372272.7A CN110335900B (en) | 2019-05-06 | 2019-05-06 | Indium tin oxide/vertical graphene photoelectric detector composite structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372272.7A CN110335900B (en) | 2019-05-06 | 2019-05-06 | Indium tin oxide/vertical graphene photoelectric detector composite structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110335900A true CN110335900A (en) | 2019-10-15 |
| CN110335900B CN110335900B (en) | 2021-03-23 |
Family
ID=68139592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910372272.7A Active CN110335900B (en) | 2019-05-06 | 2019-05-06 | Indium tin oxide/vertical graphene photoelectric detector composite structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110335900B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114551629A (en) * | 2022-04-26 | 2022-05-27 | 北京邮电大学 | Ultraviolet-visible light waveband distinguishable photoelectric detector and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011159922A2 (en) * | 2010-06-16 | 2011-12-22 | The Research Foundation Of State University Of New York | Graphene films and methods of making thereof |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微***与信息技术研究所 | Terahertz photoelectric detector |
| CN105161565A (en) * | 2015-06-29 | 2015-12-16 | 上海大学 | CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector |
| CN105226127A (en) * | 2015-10-12 | 2016-01-06 | 南开大学 | A kind of graphene photodetector based on total internal reflection structure and preparation method thereof |
| CN106340442A (en) * | 2015-07-07 | 2017-01-18 | 三星电子株式会社 | Method Of Forming Graphene Nanopattern, Graphene-Containing Device, And Method Of Manufacturing The Graphene-Containing Device Using Block Copolymers |
| CN106449858A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector |
| CN107298533A (en) * | 2017-05-27 | 2017-10-27 | 北京大学 | A kind of method for preparing three-dimensional grapheme glass composite material |
| CN109473506A (en) * | 2018-10-24 | 2019-03-15 | 中国科学院上海微***与信息技术研究所 | High sensitive mid-infrared light electric explorer and preparation method thereof |
-
2019
- 2019-05-06 CN CN201910372272.7A patent/CN110335900B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011159922A2 (en) * | 2010-06-16 | 2011-12-22 | The Research Foundation Of State University Of New York | Graphene films and methods of making thereof |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微***与信息技术研究所 | Terahertz photoelectric detector |
| CN105161565A (en) * | 2015-06-29 | 2015-12-16 | 上海大学 | CdZnTe photoelectric detector comprising graphene transition layer, and preparation method for CdZnTe photoelectric detector |
| CN106340442A (en) * | 2015-07-07 | 2017-01-18 | 三星电子株式会社 | Method Of Forming Graphene Nanopattern, Graphene-Containing Device, And Method Of Manufacturing The Graphene-Containing Device Using Block Copolymers |
| CN105226127A (en) * | 2015-10-12 | 2016-01-06 | 南开大学 | A kind of graphene photodetector based on total internal reflection structure and preparation method thereof |
| CN106449858A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector |
| CN107298533A (en) * | 2017-05-27 | 2017-10-27 | 北京大学 | A kind of method for preparing three-dimensional grapheme glass composite material |
| CN109473506A (en) * | 2018-10-24 | 2019-03-15 | 中国科学院上海微***与信息技术研究所 | High sensitive mid-infrared light electric explorer and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114551629A (en) * | 2022-04-26 | 2022-05-27 | 北京邮电大学 | Ultraviolet-visible light waveband distinguishable photoelectric detector and preparation method thereof |
| CN114551629B (en) * | 2022-04-26 | 2022-09-16 | 北京邮电大学 | Ultraviolet-visible light waveband distinguishable photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110335900B (en) | 2021-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ahmadi et al. | A review on organic–inorganic halide perovskite photodetectors: device engineering and fundamental physics | |
| Tong et al. | High‐Performance Broadband Perovskite Photodetectors Based on CH3NH3PbI3/C8BTBT Heterojunction | |
| Cao et al. | Self‐Powered UV–Vis–NIR Photodetector Based on Conjugated‐Polymer/CsPbBr3 Nanowire Array | |
| US8598567B2 (en) | Color-selective quantum dot photodetectors | |
| Ma et al. | High-performance self-powered perovskite photodetector for visible light communication | |
| Foo et al. | Recent review on electron transport layers in perovskite solar cells | |
| Hu et al. | Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage | |
| CN109244246B (en) | Broadband photoelectric detector based on topological insulator bismuth selenide electrode | |
| CN103681897B (en) | A kind of infrared photoelectric detector and preparation method thereof | |
| Cong et al. | Broadband photodetector based on inorganic perovskite CsPbBr3/GeSn heterojunction | |
| Kumar et al. | Periodically patterned Si pyramids for realizing high efficient solar cells by wet etching process | |
| CN105720197A (en) | Self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and preparation method therefor | |
| WO2022151862A1 (en) | Dielectric layer response-based field effect transistor photodetector | |
| CN110137300A (en) | A kind of ultrathin membrane ultra-wideband thermoelectron photodetector | |
| Nguyen et al. | Recent advances in self‐powered and flexible UVC photodetectors | |
| CN110459548B (en) | Photoelectric detector based on Van der Waals heterojunction and preparation method thereof | |
| Fei et al. | Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect | |
| Tao et al. | Efficient photodiode-type photodetectors with perovskite thin films derived from an MAPbI 3 single-crystal precursor | |
| Adams et al. | Fabrication of rapid response self-powered photodetector using solution-processed triple cation lead-halide perovskite | |
| Peng et al. | High-performance UV–visible photodetectors based on ZnO/perovskite heterostructures | |
| JP2008124230A (en) | Photoelectric conversion device | |
| Xu et al. | A High‐Performance Self‐Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure | |
| Martínez‐Goyeneche et al. | Narrowband monolithic perovskite–perovskite tandem photodetectors | |
| Deng et al. | High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO2 Interfacial Layer | |
| Sekertekin et al. | Ultraviolet photodiode fabricated from TiO2 nanorods/p-silicon heterojunction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |