CN110233678A - Chip is handled based on silicon substrate integrated micro photon acceptor - Google Patents
Chip is handled based on silicon substrate integrated micro photon acceptor Download PDFInfo
- Publication number
- CN110233678A CN110233678A CN201910402785.8A CN201910402785A CN110233678A CN 110233678 A CN110233678 A CN 110233678A CN 201910402785 A CN201910402785 A CN 201910402785A CN 110233678 A CN110233678 A CN 110233678A
- Authority
- CN
- China
- Prior art keywords
- signal
- filter
- modulator
- output end
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A kind of silicon substrate integrated micro photon front end receiver processing chip includes Mach once moral intensity modulator, staggeredly comb filter, phase-modulator, restructural bandpass filter, optical delay line and balance photodetector.Wherein by photoswitch, the fine filter based on silicon waveguide stimulated Brillouin scattering effect and micro-loop coupling Mach, once moral broadband filter is constituted restructural bandpass filter.It is selected, is may be implemented to different frequency range fine or wideband filtered by photoswitch.The present invention can be achieved microwave photon front end signal and receive, including across wave band, tunable microwave photon signal processing, microwave photon broadband down coversion, microwave photon local frequency synthesis and Phaseshift controlling, have many advantages, such as that size is small, integrated level is high, low in energy consumption, stability is good, key effect can be played in the processing of microwave photon front end signal, there is important practical application value.
Description
Technical field
The invention belongs to optical signal prosessing fields, especially a kind of to handle chip based on silicon substrate integrated micro photon acceptor.
Background technique
As 5G mobile Internet gradually moves towards to apply, next generation mobile Internet proposes higher want to microwave front-end
It asks, a kind of achievable multiband, restructural microwave front-end become the goal in research of researcher.However, due to 1GHz wave
The electronic component that section and 20~60GHz wave band use is completely different, therefore difficult to realize tunable and restructural across wave band
Microwave signal process, this makes processing frequency range become extremely difficult from 1GHz to the microwave signal of tens GHz.
Last century the nineties are a kind of by traditional microwave technology and new in order to break through the bottleneck of traditional microwave technical field
The new technology that emerging photon technology combines gradually forms, and people are referred to as microwave photon technology.Microwave photon technology is in area of light
The cutting edge technology of microwave signal is handled, its appearance provides new thinking to solve the technical problem of microwave front-end: common
Optical communicating waveband 1550nm at, the bandwidth of optical signal 0.8nm is about 100GHz, this is enough to cover whole microwave bands, thus
It allows and realizes that all band tunable microwave photon signal processing becomes possible.In addition, the delay of ultra-low loss may be implemented in area of light,
This is conducive to the coherent processing of microwave signal.Therefore, it is based on microwave photon technology, broadband, more may be implemented in microwave photon front end
Wave band is tunable and restructural signal processing, so that microwave photon front end is in next generation mobile Internet, software radio etc.
Aspect has highly important application prospect.
However, current research approach is realized that device size is big by discrete device mostly, power consumption is high, leads to itself and reality
Using still there is biggish distance.Then, it is micro- that research, which has the integrated micro photonic system of small size, high stability and low cost,
The development trend of wave photon technology.
Summary of the invention
In view of the above shortcomings of the prior art, in conjunction with the advantage and feature of integrated micro photonic system, the present invention provides one
Kind receives processing chip based on the microwave photon that silicon substrate integrates, and the chip is with size is small, integrated level is high, low in energy consumption, stability
The advantages that high, it can be achieved that the reception of microwave photon front end signal, can play key effect in the processing of microwave photon front end signal, have
There is very high practical application value.
To achieve the goals above, technical solution of the invention is as follows:
A kind of silicon substrate integrated micro photon acceptor processing chip, it is characterized in that, which includes Mach once moral intensity tune
Device, staggeredly comb filter, phase-modulator, restructural bandpass filter, optical delay line and balance photodetector processed, it is described
Mach once moral intensity modulator includes the intensity modulator based on Mach-Zahnder interference device structure, the phase-modulation
Device include an on piece phase-modulator, the restructural bandpass filter include two photoswitches and in the switch between simultaneously
Capable fine filter and broadband filter, the balance photodetector include that an on piece balances photodetector.
