CN110184577B - Preparation method and application of amorphous carbon film with piezoresistive performance and toughness on surface of flexible substrate - Google Patents

Preparation method and application of amorphous carbon film with piezoresistive performance and toughness on surface of flexible substrate Download PDF

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CN110184577B
CN110184577B CN201910533860.4A CN201910533860A CN110184577B CN 110184577 B CN110184577 B CN 110184577B CN 201910533860 A CN201910533860 A CN 201910533860A CN 110184577 B CN110184577 B CN 110184577B
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flexible substrate
amorphous carbon
carbon film
flexible
piezoresistive
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CN110184577A (en
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汪爱英
马鑫
郭鹏
张栋
赵玉龙
张琪
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Ningbo Institute of Material Technology and Engineering of CAS
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Ningbo Institute of Material Technology and Engineering of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

The invention provides a preparation method of an amorphous carbon film with piezoresistive performance and toughness on the surface of a flexible substrate. The method adopts a high-power pulse magnetron sputtering technology, selects a graphite target, and sputters and deposits an amorphous carbon film on the surface of a flexible substrate in an inert gas atmosphere, wherein the voltage of a pulse power supply is 800-1000V, and the pulse duty ratio is 1-5%. Compared with the prior art, the method also avoids the problem that the flexible substrate material is damaged due to overhigh temperature in the preparation process, thereby being applied to the flexible piezoresistive sensing element and realizing the flexibility of the piezoresistive sensing element.

Description

Preparation method and application of amorphous carbon film with piezoresistive performance and toughness on surface of flexible substrate
Technical Field
The invention belongs to the technical field of piezoresistive sensors, and particularly relates to a preparation method and application of an amorphous carbon film with piezoresistive performance and toughness on the surface of a flexible substrate.
Background
In recent years, flexible strain sensing devices have been applied more and more widely in wearable devices, robots, biological monitoring, and the like. The performance of the sensor is mainly determined by sensitive materials, and the piezoresistive sensitive material is a sensitive material with wider application. An important parameter characterizing the performance of piezoresistive sensitive materials is the piezoresistive coefficient, which reflects the sensitivity of the piezoresistive material.
The most representative of the piezoresistive sensitive materials is monocrystalline silicon, but its application in the field of flexible sensors is rare due to the manufacturing process. In recent years, novel sensitive materials represented by graphene and carbon nanotubes are increasingly applied to flexible strain sensors, but the production of the flexible strain sensors is difficult to batch and the cost is high because the flexible strain sensors still need a transfer process after the preparation of the flexible strain sensors.
Amorphous carbon films, known by the english name amorphus carbon, abbreviated as a-C, are a generic name for a class of amorphous carbon materials. In general terms, the amount of the solvent to be used,the carbon atoms in the amorphous carbon film mainly pass through sp2Covalent bonds and sp3An irregular spatial network is formed, which is amorphous and therefore different from the anisotropy of crystalline materials, whose appearance is isotropic. In recent years, the amorphous carbon film has been found to have excellent piezoresistive properties, as well as good mechanical properties, optical properties, and chemical properties, such as high hardness and elastic modulus, low friction coefficient, light transmittance, conductivity controllability, chemical inertness, and biocompatibility, and thus can be used for piezoresistive sensor elements. However, it is a technical problem for those skilled in the art to prepare a flexible sensing element from an amorphous carbon film as a piezoresistive sensitive material, because on one hand, a flexible substrate is required, and on the other hand, the amorphous carbon film has good toughness on the surface of the flexible substrate, and can be deformed synchronously with the flexible substrate. However, it is not easy to prepare an amorphous carbon film having good toughness on the surface of a flexible substrate because the flexible substrate is easily deformed and deteriorated during the preparation process, and it is one of the research subjects of those skilled in the art to realize the amorphous carbon film having good toughness.
Disclosure of Invention
Aiming at the technical current situation, the invention aims to realize the preparation of the amorphous carbon film with good piezoresistive performance and toughness on the surface of the flexible substrate, and meanwhile, the flexible substrate material is not damaged in the preparation process.
In order to achieve the technical purpose, the inventor tries to prepare an amorphous carbon film on the surface of a flexible substrate by adopting a high-power pulse magnetron sputtering technology, and finds that compared with the traditional magnetron sputtering technology, the pulse power supply voltage in the technology is higher, and on one hand, sp (sp) in the prepared amorphous carbon film can be enabled3The content is increased, so that the piezoresistive coefficient of the amorphous carbon film can be improved; on the other hand, the high power can increase the temperature in the preparation process, so that the flexible substrate material is easily damaged in the preparation process, and the material and the flexibility of the flexible substrate material are affected; in addition, a process for realizing good toughness of the amorphous carbon film so as to be able to be simultaneously deformed with the deformation of the flexible substrate needs to be explored.
After a large number of long-term experiments and researches, the inventor finds that when the high-power pulse power supply voltage is selected to be 800-1000V, the obtained amorphous carbon film has high voltage resistance coefficient and good toughness, and on the basis, when the pulse duty ratio is selected to be 1-5%, the problem that the flexible substrate material is damaged due to overhigh temperature in the preparation process can be solved.
Namely, the technical scheme of the invention is as follows: a preparation method of an amorphous carbon film with piezoresistive performance and toughness on the surface of a flexible substrate is characterized by comprising the following steps: the method comprises the steps of selecting a graphite target by adopting a high-power pulse magnetron sputtering technology, sputtering and depositing an amorphous carbon film on the surface of a flexible substrate in an inert gas atmosphere, wherein the voltage of a pulse power supply is 800-1000V, and the pulse duty ratio is 1-5%.
Preferably, the inert gas is argon. As a further preference, the pressure of argon in the vacuum deposition chamber is 0.1Pa to 0.2 Pa.
Preferably, the negative voltage of the direct current pulse of the flexible substrate is-10V to-50V.
The flexible substrate means that the substrate material has flexibility and can be deformed such as bending and stretching. The flexible substrate material is not limited, and includes flexible polymer material, such as one or more of PI, PET, PDMS, PMMA, and the like.
Preferably, the thickness of the amorphous carbon film is 100-500 nm.
The method adopts a high-power pulse magnetron sputtering technology to prepare the amorphous carbon film on the surface of the flexible substrate, core technological parameters are preferably selected, the voltage of a high-power pulse power supply is 800-1000V, the pulse duty ratio is 1% -5%, stable discharge of the graphite target under high voltage is realized under the condition of the preferred technological parameters, and compared with the traditional magnetron sputtering, on one hand, the prepared amorphous carbon film has higher sp (sp) value3The content of the amorphous carbon film is increased, so that the piezoresistive coefficient of the amorphous carbon film is improved; on the other hand, the problem that the flexible substrate material is damaged due to overhigh temperature in the preparation process is avoided; meanwhile, the prepared amorphous carbon film has good toughness, does not crack in the deformation process, and can deform synchronously with the flexible substrate, thereby laying a foundation for realizing the flexible piezoresistive sensing element. In addition, the first and second substrates are,compared with the graphene, carbon nanotube and other piezoresistive materials, the amorphous carbon film is simple and convenient to prepare, can be deposited in situ in a large area, and does not need manual transfer, so that the amorphous carbon film has obvious process advantages.
Based on the preparation method, the invention provides a flexible piezoresistive sensing element which comprises a flexible substrate, an amorphous carbon film serving as a piezoresistor and arranged on the surface of the flexible substrate, and metal electrodes arranged at two ends of the piezoresistor.
The material of the metal electrode is not limited, and comprises one or a combination of Au, Cr, Cu, Al and the like.
Preferably, a flexible protective layer is further included for protecting the piezoresistor. The flexible protective layer is not limited to be made of PDMS, PMMA, etc.
The amorphous carbon film piezoresistor is in a certain pattern on the surface of a substrate, and as an implementation mode, the method for preparing the amorphous carbon film piezoresistor on the surface of the flexible substrate comprises the following steps:
(1) preparing a first mask on the surface of the flexible substrate by using a photoetching process, and enabling the part of the surface of the flexible substrate without the first mask to be in the pattern;
(2) placing the flexible substrate treated in the step (1) in a vacuum coating chamber, adopting a high-power pulse magnetron sputtering technology, selecting a graphite target, and depositing the amorphous carbon film on the surface of the flexible substrate, wherein the voltage of a pulse power supply is 800-1000V, and the pulse duty ratio is 1% -5%;
(3) taking the flexible substrate treated in the step (2) out of the vacuum coating chamber, and removing the first mask by using a stripping process;
as one implementation mode, the preparation method of the metal electrode comprises the following steps:
(1) preparing a second mask on the surface of the piezoresistor by using a photoetching process, so that the part, which is not covered by the second mask, on the surface of the piezoresistor is in the shape of the metal electrode;
(2) adopting a magnetron sputtering process, wherein a sputtering target material is metal, and sputtering and depositing on the surface of the piezoresistor under the inert gas atmosphere condition to obtain a metal electrode; then, the first mask is removed by using a stripping process.
