CN110042367A - A kind of method and device of continuous offer precursor source - Google Patents

A kind of method and device of continuous offer precursor source Download PDF

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Publication number
CN110042367A
CN110042367A CN201910427779.8A CN201910427779A CN110042367A CN 110042367 A CN110042367 A CN 110042367A CN 201910427779 A CN201910427779 A CN 201910427779A CN 110042367 A CN110042367 A CN 110042367A
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CN
China
Prior art keywords
source
bottle
precursor
precursor source
reaction chamber
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Pending
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CN201910427779.8A
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Chinese (zh)
Inventor
李哲峰
辛灵玲
陈文翰
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Shenzhen Original Speed Optoelectronic Technology Co Ltd
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Shenzhen Original Speed Optoelectronic Technology Co Ltd
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Priority to CN201910427779.8A priority Critical patent/CN110042367A/en
Publication of CN110042367A publication Critical patent/CN110042367A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a kind of for continuously providing precursor source device, comprising: first source connect with reaction chamber bottle, the first source bottle at least one;The second source bottle connect with the first source bottle, the second source bottle at least one;Precursor source is loaded in the bottle of first source, the precursor source contained in the bottle of the second source is for being supplied to the first source bottle, so that the first source bottle continuously conveys precursor source in reaction chamber.The present invention also provides a kind of for continuously providing the method for precursor source.Apparatus structure provided by the invention is simple, convenient for safeguarding and use;Precursor source can continuously enter reaction chamber, allow continuous production using vapor deposition apparatus such as ALD, CVD of the device, and production capacity is high, meet gas phase plant heavy industrialization quantity-produced requirement.

Description

A kind of method and device of continuous offer precursor source
Technical field
The present invention relates to thin film deposition fields, more particularly to a kind of method and device of continuous offer precursor source.
Background technique
In ALD(atomic layer deposition), CAD(chemical vapor deposition) etc. in gas phase reactions equipment, it will usually being related to will be preceding Body source is driven to be transmitted in reaction chamber to be reacted.Precursor source is generally stored in the bottle of source, and amount of storage is limited.In continuous work In industry production or development activities, need to be replaced as frequently as the loading that source bottle carries out precursor source.Specifically, as the forerunner in the bottle of source When body source is finished or runs out of, outaged equipment is needed by source bottle disassembly and replaces source bottle and carries out the loading of precursor source, it is this Mode is not able to achieve the without interruption of precursor source, and the continuous operation of technique, the volume production performance of extreme influence equipment cannot be achieved.
To certain precursor sources with characteristic that is flammable and meeting air spontaneous combustion, grasped in source bottle disassembly and replacement process Work is slightly improper to have the risks such as kindling, operates than relatively hazardous.And the precursor source relatively low to vapour pressure, due to generally requiring The saturated vapor pressure that precursor source is improved by the way of heating needs to wait one after outaged equipment in the source of replacement when bottle The section time is until the temperature decline of source bottle can just operate source bottle;After source bottle updates, heating need to be carried out to precursor source makes its temperature Degree reaches preset temperature just and can star equipment progress depositing operation, for example is heated by heating mantle, and precursor source needs Long period gets to preset temperature, i.e. the loading of precursor source has strict demand to temperature.
Therefore, it is desirable to provide a kind of device and method solve the above problems, and guarantee to stablize lasting provide into reaction chamber Precursor source, to promote the production capacity of ALD equipment.
Summary of the invention
The purpose of the present invention is to provide a kind of method and devices of continuous offer precursor source, can be steady into reaction chamber Precursor source is persistently provided calmly, and the production capacity of effective lifting means can satisfy the vapor deposition apparatus heavy industrialization such as ALD company The requirement of continuous production.
To achieve the above object, the present invention provides a kind of for continuously providing the device of precursor source, comprising:
One connect with reaction chamber the first source bottle, the first source bottle at least one;
The second source bottle connect with the first source bottle, the second source bottle at least one;
Precursor source is loaded in the bottle of first source, the precursor source contained in the bottle of the second source is used to be supplied to the first source bottle, so that First source bottle continuously conveys precursor source in reaction chamber.
Preferably, for continuously providing the device of precursor source further include: the precursor source for gasifying for precursor source Gasification chamber, precursor source gasification chamber are separately connected the first source bottle and reaction chamber.
Preferably, the first source bottle includes: precursor source storage chamber and precursor source gasification chamber, the connection of precursor source gasification chamber Reaction chamber.
Preferably, the first source bottle is equipped at least one monitoring machine for being used to monitor precursor source surplus in the bottle of the first source Structure.
Preferably, the second source bottle is installed on a movable mechanism.
Preferably, the second source bottle at least two, bottle is connect at least one in the bottle of at least two second source with the first source.
Preferably, for continuously providing the device of precursor source further include: connect respectively with the first source bottle and the second source bottle Interconnecting piece, interconnecting piece be equipped with scavenging pipeline blowing mechanism.
Preferably, for continuously providing the device of precursor source further include: respectively to the first source bottle, the second source bottle and connection The first heated protective mechanism, the second heated protective mechanism and the third heated protective mechanism of portion's offer heat.
Preferably, it is applied to CVD equipment, ALD equipment or other vapor depositions for continuously providing the device of precursor source Equipment.
The present invention also provides a kind of for continuously providing the method for precursor source, comprising: is loaded with the first of precursor source Source bottle provides precursor source to reaction chamber;The the second source bottle for being loaded with precursor source provides precursor source to the first source bottle, So that the first source bottle continuously conveys precursor source toward reaction chamber.
Compared with prior art, the method and device of a kind of continuous offer precursor source provided by the invention, device knot Structure is simple, convenient for safeguarding and use;The blowing mechanism module in above-mentioned interconnecting piece that the dress centers, can be effectively avoided The generation of transfer conduit clogging;And being set using for above three heated protective mechanism, it can better ensure that presoma Source is stable and reaction chamber of continuously entering is reacted, and the vapor deposition apparatus such as ALD, CVD can be with continuous production, production capacity Height meets gas phase plant heavy industrialization quantity-produced requirement.
Detailed description of the invention
Fig. 1 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 2 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 3 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 4 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 5 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 6 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 7 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 8 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Fig. 9 provides a kind of for continuously providing the schematic diagram of the device of precursor source for one embodiment of the invention.
Wherein, 1, reaction chamber, the 2, first source bottle, 21, precursor source memory block, 22, precursor source gasification zone, the 3, second source Bottle, 4, precursor source gasification mechanism, 5, interconnecting piece, 6, blowing mechanism, 7, mobile mechanism, 8, mechanism for monitoring.
Specific embodiment
Below in conjunction with attached drawing of the embodiment of the present invention, technical solution in the embodiment of the present invention is carried out clearly and completely Description, it is clear that the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.Based on this hair Bright embodiment, those skilled in the art's other embodiments obtained without making creative work, all Belong to the scope of protection of the invention.
The present invention discloses a kind of for continuously providing the device of precursor source, comprising:
One connect with reaction chamber the first source bottle, the first source bottle at least one;
The second source bottle connect with the first source bottle, the second source bottle at least one;
Precursor source is loaded in the bottle of first source, the precursor source contained in the bottle of the second source is used to be supplied to the first source bottle, so that First source bottle continuously conveys precursor source in reaction chamber.
Wherein, need deposited samples in reaction chamber, precursor source may decompose after entering reaction chamber or with deposition Some or certain some other substances on sample chemically react;Precursor source can be solid, liquid or gas.
First source bottle is equipped with gas outlet, and reaction chamber is equipped with air inlet corresponding with above-mentioned gas outlet, is placed in first Precursor source in the bottle of source flows through the pipeline between gas outlet and air inlet and enters reaction chamber.That is, the first source bottle is directly to anti- Chamber is answered to provide the source bottle of precursor source.
Identical precursor source, such as the first source are contained in the second source bottle and the first source bottle being correspondingly connected with the first source bottle The precursor source that bottle A is contained is precursor source A, then the precursor source in the second source bottle A of connection corresponding with first source bottle A It also is precursor source A, this is primarily to avoided the cross contamination between precursor source.But in some special cases, according to Technologic requirement, the first source bottle A and the second source bottle A can contain different precursor sources.
In addition, the first source bottle A and the second source bottle A are formed by structure and setting can be repeated several times, so as in the reactor chamber Deposit a variety of films, for example, the first source bottle A and the second source bottle A are formed by structure and are repeated twice, that is, exist the first source bottle A with Second source bottle A, the first source bottle B and the second source bottle two mould groups of B, it is assumed that precursor source used in the two mould groups is respectively not Same precursor source A and precursor source B.The reaction process occurred in the reactor chamber includes: to connect precursor source A and reaction chamber, Reaction forms the A film of preset thickness;Precursor source A is cut off, precursor source B and reaction chamber are also turned on, reaction forms default The B film of thickness.If necessary to deposit three kinds of material films, then above-mentioned mould group three is arranged;And so on.
In equipment use process, to keep the air-suction state of precursor source always in a more stable balance, it is false If the amount of the precursor source in the bottle of the first source must maintain pre- set always under the premise of all no change of remaining all conditions It is more than exhausted line.For example, verified, amount of storage of the precursor source A in the bottle A of the first source cannot be below 1 liter or storing highly not Lower than 20 millimeters (relative to plane where the bottle minimum point of the first source), lower exhausted line at this time is 1 liter, 20 millimeters, in precursor source A When reaching exhausted line under this, the precursor source A of connection second source bottle A corresponding with the first source bottle A, the second source bottle A splendid attire enter First source bottle A, the precursor source A of the first source of supplement bottle A.In other words, the second source bottle A be the first source bottle A Back Up Source bottle, second Source bottle A and the first source bottle A are used in conjunction with each other the precursor source A for guaranteeing sufficient amount, and precursor source A successively enters reaction chamber It is interior, realize continuous production.
First source bottle can connect multiple second sources bottle, for example, the first source bottle A can be correspondingly connected with the second source bottle A1, A2, A3 etc..This embodiment can flexibly replace the second source bottle, the disadvantage is that the space occupied volume is big.
On the position staggered relatively of the first source bottle and the second source bottle, the two can place up and down in the longitudinal direction, can also be with Horizontally it is horizontally arranged.Preferably, the second source bottle relative to the first source bottle above, with the gravity using precursor source come reality The precursor source of existing second source bottle swimmingly flows to the first source bottle.
Further, for continuously providing the device of precursor source further include: for the gasification mechanism in vaporized precursor source, Gasification mechanism is separately connected the first source bottle and reaction chamber.
Precursor source for vapor deposition generally exists under atmospheric environment with liquid phase or solid phase, but is being reacted with gas phase It reacts in chamber.Precursor source can be in the transient evaporation for entering reaction chamber, but preferably, and precursor source is entering reaction chamber Gas phase is formed before, therefore, in precursor source from source bottle is left to setting gasification mechanism entrance reaction chamber.
It is worth noting that, gasification mechanism described herein can also have the function of catalytic gasification.Not to operation source temperature The precursor source of high (for example being not higher than 300 degrees Celsius), gasification mode may be only to heat to it;But to a few thing source The excessively high precursor source of temperature, may also need by the way of catalytic gasification except heating.
Further, the first source bottle includes: precursor source memory block and precursor source gasification zone, and precursor source gasification zone connects Connect reaction chamber.
The space that precursor source occupies is precursor source memory block, and the definition space not occupied by precursor source is forerunner Body source gasification zone;If the first source bottle is divided into two spaces by above-mentioned define, the first source bottle relative level is placed, then first The upper area of source bottle is precursor source gasification zone, and lower area is precursor source memory block;If the first source bottle is opposite water Plane or so segmentation, then the left side is precursor source memory block, the right is precursor source gasification zone, on the contrary.Gasification direction one As relatively upward, it is preferable that the first source bottle by up-down structure separate.
In fact, precursor source memory block and precursor source gasification zone do not have apparent boundary, to the presoma of liquid phase The line of demarcation of both source, precursor source memory block and precursor source gasification zone is the metal line of precursor source.
Further, the first source bottle is equipped at least one monitoring for being used to monitor precursor source surplus in the bottle of the first source Mechanism.
Mechanism for monitoring can be monitored to the first source bottle or even real-time monitoring, to feed precursor source in time.Prison Surveying mechanism can be liquidometer;In the case where considering cost, mechanism for monitoring can be observed for what is be arranged on the bottle of the first source The observation window etc. of the amount of precursor source in the bottle of first source.Since the data of precursor source surplus do not need very precisely this implementation Preferred mechanism for monitoring is the observation window being arranged on the bottle of the first source in example.
Observation window at least one.When only with an observation window, which, which is preferably provided at, can facilitate observation The position of exhausted line under to precursor source;When observation window is two, preferably respectively setting can conveniently observe presoma On source under exhausted line (precursor source is in the maximum containing quantity in the bottle of the first source) and precursor source exhausted line position.If selection three Above observation window, then at least there are two can monitor exhausted line and presoma in precursor source in observation window more than these three Exhausted line under source.
Further, the second source bottle is installed on a movable mechanism.
When the precursor source of the second source bottle feeds non-first source bottle completely, need to supplement presoma into the second source bottle Source, in case of the supply of precursor source in the bottle of the first source next time.To the second source bottle filling precursor source, second can not moved In the case where the bottle of source, precursor source supplier directly arrives working site and fills, this is in actual production than relatively difficult to achieve.
In actual use, the second source bottle is removable relative to the first source bottle.That is, when the second source bottle is empty When, the second source bottle is taken out, other second sources bottle filled with precursor source is changed.It is heavier since source bottle volume is big, instead Mobile not only inconvenient benefit again, it is also possible to other adjacent components in device can be damage.In the present embodiment, it is arranged one Movable mechanism, the movable mechanism can be used as the plummer of the second source bottle simultaneously, be also possible to independently of the second source bottle (i.e. Movable mechanism is just used when needing replacing the second source bottle).
Further, for continuously providing the device of precursor source further include: respectively with the first source bottle and the second source bottle company The interconnecting piece connect, interconnecting piece are equipped with the blowing mechanism of scavenging pipeline.
After the second source bottle transfers precursor source to the first source bottle, closes valve and close interconnecting piece.In interconnecting piece not Remain precursor source avoidablely.Remaining precursor source is adsorbed and is condensate on the pipeline in interconnecting piece, if not thorough Bottom is removed, and long-term accumulation will cause pipeline blockage.In the present embodiment, using blowing mechanism to being transported to precursor source every time Interconnecting piece is purged, and is efficiently solved because residual precursor source condenses the blockage problem to be formed.
Further, for continuously providing the device of precursor source further include: respectively to the first source bottle, the second source bottle and company The first heated protective mechanism, the second heated protective mechanism and the third heated protective mechanism of socket part offer heat.
In use, precursor source need to reach temperature T1 in the bottle of the first source, and interconnecting piece needs to reach temperature T2, and second Precursor source need to reach temperature T3 in the bottle of source;T1 >=T2 >=T3, T1 should make precursor source have good volatility.T1≥T2≥ T3 has both sides effect: first is that shortening temperature difference of the precursor source after from the second source bottle to the first source bottle;Second is that avoiding forerunner There is condensation in entire transmission process in body source.
Preferably, the second source bottle at least two, bottle is connect at least one in the bottle of at least two second source with the first source.
Second source bottle at least two may further ensure that the supply of precursor source in the bottle of the first source;At least one second Precursor source is loaded in the bottle of source;It can be partially connected in series between the bottle of at least two second sources, partially with parallel connection Mode connects, alternatively, at least two second sources bottle is directly connected to the first source bottle.Specifically, in one embodiment, the second source Bottle has 5, respectively s1, s2, s3, s4 and s5, and wherein s1, s2 connect to form s12, and s3, s4 and s5 connect to form s345, and S12 and s345 is in parallel, and any of s1, s2 are connect with the first source bottle, and any of s3, s4 and s5 are connect with the first source bottle.? In another embodiment, s1, s2 are connect with the first source bottle.
Preferably, it is applied to CVD equipment, ALD equipment or other vapor depositions for continuously providing the device of precursor source Equipment.
Invention additionally discloses a kind of for continuously providing the method for precursor source, comprising: is loaded with the first of precursor source Source bottle provides precursor source to reaction chamber;The the second source bottle for being loaded with precursor source provides precursor source to the first source bottle, so that First source bottle continuously conveys precursor source toward reaction chamber.
Preferably, it is acted on to guarantee in the bottle of the first source that the precursor source that stores is enough to provide reaction chamber, the Exhausted line under one is preset on the bottle of one source, the amount of precursor source needs to guarantee to be not less than above-mentioned lower exhausted line.
It is highly preferred that the amount of precursor source excessively causes the first source bottle cannot be to reaction chamber in the bottle of the first source in order to prevent Precursor source is provided, relative to lower exhausted line, a upper exhausted line is preset on the bottle of the first source.During reacting progress, presoma The amount in source preferably between preset lower exhausted line and upper exhausted line (including lower exhausted line and upper exhausted line).When precursor source in the bottle of the first source When being reduced to lower exhausted line, the precursor source in the second source bottle connecting with the first source bottle is supplied to the first source bottle until the first source Precursor source in bottle is no more than upper exhausted line, so that the first source bottle continuously conveys precursor source toward reaction chamber.
In view of actually using demand, by the first source bottle relative to the plane definition where the extreme lower position of its placement location For Lest, the place plane definition that lower exhausted line is located on the bottle of the first source is Dest, DestWith LestBetween difference be not less than 20 millimeters.
Below by way of specific embodiment, the present invention is further illustrated.
Embodiment one
As shown in Figure 1, the device for continuously providing precursor source of the present embodiment includes: reaction chamber 1, the first source bottle 2 and the Two sources bottle 3, the first source bottle 2 pass through second the first source of piping connection bottle 2 by the first piping connection reaction chamber 1, the second source bottle 3; First pipeline is equipped with the valve for controlling the precursor source for entering reaction chamber 1 in the first source bottle 2, and the first pipeline, which is equipped with, to be used Enter the valve of the precursor source of the first source bottle 2 in second source that controls bottle 3,
When in use, the precursor source in the first source bottle 2 enters to be placed in the reaction chamber 1 of sample to be deposited to be carried out above equipment Reaction;Second source, 3 pair of first source of bottle bottle 2 supplements precursor source to guarantee to have precursor source to be conveyed into reaction chamber incessantly, For the successive sedimentation formation film on sample to be deposited.
Embodiment two
As shown in Fig. 2, the device for continuously providing precursor source of the present embodiment further comprises forerunner in embodiment one Body source gas mechanism 4, precursor source volatility corresponding to the material suitable for deposition is poor, only by heating is difficult to meet the requirements Scene.Furthermore it is also possible to which setting carrier gas passage (not shown) is used to take out of precursor source in precursor source gasification mechanism And enter in reaction chamber 1.
Embodiment three
As shown in figure 3, the device for continuously providing precursor source of the present embodiment optimizes in embodiment one.First source Bottle 2 is set as including 22 two parts of precursor source memory block 21 and precursor source gasification zone.Before in precursor source memory block 21 It drives body source and forms precursor source gas through gasification, precursor source gasification zone 22 is the space for storing precursor source gas.Presoma Source, which enters in gaseous form in reaction chamber 1, is reacted.
Example IV
As shown in figure 4, the device for continuously providing precursor source of the present embodiment further wraps on the basis of example 1 Interconnecting piece 5 and blowing mechanism 6 are included, carrying out purging to pipeline prevents precursor source from condensing simultaneously blocking pipeline in pipeline.
Embodiment five
The device for continuously providing precursor source as shown in Figure 5 include three kinds of different precursor sources (precursor source A, B and C), at least three kinds films for not having to material can be deposited, can be used for deposition laminated material.
Fig. 6 show another implementation of depositing multiple materials film.
Embodiment 6
Device shown in Fig. 7 and Fig. 8 for continuously providing precursor source includes the moving machine for carrying and moving the second source bottle 3 Structure 7, to facilitate the replacement of the second source bottle 3.
The second source bottle 3 is vertically arranged relative to the first source bottle 2 in Fig. 7, and the second source bottle 3 is relative to the first source 2 water of bottle in Fig. 8 Flat setting.
Embodiment 7
Device shown in Fig. 9 for continuously providing precursor source includes mechanism for monitoring 8, and mechanism for monitoring 8 is set as in the present embodiment Observation window 82 for monitoring the observation window 81 of exhausted line in precursor source and for monitoring exhausted line under precursor source.In precursor source Stop adding precursor source into the first source bottle 2 when rising to observation window 81;Precursor source is needed when dropping to observation window 82 toward the Precursor source is added in one source bottle 2.
In the present embodiment, lower exhausted line is in the first source of distance place bottle extreme lower position 20mm in plane.
Compared with prior art, the method and device of a kind of continuous offer precursor source provided by the invention, device knot Structure is simple, convenient for safeguarding and use;The blowing mechanism module in above-mentioned interconnecting piece that the dress centers, can be effectively avoided The generation of transfer conduit clogging;And being set using for above three heated protective mechanism, it can better ensure that presoma Source is stable and reaction chamber of continuously entering is reacted, and the vapor deposition apparatus such as ALD, CVD can be with continuous production, production capacity Height meets gas phase plant heavy industrialization quantity-produced requirement.
Above content is only citing made for the present invention and explanation, affiliated those skilled in the art are to being retouched The specific embodiment stated is done various modifications or additions or is substituted using similar method, without departing from invention or is surpassed More range defined in present claims, is within the scope of protection of the invention.

Claims (10)

1. a kind of for continuously providing the device of precursor source characterized by comprising
One the first source bottle being connect with reaction chamber, first source bottle at least one;
The second source bottle connect with first source bottle, second source bottle at least one;
It is loaded with precursor source in the bottle of first source, the precursor source contained in the second source bottle is for being supplied to described the One source bottle, so that first source bottle continuously conveys precursor source in the reaction chamber.
2. the apparatus according to claim 1, which is characterized in that further include: the precursor source for gasifying for precursor source Gasification chamber, the precursor source gasification chamber are separately connected the first source bottle and the reaction chamber.
3. the apparatus according to claim 1, which is characterized in that the first source bottle includes: precursor source storage chamber with before Body source gasification chamber is driven, the precursor source gasification chamber connects the reaction chamber.
4. the apparatus according to claim 1, which is characterized in that the first source bottle is equipped at least one for monitoring institute State the mechanism for monitoring of precursor source surplus in the bottle of the first source.
5. the apparatus according to claim 1, which is characterized in that the second source bottle is installed on a movable mechanism.
6. the apparatus according to claim 1, which is characterized in that the second source bottle at least two, this at least two second At least one in the bottle of source is connect with the first source bottle.
7. the apparatus according to claim 1, which is characterized in that further include: respectively with first source bottle and described second The interconnecting piece of source bottle connection, the interconnecting piece are equipped with the blowing mechanism of scavenging pipeline.
8. device according to claim 7, which is characterized in that further include: respectively to first source bottle, the second source bottle and The first heated protective mechanism, the second heated protective mechanism and the third heated protective mechanism of interconnecting piece offer heat.
9. device according to any one of claims 1 to 8, which is characterized in that the device is applied to CVD equipment, ALD equipment Or other vapor deposition apparatus.
10. a kind of for continuously providing the method for precursor source, which is characterized in that be loaded with the first source bottle of precursor source to anti- Chamber is answered to provide precursor source;The the second source bottle for being loaded with precursor source provides precursor source to the first source bottle, so that described First source bottle continuously conveys precursor source toward the reaction chamber.
CN201910427779.8A 2019-05-22 2019-05-22 A kind of method and device of continuous offer precursor source Pending CN110042367A (en)

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CN201910427779.8A CN110042367A (en) 2019-05-22 2019-05-22 A kind of method and device of continuous offer precursor source

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Application Number Priority Date Filing Date Title
CN201910427779.8A CN110042367A (en) 2019-05-22 2019-05-22 A kind of method and device of continuous offer precursor source

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Publication Number Publication Date
CN110042367A true CN110042367A (en) 2019-07-23

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