CN110137125A - A kind of chip peeling method of LED lamp bead - Google Patents
A kind of chip peeling method of LED lamp bead Download PDFInfo
- Publication number
- CN110137125A CN110137125A CN201810125179.1A CN201810125179A CN110137125A CN 110137125 A CN110137125 A CN 110137125A CN 201810125179 A CN201810125179 A CN 201810125179A CN 110137125 A CN110137125 A CN 110137125A
- Authority
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- China
- Prior art keywords
- lamp bead
- chip
- led lamp
- led
- peeling method
- Prior art date
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- 239000011324 bead Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000010008 shearing Methods 0.000 claims abstract description 17
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- 239000003292 glue Substances 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 244000137852 Petrea volubilis Species 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 17
- 238000004458 analytical method Methods 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 7
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000233855 Orchidaceae Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- -1 not mercurous Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
A kind of chip peeling method of LED lamp bead includes the following steps: a) to shear the upper end of LED lamp bead, makes the region distance chip 0.25-0.5mm of shearing；B) lamp bead after N number of shearing is linearly successively weldingly fixed on LED support item, is highly consistent after each lamp bead welding；C) LED support item is put into baking in baking oven heats and softens lamp bead；D) LED lamp bead after baking is put into culture dish and is impregnated using organic solvent, the glue of the chip surface in LED lamp bead is dissolved by an organic solvent, and chip is removed from lamp bead, and the chip after each removing is taken out to chip from culture dish with tweezers.Shorten the time of LED lamp bead chip removing, and it only uses common organic solvent and has prevented damage of the lamp bead corrosive liquid to chip, the efficiency of lamp bead chip removing had both been improved in this way, the use for decreasing lamp bead corrosive liquid reduces harm of the lamp bead corrosive liquid to personnel, environment and LED chip, improves the efficiency of the bad analysis of LED lamp bead.
Description
Technical field
The present invention relates to photoelectron technical fields, and in particular to a kind of chip peeling method of LED lamp bead.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
LED lamp bead has the following advantages that 1. voltages: LED lamp bead uses low-tension supply, and supply voltage is between 2-4V, root
It is different and different according to product, so drive it is one and compares high voltage power supply；Safer power supply, especially suitable for public place；
2. electric current: operating current brightens in 0-15mA, brightness with the increase of electric current；3. efficiency: consumption energy is relatively the same as the white of light efficiency
Vehement lamp reduces 80%；4. applicability: very little, each unit LEDs small pieces are the squares of 3-5mm, it is possible to are prepared into
The device of various LED lamp bead shapes, and it is suitable for variable environment；5. the response time: the response time of its incandescent lamp is milli
Second grade, the response time of LED lamp are nanosecond；6. environmental pollution: without poisonous metal mercury；7. color: changing electric current can
With discoloration, light emitting diode adjusts the band structure and band gap of material conveniently by chemical modification method, realizes the green orchid of reddish yellow
Orange is multicolor luminous.It can successively become orange with the increase of electric current for red LED when such as low current, yellow, finally
For green.
LED lamp bead be widely used in lamp ornaments lighting, LED large screen display, traffic lights, decoration, computer, electronic toy gift,
Many production fields such as interchanger, telephone set, advertisement, city brilliance engineering.
LED lamp bead has certain problems in use, at this stage how really effectively efficiently problem analysis at
For the most important thing, because the limitation of LED lamp bead causes when something goes wrong, chip producer and encapsulation producer will appear biggish strive
View, just needs to remove the chip of LED lamp bead at this time, and the performance of chip is come after the removing of preceding and chip after comparison chip removing
The reason of confirmation problem.The chip removing of LED lamp bead is all using the method for bubble lamp bead corrosive liquid, excessive use lamp bead at this stage
Corrosive liquid has large effect to environment, and the length of time impregnated also plays biggish shadow to the analysis of practical problem
It rings, how efficiently and effectively to realize that the chip removing of LED lamp bead is reversed as mainly studying at this stage.
Summary of the invention
To overcome the above deficiencies, the invention provides a kind of raising lamp bead chip charge stripping efficiency, reduce lamp bead
The chip peeling method of the LED lamp bead of corrosive liquid dosage.
The present invention overcomes the technical solution used by its technical problem to be:
A kind of chip peeling method of LED lamp bead, includes the following steps:
A) upper end of LED lamp bead is sheared, makes the region distance chip 0.25-0.5mm of shearing；
B) lamp bead after N number of shearing is linearly successively weldingly fixed on LED support item, height after each lamp bead welding
It is consistent；
C) LED support item is put into baking in baking oven heats and softens lamp bead；
D) LED lamp bead after baking is put into culture dish and is impregnated using organic solvent, the glue quilt of the chip surface in LED lamp bead
Organic solvent dissolution, chip are removed from lamp bead, and the chip after each removing is taken out to chip from culture dish with tweezers.
Preferably, it is first drawn at 0.5-1mm above the chip using marking pen in LED lamp bead before shearing in step a)
The marking is sheared lamp bead along the marking using tool.
Preferably, the burr of share zone is polished using sand paper after the shearing of lamp bead upper end in step a).
Preferably, the tool used when shearing is diagonal cutting pliers.
Preferably, baking oven baking temperature is 140-160 DEG C in step c).
Preferably, baking time is 60-90 minutes in step c).
Preferably, organic solvent is acetone soln in step d), and soaking time is 60-120 minutes.
The beneficial effects of the present invention are: LED lamp bead can be highly consistent after treatment, lamp bead etching time difference
Smaller, most of lamp bead is cut short by cutting operation, therefore substantially reduces the time of LED lamp bead chip removing, and only make
Prevent damage of the lamp bead corrosive liquid to chip with common organic solvent, both improve the efficiency of lamp bead chip removing in this way,
The use for decreasing lamp bead corrosive liquid reduces harm of the lamp bead corrosive liquid to personnel, environment and LED chip, and passes through this
Method can efficiently remove lamp bead chip and improve the efficiency of the bad analysis of LED lamp bead.
Specific embodiment
The present invention will be further described below.
A kind of chip peeling method of LED lamp bead, includes the following steps:
A) upper end of LED lamp bead is sheared, makes the region distance chip 0.25-0.5mm of shearing；
B) lamp bead after N number of shearing is linearly successively weldingly fixed on LED support item, height after each lamp bead welding
It is consistent；
C) LED support item is put into baking in baking oven heats and softens lamp bead；
D) LED lamp bead after baking is put into culture dish and is impregnated using organic solvent, the glue quilt of the chip surface in LED lamp bead
Organic solvent dissolution, chip are removed from lamp bead, and the chip after each removing is taken out to chip from culture dish with tweezers.
Existing LED lamp bead chip removing technology in, need using more lamp bead corrosive liquid and the time it is long, and because
Lamp bead reason causes different lamp beads to etch, and time difference is larger, and analysis undesirable to LED lamp bead causes biggish inconvenience
And lamp bead corrosive liquid is easy to cause large effect to environment more using, and lamp bead corrosive liquid itself has certain corrosivity
It is easy to cause damage that subsequent analysis result is caused to be distorted chip itself using lamp bead corrosive liquid removing chip.The present invention passes through elder generation
LED lamp bead is largely cut off, then lamp bead is welded on common LED waste frame item and height is consistent after lamp bead welding, then
Soldered lamp bead is put into toast in baking oven and softens remaining lamp bead, ordinary organic solvents immersion is reused and shells chip
From the method LED lamp bead can be highly consistent after treatment, and lamp bead etching time difference is smaller, and most of lamp bead is
It is cut short by cutting operation, therefore substantially reduces the time of LED lamp bead chip removing, and only use common organic solvent Du
Damage of the lamp bead corrosive liquid to chip absolutely had so both improved the efficiency of lamp bead chip removing, and had decreased lamp bead corrosive liquid
Use reduce harm of the lamp bead corrosive liquid to personnel, environment and LED chip, and lamp can efficiently be removed by the method
Bead core piece improves the efficiency of the bad analysis of LED lamp bead.
Embodiment 1:
The marking first is drawn at 0.5-1mm above the chip using marking pen in LED lamp bead before shearing in step a), uses work
Tool shears lamp bead along the marking.The technique sheared again by first drawing the marking not only may insure that shear height is met the requirements, simultaneously
Improve shearing accuracy and shear efficiency.
Embodiment 2:
The burr of share zone is polished using sand paper after the shearing of lamp bead upper end in step a).Lamp bead shear surface after polishing
It is smooth, it is ensured that lamp bead corrosive liquid is sufficiently dissolved with the glue on chip.
Embodiment 3:
Preferably, the tool used when shearing is diagonal cutting pliers.
Embodiment 4:
Baking oven baking temperature is 140-160 DEG C in step c).
Embodiment 5:
Baking time is 60-90 minutes in step c).
Embodiment 6:
Organic solvent is acetone soln in step d), and soaking time is 60-120 minutes.
Claims (7)
1. a kind of chip peeling method of LED lamp bead, which comprises the steps of:
A) upper end of LED lamp bead is sheared, makes the region distance chip 0.25-0.5mm of shearing；
B) lamp bead after N number of shearing is linearly successively weldingly fixed on LED support item, height after each lamp bead welding
It is consistent；
C) LED support item is put into baking in baking oven heats and softens lamp bead；
D) LED lamp bead after baking is put into culture dish and is impregnated using organic solvent, the glue quilt of the chip surface in LED lamp bead
Organic solvent dissolution, chip are removed from lamp bead, and the chip after each removing is taken out to chip from culture dish with tweezers.
2. the chip peeling method of LED lamp bead according to claim 1, it is characterised in that: in step a) before shearing first
The marking is drawn at 0.5-1mm above the chip in LED lamp bead using marking pen, is sheared lamp bead along the marking using tool.
3. the chip peeling method of LED lamp bead according to claim 1, it is characterised in that: lamp bead upper end is cut in step a)
The burr of share zone is polished using sand paper after cutting.
4. the chip peeling method of LED lamp bead according to claim 2, it is characterised in that: the tool used when shearing is
Diagonal cutting pliers.
5. the chip peeling method of LED lamp bead according to claim 1, it is characterised in that: baking oven baking temperature in step c)
Degree is 140-160 DEG C.
6. the chip peeling method of LED lamp bead according to claim 1, it is characterised in that: baking time is in step c)
60-90 minutes.
7. the chip peeling method of LED lamp bead according to claim 1, it is characterised in that: organic solvent is in step d)
Acetone soln, soaking time are 60-120 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810125179.1A CN110137125B (en) | 2018-02-08 | 2018-02-08 | Chip stripping method of LED lamp bead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810125179.1A CN110137125B (en) | 2018-02-08 | 2018-02-08 | Chip stripping method of LED lamp bead |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110137125A true CN110137125A (en) | 2019-08-16 |
| CN110137125B CN110137125B (en) | 2021-04-06 |
Family
ID=67567543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810125179.1A Active CN110137125B (en) | 2018-02-08 | 2018-02-08 | Chip stripping method of LED lamp bead |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110137125B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030616A (en) * | 2007-03-21 | 2007-09-05 | 山东华光光电子有限公司 | Production of high-brightness light-emitting diodes chip |
| CN105977363A (en) * | 2016-07-01 | 2016-09-28 | 安徽亮亮电子科技有限公司 | LED substandard lamp bead recycling and re-use method |
| CN106238436A (en) * | 2016-07-29 | 2016-12-21 | 四川圣典节能服务有限公司 | A kind of LED regeneration technology |
| KR20170017578A (en) * | 2015-08-07 | 2017-02-15 | 인베니아 주식회사 | Substrate bonding apparatus and method of bonding the substrate |
| US20170138549A1 (en) * | 2015-11-17 | 2017-05-18 | Psi Co., Ltd. | Nano-Scale Light-Emitting Diode (LED) Electrode Assembly Emitting Polarized Light, Method Of Manufacturing The Same, And Polarized LED Lamp Having The Same |
-
2018
- 2018-02-08 CN CN201810125179.1A patent/CN110137125B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030616A (en) * | 2007-03-21 | 2007-09-05 | 山东华光光电子有限公司 | Production of high-brightness light-emitting diodes chip |
| KR20170017578A (en) * | 2015-08-07 | 2017-02-15 | 인베니아 주식회사 | Substrate bonding apparatus and method of bonding the substrate |
| US20170138549A1 (en) * | 2015-11-17 | 2017-05-18 | Psi Co., Ltd. | Nano-Scale Light-Emitting Diode (LED) Electrode Assembly Emitting Polarized Light, Method Of Manufacturing The Same, And Polarized LED Lamp Having The Same |
| CN105977363A (en) * | 2016-07-01 | 2016-09-28 | 安徽亮亮电子科技有限公司 | LED substandard lamp bead recycling and re-use method |
| CN106238436A (en) * | 2016-07-29 | 2016-12-21 | 四川圣典节能服务有限公司 | A kind of LED regeneration technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110137125B (en) | 2021-04-06 |
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