CN110118615B - Method for calculating highest temperature of shell of power chip - Google Patents
Method for calculating highest temperature of shell of power chip Download PDFInfo
- Publication number
- CN110118615B CN110118615B CN201910435571.0A CN201910435571A CN110118615B CN 110118615 B CN110118615 B CN 110118615B CN 201910435571 A CN201910435571 A CN 201910435571A CN 110118615 B CN110118615 B CN 110118615B
- Authority
- CN
- China
- Prior art keywords
- power
- temperature
- chip
- calculating
- power chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a method for calculating the highest temperature of a shell of a power chip, which comprises the following steps: step S1, providing a testing environment, and arranging a temperature measurer in the heat sink in the testing environment; step S2, calculating a first power consumption of the power chip in the first power mode and a first temperature corresponding to the first power consumption measured by the temperature measurer, and calculating a second power consumption of the power chip in the second power mode and a second temperature corresponding to the second power consumption measured by the temperature measurer; step S3, calculating the thermal resistance of the heat sink according to the difference between the first temperature and the second temperature, the first power consumption and the second power consumption and a first formula; and step S4, calculating the highest shell temperature of the power chip according to a second formula according to the heat value and the maximum power consumption. The invention has the advantages of saving estimation time, improving production efficiency and reducing production cost.
Description
Technical Field
The invention relates to the technical field of chips, in particular to a method for calculating the highest temperature of a shell of a power chip.
Background
In order to ensure stable operation of a system, in current electronic devices, a cooling process is usually performed on a chip with relatively high power consumption (such as an SOC main chip, a PowerIC, and the like) through a heat sink, and increasing the use of the heat sink increases the cost, but reducing the use of the heat sink increases the risk of system stability, so how to quickly estimate the heat resistance of the heat sink becomes an urgent problem to be solved.
In the prior art, the following two methods are used to calculate the heat dissipation fins:
the first method is as follows: simulation calculation is carried out on the thermal resistance of the radiating fin required by the power chip through a simulation tool, however, each influence parameter needs to be collected when the simulation calculation is carried out, and the whole simulation calculation process is complicated, time-consuming and labor-consuming; particularly, when simulation calculation is needed to be carried out on a plurality of products and different series of the same product, the calculation process is too complicated; and the requirement of the simulation calculation on the calculation place is too high, and the test cost is greatly increased.
The second method comprises the following steps: calculating the thermal resistance of the heat sink by a formula TCmax (Tj-PD) (theta jc + theta cs + theta sa), and continuously modifying and/or cutting the shape and the size of the heat sink according to the thermal resistance to further measure the highest temperature of the shell of the chip and ensure that the actually tested shell temperature of the chip is less than the highest temperature of the shell of the chip;
wherein TCmax is used for representing the highest temperature of a shell of a power chip, Tj is used for representing the temperature of an internal node of the power chip, PD is used for representing consumed power, theta jc is used for representing the thermal resistance from the node of the power chip to the shell, theta cs is used for representing the thermal resistance from the shell of the power chip to the heat sink, and theta sa is used for representing the thermal resistance of the heat sink;
however, the above method has the following problems:
problem one, the calculated highest temperature of the chip case has poor accuracy, which is due to the following reasons: the TCmax value calculated in the standard rule (spec) is obtained by simulation calculation under a standard PCB and a standard laboratory environment, but the size of the PCB of the main board in practical application and the heat dissipation environment of the structure of a product in practical use have little difference, so that the calculated TCmax value has errors;
problem two, the test position of the chip is not determined, but the test position of the chip may cause the TCmax value to be different, for example, the edge temperature of the chip is generally lower than the center point temperature.
Therefore, the above-mentioned method can avoid the above problem by increasing the derating margin (i.e. the size of the heat sink is increased, and the margin is increased to 10% -30% in practical items), but the increase of the derating margin causes the cost of the heat sink to increase.
Disclosure of Invention
In view of the above problems in the prior art, a method for calculating the maximum temperature of the casing of the power chip is provided to save the estimation time, improve the production efficiency and reduce the production cost.
The specific technical scheme is as follows:
a method for calculating the highest temperature of a shell of a power chip is applied to electronic equipment, wherein the electronic equipment comprises the power chip and a radiating fin arranged above the power chip;
the calculation method comprises the following steps:
step S1, providing a testing environment, and arranging a temperature measurer in the heat sink in the testing environment;
step S2, calculating a first power consumption of the power chip in the first power mode, and the temperature measurer measuring a first temperature corresponding to the first power consumption, and
calculating second consumption power of the power chip in a second power mode, and measuring a second temperature corresponding to the second consumption power by using a temperature measurer;
step S3, calculating the thermal resistance of the heat sink according to a first formula according to the difference between the first temperature and the second temperature, the first power consumption and the second power consumption;
in step S4, the maximum case temperature of the power chip is calculated according to a second formula based on the thermal value and a maximum power consumption.
Preferably, the calculation method is such that the maximum case temperature of the power chip is calculated, the maximum case temperature of which is the same for a plurality of pieces of configuration information of the electronic device, and an average value thereof is calculated as the optimum maximum case temperature of the power chip.
Preferably, the calculating method, wherein the step S1 specifically includes the following steps:
step S11, providing a test environment;
step S12, arranging a mounting hole on the heat sink in a test environment;
in step S13, the temperature measuring instrument is set in the mounting hole.
Preferably, the calculation method is that the temperature measuring device in step S13 is fixedly disposed in the mounting hole by a heat conductive adhesive.
Preferably, the calculation method, wherein the first formula is:
θsa＝(TS2-TS1)/P2-P1；
where θ sa is used to represent the thermal resistance of the heat sink;
TS1 for indicating a first temperature;
TS2 for indicating a second temperature;
p1 is used to represent the first consumed power;
p2 is used to indicate the second consumption power.
Preferably, the calculation method, wherein the second formula is:
TCmax＝Tj-Pmax(θjc+θcs+θsa)；
wherein TCmax is used to represent the maximum temperature of the casing of the power chip;
tj is used for representing the internal node temperature of the power chip;
pmax is used to represent the maximum power consumed;
θ jc is used to represent the thermal resistance from the junction of the power chip to the housing;
θ cs is used to represent the thermal resistance between the housing of the power chip and the heat sink.
Preferably, the method of calculating, wherein the power chip is provided with a plurality of power supplies.
Preferably, the calculation method includes calculating the individual power consumption of the current and the voltage of each power supply by the power chip in the first power mode, and superposing the individual power consumption of each power supply to obtain the first power consumption; and/or
The power chip calculates the independent power consumption of the current and the voltage of each power supply in a second power mode, and superposes the independent power consumption of each power supply to obtain second power consumption; and/or
The power chip calculates the individual consumed power of the current and the voltage of each power supply in the maximum power mode, and superposes the individual consumed power of each power supply to obtain the maximum consumed power.
Preferably, the computing method wherein the power chip is a system chip provided with a processor.
Preferably, the computing method wherein the frequency of the processor in the first power mode is 500 MHz; and/or
The frequency of the processor in the second power mode is 2 GHz.
The technical scheme has the following advantages or beneficial effects: the thermal resistance of the radiating fin is obtained by calculating the power consumption according to a first formula, and then the highest temperature of the shell of the power chip is obtained by calculating according to a second formula, so that the estimation time is saved, the production efficiency is improved, and the production cost is reduced.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a flow chart of an embodiment of a method for calculating a maximum temperature of a housing of a power chip according to the present invention;
fig. 2 is a flowchart of step S1 of the method for calculating the maximum temperature of the package of the power chip according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The invention comprises a method for calculating the highest temperature of a shell of a power chip, which is applied to electronic equipment, wherein the electronic equipment comprises the power chip and a radiating fin arranged above the power chip;
as shown in fig. 1, the calculation method includes the steps of:
step S1, providing a testing environment, and arranging a temperature measurer in the heat sink in the testing environment;
step S2, calculating a first power consumption of the power chip in the first power mode, and the temperature measurer measuring a first temperature corresponding to the first power consumption, and
calculating second consumption power of the power chip in a second power mode, and measuring a second temperature corresponding to the second consumption power by using a temperature measurer;
step S3, calculating the thermal resistance of the heat sink according to a first formula according to the difference between the first temperature and the second temperature, the first power consumption and the second power consumption;
in step S4, the maximum case temperature of the power chip is calculated according to a second formula based on the thermal value and a maximum power consumption.
In the embodiment, the thermal resistance of the radiating fin can be calculated according to the first formula of the consumed power, and then the highest temperature of the shell of the power chip is calculated, so that the estimation time is saved, the production efficiency is improved, and the production cost is reduced.
In the embodiment, the maximum temperature of the shell can be obtained through calculation only by calculating the consumed power in each power mode and measuring the corresponding temperature, so that a user does not need to use a special simulation tool, the estimation time is further saved, and the production efficiency is improved.
As a preferred embodiment, a System On Chip (SOC) of the set top box or the smart tv may be used as the power Chip;
therefore, the highest temperature of the shell of the system chip can be calculated by estimating the thermal resistance of the radiating fin above the system chip of the set top box or the smart television; the method does not need to use a professional simulation tool, so that the operability is increased, the power consumption of elements except the system chip is reduced to the lowest point, the power consumption of the elements except the system chip can be ignored, the testing efficiency is improved, the stability of a product is ensured on the basis of reducing the measuring error through multiple times of measurement and margin increase, and the accuracy of the thermal resistance and the TCmax value of the radiating fin is improved.
Further, in the above-described embodiment, the case maximum temperature of the power chip, at which the plurality of pieces of configuration information of the electronic device coincide, is calculated, and the average value thereof is calculated as the optimum case maximum temperature of the power chip.
In the above embodiment, the information of the plurality of set top boxes or smart televisions can be recorded, and the set top boxes or smart televisions with the same information are used for testing, so that different reduced calculation accuracies of the set top boxes or smart televisions are avoided.
Further, as a preferred embodiment, three set top boxes or smart televisions can be used for testing, the highest temperature of the shell of the power chip corresponding to each set top box or smart television is obtained, the average value of the three highest temperatures of the shell is taken, and then, a margin of 5% is increased on the basis of the average value, so that the stability of the product is ensured on the basis of reducing the measurement error, and further, the thermal resistance of the heat sink and the accuracy of the TCmax value are improved.
Further, in the above embodiment, as shown in fig. 2, step S1 specifically includes the following steps:
step S11, providing a test environment;
step S12, arranging a mounting hole on the heat sink in a test environment;
in step S13, the temperature measuring instrument is set in the mounting hole.
The test environment comprises:
ambient temperature: may be 25 degrees celsius;
environmental conditions: natural ventilation can be adopted;
and (3) system testing: default system settings, such as when the test board is a set-top box or a smart television, the system can stay in the home interface;
the influence of environmental temperature and conditions can be eliminated, the power consumption of elements except the power chip can be reduced to the lowest point by setting default system setting, so that the power consumption of the elements except the power chip can be ignored, the test efficiency is improved, the stability of a product is ensured on the basis of reducing measurement errors by measuring for multiple times and increasing margin, and the calculation accuracy is improved.
Further, in the above embodiment, the temperature measuring device in step S13 is fixedly disposed in the mounting hole by a heat conductive adhesive. Good contact between the temperature measuring probe and the power chip is realized.
Further, in the above embodiment, the first formula is:
θsa＝(TS2-TS1)/P2-P1；
where θ sa is used to represent the thermal resistance of the heat sink;
TS1 for indicating a first temperature;
TS2 for indicating a second temperature;
p1 is used to represent the first consumed power;
p2 is used to indicate the second consumption power.
Further, in the above embodiment, the second formula is:
TCmax＝Tj-Pmax(θjc+θcs+θsa)；
wherein TCmax is used to represent the maximum temperature of the casing of the power chip;
tj is used for representing the internal node temperature of the power chip;
pmax is used to represent the maximum power consumed;
θ jc is used to represent the thermal resistance from the junction of the power chip to the housing;
θ cs is used to represent the thermal resistance between the housing of the power chip and the heat sink.
Further, in the above-described embodiment, the power chip is provided with a plurality of power supplies.
Further, in the above embodiment, the power chip calculates the individual consumed power of the current and the voltage of each power supply in the first power mode, and superimposes the individual consumed power of each power supply to obtain the first consumed power; and/or
The power chip calculates the independent power consumption of the current and the voltage of each power supply in a second power mode, and superposes the independent power consumption of each power supply to obtain second power consumption; and/or
The power chip calculates the individual consumed power of the current and the voltage of each power supply in the maximum power mode, and superposes the individual consumed power of each power supply to obtain the maximum consumed power.
In the embodiment, the power chip can work in different power modes through a serial port tool; and calculating corresponding consumed power in different power consumption modes by testing the current and voltage of each power supply of the power chip in different power consumption modes, and further calculating the temperature of the radiating fin above the central point position of the power chip in the power consumption mode so as to perform further calculation.
Further, in the above-described embodiment, the power chip is a system chip provided with a processor.
Further, in the above embodiment, the frequency of the processor in the first power mode may be 500 MHz; and/or
The frequency of the processor in the second power mode may be 2 GHz.
Wherein, the frequency of the processor in the maximum power mode can also be 2 GHz.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A method for calculating the highest temperature of a shell of a power chip is applied to electronic equipment, wherein the electronic equipment comprises the power chip and a radiating fin arranged above the power chip;
the calculation method is characterized by comprising the following steps:
step S1, providing a testing environment, and setting a temperature measurer in the heat sink in the testing environment;
step S2, calculating a first consumption power of the power chip in the first power mode, and the temperature measurer measuring a first temperature corresponding to the first consumption power, and
calculating a second power consumption of the power chip in a second power mode, and the temperature measurer measures a second temperature corresponding to the second power consumption;
step S3, calculating the thermal resistance of the heat sink according to a first formula according to the difference between the first temperature and the second temperature, the first power consumption and the second power consumption;
step S4, calculating the highest temperature of the shell of the power chip according to a second formula and the thermal resistance and the maximum power consumption;
the first formula is:
θsa＝(TS2-TS1)/P2-P1；
wherein θ sa is used to represent the thermal resistance of the heat sink;
TS1 for indicating a first temperature;
TS2 for indicating a second temperature;
p1 is used to represent the first consumed power;
p2 is for indicating the second consumption power;
the second formula is:
TCmax＝Tj-Pmax(θjc+θcs+θsa)；
wherein TCmax is used to represent the maximum temperature of the casing of the power chip;
tj is used for representing the internal node temperature of the power chip;
pmax is used to represent the maximum power consumption;
θ jc is used to represent the thermal resistance from the junction of the power chip to the housing;
θ cs is used to represent the thermal resistance between the housing of the power chip to the heat sink.
2. The method of calculating the maximum case temperature of a power chip according to claim 1, wherein the maximum case temperature of the power chip in which a plurality of pieces of configuration information of the electronic device are identical is calculated, and an average value thereof is calculated as the optimum maximum case temperature of the power chip.
3. The method for calculating the maximum temperature of the package of the power chip as claimed in claim 1, wherein the step S1 specifically includes the steps of:
step S11, providing a test environment;
step S12, disposing a mounting hole on the heat sink in the test environment;
step S13, the temperature measuring instrument is set in the mounting hole.
4. The method for calculating the maximum temperature of the package of the power chip as claimed in claim 3, wherein the temperature measuring unit in step S13 is fixedly disposed in the mounting hole by a thermally conductive adhesive.
5. The method of calculating the maximum temperature of the package of the power chip as set forth in claim 1, wherein the power chip is provided with a plurality of power supplies.
6. The method for calculating the maximum temperature of the package of the power chip as claimed in claim 5, wherein the power chip calculates the individual power consumption of the current and the voltage of each power source in the first power mode, and adds the individual power consumption of each power source to obtain the first power consumption; and/or
The power chip calculates the independent power consumption of the current and the voltage of each power supply in a second power mode, and superposes the independent power consumption of each power supply to obtain second power consumption; and/or
And the power chip calculates the independent power consumption of the current and the voltage of each power supply in the maximum power mode, and superposes the independent power consumption of each power supply to obtain the maximum power consumption.
7. The method of calculating the maximum temperature of the package of the power chip as set forth in claim 1, wherein the power chip is a system chip provided with a processor.
8. The method of calculating the maximum temperature of the package of the power chip as claimed in claim 7, wherein the frequency of the processor in the first power mode is 500 MHz; and/or
The frequency of the processor in the second power mode is 2 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910435571.0A CN110118615B (en) | 2019-05-23 | 2019-05-23 | Method for calculating highest temperature of shell of power chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910435571.0A CN110118615B (en) | 2019-05-23 | 2019-05-23 | Method for calculating highest temperature of shell of power chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110118615A CN110118615A (en) | 2019-08-13 |
| CN110118615B true CN110118615B (en) | 2020-12-29 |
Family
ID=67523128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910435571.0A Active CN110118615B (en) | 2019-05-23 | 2019-05-23 | Method for calculating highest temperature of shell of power chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110118615B (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030074173A1 (en) * | 2001-10-17 | 2003-04-17 | Intel Corporation | Technique for defining probabilistic reliability test requirements |
| US20080234953A1 (en) * | 2007-03-22 | 2008-09-25 | Ignowski James S | Power estimation for a semiconductor device |
| CN101598750A (en) * | 2008-06-03 | 2009-12-09 | 优仪半导体设备(深圳)有限公司 | A kind of measuring method of chip power-consumption |
| CN101881741B (en) * | 2009-05-08 | 2013-04-24 | 清华大学 | One-dimensional material thermal conductivity measurement method |
| CN102081058B (en) * | 2009-11-30 | 2013-01-30 | 英业达股份有限公司 | Method for testing performance of heat dissipation module |
| CN102081057B (en) * | 2009-11-30 | 2013-01-30 | 英业达股份有限公司 | Method for calculating equivalent thermal resistance value of radiation module |
| CN108008277A (en) * | 2018-01-16 | 2018-05-08 | 西华大学 | A kind of tetra- resistance detection device of heat of LED and its computational methods |
| CN108896200B (en) * | 2018-07-27 | 2019-10-11 | 北京金风科创风电设备有限公司 | Method, device, equipment and medium for detecting temperature of power module of converter |
| CN109186795A (en) * | 2018-09-07 | 2019-01-11 | 江苏中科君芯科技有限公司 | The evaluation method of IGBT module shell temperature |
-
2019
- 2019-05-23 CN CN201910435571.0A patent/CN110118615B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110118615A (en) | 2019-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107192934B (en) | Method for measuring incrustation transient thermal impedance of high-power IGBT | |
| US10178763B2 (en) | Warpage mitigation in printed circuit board assemblies | |
| CN102608511B (en) | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube | |
| US10260961B2 (en) | Integrated circuit packages with temperature sensor traces | |
| CN110673015B (en) | Test method for simulating heating power and surface temperature of chip | |
| JPH11220078A (en) | Thermal resistance calculation method of semiconductor package, storage medium, and thermal resistance-calculating device | |
| CN102759544B (en) | Method for testing thermal resistance of high-power silicon carbide diode | |
| Górecki et al. | New method of measurements transient thermal impedance and radial power of power LEDs | |
| CN103870612B (en) | A kind of system and method obtaining IGBT device thermal resistance | |
| CN103175861A (en) | Junction-to-case thermal resistance testing method | |
| Yang et al. | A temperature-dependent Cauer model simulation of IGBT module with analytical thermal impedance characterization | |
| CN203414568U (en) | Thermal resistance testing device of power semiconductor device | |
| CN110118615B (en) | Method for calculating highest temperature of shell of power chip | |
| CN110824243A (en) | Device and method for measuring power consumption of chip | |
| CN203773016U (en) | Apparatus for testing thermal resistance of SMD-0.5 packaging power semiconductor device | |
| US6825651B2 (en) | Test method for characterizing currents associated with powered components in an electronic system | |
| Zhao et al. | Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions | |
| CN214473738U (en) | Device for measuring thermal resistance of semiconductor chip | |
| CN104582426A (en) | Modularized heat dissipation source device, thermal resistance measurement system with same and measurement method | |
| CN115575787A (en) | IGBT module health state monitoring method and device | |
| Nakamura et al. | Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200° C | |
| CN111103319B (en) | Health state monitoring method for heat-conducting silicone grease and cooling fan | |
| CN112285518A (en) | Simulation test method and system for thermal resistance of LED in module | |
| CN113720874B (en) | Microwave product thermal simulation method based on soldering tin thermal conductivity test | |
| Sitta et al. | Experimental-numerical characterization of maximum current capability in Si-based surface mounted power devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |