CN110121787A - 高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法 - Google Patents
高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法 Download PDFInfo
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Abstract
本发明是一种太阳能电池,其是于具有第一导电型的半导体基板的第一主表面上,拥有具有第一导电型的基极层、及邻接于基极层且具有与第一导电型相反的导电型的第二导电型的射极层,至少于基极层上具有基极集电电极的太阳能电池,其中基极集电电极的一部分亦配置于射极层上,此射极层邻接于配置有基极集电电极的基极层。由此,提供廉价且光电变换效率高的太阳能电池。
Description
技术领域
本发明关于高光电变换效率太阳能电池及高光电变换效率太阳能电池的制造方法。
背景技术
作为使用单晶或多晶半导体基板的比较高光电变换效率的太阳能电池构造的一个,有将正负的电极皆设于非受光面(背面)的背面电极型太阳能电池。图1中显示背面电极型太阳能电池的背面的概观。射极层102及基极层101交替地排列,沿着各自的层将电极(103、104)设于层上。射极层宽度为数mm~数百μm,基极层宽度为数百μm~数十μm。又,电极宽度一般为数百~数十μm左右,该电极多称为指状电极。
图2中显示背面电极型太阳能电池的剖面构造的模型图。于基板202的背面的最表层附近,形成射极层102及基极层101。各层厚至多1μm左右。于各层上设置指状电极(205、206),非电极区域的表面被氮化硅膜或氧化硅膜等的背面保护膜207所覆盖。于受光面侧,以减低反射损失为目的,设置抗反射膜201。
现有技术文献
专利文献
专利文献1:日本特开2006-332273号公报
发明内容
发明所要解决的问题
于背面电极型的太阳能电池的制法上的问题点的一个,有基极层与基极电极的偏移。以印刷法形成电极时,由于版的伸展随着时间经过或各制版而变化,如上述沿着宽度数百μm~数十μm的基极层安定地形成宽度数百~数十μm的电极者极困难。为了缓和此偏移,扩大基极层宽度者制法上最简单,但若扩大基极层宽度,则变换效率会降低,例如由专利文献1所周知。若考虑制造成本,则印刷法最有效,必须建立维持着基极层宽度,用印刷法以高良率形成电极的方法。
本发明是鉴于上述问题点而完成者,目的在于提供光电变换效率高且廉价的太阳能电池。又,本发明的目的在于提供一种高光电变换效率太阳能电池的制造方法,其可增大电极的偏移的容许度,生产性高,高良率。
解决问题的手段
为了达成上述目的,本发明提供一种太阳能电池,其是于具有第一导电型的半导体基板的第一主表面上,拥有具有前述第一导电型的基极层、及邻接于前述基极层且具有与前述第一导电型相反的导电型的第二导电型的射极层,至少于前述基极层上具有基极集电电极的太阳能电池,其特征为:前述基极集电电极的一部分亦配置于前述射极层上,此射极层邻接于配置有该基极集电电极的前述基极层。
如此地,由于基极集电电极的一部分亦配置于射极层上,而不需要为了防止电极的位置偏移而扩大基极层的宽度,可成为光电变换效率高的太阳能电池。又,由于制造容易、制造良率高,可成为廉价的太阳能电池。
此时,配置于前述射极层上的基极集电电极的膜厚较佳为0.1~10μm。
如此地,若基极集电电极的膜厚为0.1~10μm,则基极集电电极与射极层的接触电阻依然高,不发生太阳能电池的特性降低,可成为特性良好的太阳能电池。
又,配置于前述射极层上的基极集电电极的宽度较佳为0.1~10μm。
如此地,若基极集电电极的宽度为0.1~10μm,则基极集电电极与射极层的接触电阻依然高,不发生太阳能电池的特性降低,可成为特性良好的太阳能电池。
另外,前述基极层较佳为在前述第一主表面中,配置于比前述射极层更凹陷的位置。
如此地,由于基极层配置于凹陷位置,可减小射极层上的基极集电电极的膜厚及宽度,可成为特性良好的太阳能电池。
还有,前述射极层较佳为在前述第一主表面中,配置于比前述基极层更凹陷的位置。
如此地,由于射极层配置于凹陷位置,可减小射极层上的基极集电电极的膜厚及宽度,可成为特性良好的太阳能电池。
又,本发明提供一种太阳能电池模块,其特征为内藏有上述的太阳能电池。
如此地,本发明的太阳能电池可内藏于太阳能电池模块中。
另外,本发明提供一种太阳能光发电***,其特征为具有上述的太阳能电池模块。
如此地,内藏有本发明的太阳能电池的太阳能电池模块可用于太阳能光发电***。
为了达成上述目的,本发明提供一种太阳能电池的制造方法,其是具有以下步骤的太阳能电池的制造方法:于具有第一导电型的半导体基板的第一主表面上,形成具有前述第一导电型的基极层、及邻接于前述基极层且具有与前述第一导电型相反的导电型的第二导电型的射极层的步骤,于前述基极层上形成基极集电电极的步骤;其特征为:于前述基极层上形成基极集电电极的步骤中,将前述基极集电电极的一部分亦形成在邻接于前述基极层的射极层上。
如此地,即使将基极集电电极的一部分亦形成在射极层上,基极集电电极与射极层的接触电阻也可维持高,故可增大基极集电电极的定位的容许度。因此,不需要为了防止电极的位置偏移而扩大基极层的宽度,可制造光电变换效率高的太阳能电池。又,可缩短电极的定位所需要的时间,提高生产性。
此时,较佳为将前述射极层上的基极集电电极的膜厚设为0.1~10μm。
如此地,若将基极集电电极的膜厚设为0.1~10μm,则基极集电电极与射极层的接触电阻依然高,不发生太阳能电池的特性降低,可制造特性良好的太阳能电池。
又,较佳为将前述射极层上的基极集电电极的宽度设为0.1~10μm。
如此地,若将基极集电电极的膜厚设为0.1~10μm,则基极集电电极与射极层的接触电阻依然高,不发生太阳能电池的特性降低,可制造特性良好的太阳能电池。
另外,较佳为使用网版印刷法来形成前述基极集电电极。
如此地,若为网版印刷法,则在电极形成方法中制造成本最便宜,可制造廉价的太阳能电池。又,于本发明的太阳能电池的制造方法中采用网版印刷法时,效果特别大。
发明的效果
若为本发明的太阳能电池,则可成为廉价且光电变换效率高的太阳能电池。又,通过本发明的太阳能电池的制造方法,可增大基极集电电极的定位的容许度,可一边提高生产性及制造良率,一边制造光电变换效率高的太阳能电池。
附图说明
图1是可适用本发明的从背面侧观看一般的背面电极型太阳能电池的概观图。
图2是可适用本发明的一般的背面电极型太阳能电池的剖面模型图。
图3是本发明的背面电极型太阳能电池的剖面模型图。
图4是显示本发明的背面电极型太阳能电池的基极区域与基极电极的位置关系的一例的上视模型图。
图5是显示本发明的背面电极型太阳能电池的制造方法的一例的流程图。
图6是本发明的背面电极型太阳能电池的剖面的电子显微镜照片。
图7是显示本发明的背面电极型太阳能电池的射极区域上的基极电极宽度平均值与光电变换效率的关系的图。
图8是本发明的太阳能电池模块的概观图。
图9是本发明的太阳能电池模块的背面内部模型图。
图10是本发明的太阳能电池模块的剖面模型图。
图11是本发明的太阳能光发电***的模型图。
具体实施方式
实施发明的形态
如上述,近年来太阳能电池的基极层与基极集电电极的位置偏移成为问题。本发明者们对于增大如此的位置偏移的容许度的对策,进行专心致力的检讨,而完成本发明。
以下,对于本发明,一边参照图式一边详细说明,但本发明不受此等所限定。
以下,以N型基板的情况为例,使用图3具体地说明本发明的太阳能电池的实施态样。图3是显示本发明的太阳能电池(背面电极型太阳能电池)的剖面构造的一例的模型图。图3中所示的太阳能电池100是于具有第一导电型(本实施态样中为N型)的半导体基板202的第一主表面(本实施态样中为背面)上,拥有具有第一导电型的基极层101、及邻接于基极层101且具有与第一导电型相反的导电型的第二导电型(本实施态样中为P型)的射极层102,至少于基极层101上具有基极集电电极313的太阳能电池,基极集电电极313的一部分亦配置于射极层102上,此射极层102邻接于配置有基极集电电极313的基极层101。
本发明的太阳能电池100的特征为基极电极313的一部分与邻接的射极层102接触。一般而言,由于若基极电极与射极层接触,则相当于将正极与负极予以短路,太阳能电池的特性应该会大幅降低。然而,本发明者们专心致力地研究,结果查明基极电极313与射极层102的接触电阻依赖于射极层102上的基极电极313的膜厚。即,若射极层102上的基极电极313的膜厚小,则接触电阻变大,而不影响太阳能电池的特性。更具体而言,射极层102上的基极电极313的膜厚较佳为0.1~10μm(0.1μm以上10μm以下)。若射极层102上的基极电极313的膜厚为10μm以下,则基极电极313与射极层102的接触电阻依然高,不发生太阳能电池的特性降低。图3中以308显示基极电极313与射极层102的接触部。
又,射极层102上的基极电极313的宽度较佳为0.1~10μm(0.1μm以上10μm以下)。若射极层102上的基极电极313的宽度为10μm以下,则基极电极313与射极层102的接触电阻依然高,不发生太阳能电池的特性降低。
此处,射极层102上的基极电极313的膜厚可用显微镜或电子显微镜等观察基板剖面而测定。又,射极层102上的基极电极313的宽度可用显微镜或电子显微镜等观察太阳能电池的剖面而测定。作为更简便的方法,可预先测定基极层101的宽度,从基板上面来观察基极电极313,通过运算而算出。还有,于电极形成后,由于基极区域的边界被电极所覆盖而无法看见,故无法通过从基板上面的观察来直接测定射极层102上的基极电极313的宽度。
图4(a)及(b)显示本发明的太阳能电池(背面电极型太阳能电池)的基极区域与基极电极的位置关系的一例的上视模型图。于图4(a)中,对于直线状的基极区域101,基极电极313偏移至上侧,与射极区域102接触。图4(a)的A-A’剖面的模型图相当于图3。本发明不限定于如此的直线状的基极区域形状,而对于如图4(b)中所示的点状的基极区域形状亦可适用。即,于图4(b)中对于点状的基极区域401,基极电极403偏移至右下侧,与射极区域402接触。图4(b)的B-B’剖面模型图相当于图3。此时,基极区域401与基极电极403的偏移量(配置于射极区域402上的基极电极403的宽度)成为基极区域401与基极电极403的偏移部的最大宽度。还有,于射极区域402上形成有射极电极404。
如使用图3及图4所说明,由于成为基极电极的一部分亦配置于射极区域上的构成,与基板导通的实质的基极电极宽度比实际形成的电极宽度更小。因此,例如可增大如印刷偏移的基极电极的位置偏移的容许度。
又,基极区域较佳为在第一主表面中,配置于比射极区域更凹陷的位置。若基极区域配置于比射极区域更凹陷的位置,则射极区域上的基极电极的膜厚容易比在基极区域上的基极电极的膜厚变小(参照后述的图6),射极区域上的基极电极的宽度亦容易变小。因此,可成为特性良好的太阳能电池。
另外,于太阳能电池的制程中,若交换N型杂质与P型杂质的扩散顺序等,则可成为在第一主表面中,射极区域配置于比基极区域更凹陷的位置的太阳能电池。若在如此构造的基极区域上印刷电极糊,则电极糊可通过表面张力而在阶差部某程度停留。因此,容易抑制印刷后立即的渗开或扩散,结果可容易形成射极区域上基极电极的宽度及膜厚为小者。因此,可成为特性良好的太阳能电池。
接着,说明本发明的太阳能电池的制造方法。本发明的太阳能电池的制造方法是具有以下步骤的太阳能电池的制造方法:于具有第一导电型的半导体基板的第一主表面上,形成具有第一导电型的基极层、及邻接于基极层且具有与第一导电型相反的导电型的第二导电型的射极层的步骤;与于基极层上形成基极集电电极的步骤,于基极层上形成基极集电电极的步骤中,将基极集电电极的一部分亦形成在邻接于基极层的射极层上的方法。以下,以使用N型基板作为半导体基板的情况为例,使用图5来说明本发明的太阳能电池的制造方法。
首先,准备半导体基板。例如,可如以下地准备半导体基板。于高纯度硅中掺杂如磷或砷、锑的V价元素,准备比电阻为0.1~5Ω·cm的原切割(as-cut)单晶{100}N型硅基板202(步骤(a)),使用浓度5~60%的如氢氧化钠或氢氧化钾的高浓度的碱或、氢氟酸与硝酸的混酸等,蚀刻表面的切割损伤(slice damage)。单晶硅基板可为通过CZ(Czochralski)法、FZ(Floating zone)法的任一方法制作者。基板202不一定必须是单晶硅基板,也可为多晶硅基板。
接着,于基板202的表面上进行被称为纹理(texture)的微小凹凸形成。纹理是使太阳能电池的反射率降低用的有效方法。纹理是通过在经加热的氢氧化钠、氢氧化钾、碳酸钾、碳酸钠、碳酸氢钠等的碱溶液(浓度1~10%,温度60~100℃)中,将基板202浸渍10分钟至30分钟左右而制作。于上述溶液中,使指定量的2-丙醇溶解,亦可促进反应。
于纹理形成后,于盐酸、硫酸、硝酸、氢氟酸等或此等的混合液的酸性水溶液中洗净。可混合过氧化氢而提高洁净度。
于此基板202的第一主表面上,形成射极层102(步骤(b))。射极层102是与基板202相反的导电型(此时P型),厚度为0.05~1μm左右。射极层102可通过使用BBr3等的气相扩散而形成。具体而言,将基板202以2片一组迭合的状态,载置于热处理炉中,导入BBr3与氧的混合气体,在950~1050℃热处理。作为载体气体,氮或氩为合适。又,将含有硼源的涂布剂涂布于第一主表面全面,以在950~1050℃热处理的方法亦可形成射极层102。作为涂布剂,例如可使用含有作为硼源的硼酸1~4%、作为增黏剂的聚乙烯醇0.1~4%的水溶液。
如果已形成射极层102,则将下一步骤的形成基极层用的屏蔽303形成在基板202的两主表面上(步骤(c))。作为屏蔽303,使用介电体膜的氧化硅膜或氮化硅膜等。若使用CVD法,则可通过适宜选择所导入的气体种类,而亦形成任何的膜。于氧化硅膜的情况,亦可将基板202予以热氧化而形成。当时,通过将基板202在氧环境中于950~1100℃热处理30分钟~4小时,而形成100nm左右的硅热氧化膜。此热处理亦可于上述的射极层102的形成用的热处理后,在同一批次内实施。
接着,部分地去除(开口)成为基极层101的区域部分的屏蔽,形成开口部304(步骤(d))。具体而言,可以开口部304的开口宽度为50μm以上250μm,开口部304之间的间隔为0.6mm以上2.0mm以下左右,开口成并行线状。于屏蔽303的开口中,可使用光微影法或以蚀刻糊化学地蚀刻的方法。又,亦可使用以激光或切割机等物理地开口的方法。
于屏蔽303中形成开口部304后,将基板202浸渍于经加热到50~90℃的KOH、NaOH等的碱水溶液中,去除开口部304不要的射极层102(蚀刻)(步骤(e))。由此,形成射极层经去除的开口部305。
随后,形成基极层101(步骤(f))。于基极层101的形成中,可使用采用***的气相扩散法。在830~950℃,于***与氮及氧混合气体环境下,热处理基板202,可形成成为基极层101的磷扩散层(N+层)。除了气相扩散法,还有旋转涂布含磷的材料,或一边印刷一边热处理的方法,亦可形成基极层101。于基极层101的形成后,以氢氟酸等去除在屏蔽303及表面上所形成的玻璃。
接着,在与第一主表面相反的主表面的第二主表面上,进行抗反射膜307的形成(步骤(g))。作为抗反射膜307,可利用氮化硅膜或氧化硅膜等。于氮化硅膜的情况,使用等离子CVD装置,以约100nm的膜厚制膜。作为反应气体,多混合单硅烷(SiH4)及氨(NH3)而使用,但亦可使用氮代替NH3。又,为了制程压力的调整、反应气体的稀释以及在基板使用多晶硅时促进基板的整体钝化效果,亦可在反应气体中混合氢。另一方面,于氧化硅膜的情况,亦可用CVD法形成,但通过热氧化法而得的膜得到高的特性。
于第一主表面,亦可利用氮化硅膜或氧化硅膜作为背面保护膜207。背面保护膜207的膜厚宜为50~250nm。与第二主表面(受光面)侧同样地,于氮化硅膜的情况以CVD法,于氧化硅膜的情况以热氧化法或CVD法,可形成背面保护膜207。又,为了提高表面的保护效果,亦可于基板表面上预先形成氧化铝膜后,形成氮化硅膜或氧化硅膜等。
接着,沿着基极层101形成电极。此电极形成可如以下地进行。例如以网版印刷法形成基极电极313(步骤(h))。例如,可准备具有开口宽度为30μm以上100μm以下、0.6~2.0mm间隔的并行线图型的制版,将Ag粉末与玻璃料与有机物黏结剂混合成的Ag糊沿着基极层101印刷。
一般而言,基极层与基极电极的定位不容易。其理由是因为基极区域加工时的位置偏移、电极印刷时的位置偏移、版的伸展等的偏移主要因素复合而形成电极。然而,通过本发明的太阳能电池的制造方法,即使在射极层102上形成基极电极313的一部分,也不影响太阳能电池的特性。特别地,若射极层102上的基极电极313的膜厚小,则接触电阻仍然大,不影响太阳能电池的特性。具体而言,射极层102上的基极电极的膜厚较佳为0.1~10μm。又,射极层102上的基极电极的宽度较佳为0.1~10μm。由于采取以上的构造,与基板导通的实质的基极电极的宽度比实际形成的基极电极313的宽度更小,可增大印刷偏移的容许度。又,网版印刷法由于在制版的伸展量具有面内分布,在半导体基板的面内,于基极集电电极与基极层的位置关系上容易发生偏差,应用于本发明的太阳能电池的制造方法时效果特别大。
再者,通过上述方法,由于在将屏蔽303开口后进行蚀刻,基极区域101形成在比射极区域102更凹陷的位置。因此,射极区域102上的基极电极的膜厚必然比基极区域101上的基极电极的膜厚较小。图6中显示其一例。图6是经过上述的步骤所形成的基极电极附近的剖面的电子显微镜照片。可知射极区域上的膜厚t2比基极区域上的膜厚t1更小。
又,对于上述方法,若以交换磷扩散与硼扩散的顺序等的方法形成基极层及射极层,则射极区域形成在比基极区域凹陷的位置。若在此构造的基极区域上印刷电极糊,则电极糊可通过表面张力而在阶差部某程度停留。因此,容易抑制印刷后立即的渗开或扩散,结果可容易形成射极区域上基极电极的宽度及膜厚小的太阳能电池。
于基极电极313的形成后,印刷Ag糊作为射极电极104。基极电极313用Ag糊与射极电极104用Ag糊可相同,也可使用不同者。于以上的电极印刷之后,通过热处理而使Ag粉末贯穿(火贯穿)氮化硅膜等,导通电极与在其下方的硅。还有,基极电极313及射极电极104的烧成亦可各自进行。烧成通常在700~850℃以下的温度,进行1~5分钟处理。
以上,于例子中叙述N型基板的情况,但P型基板的情况只要于射极层形成中使磷、砷、锑等扩散,于基极层形成中使硼、Al等扩散即可,不言而喻可在本发明的太阳能电池的制造方法及太阳能电池中采用P型基板。
