CN110044251B - Strain detection sensor based on graphene film and preparation method thereof - Google Patents
Strain detection sensor based on graphene film and preparation method thereof Download PDFInfo
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- CN110044251B CN110044251B CN201910147207.4A CN201910147207A CN110044251B CN 110044251 B CN110044251 B CN 110044251B CN 201910147207 A CN201910147207 A CN 201910147207A CN 110044251 B CN110044251 B CN 110044251B
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
Abstract
The invention provides a graphene film-based strain detection sensor with a large strain coefficient and high detection sensitivity and a preparation method thereof. The strain detection sensor comprises a graphene film, wherein the graphene film comprises two graphene single-layer films which are mutually overlapped. The graphene on the graphene single-layer film is distributed in an island shape. The preparation method of the strain detection sensor based on the graphene film comprises the following steps: growing a graphene single-layer film on a copper substrate; coating the binder on the surface of the graphene single-layer film to obtain a copper substrate-graphene single-layer film-binder film; corroding the copper substrate in the copper substrate-graphene single-layer film-bonding film to obtain a graphene single-layer film-bonding film; fishing out the graphene single-layer film-bonding film by using the other copper substrate-graphene single-layer film to obtain a copper substrate-double-layer graphene film-bonding film; and finally, completely corroding the copper substrate in the copper substrate-double-layer graphene film-adhesive film to obtain the double-layer graphene film-adhesive film.
Description
Technical Field
The invention relates to the field of micro-strain detection, in particular to a strain detection sensor based on a graphene film and a preparation method thereof.
Background
The following background is provided to aid the reader in understanding the present invention and is not admitted to be prior art.
Graphene-based strain detection devices are currently gaining attention, and can play an important role in the fields of health monitoring, human-computer interaction, electronic skin and the like. However, graphene-based strain detection devices are generally low in sensitivity, which is caused by the rigid stable structure of graphene, and the GF value (strain coefficient) of graphene suspension is about 1.9 under stable axial stress. Therefore, the sensitivity of the graphene-based strain detection device needs to be improved.
In the prior art, different graphene structures are utilized, contact channels of graphene are adjusted, and the resistance of the graphene under different strains is changed, so that the sensitivity of the graphene to micro strain detection is improved. For example, the Pimenta chinensis Franch and the like find that the GF value of graphene can be greatly improved by the structure of the graphene fabric, a graphene film is prepared by a liquid-phase stripping method, then an ultrathin graphene film is obtained by self-assembly, and then the ultrathin graphene film is transferred to a flexible substrate to construct a sensor, wherein the GF of the graphene film is as high as 1037 under the condition of 2% strain. This is mainly because the film structure can sufficiently exert the tunneling effect between graphene sheets when stretched, resulting in a large resistance change. However, the graphene film prepared by the liquid phase peeling method has the problems of low graphene concentration, uncertain atomic layer number, uncontrollable graphene lamination structure, poor experimental repeatability and the like. And the process for preparing the graphene by the liquid-phase stripping method is complex and has long experimental period.
Disclosure of Invention
The invention aims to provide a graphene film-based strain detection sensor with a large strain coefficient and high detection sensitivity and a preparation method thereof.
The utility model provides a strain detection sensor based on graphite alkene film which characterized in that: the graphene film comprises two graphene single-layer films which are mutually overlapped. Graphene is a hexagonal honeycomb lattice two-dimensional carbon nanomaterial consisting of carbon atoms. The graphene monolayer film means that the graphene film only comprises one layer of graphene lattice, and the thickness of the graphene monolayer film is equivalent to the height of one carbon atom.
Further, the graphene on the graphene single-layer film is distributed in an island shape. The island-shaped distribution of the graphene means that the graphene single-layer film comprises a plurality of segments, each segment is equivalent to an "island", the segments are not in contact with each other, and the segments enable the graphene single-layer film to have a discontinuous structure.
Further, the strain detection sensor includes a flexible substrate bonded to the graphene thin film through an adhesive film. The adhesive film is located between the flexible substrate and the graphene thin film and used for bonding the flexible substrate and the graphene thin film. Preferably, the adhesive film is a waffle film.
Further, the preparation method of the strain detection sensor based on the graphene film sequentially comprises the following steps:
step S1: growing a graphene single-layer film on a copper substrate by using a chemical vapor deposition method to obtain a copper substrate-graphene single-layer film;
step S2: coating the binder on the surface of the graphene single-layer film, and airing to obtain a copper substrate-graphene single-layer film-binder film;
step S3: immersing a copper substrate-graphene single-layer film-bonding film into FeCl3In solution until FeCl3Completely corroding the copper substrate with the solution to obtain a graphene single-layer film-bonding film;
step S4: taking another copper substrate-graphene single-layer film prepared in the step S1, and separating the graphene single-layer film-bonding film obtained in the step S3 from FeCl3Fishing out the solution, and airing to obtain a copper substrate-double-layer graphene film-adhesive film;
step S5: putting a copper substrate-double-layer graphene film-bonding film into FeCl3In solution until FeCl3And completely corroding the copper substrate by using the solution, and airing to obtain the double-layer graphene film-bonding film.
Further, step S1 includes the following steps in order:
step S101: putting the copper substrate into a tubular sintering furnace, introducing hydrogen, opening a heating device, and annealing the copper substrate;
preferably, the annealing temperature is 1060 ℃ and the annealing time is 30 min. Further preferably, the annealing treatment comprises two temperature increases, wherein the first temperature increase is to increase the temperature in the tubular sintering furnace to 900 ℃ in 30 min, and the second temperature increase is to increase the temperature in the tubular sintering furnace from 900 ℃ to 1060 ℃ in 10 min. Preferably, the flow rate of hydrogen gas in step S101 is 300 sccm.
Step S102: adjusting the hydrogen flow to 10 sccm, introducing methane with the methane flow of 1.0-1.1 sccm, and growing graphene for 30 s;
step S103: and increasing the hydrogen flow to 300 sccm, closing the heating device, cooling the temperature of the tubular sintering furnace to room temperature, and taking out the sample to obtain the graphene single-layer film growing on the copper substrate. The hydrogen flow rate is increased to suppress the growth of graphene. In a high-temperature environment, methane cracking is a bidirectional process, and when the concentration of hydrogen atoms in the environment is too high, the reverse reaction rate of methane cracking is increased, so that the growth of graphene is inhibited. In step S103, the flow rate of methane is kept constant in step S102.
Further, the preparation method of the strain detection sensor based on the graphene film further comprises the following steps: the flexible substrate is bonded to the adhesive film. So that one side of the adhesive film is combined with the graphene film, and the other side of the adhesive film is combined with the flexible substrate. This step is performed after the adhesive film is formed in step S2, and may be performed between steps S2 to S3, between steps S3 to S4, or between steps S4 to S5. Preferably, the method further comprises the following steps between the steps S4-S5: and pressing the flexible substrate on the adhesive film to combine the flexible substrate with the adhesive film to obtain the copper substrate-double-layer graphene film-adhesive film-flexible substrate. Including the above-described steps before step S5, that is, in the case of having a flexible substrate, the specific operation of step S5 is to put a copper substrate-a double-layered graphene thin film-an adhesive film-a flexible substrate into FeCl3In solution until FeCl3The solution completely corrodes the copper substrate, and the copper substrate is dried to obtain the double-layer graphene film-adhesive film-flexible substrate.
Further, the method of applying the adhesive to the surface of the graphene single-layer film in step S2 is to completely immerse the copper substrate on which the graphene single-layer film is grown in the adhesive and then to lift it out. Preferably, the copper substrate on which the graphene monolayer film is grown is vertically immersed into the binder and then vertically withdrawn. The vertical mode means that the surface of the copper substrate on which the graphene single-layer film grows is kept vertical to the liquid level of the adhesive. The binder used here is in a liquid state, and the binder is contained in a vessel to form a certain liquid level, and then the operation of immersing the copper substrate-graphene monolayer film into the binder and extracting the film from the binder is performed.
Further, the adhesive is a squaraine solution, and the squaraine solution is prepared by trichloromethane and squaraine powder according to the proportion of 100: 1. Thus, a bloom film is formed on the surface of the graphene single-layer film by using the bloom solution.
Further, step S4 includes rolling the copper substrate-graphene single-layer film obtained in step S1 with a roller so that the side of the copper substrate on which the graphene single-layer film is grown protrudes outward to form a radian. Then, the graphene single-layer film-bonding film obtained in the step S3 is separated from FeCl by using the rolled copper substrate-graphene single-layer film3And fishing out the solution, so that the double-layer graphene film in the obtained copper substrate-double-layer graphene film-adhesive film is smoother.
The invention has the beneficial effects that:
1. the double-layer graphene film is obtained by transferring and splicing a graphene single-layer film, the process is controllable, the preparation is simple, convenient and quick, the strain coefficient of the prepared double-layer graphene film is up to more than 2000, and the micro strain can be detected by utilizing the tunnel effect of the double-layer graphene film.
2. The island-shaped graphene single-layer film can be obtained by controlling the growth conditions of the graphene, and the density and size of the island-shaped graphene can be adjusted by controlling the growth conditions of the graphene, so that the preparation of the graphene single-layer film is controllable.
3. The two graphene single-layer films which are mutually overlapped are obtained by a method of using a copper substrate-graphene single-layer film and fishing the obtained graphene single-layer film-bonding film from a FeCl3 solution, and the obtained two graphene single-layer films are flat and have few folds.
Drawings
Fig. 1 is a schematic view of a manufacturing process of a strain detection sensor according to an embodiment of the present invention.
Fig. 2 is a strain-strain coefficient detection graph of a strain detection device prepared by using a double-layer graphene film according to an embodiment of the present invention.
Fig. 3 is an optical microscope image of the graphene monolayer film of example 1.
Fig. 4 is an optical microscope image of the graphene monolayer film of example 2.
Fig. 5 is an optical microscope image of the graphene monolayer film of example 3.
Fig. 6 is an optical microscope image of the graphene monolayer film of example 4.
Fig. 7 is an optical microscope photograph of the graphene monolayer film of example 5.
Fig. 8 is a raman spectrum of the graphene monolayer film of example 2.
Fig. 9 is an optical microscope image of the double-layered graphene thin film of example 2.
Fig. 10 is a raman spectrum of point a in fig. 9.
Fig. 11 is a raman spectrum of point b in fig. 9.
Fig. 12 is a raman spectrum of point c in fig. 9.
Fig. 13 is a schematic diagram of the relative positions of the copper substrate-graphene monolayer and the graphene monolayer-diamond film during step S4 according to an embodiment of the present invention.
Fig. 14 is another schematic illustration of the relative positions of the copper substrate-graphene monolayer film and the graphene monolayer film-diamond film during step S4 in one embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
Example 1
A strain detection sensor based on a graphene film is shown in fig. 1, wherein the graphene film includes two graphene single-layer films 2, and the two graphene single-layer films are overlapped with each other. The graphene on the graphene single-layer film 2 is distributed in an island shape. The graphene monolayer film means that the graphene film only comprises one layer of graphene lattice, and the thickness of the graphene monolayer film is equivalent to the height of one carbon atom. The graphene is distributed in an island shape, that is, only one discontinuous graphene film is arranged on one plane. The graphene single-layer film is not conductive; after the two graphene single-layer films are overlapped, the two graphene single-layer films are partially overlapped to form a graphene double-layer stacking structure, namely the graphene double-layer film. Due to the fact that the graphene double-layer film has a tunnel effect, electrons can jump between the graphene double-layer films, and therefore the graphene double-layer films are conductive. In the stretching process, the flexible substrate is elastically deformed, and due to the high rigidity of the graphene, the overlapped part between the two graphene single-layer films is reduced under the driving of the elastic deformation of the flexible substrate, namely the area of the formed graphene double-layer film is reduced, and the electron transmission is reduced, so that the conductivity of the graphene film is weakened. And detecting the micro strain by using the conductivity change of the graphene film.
The strain detection sensor further comprises a flexible substrate 1, and a diamond film is arranged between the flexible substrate 1 and the graphene film. The diamond film is used for bonding the flexible substrate and the graphene film. Wherein, the flexible substrate is PDMS.
The preparation method of the strain detection sensor based on the graphene film sequentially comprises the following steps:
step S1: and growing the graphene single-layer film on the copper substrate by using a chemical vapor deposition method to obtain the copper substrate-graphene single-layer film.
Step S2: and coating the bloom solution on the surface of the graphene single-layer film, and airing to obtain the copper substrate-graphene single-layer film-bloom film. After air drying, the bloom solution forms a bloom film, one surface of the graphene single-layer film is combined with the copper substrate, and the other surface of the graphene single-layer film is combined with the bloom film. The mechanical properties (such as Young modulus, Poisson ratio and the like) of the membrane are between those of the flexible substrate and the graphene. The waffle film is located between the graphene film and the flexible substrate, so that the mutation of the mechanical property of the interface between the graphene film and the flexible substrate is reduced, the interface strength between the graphene and the flexible substrate can be effectively enhanced, and the elastic deformation generated by the flexible substrate can be more sensitively transmitted to the double-layer graphene film.
The bloom solution is prepared by trichloromethane and bloom powder according to the proportion of 100: 1. In the step S2, the method for coating the bloom solution on the surface of the graphene single-layer film is to vertically immerse the copper substrate on which the graphene single-layer film is grown in the bloom solution and then vertically extract the substrate. Of course, before the copper substrate-graphene single-layer film is immersed in the bloom solution, the bloom solution needs to be contained in a vessel, so that the bloom solution forms a certain liquid level height. The vertical direction means that the surface of the copper substrate on which the graphene single-layer film grows is vertical to the liquid level of the bloom solution. The vertical immersion and the vertical extraction are beneficial to dripping redundant bloom solution from the surface of the graphene single-layer film, so that the bloom solution is uniformly distributed on the graphene single-layer film, and the thickness of the bloom film formed on the graphene single-layer film is uniform. The uniform thickness is beneficial to the combination of the square membrane and the graphene single-layer membrane and the combination of the subsequent square membrane and the flexible substrate.
Step S3: putting a copper substrate, a graphene single-layer film and a diamond film into FeCl3In solution until FeCl3The solution completely corrodes the copper substrate to obtain the graphene single-layer film-diamond film. In step S3, the diamond film is used to maintain the island-like distribution structure of the graphene. Because the graphene on the graphene single-layer film is in discontinuous island-shaped distribution, if the surface of the graphene single-layer film is not coated with the diamond film, the copper substrate is arranged on FeCl3After complete corrosion in the solution, the graphene is dispersed in FeCl3In solution, difficult to collect. The waffle film can be used for bonding a flexible substrate and a graphene film and maintaining the island-shaped distribution structure of graphene on a graphene single-layer film.
Step S4: taking another copper substrate-graphene single-layer film prepared in the step S1, and carrying out FeCl removal on the graphene single-layer film-diamond film obtained in the step S33And fishing out the solution, and airing to obtain the copper substrate-double-layer graphene film-diamond film. The double-layer graphene film refers to a graphene film comprising two graphene single-layer films which are overlapped with each other, and comprises a part where the two graphene single-layer films are overlapped and a part where the two graphene single-layer films are not overlapped. The graphene bilayer film refers to a portion where two graphene monolayer films overlap with each other, as compared to a graphene monolayer film.
In step S3, the copper substrate, the graphene monolayer film and the diamond film float on FeCl3In solution or floating in FeCl3The copper substrate is completely immersed in FeCl on the liquid surface of the solution3In solution. When the copper substrate is completely corroded, the graphene single-layer film-square is obtainedHua Yuan (Chinese character) film. In the step S4, another sheet of the copper substrate-graphene monolayer film prepared in the step S1 is taken and immersed in FeCl3In the solution, when the copper substrate-graphene single-layer film is used for fishing up the graphene single-layer film-diamond film, the two graphene single-layer films can be spliced with each other. In step 4, the relative position relationship between the copper substrate-graphene single-layer film and the graphene single-layer film-diamond film may be, for example, as shown in fig. 13 and 14, in which the copper substrate 3 and the diamond film 4 are respectively bonded to the respective graphene single-layer films.
Step S5: and pressing the flexible substrate on the square membrane to combine the flexible substrate with the square membrane to obtain the copper substrate-double-layer graphene film-square membrane-flexible substrate. That is, the flexible substrate is bonded to the double-layered graphene thin film through the diamond film.
Step S6: placing a copper substrate-a double-layer graphene film-a diamond film-a flexible substrate into FeCl3In solution until FeCl3The solution completely corrodes the copper substrate, and the copper substrate is dried to obtain the double-layer graphene film-diamond film-flexible substrate.
The preparation of the graphene monolayer film, namely the step S1, sequentially includes the following steps:
step S101: and putting the copper substrate into a tubular sintering furnace, introducing hydrogen with the flow of 300 sccm, opening a heating device, and annealing the copper substrate. The copper substrate is annealed to remove impurities and oxides from the surface of the copper substrate. Wherein the annealing temperature is 1060 ℃, and the annealing time is 30 min. In addition, the annealing treatment included two temperature increases, the first temperature increase was 30 min to increase the temperature in the tube sintering furnace to 900 ℃, and the second temperature increase was 10 min to increase the temperature in the tube sintering furnace from 900 ℃ to 1060 ℃.
Step S102: adjusting the hydrogen flow to 10 sccm, introducing methane with the methane flow of 0.95 sccm, and performing graphene growth for 30 s. Methane is cracked into carbon atoms at high temperature, the carbon atoms are adsorbed on a copper substrate and nucleate to grow to form the island-shaped graphene single-layer film. The density of the graphene is controlled by adjusting the flow of methane and controlling the ratio of methane to hydrogen: the higher the methane ratio, the higher the density of the graphene. Controlling the growth time of the graphene, controlling the size of the island-shaped graphene: the longer the growth time of graphene, the larger the size of each island-shaped graphene.
Step S103: and increasing the hydrogen flow to 300 sccm, closing the heating device, cooling the temperature of the tubular sintering furnace to room temperature, and taking out the sample to obtain the graphene single-layer film growing on the copper substrate. The hydrogen flow rate is increased to suppress the growth of graphene. In step S103, the flow rate of methane is kept constant in step S102. In this embodiment, in step S103, the flow rate of methane is maintained to be 0.95 sccm.
In some embodiments, step S4 includes rolling the copper substrate-graphene monolayer film obtained in step S1 with a roller to make the side of the copper substrate on which the graphene monolayer film is grown protrude outward and form a curve. Therefore, the double-layer graphene film in the copper substrate-double-layer graphene film-square membrane obtained in the step S4 is more flat. Step S4 is to form a double-layer graphene film, and to overlap one graphene monolayer film with another graphene monolayer film. In the process, the graphene single-layer film is prone to generating wrinkles, and the overlapping of the two graphene single-layer films is affected, so that the sensitivity of the strain detection sensor is affected. After the copper substrate-graphene single-layer film is rolled by a roller, the graphene single-layer film in the copper substrate-graphene single-layer film is positioned on a convex surface, and FeCl is removed3When the graphene single-layer film-the diamond film is fished out from the solution, wrinkles can be effectively reduced, and the two graphene single-layer films are spliced flatly.
Examples 2 to 5
Examples 2-5 the steps and parameters were the same as in example 1, except that the methane flow rate used in step 102 was different. Table 1 lists the methane flow rates employed in step 102 for examples 1-5.
Table 1 examples 1-5 methane flow rates used in step 102
| Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | |
| Methane flow/sccm | 0.95 | 1.00 | 1.05 | 1.10 | 1.15 |
Fig. 3 to 7 are optical microscope images of the graphene single-layer films prepared in examples 1 to 5, respectively. Compare fig. 3-7: when the flow rate of methane is less than 1.0 sccm, the graphene is distributed in an island shape, but the island-shaped graphene is sparse; when the flow rate of methane is less than 1.0-1.1 sccm, the graphene is distributed in an island shape, and is uniformly distributed and moderate in density; when the methane flow is more than 1.1 sccm, the island-shaped structure of the graphene disappears, and all the graphene is almost connected into one piece. In order to enable the strain detection sensor to have higher sensitivity, on one hand, graphene on the graphene single-layer film needs to be distributed in an island shape, and on the other hand, when the films are overlapped, two graphene single layers need to have larger overlapping parts, so that the formed graphene double-layer stacking structure has a large enough total area. Therefore, when the methane flow is 1.0-1.1 sccm, the prepared strain detection sensor can have high sensitivity.
And transferring the graphene single-layer film prepared in the step S1 to a silicon wafer, and then characterizing the graphene single-layer film by using a Raman spectrum. As can be seen from raman spectroscopy detection, all the graphene single-layer films prepared in examples 1 to 5 are graphene single-layer films, and only raman spectrograms of the graphene single-layer film of example 2 are shown here. Fig. 8 is a raman spectrum of the graphene monolayer film of example 2. As can be seen from the figure, the 2D peak is stronger than the G peak, wherein the 2D peak intensity is 1800a.u., the G peak intensity is 3034 a.u., and the peak intensity ratio of the 2D peak to the G peak is about 1.69, which is greater than 1.5, indicating that this is a graphene monolayer film.
The double-layer graphene film in the copper substrate-double-layer graphene film-waffle film prepared in step S4 in example 2 is transferred to a silicon wafer, and then the graphene single-layer film is characterized by raman spectroscopy. Fig. 9 is an optical microscope photograph of the double-layered graphene film of example 2. Fig. 10 is a raman spectrum of point a in fig. 9. Fig. 11 is a raman spectrum of point b in fig. 9. Fig. 12 is a raman spectrum of point c in fig. 9. In fig. 10, the 2D peak intensity is 5152 a.u., the G peak intensity is 3000 a.u., and the ratio of the 2D peak to the G peak is about 1.72, which is greater than 1.5, indicating a graphene monolayer film at point a. In fig. 11, the 2D peak intensity is 6200 a.u., the G peak intensity is 2312 a.u., and the ratio of the 2D peak to the G peak is about 2.68, which is greater than 1.5, indicating that the graphene monolayer film is at point b. In fig. 12, the 2D peak intensity is 2505 a.u., the G peak intensity is 8700 a.u., and the peak intensity ratio of the G peak to the 2D peak is about 3.47, which is greater than 3, indicating that the graphene bilayer film is a graphene bilayer film at the point c, and the graphene bilayer film is a graphene bilayer stack structure obtained by transfer and is not obtained by growth.
Strain detection is performed on the graphene-based strain detection sensor prepared in example 2, that is, the double-layer graphene film-diamond film-flexible substrate, to obtain a strain-strain coefficient detection curve shown in fig. 2. As can be seen from the graph, the prepared strain detection sensor has a high sensitivity coefficient which can reach more than 2000.
The embodiments described in this specification are merely illustrative of implementations of the inventive concept and the scope of the present invention should not be considered limited to the specific forms set forth in the embodiments but rather by the equivalents thereof as may occur to those skilled in the art upon consideration of the present inventive concept.
Claims (10)
1. The utility model provides a strain detection sensor based on graphite alkene film which characterized in that: the graphene film comprises two graphene single-layer films which are mutually spliced; the graphene single-layer film is a graphene film with only one discontinuous layer on one plane, and the graphene single-layer film is not conductive; after the two graphene single-layer films are overlapped, the two graphene single-layer films are partially overlapped to form a graphene double-layer stacking structure.
2. The graphene thin film based strain detection sensor of claim 1, wherein: the graphene on the graphene single-layer film is distributed in an island shape.
3. The graphene thin film based strain detection sensor of claim 2, wherein: the strain detection sensor comprises a flexible substrate, wherein the flexible substrate is combined with a graphene film through an adhesive film.
4. The graphene thin film based strain detection sensor of claim 3, wherein: the adhesive film is a waffle film.
5. The method for preparing the strain detection sensor based on the graphene film according to any one of claims 1 to 4, comprising the following steps in sequence:
step S1: growing a graphene single-layer film on a copper substrate by using a chemical vapor deposition method to obtain a copper substrate-graphene single-layer film;
step S2: coating the binder on the surface of the graphene single-layer film, and airing to obtain a copper substrate-graphene single-layer film-binder film;
step S3: immersing the copper substrate-graphene single-layer film-bonding film into a FeCl3 solution until the FeCl3 solution completely corrodes the copper substrate to obtain the graphene single-layer film-bonding film;
step S4: another piece of the copper substrate-graphene single-layer film prepared in the step S1 is immersed in FeCl3 solution, the graphene single-layer film-adhesive film obtained in the step S3 is fished out of the FeCl3 solution by the copper substrate-graphene single-layer film, two graphene single-layer films are mutually overlapped, and the copper substrate-double-layer graphene film-adhesive film is obtained after air drying;
step S5: and (3) putting the copper substrate-double-layer graphene film-adhesive film into a FeCl3 solution until the copper substrate is completely corroded by the FeCl3 solution, and airing to obtain the double-layer graphene film-adhesive film.
6. The method for preparing a graphene film based strain detection sensor according to claim 5, wherein the step S1 sequentially comprises the following steps:
step S101: putting the copper substrate into a tubular sintering furnace, introducing hydrogen, opening a heating device, and annealing the copper substrate;
step S102: adjusting the hydrogen flow to 10 sccm, introducing methane with the methane flow of 1.0-1.1 sccm, and growing graphene for 30 s;
step S103: and increasing the hydrogen flow to 300 sccm, closing the heating device, cooling the temperature of the tubular sintering furnace to room temperature, and taking out the sample to obtain the graphene single-layer film growing on the copper substrate.
7. The method for preparing the graphene film based strain detection sensor according to claim 5, further comprising the steps of: the flexible substrate is bonded to the adhesive film.
8. The method for preparing a graphene film based strain detection sensor according to claim 5, wherein: in the step S2, the method for coating the adhesive on the surface of the graphene single-layer film is to completely immerse the copper substrate on which the graphene single-layer film is grown in the adhesive, and then to lift the copper substrate.
9. The method for preparing a graphene film based strain detection sensor according to claim 5, wherein: the adhesive is a squaraine solution which is prepared by trichloromethane and squaraine powder according to the proportion of 100: 1.
10. The method for preparing a graphene film based strain detection sensor according to claim 5, wherein: step S4 includes rolling the copper substrate-graphene single-layer film obtained in step S1 with a roller so that the surface of the copper substrate on which the graphene single-layer film is grown protrudes outward to form a radian.
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