Preferably, the sputtering current is 2.0A to 3.0A.
Preferably, the deposition chamber pressure is 0.2-0.5 Pa.
Preferably, the DC pulse bias voltage of the flexible substrate is-100-0V.
Drawings
FIG. 1 shows the piezoresistive performance test results of the amorphous carbon film on the surface of the flexible substrate prepared in example 1.
FIG. 2 is the surface micro-topography of the amorphous carbon film on the surface of the flexible substrate made in example 1.
FIG. 3 shows the surface micro-topography of the amorphous carbon film on the surface of the flexible substrate prepared in comparative example 1.
FIG. 4 shows the surface micro-topography of the amorphous carbon film on the surface of the flexible substrate prepared in comparative example 2.
FIG. 5 shows the piezoresistive performance test results of the amorphous carbon film on the surface of the flexible substrate prepared in example 2.
FIG. 6 shows the piezoresistive performance test results of the amorphous carbon film on the surface of the flexible substrate prepared in example 3.
FIG. 7 is a top view of the flexible substrate, amorphous carbon film, and metal electrodes of the flexible piezoresistive sensing element of example 4.
FIG. 8 is a side view of the flexible piezoresistive sensor element of example 4.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, which are intended to facilitate the understanding of the present invention and are not intended to limit the present invention in any way.
Fig. 1 the reference numerals in fig. 2 are: 1-flexible substrate, 2-amorphous carbon film, 3-metal electrode, 4-flexible protective layer.
Example 1:
in this embodiment, the flexible substrate material is PI, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) the flexible substrate is dried after ultrasonic cleaning by acetone and then is placed in a vacuum coating chamber, and the vacuum is pumped to 2.7 multiplied by 10- 3Pa, followed by argonEtching the surface of the substrate for 30min by using plasma;
(2) selecting a high-purity graphite target by adopting a high-power pulse magnetron sputtering technology, sputtering carbon atoms from the high-purity graphite target through ionized argon, depositing an amorphous carbon film on the surface of the flexible substrate treated in the step (1), controlling the argon gas pressure of a vacuum coating chamber to be 0.1Pa, controlling the high-power pulse power supply voltage to be 800V, controlling the pulse duty ratio to be 1%, and controlling the direct-current pulse negative voltage of the flexible substrate to be-10V, thereby obtaining the amorphous carbon film.
The flexible substrate with the amorphous carbon film deposited on the surface is stretched and deformed, the piezoresistive performance of the amorphous carbon film is tested, and the result is shown in figure 1, wherein the abscissa strain represents the ratio of the deformation of the amorphous carbon film to the size of the amorphous carbon film before deformation. As can be seen from fig. 1, the amorphous carbon film has good piezoresistive properties. The surface microscopic morphology picture of the amorphous carbon film after the piezoresistive test is shown in figure 2, which shows that the amorphous carbon film has no cracking caused by the deformation test and has good toughness.
Comparative example 1:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as the step (2) in the embodiment 1 except that the high power pulse power supply voltage is 500V.
The surface micro-topography of the amorphous carbon film on the surface of the flexible substrate after the deposition is finished is shown in fig. 3, that is, the amorphous carbon film has microcracks on the surface due to the action of thermal stress in the preparation process, and cannot be used for piezoresistive testing.
Comparative example 2:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as the step (2) in the embodiment 1 except that the high power pulse power supply voltage is 700V;
the surface micro-topography of the amorphous carbon film on the surface of the flexible substrate after the deposition is finished is shown in fig. 4, that is, the amorphous carbon film has microcracks on the surface due to the action of thermal stress in the preparation process, and cannot be used for piezoresistive testing.
Comparative example 3:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as in step (2) in example 1, except that the pulse duty ratio was 10%;
after the deposition of the amorphous carbon film is finished, the flexible substrate material is deformed and twisted, and cannot be used for piezoresistive testing.
Comparative example 4:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as in step (2) in example 1, except that the pulse duty ratio was 20%;
after the deposition of the amorphous carbon film is finished, the flexible substrate material is seriously deformed, distorted and ablated and cannot be used for piezoresistive testing.