上述本发明的太阳能电池可内藏于太阳能电池模块中。图8中显示内藏有本发明的太阳能电池的太阳能电池模块的一例的概观。图8中,显示内藏有背面电极型的太阳能电池的太阳能电池模块的示例,但不受此所限定,亦可成为内藏有本发明的其他类型的太阳能电池的太阳能电池模块。上述本发明的太阳能电池800是形成在太阳能电池模块860内铺满成瓷砖状的构造。
于太阳能电池模块860内,邻接的太阳能电池800彼此是数片~数10片电性串联连接,构成被称为串行(string)的串行电路。图9中显示串行的概观。图9是相当于通常人眼不接触的模块内部背面侧的模型图。又,指状电极或总线未图标。为了串联连接,如图9中所示,邻接的太阳能电池800的P总线(与接合于基板的P型层的指状电极所连接的总线电极)与N总线(与接合于基板的N型层的指状电极所连接的总线电极)彼此以跳接引线861等连接。
图10中显示太阳能电池模块860的剖面模型图。如上述,串行是将多个太阳能电池800以引线861连接至总线电极822而构成。该串行通常被EVA(乙烯-乙烯乙酸酯)等的透光性填充剂872所密封,非受光面侧被PET(聚对苯二甲酸乙二酯)等的耐候性树脂薄膜873所覆盖,受光面被钠钙玻璃等的透光性且机械强度强的受光面保护材料871所覆盖。作为填充剂872,除了上述EVA,还可使用聚烯烃、聚硅氧等。
再者,亦可使用此模块来制造及构成太阳能光发电***。图11中显示链接有本发明的模块的太阳能光发电***的基本构成。多个太阳能电池模块16以配线15串联连结,经由变换器17将发电电力供给至外部负载电路18。虽然于图11中未显示,但是该***亦可进一步具备将所发电的电力予以蓄电的2次电池。
实施例
以下,显示实施例及比较例来更具体地说明本发明,但本发明不受此等所限定。
(实施例)
使用本发明的太阳能电池的制造方法,进行太阳能电池的制作。首先,准备多数的厚度200μm、比电阻1Ω·cm的磷掺杂{100}N型原切割硅基板。其次,通过热浓氢氧化钾水溶液去除该硅基板的损伤层。然后,浸渍于72℃的氢氧化钾/2-丙醇水溶液中进行纹理形成,接着于经加热到75℃的盐酸/过氧化氢混合溶液中进行洗净。
接着,于基板上形成P型扩散层(射极层)。将基板以2片一组迭合的状态,载置于热处理炉中,导入BBr3与氧与氩的混合气体,在1000℃进行10分钟热处理。以四探针法测定在基板上形成的P型扩散层,结果片电阻为50Ω。
将此基板在1000℃、氧环境中热氧化3小时,而于基板表面上形成屏蔽。以激光将基板的背面的屏蔽予以开口。激光源使用Nd:YVO4的二次谐波,开口图形是间隔为1.2mm的并行线状。将形成有开口部的基板浸渍80℃的KOH水溶液中,而去除其开口部的射极层。
接着,于***环境下,在870℃于基板的受光面彼此迭合的状态下热处理40分钟,而在开口部形成磷扩散层(基极层)。然后,通过将该基板浸渍于浓度12%的氢氟酸中,而去除屏蔽及表面玻璃。
于以上的处理后,使用等离子CVD装置,在基板的两面上形成氮化硅膜。氮化硅膜的膜厚是表面背面皆为100nm。于此时间点,从上方以显微镜观察基板,测定基极层的宽度。测定多个基板,结果基极层的宽度皆约190μm。
接着,将Ag糊印刷于基极层上及干燥。此时,使印刷的基准位置一点一点地变化,故意错开基极区域与基极电极而印刷。又,为了同时地确认膜厚的影响,准备(1)制版的网目325、乳剂厚30μm、(2)制版的网目325、乳剂厚15μm、(3)制版的网目500、乳剂厚5μm的3种类制版,分别印刷。
最后,于射极层上印刷Ag糊及干燥,将此在780℃的空气环境下烧成。
对于如以上所得的太阳能电池的样品,使用山下电装股份有限公司制太阳光仿真器,于AM1.5光谱、照射强度100mW/cm2、25℃的条件下,测定电流电压特性而求得光电变换效率。又,从上方以显微镜观察基板,使用先前测定的基极层宽度190μm,算出射极层上的基极电极宽度。观察基板每1片9点,将其平均值当作基板的代表值。膜厚以电子显微镜观察基板剖面而测定。