The intensity modulator uses the intensity modulator based on Mach once moral structure, utilizes the plasma color of silicon waveguide
Dissipate effect, by changing the alive size of silicon waveguide two sides metal electrodes institute after doping, adjust its two-arm phase official post its
Work allows the modulator to modulate to obtain the upper and lower of suppressed light carrier and equality strength in suppressed carrier operation point
Sideband.
The lower sideband that the staggeredly comb filter can generate a upper device modulation separates, and is divided into two groups of letters
Number output, wherein lower sideband signal enter upper branch, upper side band signal enter lower branch.
The phase-modulator is made of on piece phase-modulator, after which is located at staggeredly comb filter
Upper branch be powered on by changing the silicon waveguide two sides metal electrode after doping using the plasma dispersion effect of silicon waveguide
The size of pressure, thus it is possible to vary the effective refractive index of silicon waveguide realizes the adjusting to lower sideband signal phase in upper branch.
The restructural bandpass filter is by two photoswitches and positioned at the high-precision fine filtering of switch Intermediate parallel connection
Wave device and broadband filter are constituted, which is located at upper branch.In the device, fine filter and width
Band filter parallel arranged realizes optical path selection, when needing to extract narrowband (< 500MHz) microwave signal, switch by photoswitch
Select the first via；When needing to extract broadband (> 500MHz) microwave signal, the second tunnel of switch selection.By this parallel organization,
The a wide range of adjusting that bandwidth may be implemented allows to accurately extract useful letter in the wide-band from L-band to W-waveband
Number.
The fine filter is made of one section of silicon waveguide, can be real based on silicon waveguide stimulated Brillouin scattering effect
The tens megahertzs of filtering of existing bandwidth.
The broadband filter couples a Mach-Zahnder interference device by two micro-ring resonators and constitutes, and is mixed by changing
The alive size of silicon waveguide two sides metal electrode institute after miscellaneous realizes cake resistancet to adjust the resonance wavelength of two micro-loops
Wide and central wavelength adjusting.
The optical delay line is located at lower branch, and the delay to upper side band signal in lower branch may be implemented.After delay
Lower tributary signal will enter subsequent device as local light generation source.The signal of upper branch and lower branch is combined by photo-coupler
Enter further device jointly afterwards.
The described balance photodetector receives the signal light of local the light generation source signal and upper branch of lower branch, can be with
The down coversion for realizing microwave photon signal, obtains intermediate-freuqncy signal, the electric treatment module after being finally output to is handled.
Compared with prior art, the beneficial effects are mainly reflected as follows:
1, device corresponding to all different function modules of the present invention is all integrated on same chip, chip size is small,
Integrated level is high, low in energy consumption, stability is high, compatible with CMOS technology, advantageously reduces cost, is mass produced.
2, the present invention is coupled using the fine filter based on silicon waveguide stimulated Brillouin scattering effect and based on micro-loop
The broadband filter of Mach once moral structure constitutes parallel reconfigurable filter structure, can be utilized respectively fine filter and width
Band filter extracts narrowband (<500MHz) microwave signal and broadband (>500MHz) microwave signal.Meanwhile the parallel organization can be with
The a wide range of adjusting for realizing bandwidth, so that accurately extracting useful signal in the wide-band from L-band to W-waveband.
3, of the invention by down-converter unit, local frequency comprehensive unit and the signal processing in microwave photon front-end processing
Unit is integrated on same chip, and down-converter unit is mainly made of balance photodetector, passes through the bat of lower sideband signal
The down coversion of microwave photon signal may be implemented in frequency.The achievable chip includes across wave band, tunable microwave photon processing, microwave
Photon broadband down coversion, a series of comprehensive microwave photon front end signals with including Phaseshift controlling of microwave photon local frequency receive
Function.
Detailed description of the invention
Fig. 1 is the overall structure diagram that silicon substrate integrated micro photon acceptor of the present invention handles chip；
Specific embodiment
It is right below in conjunction with drawings and examples in order to further elucidate the purpose, technical solution and Core Superiority of this programme
The present invention is described in further detail.The present embodiment is the technical scheme is that premise is implemented, to give in detail
Thin embodiment and operating process, but protection scope of the present invention is not limited to following embodiments.
Fig. 1 is the overall structure diagram that silicon substrate integrated micro photon acceptor of the present invention handles chip.As shown in Figure 1, this
Invention silicon substrate integrated micro photon acceptor handles chip, is broadly divided into six parts according to functional characteristics: Mach once moral intensity tune
Device 101 processed, staggeredly comb filter 102, phase-modulator 103, restructural bandpass filter 104, optical delay line 105 and balance
Photodetector 106.
The optical signal of single-frequency is inputted from silicon waveguide, first passes around Mach once moral intensity modulator 101.Believe in input light
When number passing through intensity modulator 101, passes through the alive size of silicon waveguide two sides metal electrodes institute after changing doping, change two
Arm phase difference, and intensity modulator is made to work in minimum transfer point.In this way, light carrier is pressed down in optical signal after modulation
System, but the upper and lower sideband of equality strength can be generated.Herein, the driving signal in intensity modulator is loaded on by tunable
Ground oscillator generates.The plasma dispersion effect that silicon waveguide has been used when adjusting strength modulator two-arm phase difference, that is, pass through
Silicon waveguide institute making alive after adjusting doping changes the free carrier concentration in silicon waveguide, to change the refraction of silicon materials
Rate realizes the adjusting to optical signal phase in silicon waveguide.
Then, suppressed light carrier and two sidebands of generation enter comb filter 102 of interlocking jointly and are solved
Multiplexing process.The staggeredly comb filter 102 separates the upper and lower sideband in signal, and is divided into two branch outputs,
Middle upper side band signal enters lower branch, and lower sideband signal enters upper branch, realizes demultiplexing function.
In upper branch, the lower sideband signal initially enters phase-modulator 103.In the phase-modulator 103,
The lower sideband signal is used as light carrier, carries out phase-modulation by the microwave signal inputted.The microwave signal of input is from L wave
Section arrives the broadband signal of W-waveband.The realization of phase-modulation is also with the plasma dispersion effect for having arrived silicon waveguide.
Then, enter restructural bandpass filter 104 by the modulated signal of phase-modulator 103 to be filtered.
Reconfigurable filter 104 is made of parallel two parts, and first part is based on the high-precision of silicon waveguide stimulated Brillouin scattering effect
Thin filter, second part are the broadband filter that Mach once moral structure is coupled based on micro-loop, and different filter functions are by photoswitch
It is selected.When needing to extract narrowband (< 500MHz) microwave signal, the switch selection first via, signal enters fine filtering
Device is filtered；When needing to extract broadband (> 500MHz) microwave signal, the second tunnel of switch selection, signal enters wideband filtered
Device is filtered.By this parallel organization, a wide range of adjusting of bandwidth may be implemented, in the wide-band from L-band to W-waveband
Inside accurately extract useful signal.Herein, the gain bandwidth of related silicon waveguide stimulated Brillouin scattering is in 10-100MHz
In range, using the characteristic, the fine filter based on silicon waveguide stimulated Brillouin scattering effect can realize to narrowband (<
500MHz) the extraction of microwave signal.Broadband filter based on micro-loop coupling Mach once moral structure is by two micro-ring resonator couplings
Unify a Mach-Zahnder interference device to constitute, two micro-loops are coupled with the two-arm up and down of interferometer respectively, the broadband based on the structure
Filter can realize the extraction to broadband (> 500MHz) microwave signal.
Next lower branch is illustrated.In lower branch, the upper side band signal isolated by comb filter of interlocking
Delay disposal is carried out into optical delay line 105, the optical signal after delay will be as the output letter of local light generation source and upper branch
It number is combined together by photo-coupler, is input to further device.
Then, enter balance photodetector 106 jointly by the signal light of photo-coupler and local light generation source signal.
In this device, the down coversion of microwave photon signal is realized by balance photodetector 106, intermediate-freuqncy signal is obtained, from chip
Output end output.It is handled finally, obtained intermediate-freuqncy signal will enter electric treatment module.
Amplitude-frequency response figure near device architecture shown in Fig. 1 can more intuitively reflect the function of each device.In this reality
It applies in example, firstly, the optical signal of single-frequency is inputted from chip input terminal, at Mach once moral intensity modulator 101, driving letter
It number is loaded into intensity modulator and signal light is modulated.It is powered on by changing the silicon waveguide two sides metal electrode after adulterating
The size of pressure, adjust modulator two-arm phase difference, so that it is worked in suppressed carrier operation point so that modulated light carrier by
To the upper and lower sideband for inhibiting but generating equality strength.Then, at staggeredly comb filter 102, upper and lower sideband is broken down into
It is transmitted in two branches, wherein lower sideband transmits in upper branch, and upper side band transmits in lower branch.Then, in upper branch,
Lower sideband signal is used as light carrier to enter phase-modulation 103 first, is modulated by the microwave signal inputted.Later, after modulation
Signal enter reconfigurable filter 104, it is filtered by fine filter or broadband filter as needed, is obtained
To narrowband (<500MHz) or broadband (>500MHz) microwave signal.In lower branch, upper side band signal passes through optical delay line 105
Afterwards, it is combined as the signal of local light generation source and upper branch by photo-coupler, is input to balance photodetector 106 together
In, the down coversion of microwave photon signal is realized by balance photodetector 106, obtains intermediate-freuqncy signal, and eventually enter into electric treatment
Module is handled.
In conclusion may be implemented according to the microwave photon reception processing chip integrated based on silicon substrate that the present invention realizes micro-
The sub- front end signal of the glistening light of waves receives, and has the characteristics that size is small, integrated level is high, low in energy consumption, stability is good, can be in microwave photon front end
Key effect is played in signal processing, is of very high actual application value.
It finally it should be noted that the above is only a preferred embodiment of the present invention, is not intended to limit the invention, ability
The those of ordinary skill in domain should understand that.It is done within the spirit and principles of the present invention it is any modification, equivalent replacement or
Improve etc., it should be included within the scope of the present invention.
Claims (1)
1. a kind of silicon substrate integrated micro photon front end receiver handles chip, which is characterized in that the chip includes Mach once moral intensity
Modulator (101), staggeredly comb filter (102), phase-modulator (103), restructural bandpass filter (104), light delay
Line (105) and balance photodetector (106), once moral intensity modulator (101) has light input end and driving to the Mach
Signal input part, the input of the Mach once output end of moral intensity modulator (101) and described staggeredly comb filter (102)
End is connected, and staggeredly comb filter (102) should have upper and lower two output ends, lower output end exports upper side band signal, and under
Branch connection, the lower branch include the optical delay line (105), and the upper output end exports lower sideband signal, and with it is upper
Branch connection, branch successively includes the phase-modulator (103), restructural bandpass filter (104) on this, and described can
Reconstruct bandpass filter (104) is by the first photoswitch, the second photoswitch and the high-precision fine filtering being connected in parallel between two switches
Wave device and broadband filter are constituted, the output end of the input terminal of first photoswitch and the phase-modulator (103)
It is connected, the input terminal of second photoswitch is connected with the output end of the restructural bandpass filter (104), described
Fine filter and broadband filter are located at the first via and the second tunnel of the restructural bandpass filter (104),
When two photoswitches select the first via, narrowband (< 500MHZ) microwave signal is extracted output；When two photoswitches select
When selecting the second tunnel, broadband (> 500MHz) microwave signal is extracted output, the output end and optocoupler of the lower branch and upper branch
The input terminal of clutch is connected, and the output end of the photo-coupler is connected with the input terminal of the balance photodetector (106), should
The output end of balance photodetector (106) is the output end of the chip, is connected with electric treatment module.
The Mach once under the driving of moral intensity modulator (101) driving signal, worked in suppressed carrier operation point, input light
Once moral intensity modulator (101) generates upper side band signal, lower sideband signal to Mach, and the upper side band signal is used as down coversion
Local light generation source is transmitted into lower branch, and the lower sideband signal is used as light carrier, is transmitted into upper branch, described
Lower sideband signal is filtered place to optical signal by the phase-modulator (103), restructural bandpass filter (104)
Reason, the two branches balance photodetector (106) described through photo-coupler input, obtains intermediate-freuqncy signal, eventually enters into electric treatment
Module is handled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910402785.8A CN110233678B (en) | 2019-05-15 | 2019-05-15 | Silicon-based integrated microwave photon receiving and processing chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910402785.8A CN110233678B (en) | 2019-05-15 | 2019-05-15 | Silicon-based integrated microwave photon receiving and processing chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110233678A true CN110233678A (en) | 2019-09-13 |
| CN110233678B CN110233678B (en) | 2022-03-08 |
Family
ID=67861350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910402785.8A Active CN110233678B (en) | 2019-05-15 | 2019-05-15 | Silicon-based integrated microwave photon receiving and processing chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110233678B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021081545A1 (en) * | 2019-10-24 | 2021-04-29 | Raytheon Company | Multiband photonic integrated circuit (pic) i and q demodulator |
| CN113132019A (en) * | 2021-05-19 | 2021-07-16 | 西南交通大学 | External modulation type multi-channel cooperative simulation multi-dimensional microwave photon acquisition chip |
| CN113382322A (en) * | 2021-06-07 | 2021-09-10 | 东南大学 | Receiving and transmitting switchable beam forming chip based on optical switch |
| CN113885128A (en) * | 2021-09-24 | 2022-01-04 | 上海交通大学 | Silicon-based reconfigurable microwave photon multi-beam forming network chip |
| CN113992274A (en) * | 2021-10-12 | 2022-01-28 | 北京理工大学 | Silicon-based integrated high-precision radio frequency signal phase-stabilizing transmission chip, transmitting terminal and system |
| CN114567384A (en) * | 2022-02-17 | 2022-05-31 | 上海交通大学 | Universal silicon-based photonic millimeter wave/terahertz chip and transmission system and method thereof |
| CN114567383A (en) * | 2022-02-15 | 2022-05-31 | 上海交通大学 | Silicon-based integrated photonic millimeter wave and terahertz transmission system |
| CN115225154A (en) * | 2022-07-19 | 2022-10-21 | 中国电子科技集团公司第四十四研究所 | Photon integrated chip and ultra-wideband radio frequency photon receiving and transmitting device |
| CN115473585A (en) * | 2022-04-20 | 2022-12-13 | 大连理工大学 | Multifunctional configurable photoelectric conversion array chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799608A (en) * | 2010-04-02 | 2010-08-11 | 上海交通大学 | Electric-control broadband photon radio-frequency phase shifter based on silicon-based micro-ring resonant cavity |
| CN107367880A (en) * | 2017-07-26 | 2017-11-21 | 中国科学院半导体研究所 | Microwave photon filter based on double parallel Mach zehnder modulators |
| CN108199776A (en) * | 2018-02-08 | 2018-06-22 | 吉林大学 | A kind of microwave photon means of upconversion and method based on optical-electronic oscillator |
-
2019
- 2019-05-15 CN CN201910402785.8A patent/CN110233678B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799608A (en) * | 2010-04-02 | 2010-08-11 | 上海交通大学 | Electric-control broadband photon radio-frequency phase shifter based on silicon-based micro-ring resonant cavity |
| CN107367880A (en) * | 2017-07-26 | 2017-11-21 | 中国科学院半导体研究所 | Microwave photon filter based on double parallel Mach zehnder modulators |
| CN108199776A (en) * | 2018-02-08 | 2018-06-22 | 吉林大学 | A kind of microwave photon means of upconversion and method based on optical-electronic oscillator |
Non-Patent Citations (1)
| Title |
|---|
| DAVID MARPAUNG 等: "Low-power, chip-based stimulated Brillouin scattering microwave photonic filter with ultrahigh selectivity", 《OPTICA》 * |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11101894B2 (en) | 2019-10-24 | 2021-08-24 | Raytheon Company | Multiband photonic integrated circuit (PIC) I and Q demodulator |
| WO2021081545A1 (en) * | 2019-10-24 | 2021-04-29 | Raytheon Company | Multiband photonic integrated circuit (pic) i and q demodulator |
| JP2022553699A (en) * | 2019-10-24 | 2022-12-26 | レイセオン カンパニー | Multiband photonic integrated circuit (PIC) I and Q demodulators |
| CN113132019B (en) * | 2021-05-19 | 2022-04-29 | 西南交通大学 | External modulation type multi-channel cooperative simulation multi-dimensional microwave photon acquisition chip |
