CN1102540C - Silicon photowave guide material on glass and its preparation - Google Patents
Silicon photowave guide material on glass and its preparation Download PDFInfo
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- CN1102540C CN1102540C CN00115581A CN00115581A CN1102540C CN 1102540 C CN1102540 C CN 1102540C CN 00115581 A CN00115581 A CN 00115581A CN 00115581 A CN00115581 A CN 00115581A CN 1102540 C CN1102540 C CN 1102540C
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Abstract
The present invention relates to a silicon optical waveguide material on glass and a making method thereof. The material is an optical waveguide material which uses glass as a substrate, uses silicon as a waveguide layer and uses glass or glass silicon monoxide as a limiting layer. The making method comprises the following steps: baking a polished surface of a silicon slice or a silica surface of a silicon slice with a silica layer and a polished surface of a glass slice after conventional washing; bonding the glass slice and the silicon slice or the silica surface of the silicon slice; thinning the silicon slice to desired thickness. The material and the making method thereof have the advantages of good limiting effect owing to directly using the glass substrate as the limiting layer, no high-temperature technology during the making process, visual bonding effect and requirement simplification to subsequent process equipment.
Description
The present invention relates to silicon optical waveguide material, particularly about silicon optical waveguide material on glass and preparation method thereof.
The fast development of opticfiber communication has proposed more and more higher requirement to opto-electronic device, adapts therewith, and the basic theories of semiconductor optical waveguide is ripe day by day, and a correlation technique difficult problem progressively solves.Silicon materials technical maturity in order to utilize cheap, the making and the application of silica-based optical waveguides are subject to people's attention.According to Light Wave Guide Theory, silica-based optical waveguides is that the material (limiting layer) of silicon (ducting layer) with other low-refraction combined, be processed into the ridge waveguide of ridge height about 8 microns by semiconductor technology, the infrared light of going up the 1.3-1.6 micron wave length that adopts of communicating by letter so just may be limited in the silicon layer with single mode low-loss ground propagation.Present silica-based optical waveguides adopts silicon on the insulation layer usually, and (Sillicon-On-Insulator, SOI) material is made.
Silicon materials on the so-called insulation layer are meant generally that on body silicon layer of oxide layer is arranged, and the material of one deck silicon is arranged on zone of oxidation again, are low power consumption electron device exploitation and composition.Silicon materials on the insulation layer are to be substrate with body silicon when the optical waveguide material, and silicon oxide is a limiting layer, and its upper silicon layer is device layer (ducting layer).Silicon materials on the at present commercially available insulation layer that is applied to optical waveguides mainly contain the Si direct bonding type, and (Sillicon-Direct-Bonding is SDB) with notes oxygen isolated form (Separation-by-Implanted-Oxygen, SIMOX) two big classes.Wherein, the silicon materials on the Si direct bonding type insulation layer are with after two monocrystalline silicon piece thermooxidizings, are being bonded together more than 800 degrees centigrade, then will wherein a slice wafer thinning to be to desired thickness, and another sheet silicon chip is as substrate.Silicon materials on the Si direct bonding type insulation layer have the silicon layer than compact oxide and less defective, but as optical waveguide material, its high-temperature technology has limited opto-electronic device and made in earlier stage, as prefabricated electrode etc.The silicon materials of annotating on the oxygen isolated form insulation layer are to inject silicon substrate with high-energy oxonium ion (150-300 kiloelectron volt), and ion current density is relevant with the injection energy, is 2.6 * 10 when 150 kiloelectron volts generally
18/ square centimeter is 1.3 * 10 when 300 kiloelectron volts
18/ square centimeter.Sample has just formed the silicon materials on the insulation layer 1150 degrees centigrade of annealing 2 hours after injecting.Annotate the oxygen isolated form and have the controllability of homogeneity and thickness preferably.But because the oxygen that injects is Gaussian distribution, make silicon-silicon oxide interface fuzzy, the index distribution that can not obtain suddenling change has influenced the restriction of silicon oxide layer.In addition, the silicon layer of annotating the silicon materials top on the oxygen isolated form insulation layer is thinner, need be at top epitaxy one deck silicon, but because when ion implantation, surface silicon is introduced defective by sputter, only anneals under sufficiently high temperature, could eliminate defective, obtain silicon epitaxial layers than good quality.Generally speaking, the silicon materials on these two kinds of insulation layers all need high-temperature technology, processing requirement height, equipment complexity.In addition, the ducting layer of the silicon materials on these two kinds of insulation layers is all thicker and limiting layer is thinner.The limiting layer of Si direct bonding type is in micron dimension, and the limiting layer of annotating the oxygen isolated form is generally less than 0.5 micron.Thicker ducting layer can not satisfy the single mode operation condition; Thin limiting layer is unfavorable for the restriction to light field, has increased transmission loss.
The objective of the invention is, proposing a kind of in order to overcome above-mentioned difficulties is the silicon waveguide material structure on glass and the corresponding making method thereof of limiting layer with glass.
To the effect that of the present invention: a kind of silicon optical waveguide material on glass, it is characterized in that it is is substrate with glass, silicon is ducting layer, glass limits the optical waveguide material of layer.Said limiting layer is a glass---silicon oxide layer; Concrete making step is as follows: (1) silicon wafer polishing face and sheet glass polished surface are dried after routine is cleaned; (2) on the electrostatic bonding machine with silicon chip and sheet glass bonding, 300 degrees centigrade-400 degrees centigrade of bonding temperatures, 800 volts-1600 volts of bonding voltages; (3) behind the bonding silicon chip is carried out reduction processing, reach desired thickness.
The making method of silicon optical waveguide material on glass is characterized in that its making step is: (1) silicon chip carries out high temperature oxidation process earlier, forms the silicon chip with one deck silicon oxide; (2) have the oxidation silicon face of silicon chip of silicon oxide layer and sheet glass polished surface after routine is cleaned, oven dry; (3) on the electrostatic bonding machine, will have the silicon chip and the sheet glass bonding of silicon oxide layer, 300 degrees centigrade-400 degrees centigrade of bonding temperatures, 800 volts-1600 volts of bonding voltages; (4) silicon chip is carried out attenuate, reach desired thickness.Said silicon chip carries out the method for attenuate to be handled, and can be the anisotropic etchant corrosion, also can be mechanical polishing, or chemical rightenning, or galvanic corrosion or its combined method.
The present invention's silicon optical waveguide material structure and technological advantage on glass are as follows:
1, special thining method can satisfy the requirement of optical waveguide material low-loss propagation guaranteeing to obtain surface finish preferably on the thin silicon wafer thickness basis.
2, glass substrate is directly as limiting layer, and restriction effect is good.According to Light Wave Guide Theory, limiting layer is thick more, and the loss of waveguide in limiting layer is more little.The silicon oxide limiting layer of the silicon materials on the Si direct bonding type insulation layer is to make of the method for thermooxidizing, generally in 2 microns.The silicon oxide limiting layer of annotating the silicon materials on the oxygen isolated form insulation layer is formed by ion implantation, and thickness is generally less than 0.4 micron.The limiting layer of the present invention's silicon optical waveguide material on glass is glass substrate or silicon oxide and glass substrate, and limiting layer thickness is the thickness of glass substrate thickness or silicon oxide and glass substrate, and its thickness is generally the hundreds of micron.Therefore, silicon optical waveguide material on glass has better restriction effect.
3, there is not high-temperature technology in the making method.The making of the silicon materials on the Si direct bonding type insulation layer need be carried out thermooxidizing and silicon-silicon bonding, and technological temperature reaches more than 1000 degrees centigrade.The present invention only need carry out glass-silicon (silicon oxide) bonding, and technological temperature is at 300-400 degree centigrade, far below silicon-silicon bonding.Owing to there is not a high-temperature technology, can be on glass and silicon the prefabricated metal electrode, satisfy some particular requirement.As when making modulator, can utilize prefabricated electrode under identical voltage, to increase modulated electric fields intensity, improve modulation efficiency.
4, the bonding visual result reduces the subsequent technique equipment requirements.Because glass is to visible transparent, the present invention's bonding visual result is easily looked into.And in silicon-silicon bonding technology,, can only observe the bonding result with infrared method because silicon is opaque to visible light, increased the difficulty that detects.In addition, because glass transparent, follow-up technologies such as double-sided overlay can be carried out on conventional double face photoetching machine, also are easy to carry out the figure alignment of bonding face again during bonding.
The invention will be further described below in conjunction with drawings and Examples.
One of Fig. 1 silicon-on-glass optical waveguide material structural representation.
Two structural representations of Fig. 2 silicon-on-glass optical waveguide material.
The silicon-on-glass optical waveguide material of Fig. 1 is to be substrate with glass, and glass is limiting layer, and silicon is the optical waveguide material of ducting layer, and the material of Fig. 2 is to be substrate with glass, and glass-silicon oxide is a limiting layer, and silicon is the optical waveguide material of ducting layer.
Make the method steps of above-mentioned materials, enumerate embodiment now and be illustrated as follows.
Embodiment 1, and glass is the silicon-on-glass optical waveguide material of limiting layer, and making step is as follows:
1, silicon chip is polished,
2, sheet glass is polished,
3, silicon wafer polishing face and sheet glass polished surface are dried after routine is cleaned;
4, on the electrostatic bonding machine, silicon wafer polishing face and sheet glass polished surface are carried out bonding, 380 ℃ of bonding temperatures, being good for and closing voltage is 1200 volts;
5, earlier with 50% potassium hydroxide solution 60 ℃ of corrosion down, stop corrosion in the also surplus 40 microns left and right sides of silicon chip when thick, the method for using mechanical polishing with wafer thinning to desired thickness.
1, silicon chip carries out high temperature oxidation process earlier, forms the silicon chip with one deck silicon oxide;
2, have the oxidation silicon face of silicon chip of silicon oxide and sheet glass polished surface after routine is cleaned, oven dry;
3, will have the silicon chip and the sheet glass bonding of silicon oxide on the electrostatic bonding machine, bonding temperature is 400 ℃, and bonding voltage is 1200 volts;
4, behind the bonding with 50% potassium hydroxide solution 60 ℃ of corrosion, stop corrosion when thick in the also surplus 40 microns left and right sides of silicon chip, with the method for mechanical polishing with wafer thinning to desired thickness.
Claims (5)
1, a kind of silicon optical waveguide material on glass, tool are characterised in that it is is substrate with glass, and silicon is ducting layer, and glass limits the optical waveguide material of layer.
2, silicon optical waveguide material on glass according to claim 1 is characterized in that said limiting layer is a glass---silicon oxide layer.
3, the making method of silicon optical waveguide material on glass according to claim 1 is characterized in that concrete making step is as follows:
(1) silicon wafer polishing face and sheet glass polished surface are dried after routine is cleaned;
(2) on the electrostatic bonding machine with silicon chip and sheet glass bonding, 300 degrees centigrade-400 degrees centigrade of bonding temperatures, 800 volts-1600 volts of bonding voltages;
(3) behind the bonding silicon chip is carried out reduction processing, reach desired thickness.
4, the making method of silicon optical waveguide material on glass according to claim 2 is characterized in that its making step is:
(1) silicon chip carries out high temperature oxidation process earlier, forms the silicon chip with one deck silicon oxide;
(2) have the oxidation silicon face of silicon chip of silicon oxide layer and sheet glass polished surface after routine is cleaned, oven dry;
(3) on the electrostatic bonding machine, will have the silicon chip and the sheet glass bonding of silicon oxide layer, 300 degrees centigrade-400 degrees centigrade of bonding temperatures, 800 volts-1600 volts of bonding voltages;
(4) silicon chip is carried out attenuate, reach desired thickness.
5, according to the making method of claim 3 or 4 described silicon optical waveguide materials on glass, it is characterized in that said silicon chip carries out the method processing of attenuate, can be the anisotropic etchant corrosion, also can be mechanical polishing, or chemical rightenning, or galvanic corrosion or its combined method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00115581A CN1102540C (en) | 2000-04-29 | 2000-04-29 | Silicon photowave guide material on glass and its preparation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00115581A CN1102540C (en) | 2000-04-29 | 2000-04-29 | Silicon photowave guide material on glass and its preparation |
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| Publication Number | Publication Date |
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| CN1274692A CN1274692A (en) | 2000-11-29 |
| CN1102540C true CN1102540C (en) | 2003-03-05 |
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| CN00115581A Expired - Fee Related CN1102540C (en) | 2000-04-29 | 2000-04-29 | Silicon photowave guide material on glass and its preparation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6890450B2 (en) * | 2001-02-02 | 2005-05-10 | Intel Corporation | Method of providing optical quality silicon surface |
| CN100365454C (en) * | 2005-11-14 | 2008-01-30 | 浙江大学 | Preparation method of silicon nanometer film on polymer used for nanometer photon technology |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2167988Y (en) * | 1993-06-15 | 1994-06-08 | 韩鹏 | Crystal-reflecting glass |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2167988Y (en) * | 1993-06-15 | 1994-06-08 | 韩鹏 | Crystal-reflecting glass |
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