CN110055498B - Surface evaporation source, manufacturing method thereof, evaporation method and evaporation device - Google Patents
Surface evaporation source, manufacturing method thereof, evaporation method and evaporation device Download PDFInfo
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- CN110055498B CN110055498B CN201810054822.6A CN201810054822A CN110055498B CN 110055498 B CN110055498 B CN 110055498B CN 201810054822 A CN201810054822 A CN 201810054822A CN 110055498 B CN110055498 B CN 110055498B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention discloses a surface evaporation source and a manufacturing method thereof, an evaporation method and an evaporation device, and relates to the technical field of display, wherein the surface evaporation source is used for evaporating a material to be evaporated so that the material can form a thin film on a device substrate through an opening of an evaporation mask, and comprises a substrate, wherein an isolation wall structure is arranged on the substrate, and a plurality of first grooves which are separated from each other are formed on the substrate by the isolation wall structure; the first groove is used for bearing a material to be evaporated; during vapor deposition, the projection of the opening of the vapor deposition mask plate on the substrate at least covers the projection of one first groove on the substrate. The surface evaporation source can reduce the shadow area outside the opening area of the evaporation mask, effectively improve the accuracy of evaporation, reduce the color mixing problem among different pixels, further reduce the pixel size and support OLED display products with higher resolution.
Description
Technical Field
The invention relates to the field of display, in particular to a surface evaporation source, a manufacturing method thereof, an evaporation method and an evaporation device.
Background
An OLED (Organic Light Emitting Diode) display panel has the advantages of self-luminescence, fast response speed, lightness, thinness, capability of manufacturing flexible devices and the like.
The coating by vaporization technology is the key process of preparation OLED display panel, in the pixel coating by vaporization of high accuracy, can adopt the coating by vaporization mask version as sheltering from, the coating by vaporization material is from coating by vaporization mask version opening evaporation to the pixel position that corresponds on, but at present owing to adopt the mode of point source and line source, can produce relative motion between coating by vaporization source and the backplate, lead to that the coating by vaporization shadow region can appear behind the mask version, if the shadow region is too big, can lead to the colour mixture and the colour cast problem of pixel, reduce the precision that the shadow region just can effectively promote the coating by vaporization for this reason, and then reduce the pixel size, support the OLED product of higher resolution.
Meanwhile, in the aspect of the evaporation device, because a relatively large distance is required to be kept between the evaporation source and the device substrate, the chamber of the evaporation device is very large, the processing is difficult, the equipment is expensive, the vacuumizing time is long, and the evaporation process time is further long.
Disclosure of Invention
The invention aims to provide a surface evaporation source, a manufacturing method thereof, an evaporation method and an evaporation device, which can reduce the shadow area of evaporation, reduce the volume of the evaporation device and improve the production efficiency.
In order to achieve the above purpose, the invention provides the following technical scheme:
the utility model provides a face coating by vaporization source for the coating by vaporization material of treating makes its opening that can pass through the coating by vaporization mask version form the film on the device substrate, its characterized in that includes:
a substrate;
an isolation wall structure disposed on the substrate;
the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate;
the first groove is used for bearing a material to be evaporated;
the first grooves are configured in such a way that the projection of the opening of the evaporation mask on the substrate at least covers the projection of one first groove on the substrate during evaporation.
Preferably, the projection of the opening of the evaporation mask on the substrate covers the projection of the N first grooves on the substrate, where N is a positive integer.
Further, the projection of at least part of the first groove on the substrate is completely coincided with the projection of the opening of the evaporation mask on the substrate.
Preferably, the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are in the millimeter or micrometer range.
Further, the height of the isolation wall structure is greater than or equal to 10 micrometers.
Preferably, the surface evaporation source comprises an evaporation region and a film thickness test region;
the evaporation area is used for evaporating a material to be evaporated to the device substrate;
the film thickness test area is used for forming a film for detecting the thickness of the film.
Preferably, the substrate is transparent.
Further, a metal layer is arranged at the bottom of the first groove;
the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer;
the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove;
the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.
Further, a surface microstructure is formed on the upper surface of the metal layer;
the metal layer and the surface microstructure are of an integral structure.
Further, the surface microstructure is a grid structure;
the grid structure includes a plurality of second grooves formed on an upper surface of the metal layer;
the depth of the second groove is 0.5-0.6 microns, and the distance from the bottom surface of the second groove to the lower surface of the metal layer is 0.4-0.5 microns.
Preferably, the substrate and the isolation wall structure are of an integral structure.
The invention also provides a method for manufacturing the surface evaporation source, the surface evaporation source is used for evaporating a material to be evaporated, so that the material can form a thin film on a device substrate through the opening of the evaporation mask, and the method is characterized by comprising the following steps of:
providing a substrate;
forming an isolation wall structure on the substrate;
the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate;
the first groove is used for bearing a material to be evaporated;
the first grooves are configured in such a way that the projection of the opening of the evaporation mask on the substrate at least covers the projection of one first groove on the substrate during evaporation.
Further, the method for manufacturing the surface evaporation source further comprises the following steps:
and forming a metal layer at the bottom of the first groove.
Further, the method for manufacturing the surface evaporation source further comprises the following steps:
etching the upper surface of the metal layer to form a surface microstructure;
the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove.
Further, the method for etching the upper surface of the metal layer is dry etching.
Preferably, the method for forming the isolation wall structure on the substrate is to etch the substrate to form the isolation wall structure;
or, the method for forming the isolation wall structure on the substrate is to deposit an isolation wall structure material on the substrate and etch the isolation wall structure material to form the isolation wall structure.
The invention also provides an evaporation method, which comprises the following steps:
adopting a surface evaporation source for evaporation;
wherein the surface evaporation source comprises a substrate; an isolation wall structure disposed on the substrate; the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of the opening of the evaporation mask on the substrate at least covers the projection of one first groove on the substrate during evaporation.
Preferably, the evaporation method further includes:
arranging a device substrate on the opening side of the first groove of the surface evaporation source;
an evaporation mask is arranged between the surface evaporation source and the device substrate;
aligning the surface evaporation source with an evaporation mask plate and a device substrate;
the distance between the surface evaporation source and the evaporation mask is set to be millimeter or micron order;
the projection of the openings of the evaporation mask on the substrate covers the projection of the N first grooves on the substrate, and N is an integer.
Further, the projection of at least part of the first groove on the substrate is completely coincided with the projection of the opening of the evaporation mask on the substrate.
Preferably, the evaporation method further includes:
filling a material to be evaporated into the first groove of the surface evaporation source;
and after filling a material to be evaporated in the first groove of the surface evaporation source, removing the material to be evaporated above the isolation wall structure of the surface evaporation source.
Furthermore, the method for filling the material to be evaporated into the first groove of the surface evaporation source is to evaporate the material to be evaporated by using a point or line evaporation source so that the material to be evaporated is attached to the surface evaporation source.
Further, the evaporation method further includes:
and an opening of the first groove of the surface evaporation source is arranged downwards for evaporation.
Further, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source comprises the steps of removing the material to be evaporated above the isolation wall structure by oblique laser irradiation;
or the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is to stick the material to be evaporated above the isolation wall structure by attaching the film material with strong adhesive force to the upper surface of the surface evaporation source;
or, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is a method of removing the material to be evaporated above the isolation wall structure by using vacuum adsorption, and the material in the first groove is ensured not to be adsorbed away by controlling the gap between the vacuum part and the surface evaporation source.
Preferably, the evaporation method further includes:
heating the surface evaporation source for evaporation;
the method for heating the surface evaporation source adopts a surface heat source for heating.
Preferably, the surface evaporation source is heated for evaporation;
the method for heating the surface evaporation source comprises the steps of heating the surface evaporation source in a laser heating mode;
the laser heating mode is to irradiate a selected area of the surface evaporation source by laser and heat the selected area for evaporation.
The present invention also provides an evaporation apparatus, comprising:
any one of the above surface vapor deposition sources.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a first schematic structural diagram of a surface evaporation source according to an embodiment of the present invention;
FIG. 2 is a first drawing illustrating a relationship between a surface evaporation source and an evaporation mask, a device substrate and a film thickness meter according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a surface evaporation source according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a surface evaporation source according to a third embodiment of the present invention;
fig. 5 is a schematic structural diagram of a surface evaporation source according to a fourth embodiment of the present invention;
fig. 6 is a schematic view of vapor deposition by using a point or line vapor deposition source and filling a material to be vapor deposited into a surface vapor deposition source according to an embodiment of the present invention;
fig. 7 is a schematic view of an evaporation method in which an opening of a first groove of a surface evaporation source faces downward according to an embodiment of the present invention;
fig. 8 is a schematic diagram illustrating an embodiment of removing a material to be evaporated from a top of a spacer structure by oblique laser irradiation.
Reference numerals:
11-a partition wall structure, 12-a first groove,
2-vapor deposition mask, 3-device substrate,
4-film thickness gauge, 5-metal layer,
6-material to be evaporated, 7-laser.
Detailed Description
In order to further explain the surface evaporation source, the manufacturing method thereof, the evaporation method and the evaporation device provided by the embodiment of the invention, the following description is made in detail with reference to the drawings of the specification.
An embodiment of the present invention provides a surface evaporation source, configured to evaporate a material to be evaporated so that the material can form a thin film on a device substrate through an opening of an evaporation mask, as shown in fig. 1, where the surface evaporation source includes: the structure comprises a substrate, wherein an isolation wall structure 11 is arranged on the substrate, and a plurality of first grooves 12 which are separated from each other are formed on the substrate by the isolation wall structure. During vapor deposition, the surface vapor deposition source is heated, and a material to be vapor deposited in the first groove forms a thin film on the device substrate 3 through the opening of the vapor deposition mask 2. The projection of the opening of the evaporation mask 2 on the substrate at least covers the projection of one first groove 12 on the substrate. The surface evaporation source is different from a point source and a line source, does not need to move relative to the device substrate during evaporation, and can reduce the shadow area outside the opening area of the evaporation mask. Further, because the projection of the opening of evaporation mask 2 on the substrate covers a first recess 12 at least, the partition wall structure 11 can limit the diffusion of the steam flow that forms when the evaporation plating in the scope of the opening of evaporation mask to can reduce the shadow area outside the evaporation mask opening area, effectively promote the precision of evaporation plating, reduce the colour mixture problem between different pixels, and then can design littleer pixel size, support higher resolution's OLED display product. Meanwhile, the surface evaporation source can be closer to the evaporation mask and the device substrate, the distance between the surface evaporation source and the evaporation mask and the device substrate is reduced, the height of a cavity of the evaporation device can be greatly reduced, the volume of a cavity of the evaporation device is reduced, the time required by vacuumizing is further reduced, and the time of an evaporation process is shortened. The smaller volume of the evaporation device chamber can also reduce the amount of material deposited outside the range of the device substrate, and reduce the material consumption.
The term "on-substrate" as used herein may refer to a portion above a substrate or an upper portion of a substrate.
Furthermore, the projection of the opening of the evaporation mask on the substrate covers the projection of the N first grooves on the substrate, wherein N is a positive integer. And the position opposite to the edge of the opening range of the evaporation mask is provided with a separation wall, so that the diffusion of steam flow at the edge can be limited, and a shadow area is reduced. Meanwhile, a plurality of partition wall structures are arranged in the opening range of the evaporation mask plate, so that steam flow can be further limited in a fixed direction, and the aim of reducing a shadow area is better fulfilled.
Further, as shown in fig. 2, a projection of at least a portion of the first groove on the substrate may completely coincide with a projection of the opening of the evaporation mask on the substrate. Namely, during evaporation, the first grooves of the surface evaporation source can correspond to the openings of the evaporation mask plate one by one, and the region where the isolation wall structure is located corresponds to the shielding region of the evaporation mask plate; or a part of the first grooves correspond to the shielding areas of the evaporation mask plate, and the other first grooves correspond to the openings of the evaporation mask plate one to one.
In fig. 1, the height h of the isolation wall structure 11 and the characteristic dimension w of the bottom surface of the first groove 12 are in the order of millimeters or micrometers. The size of the sub-pixels of the OLED display panel is typically tens of microns to tens of microns, i.e. the openings of the evaporation mask 2 are also of the order of millimeters or microns. The first groove opening is smaller, and the isolation wall structure has a certain height compared with the characteristic size of the smaller first groove opening, so that the diffusion of steam flow formed in evaporation can be finely controlled. The shadow area outside the opening area of the evaporation mask plate can be reduced, and the accuracy of evaporation is effectively improved.
Furthermore, the height h of the partition wall structure 11 is greater than or equal to 10 micrometers, so that the partition wall structure has a certain height compared with the characteristic size of the bottom surface of the first groove, and the steam flow diffusion can be effectively limited.
The characteristic dimension of the bottom surface in the present invention means the maximum value of the distance between any two points on the bottom surface. The millimeter or micrometer level in the present invention means any value in the size range of 10 mm or less and 0.1 micrometer or more.
Preferably, as shown in fig. 3, the surface evaporation source includes an evaporation region a and a film thickness test region B. During vapor deposition, the vapor deposition area A is arranged corresponding to the device substrate 3 and is used for vapor deposition of a material to be vapor deposited to the device substrate 3. The film thickness test area B is correspondingly provided with a film thickness gauge 4 for forming a film for detecting the thickness of the film on a probe of the film thickness gauge so as to detect the thickness of the film.
Preferably, the substrate is transparent. When the substrate is heated by laser light, the laser light can pass through the substrate to heat the portion to be heated. Specifically, the substrate can be a high-transmittance glass substrate, and in the laser transmission process, the absorption is small, the laser energy loss is small, and more laser energy can be used for heating.
Further, as shown in fig. 4, the bottom of the first groove is also provided with a metal layer 5. When the surface evaporation source is heated by a laser heating mode, laser passes through the transparent substrate and is absorbed by the metal layer to generate heat to heat the surface evaporation source.
Further, the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer;
the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove;
the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.
Further, as shown in fig. 5, the upper surface of the metal layer may further have a surface microstructure, the surface microstructure is directly formed by etching the surface of the metal layer, and the metal layer and the surface microstructure are integrated. The purpose of making the surface microstructure is to increase the contact area between the surface evaporation source and the material to be evaporated, so that the heat can be quickly conducted. Specifically, the surface microstructure may be a grid structure, and the grid structure forms a plurality of second grooves. The size of the grid structure can be comprehensively considered according to the size of the first groove of the surface evaporation source and the amount of the material to be evaporated to be filled. For example, the depth of the second groove may be 0.5 to 0.6 micrometers, the distance from the bottom surface of the second groove to the lower surface of the metal layer may be 0.4 to 0.5 micrometers, and the total thickness may be within 1 micrometer. Since the thickness of the general evaporation material is below 0.2um, the micro-grid can meet the thickness requirement of the evaporation material. The metal material used includes metals such as Ti, Al, and the like, or alloys thereof, and the like.
The embodiment of the invention also provides a method for manufacturing the surface evaporation source, wherein the surface evaporation source is used for evaporating a material to be evaporated so that the material can form a thin film on a device substrate through the opening of the evaporation mask, and the method is characterized by comprising the following steps of:
providing a substrate;
forming an isolation wall structure on the substrate;
the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate;
the first groove is used for bearing a material to be evaporated;
the first grooves are configured in such a way that the projection of the opening of the evaporation mask on the substrate at least covers the projection of one first groove on the substrate during evaporation.
Preferably, the method for forming the isolation wall structure on the substrate is to etch the substrate to form the isolation wall structure;
or, the method for forming the isolation wall structure on the substrate is to deposit an isolation wall structure material on the substrate and etch the isolation wall structure material to form the isolation wall structure.
The above two modes can be specifically selected according to actual requirements.
Further, the method for manufacturing the surface evaporation source further comprises the following steps:
and forming a metal layer at the bottom of the first groove.
Further, the method for manufacturing the surface evaporation source further comprises the following steps:
etching the upper surface of the metal layer to form a surface microstructure;
the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove. The manner of forming the first recess is different, and the manner and the process steps of forming the metal layer may be different, for example:
the metal layer can be formed by forming a first groove, depositing the metal layer, removing the unnecessary part of the metal layer by patterning, and etching the upper surface of the metal layer at the bottom of the first groove to form a surface microstructure.
The method for forming the metal layer can also be that the metal layer is deposited on the substrate, the unnecessary part of the metal layer is removed in a patterning mode, and the upper surface of the metal layer is etched to form a surface microstructure. And then depositing an isolation wall structure material. And etching the isolation wall structure material to form an isolation wall structure, wherein the isolation wall structure forms a plurality of mutually separated first grooves on the substrate. And after etching, the bottom of the formed first groove is a metal layer with a surface microstructure.
And etching the upper surface of the metal layer by a dry etching method. Compared with wet etching, the dry etching can be used for forming a surface microstructure on the surface of the metal layer and not etching through the metal layer.
The embodiment of the invention also provides an evaporation method, which comprises the following steps:
s1: filling a material to be evaporated in the first groove of the surface evaporation source;
s2: arranging a device substrate on the opening side of the first groove of the surface evaporation source;
s3: an evaporation mask is arranged between the surface evaporation source and the device substrate;
s4, aligning the surface evaporation source with the evaporation mask and the device substrate;
s5: the heating surface evaporation source performs evaporation, and the evaporation is performed in a high vacuum environment.
Wherein the surface evaporation source comprises a substrate; an isolation wall structure disposed on the substrate; the isolation wall structure forms a plurality of mutually separated first grooves on the substrate; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of the opening of the evaporation mask on the substrate at least covers the projection of one first groove on the substrate during evaporation.
The projection of the opening of the evaporation mask on the substrate can cover the projection of the N first grooves on the substrate, and N is an integer.
Further, the projection of at least part of the first groove on the substrate is completely coincided with the projection of the opening of the evaporation mask on the substrate.
Preferably, as shown in fig. 1, the distance d between the surface evaporation source and the evaporation mask is set to be in the order of millimeters or micrometers. The distance d between the surface evaporation source and the evaporation mask plate is the distance between the upper surface of the isolation wall structure of the surface evaporation source and the lower surface of the evaporation mask plate. In the vapor deposition, although the diffusion of the vapor flow is limited by the structure of the partition wall of the surface vapor deposition source and kept within a certain range, if the distance between the surface vapor deposition source and the vapor deposition mask is too long, the effect of limiting the vapor flow is remarkably reduced. Set up the distance between face coating by vaporization source and the coating by vaporization mask version into millimeter or micron magnitude, guaranteed that face coating by vaporization source can be better the performance to the restriction effect of steam flow, reduce the shadow area outside the coating by vaporization mask version opening area, effectively promote the precision of coating by vaporization, reduce the colour mixture problem between different pixels, and then can design littleer pixel size, support higher resolution's OLED display product. Meanwhile, the surface evaporation source is closer to the evaporation mask plate and the device substrate, the height of the cavity of the evaporation device can be greatly reduced, the volume of the cavity of the evaporation device is reduced, the time required by vacuumizing is further reduced, and the time of the evaporation process is shortened. The smaller volume of the evaporation device chamber can also reduce the amount of material deposited outside the range of the device substrate, and reduce the material consumption.
The surface evaporation source can comprise an evaporation area and a film thickness test area. The evaporation area is correspondingly provided with the device substrate, and the material to be evaporated is evaporated on the device substrate through the opening of the evaporation mask plate; the film thickness test area is correspondingly provided with a film thickness meter for monitoring the thickness of the evaporated film.
Further, as shown in fig. 6, a method for filling the material to be vapor-deposited into the first groove of the surface vapor deposition source is to vapor-deposit the material to be vapor-deposited by using a dot or line vapor deposition source, so that the material to be vapor-deposited 6 adheres to the surface vapor deposition source. The thickness of the material to be evaporated, which is attached to the surface evaporation source, can be adjusted according to actual requirements. Meanwhile, in the evaporation process, the evaporation speed is kept consistent, the moving speed of the point or line evaporation source is uniform, the uniformity of the thickness of the material to be evaporated in each first groove is ensured by the method for filling the material to be evaporated into the surface evaporation source, and the uniform and compact film can be obtained when the surface evaporation source is used for evaporation. And the material to be evaporated is attached to the surface evaporation source, which is equivalent to one-time material sublimation purification, so that the material purity of the film obtained by evaporation of the surface evaporation source is improved, and the performance of the device prepared by evaporation is improved. In the dot or line evaporation source used in the prior art, a certain distance needs to be kept between the evaporation source and the device substrate in order to achieve uniformity of the evaporated film. This embodiment evaporation source treats the thickness of coating by vaporization material because in each first recess is even, has guaranteed that the coating by vaporization speed of each recess of face coating by vaporization source is even. When uniformity is guaranteed, the surface evaporation source can be arranged very close to the evaporation mask and the device substrate, and the distance can be millimeter or micron. Because the opening of the evaporation mask for OLED display is also in millimeter or micron order, the isolation wall structure can accurately control the diffusion of steam flow formed during evaporation, the shadow area outside the opening area of the evaporation mask can be reduced, the accuracy of evaporation is effectively improved, the color mixing problem among different pixels is reduced, the pixel size is reduced, and the OLED display product with higher resolution is supported. And, because the face coating by vaporization source can be more close to coating by vaporization mask version and device substrate setting, the distance can be millimeter or micron magnitude, and the cavity of coating by vaporization device can reduce the height by a wide margin, reduces the volume of coating by vaporization device cavity, and then reduces the required time of evacuation, and it is long when the reduction coating by vaporization technology. The smaller volume of the evaporation device chamber can also reduce the amount of material deposited outside the range of the device substrate, and reduce the material consumption.
In the above manner, when the material to be vapor-deposited is filled in the first groove of the surface vapor-deposition source, after the material to be vapor-deposited above the barrier wall structure of the surface vapor-deposition source is removed, as shown in fig. 7, the opening of the first groove of the surface vapor-deposition source may be disposed downward for vapor deposition. The material to be vapor-deposited 6 is attached to the surface vapor-deposition source in the form of a thin film, and therefore, the material to be vapor-deposited 6 does not fall off in the subsequent entire setting and vapor-deposition process. The evaporation mask 2 and the device substrate 3 are sequentially arranged below the surface evaporation source. During vapor deposition, the generated vapor flow passes downward through the openings of the vapor deposition mask 2 and is deposited on the device substrate. The steam air current that the direction is decurrent, the restriction of the enclosure structure of faying face coating by vaporization source to steam air current direction compares in the upwards condition that sets up of the opening of the recess of face coating by vaporization source, can further reduce the outer shadow area of coating by vaporization mask plate opening area, effectively promotes the precision of coating by vaporization.
It should be noted that "downward" in the "opening of the first groove is downward" herein means downward in the direction of gravity.
In the above embodiment, the manner of removing the material to be evaporated above the isolation wall structure of the surface evaporation source may be selected according to actual needs, including but not limited to the following three:
as shown in fig. 8, the first method for removing the material to be vapor-deposited above the barrier wall structure of the surface vapor deposition source may be to remove the material to be vapor-deposited above the barrier wall structure of the surface vapor deposition source by oblique irradiation with laser light 7. The whole surface evaporation source is scanned by the laser inclined at a certain angle, and the laser can only irradiate the upper part of the isolation wall structure but cannot irradiate the bottom of the first groove, so that the material to be evaporated above the isolation wall structure is removed, and the material in the first groove is reserved. The specific angle of the scanning laser can be selected according to the specific size of the first groove of the surface evaporation source, for example, the included angle between the scanning laser and the normal direction of the surface evaporation source plane is 70-80 degrees.
Get rid of the mode two of waiting the coating by vaporization material above the enclosure structure of face coating by vaporization source, can be for the film material through the adhesive force is strong, attached at face coating by vaporization source upper surface, with waiting the coating by vaporization material to stick except that the enclosure structure top of face coating by vaporization source.
And a third mode of removing the material to be evaporated above the isolation wall structure of the surface evaporation source can be to remove the material to be evaporated above the isolation wall structure of the surface evaporation source by using a vacuum adsorption method, and ensure that the material in the first groove is not adsorbed away by controlling the gap between the vacuum part and the surface evaporation source.
The method for heating the surface evaporation source for evaporation can be, optionally, heating the surface evaporation source by using a surface heat source.
The method for heating the surface evaporation source for evaporation can also be to heat the surface evaporation source in a laser scanning manner. The speed and intensity of the laser scanning are determined so that the uniformity of the evaporation can be ensured.
The laser heating method is adopted, and laser scanning can be adopted to select areas for accurate evaporation. Due to the very good directivity of the laser, the area irradiated by the laser can be precisely controlled. Therefore, the material to be evaporated in the first groove can be evaporated by controlling the range of the irradiation region and heating the partial surface evaporation source. The steam flow is controlled by the separation wall structure matched with the surface evaporation source, and the patterned film can be obtained by evaporation without matching with an evaporation mask. Moreover, the heating rate can be controlled by controlling the intensity, scanning speed and the like of the laser, and films with different thicknesses can be obtained at different evaporation rates.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (21)
1. The utility model provides a face coating by vaporization source for the coating by vaporization treats coating by vaporization material, makes its opening that can pass through the coating by vaporization mask version form the film on the device substrate, its characterized in that includes:
a substrate, the substrate being transparent;
the isolation wall structure is fixedly arranged on the substrate;
the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in the dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer;
the metal layer is arranged at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.
2. The surface evaporation source according to claim 1, wherein the projection of at least part of the first recess on the substrate is completely coincident with the projection of the opening of the evaporation mask on the substrate.
3. The surface evaporation source according to claim 1, wherein the height of the partition wall structure is greater than or equal to 10 μm.
4. The source of claim 1, wherein the source comprises an evaporation zone and a film thickness test zone;
the evaporation area is used for evaporating a material to be evaporated to the device substrate;
the film thickness test area is used for forming a film for detecting the thickness of the film.
5. The source of claim 1, wherein the metal layer has a surface microstructure formed on an upper surface thereof;
the metal layer and the surface microstructure are of an integral structure.
6. The surface evaporation source according to claim 5, wherein the surface microstructure is a grid structure;
the grid structure includes a plurality of second grooves formed on an upper surface of the metal layer;
the depth of the second groove is 0.5-0.6 microns, and the distance from the bottom surface of the second groove to the lower surface of the metal layer is 0.4-0.5 microns.
7. The surface evaporation source according to claim 1, wherein the substrate and the isolation wall structure are of a unitary structure.
8. A method for manufacturing a surface evaporation source, which is used for evaporating a material to be evaporated so that the material can form a thin film on a device substrate through an opening of an evaporation mask, is characterized by comprising the following steps of:
providing a substrate, wherein the substrate is transparent;
forming an isolation wall structure on the substrate;
the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in the dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer;
forming a metal layer at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the bottom surface, far away from the first groove, of the metal layer; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.
9. The method of claim 8, further comprising:
etching the upper surface of the metal layer to form a surface microstructure;
the upper surface of the metal layer is the surface of the bottom surface, far away from the first groove, of the metal layer.
10. The method of claim 9, wherein the etching the upper surface of the metal layer is dry etching.
11. The method of claim 9, wherein the method comprises:
the method for forming the isolation wall structure on the substrate comprises the steps of etching the substrate to form the isolation wall structure;
or, the method for forming the isolation wall structure on the substrate is to deposit an isolation wall structure material on the substrate and etch the isolation wall structure material to form the isolation wall structure.
12. An evaporation method, comprising:
adopting a surface evaporation source for evaporation;
the surface evaporation source is used for evaporating a material to be evaporated, so that the material can form a thin film on the device substrate through an opening of an evaporation mask, and the surface evaporation source comprises a substrate which is transparent; the isolation wall structure is fixedly arranged on the substrate; the isolation wall structure forms a plurality of first grooves which are separated from each other on the substrate; the height of the isolation wall structure and the characteristic dimension of the bottom surface of the first groove are any numerical value in a dimension range of being less than or equal to 10 millimeters and greater than or equal to 0.1 micrometer; the first groove is used for bearing a material to be evaporated; the first grooves are configured in such a way that the projection of one opening of the evaporation mask on the substrate covers the projection of N first grooves on the substrate during evaporation, wherein N is a positive integer; the metal layer is arranged at the bottom of the first groove; the maximum distance from the upper surface of the metal layer to the lower surface of the metal layer is less than or equal to 1 micrometer; the upper surface of the metal layer is the surface of the metal layer, which is far away from the bottom surface of the first groove; the lower surface of the metal layer is a surface of the metal layer which is in contact with the bottom surface of the first groove.
13. The vapor deposition method according to claim 12, further comprising:
arranging a device substrate on the opening side of the first groove of the surface evaporation source;
an evaporation mask is arranged between the surface evaporation source and the device substrate;
aligning the surface evaporation source with an evaporation mask plate and a device substrate;
wherein, the distance between the surface evaporation source and the evaporation mask is set to be millimeter or micron magnitude.
14. A vapor deposition method according to claim 13, wherein a projection of at least part of the first recess on the substrate completely coincides with a projection of the opening of the vapor deposition mask on the substrate.
15. A vapor deposition method according to claim 12, further comprising:
filling a material to be evaporated into the first groove of the surface evaporation source;
and after filling a material to be evaporated in the first groove of the surface evaporation source, removing the material to be evaporated above the isolation wall structure of the surface evaporation source.
16. A deposition method according to claim 15, wherein the first groove of the surface deposition source is filled with a material to be deposited by a dot or line deposition source, and the material to be deposited is attached to the surface deposition source.
17. A vapor deposition method according to claim 16, further comprising:
and an opening of the first groove of the surface evaporation source is arranged downwards for evaporation.
18. A vapor deposition method according to claim 15, wherein:
the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source comprises the steps of removing the material to be evaporated above the isolation wall structure by oblique laser irradiation;
or, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is to stick and remove the material to be evaporated above the isolation wall structure by attaching the film material with strong adhesive force to the upper surface of the surface evaporation source;
or, the method for removing the material to be evaporated above the isolation wall structure of the surface evaporation source is a method of removing the material to be evaporated above the isolation wall structure by using vacuum adsorption, and the material in the first groove is ensured not to be adsorbed away by controlling the gap between the vacuum part and the surface evaporation source.
19. A vapor deposition method according to claim 12, further comprising:
heating the surface evaporation source for evaporation;
the method for heating the surface evaporation source adopts a surface heat source for heating.
20. A vapor deposition method according to claim 12, further comprising:
heating the surface evaporation source for evaporation;
the method for heating the surface evaporation source comprises the steps of heating the surface evaporation source in a laser heating mode;
the laser heating mode is to irradiate a selected area of the surface evaporation source by laser and heat the selected area for evaporation.
21. An evaporation apparatus, comprising:
the surface evaporation source according to any one of claims 1 to 7.
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| CN115287603B (en) * | 2022-08-02 | 2023-09-12 | 广东广纳芯科技有限公司 | Vapor deposition method |
| CN116162894A (en) * | 2023-02-28 | 2023-05-26 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
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