Example 2:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as the step (2) in the embodiment 1 except that the high power pulse power supply voltage is 1000V;
similar to example 1, the flexible substrate with the amorphous carbon film deposited on the surface thereof prepared above was subjected to tensile deformation, and the piezoresistive performance of the amorphous carbon film was tested, and the result is shown in fig. 5, which indicates that the amorphous carbon film has good piezoresistive performance. Similar to example 1, the amorphous carbon film after the piezoresistive test did not crack due to the deformation test, and had good toughness.
Example 3:
in this embodiment, the flexible substrate is the same as that in embodiment 1, and an amorphous carbon film is prepared on the surface of the flexible substrate, specifically as follows:
(1) same as in step (1) in example 1;
(2) substantially the same as in step (2) in example 1, except that the pulse duty ratio was 5%;
similar to example 1, the flexible substrate with the amorphous carbon film deposited on the surface thereof prepared above was subjected to tensile deformation, and the piezoresistive performance of the amorphous carbon film was tested, and the result is shown in fig. 6, which indicates that the amorphous carbon film has good piezoresistive performance. Similar to example 1, the amorphous carbon film after the piezoresistive test did not crack due to the deformation test, and had good toughness.
Example 4:
in this embodiment, the structure of the flexible piezoresistive sensing element is shown in fig. 7 and 8, and includes a flexible substrate 1, an amorphous carbon film 2, and a metal electrode 3. In this embodiment, the flexible substrate material is PI. The amorphous carbon film 2 is located on the surface of the flexible substrate 1 and takes a zigzag shape as shown in fig. 7, the amorphous carbon film is used as a piezoresistor, and metal electrode sites 3 are arranged at two ends of the amorphous carbon film 2.
As shown in fig. 8, in the present embodiment, the flexible piezoresistive sensing element further includes a flexible protective layer 4, and the flexible protective layer 4 covers the amorphous carbon film. In this embodiment, the flexible passivation layer is made of PDMS.
The preparation method of the flexible piezoresistive sensing element comprises the following steps:
(1) the flexible substrate is dried after ultrasonic cleaning by acetone; preparing amorphous carbon film patterned mask on a flexible substrate by using a photoetching process; preparing a first mask on the surface of the flexible substrate, and enabling the part of the surface of the flexible substrate which is not covered by the first mask to be in a fold line shape as shown in figure 1;
(2) placing the flexible substrate treated in the step (1) in a vacuum coating chamber, and vacuumizing to 2.7 multiplied by 10-3Pa, and then etching the surface of the substrate for 30min by using argon plasma;
(3) selecting a high-purity graphite target by adopting a high-power pulse magnetron sputtering technology, sputtering carbon atoms from the high-purity graphite target through ionized argon, depositing an amorphous carbon film on the surface of the flexible substrate treated in the step (2), controlling the argon pressure of a vacuum coating chamber to be 0.1Pa, controlling the high-power pulse power supply voltage to be 800V, controlling the pulse duty ratio to be 1%, and controlling the direct-current pulse negative voltage of the flexible substrate to be-10V to obtain a graphical amorphous carbon film;
(4) taking the flexible substrate treated in the step (3) out of the vacuum coating chamber, and stripping off the first mask by using acetone; then, preparing a second mask on the amorphous carbon film by utilizing a photoetching process, so that the part which is not covered by the second mask is in the shape of a metal electrode;
(5) placing the flexible substrate treated in the step (4) into a vacuum coating chamber, adopting a magnetron sputtering process, selecting a metal target material, wherein the sputtering gas is argon, depositing a metal electrode on the surface of the amorphous carbon film, the sputtering current is 3.0A, the chamber pressure is controlled to be 0.3Pa, and the direct-current pulse bias voltage of the flexible substrate is-100V;
(6) taking the flexible substrate with the amorphous carbon film and the metal electrode processed in the step (5) out of the chamber, and stripping off the mask II by using acetone; then, connecting a metal silver wire on the metal electrode by using conductive silver paste, and drying and curing at 120 ℃;
(7) and (3) uniformly coating liquid PDMS on the surface of the sample prepared in the step (6), as shown in FIG. 8, so that the sample uniformly covers the surface of the flexible substrate except the metal electrode, and then curing the PDMS at 120 ℃.
Example 5:
in this embodiment, the structure of the flexible piezoresistive sensing element is the same as that of embodiment 4.
In this embodiment, the manufacturing method of the flexible piezoresistive sensing element is basically the same as that in embodiment 4, except that: in the step (3), the voltage of the high-power pulse power supply is 900V, and the pulse duty ratio is 3%.