| CN113132019A (en) * | 2021-05-19 | 2021-07-16 | 西南交通大学 | External modulation type multi-channel cooperative simulation multi-dimensional microwave photon acquisition chip |
| CN113382322A (en) * | 2021-06-07 | 2021-09-10 | 东南大学 | Receiving and transmitting switchable beam forming chip based on optical switch |
| CN113885128A (en) * | 2021-09-24 | 2022-01-04 | 上海交通大学 | Silicon-based reconfigurable microwave photon multi-beam forming network chip |
| CN113885128B (en) * | 2021-09-24 | 2022-08-09 | 上海交通大学 | Silicon-based reconfigurable microwave photon multi-beam forming network chip |
| WO2023044990A1 (en) * | 2021-09-24 | 2023-03-30 | 上海交通大学 | Silicon-based reconfigurable microwave photon multi-beam forming network chip |
| CN113992274A (en) * | 2021-10-12 | 2022-01-28 | 北京理工大学 | Silicon-based integrated high-precision radio frequency signal phase-stabilizing transmission chip, transmitting terminal and system |
| CN113992274B (en) * | 2021-10-12 | 2023-08-29 | 北京理工大学 | Silicon-based integrated high-precision radio frequency signal stable phase transmission chip, transmitting end and system |
| CN114567383A (en) * | 2022-02-15 | 2022-05-31 | 上海交通大学 | Silicon-based integrated photonic millimeter wave and terahertz transmission system |
| CN114567384A (en) * | 2022-02-17 | 2022-05-31 | 上海交通大学 | Universal silicon-based photonic millimeter wave/terahertz chip and transmission system and method thereof |
| CN115473585A (en) * | 2022-04-20 | 2022-12-13 | 大连理工大学 | Multifunctional configurable photoelectric conversion array chip |
| CN115225154A (en) * | 2022-07-19 | 2022-10-21 | 中国电子科技集团公司第四十四研究所 | Photon integrated chip and ultra-wideband radio frequency photon receiving and transmitting device |
| CN115225154B (en) * | 2022-07-19 | 2023-07-21 | 中国电子科技集团公司第四十四研究所 | Photon integrated chip and ultra-wideband radio frequency photon receiving and transmitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110233678B (en) | 2022-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110233678A (en) | Chip is handled based on silicon substrate integrated micro photon acceptor | |
| Xu et al. | Microcomb-based photonic local oscillator for broadband microwave frequency conversion | |
| US10659162B2 (en) | Photonic microwave down-conversion system and method | |
| CN104022830B (en) | Device for generating eight frequency multiplication millimeter waves by utilizing Mach-Zehnder modulator | |
| US8014676B2 (en) | CMOS-compatible tunable microwave photonic band-stop filter | |
| CN108199776B (en) | Microwave photon up-conversion device and method based on photoelectric oscillator | |
| CN103324002B (en) | The logical microwave photon filtering system of a kind of restructural single tape and method | |
| CN106877938A (en) | The device and method of full photogenerated frequency multiplication triangular wave | |
| CN105721062A (en) | Low stray bandwidth microwave photon mixing device | |
| CN103297145A (en) | Device for generating sixteen-frequency multiplication millimeter waves in full light | |
| Shi et al. | A novel frequency sextupling scheme for optical mm-wave generation utilizing an integrated dual-parallel Mach-Zehnder modulator | |
| CN102904646B (en) | Polarization multiplexing channelization receiver based on optical comb | |
| CN104113378A (en) | Apparatus and method capable of tuning microwave signal source of semiconductor optical amplifier | |
| CN106961252A (en) | Microwave photon mirror image suppresses down-conversion device and method | |
| Yu et al. | All-optical full-band RF receiver based on an integrated ultra-high-Q bandpass filter | |
| CN204886978U (en) | Equal 36 adjustable frequency -doubled signal generating device of no filtering compensation suppressed carrier system | |
| CN106019641A (en) | Method for generating polarization orthogonal dual-wavelength optical signal with large tuning range for frequency interval, and device thereof | |
| Wang et al. | Millimeter-wave signal generation with tunable frequency multiplication factor by employing UFBG-based acousto-optic tunable filter | |
| CN103018838B (en) | Wide-band tuning high q-factor single-pass band microwave photon filter | |
| Yang et al. | A stopband and passband switchable microwave photonic filter based on integrated dual ring coupled Mach–Zehnder interferometer | |
| CN114978332A (en) | Millimeter wave signal generating device and method with tunable frequency and phase | |
| CN111965917B (en) | Microwave up-converter based on nonlinear optical transmission line and implementation method thereof | |
| CN103178951A (en) | Chaotic signal generator based on tunable microring resonator | |
| CN104683035A (en) | Optical down-conversion method and system for high-frequency narrowband signal | |
| CN114629557A (en) | Anti-dispersion microwave photon acquisition and reception chip based on vestigial sideband modulation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |