CN110010719A - Doping method - Google Patents
Doping method Download PDFInfo
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- CN110010719A CN110010719A CN201810011757.9A CN201810011757A CN110010719A CN 110010719 A CN110010719 A CN 110010719A CN 201810011757 A CN201810011757 A CN 201810011757A CN 110010719 A CN110010719 A CN 110010719A
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- conduction type
- exposure mask
- doping
- open area
- slit
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 229920005591 polysilicon Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 19
- 239000007924 injection Substances 0.000 claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000002513 implantation Methods 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of doping methods, comprising: one second conduction type pre-doping layer is formed in one first conductivity type substrate；One first exposure mask is set on the second conduction type pre-doping layer；First conductive type ion injection is carried out to first open area to neutralize the second conduction type doping of first open area；One second exposure mask is set on the second conduction type pre-doping layer；First conductive type ion injection is carried out to form the first conduction type doped region to second open area, remove second exposure mask, wherein the second conduction type pre-doping layer without injection is the second conduction type doped region, and the first conduction type doped region and the second conduction type doped region are kept apart by differential gap.When the back side to IBC battery is doped, amorphous silicon or polysilicon are introduced, is injected by the transoid in amorphous silicon or polysilicon, come the isolation formed between the area P and the area N.
Description
Technical field
The present invention relates to a kind of doping methods, more particularly to a kind of doping method of back contact battery.
Background technique
IBC (interdigitated back contact) solar battery is the back junction battery studied earliest, initially main
Be used in condenser system, SUNPOWER company production IBC solar battery highest transfer efficiency up to 24%, then by
In which employs photoetching process, the complex operations as brought by photoetching make its cost be difficult to decline, to civilian or common
The commercial applications of occasion cause difficulty.In order to reduce cost, also there are using mask plate the area P and the area N for forming cross arrangement,
But multiple mask plates must be used in the production process, cost of manufacture is not only increased, since photoetching technique needs accurate school
Quasi- therefore also create needs the problem of calibrating using different mask plates, brings many difficulty for manufacturing process.Furthermore if
Using photoresist as exposure mask, then the step of formation exposure mask and exposure mask of removal is also more various.In addition, in existing producing line
In, the area P and the area N are formed by thermal diffusion twice.In order to keep apart the area P and the area N, it usually needs mask etching step increases
The complexity of technique also reduces the yield of battery production simultaneously.Polysilicon passivated electrodes technology newly developed is avoided due to it
Few son at metal-semiconductor contact is compound, and greatly improve crystal silicon battery open pressure.This new technology is also used for
In IBC battery structure, but the region of the polysilicon contact of the polysilicon and N doping of same P doping will cause carrier
It is serious compound, and then reduce battery efficiency.For isolated p polysilicon and N-type polycrystalline silicon, etch step is also needed, so that
IBC battery production technology becomes complicated.
Summary of the invention
Using heat when the technical problem to be solved by the present invention is in order to overcome the prior art to form the doping of IBC cell backside
Diffusion technique needs to use traditional exposure mask, complex process, the area P and the area N and is difficult to the defect being isolated, and providing one kind may insure the area P
The completely isolated doping method with the area N.
The present invention is to solve above-mentioned technical problem by following technical proposals:
A kind of doping method, it is characterized in that, comprising the following steps:
S1: one second conduction type pre-doping layer is formed in one first conductivity type substrate；
S2: one first exposure mask is set on the second conduction type pre-doping layer, on the second conduction type pre-doping layer
The region that do not blocked by first exposure mask is the first open area；
S3: to first open area carry out the first conductive type ion injection with neutralize first open area second
Conduction type doping so that first open area is in neutrality state, make later first conductivity type substrate leave this first
The zone of action of exposure mask；
S4: one second exposure mask is set on the second conduction type pre-doping layer, on the second conduction type pre-doping layer
The region that do not blocked by second exposure mask is the second open area, wherein second open area and the first open area weight
Folded, which is less than first open area；
S5: the first conductive type ion injection is carried out to second open area so that second open area forms the
One conduction type doped region makes first conductivity type substrate leave the zone of action of second exposure mask later, wherein without note
The the second conduction type pre-doping layer entered is the second conduction type doped region, and only first conductive type ion of experience injects
First open area is differential gap, and the first conduction type doped region and the second conduction type doped region are kept apart by differential gap,
Wherein can be mobile substrate stops it no longer by exposure mask, and being also possible to removal exposure mask blocks substrate no longer by exposure mask.
Preferably, which is doped with the amorphous silicon of the second conduction type doped chemical or more
Crystal silicon.
Preferably, which is formed by following steps: in first conductivity type substrate
Amorphous silicon or polysilicon are grown, and adulterates the second conduction type doped chemical in situ.
Preferably, which is formed by following steps: in first conductivity type substrate
Amorphous silicon or polysilicon are grown, is formed in the amorphous silicon or polysilicon by the ion implanting of the second conduction type doped chemical
The doping of second conduction type, alternatively,
Amorphous silicon or polysilicon are grown in first conductivity type substrate, and the second conduction type is formed by thermal diffusion and is mixed
It is miscellaneous.
Preferably, the width of the differential gap is 0.1 μm -500 μm, which adulterates 10 μm of -3000 μ of sector width
M, second conduction type adulterate 10 μm -3000 μm of sector width.
Preferably, the thickness 5nm-500nm of the second conduction type pre-doping layer.
Preferably, the second conduction type pre-doping layer is the amorphous silicon and polysilicon of boron injection, implantation dosage 5e14-
5e15/cm2, Implantation Energy 0.1keV-10keV,
Alternatively, differential gap phosphorus implantation dosage (being infused in the implantation dosage of phosphorus in the second conduction type pre-doping layer for the first time)
For 5e14-5e15/cm2, Implantation Energy 0.1keV-10keV,
Alternatively, the first conduction type doped region is the amorphous silicon and polysilicon of phosphorus injection, implantation dosage (the second secondary ion note
The dosage entered) it is 1e15-1e16/cm2, Implantation Energy 0.1keV-10keV.
Preferably, first exposure mask be graphite with several first slits, ceramics, silica, aluminium oxide, silicon carbide or
Silicon wafer,
Second exposure mask be graphite, ceramics, silica, aluminium oxide, silicon carbide or silicon wafer with several second slits,
First slit and second slit correspond, and slit direction is consistent.
Preferably, the width of first slit is 50 μm -1000 μm, and the spacing between adjacent first slit is 1mm-5mm,
Alternatively, the width of second slit is 50 μm -1000 μm, the spacing between adjacent second slit is 1mm-5mm.
Preferably, the distance of first mask to first conductivity type substrate is 1mm-20mm,
Alternatively, the distance of second mask to first conductivity type substrate is 1mm-20mm.
Preferably, first exposure mask and second exposure mask are located in same ion implantation device, first exposure mask with this
Alignment error between two exposure masks is 1 μm -50 μm, which is center line and corresponding second slit of the first slit
The vertical range of center line.
Preferably, first exposure mask and second exposure mask are the different zones of same mask plate, wherein in the first slit
Heart line is less than or equal to 50 μm with the vertical range of the center line of corresponding second slit.
After forming the first conduction type doped region, the second conduction type doped region and the differential gap, to the structure
It is made annealing treatment, annealing temperature is 600 DEG C -1000 DEG C, and the time is -90 minutes 1 minute.
On the basis of common knowledge of the art, above-mentioned each optimum condition, can any combination to get each preferable reality of the present invention
Example.
The reagents and materials used in the present invention are commercially available.
The positive effect of the present invention is that:
When the back side to IBC battery is doped, amorphous silicon or polysilicon are introduced, by by the suitable exposure mask of size
It is placed between line and substrate, carrys out the subregional ion implanting of blocking portion.Also, pass through the transoid in amorphous silicon or polysilicon
Injection, come the isolation formed between the area P and the area N.Present invention process is simple and easy, the area P and N separate from technique also greatly simplify
The production procedure of IBC battery, reduces cost and improves yield.
Detailed description of the invention
Fig. 1 is the schematic diagram that the embodiment of the present invention 1 forms the second conduction type pre-doping layer.
Fig. 2 is the schematic diagram that the embodiment of the present invention 1 forms the first exposure mask.
Fig. 3 is the schematic diagram of 1 first time of embodiment of the present invention ion implanting.
Fig. 4 is to remove the schematic diagrames of the first exposure mask resulting structures after the embodiment of the present invention 1 completes first time ion implanting.
Fig. 5 is the schematic diagram that the embodiment of the present invention 1 forms the second exposure mask.
Fig. 6 is the schematic diagram of second of the ion implanting of the embodiment of the present invention 1.
Fig. 7 is to remove showing for the resulting doped structure of the second exposure mask after the embodiment of the present invention 1 completes second of ion implanting
It is intended to.
Fig. 8 is the first exposure mask of the embodiment of the present invention 3 and the setting schematic diagram of the second exposure mask.
Fig. 9 is the first exposure mask of the embodiment of the present invention 4 and the setting schematic diagram of the second exposure mask.
Specific embodiment
The present invention is further illustrated below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.In the following examples, the experimental methods for specific conditions are not specified, according to conventional methods and conditions, or according to quotient
The selection of product specification.
Embodiment 1
The doping method, comprising the following steps:
With reference to Fig. 1, one second conduction type pre-doping layer 101 is formed in one first conductivity type substrate 100, this second
Conduction type pre-doping layer is formed by following steps: growth thickness is the polycrystalline of 300nm in first conductivity type substrate
Silicon, and the second conduction type doped chemical is adulterated in situ.
With reference to Fig. 2, one first exposure mask 2 is set on the second conduction type pre-doping layer 101, second conduction type is pre-
The region not covered by first exposure mask on doped layer is the first open area A1 (200 μm of width).
With reference to Fig. 3 and Fig. 4, the first conductive type ion injection is carried out to the first open area A1 to neutralize this and first open
Put the second conduction type doping in region, implantation dosage 1e15/cm2, Implantation Energy 5keV, so that during first open area is in
Character state, polysilicon corresponding with the first open area is with 102 labels, and the part blocked by the first exposure mask 2 is still with 101 marks
Note, removes first exposure mask 2 or silicon wafer removes the region that the first exposure mask 2 blocks, and obtains structure as shown in Figure 4.
With reference to Fig. 5, one second exposure mask 3 is set on the second conduction type pre-doping layer 101, second conduction type is pre-
The region not covered by second exposure mask on doped layer is the second open area A2 (150 μm of width), wherein second open zone
Domain is Chong Die with first open area, which is less than first open area.
With reference to Fig. 6 and Fig. 7, the first conductive type ion injection is carried out to second open area so that second opening
Region forms the first conduction type doped region 103, implantation dosage 5e15/cm2, Implantation Energy 5keV, remove second exposure mask 3 or
Person's silicon wafer removes the region that the second exposure mask blocks, wherein the second conduction type pre-doping layer without injection is the second conduction type
Doped region indicates that the first conduction type doped region and the second conduction type doped region are kept apart by differential gap still with 101,
Differential gap only lives through the polysilicon once injected, still indicates with 102.
Wherein, the second conduction type doped chemical is boron, and the first conduction type doped chemical is phosphorus, the first exposure mask and second
Exposure mask is by graphite processing procedure, and when ion implanting, the distance of the first exposure mask and second the first conductivity type substrate of exposure mask distance is
10mm。
Embodiment 2
The basic principle and embodiment 1 of embodiment 2 are consistent, the difference is that: the second conduction type pre-doping layer is
The second conduction type doped chemical is injected in amorphous silicon.After in completion, injection obtains structure as shown in Figure 7 twice, carry out
Annealing, 800 DEG C of annealing temperature, the time 30 minutes, amorphous silicon was at polysilicon.
Remaining does not refer to place referring to embodiment 1.
Embodiment 3
With reference to Fig. 8, the basic principle and embodiment 1 of embodiment 3 are consistent, specifically the first exposure mask 2 and the second exposure mask 3
In same ion implantation device, it is provided with several first slits 21 on the first exposure mask 2, several are provided on the second exposure mask 3
Two slits 31 (showing in figure for sake of simplicity, only 3 slits), every first slit 21 and every second slit 31 correspond,
Alignment error between first exposure mask and the second exposure mask is 10 μm.That is, the center line 211 of the first slit 21 and the second slit 31
The vertical range (distance on the direction arrow Ar) of center line 311 is 10 μm.
Embodiment 4
With reference to Fig. 9, the basic principle and embodiment 3 of embodiment 4 are consistent, the difference is that the first exposure mask and the second exposure mask
For the different zones of same mask plate, i.e., it is same mask plate that barrier effect is played in the present embodiment, but the mask plate
On different zones be provided with the first slit and the second slit, (outlined respectively as the first exposure mask and the second exposure mask with dotted line, still
It is so indicated with appended drawing reference 2 and 3).Such set-up mode, so that the calibration difficulty of the first exposure mask 2 and the second exposure mask 3 reduces,
As long as guaranteeing machining accuracy during processing slit, it will be able to remove the calibration steps of two exposure masks from.As long as making in this way
Substrate once moves through mask plate, so that it may complete the first conduction type doped region, the second conduction type doped region and neutrality
The production in area, and the problem of also calibrated there is no the first exposure mask and the second mask location.
Although specific embodiments of the present invention have been described above, it will be appreciated by those of skill in the art that these
It is merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is not carrying on the back
Under the premise of from the principle and substance of the present invention, many changes and modifications may be made, but these are changed
Protection scope of the present invention is each fallen with modification.
Claims (12)
1. a kind of doping method, which comprises the following steps:
S1: one second conduction type pre-doping layer is formed in one first conductivity type substrate；
S2: being arranged one first exposure mask on the second conduction type pre-doping layer, on the second conduction type pre-doping layer not by
The region that first exposure mask blocks is the first open area；
S3: the second conduction that the first conductive type ion injection is carried out to first open area to neutralize first open area
Type doping, so that first open area is in neutrality state, makes first conductivity type substrate leave first exposure mask later
The zone of action；
S4: being arranged one second exposure mask on the second conduction type pre-doping layer, on the second conduction type pre-doping layer not by
The region that second exposure mask blocks is the second open area, and wherein second open area is Chong Die with first open area, should
Second open area is less than first open area；
S5: carrying out the first conductive type ion injection to second open area so that second open area formation first is led
Electric type doped region makes first conductivity type substrate leave the zone of action of second exposure mask, wherein without injection later
Second conduction type pre-doping layer is the second conduction type doped region, only undergoes the first of first conductive type ion injection
Open area is differential gap, and the first conduction type doped region and the second conduction type doped region are kept apart by differential gap.
2. doping method as described in claim 1, which is characterized in that the second conduction type pre-doping layer is doped with second
The amorphous silicon or polysilicon of conduction type doped chemical.
3. doping method as described in claim 1, which is characterized in that the second conduction type pre-doping layer passes through following steps
It is formed: growing amorphous silicon or polysilicon in first conductivity type substrate, and adulterate the second conduction type doped chemical in situ.
4. doping method as described in claim 1, which is characterized in that the second conduction type pre-doping layer passes through following steps
It is formed: growing amorphous silicon or polysilicon in first conductivity type substrate, pass through the ion of the second conduction type doped chemical
It is infused in the amorphous silicon or polysilicon and forms the doping of the second conduction type, alternatively,
Amorphous silicon or polysilicon are grown in first conductivity type substrate, and the doping of the second conduction type is formed by thermal diffusion.
5. the doping method as described in any one of claim 1-4, which is characterized in that the width of the differential gap be 0.1 μm-
500 μm, which adulterates 10 μm -3000 μm of sector width, which adulterates 10 μm of -3000 μ of sector width
m。
6. the doping method as described in any one of claim 1-4, which is characterized in that the second conduction type pre-doping layer
Thickness 5nm-500nm.
7. the doping method as described in any one of claim 1-4, which is characterized in that the second conduction type pre-doping layer is
The amorphous silicon and polysilicon of boron injection, implantation dosage 5e14-5e15/cm2, Implantation Energy 0.1keV-10keV,
Alternatively, the phosphorus implantation dosage of differential gap is 5e14-5e15/cm2, Implantation Energy 0.1keV-10keV,
Alternatively, the first conduction type doped region is the amorphous silicon and polysilicon of phosphorus injection, implantation dosage 1e15-1e16/cm2, note
Entering energy is 0.1keV-10keV.
8. the doping method as described in any one of claim 1-4, which is characterized in that first exposure mask is with several the
Graphite, ceramics, silica, aluminium oxide, silicon carbide or the silicon wafer of one slit,
Second exposure mask be graphite, ceramics, silica, aluminium oxide, silicon carbide or silicon wafer with several second slits,
First slit and second slit correspond, and slit direction is consistent.
9. doping method as claimed in claim 8, which is characterized in that the width of first slit is 50 μm -1000 μm, adjacent
Spacing between first slit is 1mm-5mm,
Alternatively, the width of second slit is 50 μm -1000 μm, the spacing between adjacent second slit is 1mm-5mm.
10. doping method as claimed in claim 9, which is characterized in that first mask to first conductivity type substrate
Distance is 1mm-20mm,
Alternatively, the distance of second mask to first conductivity type substrate is 1mm-20mm.
11. doping method as claimed in claim 8, which is characterized in that first exposure mask and second exposure mask be located at it is same from
In sub- injection device, the alignment error between first exposure mask and second exposure mask is 1 μm -50 μm, which is first
The vertical range of the center line of slit and the center line of corresponding second slit.
12. doping method as claimed in claim 8, which is characterized in that first exposure mask and second exposure mask are same exposure mask
The different zones of plate, wherein the center line of the first slit is less than or equal to 50 with the vertical range of the center line of corresponding second slit
μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810011757.9A CN110010719B (en) | 2018-01-05 | 2018-01-05 | Doping method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810011757.9A CN110010719B (en) | 2018-01-05 | 2018-01-05 | Doping method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110010719A true CN110010719A (en) | 2019-07-12 |
| CN110010719B CN110010719B (en) | 2021-02-19 |
Family
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| CN201810011757.9A Active CN110010719B (en) | 2018-01-05 | 2018-01-05 | Doping method |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637892A (en) * | 2024-01-26 | 2024-03-01 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080295882A1 (en) * | 2007-05-31 | 2008-12-04 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
| CN103975450A (en) * | 2011-10-11 | 2014-08-06 | 瓦里安半导体设备公司 | Method of creating two dimensional doping patterns in solar cells |
| CN105659395A (en) * | 2013-12-09 | 2016-06-08 | 太阳能公司 | Solar cell emitter region fabrication using ion implantation |
-
2018
- 2018-01-05 CN CN201810011757.9A patent/CN110010719B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080295882A1 (en) * | 2007-05-31 | 2008-12-04 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
| CN103975450A (en) * | 2011-10-11 | 2014-08-06 | 瓦里安半导体设备公司 | Method of creating two dimensional doping patterns in solar cells |
| CN105659395A (en) * | 2013-12-09 | 2016-06-08 | 太阳能公司 | Solar cell emitter region fabrication using ion implantation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637892A (en) * | 2024-01-26 | 2024-03-01 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
| CN117637892B (en) * | 2024-01-26 | 2024-04-30 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
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| Publication number | Publication date |
|---|---|
| CN110010719B (en) | 2021-02-19 |
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