CN102122683A - Process for preparing selective emitter of monocrystalline silicon solar cell with corrosion slurry method - Google Patents
Process for preparing selective emitter of monocrystalline silicon solar cell with corrosion slurry method Download PDFInfo
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- CN102122683A CN102122683A CN2011100291268A CN201110029126A CN102122683A CN 102122683 A CN102122683 A CN 102122683A CN 2011100291268 A CN2011100291268 A CN 2011100291268A CN 201110029126 A CN201110029126 A CN 201110029126A CN 102122683 A CN102122683 A CN 102122683A
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Abstract
The invention relates to a process for preparing a selective emitter of a monocrystalline silicon solar cell with a corrosion slurry method. A utilized technology is designed based on a common cell plate production line, the original step of growing an antireflecting film by adopting PECVD (Plasma Enhanced Chemical Vapor Deposition) is advanced to the completion of primary diffusion, meanwhile, the printing step and the removing step of corrosion slurry and secondary diffusion of a phosphorus element are added. Silicon nitride is simultaneously utilized as a barrier layer of the secondary diffusion and the antireflecting film of a cell plate. In the invention, the silicon nitride is utilized as the barrier layer of the diffusion, and the step of growing the antireflecting film by adopting the PECVD is an indispensable procedure for producing the monocrystalline silicon cell plate, therefore no addition step is added. The silicon nitride barrier layer of a selective emitter region is broken by the corrosion slurry; compared with a general physical method, the process does not need a special device and high temperature; and compared with a general chemical method, the process is simple. After the process is utilized, the average conversion efficiency of the cell plates produced in batches by a company reaches 18.5%, which is far higher than the industrial average level and achieves world-leading levels.
Description
Technical field
The present invention relates to a kind of preparation of monocrystaline silicon solar cell sheet, be specifically related to a kind of corrosive slurry and prepare the method that monocrystaline silicon solar cell is selected emitter.
Background technology
In the monocrystaline silicon solar cell sheet, the factor that the restriction conversion efficiency improves mainly contains two links, promptly diffusion and metal electrode are made, high diffusion concentration helps forming between the emitter region of electrode and battery front side good electrode contact performance, but defect concentration is increased, photon absorption efficiency reduces, in order to address this problem, the selection emitter structure has been proposed, promptly carrying out high concentration in the zone that contacts with electrode mixes deeply, and carry out the shallow doping of low concentration in other zone, this structure just is called as the selection emitter, the structure that can effectively improve monocrystaline silicon solar cell sheet conversion efficiency of selecting emitter facts have proved.
Current, prepare and select the method for emitter a lot, mainly contain the photo etched mask technology law, the mask process method of the technology law of struggling against the corrosive influence, mechanical texture alignment diffusion method, heating source, autodoping slurry method, silk screen printing slurry method, secondary printing slurry method, laser grooving method etc.
The typical feature of mask technology be earlier on silicon chip oxidation obtain layer of silicon dioxide, utilize photoetching technique to carve electrode zone again, carry out heavily phosphorous diffusion first time then, remove silicon dioxide layer after, second time light dope is carried out in whole emitter region spreads.This method can improve the conversion efficiency of battery sheet to a certain extent, but because silicon chip will be through twice high temperature in preparation process, and is very big and hear rate is also big to the damage of silicon chip, from emitter quality and technology cost, is not a kind of desirable method.
The characteristics of the technology of struggling against the corrosive influence are to form earlier heavily doped region on surface of silicon; after utilizing protection glue to cover the heavily doped region at electrode place; with the technology of struggling against the corrosive influence non-electrode is gone to corrode; with surface impurity concentration and the junction depth that reduces this place; this method also needs to adopt photoetching technique or mask technique; very time-consuming; and the damage meeting that causes in the corrosion process causes adverse effect to the contact of electrode; these technologies only could balance each other with the increase of cost when battery sheet efficient has 2% increase; therefore, can not in production in enormous quantities, use.
The characteristics of autodoping slurry method are at first evenly to be coated with the source at silicon chip surface to spread, when screen printing electrode, mix the phosphorus of high concentration then in the electrode slurry, promptly form the autodoping slurry, just highly doped behind the sintering in the acquisition of electrode contact zone, and form good Ohmic contact.Because the sintering process time of electrode is very short, the diffusion of phosphorus atoms is limited, so the dark diffusion of high-doped zone and not obvious.
The laser grooving method also is a kind of common methods of selecting emitter for preparing, be characterized at first utilizing laser cutting on silicon chip surface, utilize silk screen printing or spin coating method on silicon chip surface, to coat the phosphorus slurry again, the amount that obtains phosphorus slurry in cutting is bigger than the cutting outside, the diffusion back forms highly doped dark diffusion region near the etching groove, and obtain low-doped shallow diffusion region in other zone, in cutting, make buried gate electrode then.This method can improve battery sheet conversion efficiency effectively, however its complex process, and the expensive most of operation of cost all will be passed through high temperature, therefore also is difficult to be applied to suitability for industrialized production.
People such as the Qu Sheng of Yunnan Normal University have studied a kind of method of utilizing silk screen printing to make the selection emitter, this method is that the silicon chip after making herbs into wool is finished is positive with the phosphorus slurry of silk screen in electrode zone printing high concentration, and then carry out diffuse normal in the phosphorus oxychloride atmosphere, will form the doping of high concentration like this at electrode zone.This method technology is simple, only need a pyroprocess, yet this method to could form the dark diffusion of high concentration after spreading for a long time, this certainly will bring very big difficulty to the concentration gradient control of junction depth and the vertical P elements of battery sheet, and therefore also hard to say is a kind of complete method.
As the patent No. is that " a kind of prepare the method that crystal silicon solar energy battery is selected emitter " of CN200910264855.4 is though be significantly improved, but still need professional laser generation equipment, and will be in preparation process through 1200 ~ 1400 ℃ high temperature, though the time is short, but cause damage also will certainly for the battery sheet, in addition, because the actual property of this method localized heating, can cause the battery sheet to be out of shape, bring very big trouble to subsequent handling because of the inequality of being heated.
Summary of the invention
The objective of the invention is problem at the existing complex process of current existing emitter technology of preparing, equipment requirements height and emitter weak effect, invent a kind of can on normal monocrystalline silicon battery slice assembly line, finishing and do not need the selection emitter technology of increase equipment and good quality, effectively raise battery sheet conversion efficiency, reduce production costs.
Technical scheme of the present invention is:
A kind of corrosive slurry legal system that adopts is equipped with the technology that monocrystaline silicon solar cell is selected emitter, and it may further comprise the steps:
(a), on the sensitive surface grown silicon nitride barrier layer of once spreading the N type silicon chip that obtains;
(b), at zone printing one deck corrosive slurry that the upper surface of silicon nitride barrier need print electrode, corrode this zone, need the print electrode silicon nitride barrier in zone of removal obtains the N type silicon chip that silicon nitride barrier is removed in the gate electrode line corresponding region;
(c), the N type silicon chip that obtains of cleaning step (b), remove product and remaining corrosive slurry after the corrosion, oven dry then;
(d), the N type silicon chip after will drying places diffusion furnace, with phosphorus oxychloride POCl
3As diffuse source, carry out the secondary diffusion, obtain having the N type silicon chip of selecting emitter.
In the step of the present invention (a), the preparation method of N type silicon chip is: P type silicon chip is placed diffusion furnace, with phosphorus oxychloride POCl
3As diffuse source, POCl
3Decompose the P that produces
2Q
5Be deposited on silicon chip surface, P
2Q
5Generate SiO with pasc reaction
2And phosphorus atoms, and at silicon face formation one deck phosphorus-silex glass, phosphorus atoms spreads in silicon more again then, once spreads on the surface of P type silicon chip to obtain N type silicon chip.
In the step of the present invention (a), the method on the sensitive surface grown silicon nitride barrier layer of N type silicon chip is: with the sensitive surface growth one deck silicon nitride film of plasma enhanced chemical vapor deposition method PECVD at N type silicon chip, depositing temperature is 350-500 ℃, time is 35-45 minute, and the thickness of the silicon nitride film of growth is 60-100nm.
Among the present invention, with the sensitive surface growth one deck silicon nitride film of plasma enhanced chemical vapor deposition method PECVD at N type silicon chip, depositing temperature is 400-500 ℃, and the time is 40 minutes.
Among the present invention, the silicon nitride of growing on the N type silicon chip sensitive surface is the barrier layer of secondary diffusion, also is the antireflection layer of monocrystaline silicon solar cell simultaneously.
In the step of the present invention (b), remove silicon nitride barrier on the grid region that to print electrode, form secondary POCl with corrosive slurry
3The passage of diffusion.
In the step of the present invention (d), the method for secondary diffusion places diffusion furnace for the N type silicon chip after will drying, with POCl
3As diffuse source, 750-820 ℃ of insulation 15-25 minute, be warmed up to 830-890 ℃ of insulation 5-15 minute then, carry out the secondary diffusion.
In the step of the present invention (d), the method for secondary diffusion places diffusion furnace for the N type silicon chip after will drying, with POCl
3Carry out as diffuse source,, be warmed up to 860 ℃ of insulations 10 minutes then, carry out the secondary diffusion 800 ℃ of insulations 20 minutes.
In the step of the present invention (d), POCl during the secondary diffusion
3Concentration be 1000SCCM.
In the step of the present invention (b), corrosive slurry contains phosphoric acid H
3PO
4, concentration is 20-35%, and corrosion temperature is 60-90 ℃, and typographic corrosive slurry layer thickness is 5-10mm.
Beneficial effect of the present invention:
The technology that the present invention adopts is based on common battery slice assembly line and designs, and PECVD growth antireflective coating operation that just will be original advances to after once diffusion is finished, and has increased the printing of corrosive slurry and the secondary of removal and P elements in addition and has spread.Silicon nitride is simultaneously as the barrier layer of secondary diffusion and the antireflection layer of battery sheet.The barrier layer that the present invention adopts silicon nitride to be used as spreading, PECVD growth antireflective coating was exactly the necessary operation of produce single crystal silicon cell originally, therefore, did not have extra increase operation.Break the silicon nitride barrier of selecting emitter region with corrosive slurry, compare with general physical method and need not special equipment and without high temperature, to compare technology simple with general chemical method.After adopting this technology, the average conversion efficiency of battery sheet that company produces in batches reaches 18.5%, far above the industry average level, reaches the top level in the world.
Description of drawings
Fig. 1 is a process chart of the present invention.
Embodiment
Following accompanying drawing and the present invention is further illustrated in conjunction with the embodiments.
As shown in Figure 1, a kind of corrosive slurry legal system that adopts is equipped with the technology that monocrystaline silicon solar cell is selected emitter, it all is the general procedure of preparation monocrystaline silicon solar cell that the printing of wherein making herbs into wool, diffusion, PECVD growth antireflective coating, electrode and sintering and battery sheet conversion efficiency detect, the secondary diffusion of growthing silica barrier layer, printing corrosive slurry, removal corrosive slurry and P elements is that this patent relates to the operation that emitter is selected in the method preparation, and following mask body is introduced this several step process:
Not only as the barrier layer of secondary diffusion, also as the antireflection layer of battery sheet, grew 40 minutes down at 400 ~ 500 ℃ simultaneously in the positive grown silicon nitride of battery sheet after having spread barrier layer, the silicon nitride layer of growth.
The printing corrosive slurry, after the silicon nitride barrier growth is finished, at the corrosive slurry of silicon nitride barrier surface electrode grid line corresponding position printing one deck 5 ~ 10mm, the purpose of printing slurry is the silicon nitride barrier that will erode the gate electrode line corresponding region, opens the passage of secondary phosphorous diffusion.
Remove corrosive slurry, with running water flushing battery sheet, remove product and remaining slurry earlier, use purified rinse water battery sheet then, use washed with de-ionized water at last, then oven dry.
The secondary diffusion of P elements places diffusion furnace to carry out the secondary diffusion battery sheet after the oven dry, with POCl
3As diffuse source, concentration is 1000SCCM, is warmed up to 860 ℃ of insulations 10 minutes in 20 minutes then 800 ℃ of insulations, obtains having the N type silicon chip of selecting emitter.
To have the N type silicon chip of selecting emitter puts into the etching groove and carries out etching.
At last, selecting printing of emitter corresponding region and sintered metal electrode.
The part that the present invention does not relate to prior art that maybe can adopt all same as the prior art is realized.
Claims (10)
1. one kind is adopted the corrosive slurry legal system to be equipped with the technology that monocrystaline silicon solar cell is selected emitter, it is characterized in that it may further comprise the steps:
(a), on the sensitive surface grown silicon nitride barrier layer of once spreading the N type silicon chip that obtains;
(b), at zone printing one deck corrosive slurry that the upper surface of silicon nitride barrier need print electrode, corrode this zone, need the print electrode silicon nitride barrier in zone of removal obtains the N type silicon chip that silicon nitride barrier is removed in the gate electrode line corresponding region;
(c), the N type silicon chip that obtains of cleaning step (b), remove product and remaining corrosive slurry after the corrosion, oven dry then;
(d), the N type silicon chip after will drying places diffusion furnace, with phosphorus oxychloride POCl
3As diffuse source, carry out the secondary diffusion, obtain having the N type silicon chip of selecting emitter.
2. employing corrosive slurry legal system according to claim 1 is equipped with the technology that monocrystaline silicon solar cell is selected emitter, it is characterized in that in the step (a), the preparation method of N type silicon chip is: P type silicon chip is placed diffusion furnace, with phosphorus oxychloride POCl
3As diffuse source, once spread on the surface of P type silicon chip and to obtain N type silicon chip.
3. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 described employing corrosive slurry legal system, it is characterized in that in the step (a), the method on the sensitive surface grown silicon nitride barrier layer of N type silicon chip is: with the sensitive surface growth one deck silicon nitride film of plasma enhanced chemical vapor deposition method PECVD at N type silicon chip, depositing temperature is 350-500 ℃, time is 35-45 minute, and the thickness of the silicon nitride film of growth is 60-100nm.
4. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 or 3 described employing corrosive slurry legal systems, it is characterized in that, with the sensitive surface growth one deck silicon nitride film of plasma enhanced chemical vapor deposition method PECVD at N type silicon chip, depositing temperature is 400-500 ℃, and the time is 40 minutes.
5. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 described employing corrosive slurry legal system, it is characterized in that in the silicon nitride barrier that once spreads the N type silicon chip sensitive surface growth that obtains, being the barrier layer of secondary diffusion, also is the antireflection layer of monocrystaline silicon solar cell simultaneously.
6. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 described employing corrosive slurry legal system, it is characterized in that in the step (b), remove silicon nitride barrier on the grid region that to print electrode, form secondary POCl with corrosive slurry
3The passage of diffusion.
7. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 described employing corrosive slurry legal system, it is characterized in that in the step (d), the method for secondary diffusion places diffusion furnace for the N type silicon chip after will drying, with POCl
3As diffuse source, 750-820 ℃ of insulation 15-25 minute, be warmed up to 830-890 ℃ of insulation 5-15 minute then, carry out the secondary diffusion.
8. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 7 described employing corrosive slurry legal systems, it is characterized in that in the step (d), the method for secondary diffusion places diffusion furnace for the N type silicon chip after will drying, with POCl
3Carry out as diffuse source,, be warmed up to 860 ℃ of insulations 10 minutes then, carry out the secondary diffusion 800 ℃ of insulations 20 minutes.
9. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to the described employing corrosive slurry legal system in one of claims 1,7 or 8, it is characterized in that in the step (d), POCl during the secondary diffusion
3Concentration be 1000SCCM.
10. be equipped with the technology that monocrystaline silicon solar cell is selected emitter according to claims 1 described employing corrosive slurry legal system, it is characterized in that corrosive slurry contains phosphoric acid H in the step (b)
3PO
4, concentration is 20-35%, and corrosion temperature is 60-90 ℃, and typographic corrosive slurry layer thickness is 5-10mm.
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| CN2011100291268A CN102122683A (en) | 2011-01-27 | 2011-01-27 | Process for preparing selective emitter of monocrystalline silicon solar cell with corrosion slurry method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945892A (en) * | 2012-11-07 | 2013-02-27 | 南通大学 | Method for manufacturing solar cell |
| CN104103716A (en) * | 2014-06-30 | 2014-10-15 | 浙江晶科能源有限公司 | Method for implementation of honeycomb light trapping velvet of polycrystalline silicon solar cell |
| CN106409923A (en) * | 2012-08-09 | 2017-02-15 | 三菱电机株式会社 | Manufacturing method of solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040242019A1 (en) * | 2001-10-10 | 2004-12-02 | Sylke Klein | Combined etching and doping substances |
| CN101533870A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Technology for preparing grooved printing electrode of crystalline silicon solar cell |
| US20110014772A1 (en) * | 2009-07-20 | 2011-01-20 | Huai-Tsung Chen | Aligning method of patterned electrode in a selective emitter structure |
-
2011
- 2011-01-27 CN CN2011100291268A patent/CN102122683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040242019A1 (en) * | 2001-10-10 | 2004-12-02 | Sylke Klein | Combined etching and doping substances |
| CN101533870A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Technology for preparing grooved printing electrode of crystalline silicon solar cell |
| US20110014772A1 (en) * | 2009-07-20 | 2011-01-20 | Huai-Tsung Chen | Aligning method of patterned electrode in a selective emitter structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409923A (en) * | 2012-08-09 | 2017-02-15 | 三菱电机株式会社 | Manufacturing method of solar cell |
| CN102945892A (en) * | 2012-11-07 | 2013-02-27 | 南通大学 | Method for manufacturing solar cell |
| CN102945892B (en) * | 2012-11-07 | 2015-08-05 | 南通大学 | A kind of method for manufacturing solar battery |
| CN104103716A (en) * | 2014-06-30 | 2014-10-15 | 浙江晶科能源有限公司 | Method for implementation of honeycomb light trapping velvet of polycrystalline silicon solar cell |
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Application publication date: 20110713 |