CN110047893A - A kind of organic light emitting diode display and preparation method thereof - Google Patents
A kind of organic light emitting diode display and preparation method thereof Download PDFInfo
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- CN110047893A CN110047893A CN201910328239.4A CN201910328239A CN110047893A CN 110047893 A CN110047893 A CN 110047893A CN 201910328239 A CN201910328239 A CN 201910328239A CN 110047893 A CN110047893 A CN 110047893A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention provides a kind of organic light emitting diode display and preparation method thereof, this method comprises: making anode and auxiliary electrode on underlay substrate；In the anode, the auxiliary electrode and pixel defining layer is not formed on underlay substrate that the anode and the auxiliary electrode cover；Pixel openings are formed corresponding to the position of the anode in the pixel defining layer；Groove is formed corresponding to the position of the auxiliary electrode in the pixel defining layer；Organic function layer is formed being located in the pixel openings；Electron transfer layer is formed in the region of the anode-side and in the pixel defining layer in the organic function layer, the groove；The region that electron transfer layer is wherein not filled in the groove forms connecting hole；Cathode is formed in the connecting hole on the electron transport layer.Organic light emitting diode display of the invention and preparation method thereof can be improved display effect.
Description
[technical field]
The present invention relates to field of display technology, more particularly to a kind of organic light emitting diode display and its production side
Method.
[background technique]
Compared with passively luminous liquid crystal display (LCD), from the organic light emitting diode display of main light emission
(Organic Light-Emitting Diode, OLED) has many advantages, such as that fast response time, contrast are high, visual angle is wide, and
Flexible Displays easy to accomplish, it is commonly used.OLED display very likely becomes the main product of next-generation display technology.
Traditional OLED uses vacuum evaporation technology, but the technology needs to lead to material use using fine mask
Rate is low；In addition, if the preparation process of mask endures challenge to the fullest extent for large size panel.In recent years, it was sprayed in typographical display technology
Ink printing (Ink jet printing, IJP) quickly grow, IJP be OLED realize large scale and low cost production it is best
Approach.
However, the common cathode material of current Top-emission is while realizing compared with high transmittance, resistance all compares
It is larger, namely its electric conductivity is reduced, so as to cause large scale OLED in display, generate more serious voltage drop (IR-
Drop) phenomenon, existing settling mode be increase auxiliary electrode, but due to cathode and the direct contact area of auxiliary electrode compared with
Greatly, it cannot be effectively reduced pressure drop, cause panel non-uniform light, reduce display effect.
Therefore, it is necessary to a kind of organic light emitting diode display and preparation method thereof be provided, to solve prior art institute
There are the problem of.
[summary of the invention]
The purpose of the present invention is to provide a kind of organic light emitting diode displays and preparation method thereof, can be improved luminous
Uniformity and display effect.
In order to solve the above technical problems, the present invention provides a kind of production method of organic light emitting diode display, packet
It includes:
Conductive layer is made on underlay substrate, and patterned process is carried out to the conductive layer and forms anode and auxiliary electrode；
In the anode, the auxiliary electrode and by the anode and the underlay substrate of auxiliary electrode covering
Form pixel defining layer；
Pixel openings are formed corresponding to the position of the anode in the pixel defining layer；In the pixel defining layer
Position corresponding to the auxiliary electrode forms groove；
Organic function layer is formed being located in the pixel openings；
In the organic function layer, the groove in the region of the anode-side and in the pixel defining layer
Form electron transfer layer；The region that electron transfer layer is wherein not filled in the groove forms connecting hole；
On the electron transport layer with form cathode in the connecting hole, the cathode by the connecting hole with it is described
Auxiliary electrode connection.
The present invention also provides a kind of organic light emitting diode displays comprising:
Underlay substrate；
Conductive layer is set on the underlay substrate, and the conductive layer includes anode and auxiliary electrode；
Pixel defining layer is not covered set on the anode, the auxiliary electrode and by the anode and the auxiliary electrode
On the underlay substrate of lid；Position corresponding with the anode is provided with pixel openings in the pixel defining layer；The pixel is fixed
Position setting corresponding with the auxiliary electrode is fluted on adopted layer；
Organic function layer is set in the pixel openings；
Electron transfer layer, in the organic function layer, the groove close to the anode-side region in and institute
It states in pixel defining layer；
Cathode is set on the electron transfer layer and in connecting hole, and the cathode passes through the connecting hole and the auxiliary
Electrode connection, wherein the connecting hole is the region for being not filled with electron transfer layer in the groove.
Organic light emitting diode display of the invention and preparation method thereof, by corresponding in the pixel defining layer
The position of anode forms pixel openings；Groove is formed corresponding to the position of auxiliary electrode in the pixel defining layer；It is being located at
Organic function layer is formed in the pixel openings；Close to the region of the anode-side in the organic function layer, the groove
Electron transfer layer is formed in the interior and described pixel defining layer；The region shape of electron transfer layer is wherein not filled in the groove
At connecting hole；On the electron transport layer with form cathode in the connecting hole, the cathode passes through the connecting hole and institute
Auxiliary electrode connection is stated, thus reduces the contact area between cathode and auxiliary electrode, so that pressure drop is reduced, so that panel
It shines uniformly, improves display effect.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the production method of existing organic light emitting diode display；
Fig. 2 be organic light emitting diode display of the present invention production method the first step to third step structural representation
Figure；
Fig. 3 is the structural schematic diagram that the third step of the production method of organic light emitting diode display of the present invention has made；
Fig. 4 is the structural schematic diagram of the 4th step of the production method of organic light emitting diode display of the present invention；
Fig. 5 is the structural schematic diagram of the 5th step of the production method of organic light emitting diode display of the present invention；
Fig. 6 is the structural schematic diagram of the 6th step of the production method of organic light emitting diode display of the present invention.
[specific embodiment]
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is to be given the same reference numerals in the figure.
As shown in Figure 1, existing organic light emitting diode display 100 is fixed including underlay substrate 11, conductive layer 12, pixel
Adopted layer 13, organic function layer 20, electron transfer layer 14 and cathode 15.The conductive layer 12 includes anode 121 and auxiliary electrode
122, cathode 15 is connect by electron transfer layer 14 with auxiliary electrode 122, but since cathode 15 and auxiliary electrode 122 are direct
Contact area is larger, cannot be effectively reduced pressure drop.
Referring to figure 2. to the first step for the production method that 6, Fig. 2 is organic light emitting diode display of the present invention to third
The structural schematic diagram of step.
As shown in Fig. 2, the production method of organic light emitting diode display of the invention includes:
S101, conductive layer is made on underlay substrate, patterned process is carried out to the conductive layer and forms anode and auxiliary
Electrode；
As shown in Fig. 2, for example, flood conductive layer 12 is made on underlay substrate 11, to the conductive layer 12 progress pattern
Change processing formation anode 121 and auxiliary electrode 122, the material of the conductive layer 12 can be metal material or tin indium oxide.Its
Middle underlay substrate 11 includes glass substrate and the switch arrays layer on glass substrate, and switch arrays layer includes multiple films
Transistor, anode 121 are connect with the drain electrode of thin film transistor (TFT).
S102, in the anode, the auxiliary electrode and the substrate that is not covered by the anode and the auxiliary electrode
Pixel defining layer is formed on substrate；
As shown in Fig. 2, in the anode 121, the auxiliary electrode 122 and not by the anode 121 and the auxiliary
Pixel defining layer 13 is formed on the underlay substrate 11 that electrode 122 covers.The material of the pixel defining layer 13 can be positivity photoresist
Material, for example be Nissan (Nissan) positive working materials.
S103, the position for corresponding to the anode in the pixel defining layer form pixel openings and in the pixels
Groove is formed corresponding to the position of the auxiliary electrode on definition layer；
As shown in Fig. 2, patterned process is carried out to the pixel defining layer 13, to be the corresponding position of the anode 121
It sets to form pixel openings 131, while forming interstitial area 132 ' in position corresponding with the auxiliary electrode 122.
Namely above-mentioned steps S103, comprising:
S1031, patterned process is carried out to pixel defining layer, so that pixel defining layer shape corresponding with the auxiliary electrode
The the first pixel definition unit and the second pixel definition unit being arranged at interval；
For example, patterned process is carried out to pixel defining layer 13, so that pixel definition corresponding with the auxiliary electrode 122
Layer 13 forms spaced first pixel definition unit 135 and the second pixel definition unit 136；Furthermore to pixel defining layer 13
Patterned process is carried out, third pixel unit 134 can be also formed.Second pixel unit 136 apart from anode 121 farther out.
S1032, the second pixel definition unit is performed etching, forms groove.
As shown in Figures 2 and 3, for example, being performed etching to the second pixel definition unit 136, to form groove 132.Its
In be specifically that partial sidewall by the second pixel definition unit 136 close to 135 side of the first pixel definition unit etches away.
In one embodiment, the shape of the longitudinal section of the groove 132 is parallelogram.It will of course be understood that,
The shape of the groove is not limited to parallelogram, can also be other shapes, as long as can reduce between cathode and auxiliary electrode
Contact area.
Wherein, in order to improve the precision of etching, the groove 132 is fixed to second pixel using laser ablation mode
Adopted unit 136, which performs etching, to be formed；Where laser beam 30 used in the laser ablation and the auxiliary electrode 122
The range of angle a between plane is greater than 40 ° less than 180 °.
S104, organic function layer is being formed in the pixel openings；
As shown in figure 4, organic function layer 20 is set on the anode 121, and the organic function layer 20 is located at the picture
In element opening 131.Organic function layer 20 includes the hole injection layer 21 being sequentially located on anode 12, hole transmission layer 22 and has
Machine luminescent layer 23.
Wherein, in order to improve the service life of display, the height of the pixel defining layer 13 is higher than organic function layer 20
Height namely the pixel defining layer 13 upper surface height be higher than the organic function layer 20 upper surface height,
Preferably to protect Organic Light Emitting Diode.
In one embodiment, the organic function layer 20 is made and to be formed by inkjet printing mode or vapor deposition mode
's.
S105, in the organic function layer, the groove close to the anode-side region in and do not had by described
Electron transfer layer is formed in the pixel defining layer of machine functional layer covering；The area of electron transfer layer is wherein not filled in the groove
Domain forms connecting hole；
In conjunction with Fig. 5 and Fig. 4, close to the region of 121 side of anode in the organic function layer 20, the groove 132
Electron transfer layer 31 is formed in interior (for example being located in the left area of the groove 132) and pixel defining layer 13；Wherein institute
State the region formation connecting hole 40 that electron transfer layer is not filled in groove 132.
Wherein, the electron transfer layer 31 covers the bottom of the first pixel definition unit 135 and the part groove 132
Portion, the connecting hole 40 is close to 136 side of the second pixel unit.Namely the connecting hole 40 is located at the right side of the groove 132
Side region.In other words, the electron transfer layer 31 is located in a side region of the groove 132, and connecting hole 40 is by being not filled by
There is the formation of groove 132 of electron transfer layer 31.
Wherein, the electron transfer layer 31 makes to be formed using vapor deposition mode, the vapor deposition of the electron transfer layer 31
Angle b range between the plane at 11 place of used evaporation source and the underlay substrate in the process is to be less than greater than 0 °
40°.Arrow direction represents the vapor deposition direction of the evaporation source of electron transfer layer 31 in Fig. 5, and dotted line indicates 11 place of underlay substrate
Plane.
Evaporation source used in during the vapor deposition of the electron transfer layer 31 is line source.Namely using line source to the electricity
Sub- transmitting layer 31 is deposited.
S106, on the electron transport layer with the connecting hole in formed cathode, the cathode pass through the connecting hole
It is connect with the auxiliary electrode.
In conjunction with Fig. 5 and Fig. 6, cathode 32, the cathode are formed on the electron transfer layer 31 and in the connecting hole 40
32 are connect by the connecting hole 40 with the auxiliary electrode 122.
Wherein, the cathode 32 makes to be formed using vapor deposition mode, and the cathode 32 is used in vapor deposition process
Evaporation source and the underlay substrate 11 where plane between the range of angle c be greater than 40 ° less than 180 °.Arrow in Fig. 6
Head direction represents the vapor deposition direction of the evaporation source of cathode 32, and dotted line indicates the plane where underlay substrate 11.The material of cathode 15
It is indium-zinc oxide (IZO) either Mg/Ag laminated film.
Due to filling electron transfer layer in the region of the anode-side in a groove, so that cathode and auxiliary electricity
Contact area between pole becomes smaller, and reduces the impedance of cathode, to reduce pressure drop, so that panel shines uniformly, improves
Display effect.
In conjunction with Fig. 1 to 6, the present invention also provides a kind of organic light emitting diode displays comprising:
Underlay substrate 11, conductive layer 12, pixel defining layer 13, organic function layer 20, electron transfer layer 31 and cathode 32；
Conductive layer 12 is set on the underlay substrate 11, and the conductive layer 12 includes anode 121 and auxiliary electrode 122.
Pixel defining layer 13 is set to the anode 121, the auxiliary electrode 122 and not by the anode 121 and described
On the underlay substrate 11 that auxiliary electrode 122 covers；Position corresponding with the anode 121 is provided in the pixel defining layer 13
Pixel openings 131；Position setting fluted 132 corresponding with the auxiliary electrode 122 in the pixel defining layer 13；
Organic function layer 20 is set in the pixel openings 131；
Electron transfer layer 31 is in the organic function layer 20, the groove 132 close to the region of 121 side of anode
In the interior and described pixel defining layer 13.
Cathode 32 be set to the electron transfer layer 31 on and the connecting hole 40 in, the cathode 32 by connecting hole 40 with
The auxiliary electrode 122 connects, and wherein connecting hole 40 is the region that electron transfer layer 31 is not filled in the groove 132.
Wherein, the contact area between cathode 32 and the auxiliary electrode 122 of the invention is less than preset area.
Organic light emitting diode display of the invention can be used above-mentioned production method and be prepared.
Organic light emitting diode display of the invention and preparation method thereof, by corresponding in the pixel defining layer
The position of anode forms pixel openings；Groove is formed corresponding to the position of auxiliary electrode in the pixel defining layer；It is being located at
Organic function layer is formed in the pixel openings；Close to the region of the anode-side in the organic function layer, the groove
Electron transfer layer is formed in the interior and described pixel defining layer；The region shape of electron transfer layer is wherein not filled in the groove
At connecting hole；On the electron transport layer with form cathode in the connecting hole, the cathode passes through the connecting hole and institute
Auxiliary electrode connection is stated, thus reduces the contact area between cathode and auxiliary electrode, so that pressure drop is reduced, so that panel
It shines uniformly, improves display effect.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (11)
1. a kind of production method of organic light emitting diode display characterized by comprising
Conductive layer is made on underlay substrate, and patterned process is carried out to the conductive layer and forms anode and auxiliary electrode；
It is not formed in the anode, the auxiliary electrode and on underlay substrate that the anode and the auxiliary electrode cover
Pixel defining layer；
Pixel openings are formed corresponding to the position of the anode in the pixel defining layer；It is corresponding in the pixel defining layer
Groove is formed in the position of the auxiliary electrode；
Organic function layer is formed being located in the pixel openings；
It is formed in the region of the anode-side and in the pixel defining layer in the organic function layer, the groove
Electron transfer layer；The region that electron transfer layer is wherein not filled in the groove forms connecting hole；
On the electron transport layer with cathode is formed in the connecting hole, the cathode passes through the connecting hole and the auxiliary
Electrode connection.
2. the production method of organic light emitting diode display according to claim 1, which is characterized in that described described
In pixel defining layer corresponding to the auxiliary electrode position formed groove the step of include:
Patterned process is carried out to pixel defining layer, so that pixel defining layer corresponding with the auxiliary electrode forms interval setting
The first pixel definition unit and the second pixel definition unit；First pixel unit is close to the anode；
The second pixel definition unit is performed etching, groove is formed.
3. the production method of organic light emitting diode display according to claim 2, which is characterized in that the electronics passes
Defeated layer covers the bottom of the first pixel definition unit and the part groove, and the connecting hole is close to the second pixel list
First side.
4. the production method of organic light emitting diode display according to claim 2, which is characterized in that
The groove performs etching the second pixel definition unit using laser ablation mode to be formed；The laser incising
The range of angle between laser beam used in erosion and the plane where the auxiliary electrode is greater than 40 ° less than 180 °.
5. the production method of organic light emitting diode display according to claim 1, which is characterized in that the electronics passes
Defeated layer is made to be formed of vapor deposition mode, used evaporation source and the substrate during the electron transfer layer vapor deposition
The range of the angle between plane where substrate is greater than 0 ° less than 40 °.
6. the production method of organic light emitting diode display according to claim 5, which is characterized in that the electronics passes
Evaporation source used in during the vapor deposition of defeated layer is line source.
7. the production method of organic light emitting diode display according to claim 1, which is characterized in that
The cathode is made to be formed of vapor deposition mode, the cathode during vapor deposition used evaporation source with it is described
The range of the angle between plane where underlay substrate is greater than 40 ° less than 180 °.
8. the production method of organic light emitting diode display according to claim 1, which is characterized in that the groove
The shape of longitudinal section is parallelogram.
9. the production method of organic light emitting diode display according to claim 1, which is characterized in that organic function
Ergosphere is made and to be formed by inkjet printing mode or vapor deposition mode.
10. a kind of organic light emitting diode display characterized by comprising
Underlay substrate；
Conductive layer is set on the underlay substrate, and the conductive layer includes anode and auxiliary electrode；
Pixel defining layer is not covered set on the anode, the auxiliary electrode and by the anode and the auxiliary electrode
On underlay substrate；Position corresponding with the anode is provided with pixel openings in the pixel defining layer；The pixel defining layer
Upper position setting corresponding with the auxiliary electrode is fluted；
Organic function layer is set in the pixel openings；
Electron transfer layer, in the organic function layer, the groove close to the anode-side region in and the picture
On plain definition layer；
Cathode is set on the electron transfer layer and in connecting hole, and the cathode passes through the connecting hole and the auxiliary electrode
Connection, wherein the connecting hole is the region for being not filled with electron transfer layer in the groove.
11. organic light emitting diode display according to claim 10, which is characterized in that the cathode and the auxiliary
Contact area between electrode is less than preset area.
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| CN112331800A (en) * | 2020-10-26 | 2021-02-05 | 福建华佳彩有限公司 | Semiconductor device and manufacturing method |
| EP3843170A1 (en) * | 2019-12-27 | 2021-06-30 | LG Display Co., Ltd. | Display panel and display device including same |
| US20210210571A1 (en) * | 2019-08-26 | 2021-07-08 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and manufacturing method thereof |
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