CN110093617A - A kind of titanium silk cleaning method and the titanium silk cleaned using this method - Google Patents
A kind of titanium silk cleaning method and the titanium silk cleaned using this method Download PDFInfo
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- CN110093617A CN110093617A CN201910438697.3A CN201910438697A CN110093617A CN 110093617 A CN110093617 A CN 110093617A CN 201910438697 A CN201910438697 A CN 201910438697A CN 110093617 A CN110093617 A CN 110093617A
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- titanium silk
- titanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
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- Organic Chemistry (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning In General (AREA)
Abstract
The present invention relates to cleaning metal surface field, a kind of particularly disclose titanium silk cleaning method and cleaned using this method titanium silk.Titanium silk cleaning method, it is characterised in that: pulse laser is provided, and by pulsed laser action in titanium silk, so that titanium silk be cleaned up, wherein the frequency of pulse laser is 11-16kHz, and the power of pulse laser is 80-150W.The present invention can effectively remove titanium silk surface and oil contaminant, and residual attaches object thickness at tens nanometers hereinafter, titanium silk matrix is avoided to be destroyed because of a large amount of heat inputs simultaneously, meets requirement.
Description
(1) technical field
The present invention relates to cleaning metal surface field, in particular to a kind of titanium silk cleaning method and cleaned using this method
Titanium silk.
(2) background technique
Titanium is small as a kind of density, specific strength is high, the stronger metal of corrosion resisting property, has extensive industrial application.Cold change
Shape Titanium, such as cold-drawn titanium silk, in military project, medical, multiple industry requirement amounts such as sport are larger.Cold-drawn titanium silk becomes by mold
When shape, surface can attach the pollutants such as the lubricating oil in mold and hot candied equipment, the industry high for required precision, titanium silk table face
The material demand removal attached, the dirt removal in cold-drawn titanium silk table face relies primarily on contact method, i.e. mechanical grinding at present
Or chemical cleaning mode removes.The shortcomings that such method, is to be easy to introduce secondary pollution in titanium silk table face, and inefficient；Separately
Outside, mechanical grinding is easy to generate product surface damage, and chemical cleaning is easy to generate pollution to environment.
In view of this, the present invention is specifically proposed.
(3) summary of the invention
In order to compensate for the shortcomings of the prior art, the present invention provides the high titanium silk cleaning sides of a kind of no matrix damage, cleaning efficiency
Method and the titanium silk cleaned using this method.
The present invention is achieved through the following technical solutions:
A kind of titanium silk cleaning method, it is characterised in that: pulse laser is provided, and by pulsed laser action in titanium silk, thus by titanium
Silk cleans up, wherein the frequency of pulse laser is 11-16kHz, and the power of pulse laser is 80-150W.
The present invention provides a kind of titanium silk cleaning method, this method cleans titanium silk using laser cleaning technique, can
Titanium silk surface and oil contaminant is effectively removed, meanwhile, titanium silk matrix is not destroyed, and cleaning efficiency is higher.
More excellent technical solution of the invention are as follows:
The frequency of the pulse laser is 12-15kHz, and the power of pulse laser is 85-100W.
The scanning times of the pulse laser are 1-3 times, preferably 1 time；Scanning speed is 11-19mm/s, preferably 14-
18mm/s。
The laser head of the laser cleaning titanium silk is 150-170mm, preferably 154-162mm at a distance from titanium silk upper surface.
The pulsed laser action further includes the steps that being passed through inert gas during titanium silk.
The pulsed laser action further includes being siphoned away the pollutant washed using dust exhaust apparatus during titanium silk
The step of.
The present invention also provides a kind of titanium silks cleaned using above-mentioned titanium silk cleaning method, and surface cleanness is high,
It is without secondary pollution, and without matrix damage.
The present invention cleans titanium silk using laser, laser cleaning have it is environmentally protective, without grinding, non-contact, low-heat
Effect and the high advantage of cleaning efficiency.Pulse laser frequency and function when the present invention is by using specific laser cleaning, energy
The weight of three kinds of mechanism of photodegradation phase transformation of enough effectively adjustment pulse laser shock energies, thermal expansion and molecule in the process of cleaning,
Shock energy is set to become the main drive that the greasy dirt that titanium silk table face attaches is detached from its surface.
The present invention can effectively remove titanium silk surface and oil contaminant, and residual attaches object thickness at tens nanometers hereinafter, avoiding titanium simultaneously
Silk matrix is destroyed because of a large amount of heat inputs, meets requirement.
(4) Detailed description of the invention
The present invention will be further described below with reference to the drawings.
Fig. 1 is Cleaning principle schematic diagram of the invention；
Fig. 2 is that not cleaned titanium silk table surface element scans full spectrogram；
Fig. 3 is variation diagram of the not cleaned titanium silk table face main material tenor with sputter depth；
Fig. 4 is that the titanium silk table surface element cleaned using the method for the embodiment of the present invention 14 scans full spectrogram；
Fig. 5 is the variation using the titanium silk table face main material tenor of the method for the embodiment of the present invention 14 cleaning with sputter depth
Figure.
In figure, 1 laser, 2 optical fiber, 3 laser cleaning modules, 4 inert gases, 5 dust exhaust apparatuses, 6 cold-drawn titanium silks.
(5) specific embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will manage
Solution, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the invention.Specific item is not specified in embodiment
Part person carries out according to conventional conditions or manufacturer's recommended conditions.
It should be understood that
In the present invention, if without particularly illustrating, all embodiments mentioned in this article and method is preferably implemented can be with
Intercombination forms new technical solution.
In the present invention, if without particularly illustrating, all technical characteristics and preferred feature mentioned in this article can be with
Intercombination forms new technical solution.
In the present invention, if percentage (%) or part refer to the weight hundred relative to composition without particularly illustrating
Score or parts by weight.
In the present invention, if related each component or its preferred ingredient can be combined with each other shape without particularly illustrating
The technical solution of Cheng Xin.
In the present invention, unless otherwise indicated, numberical range " a-b " indicates the breviary of any real combinings between a to b
It indicates, wherein a and b is real number.Such as numberical range " 150-170 " expression all lists " 150-170 " herein
Between whole real numbers, " 150-170 " be these combinations of values breviary indicate.
" range " disclosed in this invention can be respectively one or more lower limits and one in the form of lower and upper limit
A or multiple upper limits.
In the present invention, unless otherwise indicated, each reaction or operating procedure can be carried out sequentially, can not also be in sequence
It carries out.Preferably, reaction method herein is that sequence carries out.
Unless otherwise indicated, profession used herein and meaning phase known to scientific term and one skilled in the art
Together.In addition, any method similar to or equal to what is recorded or material can also be applied in the present invention.
In a first aspect, providing a kind of titanium silk cleaning method at least one embodiment, comprising the following steps:
Pulse laser is provided, the pulsed laser action is in titanium silk, so that titanium silk be cleaned up, wherein the frequency of pulse laser
Rate is 11-16kHz, and the power of pulse laser is 80-150W.
In the present invention, the frequency of pulse laser it is typical but non-limiting for 11kHz, 12kHz, 13kHz, 14kHz,
15kHz or 16kHz.The surface of pulse laser impact titanium silk within the scope of said frequencies generates ultrasonic wave, ultrasound in titanium silk table face
Wave returns after lower layer's hard surface in impact, interferes with incident acoustic wave, to generate high-energy resonance wave, makes titanium silk table face
Pollutant occurs small explosion, crushes, is detached from titanium silk table face.Said frequencies range is scientific and reasonable, can be effectively clear by pollutant
It removes.
In the present invention, the power of pulse laser it is typical but non-limiting for 80W, 85W, 90W, 95W, 100W, 115W,
120W, 125W, 130W, 135W, 140W, 145W or 150W.Above-mentioned power bracket is scientific and reasonable, can be improved to the clear of pollutant
Wash effect；If power is too small, clean that thickness is too small, and cleaning effect is poor；Power it is excessive then can waste of resource, clean thickness
It is excessive, titanium silk can be damaged.
The present invention cleans titanium silk using laser, laser cleaning have it is environmentally protective, without grinding, non-contact, low-heat
Effect and the high advantage of cleaning efficiency.Pulse laser frequency and power when the present invention is by using specific laser cleaning, energy
The weight of three kinds of mechanism of photodegradation phase transformation of enough effectively adjustment pulse laser shock energies, thermal expansion and molecule in the process of cleaning,
So that shock energy is become the main drive that the greasy dirt that titanium silk table face attaches is detached from its surface, titanium silk surface and oil contaminant can be effectively removed,
Residual attaches object thickness at tens nanometers hereinafter, titanium silk matrix is avoided to be destroyed because of a large amount of heat inputs simultaneously, meets use and wants
It asks.
Preferably, above-mentioned titanium silk is cold-drawn titanium silk.Cold-drawn titanium silk refers to carries out the titanium silk that drawing processes at normal temperature.
Preferably, the laser that laser generates is transmitted at laser cleaning module by transmitting device, the transmitting device
Preferably optical fiber.
It is preferably carried out in mode in one kind, the frequency of pulse laser is 12-15kHz.
It is preferably carried out in mode in one kind, the power of pulse laser is 80-150W, preferably 85-100W.
When the frequency of pulse laser and power are in above-mentioned preferred scope, more to the cleaning effect of the greasy dirt in titanium silk table face
It is good.
It is preferably carried out in mode in one kind, the scanning times of pulse laser are 1-3 times, preferably 1 time.With scanning time
Several increases, cleaning rate gradually increase, but scanning times have saturability to cleaning rate, no longer have after reaching certain number clear
Wash effect.When scanning times are 1-3 times, cleaning rate is higher, continues growing scanning times cleaning rate and does not obviously increase.
It is preferably carried out in mode in one kind, the scanning speed of pulse laser is 11-19mm/s, preferably 14-18mm/s.
Typical but non-limiting above-mentioned scanning speed is 11mm/s, 12mm/s, 13mm/s, 14mm/s, 15mm/s, 16mm/s, 17mm/
S, 18mm/s or 19mm/s.When within the scope of above-mentioned scanning speed, the pollutant in titanium silk table face can be effectively cleaned；Scanning speed
It is too fast, then the pollutant on surface can not be made fully erased clean；Scanning speed is excessively slow, then energy time of concentration too long, is easy to produce
Raw burn erosion, causes to damage to titanium silk.
It is preferably carried out in mode in one kind, the laser head in the laser cleaning module is at a distance from titanium silk upper surface
150-170mm, preferably 154-162mm.It is above-mentioned apart from it is typical but non-limiting for 150mm, 152mm, 154mm, 156mm,
158mm, 160mm, 162mm, 164mm, 168mm or 170mm.It is above-mentioned apart from scientific and reasonable, can guarantee to have it is good clear
Under the premise of washing effect, avoid that titanium silk matrix is caused to damage.
It is preferably carried out in mode in one kind, further includes being passed through indifferent gas in pulsed laser action during titanium silk
The step of body.It since the chemical property of titanium is more active, is oxidized easily, thus can be avoided titanium under the protection of inert gas
Silk surface oxidation guarantees that product surface property does not change.
It is preferably carried out in mode in one kind, the method also includes being siphoned away the pollutant washed using dust exhaust apparatus
The step of.
The schematic diagram of the titanium silk cleaning method provided as shown in Figure 1 for one embodiment of the present invention: it is issued by laser 1
Laser, through optical fiber 2 transmission output after, pulse laser is formed by laser cleaning module 3 and acts on cold-drawn titanium silk 6, was cleaned
Greasy dirt is detached from the product formed behind titanium silk table face and is siphoned away by dust exhaust apparatus 5 in journey, simultaneously as titanium is easy to oxidize, cleaning process
Holding is passed through inert gas 4 and is protected, and prevents the oxidation of titanium silk from introducing secondary pollution.
Second aspect provides a kind of titanium cleaned using above-mentioned titanium silk cleaning method at least one embodiment
Silk.The titanium silk surface cleanness cleaned using above-mentioned titanium silk cleaning method is high, without secondary pollution, and without matrix damage.
Below with reference to embodiment and comparative example, the present invention will be further described in detail.
Embodiment 1:
A kind of titanium silk cleaning method, comprising the following steps:
Pulse laser is provided, the pulsed laser action is in titanium silk, so that titanium silk is cleaned up, it then will using dust exhaust apparatus
The pollutant washed siphons away；In pulsed laser action during titanium silk, further include the steps that being passed through inert gas；
The frequency of pulse laser be 16kHz, power 150W, scanning times 1 time, scanning speed 10mm/s, laser cleaning mould
Laser head on block is 140mm at a distance from titanium silk upper surface.
Embodiment 2:
A kind of titanium silk cleaning method, unlike the first embodiment, the frequency of pulse laser is 11kHz in embodiment 2, and power is
80W。
Embodiment 3-4:
A kind of titanium silk cleaning method, unlike the first embodiment, in embodiment 3-4 the frequency of pulse laser be respectively 12kHz and
15kHz, remaining each step and its parameter are same as Example 1.
The frequency of pulse laser is in currently preferred range in embodiment 3-4.
Embodiment 5-6:
A kind of titanium silk cleaning method, as different from Example 4, in embodiment 5-6 the power of pulse laser be respectively 85W and
100W, remaining each step and its parameter are same as Example 4.
The power of pulse laser is in currently preferred range in embodiment 5-6.
Embodiment 7-10:
A kind of titanium silk cleaning method, as different from Example 6, the scanning speed of pulse laser is respectively in embodiment 7-10
11mm/s, 19mm/s, 14mm/s and 18mm/s, remaining each step and its parameter are same as Example 6.
The scanning speed of pulse laser is in currently preferred range in embodiment 7-10, pulse in embodiment 9-10
The scanning speed of laser is in further preferred range of the present invention.
Embodiment 11-14:
A kind of titanium silk cleaning method, as different from Example 10, laser head in embodiment 11-14 in laser cleaning module with
The distance of titanium silk upper surface is respectively 150mm, 170mm, 154mm and 162mm, remaining each step and its parameter with embodiment 10
It is identical.
Above-mentioned distance is in currently preferred range in embodiment 11-14, and above-mentioned distance is at this in embodiment 13-14
In invention further preferred range.
Comparative example 1:
A kind of titanium silk cleaning method, (REMA) waterborne cleaning agent W-801 graceful using promise clean titanium silk.
Comparative example 2:
A kind of titanium silk cleaning method, cleans titanium silk by the way of mechanical grinding.
Comparative example 3:
A kind of titanium maxter alloy silk cleaning method, unlike the first embodiment, this comparative example are cleaned to titanium maxter alloy silk,
Remaining each step and its parameter are same as Example 1.
Comparative example 4:
A kind of iron wire cleaning method, unlike the first embodiment, this comparative example is cleaned to iron wire, remaining each step and
Its parameter is same as Example 1.
Comparative example 5-6:
A kind of titanium silk cleaning method, unlike the first embodiment, in comparative example 5-6 the frequency of pulse laser be respectively 50W and
300W。
Comparative example 7-8:
A kind of titanium silk cleaning method, unlike the first embodiment, in comparative example 7-8 the frequency of pulse laser be respectively 10kHz and
30kHz。
Surface cleanness test is carried out to the wire that embodiment 1-14 and comparative example 1-8 are cleaned respectively, using extension
Water law is tested, and taking-up after wire is immersed in distilled water, wire is perpendicular to the ground, observes wire surface moisture film
Extent of the destruction, occur in wire surface 10s without droplet, then illustrate that wire cleans up substantially.Through detecting, embodiment 1-
14 occur without droplet in 10s, and comparative example 1-5 and 7 has droplet, and illustrating can be effectively by titanium using method of the invention
The pollutant in silk table face washes.
XPS(X-Ray Photoelectron is carried out to the wire after embodiment 1-14 and comparative example 1-8 cleaning respectively
Spectroscopy, X-ray photoelectron spectroscopic analysis) carry out surface-element analysis and element depth distribution, embodiment and comparison
Example test result is listed in Table 1 below.
From Fig. 2 and Fig. 3 it is found that without the titanium silk that method of the invention is cleaned, surface-element include Si, Ca, C, N, Ti,
O, Na, after Ar ion sputtering 500nm, main material tenor is still in rising trend, and main material metal quality percentage is 80%
Below.Illustrate that not cleaning titanium silk table face attaches object thickness more than several hundred nanometers.
From in Fig. 4 and Fig. 5 it is found that using the embodiment of the present invention 14 method cleaning after titanium silk, surface-element include C,
Ca, Ti, O, Cr, Na, through Ar ion sputtering, main material tenor is gradually risen, and after being sputtered onto 60nm, the rate of climb slows down,
Less, mass percent is up to 90% or more for the variation of main material tenor after 100nm.Illustrate after laser cleaning is handled, surface attaches
Object, which obtains, effectively to be removed, and thickness is at 100 nanometers or less.
It should be noted that above-mentioned " main material metal " refers to the metal for constituting wire, for embodiment 1-14 and comparison
Example 1-2,5-7, main material metal refers to titanium, and for comparative example 3, main material metal refers to titanium and molybdenum, for comparative example 4, main material metal
Refer to iron.
As it can be seen that main material tenor is above comparative example 1-5 and 7 in embodiment 1-14, remained on surface bur thickness is equal
Lower than comparative example 1-5 and 7, and metal wire base is not damaged, thus illustrates, can be to titanium silk using method provided by the invention
It is effectively cleaned, and titanium silk matrix will not be caused to damage, the resultant effect of cleaning is better than using existing chemical reagent
Or the mode of mechanical grinding, while better than the cleaning effect to titanium alloy wire or other wires, and in the cleaning way
Rational Parameters cannot achieve effective cleaning effect using the pulsed laser power or frequency that are lower than within the scope of this.6 He of comparative example
Main material tenor is higher than embodiment 1 in comparative example 8, and remained on surface bur thickness is lower than embodiment 1, illustrates that it is realized
Cleaning to titanium silk surface and oil contaminant, still, after over cleaning, titanium silk matrix is had damage, thus using in above-mentioned comparative example
Method is not suitable for cleaning titanium silk.
Further analysis shows that the synthesis cleaning effect of embodiment 3-4 is better than embodiment 1, illustrate using the present invention preferably
The frequency of earth pulse laser can be improved cleaning effect；
The synthesis cleaning effect of embodiment 5-6 is better than embodiment 4, and illustrating can using the power of preferably pulse laser of the invention
Improve cleaning effect；
The synthesis cleaning effect of embodiment 7-10 is better than embodiment 6, illustrates the scanning speed using the present invention preferably pulse laser
Degree can be improved cleaning effect；The synthesis cleaning effect of embodiment 9-10 is better than embodiment 7-8, illustrates using the present invention further
Preferably the scanning speed of pulse laser can further increase cleaning effect；
The synthesis cleaning effect of embodiment 11-14 is better than embodiment 10, illustrates using in the present invention preferably laser head and titanium silk
The distance on surface can be improved cleaning effect；The synthesis cleaning effect of embodiment 13-14 is better than embodiment 11-12, illustrates to use
Further preferably laser head can further increase cleaning effect at a distance from titanium silk upper surface to the present invention.
Although illustrate and describing the present invention with specific embodiment, it will be appreciated that without departing substantially from of the invention
Many other change and modification can be made in the case where spirit and scope.It is, therefore, intended that in the following claims
Including belonging to all such changes and modifications in the scope of the invention.
Claims (9)
1. a kind of titanium silk cleaning method, it is characterised in that: pulse laser is provided, and by pulsed laser action in titanium silk, thus will
Titanium silk cleans up, wherein the frequency of pulse laser is 11-16kHz, and the power of pulse laser is 80-150W.
2. titanium silk cleaning method according to claim 1, it is characterised in that: the frequency of the pulse laser is 12-
15kHz, the power of pulse laser are 85-100W.
3. titanium silk cleaning method according to claim 1, it is characterised in that: the scanning times of the pulse laser are 1-3
It is secondary, scanning speed 11-19mm/s.
4. titanium silk cleaning method according to claim 1, it is characterised in that: the laser head and titanium of the laser cleaning titanium silk
The distance of silk upper surface is 150-170mm.
5. titanium silk cleaning method according to claim 1, it is characterised in that: the pulsed laser action is in the process of titanium silk
In, further include the steps that being passed through inert gas.
6. titanium silk cleaning method according to claim 1, it is characterised in that: the pulsed laser action is in the process of titanium silk
In, further include the steps that siphoning away the pollutant washed using dust exhaust apparatus.
7. titanium silk cleaning method according to claim 3, it is characterised in that: the scanning times of the pulse laser are 1 time,
Scanning speed is 14-18mm/s.
8. titanium silk cleaning method according to claim 4, it is characterised in that: the laser head is at a distance from titanium silk upper surface
For 154-162mm.
9. a kind of titanium silk cleaned using the described in any item titanium silk cleaning methods of claim 1-8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910438697.3A CN110093617A (en) | 2019-05-24 | 2019-05-24 | A kind of titanium silk cleaning method and the titanium silk cleaned using this method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910438697.3A CN110093617A (en) | 2019-05-24 | 2019-05-24 | A kind of titanium silk cleaning method and the titanium silk cleaned using this method |
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