CN110068922B - Interferometric modulation display panel, manufacturing method thereof, display device and display method - Google Patents
Interferometric modulation display panel, manufacturing method thereof, display device and display method Download PDFInfo
- Publication number
- CN110068922B CN110068922B CN201910355671.2A CN201910355671A CN110068922B CN 110068922 B CN110068922 B CN 110068922B CN 201910355671 A CN201910355671 A CN 201910355671A CN 110068922 B CN110068922 B CN 110068922B
- Authority
- CN
- China
- Prior art keywords
- substrate
- electrode
- liquid
- chambers
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
The invention provides an interferometric modulation display panel and a manufacturing method thereof, a display device and a display method, wherein the display panel comprises: the driving circuit comprises a lower substrate, a middle substrate and an upper substrate, wherein the middle substrate is provided with a through hole, and the middle substrate and the lower substrate are provided with driving electrodes; a plurality of first chambers disposed between the upper substrate and the middle substrate; the first cavities and the second cavities correspond to each other one by one, and the corresponding first cavities and the corresponding second cavities are communicated through holes; a first liquid disposed in the first chamber; the second liquid is arranged in the second cavity, the first liquid and the second liquid are not dissolved, the density of the second liquid is greater than that of the first liquid, and the reflectivity of the first liquid is greater than a preset threshold value; the driving electrode generates a driving electric field for driving the second liquid to move towards the first chamber after being applied with voltage. The invention adopts the microfluidic technology to realize the interferometric modulation display, does not need a silicon-based MEMS (micro-electromechanical systems) process and has simple manufacturing process.
Description
Technical Field
The invention relates to the technical field of display, in particular to an interferometric modulation display panel and a manufacturing method thereof, a display device and a display method.
Background
Interferometric modulation Display (IMOD) utilizes light reflection from an air gap between two substrate surfaces to create interference, by controlling the size of the air gap, to produce different colors.
The existing interferometric modulation display is mostly realized by a Micro Electro Mechanical System (MEMS) circuit, the MEMS circuit needs to be manufactured on a silicon chip, the process is complex, and the wide application of the interferometric modulation display is not facilitated.
Disclosure of Invention
In view of this, the invention provides an interferometric modulation display panel, a manufacturing method thereof, a display device and a display method, which are used for solving the problem that the existing MEMS circuit is adopted to realize interferometric modulation display, and the manufacturing process is complex.
To solve the above technical problem, the present invention provides an interferometric modulation display panel, comprising:
the circuit board comprises a lower substrate, a middle substrate and an upper substrate which are arranged in sequence, wherein a through hole is formed in the middle substrate, and driving electrodes are arranged on the middle substrate and the lower substrate;
a first partition wall disposed between the upper substrate and the middle substrate, the first partition wall defining a plurality of first chambers between the upper substrate and the middle substrate;
the second separation walls are arranged between the middle substrate and the lower substrate and define a plurality of second chambers positioned between the middle substrate and the lower substrate, the first chambers correspond to the second chambers one by one, and the corresponding first chambers are communicated with the corresponding second chambers through holes in the middle substrate;
a first liquid disposed within the first chamber;
the second liquid is arranged in the second cavity, the first liquid and the second liquid are not dissolved, the density of the second liquid is greater than that of the first liquid, and the reflectivity of the first liquid is greater than a preset threshold value;
and after voltage is applied to the driving electrodes, a driving electric field for driving the second liquid to move towards the first chamber through the through hole in the intermediate substrate is generated.
Optionally, the lower substrate includes:
a first substrate;
a first electrode disposed on the first substrate;
a first passivation layer disposed on the first electrode;
the first hydrophobic dielectric layer is arranged on the first passivation layer;
wherein the drive electrode comprises the first electrode.
Optionally, the intermediate substrate includes:
a second substrate;
a second electrode disposed on a first side of the second substrate;
a second passivation layer disposed on the second electrode;
the second hydrophobic dielectric layer is arranged on the second passivation layer;
a thin film transistor functional layer disposed on a second side of the second substrate, the thin film transistor functional layer including a source and a drain;
the third passivation layer is arranged on the thin film transistor functional layer;
a third electrode disposed on the third passivation layer, the third electrode being connected to the source electrode or the drain electrode;
the third hydrophobic medium layer is arranged on the third electrode;
wherein the driving electrode includes the second electrode and the third electrode.
Optionally, the intermediate substrate further includes:
and the reflecting metal layer is arranged on the second side of the second substrate.
Optionally, the first liquid is a polar liquid;
the second liquid is a non-polar liquid.
The invention provides a manufacturing method of an interferometric modulation display panel, which comprises the following steps:
forming an upper substrate, a middle substrate and a lower substrate, wherein a through hole is formed on the middle substrate, and driving electrodes are formed on the middle substrate and the lower substrate;
the middle substrate and the lower substrate are aligned, a second partition wall is formed on one of the middle substrate and the lower substrate, the second partition wall defines a plurality of second chambers located between the middle substrate and the lower substrate, and second liquid is injected into the second chambers through the through holes in the middle substrate;
the method comprises the steps of aligning the middle substrate and the lower substrate after box alignment with the upper substrate, wherein a first partition wall is formed on one of the upper substrate and the middle substrate, the first partition wall defines a plurality of first chambers located between the upper substrate and the middle substrate, the first chambers and the second chambers are in one-to-one correspondence, the corresponding first chambers and the corresponding second chambers are communicated through holes in the middle substrate, first liquid is injected into the first chambers in the box alignment process, the first liquid and the second liquid are not dissolved, the density of the second liquid is larger than that of the first liquid, and the reflectivity of the first liquid is larger than a preset threshold value.
Optionally, forming the lower substrate includes:
providing a first substrate;
forming a first electrode on the first substrate;
forming a first passivation layer on the first electrode;
forming a first hydrophobic medium layer on the first passivation layer;
wherein the drive electrode comprises the first electrode.
Optionally, forming the intermediate substrate includes:
providing a first hard substrate;
forming a second substrate on the first hard substrate, wherein the second substrate is a flexible substrate;
forming a second electrode on a first side of the second substrate;
forming a second passivation layer on the second electrode;
forming a second hydrophobic medium layer on the second passivation layer;
peeling the second substrate from the first hard substrate, and transferring the second substrate to a second hard substrate, wherein the first side of the second substrate faces the second hard substrate during transferring;
forming a thin film transistor functional layer on a second side of the second substrate, the thin film transistor functional layer including a source and a drain;
forming a third passivation layer on the thin film transistor functional layer;
forming a third electrode on the third passivation layer, the third electrode being connected to the source electrode or the drain electrode;
forming a third hydrophobic medium layer on the third electrode so as to form an intermediate substrate;
etching the intermediate substrate to form a through hole penetrating through the intermediate substrate;
peeling the intermediate substrate from the second hard substrate;
wherein the driving electrode includes the second electrode and the third electrode.
Optionally, after the second substrate is peeled off from the first rigid substrate and transferred onto a second rigid substrate, before a thin film transistor functional layer is formed on the second side of the second substrate, the method further includes:
forming a reflective metal layer on a second side of the second substrate;
and forming a buffer layer on the reflecting metal layer.
The invention provides a display device comprising the interferometric modulation display panel.
The invention provides a display method, which is applied to the display device and comprises the following steps:
during displaying, applying a voltage to the driving electrode, wherein after the voltage is applied to the driving electrode, the second liquid moves to the first chamber through the through hole on the intermediate substrate, and the rising height of the second liquid in the first chamber is determined by the magnitude of the voltage;
when not displayed, the application of voltage to the drive electrode is stopped and the second liquid moves back to the second chamber.
The technical scheme of the invention has the following beneficial effects:
in the embodiment of the invention, the micro-fluidic technology is adopted to realize the interferometric modulation display, the interferometric modulation display panel of the type has simple manufacturing process, does not need a silicon-based MEMS (micro-electromechanical systems) manufacturing process, has the advantages of low power consumption, good high-brightness display effect and the like, and is favorable for wide application of the interferometric modulation display.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic structural diagram of an interferometric modulation display panel according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a display principle of an interferometric modulation display panel according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a lower substrate according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a first electrode on a lower substrate according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an intermediate substrate according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a second electrode on an intermediate substrate according to an embodiment of the invention;
FIG. 7 is a schematic structural diagram of an upper substrate according to an embodiment of the present invention;
FIG. 8 is a schematic flow chart illustrating a method for fabricating an interferometric modulation display panel according to an embodiment of the invention;
FIG. 9 is a schematic diagram of a cell alignment process of an interferometric modulation display panel according to an embodiment of the invention;
FIGS. 10A-10G are schematic views illustrating a method of fabricating an intermediate substrate according to an embodiment of the invention;
FIG. 11 is a flowchart illustrating a display method according to an embodiment of the invention;
FIG. 12 is a diagram illustrating a state transition of an interferometric modulation display panel according to an embodiment of the present invention during a display process.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an interferometric modulation display panel according to an embodiment of the present invention, the interferometric modulation display panel including:
the circuit board comprises a lower substrate 10, an intermediate substrate 20 and an upper substrate 30 which are arranged in sequence, wherein a through hole is formed in the intermediate substrate 20, and driving electrodes are arranged on the intermediate substrate 20 and the lower substrate 10;
a first partition wall 40 disposed between the upper substrate 30 and the middle substrate 20, the first partition wall 40 defining a plurality of first chambers between the upper substrate 30 and the middle substrate 20;
the second partition walls 50 are arranged between the middle substrate 20 and the lower substrate 10, the second partition walls 50 define a plurality of second chambers located between the middle substrate 20 and the lower substrate 10, the first chambers and the second chambers correspond to each other one to one, and the corresponding first chambers and the corresponding second chambers are communicated through holes in the middle substrate 20;
a first liquid 60 disposed within the first chamber;
a second liquid 70 disposed in the second chamber, the first liquid 60 and the second liquid 70 being immiscible, the density of the second liquid 70 being greater than the density of the first liquid 60, the reflectivity of the first liquid 60 being greater than a predetermined threshold;
wherein, the driving electrode generates a driving electric field for driving the second liquid 70 to move to the first chamber through the via hole on the intermediate substrate 20 after being applied with a voltage.
In the embodiment of the present invention, the first chambers and the second chambers are in one-to-one correspondence, that is, in positions, the first chambers are located above the corresponding second chambers, the corresponding first chambers and the corresponding second chambers are communicated through the through holes on the middle substrate 20, and one first chamber and one second chamber corresponding to each other belong to one sub-pixel unit.
In the embodiment of the present invention, when a voltage is applied to the driving electrodes of the sub-pixel units, the contact angle between the second liquid 70 and the lower substrate 10 can be changed, so that the second liquid 70 is deformed and moves to the first chamber through the through hole on the middle substrate 20. Since the density of the second liquid 70 is greater than the density of the first liquid 60, it is ensured that the first liquid 60 is always above the second liquid 70 after the second liquid 70 has been displaced into the first chamber. The rise height of the second liquid 70 in the first chamber is determined by the magnitude of the voltage. Referring to fig. 2, fig. 2 shows three sub-pixel units of an interferometric modulation display panel, in an embodiment of the present invention, voltages applied by driving electrodes of the three sub-pixel units are different from each other, so that rising heights of the second liquid 70 in the first chamber are different, that is, air gaps between the first liquid 60 and the upper substrate 30 in the first chamber are different, and different air gaps can generate different colors of reflected light, so that different sub-pixel units can present different colors. That is, by controlling the driving voltage of the driving electrode of the sub-pixel unit, the size of the air gap formed by the first chamber of the sub-pixel unit can be controlled, so as to generate different colors, thereby realizing color display. This technique of controlling the change in contact angle of a liquid by a driving voltage to generate movement is also called a microfluidic technique.
In the embodiment of the invention, the micro-fluidic technology is adopted to realize the interferometric modulation display, the interferometric modulation display panel of the type has a simple manufacturing process, does not need a silicon-based MEMS (micro-electromechanical systems) manufacturing process, has the advantages of low power consumption (the display is realized based on reflected ambient light), good high-brightness display effect and the like, and is beneficial to the wide application of the interferometric modulation display.
In an embodiment of the present invention, the reflectivity of the first liquid 60 is greater than a preset threshold, and the preset threshold may be, for example, 95%. Further preferably, it may be 99% or more. In addition, the thickness of the first liquid 60 needs to be less than a preset thickness so as to facilitate control of the position of the reflecting surface.
In some embodiments of the present invention, the first liquid 60 is a polar liquid; the second liquid 70 is a non-polar liquid. For example, the first liquid 60 may be a polyimide/Ag composite solution prepared by an in situ method or a polar HMDS (hexamethyldisilazane) solution. The second liquid 70 may be an ink (optionally having a density of 1.5 to 3g/cm3), carbon tetrachloride, bromoethane, or other non-polar liquid.
In the embodiment of the present invention, after the second liquid 70 is deformed, the second liquid generally changes from a spreading state to a shrinking state towards the edge of the sub-pixel unit, and therefore, preferably, the through hole on the intermediate substrate 20 is located at the edge of the sub-pixel unit, so as to facilitate the second liquid 70 to move towards the first chamber. The number of the through holes may be one or more.
It should be noted that the intermediate substrate 20 shown in fig. 1 and 2 is only schematic, and the specific structure will be described in the following.
The following describes a specific structure of the lower substrate 10, the middle substrate 20, and the upper substrate 30.
Referring to fig. 3, in some embodiments of the present invention, the lower substrate 10 may include:
a first substrate 11; the first substrate 11 may be a glass substrate.
A first electrode 12 provided on the first substrate 11; referring to fig. 4, the first electrode 12 may be a strip-shaped electrode, and optionally, the first electrode 12 may be made of a transparent oxide conductive material such as ITO. The width of the electrode stripes of the first electrode 12 may be of various designs of 50-300 μm as required.
A first passivation layer 13 disposed on the first electrode 12; the first passivation layer 13 may be made of SiN (silicon nitride), SiO (silicon oxide), or a composite film of the two.
A first hydrophobic dielectric layer 14 disposed on the first passivation layer 13; the first hydrophobic medium layer 14 may be made of teflon or the like. The first hydrophobic medium layer 14 is in contact with the second liquid 70.
Wherein the driving electrode comprises the first electrode 12.
In some embodiments of the present invention, a second partition wall 50 may be further disposed on the lower substrate 10. Of course, the second partition wall 50 may be disposed on the intermediate substrate 20.
Referring to fig. 5, in some embodiments of the present invention, the intermediate substrate 20 may include:
the second substrate 21, optionally, the second substrate 21 is a flexible substrate, for example, a polyimide substrate, so that a through hole is easily formed. Of course, in other embodiments of the present invention, the second substrate 21 may also be a rigid substrate.
A second electrode 22 provided on a first side of the second substrate 21; referring to fig. 6, the second electrode 22 may be a strip-shaped electrode perpendicular to the first electrode 12 on the lower substrate 10, and optionally, the first electrode may be made of a transparent oxide conductive material such as ITO.
A second passivation layer 23 disposed on the second electrode 22; the second passivation layer 23 may be made of SiN (silicon nitride), SiO (silicon oxide), or a composite film of the two.
A second hydrophobic dielectric layer 24 disposed on the second passivation layer 23; the second hydrophobic medium layer 24 may be made of teflon or the like.
A thin film transistor functional layer disposed on a second side of the second substrate 21, the thin film transistor functional layer including an active layer 27, a gate insulating layer 28, a gate electrode 29, an interlayer insulating layer 210, a source electrode 211, and a drain electrode 212; the thin film transistor shown in fig. 5 is a top gate thin film transistor, but of course, in some other embodiments of the present invention, the thin film transistor may also be a bottom gate thin film transistor. In the embodiment of the present invention, the active layer 27 may be made of a semiconductor material such as low temperature polysilicon, and the gate insulating layer may be made of an SiO material.
A third passivation layer 213 disposed on the thin film transistor functional layer; the third passivation layer 213 may be made of SiN (silicon nitride), SiO (silicon oxide), or a composite film of the two.
A third electrode 214 disposed on the third passivation layer 213, the third electrode 214 being connected to the source electrode 211 or the drain electrode 212; in this embodiment, the third electrode 214 is connected to the source 211; the third electrode 214 may be made of a transparent oxide conductive material such as ITO.
A third hydrophobic dielectric layer 215 disposed on the third electrode 214; the third hydrophobic medium layer 215 may be made of teflon or the like.
Wherein the driving electrodes in the above embodiments include the second electrode and 22 the third electrode 214.
Referring to fig. 5, the intermediate substrate 20 according to the embodiment of the present invention may further include:
a reflective metal layer 25 disposed on a second side of the second substrate 21 and on a side of the thin film transistor functional layer close to the second substrate 21; the reflecting metal layer can be made of Ag (silver), and the reflecting effect is good. The reflective metal layer 25 may assist in reflecting external light, thereby improving brightness.
And a buffer layer 26 disposed between the reflective metal layer 25 and the thin film transistor functional layer. The buffer layer may be made of SiN, and the buffer layer 26 plays an insulating role.
In some embodiments of the present invention, a first partition wall 40 and a second partition wall 50 may be further disposed on the intermediate substrate 20. Of course, the first partition wall 40 may be disposed on the middle substrate 20, and the second partition wall 50 may be disposed on the lower substrate 10.
Referring to fig. 7, in some embodiments of the present invention, the upper substrate 30 may include:
a third substrate 31; the third substrate 31 may be a glass substrate or the like.
In some embodiments of the present invention, a first partition wall 40 may be further disposed on the upper substrate 30. Of course, the first partition wall 40 may be disposed on the intermediate substrate 20.
Referring to fig. 8, an embodiment of the present invention further provides a method for manufacturing an interferometric modulation display panel, including:
step 81: forming an upper substrate, a middle substrate and a lower substrate, wherein a through hole is formed on the middle substrate, and driving electrodes are formed on the middle substrate and the lower substrate;
step 82: the middle substrate and the lower substrate are aligned, a second partition wall is formed on one of the middle substrate and the lower substrate, the second partition wall defines a plurality of second chambers located between the middle substrate and the lower substrate, and second liquid is injected into the second chambers through the through holes in the middle substrate;
referring to fig. 9, a second liquid 70 is injected into the second chamber through the through hole of the intermediate substrate 20.
Step 83: the method comprises the steps of aligning the middle substrate and the lower substrate after box alignment with the upper substrate, wherein a first partition wall is formed on one of the upper substrate and the middle substrate, the first partition wall defines a plurality of first chambers located between the upper substrate and the middle substrate, the first chambers and the second chambers are in one-to-one correspondence, the corresponding first chambers and the corresponding second chambers are communicated through holes in the middle substrate, first liquid is injected into the first chambers in the box alignment process, the first liquid and the second liquid are not dissolved, the density of the second liquid is larger than that of the first liquid, and the reflectivity of the first liquid is larger than a preset threshold value.
In an embodiment of the present invention, the preset threshold may be, for example, 95%. Further preferably, it may be 99% or more. In addition, the thickness of the first liquid 60 needs to be less than a preset thickness so as to facilitate control of the position of the reflecting surface.
In some embodiments of the present invention, the first liquid 60 is a polar liquid; the second liquid 70 is a non-polar liquid. For example, the first liquid 60 may be a polyimide/Ag composite solution prepared by an in situ method or a polar HMDS (hexamethyldisilazane) solution. The second liquid 70 may be an ink (optionally having a density of 1.5 to 3g/cm3), carbon tetrachloride, bromoethane, or the like.
The preparation method of the polyimide/Ag composite solution may include: mixing the polyamic acid solution and the complex or compound of metal Ag, heating and stirring in a stepped way, condensing and polymerizing polyamic acid, and self-metallizing metal Ag to form metal ions, so that polyimide polar solution containing Ag atoms densely can be obtained, the concentration of the Ag atoms is adjusted, and the reflectivity can reach more than 99%. Referring to the following table, the reflectance of the polyimide/Ag composite solution is shown in the following table when the Ag atom concentration is different.
| Reflectivity of light | 90％ | 95％ | 99％ |
| Density (g/cm3) | 1.05 | 1.28 | 1.42 |
In some embodiments of the present invention, referring to fig. 3, the process of forming the lower substrate includes:
step 91: providing a first substrate 11;
and step 92: forming a first electrode 12 on the first substrate 11;
the first electrode may be formed using a transparent oxide conductive material such as ITO. Alternatively, the transparent oxide conductive film layer may be formed by sputtering through a sputtering apparatus, and then the transparent oxide conductive film layer may be patterned through a photolithography process to form the first electrode 12. The photoetching process comprises the following steps: coating photoresist, exposing, developing, etching and the like.
Step 93: forming a first passivation layer 13 on the first electrode 12;
step 94: forming a first hydrophobic dielectric layer 14 on the first passivation layer 13;
wherein the drive electrode comprises the first electrode 12.
In some embodiments of the present invention, referring to fig. 10A-10G, the process of forming the intermediate substrate includes:
step 101: referring to fig. 10A, a first hard substrate 201 is provided; the first rigid substrate 201 may be a glass substrate.
Step 102: referring to fig. 10A, a second substrate 21 is formed on the first rigid substrate 201, where the second substrate 21 is a flexible substrate;
step 103: referring to fig. 10A, a second electrode 22 is formed on a first side of the second substrate 21;
step 104: referring to fig. 10A, a second passivation layer 23 is formed on the second electrode 22;
step 105: referring to fig. 10A, a second hydrophobic dielectric layer 24 is formed on the second passivation layer 23;
step 106: referring to fig. 10B, the second substrate 21 is peeled off from the first rigid substrate 201 and transferred to a second rigid substrate 202, and a first side of the second substrate 21 faces the second rigid substrate 202 during the transfer;
the second rigid substrate 202 may be a glass substrate.
Step 107: referring to fig. 10C, a reflective metal layer 25 is formed on the second side of the second substrate 21;
step 108: referring to fig. 10C, a buffer layer 26 is formed on the reflective metal layer 25.
In some embodiments of the invention, said steps 107 and 108 may be omitted.
Step 109: referring to fig. 10D, a thin film transistor functional layer is formed on the second side of the second substrate 21, and the thin film transistor functional layer includes an active layer 27, a gate insulating layer 28, a gate electrode 29, an interlayer insulating layer 210, a source electrode 211, and a drain electrode 212;
step 110: referring to fig. 10E, a third passivation layer 213 is formed on the thin film transistor functional layer;
step 111: referring to fig. 10F, a third electrode 214 is formed on the third passivation layer 213, and the third electrode 214 is connected to the source electrode 211 or the drain electrode 212;
step 112: referring to fig. 10F, a third hydrophobic dielectric layer 215 is formed on the third electrode 214, so as to form an intermediate substrate 20;
step 113: referring to fig. 10G, the intermediate substrate 20 is etched to form a through hole penetrating through the intermediate substrate 20';
step 114: the intermediate substrate 20 is peeled off from the second hard substrate 202, and the intermediate substrate 20 is finally formed with reference to fig. 5.
In the embodiment of the present invention, a laser lift-off method may be adopted to lift off the intermediate substrate 20 from the second hard substrate 202.
Wherein the driving electrode includes the second electrode and the third electrode.
The embodiment of the invention also provides a display device which comprises the interferometric modulation display panel.
Referring to fig. 11, an embodiment of the present invention further provides a display method applied to the display device, including:
step 121: during displaying, applying a voltage to the driving electrode, wherein after the voltage is applied to the driving electrode, the second liquid moves to the first chamber through the through hole on the intermediate substrate, and the rising height of the second liquid in the first chamber is determined by the magnitude of the voltage;
step 122: when not displayed, the application of voltage to the drive electrode is stopped and the second liquid moves back to the second chamber.
The principle of the microfluidic technique is explained below.
In microfluidic technology, the driving pressure difference Δ p of a droplet is calculated by the formula:
wherein γ LG is the surface tension of the droplet, θb0，θbThe contact angles of the liquid drop and the surface of the hydrophobic medium layer before and after the application of the voltage are respectively shown (the wettability of the liquid drop is changed by the application of the voltage, namely the contact angle). EpsilonrIs the effective dielectric constant of the hydrophobic dielectric layer, t is the thickness of the hydrophobic dielectric layer, and d is the distance between the upper and lower electrodes for generating a voltage difference.
As can be seen from the formula, the driving pressure difference Δ p is proportional to the square of the applied voltage, inversely proportional to the thickness of the hydrophobic dielectric layer, and proportional to the effective dielectric constant of the hydrophobic dielectric layer. Taking ink droplet driving as an example, the potential difference value can be adjusted according to different chip manufacturing process parameters and testing environments, and the voltage difference value is in the range of 0-600V, preferably 50-100V.
The process of displacing the second liquid in the embodiment of the present invention will be described with reference to fig. 12 below:
1. a voltage is applied to the first electrode on the lower substrate 10, and the wettability, i.e., the contact angle, of the second liquid is changed by the applied voltage, and the second liquid shrinks to the through hole, see (a) → (B) in fig. 12.
2. A voltage is applied to the second electrode on the intermediate substrate 20, and the second liquid is continuously displaced upward to the upper surface of the intermediate substrate under the action of the voltage difference, please refer to (B) → (C) in fig. 12.
3. Applying a voltage to the third electrode of the intermediate substrate 20 and stopping applying a voltage to the second electrode of the intermediate substrate, the second liquid returns to the through hole position, please refer to (C) → (D) in fig. 12.
4. The application of the voltage to the first electrode of the lower substrate 10 is stopped, and the second liquid returns to the second chamber, please refer to (D) → (E) in fig. 12.
The size of the air gap between the first liquid and the upper substrate is controlled by controlling the second liquid to enter or leave the first chamber from the second chamber, so that different color displays are generated.
1. The relationship between the voltage applied to the second electrode on the intermediate substrate 20 and the display effect will be described below, in which the voltage applied to the second electrode on the intermediate substrate 20 is different, and the rising height of the second liquid is different:
under the control of low voltage difference (e.g. 50-65V), a small amount of the second liquid enters the first chamber, the air gap between the first liquid and the upper substrate is large, and the light is reflected to form interference, so as to generate light of red → orange (590-750nm wavelength range), please refer to the leftmost sub-pixel unit in FIG. 2;
2. under the control of the medium voltage difference (e.g. 65-80V), the medium dose of the second liquid enters the first chamber to generate light of yellow → green (495-;
3. under the control of high voltage difference (e.g. 80-100V), a larger amount of the second liquid enters the first chamber, the air gap between the first liquid and the upper substrate is smaller, and the light reflection interferes to generate light of cyan → blue (450-.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
1. An interferometric modulation display panel, comprising:
the circuit board comprises a lower substrate, a middle substrate and an upper substrate which are arranged in sequence, wherein a through hole is formed in the middle substrate, and driving electrodes are arranged on the middle substrate and the lower substrate;
a first partition wall disposed between the upper substrate and the middle substrate, the first partition wall defining a plurality of first chambers between the upper substrate and the middle substrate;
the second separation walls are arranged between the middle substrate and the lower substrate and define a plurality of second chambers positioned between the middle substrate and the lower substrate, the first chambers correspond to the second chambers one by one, and the corresponding first chambers are communicated with the corresponding second chambers through holes in the middle substrate;
a first liquid disposed within the first chamber;
the second liquid is arranged in the second cavity, the first liquid and the second liquid are not dissolved, the density of the second liquid is greater than that of the first liquid, and the reflectivity of the first liquid is greater than a preset threshold value;
and after voltage is applied to the driving electrodes, a driving electric field for driving the second liquid to move towards the first chamber through the through hole in the intermediate substrate is generated.
2. The interferometric modulating display panel of claim 1, wherein the lower substrate comprises:
a first substrate;
a first electrode disposed on the first substrate;
a first passivation layer disposed on the first electrode;
the first hydrophobic dielectric layer is arranged on the first passivation layer;
wherein the drive electrode comprises the first electrode.
3. The interferometric modulating display panel of claim 1, wherein the intermediate substrate comprises:
a second substrate;
a second electrode disposed on a first side of the second substrate;
a second passivation layer disposed on the second electrode;
the second hydrophobic dielectric layer is arranged on the second passivation layer;
a thin film transistor functional layer disposed on a second side of the second substrate, the thin film transistor functional layer including a source and a drain;
the third passivation layer is arranged on the thin film transistor functional layer;
a third electrode disposed on the third passivation layer, the third electrode being connected to the source electrode or the drain electrode;
the third hydrophobic medium layer is arranged on the third electrode;
wherein the driving electrode includes the second electrode and the third electrode.
4. The interferometric modulating display panel of claim 3, wherein the intermediate substrate further comprises:
and the reflecting metal layer is arranged on the second side of the second substrate.
5. The interferometric modulating display panel of claim 1,
the first liquid is a polar liquid;
the second liquid is a non-polar liquid.
6. A method for manufacturing an interferometric modulation display panel, comprising:
forming an upper substrate, a middle substrate and a lower substrate, wherein a through hole is formed on the middle substrate, and driving electrodes are formed on the middle substrate and the lower substrate;
the middle substrate and the lower substrate are aligned, a second partition wall is formed on one of the middle substrate and the lower substrate, the second partition wall defines a plurality of second chambers located between the middle substrate and the lower substrate, and second liquid is injected into the second chambers through the through holes in the middle substrate;
the method comprises the steps of aligning the middle substrate and the lower substrate after box alignment with the upper substrate, wherein a first partition wall is formed on one of the upper substrate and the middle substrate, the first partition wall defines a plurality of first chambers located between the upper substrate and the middle substrate, the first chambers and the second chambers are in one-to-one correspondence, the corresponding first chambers and the corresponding second chambers are communicated through holes in the middle substrate, first liquid is injected into the first chambers in the box alignment process, the first liquid and the second liquid are not dissolved, the density of the second liquid is larger than that of the first liquid, and the reflectivity of the first liquid is larger than a preset threshold value.
7. The method of claim 6, wherein forming the lower substrate comprises:
providing a first substrate;
forming a first electrode on the first substrate;
forming a first passivation layer on the first electrode;
forming a first hydrophobic medium layer on the first passivation layer;
wherein the drive electrode comprises the first electrode.
8. The method of claim 6, wherein forming the intermediate substrate comprises:
providing a first hard substrate;
forming a second substrate on the first hard substrate, wherein the second substrate is a flexible substrate;
forming a second electrode on a first side of the second substrate;
forming a second passivation layer on the second electrode;
forming a second hydrophobic medium layer on the second passivation layer;
peeling the second substrate from the first hard substrate, and transferring the second substrate to a second hard substrate, wherein the first side of the second substrate faces the second hard substrate during transferring;
forming a thin film transistor functional layer on a second side of the second substrate, the thin film transistor functional layer including a source and a drain;
forming a third passivation layer on the thin film transistor functional layer;
forming a third electrode on the third passivation layer, the third electrode being connected to the source electrode or the drain electrode;
forming a third hydrophobic medium layer on the third electrode so as to form an intermediate substrate;
etching the intermediate substrate to form a through hole penetrating through the intermediate substrate;
peeling the intermediate substrate from the second hard substrate;
wherein the driving electrode includes the second electrode and the third electrode.
9. The method of claim 8, wherein after the second substrate is peeled from the first rigid substrate and transferred to a second rigid substrate, and before forming a thin film transistor functional layer on a second side of the second substrate, further comprising:
forming a reflective metal layer on a second side of the second substrate;
and forming a buffer layer on the reflecting metal layer.
10. A display device comprising the interferometric modulating display panel of any one of claims 1 to 5.
11. A display method applied to the display device according to claim 10, comprising:
during displaying, applying a voltage to the driving electrode, wherein after the voltage is applied to the driving electrode, the second liquid moves to the first chamber through the through hole on the intermediate substrate, and the rising height of the second liquid in the first chamber is determined by the magnitude of the voltage;
when not displayed, the application of voltage to the drive electrode is stopped and the second liquid moves back to the second chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910355671.2A CN110068922B (en) | 2019-04-29 | 2019-04-29 | Interferometric modulation display panel, manufacturing method thereof, display device and display method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910355671.2A CN110068922B (en) | 2019-04-29 | 2019-04-29 | Interferometric modulation display panel, manufacturing method thereof, display device and display method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110068922A CN110068922A (en) | 2019-07-30 |
| CN110068922B true CN110068922B (en) | 2021-09-21 |
Family
ID=67369515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910355671.2A Active CN110068922B (en) | 2019-04-29 | 2019-04-29 | Interferometric modulation display panel, manufacturing method thereof, display device and display method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110068922B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005309216A (en) * | 2004-04-23 | 2005-11-04 | Casio Comput Co Ltd | Display device |
| CN1742221A (en) * | 2003-01-27 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Display device |
| WO2006021912A1 (en) * | 2004-08-26 | 2006-03-02 | Koninklijke Philips Electronics N.V. | Display device based on immiscible fluids |
| CN1791824A (en) * | 2003-05-22 | 2006-06-21 | 皇家飞利浦电子股份有限公司 | Display device |
| CN1831566A (en) * | 2005-03-08 | 2006-09-13 | 索尼株式会社 | Optical device |
| CN105511073A (en) * | 2016-01-27 | 2016-04-20 | 京东方科技集团股份有限公司 | Display panel |
| CN107728309A (en) * | 2017-10-11 | 2018-02-23 | 重庆秉为科技有限公司 | A kind of electrowetting colour display device based on three primary colours spatial mixing method |
| CN108181706A (en) * | 2018-01-02 | 2018-06-19 | 京东方科技集团股份有限公司 | Display unit and its driving method, display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI471598B (en) * | 2012-08-13 | 2015-02-01 | Nat Univ Tsing Hua | Tunable transmissive display system with electro-wetting and interference |
-
2019
- 2019-04-29 CN CN201910355671.2A patent/CN110068922B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1742221A (en) * | 2003-01-27 | 2006-03-01 | 皇家飞利浦电子股份有限公司 | Display device |
| CN1791824A (en) * | 2003-05-22 | 2006-06-21 | 皇家飞利浦电子股份有限公司 | Display device |
| JP2005309216A (en) * | 2004-04-23 | 2005-11-04 | Casio Comput Co Ltd | Display device |
| WO2006021912A1 (en) * | 2004-08-26 | 2006-03-02 | Koninklijke Philips Electronics N.V. | Display device based on immiscible fluids |
| CN1831566A (en) * | 2005-03-08 | 2006-09-13 | 索尼株式会社 | Optical device |
| CN105511073A (en) * | 2016-01-27 | 2016-04-20 | 京东方科技集团股份有限公司 | Display panel |
| CN107728309A (en) * | 2017-10-11 | 2018-02-23 | 重庆秉为科技有限公司 | A kind of electrowetting colour display device based on three primary colours spatial mixing method |
| CN108181706A (en) * | 2018-01-02 | 2018-06-19 | 京东方科技集团股份有限公司 | Display unit and its driving method, display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110068922A (en) | 2019-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9070322B2 (en) | Electrofluidic chromatophore (EFC) display apparatus | |
| US7993819B2 (en) | Electrowetting display devices and fabrication methods thereof | |
| US7813030B2 (en) | Display and fabricating method thereof | |
| CN101493576B (en) | Electrowetting display apparatus and method for manufacturing same | |
| US20160274352A1 (en) | Electrowetting display device and method for preparing the same | |
| US20130141775A1 (en) | Electrowetting display panel and the manufacturing method thereof | |
| KR20120098183A (en) | Electro phoretic display and method for manufacturing the same | |
| TWI691773B (en) | Laminated electro-optic displays and methods of making the same | |
| US11728202B2 (en) | Element pickup device, method for manufacturing the same and method for using the same | |
| US9207449B2 (en) | Electrowetting display device, method of driving the same, and method of manufacturing the same | |
| CN105826249A (en) | Metal layer manufacturing method, functional substrate and manufacturing method thereof, and display device | |
| US9176315B2 (en) | Method for controlling optical transmissions, device for controlling optical transmissions, and method for manufacturing same | |
| JP2006243169A (en) | Image display device | |
| CN110068922B (en) | Interferometric modulation display panel, manufacturing method thereof, display device and display method | |
| CN109932815B (en) | Bistable electrowetting display substrate, preparation method thereof and display device | |
| CN106707500B (en) | A method of it preparing electrowetting and shows support plate | |
| US20130235445A1 (en) | Display element and electric device that uses the same | |
| JP2015022104A (en) | Display device and electronic apparatus | |
| US20100118253A1 (en) | Display panel and fabricating method thereof | |
| Zhou et al. | Inkjet-printed patterned polytitanosiloxane-fluoropolymer composite dielectric layer for micro-optical electrowetting valves | |
| JP5407334B2 (en) | Switching element substrate and manufacturing method thereof, electro-optical device, projector | |
| KR20020009269A (en) | Display device using micro light modulator | |
| TW201939148A (en) | Assemblies of electro-optic displays | |
| US11415732B2 (en) | Quantum dot display device and manufacturing method thereof | |
| US11139594B2 (en) | Connectors for electro-optic displays |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |