CN110106492A - Quickly prepare the method for vertical graphene - Google Patents
Quickly prepare the method for vertical graphene Download PDFInfo
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- CN110106492A CN110106492A CN201910367340.0A CN201910367340A CN110106492A CN 110106492 A CN110106492 A CN 110106492A CN 201910367340 A CN201910367340 A CN 201910367340A CN 110106492 A CN110106492 A CN 110106492A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Abstract
The present invention relates to the methods that one kind quickly prepares vertical graphene, comprising the following steps: (1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit；(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum；(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 10-80sccm, open radio-frequency power supply and DC power supply, adjust radio-frequency power supply rf frequency be 2MHz-60 MHz, radio-frequency power 300-5000W, adjust DC power supply make axial magnetic field strength 100-10000 Gs；(4) continue to be passed through Ar, the flow of Ar is 10-80sccm, while being passed through CH in Helicon wave plasma chemical vapor deposition unit4, CH4Flow be 50-200sccm, on substrate deposited vertical graphene.Preparation step of the present invention is simple, wide to the scope of application of substrate without heating, can deposit the vertical graphene of different shape on substrate, and preparation speed is fast, and preparation quality is high, and is convenient for practical application.
Description
Technical field
The present invention relates to a kind of vertical graphenes, more particularly to a kind of method for quickly preparing vertical graphene.
Background technique
Vertical graphene (Vertically-oriented graphene, vertically oriented graphene) is also known as carbon nanowalls
(Carbon nanowalls, CNWs), carbon nanosheet (Carbon nanosheets), is a kind of multi-layer graphene free-standing
The two dimension with edge being formed on the substrate is carbon nano-structured.In this configuration, single vertical graphene film has 0.1 to arrive
The width and height of some tens of pm, but thickness only has several nanometers to be even lower than 1nm.Each graphene film includes several layers of graphite
Alkene, the number of plies is between 1~10, the about 0.34nm to 0.35nm of spacing between layers.
Vertical graphene has unique architectural characteristic: isolated nano flake, similar to the standing upright of labyrinth appearance
Nm wall, the porous class film of height cladodification.Possess new application multi-field.Such as: electronic emitter needs thin side
The interval of edge and appropriateness；Membrane filter needs the honeycomb structure of controllable spacing.Furthermore: low orientated fine and close high surface area
Vertical graphene film may be used as gas storage material.
Domestic and international multiple research groups have carried out the research of vertical grapheme material, put respectively with different plasmas
Electric mode, comprising: microwave plasma enhanced chemical vapor deposition, inductively coupled plasma body enhance chemical vapor deposition
(ICPECVD), the capacitively coupled plasma with free radical injection enhances chemical vapor deposition (CCPE-CVD), hydroperoxyl radical
Radio frequency plasma enhancing chemical vapor deposition (RF-PECVD) is injected, very high frequency plasma enhancingization is penetrated in hydroperoxyl radical injection
Learn vapor deposition (VHF-PECVD), electron-beam excitation plasma enhanced chemical vapor deposition (EBEPECVD), hot-wire chemical gas
Mutually deposition (HF-CVD), atmospheric pressure plasma, sputter.But existing method that there are sedimentation times is long, need to substrate into
Row heating, a large amount of time, complex for operation step is not only wasted to silicon, but also for some thermally sensitive substrates
For, it can not be deposited, so that the narrow range that substrate can select.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, provide a kind of method for quickly preparing vertical graphene.
In order to achieve the above objectives, the technical solution adopted by the present invention are as follows: a method of vertical graphene is quickly prepared, is wrapped
Include following steps:
(1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit；
(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum；
(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 10-80sccm, opens radio frequency
Power supply and DC power supply, the rf frequency for adjusting radio-frequency power supply is 2MHz-60 MHz, radio-frequency power 300-5000W, is adjusted straight
Galvanic electricity source makes axial magnetic field strength 100-10000 Gs；
(4) continue to be passed through Ar, the flow of Ar is 10-80sccm, while in Helicon wave plasma chemical vapor deposition unit
It is passed through CH4, CH4Flow be 50-200sccm, on substrate deposited vertical graphene.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (2)
In, base vacuum is 2 × 10-6Torr。
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (3)
In, rf frequency is 13.56 MHz, radio-frequency power 1500W.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (3)
In, axial magnetic field strength 1400Gs.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (3)
In step (4), the flow of Ar is 50 sccm.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (4)
In, the flow of methane is 145sccm.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (1)
In, substrate is monocrystalline silicon piece and quartz glass plate.
In a preferred embodiment of the present invention, the method for quickly preparing vertical graphene further comprises the step (1)
In, underlayer temperature is room temperature.
The invention solves the defect existing in the background technology, and preparation step of the present invention is simple, without heating, to substrate
The scope of application is wide, in the case where stablizing the effect of high density Helicon wave plasma, is passed through the active gases CH of reaction chamber4It can be abundant
Be decomposed into the C that content is high and is evenly distributedx、HyAnd CxHyLiving radical, under the action of axial magnetic field, activity is freely
Base moves to substrate surface along magnetic line of force direction, and after reaching on substrate complicated physical-chemical reaction occurs for living radical,
Including chemisorption, physical sputtering, chemical sputtering, chemistry auxiliary sputtering, to deposit the vertical stone of different shape on substrate
Black alkene, preparation speed is fast, and preparation quality is high, and is convenient for practical application.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the Ar and CH of the preferred embodiment of the present invention one4Helicon wave plasma electric discharge mass spectrum power spectrum diagnostic graph；
Fig. 2 is the Ar and CH of the preferred embodiment of the present invention one4Helicon wave plasma puts emission spectrum for diagnosing figure；
Fig. 3 is scanning electron microscope (SEM) exterior view and sectional view of the vertical graphene of the preferred embodiment of the present invention one；
Fig. 4 is Raman (Raman) spectral characterization figure of the vertical graphene of the preferred embodiment of the present invention one；
Fig. 5 is the Ar and CH of the preferred embodiment of the present invention two4Helicon wave plasma electric discharge mass spectrum power spectrum diagnostic graph；
Fig. 6 is the Ar and CH of the preferred embodiment of the present invention two4Helicon wave plasma puts emission spectrum for diagnosing figure；
Fig. 7 is scanning electron microscope (SEM) exterior view and sectional view of the vertical graphene of the preferred embodiment of the present invention two；
Fig. 8 is Raman (Raman) spectral characterization figure of the vertical graphene of the preferred embodiment of the present invention two；
Fig. 9 is the Ar and CH of the preferred embodiment of the present invention three4Helicon wave plasma electric discharge mass spectrum power spectrum diagnostic graph；
Figure 10 is the Ar and CH of the preferred embodiment of the present invention three4Helicon wave plasma puts emission spectrum for diagnosing figure；
Figure 11 is scanning electron microscope (SEM) exterior view and the section of the vertical graphene of the preferred embodiment of the present invention three
Figure；
Figure 12 is Raman (Raman) spectral characterization figure of the vertical graphene of the preferred embodiment of the present invention three.
Specific embodiment
Presently in connection with drawings and examples, the present invention is described in further detail, these attached drawings are simplified signal
Figure, the basic structure of the invention will be illustrated schematically only, therefore it only shows the composition relevant to the invention.
Embodiment one
A kind of quick method for preparing vertical graphene, comprising the following steps:
(1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit, substrate be monocrystalline silicon piece and
Quartz glass plate, underlayer temperature are room temperature；Helicon wave plasma chemical vapor deposition unit uses state of the art,
This is repeated no more；
(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum, base vacuum is 2 × 10- 6Torr；
(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 10sccm, opens radio-frequency power supply
And DC power supply, the rf frequency for adjusting radio-frequency power supply is 2 MHz, radio-frequency power 300W, and adjusting DC power supply makes axial magnetic
Field intensity is 100Gs, and the axial direction which says refers to the axial direction of Helicon wave plasma chemical vapor deposition unit；Specifically
, there is magnetometer survey axial magnetic field strength, it is strong to adjust axial magnetic field to control size of current by rotary DC power supply knob
Degree, preferably radio-frequency power supply producer: Changzhou rishige Electronic Technology Co., Ltd., product type: RSG-IVB type radio-frequency power
Source, DC power supply manufacturer: Yangzhou Yu Hong power supply manufactory, product type: WYK60V400A.
(4) continue to be passed through Ar, the flow of Ar is 10sccm, while in Helicon wave plasma chemical vapor deposition unit
It is passed through CH4, CH4Flow be 50sccm, on substrate deposited vertical graphene, sedimentation time 10min.
Fig. 1 is the Ar+CH of embodiment one4Mass spectrum power spectrum diagnostic graph when Helicon wave plasma discharges, diagnosis discovery etc.
In gas ions there are mass-to-charge ratio be 1 H, mass-to-charge ratio be 2 H2The CH that C ion that ion, mass-to-charge ratio are 12, mass-to-charge ratio are 12 from
Son, the CH that mass-to-charge ratio is 142Ion, the CH that mass-to-charge ratio is 153Ion, the CH that mass-to-charge ratio is 164Ion, the C that mass-to-charge ratio is 242
Ion, the C that mass-to-charge ratio is 252H ion, the C that mass-to-charge ratio is 262H2Ion, the C that mass-to-charge ratio is 272H3Ion, mass-to-charge ratio are 28
C2H4The ArH ion that Ar ion that ion, mass-to-charge ratio are 40, mass-to-charge ratio are 41.
Fig. 2 is the Ar+CH of embodiment one4Helicon wave plasma puts emission spectrum for diagnosing figure, diagnostic result discovery etc. from
There are the active group C of vertical graphene growth in daughter2With CH free radical, wherein also contain a large amount of argon ion and H bars
Ear end is emission spectrum.
Fig. 3 is the vertical graphene scanning electron microscope exterior view and sectional view that the preparation of embodiment one is completed, can from exterior view
To find that the thickness of thin slice is about 50nm, the average distance between thin slice and thin slice is about 50nm, be can be seen that from sectional view a
The deposition thickness of vertical graphene is 6.76 μm, is 40.56 according to the speed of growth that sedimentation time 10min calculates vertical graphene
μm/h。
Fig. 4 is Raman (Raman) the spectral characterization figure for the vertical graphene film that the preparation of embodiment one is completed, it can be found that
There are the characteristic peaks of multi-layer graphene: the peak D, the peak G, the peak G ', the peak D+D ' and the peak 2G.
Embodiment two
A kind of quick method for preparing vertical graphene, comprising the following steps:
(1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit, substrate be monocrystalline silicon piece and
Quartz glass plate, underlayer temperature are room temperature；
(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum, base vacuum is 2 × 10- 6Torr；
(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 50sccm, opens radio-frequency power supply
And DC power supply, the rf frequency for adjusting radio-frequency power supply is 13.56 MHz, radio-frequency power 1500W, and adjusting DC power supply makes axis
It is 1400Gs to magnetic field strength；Specifically, there is magnetometer survey axial magnetic field strength, electricity is controlled by rotary DC power supply knob
Size is flowed to adjust axial magnetic field strength, preferably radio-frequency power supply producer: Changzhou rishige Electronic Technology Co., Ltd., product type
Number: RSG-IVB type radio frequency power source, DC power supply manufacturer: Yangzhou Yu Hong power supply manufactory, product type:
WYK60V400A。
(4) continue to be passed through Ar, the flow of Ar is 50sccm, while in Helicon wave plasma chemical vapor deposition unit
It is passed through CH4, CH4Flow be 145sccm, on substrate deposited vertical graphene, sedimentation time 10min.
Fig. 5 is the Ar+CH of embodiment two4Mass spectrum power spectrum diagnostic graph when Helicon wave plasma discharges, diagnosis discovery etc.
In gas ions there are mass-to-charge ratio be 1 H, mass-to-charge ratio be 2 H2The CH that C ion that ion, mass-to-charge ratio are 12, mass-to-charge ratio are 12 from
Son, the CH that mass-to-charge ratio is 142Ion, the CH that mass-to-charge ratio is 153Ion, the CH that mass-to-charge ratio is 164Ion, the C that mass-to-charge ratio is 242
Ion, the C that mass-to-charge ratio is 252H ion, the C that mass-to-charge ratio is 262H2Ion, the C that mass-to-charge ratio is 272H3Ion, mass-to-charge ratio are 28
C2H4The ArH ion that Ar ion that ion, mass-to-charge ratio are 40, mass-to-charge ratio are 41.
Fig. 6 is the Ar+CH of embodiment two4Helicon wave plasma puts emission spectrum for diagnosing figure, diagnostic result discovery etc. from
There are the active group C of vertical graphene growth in daughter2With CH free radical, wherein also contain a large amount of argon ion and H bars
Ear end is emission spectrum.
Fig. 7 is the vertical graphene scanning electron microscope exterior view and sectional view that the preparation of embodiment two is completed, can from exterior view
To find that the thickness of thin slice is about 50nm, the average distance between thin slice and thin slice is about 200nm, be can be seen that from sectional view b
The deposition thickness of vertical graphene is 2.5 μm, according to the speed of growth that sedimentation time 10min calculates vertical graphene be 15 μm/
h。
Fig. 8 is Raman (Raman) spectral characterization figure of the vertical graphene film of embodiment two, it can be found that there are multilayer stones
The characteristic peak of black alkene: the peak D, the peak G, the peak G ', the peak D+D ' and the peak 2G.
Embodiment three
A kind of quick method for preparing vertical graphene, comprising the following steps:
(1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit, substrate be monocrystalline silicon piece and
Quartz glass plate, underlayer temperature are room temperature；
(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum, base vacuum is 2 × 10- 6Torr；
(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 80sccm, opens radio-frequency power supply
And DC power supply, the rf frequency for adjusting radio-frequency power supply is 60 MHz, radio-frequency power 5000W, and adjusting DC power supply makes axial direction
Magnetic field strength is 10000Gs；Specifically, there is magnetometer survey axial magnetic field strength, electricity is controlled by rotary DC power supply knob
Size is flowed to adjust axial magnetic field strength, preferably radio-frequency power supply producer: Changzhou rishige Electronic Technology Co., Ltd., product type
Number: RSG-IVB type radio frequency power source, DC power supply manufacturer: Yangzhou Yu Hong power supply manufactory, product type:
WYK60V400A。
(4) continue to be passed through Ar, the flow of Ar is 80sccm, while in Helicon wave plasma chemical vapor deposition unit
It is passed through CH4, CH4Flow be 200sccm, on substrate deposited vertical graphene, sedimentation time 10min.
Fig. 9 is the Ar+CH of embodiment three4Mass spectrum power spectrum diagnostic graph when Helicon wave plasma discharges, diagnosis discovery etc.
In gas ions there are mass-to-charge ratio be 1 H, mass-to-charge ratio be 2 H2The CH that C ion that ion, mass-to-charge ratio are 12, mass-to-charge ratio are 12 from
Son, the CH that mass-to-charge ratio is 142Ion, the CH that mass-to-charge ratio is 153Ion, the CH that mass-to-charge ratio is 164Ion, the C that mass-to-charge ratio is 242
Ion, the C that mass-to-charge ratio is 252H ion, the C that mass-to-charge ratio is 262H2Ion, the C that mass-to-charge ratio is 272H3Ion, mass-to-charge ratio are 28
C2H4The ArH ion that Ar ion that ion, mass-to-charge ratio are 40, mass-to-charge ratio are 41.
Figure 10 is the Ar+CH of embodiment three4Helicon wave plasma puts emission spectrum for diagnosing figure, diagnostic result discovery etc. from
There are the active group C of vertical graphene growth in daughter2With CH free radical, wherein also contain a large amount of argon ion and H bars
Ear end is emission spectrum.
Figure 11 is the vertical graphene scanning electron microscope exterior view and sectional view that the preparation of embodiment three is completed, can from exterior view
To find that the thickness of thin slice is about 50nm, the average distance between thin slice and thin slice is about 50nm, be can be seen that from sectional view c
The deposition thickness of vertical graphene is 6.08 μm, is 36.48 according to the speed of growth that sedimentation time 10min calculates vertical graphene
μm/h。
Figure 12 is Raman (Raman) the spectral characterization figure for the vertical graphene film that the preparation of embodiment three is completed, Ke Yifa
The existing characteristic peak in multi-layer graphene: the peak D, the peak G, the peak G ', the peak D+D ' and the peak 2G.
It is thin to can be seen that the vertical graphene of the invention that effectively can quickly prepare high quality according to above-mentioned experimental result
Film.
Based on the above description of the preferred embodiments of the present invention, through the above description, related personnel completely can be with
Without departing from the scope of the technological thought of the present invention', various changes and amendments are carried out.The technical scope of this invention
It is not limited to the contents of the specification, it is necessary to determine the technical scope according to the scope of the claims.
Claims (8)
1. the method that one kind quickly prepares vertical graphene, which comprises the following steps:
(1) substrate is placed on the chip bench in Helicon wave plasma chemical vapor deposition unit；
(2) vacuum in Helicon wave plasma chemical vapor deposition unit is evacuated to base vacuum；
(3) Ar is passed through in Helicon wave plasma chemical vapor deposition unit, the flow of Ar is 10-80sccm, opens radio frequency
Power supply and DC power supply, the rf frequency for adjusting radio-frequency power supply is 2MHz-60 MHz, radio-frequency power 300-5000W, is adjusted straight
Galvanic electricity source makes axial magnetic field strength 100-10000 Gs；
(4) continue to be passed through Ar, the flow of Ar is 10-80sccm, while in Helicon wave plasma chemical vapor deposition unit
It is passed through CH4, CH4Flow be 50-200sccm, on substrate deposited vertical graphene.
2. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (2), this
Bottom vacuum is 2 × 10-6Torr。
3. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (3), penetrate
Frequent rate is 13.56 MHz, radio-frequency power 1500W.
4. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (3), axis
It is 1400Gs to magnetic field strength.
5. the quick method for preparing vertical graphene according to claim 1, which is characterized in that the step (3) and step
Suddenly in (4), the flow of Ar is 50 sccm.
6. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (4), first
The flow of alkane is 145sccm.
7. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (1), lining
Bottom is monocrystalline silicon piece and quartz glass plate.
8. the quick method for preparing vertical graphene according to claim 1, which is characterized in that in the step (1), lining
Bottom temperature is room temperature.
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| CN112830478A (en) * | 2021-01-15 | 2021-05-25 | 北京石墨烯研究院 | Vertical graphene-based thermal interface material and preparation method and device thereof |
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