CN110071203A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN110071203A CN110071203A CN201910206898.0A CN201910206898A CN110071203A CN 110071203 A CN110071203 A CN 110071203A CN 201910206898 A CN201910206898 A CN 201910206898A CN 110071203 A CN110071203 A CN 110071203A
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- Prior art keywords
- light emitting
- lamination
- emitting device
- dielectric layer
- electrode
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- 238000003475 lamination Methods 0.000 claims abstract description 60
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims description 99
- 239000011241 protective layer Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 30
- 230000003760 hair shine Effects 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 silicon oxide compound Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of light emitting device, includes: a luminous lamination includes a first surface；One pattern dielectric layer is formed on the first surface of luminous lamination, comprising a first part and and a second part generally around first part and identical as the thickness of first part；The first part of one first reflecting electrode overlay pattern dielectric layer；And one barrier layer cover the second part of the first reflecting electrode and pattern dielectric layer.
Description
The application be Chinese invention patent application (application number: 201310659242.7, the applying date: on December 6th, 2013,
Denomination of invention: light emitting device) divisional application.
Technical field
The present invention relates to a kind of light emitting devices, are located at the luminous dress on an electrically-conductive backing plate more particularly to a kind of luminous lamination
It sets.
Background technique
The principle of luminosity of light emitting diode (LED) is released because electronics is displaced between n-type semiconductor and p-type semiconductor
Energy.Since the principle of luminosity of light emitting diode is different from the incandescent lamp of heat filament, so light emitting diode is also referred to as cold light
Source.Furthermore light emitting diode has preferable environmental resistance degree, longer service life, lighter and portability and lower
Energy consumption allows it to be considered as another selection of light source in illumination application.Light emitting diode be applied to as traffic sign, backlight module,
The different fields such as street lamp and Medical Devices, and gradually replace traditional light source.
The luminous lamination that light emitting diode has is epitaxial growth on an electrically-conductive backing plate or on an insulating substrate.With leading
The light emitting diode of electric substrate can form an electrode, commonly referred to as vertical LED at the top of the lamination that shines.With exhausted
The light emitting diode of edge substrate must then expose the semiconductor layer of two opposed polarities by etching process, and respectively in two halves
Electrode, commonly referred to as horizontal light emitting diode are formed in conductor layer.The advantages of vertical LED, is electrode shading
Area is few, good heat dissipation effect and without additional etching extension manufacture craft, but the electrically-conductive backing plate for the extension that is used to grow up at present has
It is easy light-absorbing problem, thus influences the luminous efficiency of light emitting diode.The advantages of horizontal light emitting diode, is absolutely
Edge substrate is generally also transparent substrate, and light can be projected from all directions of light emitting diode, however also have poor heat radiation, electrode shading
The disadvantages of area is more, extension etching process loses light-emitting area.
Above-mentioned light emitting diode can be connected to other elements further to form a light emitting device.Light emitting diode can
It is connected on a carrier by that side with substrate, or time carrier and light emitting diode is formed in solder or glue material
Between, to form a light emitting device.In addition, secondary carrier can also comprising a circuit, it be electric for example, by the conductive structure for a metal wire
It is connected to the electrode of light emitting diode.
Summary of the invention
To solve the above problems, the present invention discloses a kind of light emitting device, include: a luminous lamination includes a first surface；
One pattern dielectric layer is formed on the first surface of luminous lamination, comprising a first part and and a second part generally around
First part and identical as the thickness of first part；The first part of one first reflecting electrode overlay pattern dielectric layer；And
One barrier layer covers the second part of the first reflecting electrode and pattern dielectric layer.
Detailed description of the invention
Fig. 1 is the first embodiment for showing light emitting device of the present invention；
Fig. 2 is the second embodiment for showing light emitting device of the present invention；
Fig. 3 A and Fig. 3 B are the 3rd embodiments for showing light emitting device of the present invention.
Symbol description
100,200,300 light emitting device
102,202,302 luminous lamination
202a, 202a, 302a first surface
102b, 202b, 302b second surface
104,204,304 first semiconductor layer
106,206,306 luminescent layer
108,208,308 second semiconductor layer
110,210,310 pattern dielectric layer
110a, 210a, 310a first part
110b, 210b, 310b second part
112,212,312 first reflecting electrode
114,214,314 protective layer
The first protective layer of 214a, 314a
The second protective layer of 214b, 314b
116,216,316 second electrode structure
316a electronic pads
316b extends dendritic electrode
118,218,318 first barrier layer
120,220,320 second barrier layer
122,222,322 barrier layer
124,224,324 articulamentum
126,226,326 permanent substrate
Specific embodiment
Referring to Fig. 1, being the first embodiment for showing light emitting device of the present invention.Light emitting device 100 is to include: one is permanent
Substrate 126；One luminous lamination 102 be formed on permanent substrate 126 and include a first surface 102a towards permanent substrate 126 and
One second surface 102b is with respect to first surface 102a；One pattern dielectric layer 110 is formed on first surface 102a, includes one the
An a part of 110a and second part 110b is generally around first part 110a, and wherein first part 110a includes one first thick
Degree, second part 110b include that a second thickness is identical to first thickness；Reflexive 112 coverage diagram of the first reflecting electrode of one tool
The first part 110a of case dielectric layer 110, wherein the material of the first reflecting electrode 112 may include silver-colored (Ag), aluminium (Al) or its
He has the metal of high reflectivity or the lamination or alloy of aforementioned metal；And one barrier layer 122 cover the first reflecting electrode and
The second part 110a of pattern dielectric layer 110.It may include a second electrode structure on the second surface 102b of luminous lamination 102
The pattern of the 116 first part 110a with corresponding pattern dielectric layer 110.First reflecting electrode 112 is that Ohmic contact shines
The first surface 102a of lamination 102, second electrode structure 116 are the second surface 102b of the luminous lamination 102 of Ohmic contact, and in
The region that one vertical direction second electrode structure 116 contacts the lamination 102 that shines with the first reflecting electrode 112 is not overlap each other.
One section width of barrier layer 122 can be slightly wider than luminous lamination 102, the outer rim of the second part 110b of pattern dielectric layer 110
Can the substantially aligned side wall in barrier layer 122 and it is laterally projecting in shine lamination 102 side wall.One protective layer 114 can comply with hair
The second surface 102b that the shape of light lamination 102 is covered in luminous lamination 102 does not have the region of second electrode structure 116, and
The side wall for the lamination 102 that shines is covered, the lower end of protective layer 114 is connected with the second part 110b of pattern dielectric layer 110.Figure
The material of case dielectric layer 110 may include an insulation oxide, nitride, silicon oxide compound, titanium oxide, aluminium oxide, magnesium fluoride
Or silicon nitride.The material of protective layer 114 may include silicon nitride or silica.The material of pattern dielectric layer 110 may differ from protecting
The material of sheath 114.In the present embodiment, the material of pattern dielectric layer 110 can be titanium dioxide (TiO2), protective layer 114
Material can be silica (SiO2) or silicon nitride (SiNxOr Si3N4).If the second part of pattern-free dielectric layer 110
110b, barrier layer 110 are however the barrier layers 110 directly then in the lower end of protective layer 114 and partial first surface 102a
Material is usually metal, and the adhesion between protective layer 114 is bad, thus may make lower end and the barrier layer 110 of protective layer 114
Between generate gap, moisture or other external interferences can be by the further shadows of the gap between protective layer 114 and barrier layer 110 at this time
Ring barrier layer 110 and first surface 102a then, once barrier layer 110 falls off in first surface 102a, the first reflecting electrode
112, which are just possible to 102 side wall of self-luminous lamination, overflows, and increases the risk of 100 electric characteristic abnormality of light emitting device or failure.In this implementation
In example, the part of the first reflecting electrode 112 also second part 110b of overlay pattern dielectric layer 110, and make barrier layer 122 not
It is contacted with first surface 102a.
The lamination 102 that shines is growth substrate (not shown) of the prior epitaxial growth from a wafer scale, then in first surface
After sequentially forming pattern dielectric layer 110, the first reflecting electrode 112 and barrier layer 122 on 102a, pattern dielectric layer 110
First part 110a is to be completed simultaneously under identical manufacture craft with second part 110b, thus thickness having the same and material
Material.Then can by an articulamentum 124 by permanent substrate 126 then in luminous lamination 102, barrier layer 122 can be between articulamentum
124 and first between reflecting electrode 112, and articulamentum 124 can be between barrier layer 122 and permanent substrate 126.And permanent
Growth substrate then after luminous lamination 102, can be removed and expose second surface 102b, and further land productivity by substrate 126
Second surface 102b is set to become a coarse surface with such as dry ecthing mode.Then etchable luminous lamination 102 formed groove with
Multiple units insulated from each other are formed, can be obtained multiple light emitting devices 100 further along groove cut crystal.Second part 110b
Outside also can be thinning due to together by cutting during cut crystal, and second part 110b is contacted with first surface 102a
Section can generally remain second thickness above-mentioned.
The lamination 102 that shines may include one first semiconductor layer 104, one second semiconductor layer 108 and be formed in the first half and lead
Luminescent layer 102 between body layer 104 and the second semiconductor layer 108, wherein the first semiconductor layer 104 can be for p-type and with the first table
Face 102a, the second semiconductor layer 108 can be for N-shapeds and with second surface 102b.Barrier layer 122 may include one first barrier layer
118 and one second barrier layer 120 double-layer structure, and the material of barrier layer 122 may include such as titanium (Ti), tungsten (W), platinum
(Pt), titanium-tungsten (TiW) or combinations thereof.The structure of luminous lamination 102 may include single heterojunction structure (single
heterostructure；SH), double-heterostructure (double heterostructure；DH), bilateral double-heterostructure
(double-side double heterostructure；) or multiple quantum well construction (multi-quantum well DDH；
MQW).The lamination 102 that shines can be selected from aluminium (Al), indium (In), gallium (Ga), nitrogen (N) institute structure for the luminous lamination of mononitride, material
At the combination of group, growth substrate can be a transparent insulation substrate such as sapphire (sapphire) substrate or electrically-conductive backing plate example
Such as silicon (Si) or silicon carbide (SiC) substrate.The material of luminous lamination 102 is also selected from aluminium (Al), gallium (Ga), indium (In), phosphorus
(P), the combination of arsenic (As) constituted group, growth substrate then can be GaAs (GaAs).
Referring to Fig. 2, being the second embodiment for showing light emitting device of the present invention.Light emitting device 200 is to include: one is permanent
Substrate 226；One luminous lamination 202 be formed on permanent substrate 226 and include a first surface 202a towards permanent substrate 226 and
One second surface 202b is with respect to first surface 202a；One pattern dielectric layer 210 is formed on first surface 202a, includes one the
An a part of 210a and second part 210b is generally around first part 210a, and wherein first part 210a includes one first thick
Degree, second part 210b include that a second thickness is identical to first thickness, and the material of first part 210a and second part 210b
Expect identical；The first part 210a of the reflexive 212 overlay pattern dielectric layer 210 of the first reflecting electrode of one tool, wherein first
The material of reflecting electrode 212 may include silver-colored (Ag), aluminium (Al), other metals or aforementioned metal with high reflectivity lamination or
Alloy；And one barrier layer 222 cover the second part 210b of the first reflecting electrode and pattern dielectric layer 210.Shine lamination
It may include the first part that a second electrode structure 216 has corresponding pattern dielectric layer 210 on 202 second surface 202b
The pattern of 210a contacts the region for the lamination 202 that shines in a vertical direction second electrode structure 216 with the first reflecting electrode 212
It is not overlap each other.One section width of barrier layer 222 can be slightly wider than luminous lamination 202, and second of pattern dielectric layer 210
The outer rim of point 210b can the substantially aligned side wall in barrier layer 222 and the laterally projecting side wall in the lamination 202 that shines.One protective layer
The second surface 202b that 214 shapes that can comply with luminous lamination 202 are covered in luminous lamination 202 does not have second electrode structure
216 region, and the side wall for the lamination 202 that shines is covered, the lower end of protective layer 214 is second with pattern dielectric layer 210
210b is divided to connect.The material of pattern dielectric layer 210 may include an insulation oxide, nitride, silica, titanium oxide, oxidation
Aluminium, magnesium fluoride or silicon nitride.Protective layer 214 can have one first protective layer 214a then in the second of pattern dielectric layer 210
The side wall and one second protective layer 214b of the luminous lamination 202 of part 210b and at least covering cover the first protective layer 214a and cover
Lid second surface 202b.First protective layer 214a includes a silicon nitride (Si3N4Or SiNx), and the second protective layer 214b includes oxygen
SiClx (SiO2).In the present embodiment, the first reflecting electrode 212 and the second part 210b of pattern dielectric layer 210 are between one
Every separating.Barrier layer 222 may include one first barrier layer 218 and one second barrier layer 220.One articulamentum 224 can be formed in resistance
Between barrier layer 222 and permanent substrate 226.
Fig. 3 A and Fig. 3 B is please referred to, is the 3rd embodiment for showing light emitting device of the present invention.Light emitting device 300 is packet
Contain: a permanent substrate 326；One luminous lamination 302 is formed on permanent substrate 326 and includes a first surface 302a towards permanently
Substrate 326 and a second surface 302b are with respect to first surface 302a；One pattern dielectric layer 310 is formed in first surface 302a
On, comprising an a first part 310a and second part 310b generally around first part 310a, wherein first part 310a has
There is a first thickness, there is second part 310b a second thickness to be identical to first thickness, and first part 310a and second
Divide the material of 310b identical；The first part of the reflexive 312 overlay pattern dielectric layer 310 of the first reflecting electrode of one tool
310a, wherein the material of the first reflecting electrode 312 may include silver-colored (Ag), aluminium (Al) or other metals with high reflectivity；With
And one barrier layer 322 cover the second part 310a of the first reflecting electrode and pattern dielectric layer 310.Shine the of lamination 302
It may include the first part 310a and that a second electrode structure 316 has corresponding pattern dielectric layer 310 on two surface 302b
The pattern of two part 310b.One section width of barrier layer 322 can be slightly wider than luminous lamination 302, and the of pattern dielectric layer 310
The outer rim of two part 310b can the substantially aligned side wall in barrier layer 322 and it is laterally projecting in shine lamination 302 side wall.One protects
The second surface 302b that the shape that sheath 314 can comply with luminous lamination 302 is covered in luminous lamination 302 does not have second electrode knot
The region of structure 316, and the side wall for the lamination 302 that shines is covered, the lower end of protective layer 314 is second with pattern dielectric layer 310
Part 310b connects.The material of pattern dielectric layer 310 may include an insulation oxide, nitride, silicon oxide compound, titanyl
Close object or silicon nitride.Protective layer 314 can have one first protective layer 314a then in the second part of pattern dielectric layer 310
310b and the side wall and one second protective layer 314b covering the first protective layer 310a and second at least covering the lamination 302 that shines
Surface 302b.First protective layer 314a includes a silicon nitride (Si3N4Or SiNx), the second protective layer 314b includes that silicon oxidation is closed
Object is, for example, silica (SiO2).In the present embodiment, second of the first reflecting electrode 312 and pattern dielectric layer 310
Have between point 310b and is separated with an interval.Barrier layer 322 may include one first barrier layer 318 and one second barrier layer 320.One connection
Layer 324 can be formed between barrier layer 322 and permanent substrate 326.
As shown in Figure 3B, second electrode structure 316 may include an at least electronic pads 316a and be connected to electronic pads 316a
One extends dendritic electrode 316b, and the second part 310b of pattern dielectric layer 310 from upper view sight is to be overlapped in electronic pads 316a
And extend dendritic electrode 316b.The second part 310b of pattern dielectric layer 310 may include the outer boundary around luminous lamination,
And second part 310b is overlapped in and extends the width of the section of dendritic electrode 316b and be greater than and extend dendritic electrode 316b, and second
Part 310b be overlapped in electronic pads 316a section be counter electrode pad 316a figure.
Although disclosing the present invention in conjunction with above description, the range that it is not intended to limiting the invention, implementation sequence,
Or the material and process for making used.For various modifications and change made by the present invention, spirit of the invention is neither taken off
With range.
Claims (10)
1. a kind of light emitting device, characterized by comprising:
Shine lamination, comprising first surface, the opposite first surface second surface and connect the first surface and second table
The side in face；
Electrode structure, on the second surface of the lamination that shines, the electrode structure is comprising electronic pads and extends dendritic electrode,
Wherein, it is seen from the top view of the light emitting device, which includes that a part is located at the outside of the electrode structure and surrounds
The electrode structure；
Pattern dielectric layer is formed on the first surface of the lamination that shines, and includes a pattern, with the corresponding electrode structure
One pattern；
First reflecting electrode is formed on the first surface of the lamination that shines comprising silver-colored (Ag) or aluminium (Al)；
Barrier layer covers first reflecting electrode and the pattern dielectric layer, is wider than the lamination that shines comprising a section width；With
And
Protective layer, coat this shine lamination the side and be formed in this shine lamination contact except the electrode structure it is all should
On second surface.
2. light emitting device as described in claim 1, wherein the protective layer includes the first protective layer, being somebody's turn to do for the lamination that shines is coated
Side, but the second surface of the uncoated lamination that shines.
3. light emitting device as claimed in claim 2, wherein the protective layer also includes the second protective layer, first protective layer is covered
And it is formed in this and shines on all second surfaces that lamination contacts except the electrode structure.
4. light emitting device as claimed in claim 2, wherein the pattern dielectric layer includes that first part and second part are surround
The first part, wherein the first part have a first thickness, the second part have a second thickness, be identical to this first
Thickness, the second part of the pattern dielectric layer protrude from the side for shining lamination and connect with first protective layer, and
The second part of the pattern dielectric layer is between the barrier layer and first protective layer.
5. light emitting device as claimed in claim 4, wherein the first part of the pattern dielectric layer is by the second surface
It is upper depending on see be to be overlapped in the dendritic electrode of the extension.
6. light emitting device as claimed in claim 5, wherein the width of the first part Chong Die with the dendritic electrode of the extension is big
In the width of the dendritic electrode of the extension.
7. light emitting device as described in claim 1, wherein the pattern dielectric layer includes insulation oxide or nitride.
8. light emitting device as claimed in claim 3, wherein first reflecting electrode cover the pattern dielectric layer this first
Part, wherein first reflecting electrode and the second part of the pattern dielectric layer are separated with an interval and expose first table
Face, first reflecting electrode do not cover the second part, and the part barrier layer is made to be contacted with the first surface of the lamination that shines.
9. light emitting device as claimed in claim 3, wherein first protective layer includes silicon nitride, which includes silicon
Oxygen compound.
10. light emitting device as described in claim 1 includes also permanent substrate and articulamentum, wherein the articulamentum is formed in this
Between barrier layer and the permanent substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910206898.0A CN110071203B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910206898.0A CN110071203B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
| CN201310659242.7A CN104701433B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310659242.7A Division CN104701433B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110071203A true CN110071203A (en) | 2019-07-30 |
| CN110071203B CN110071203B (en) | 2021-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910206898.0A Active CN110071203B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
| CN201310659242.7A Active CN104701433B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310659242.7A Active CN104701433B (en) | 2013-12-06 | 2013-12-06 | Light emitting device |
Country Status (1)
| Country | Link |
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| CN104701433A (en) | 2015-06-10 |
| CN110071203B (en) | 2021-10-26 |
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