CN110277292B - Medium-low temperature vacuum thermoelectric conversion device and preparation method thereof - Google Patents
Medium-low temperature vacuum thermoelectric conversion device and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a medium-low temperature vacuum thermoelectric conversion device and a preparation method thereof, wherein the medium-low temperature vacuum thermoelectric conversion device comprises a cathode structure and an anode structure; the cathode structure comprises a cathode substrate, a bottom gate electrode, a dielectric film and a cathode electrode which are sequentially stacked, the thickness of the dielectric film is 0.5-10 nm, and a gate voltage is applied between the bottom gate electrode and the cathode electrode; the anode structure comprises an anode electrode and an anode substrate which are arranged in a stacked mode. The cathode structure of the medium-low temperature vacuum thermoelectric conversion device provided by the invention is based on a metal-insulator-metal (MIM) structure, does not need an additional light source, can obtain larger heat emission current at medium-low temperature, realizes vacuum thermoelectric conversion with high output power, and has simple structure and easy preparation. In addition, tunneling electrons in the MIM cathode based on the two-dimensional atomic crystal are directly tunneled, and the electrons lose less energy due to scattering, so that the electron emission efficiency is higher.
Description
Technical Field
The invention relates to the technical field of thermoelectric conversion devices, in particular to a medium-low temperature vacuum thermoelectric conversion device and a preparation method thereof.
Background
The energy crisis is an important issue facing the development of the human society in the twenty-first century. Waste heat utilization is an important approach to solve this problem. The thermoelectric conversion device can generate electric energy by utilizing waste heat, and is favorable for relieving energy crisis. Vacuum thermoelectric devices have a significant advantage in thermoelectric conversion efficiency due to the absence of heat conduction, as compared to solid-state thermoelectric devices.
However, since the conventional vacuum thermoelectric device operates based on thermionic emission of the cathode, which generally requires a high temperature, the device can only provide an effective output power in a high temperature environment. To expand the application range of vacuum thermoelectric devices, it is necessary to lower the operating temperature thereof. In general, the thermal emission temperature can be lowered by lowering the surface work function of the cathode. However, the currently known low work function cathode materials still do not satisfy the conditions (lanthanum hexaboride is a currently known stable low work function material, the thermal emission temperature of which is still greater than 1000K). Another approach is to use light to enhance thermionic emission to increase the thermionic emission current at low temperatures at the cathode. However, this approach requires an additional light source and is not suitable for applications without a light source.
Therefore, it is required to develop a vacuum thermoelectric conversion device having a low operating temperature and requiring no additional light source.
Disclosure of Invention
The invention provides a medium-low temperature vacuum thermoelectric conversion device for overcoming the defects that the working temperature is higher or extra light sources are needed to increase the emission current of a cathode at low temperature in the prior art, the cathode structure of the medium-low temperature vacuum thermoelectric conversion device is based on a metal-insulator-metal structure, no extra light source is needed, larger heat emission current can be obtained at medium-low temperature, high-output vacuum thermoelectric conversion is realized, and the device is simple in structure and easy to prepare.
Another object of the present invention is to provide a method for manufacturing the above low-medium temperature vacuum thermoelectric conversion device.
In order to solve the technical problems, the invention adopts the technical scheme that:
a medium-low temperature vacuum thermoelectric conversion device comprises a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate, a bottom gate electrode, a dielectric film and a cathode electrode which are sequentially stacked, the thickness of the dielectric film is 0.5-10 nm, and a gate voltage is applied between the bottom gate electrode and the cathode electrode;
the anode structure comprises an anode electrode and an anode substrate which are arranged in a stacked mode;
the anode structure is positioned on one side of the cathode electrode of the cathode structure; the cathode structure is positioned on the anode electrode side of the anode structure.
The bottom gate electrode, the dielectric film and the cathode electrode form a metal-insulator-metal structure, referred to as an MIM structure for short.
The working principle is as follows: when the medium-low temperature vacuum thermoelectric conversion device works, the cathode structure is arranged at the hot end, the anode structure is arranged at the cold end, and a certain negative voltage is applied between the bottom gate electrode and the cathode electrode of the cathode structure to serve as a gate voltage. The present invention uses the MIM structure for the thermoelectric conversion device for the first time. The medium-low temperature vacuum thermoelectric conversion device utilizes the MIM structure on the cathode substrate to generate high-energy field-induced thermoelectrons, thereby obtaining enhanced heat emission current at medium-low temperature and improving thermoelectric output power. More thermally emitted electrons can absorb more energy from the heat source, so that the device structure can realize vacuum thermoelectric conversion with high output power at medium and low temperature.
