CN110277368A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN110277368A CN110277368A CN201910193191.0A CN201910193191A CN110277368A CN 110277368 A CN110277368 A CN 110277368A CN 201910193191 A CN201910193191 A CN 201910193191A CN 110277368 A CN110277368 A CN 110277368A
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- China
- Prior art keywords
- lead
- semiconductor device
- lead part
- foot
- die pad
- Prior art date
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- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 78
- 229920005989 resin Polymers 0.000 claims abstract description 78
- 238000007789 sealing Methods 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims description 31
- 238000007747 plating Methods 0.000 claims description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005452 bending Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229960002163 hydrogen peroxide Drugs 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H01L23/495—Lead-frames or other flat leads
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Abstract
本发明提供一种防止引线自密封树脂脱落、且封装面积小的半导体装置及其制造方法。半导体装置包括搭载于裸片垫的半导体芯片、引线及密封树脂,引线具有外引线部与经由自外引线部延伸设置的引线脚部而抬升的内引线部,在内引线部的底面设置有作为密封树脂的一部分的支持树脂部,在由支持树脂部的底面及外引线部与引线脚部的外侧面包围的区域形成有切口部。
Description
技术领域
本发明是涉及一种无引脚类型的半导体装置及其制造方法。
背景技术
半导体封装体根据搭载设备而要求小型化或薄型化。通过将引线设为无引脚类型来减少封装体封装面积也是小型化的一种方法。在日本专利特开2003-309241号公报中记载有一种利用统一铸模来密封密封树脂的无引脚类型的半导体封装体。
如图7(d)所示,为如下形状:利用树脂130将裸片垫121与引线122接合,经由接合线171而将搭载于裸片垫121上的半导体元件170与引线122电性连接并利用密封用树脂180加以密封。成为引线122的外侧面与密封用树脂180的侧面形成同一面的结构。
所述半导体封装体的制造方法中,如图7(a)所图示,半导体封装体的引线122为如下形状:将檐部埋入至密封树脂130内,并使引线122的底面自树脂130露出。在利用树脂130接合与裸片垫121隔开配置的引线122的引线框架的裸片垫121上搭载半导体元件170,并将半导体元件170与引线122电性连接。继而,如图7(b)所示,利用密封用树脂180加以密封,然后,如图7(c)所示,通过切割而将密封用树脂180及引线122切断,如图7(d)所示,获得经单片化的半导体封装体。
日本专利特开2003-309241号公报中记载的半导体封装体的引线122是以用以防止脱落的薄壁形状的檐部埋入至树脂130内的形式设置,平面视时,包含所述檐部的引线122的上表面的平面面积大于自树脂130露出的引线122的底面的平面面积,而成为妨碍小型化的因素。另外,在对所述半导体封装体进行基板封装时,在引线122的侧面形成填锡,封装面积进一步大于半导体封装体的平面面积。
发明内容
本发明的目的在于提供一种防止引线自密封树脂脱落且封装面积小的半导体装置及其制造方法。
本发明中,使用以下手段。
本发明的一实施方式的半导体装置包括裸片垫;半导体芯片,搭载于所述裸片垫上;引线;及密封树脂,以所述引线局部露出的方式将所述裸片垫、所述半导体芯片及所述引线密封;并且所述引线具有外引线部与经由自所述外引线部延伸设置的引线脚部而抬升(up-set)的内引线部,在所述内引线部的底面设置有作为所述密封树脂的一部分的支持树脂部,在由所述支持树脂部的底面及所述外引线部与所述引线脚部的外侧面包围的区域形成有无所述密封树脂的切口部。
本发明的一实施方式的半导体装置,其中所述内引线部的厚度薄于所述外引线部的厚度。
本发明的一实施方式的半导体装置,其中所述引线脚部相对于所述外引线部的底面垂直设置。
本发明的一实施方式的半导体装置,其中所述引线脚部相对于所述外引线部的底面倾斜。
本发明的一实施方式的半导体装置,其中在所述外引线部的底面与外侧面及所述引线脚部的外侧面设置有镀层膜。
本发明的一实施方式的半导体装置的制造方法包括:准备具有裸片垫与配置于所述裸片垫的周围的引线的引线框架的工序,所述引线包含外引线部与经由自所述外引线部延伸设置的引线脚部而抬升的内引线部;准备在与所述引线对应的位置具有下模具凸部的模具的工序;在所述裸片垫上搭载半导体芯片并将所述半导体芯片与所述引线电性连接的工序;以所述引线与所述下模具凸部对应的方式进行对位而将所述引线框架设置于所述模具的工序;在所述模具中进行树脂封入而形成统一密封块的工序;及将所述统一密封块单片化的工序。
本发明的一实施方式半导体装置的制造方法,其中在准备所述引线框架的工序中,将所述内引线部减薄。
本发明的一实施方式半导体装置的制造方法,其中在将所述统一密封块单片化的工序后包括对所述引线进行蚀刻的工序。
通过使用所述手段,可获得防止引线自密封树脂脱落且封装面积小的半导体装置及其制造方法。
附图说明
图1(a)、图1(b)是第1实施方式的半导体装置的剖面图及侧面图。
图2(a)、图2(b)、图2(c)是表示第1实施方式的半导体装置的制造方法的工序剖面图。
图3(a)、图3(b)、图3(c)是表示紧跟着图2(a)-图2(c)的第1实施方式的半导体装置的制造方法的工序剖面图。
图4是表示第1实施方式的半导体装置的制造方法的工序底面图。
图5是第1实施方式的半导体装置的封装剖面图。
图6是第2实施方式的半导体装置的剖面图。
图7(a)、图7(b)、图7(c)、图7(d)是表示先前的无引脚结构的封装体的制造方法的工序剖面图。
符号说明
1:引线
1a:内引线部
1b:引线脚部
1c:外引线部
1d:内引线部的底面
1e:外引线部的底面
1f:内引线部的外侧面
1g:引线脚部的外侧面
1h:外引线部的外侧面
2:裸片垫
3:裸片附着剂
4:半导体芯片
5:接合线
6:密封树脂
6a:支持树脂部
6b:支持树脂部的底面
6c:密封树脂的侧面
7:树脂密封模具/模具
7a:下模具凸部
7b:空腔底面
8:填锡
9:引线框架框
10:切口部
10a:槽状的切口部
11:半导体装置
11a:单元部
12:切断槽
13:间隙
20:统一密封块
20a:边界线
20b:边界线
121:裸片垫
122:引线
130:密封树脂
170:半导体元件
171:接合线
180:密封用树脂
h1:外引线部的厚度
h2:内引线部的厚度
θ1:弯折角度
θ2:弯折角度
具体实施方式
以下,使用附图对本发明的实施方式的半导体装置进行说明。
(第1实施方式)
图1(a)是第1实施方式的半导体装置的剖面图,图1(b)是侧面图。
如图1(a)所示,利用裸片附着剂3接合搭载于裸片垫2上的半导体芯片4经由接合线5而与引线1的内引线部1a的上表面。引线1包含水平设置的外引线部1c、以自外引线部1c延伸上升的方式设置的引线脚部1b及自引线脚部1b延伸并与外引线部1c平行设置的内引线部1a。即,引线1为利用倾斜形状或垂直形状的引线脚部1b将平行设置的内引线部1a与外引线部1c连结的构成,平面视时,外引线部1c位于较内引线部1a更靠半导体装置11的内侧。
而且,裸片垫2、半导体芯片4、接合线5及引线1的一部分被密封树脂6密封。外引线部的底面1e与密封树脂6的底面形成同一面,且自密封树脂6露出。另外,外引线部的外侧面1h与引线脚部的外侧面1g也自密封树脂6露出。另外,作为密封树脂6的一部分的支持树脂部6a与内引线部的底面1d相接。而且,由支持树脂部的底面6b、外引线部的外侧面1h及引线脚部的外侧面1g包围的区域成为无密封树脂6的切口部10,支持树脂部的底面6b、外引线部的外侧面1h及引线脚部的外侧面1g直接定义切口部10的形状。另外,内引线部的外侧面1f也自密封树脂6露出。此时,成为如下形状:密封树脂的侧面6c与内引线部的外侧面1f形成同一面,或内引线部的外侧面1f相对于密封树脂的侧面6c而稍微凹陷。
引线1具有两处弯折部。第一个弯折部为外引线部1c与引线脚部1b的边界,两者所形成的角度θ1为90°~140°,第二个弯折部为引线脚部1b与内引线部1a的边界,两者所形成的角度θ2为90°~140°。弯折角度θ1与弯折角度θ2位于平行线的错角的位置,始终为相等的角度。另外,虽未图示,但在外引线部的底面1e及外引线部的外侧面1h与引线脚部的外侧面1g被覆有镀层膜,从而使封装时的接合良好。
图1(b)为自图1(a)的侧方观察的侧面图。在一面露出有3根引线1,且为相反的面的引线也合计在内具有6根引线1的半导体装置11。关于引线1的根数,也有在裸片垫的两侧的对称位置配置2根、4根、8根的情况。外引线部1c的底面露出于密封树脂6的底面,在密封树脂6的侧面,引线脚部1b与内引线部1a的一部分也自密封树脂6露出。而且,在内引线部1a的底面,不仅形成作为密封树脂6的一部分的支持树脂部6a,并且其周围被密封树脂6覆盖,从而防止引线1自密封树脂6脱落。先前的半导体装置中,通过设置用以防止引线脱落的薄壁的檐部来防止自密封树脂的脱落,但本发明的实施方式的半导体装置中,可不设置檐部而实现脱落防止。
图2(a)、图2(b)、图2(c)及图3(a)、图3(b)、图3(c)是表示第1实施方式的半导体装置的制造方法的工序剖面图。
首先,如图2(a)所示,准备引线框架至少包含裸片垫2与引线1且经成形的引线框架。引线1以将所邻接的引线1连接而成的形状形成上底短于下底的等腰梯形的形状,位于梯形的上底的部分相当于内引线部1a,位于梯形的脚部的部分相当于引线脚部1b。而且,自引线脚部1b的下方向外侧延伸的水平部分为外引线部1c。此外,虽图示为裸片垫2的高度位置与内引线部1a的高度位置相同,但并不限于此。
继而,如图2(b)所示,在裸片垫2上经由银糊等裸片附着剂3而接合半导体芯片4。而且,经由接合线5而将半导体芯片4的表面的电极垫与内引线部1a电性连接。在梯形形状的一个引线1上,自左右两侧的半导体芯片4这两者连接至少2根接合线。
继而,如图2(c)所示,将引线框架设置于可统一密封多个半导体芯片4的具有大面积空腔的模具7上。模具7包含上下两个模具7,在下模具的上表面设置有以规定的间隔配置的下模具凸部7a,下模具凸部7a的配置间隔与引线1和所邻接的引线1的间隔相同,以引线1嵌合于下模具凸部7a上的方式设置。引线1的外引线部1c的底面与空腔底面7b接触,引线脚部1b与外引线部1c的侧面和下模具凸部7a的倾斜的侧面密接接触。另外,下模具凸部7a的上表面为平面,且在所述上表面与内引线部1a的底面之间形成有间隙13。
如图3(a)所示,在将引线框架设置于模具7上后,通过统一树脂密封而使树脂流入至模具7的空腔内并进行硬化,从而形成统一密封块20。密封树脂6进入下模具凸部7a的上表面与内引线部1a的底面的间隙13中而形成支持树脂部6a。
如图3(b)所示,树脂硬化后,将形成有密封树脂6的引线框架自模具7脱模。统一树脂密封后的引线框架沿设置于模具7的下模具凸部7a的形状而形成缺口部10。支持树脂部6a利用密封树脂6a覆盖引线脚部1b的上部,形成于支持树脂部6a的下方的切口部10使引线脚部1b的下部的表面自密封树脂6露出。
图4是表示与图3(b)对应的第1实施方式的半导体装置的制造方法的工序底面图。统一密封块20包含由引线框架框9包围的密封树脂6,在密封树脂6的背面设置有长的槽状的切口部10a。所图示的边界线20a、边界线20b表示之后切断时的边界,一边界线20a沿槽状的切口部10a设置,另一边界线20b以横切槽状的切口部10a与密封树脂6的方式设置。由边界线20a、边界线20b划分的单元部11a在之后成为半导体装置。未图示的引线沿无密封树脂6的槽状的切口部10a露出设置。
关于统一密封块20,由于是在薄且大的范围内同时进行树脂密封,因此树脂硬化后的引线框架因树脂的收缩而大幅翘曲。产生了大幅翘曲的引线框架并不平坦,因此难以投入至以后的组装工序中,必须进行翘曲的矫正。相对于此,在本发明的第1实施方式的半导体装置的制造方法中的统一密封块20的情况下,通过在引线框架的一方向上反复形成多个长的槽状的切口部10a,统一密封块20的收缩被槽状的切口部10a分割,从而可缓和树脂硬化后的引线框架的翘曲。
而且,如图3(c)所示,使用切割刀片自统一密封块的上表面切断至支持树脂部6a为止,从而单片化成半导体装置11。有时因切割刀片而在内引线部1a的切断面附近产生金属毛边,其成为与所邻接的引线1的短路的原因,在此种情况下,作为后处理,可进行蚀刻处理。在引线1的材料为铜时,作为蚀刻液,只要使用硫酸/过氧化氢溶液或氯化铁水溶液即可。通过使用这些蚀刻液,可不蚀刻密封树脂6地选择性蚀刻铜。
图5是第1实施方式的半导体装置的封装剖面图。若将半导体装置11焊接于封装基板,则焊料自外引线部的外侧面1h爬至引线脚部的外侧面1g,从而形成填锡,直至到达支持树脂部6a的底面的区域。如此,通过形成大的填锡,从而将半导体装置11良好地接合于封装基板。另外,半导体装置11中,在远离半导体装置11的中心的一侧形成有内引线部1a,经由向内侧倾斜的引线脚部1b而在进一步内侧形成有外引线部1c,因此即便为形成有对于接合而言充分的填锡8的状态,填锡8的外端也不会自半导体装置11大幅突出,而封装面积小于先前。存在图1(a)、图1(b)所示的半导体装置11中的引线的弯折角度θ1、弯折角度θ2越大,封装面积越小的倾向。
(第2实施方式)
图6是第2实施方式的半导体装置的剖面图。
与图1(a)、图1(b)所示的第1实施方式的半导体装置的不同点在于:内引线部1a的厚度h2薄于外引线部1c的厚度h1,且相对于外引线部1c的引线厚度而设为1/2~1/3左右的引线厚度。此种引线1在图2(a)所示的准备经成形的引线框架的工序中,进行引线1的弯折后,通过在上下方向上压制内引线部1a而获得。通过减薄内引线部1a,图3(c)的单片化工序中的金属毛边的产生变少而可削减后处理的蚀刻工序。
如上所述中,内引线部1a的上下的压制是通过一阶段压制加工而对内引线部1a整个面进行,但通过对与利用切割刀片的切断槽12对应的部位进行第二阶段的压制,可进一步减薄内引线部1a自密封树脂6露出的部分,从而可将金属毛边的产生设为微量。
通过依据以上的半导体装置的制造方法,可实现防止引线1自密封树脂6脱落且封装面积小的半导体装置11。另外,由于可缓和经成形的统一密封块20的翘曲,因此可不进行翘曲的矫正地投入至树脂密封工序以后的组装工序中。
本发明的半导体装置可用于可携式玩具、保健商品、可穿戴终端、可携式终端、家电制品等。另外,也可应用于使用环境严苛的车载用途、室外用途。
Claims (10)
1.一种半导体装置,其特征在于,包括:
裸片垫;
半导体芯片,搭载于所述裸片垫上;
引线;及
密封树脂,以使所述引线局部露出的方式将所述裸片垫、所述半导体芯片及所述引线密封;并且
所述引线具有外引线部与经由自所述外引线部延伸设置的引线脚部而抬升的内引线部,
在所述内引线部的底面设置有作为所述密封树脂的一部分的支持树脂部,
在由所述支持树脂部的底面及所述外引线部与所述引线脚部的外侧面包围的区域形成有无所述密封树脂的切口部。
2.根据权利要求1所述的半导体装置,其特征在于:所述内引线部的厚度薄于所述外引线部的厚度。
3.根据权利要求1所述的半导体装置,其特征在于:所述引线脚部相对于所述外引线部的底面垂直设置。
4.根据权利要求2所述的半导体装置,其特征在于:所述引线脚部相对于所述外引线部的底面垂直设置。
5.根据权利要求1所述的半导体装置,其特征在于:所述引线脚部相对于所述外引线部的底面倾斜。
6.根据权利要求2所述的半导体装置,其特征在于:所述引线脚部相对于所述外引线部的底面倾斜。
