CN100365454C - Preparation method of silicon nanometer film on polymer used for nanometer photon technology - Google Patents
Preparation method of silicon nanometer film on polymer used for nanometer photon technology Download PDFInfo
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- CN100365454C CN100365454C CNB2005100615469A CN200510061546A CN100365454C CN 100365454 C CN100365454 C CN 100365454C CN B2005100615469 A CNB2005100615469 A CN B2005100615469A CN 200510061546 A CN200510061546 A CN 200510061546A CN 100365454 C CN100365454 C CN 100365454C
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Abstract
The present invention discloses a preparing method of a silicon nanometer film on a polymer used for a nanometer photon technology. An upper silicon chip of an insulator and a substrate sheet which have the thickness from hundreds of or a plurality of nanometers are cleaned and then dried. One side of the top layer silicon of the upper silicon chip of the insulator is coated with a polymer optical isolating layer which adheres to the substrate sheet. The bottom layer silicon of the upper silicon chip of the insulator after adhesion is removed, and a nanometer film of monocrystalline silicon is obtained. The thickness uniformity of the nanometer film prepared by the present invention is high. The optical lower limiting layer of the material has sufficient thickness for realizing optical isolation, and the development of a silicon photon device with the size in a nanometer grade can be carried out. According to the requirements in an actual device making process, the bonding surface of the upper silicon chip of the insulator and the substrate sheet can be preprocessed, be provided with electrodes, and realize specific patterns, etc. The entire preparing process can only use simple work processes of coating, adhering, wet etching, etc., and thus, the device requirements are reduced. The property of silicon material and the property of polymeric material can be combined for researching and developing relevant nanometer photon devices.
Description
Technical field
The present invention relates to preparation of nanomaterials, particularly relate to silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology.
Background technology
Based on the nano-photon technology of silicon materials is to realize the important technical of the integrated and high-speed optical interconnection of high density photon.Carry out the technical research of silicon nano-photon, the preparation of silicon nano-photon material is the basis.The basic ideas of preparation silicon nano-photon material comprise method and top-down method from bottom to top.Method from bottom to top mainly is to adopt the method for chemically grown, preparation comprises the silicon-based nano photonic material of silicon nanowires, silicon nano belt and nano-tube etc., though this is important developing direction, but at present, on the angle of nano-photon technical requirement, no matter these silicon nano-photon materials are in light-transfer characteristic, physical dimension, or on the device fabrication means, all far can not be used for practical devices and modular research and development.Top-down method is the mainstream technology means of present large-scale production, the microfabrication means that main utilization has grown up.The material that is used for the technical research of silicon nano-photon at present is mainly silicon-on-insulator (SOI:Silicon-on-Insulator) material.Though can be used for the research of silicon nano-photon device to a certain extent based on the silicon-on-insulator material of the quick separation of intelligence (Smart Cut) technology, but because the limited thickness of the oxidation separation layer in the silicon-on-insulator material has limited the size of silicon nanowires, when silicon layer as thin as a wafer the time, can't guarantee the light buffer action.
Summary of the invention
For the restriction of the oxidation separation layer of eliminating the silicon-on-insulator material limited thickness to the technical research of silicon nano-photon, the object of the present invention is to provide silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology, the silicon nanometer film can be used to carry out silicon nano-photon Study on Technology on the prepared polymkeric substance.
The technical solution adopted for the present invention to solve the technical problems is: the step that this method adopts is as follows:
(1) will have hundreds of SOI and substrate slices and clean the back oven dry to the number nano thickness;
(2) coating one layer of polymeric optical confinement layer on top layer silicon one side of SOI, and bonding with substrate slice;
(3) remove the base silicon wafer of the SOI after bonding.
Described substrate slice is glass sheet, piezoid, lithium niobate sheet, silicon chip or polymkeric substance.
The coating method of described polymkeric substance optical confinement layer is whirl coating, spraying process or chemically grown method.
Described SOI and the adhesive bonding method between substrate slice that is coated with the polymkeric substance optical confinement layer is behind coat polymers optical confinement layer on the SOI, directly utilize the adhesion characteristics of polymkeric substance before curing, carry out bonding between SOI and substrate slice, then polymkeric substance is cured.