Example 6:
in this embodiment, the structure of the flexible piezoresistive sensing element is the same as that of embodiment 4.
In this embodiment, the manufacturing method of the flexible piezoresistive sensing element is basically the same as that in embodiment 4, except that: in the step (3), the voltage of the high-power pulse power supply is 1000V, and the pulse duty ratio is 5%.
The embodiments described above are intended to illustrate the technical solutions of the present invention in detail, and it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modification, supplement or similar substitution made within the scope of the principles of the present invention should be included in the protection scope of the present invention.

Claims (15)

1. The preparation method of the amorphous carbon film with good piezoresistive performance and toughness on the surface of the flexible substrate is characterized by comprising the following steps: the method comprises the steps of selecting a graphite target by adopting a high-power pulse magnetron sputtering technology, sputtering and depositing an amorphous carbon film on the surface of a flexible substrate in an inert gas atmosphere, wherein the voltage of a pulse power supply is 800-1000V, and the pulse duty ratio is 1-5%.
2. The method for preparing an amorphous carbon film having piezoresistive properties and toughness on the surface of a flexible substrate according to claim 1, wherein: the inert gas is argon.
3. The method for preparing an amorphous carbon film having both good piezoresistive properties and good toughness on the surface of a flexible substrate according to claim 1, wherein: the pressure of argon in the deposition chamber is 0.1Pa-0.2 Pa.
4. The method for preparing an amorphous carbon film having both good piezoresistive properties and good toughness on the surface of a flexible substrate according to claim 1, wherein: the negative voltage of the direct current pulse of the flexible substrate is-10V to-50V.
5. The method for preparing an amorphous carbon film having both good piezoresistive properties and good toughness on the surface of a flexible substrate according to claim 1, wherein: the flexible substrate material is a flexible polymer material.
6. The method of claim 5, wherein the method comprises the following steps: the flexible substrate material is one or more of PI, PET, PDMS and PMMA.
7. The method for preparing an amorphous carbon film having both good piezoresistive properties and good toughness on the surface of a flexible substrate according to claim 1, wherein: the thickness of the amorphous carbon film is 100-500 nm.
8. A flexible piezoresistive sensing element comprises a flexible substrate, a piezoresistor and metal electrodes arranged at two ends of the piezoresistor; the method is characterized in that: the piezoresistor is prepared by the preparation method of any one of claims 1 to 7.
9. The flexible piezoresistive sensing element according to claim 8, wherein: also included is a flexible protective layer.
10. The flexible piezoresistive sensing element according to claim 9, wherein: the flexible protective layer material comprises one or more of PDMS and PMMA.
11. The flexible piezoresistive sensing element according to claim 8, wherein: the piezoresistor is in a certain pattern on the surface of a base body, and the method for preparing the piezoresistor on the surface of the flexible substrate comprises the following steps:
(1) preparing a first mask on the surface of the flexible substrate by using a photoetching process, and enabling the part of the surface of the flexible substrate without the first mask to be in the pattern;
(2) placing the flexible substrate treated in the step (1) in a vacuum coating chamber, adopting a high-power pulse magnetron sputtering technology, selecting a graphite target, and depositing the amorphous carbon film on the surface of the flexible substrate, wherein the voltage of a pulse power supply is 800-1000V, and the pulse duty ratio is 1% -5%;
(3) and (3) taking the flexible substrate treated in the step (2) out of the vacuum coating chamber, and removing the first mask by using a stripping process.
12. The flexible piezoresistive sensing element according to claim 8, wherein: the preparation method of the metal electrode comprises the following steps:
(1) preparing a second mask on the surface of the piezoresistor by using a photoetching process, so that the part, which is not covered by the second mask, on the surface of the piezoresistor is in the shape of the metal electrode;
(2) adopting a magnetron sputtering process, wherein a sputtering target material is metal, and sputtering and depositing on the surface of the piezoresistor under the inert gas atmosphere condition to obtain a metal electrode; then, the first mask is removed by using a stripping process.
13. The flexible piezoresistive sensing element according to claim 8, wherein: the sputtering current is 2.0A-3.0A.
14. The flexible piezoresistive sensing element according to claim 13, wherein: the pressure of the deposition chamber is 0.2-0.5 Pa.
15. The flexible piezoresistive sensing element according to claim 13, wherein: the bias voltage of the DC pulse of the flexible substrate is-100-0V.
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