7.根据权利要求1至6中任一项所述的半导体装置,其特征在于:在所述外引线部的底面与外侧面及所述引线脚部的外侧面设置有镀层膜。
8.一种半导体装置的制造方法,其特征在于包括:
准备具有裸片垫与配置于所述裸片垫的周围的引线的引线框架的工序,所述引线包含外引线部与经由自所述外引线部延伸设置的引线脚部而抬升的内引线部;
准备在与所述引线对应的位置具有下模具凸部的模具的工序;
在所述裸片垫上搭载半导体芯片并将所述半导体芯片与所述引线电性连接的工序;
以所述引线与所述下模具凸部对应的方式进行对位而将所述引线框架设置于所述模具的工序;
在所述模具中进行树脂封入而形成统一密封块的工序;及
将所述统一密封块单片化的工序。
9.根据权利要求8所述的半导体装置的制造方法,其特征在于:在准备所述引线框架的工序中,将所述内引线部减薄。
10.根据权利要求8或9所述的半导体装置的制造方法,其特征在于:在将所述统一密封块单片化的工序后包括对所述引线进行蚀刻的工序。
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CN113968067A (zh) * | 2021-09-18 | 2022-01-25 | 浙江晶科能源有限公司 | 一种高温布垫块以及光伏组件的制造方法 |
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JP2000332163A (ja) * | 1999-05-25 | 2000-11-30 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2001235485A (ja) * | 2000-02-25 | 2001-08-31 | Mitsubishi Electric Corp | 加速度センサ |
JP2002324889A (ja) * | 2001-04-26 | 2002-11-08 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2003309241A (ja) | 2002-04-15 | 2003-10-31 | Dainippon Printing Co Ltd | リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法 |
JP2003309242A (ja) | 2002-04-15 | 2003-10-31 | Dainippon Printing Co Ltd | リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法 |
JP2005244035A (ja) * | 2004-02-27 | 2005-09-08 | Renesas Technology Corp | 半導体装置の実装方法、並びに半導体装置 |
KR20060021744A (ko) * | 2004-09-04 | 2006-03-08 | 삼성테크윈 주식회사 | 리드프레임 및 그 제조방법 |
JP2008016469A (ja) * | 2006-07-03 | 2008-01-24 | Renesas Technology Corp | 半導体装置 |
US8004078B1 (en) * | 2009-03-17 | 2011-08-23 | Amkor Technology, Inc. | Adhesive composition for semiconductor device |
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CN113968067A (zh) * | 2021-09-18 | 2022-01-25 | 浙江晶科能源有限公司 | 一种高温布垫块以及光伏组件的制造方法 |
CN113968067B (zh) * | 2021-09-18 | 2024-05-10 | 浙江晶科能源有限公司 | 一种高温布垫块以及光伏组件的制造方法 |
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