Described SOI and the adhesive bonding method between substrate slice that is coated with the polymkeric substance optical confinement layer is behind coat polymers optical confinement layer on the SOI, polymkeric substance optical confinement layer to coating is cured earlier, again on the polymkeric substance optical confinement layer or on the substrate slice or on polymkeric substance optical confinement layer and substrate slice, apply layer of adhesive simultaneously, carry out bonding between SOI and substrate slice.
The polymeric material that described polymkeric substance optical confinement layer is adopted is polyimide, polymethyl acrylate or epoxy resin.
In step (3), the method for removing the bottom silicon of the SOI after bonding is dry etching, wet etching or in conjunction with the combined method of polishing, dry etching and wet etching.
Carry out step (3) afterwards, adopting dry etching, perhaps wet etching, or remove the silicon dioxide layer as the oxidation separation layer of SOI in conjunction with the combined method of polishing, dry etching and wet etching.
Carrying out step (1) afterwards and before the polymkeric substance optical confinement layer of step (2) coating, adopt the method for oxidation that the top layer silicon of SOI is carried out attenuate, the one-tenth-value thickness 1/10 of attenuate is determined by needed nanometer film thickness.
Carrying out step (1) afterwards and before the polymkeric substance optical confinement layer of step (2) coating, top layer silicon one side of SOI is made metal electrode or made optical texture.
The beneficial effect that the present invention has is:
1) adopting the top layer silicon of the silicon nano-sized membrane of the present invention's preparation is monocrystalline silicon, and its thickness can be from tens nanometers to the hundreds of nanometer, the thickness evenness height;
2) adopting the silicon nano-sized membrane of the present invention's preparation is as the light lower limit layer with the polymkeric substance optical confinement layer, there is enough thickness can realize the light isolation, can carry out nano-scale silicon photonic device development, this be the conventional silicon-on-insulator sheet material intermediate oxide layer can't guarantee;
3) adopt preparation process of the present invention, can on the surface of SOI, carry out pre-service, electrode is set, realize specific pattern etc. according to the needs in the practical devices manufacturing process, this be directly adopt the silicon-on-insulator sheet material can't carry out;
4) whole process of preparation can only adopt the most basic simple technological processs such as coating, bonding, wet etching, has reduced the requirement to process equipment;
5) can be in conjunction with the characteristic of silicon materials and the characteristic of polymeric material, the nano-photon device that research and development is relevant.
Embodiment
Embodiment 1:
The SOI that adopts a slice to have the thick top layer silicon of 5nm is a substrate slice with the silicon chip, carries out routine and cleans the back oven dry.Adopt the thick thermohardening type polymethyl acrylate of rotary coating method coating one deck 50 μ m layer on the top layer silicon surface of SOI, and the adhesion property of preceding polymethyl acrylate layer is solidified in utilization, directly, put into 350 degrees centigrade and carry out the curing of polymethyl acrylate layer SOI and bonding as the silicon chip of substrate.Bonding and solidify after, to substrate layer in addition paraffin wax cover and protect, more bonding slice, thin piece is put into the potassium hydroxide solution of 40% concentration, erode the bottom silicon of SOI.Slice, thin piece is further put into hydrofluoric acid solution, removes the silicon dioxide layer as the oxidation separation layer of SOI.Finally can prepare with silicon is silicon nano-sized membrane optical confinement layer, that have about 5nm silicon fiml substrate, that the thick polymethyl acrylate layer of 50 μ m is arranged.
Embodiment 2:
The SOI that adopts a slice to have the 250nm top layer silicon is a substrate slice with the glass sheet, carries out routine and cleans the back oven dry.Adopt the thick uv-curing type polymethyl acrylate of rotary coating method coating one deck 20 μ m layer on the top layer silicon surface of SOI, and carry out the curing of polymethyl acrylate layer under the ultraviolet light.Then, again at polymeric surface spin coating one deck epoxy adhesive, with itself and bonding as the glass sheet of substrate.After bonding, the silicon-on-insulator one of bonding slice, thin piece is faced up, place dry etching equipment, etch away the bottom silicon of SOI with dry etching method.Thus, prepare with glass be optical confinement layer substrate, that the thick polymethyl acrylate layer of 20 μ m is arranged, the layer of silicon dioxide layer is still arranged is silicon nano-sized membrane upper limiting layer, that have about 250nm silicon fiml to top layer.
Embodiment 3:
The SOI that adopts a slice to have the 10nm top layer silicon is a substrate slice with the piezoid, carries out routine and cleans the back oven dry.Carry out photoetching and corrosion on the SOI surface, producing width is the silicon nanometer straight line optical texture of 200nm.Adopt the thick thermohardening type polyimide layer of rotary coating method coating one deck 35 μ m on the top layer silicon surface of SOI again, and put into 250 degrees centigrade and carry out polyimide curing.Then, at piezoid surface spin coating one deck epoxy adhesive, with a side of SOI band polymkeric substance and bonding as the piezoid of substrate.After bonding, bonding slice, thin piece silicon-on-insulator is simultaneously ground,, put into the potassium hydroxide solution of 40% concentration, erode the bottom silicon of SOI when silicon layer thickness during at 50-100 μ m.Slice, thin piece is further put into hydrofluoric acid solution, removes the silicon dioxide layer as the oxidation separation layer of SOI.Thus, prepare with the quartz be optical confinement layer substrate, that 35 μ m thick polyimide layers are arranged, have a silicon nanometer straight line material that about 10nm is thick and 200nm is wide.
Embodiment 4:
The SOI that adopts a slice to have the 100nm top layer silicon is a substrate slice with the silicon chip, carries out routine and cleans the back oven dry.Carry out the photoetching and the corrosion of aluminum metal evaporation and electrode on the SOI surface, make the aluminum metal electrode.Adopt the thick uv-curing type epoxy resin layer of rotary coating method coating one deck 20 μ m on the top layer silicon surface of the SOI of having made the aluminum metal electrode again, and the adhesion property of preceding epoxy resin layer is solidified in utilization, direct with SOI and bonding as the silicon chip of substrate, and under ultraviolet light, carry out epoxy resin layer curing.Bonding and solidify after, to substrate layer in addition paraffin wax cover and protect, more bonding slice, thin piece is put into the potassium hydroxide solution of 40% concentration, erode the bottom silicon of SOI.Thus, prepare with silicon be optical confinement layer substrate, that the thick epoxy resin layer of 20 μ m is arranged, top layer still have the layer of silicon dioxide layer be upper limiting layer, have the thick silicon nano-sized membrane of 100nm, also finished simultaneously the preparation of aluminum metal electrode under the silicon nanometer film.
Embodiment 5:
The SOI that adopts a slice to have the 90nm top layer silicon is a substrate slice with the piezoid, carries out routine and cleans the back oven dry.SOI is put into oxidation furnace, carry out wet oxidation under 1050 degrees centigrade, oxidation goes out the oxide layer of 100nm, and making top layer silicon be thinned to has 50nm approximately.Adopt the thick thermohardening type polyimide layer of rotary coating method coating one deck 50 μ m on the top layer silicon surface of SOI again, and put into 250 degrees centigrade and carry out polyimide curing.Then, at piezoid surface spin coating one deck epoxy adhesive, with a side of SOI band polymkeric substance and bonding as the piezoid of substrate.After bonding, will put into the potassium hydroxide solution of 40% concentration on the bonding slice, thin piece insulator, erode the bottom silicon of SOI.Slice, thin piece is further put into hydrofluoric acid solution, removes the silicon dioxide layer as the oxidation separation layer of SOI.Thus, prepare with the quartz be optical confinement layer substrate, that 50 μ m thick polyimide layers are arranged, have a thick silicon nano-sized membrane of about 50nm.
Claims (10)
1. silicon nanometer film preparation method on the polymkeric substance that is used for the nano-photon technology, it is characterized in that: the step that this method adopts is as follows:
(1) will have hundreds of SOI and substrate slices and clean the back oven dry to the number nano thickness;
(2) coating one layer of polymeric optical confinement layer on top layer silicon one side of SOI, and bonding with substrate slice;
(3) remove the bottom silicon of the SOI after bonding.
2. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: described substrate slice is glass sheet, piezoid, lithium niobate sheet, silicon chip or polymer sheet.
3. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: the coating method of described polymkeric substance optical confinement layer is whirl coating, spraying process or chemically grown method.
4. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: described SOI and the adhesive bonding method between substrate slice that is coated with the polymkeric substance optical confinement layer is behind coat polymers optical confinement layer on the SOI, directly utilize the adhesion characteristics of polymkeric substance before curing, carry out bonding between SOI and substrate slice, then polymkeric substance is cured.
5. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: described SOI and the adhesive bonding method between substrate slice that is coated with the polymkeric substance optical confinement layer is behind coat polymers optical confinement layer on the SOI, polymkeric substance optical confinement layer to coating is cured earlier, again on the polymkeric substance optical confinement layer or on the substrate slice or on polymkeric substance optical confinement layer and substrate slice, apply layer of adhesive simultaneously, carry out bonding between SOI and substrate slice.
6. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: the polymeric material that described polymkeric substance optical confinement layer is adopted is polyimide, polymethyl acrylate or epoxy resin.
7. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: in step (3), the method for removing the bottom silicon of the SOI after bonding is dry etching, wet etching or in conjunction with the combined method of polishing, dry etching and wet etching.
8. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: carrying out step (3) afterwards, adopt dry etching, perhaps wet etching, or remove the silicon dioxide layer as the oxidation separation layer of SOI in conjunction with the combined method of polishing, dry etching and wet etching.
9. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that: carrying out step (1) afterwards and before the polymkeric substance optical confinement layer of step (2) coating, adopt the method for oxidation that the top layer silicon of SOI is carried out attenuate, the one-tenth-value thickness 1/10 of attenuate is determined by needed nanometer film thickness.
10. silicon nanometer film preparation method on a kind of polymkeric substance that is used for the nano-photon technology according to claim 1, it is characterized in that:, top layer silicon one side of SOI is made metal electrode or made optical texture carrying out step (1) afterwards and before the polymkeric substance optical confinement layer of step (2) coating.
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| CN1221207A (en) * | 1997-12-26 | 1999-06-30 | 佳能株式会社 | Substrate processing method and apparatus and SOI substrate |
| CN1274692A (en) * | 2000-04-29 | 2000-11-29 | 中国科学院上海冶金研究所 | Silicon photowave guide material on glass and its preparation |
| CN1299519A (en) * | 1998-03-25 | 2001-06-13 | 兰迪·L·希马布库罗 | Method for babricating and electrically addressable silicon-on-sapphire light valve |
| US6387724B1 (en) * | 1999-02-26 | 2002-05-14 | Dynamics Research Corporation | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface |
| US20040102021A1 (en) * | 2001-01-02 | 2004-05-27 | Sawyer William D. | Method for microfabricating structures using silicon-on-insulator material |
| US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
| US20040245634A1 (en) * | 2003-06-06 | 2004-12-09 | Kloster Grant M. | Stacked device underfill and a method of fabrication |
| US20050052725A1 (en) * | 2003-09-04 | 2005-03-10 | Frank Niklaus | Adhesive sacrificial bonding of spatial light modulators |
| CN1693931A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海微***与信息技术研究所 | Method for preparing glass base silicon optical waveguide material |
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2005
- 2005-11-14 CN CNB2005100615469A patent/CN100365454C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1221207A (en) * | 1997-12-26 | 1999-06-30 | 佳能株式会社 | Substrate processing method and apparatus and SOI substrate |
| CN1299519A (en) * | 1998-03-25 | 2001-06-13 | 兰迪·L·希马布库罗 | Method for babricating and electrically addressable silicon-on-sapphire light valve |
| US6387724B1 (en) * | 1999-02-26 | 2002-05-14 | Dynamics Research Corporation | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface |
| CN1274692A (en) * | 2000-04-29 | 2000-11-29 | 中国科学院上海冶金研究所 | Silicon photowave guide material on glass and its preparation |
| US20040102021A1 (en) * | 2001-01-02 | 2004-05-27 | Sawyer William D. | Method for microfabricating structures using silicon-on-insulator material |
| US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
| US20040245634A1 (en) * | 2003-06-06 | 2004-12-09 | Kloster Grant M. | Stacked device underfill and a method of fabrication |
| US20050052725A1 (en) * | 2003-09-04 | 2005-03-10 | Frank Niklaus | Adhesive sacrificial bonding of spatial light modulators |
| CN1693931A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海微***与信息技术研究所 | Method for preparing glass base silicon optical waveguide material |
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