图7中显示经由以上方法所得的数据的射极层上的基极电极宽度平均值与光电变换效率的关系。于所制作的全部太阳能电池中,得到20.4%以上的光电变换效率。再者,当射极层上的基极电极的膜厚为小到4μm时,于射极层上的基极电极的宽度为15μm之前,光电变换效率不降低。又,当射极层上的基极电极的膜厚为9.8μm时,于射极层上的基极电极的宽度为10μm附近之前,光电变换效率几乎没有降低。再者,当射极层上的基极电极的膜厚为13.4μm时,即使比较小的偏移也看见光电变换效率的降低。若射极层上的基极电极的膜厚为10μm左右,则在射极区域上的基极电极宽度为10μm左右以下时,光电变换效率几乎没有降低。
还有,本发明不受上述实施形态所限定。上述实施形态为例示,具有与本发明的发明申请专利范围中记载的技术思想实质上相同的构成,达成同样的作用效果者,任何者皆包含于本发明的技术范围内。
Claims (11)
1.一种太阳能电池,其是于具有第一导电型的半导体基板的第一主表面上,拥有具有前述第一导电型的基极层,及邻接于前述基极层且具有与前述第一导电型相反的导电型的第二导电型的射极层,至少于前述基极层上具有基极集电电极的太阳能电池,其特征在于:
前述基极集电电极的一部分亦配置于前述射极层上,此射极层邻接于配置有该基极集电电极的前述基极层。
2.根据权利要求1所述的太阳能电池,其中配置于前述射极层上的基极集电电极的膜厚为0.1~10μm。
3.根据权利要求1或2所述的太阳能电池,其中配置于前述射极层上的基极集电电极的宽度为0.1~10μm。
4.根据权利要求1~3中任一项所述的太阳能电池,其中前述基极层于前述第一主表面中,配置于比前述射极层更凹陷的位置。
5.根据权利要求1~3中任一项所述的太阳能电池,其中前述射极层在前述第一主表面中,配置于比前述基极层更凹陷的位置。
6.一种太阳能电池模块,其特征在于,内藏有根据权利要求1~5中任一项所述的太阳能电池。
7.一种太阳能光发电***,其特征在于,具有根据权利要求6所述的太阳能电池模块。
8.一种太阳能电池的制造方法,其是具有以下步骤的太阳能电池的制造方法:
于具有第一导电型的半导体基板的第一主表面上,形成具有前述第一导电型的基极层,及邻接于前述基极层且具有与前述第一导电型相反的导电型的第二导电型的射极层的步骤,与
于前述基极层上形成基极集电电极的步骤;
其特征在于:
于前述基极层上形成基极集电电极的步骤中,将前述基极集电电极的一部分亦形成在邻接于前述基极层的射极层上。
9.根据权利要求8所述的太阳能电池的制造方法,其中将前述射极层上的基极集电电极的膜厚设为0.1~10μm。
10.根据权利要求8或9所述的太阳能电池的制造方法,其中将前述射极层上的基极集电电极的宽度设为0.1~10μm。
11.根据权利要求8~10中任一项所述的太阳能电池的制造方法,其中使用网版印刷法,形成前述基极集电电极。
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EP3336905B1 (en) | 2020-12-02 |
CN110121787B (zh) | 2022-10-14 |
JP6181903B1 (ja) | 2017-08-16 |
TW201817021A (zh) | 2018-05-01 |
EP3336905A4 (en) | 2018-11-21 |
US20180315876A1 (en) | 2018-11-01 |
KR102570365B1 (ko) | 2023-08-23 |
TWI649887B (zh) | 2019-02-01 |
EP3336905A1 (en) | 2018-06-20 |
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