In conclusion, the cathode structure of the medium-low temperature vacuum thermoelectric conversion device is based on a metal-insulator-metal structure, does not need an additional light source, can obtain a larger heat emission current at medium-low temperature, realizes vacuum thermoelectric conversion with high output power, and has a simple structure and easy preparation.
Preferably, the dielectric film is composed of one or more of boron nitride, silicon dioxide, aluminum oxide, or hafnium oxide.
More preferably, the dielectric film is composed of hexagonal boron nitride.
Preferably, the dielectric film has a thickness of 5 nm.
Preferably, the cathode substrate is an insulating substrate.
Preferably, the cathode substrate is made of one or more of glass, ceramic, a silicon wafer with an insulating layer plated on the surface, and metal molybdenum or metal tungsten.
Preferably, the bottom gate electrode is made of graphene and/or a first metal material; the first metal material is one or the combination of more than two of chromium, copper, tungsten or molybdenum.
Preferably, the bottom gate electrode has a thickness of 100nm or less.
Preferably, the cathode electrode is composed of graphene and/or a second metal material; the second metal material is one or the combination of more than two of gold, copper, tungsten or chromium.
More preferably, the cathode electrode is composed of graphene.
Preferably, the thickness of the cathode electrode is 10nm or less.
More preferably, the thickness of the cathode electrode is a monoatomic layer thickness.
The cathode employing the MIM structure described above may be referred to as an MIM cathode.
In order to realize sustainable use of the medium-low temperature vacuum thermoelectric conversion device, the thermoelectric output power of the medium-low temperature vacuum thermoelectric conversion device needs to be larger than the driving power of the MIM cathode. Therefore, tunneling electrons in the MIM cathode need to tunnel directly through the dielectric film and the cathode electrode. In view of ballistic transport of electrons in two-dimensional atomic crystals, the dielectric film may preferably be formed using two-dimensional atomic crystals such as hexagonal boron nitride, and the cathode electrode may preferably be formed using two-dimensional atomic crystals such as graphene, in order to realize the above-described MIM cathode for direct tunneling.
Tunneling electrons in the MIM cathode based on the two-dimensional atomic crystal are directly tunneled, and the electrons lose less energy due to scattering, so that the MIM cathode has higher electron emission efficiency.
Therefore, preferably, the dielectric film is composed of hexagonal boron nitride, and the cathode electrode is composed of graphene.
Preferably, the anode substrate is made of one or more of glass, ceramic, silicon wafer, and metal plate.
Preferably, the metal plate is one or a combination of two or more of copper, stainless steel or tungsten.
The anode electrode may be a low work function material. Preferably, the anode electrode is graphene and/or lanthanum hexaboride.
The invention also provides a preparation method of the medium-low temperature vacuum thermoelectric conversion device, which comprises the following steps:
s1, preparing a cathode substrate and an anode substrate;
s2, preparing a bottom gate electrode on the cathode substrate;
s3, preparing a dielectric film on the bottom gate electrode;
s4, preparing a cathode electrode on the dielectric film;
and S5, preparing an anode electrode on the anode substrate.
The specific preparation method is the prior art and can be obtained by routine selection of the technical personnel according to the prior art.
Preferably, step s1. includes the step of cleaning the cathode substrate and the anode substrate.
Compared with the prior art, the invention has the beneficial effects that:
the cathode structure of the medium-low temperature vacuum thermoelectric conversion device provided by the invention is based on a metal-insulator-metal structure, does not need an additional light source, can obtain larger heat emission current at medium-low temperature, realizes vacuum thermoelectric conversion with high output power, and has the advantages of simple structure and easy preparation.
In addition, when the dielectric film is made of hexagonal boron nitride and the cathode electrode is made of graphene, the two-dimensional atomic crystal-based MIM cathode is obtained, tunneling electrons in the two-dimensional atomic crystal-based MIM cathode are directly tunneled, energy loss of the electrons due to scattering is small, and the two-dimensional atomic crystal-based MIM cathode has higher electron emission efficiency.
Drawings
Fig. 1 is a schematic structural view of a medium-low temperature vacuum thermoelectric conversion device according to the present invention. Fig. 1(a) is a front view of the cathode structure and the anode structure, and fig. 1(b) is a left side view of the cathode structure and the anode structure. The "90-degree rotation" means that the device is rotated 90 ° in the horizontal direction, and the view is changed from fig. 1(a) to fig. 1 (b).
Fig. 2 is a schematic view of a conventional vacuum thermoelectric conversion device. FIG. 2 is obtained in accordance with the prior art references (Khalid K AA, Leong T J, Mohamed K. review on thermal Energy Converters [ J ]. IEEE Transactions on Electron Devices,2016,63(6): 2231-.
Fig. 3 is a schematic view of a method for producing a medium-low temperature vacuum thermoelectric conversion device according to embodiment 2 of the present invention. Fig. 3(b) and 3(c) show different views of the same structure, fig. 3(b) is a front view, and fig. 3(c) is a left side view. The "90 degree rotation" means that the device is rotated 90 degrees in the horizontal direction, and the view is changed from fig. 3(b) to fig. 3 (c).
Fig. 4 is a simulation calculation result of maximum thermoelectric conversion efficiency and maximum output power density of the medium-low temperature vacuum thermoelectric device of the present invention and the conventional vacuum thermoelectric device at different cathode temperatures. Wherein the solid and dashed lines represent the results of the present invention and conventional devices, respectively.
Fig. 5 is a simulation calculation result of the maximum thermoelectric conversion efficiency and the output power density of the medium-low temperature vacuum thermoelectric device of the present invention under different MIM cathode band structures. Among them, fig. 5(a) is the maximum thermoelectric conversion efficiency; fig. 5(b) shows the maximum output power density.
In fig. 1 to 3, 1 is a cathode substrate, 2 is a bottom gate electrode, 3 is a dielectric film, 4 is a cathode electrode, 5 is an anode substrate, and 6 is an anode electrode.
Detailed Description
The present invention will be further described with reference to the following embodiments.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, this is for convenience of description and simplicity of description, and does not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore the terms describing the positional relationships in the drawings are for illustrative purposes only and should not be construed as limiting the patent.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are used primarily for distinguishing between different devices, elements, or components (the specific species and configuration may be the same or different), and are not intended to indicate or imply the relative importance of the indicated devices, elements, or components, but are not to be construed as indicating or implying relative importance.
The raw materials in the examples are all commercially available;
reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
A medium-low temperature vacuum thermoelectric conversion device, as shown in fig. 1, includes a cathode structure and an anode structure. The cathode structure comprises a cathode substrate 1, a bottom gate electrode 2, a dielectric film 3 and a cathode electrode 4 which are sequentially stacked. A gate voltage is applied between the bottom gate electrode 2 and the cathode electrode 4. The anode structure includes an anode electrode 6 and an anode substrate 5 which are stacked. The anode structure is positioned on one side of the cathode electrode 4 of the cathode structure; the cathode structure is located on the anode electrode 6 side of the anode structure.
Fig. 2 is a schematic view showing the structure of a conventional vacuum thermoelectric conversion device. The basic structure of the device comprises a cathode substrate 1, a cathode electrode 4, an anode substrate 5 and an anode electrode 6.
When the two devices shown in fig. 1 and fig. 2 work normally, the cathode substrate and the anode substrate need to be respectively arranged at the hot end and the cold end, and power is output between the cathode and the anode. Unlike conventional vacuum thermoelectric devices, the medium-low temperature vacuum thermoelectric conversion device of the present invention requires a certain negative voltage to be applied between the bottom gate electrode and the cathode electrode to generate high-energy field-induced thermionic electrons.
(1) The results of the simulation calculations based on the maximum thermoelectric conversion efficiency and the maximum output power density of the medium and low temperature vacuum thermoelectric conversion device of fig. 1 and the conventional vacuum thermoelectric conversion device of fig. 2 were compared.
The simulation calculations were performed in MATLAB. In the calculation program, the conventional vacuum thermoelectric conversion efficiency η0And output power density P0Is obtained by the following formula which is given by,
P0＝(Jc-Ja)(Φc-Φa)/e
wherein, JcAnd JaIs the thermal emission current density, T, of the cathode and anodecAnd TaAs cathode and anode temperatures, phicAnd phiaIs a cathode and an anodeThe surface work function of the pole, e is the electron electric quantity, and k is the Boltzmann constant.
Since the MIM cathode-based vacuum thermoelectric device of the present invention requires additional input of electric energy to drive the MIM cathode, its thermoelectric conversion efficiency ηFTECAnd output power density PFTECIs obtained by the following formula which is given by,
PFTEC＝(JFTE-Ja)(Φc-Φa)/e-JTFNV0
wherein, JFTEThermal emission current density, V, for MIM cathode0Is the drive voltage of the MIM cathode, JTFNTunneling current density to drive MIM cathode, JTFNV0Is the drive power density of the MIM cathode.
Considering JTFNContact barrier Φ to dielectric film thickness t, gate and dielectric film in MIM cathode0And a driving voltage V0In connection with this, the calculation formula thereof can be expressed as,
wherein F ═ V0/rt is the electric field strength in the dielectric film,ris the relative dielectric constant of the dielectric film, m is the electron effective mass, and h is the Planck constant.
On the other hand, the current density J can only be generated when the electron energy in the cathode is larger than its surface barrierFTEAnd therefore, the first and second electrodes are,
wherein the vacuum level is set to zero, and N (E) is the energy distribution of electrons at the cathode. Consider that electrons in a MIM cathode can tunnel directly to trueNull, n (e) ═ jTFN(E-eV0-Φ0+Φc) And j isTFNIs JTFNElectron energy distribution of (2).
Setting the dielectric film in the device of FIG. 1 as 5nm thick hexagonal boron nitride, the contact barrier phi of the bottom gate electrode and silicon dioxide01.5eV, the temperature of the cold side of the anode was 300K, and the gate voltage, cathode and anode work functions were calculated in the ranges of 0 to-10V, 2.5 to 5.5eV and 0 to 5.5eV, respectively, the maximum extremes of thermoelectric conversion efficiency and output power density of the device as a function of cathode temperature (600 to 1200K). It is to be noted that the maximum limit points of the thermoelectric conversion efficiency and the output power density can be simultaneously obtained under the same conditions. The solid and dashed lines in fig. 4 represent simulation results of maximum thermoelectric conversion efficiency and output power density of the device of the present invention and the conventional device, respectively, at different cathode work functions. It can be seen that the medium-low temperature vacuum thermoelectric device of the present invention is capable of producing output power densities higher than ten orders of magnitude, although the conversion efficiency is more than half of the reduction compared to the conventional vacuum thermoelectric conversion device. The enhancement is more pronounced at low temperatures. Therefore, the vacuum thermoelectric conversion device based on the direct tunneling MIM cathode can realize effective vacuum thermoelectric conversion at medium and low temperature.
(2) Based on the results of simulation calculation of the maximum thermoelectric conversion efficiency and output power density of the medium-low temperature vacuum thermoelectric conversion device of fig. 1 in relation to the band structure of the MIM cathode.
The same calculation procedure as that in fig. 4 was adopted, the cathode temperature was fixed at 700K, the anode temperature was fixed at 300K, and the relationship between the hexagonal boron nitride films of different thicknesses and the contact barriers of different MIM cathodes on the maximum thermoelectric conversion efficiency and the output power density of the device was numerically calculated. Fig. 5a and 5b correspond to the results of conversion efficiency and output power density, respectively. It can be seen that as the thickness of the hexagonal boron nitride and its barrier contact with the bottom gate increase, the maximum thermoelectric conversion efficiency increases and the output power density decreases. Taking the waste heat utilization in a four-cylinder automobile as an example, to obtain an output power of 1kW or more, thermoelectricity is requiredThe output power density of the device is more than 12500W/m2. By proper energy band design of the MIM cathode, when the thickness of hexagonal boron nitride is 9nm, the contact potential barrier is 1.25eV, the work function of the cathode is 2.5eV, the work function of the anode is 0.5eV, and the grid voltage is-1.5V, the device can output power density of 14000W/m2In the case of (2), a thermoelectric conversion efficiency of 17% (cathode temperature: 700K; anode temperature: 300K) was obtained.
Example 2
A method for preparing a medium-low temperature vacuum thermoelectric conversion device, as shown in FIG. 3, firstly preparing a silicon wafer with silicon dioxide grown on the surface as a cathode substrate 1 (FIG. 3 a); then depositing a molybdenum film thereon as a bottom gate electrode 2 (fig. 3b and 3 c); then preparing a 5nm thick hexagonal boron nitride dielectric film 3 on the bottom gate electrode (fig. 3 d); finally, a graphene cathode electrode 4 is prepared on the dielectric film (fig. 3 e). In the preparation of the cathode, a region where the graphene electrode does not overlap with the bottom gate electrode in the vertical direction needs to be ensured for leading.
The fabrication of MIM cathodes based on other novel low dimensional nanomaterials according to the invention can be performed according to the basic steps of example 2.
It is to be noted that the structure of the middle and low temperature vacuum thermoelectric conversion device in fig. 1 is not limited to only a single structure shown in the figure, and may be applied in series between a plurality of structures to increase the output voltage.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. It will be apparent to those skilled in the art that other variations and modifications can be made on the basis of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A medium-low temperature vacuum thermoelectric conversion device is characterized by comprising a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate (1), a bottom gate electrode (2), a dielectric film (3) and a cathode electrode (4) which are sequentially stacked, wherein the thickness of the dielectric film (3) is 0.5-10 nm, a gate voltage is applied between the bottom gate electrode (2) and the cathode electrode (4), and the voltage direction is from the cathode electrode to the bottom gate electrode;
the anode structure comprises an anode electrode (6) and an anode substrate (5) which are arranged in a stacked mode;
the anode structure is positioned on one side of a cathode electrode (4) of the cathode structure; the cathode structure is located on the anode electrode (6) side of the anode structure.
2. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the dielectric thin film (3) is composed of one or more of boron nitride, silicon dioxide, aluminum oxide, or hafnium dioxide.
3. The medium-low temperature vacuum thermoelectric conversion device according to claim 2, wherein the dielectric thin film (3) is composed of hexagonal boron nitride.
4. The medium-low temperature vacuum thermoelectric conversion device according to any one of claims 1 to 3, wherein the thickness of the dielectric thin film (3) is 5 nm.
5. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the cathode substrate (1) is composed of one or more of glass, ceramic, or silicon wafer with an insulating layer plated on the surface, metal molybdenum, and metal tungsten.
6. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the bottom gate electrode (2) is composed of graphene and/or a first metal material; the first metal material is one or the combination of more than two of chromium, copper, tungsten or molybdenum.
7. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the cathode electrode (4) is composed of graphene and/or a second metal material; the second metal material is one or the combination of more than two of gold, copper, tungsten or chromium.
8. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the anode substrate (5) is composed of one or more than two of glass, ceramic, silicon wafer, or metal plate.
9. The medium-low temperature vacuum thermoelectric conversion device according to claim 1, wherein the anode electrode (6) is graphene and/or lanthanum hexaboride.
10. The method for producing a medium-low temperature vacuum thermoelectric conversion device according to any one of claims 1 to 9, characterized by comprising the steps of:
s1, preparing a cathode substrate and an anode substrate;
s2, preparing a bottom gate electrode on the cathode substrate;
s3, preparing a dielectric film on the bottom gate electrode;
s4, preparing a cathode electrode on the dielectric film;
and S5, preparing an anode electrode on the anode substrate.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB961004A (en) * | 1962-03-22 | 1964-06-17 | Siemens Ag | A thermionic converter |
| US4281280A (en) * | 1978-12-18 | 1981-07-28 | Richards John A | Thermal electric converter |
| JP2006319119A (en) * | 2005-05-12 | 2006-11-24 | Daikin Ind Ltd | Thermoelectric module |
| RU2334303C1 (en) * | 2007-02-08 | 2008-09-20 | Общество с ограниченной ответственностью "Экогенерация" | Thermionic converter for generation of alternatic current |
| CN101471210A (en) * | 2007-12-29 | 2009-07-01 | 清华大学 | Thermoelectron source |
| CN103456581A (en) * | 2013-09-10 | 2013-12-18 | 中国科学院深圳先进技术研究院 | Carbon nanometer tube field emitting cathode and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10186650B2 (en) * | 2017-05-02 | 2019-01-22 | Spark Thermonics, Inc. | System and method for work function reduction and thermionic energy conversion |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB961004A (en) * | 1962-03-22 | 1964-06-17 | Siemens Ag | A thermionic converter |
| US4281280A (en) * | 1978-12-18 | 1981-07-28 | Richards John A | Thermal electric converter |
| JP2006319119A (en) * | 2005-05-12 | 2006-11-24 | Daikin Ind Ltd | Thermoelectric module |
| RU2334303C1 (en) * | 2007-02-08 | 2008-09-20 | Общество с ограниченной ответственностью "Экогенерация" | Thermionic converter for generation of alternatic current |
| CN101471210A (en) * | 2007-12-29 | 2009-07-01 | 清华大学 | Thermoelectron source |
| CN103456581A (en) * | 2013-09-10 | 2013-12-18 | 中国科学院深圳先进技术研究院 | Carbon nanometer tube field emitting cathode and manufacturing method thereof |
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