CN109980105B - QLED device - Google Patents
QLED device Download PDFInfo
- Publication number
- CN109980105B CN109980105B CN201711460056.5A CN201711460056A CN109980105B CN 109980105 B CN109980105 B CN 109980105B CN 201711460056 A CN201711460056 A CN 201711460056A CN 109980105 B CN109980105 B CN 109980105B
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- layer
- dot material
- light
- qled device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
Abstract
The invention provides a QLED device, which comprises a light-emitting layer, wherein the light-emitting layer is formed by laminating a blue light quantum dot material layer A and a yellow light quantum dot material layer B in an [ ABA ] n mode, n is 1-3, the valence band difference between the blue light quantum dot material and the yellow light quantum dot material is 0, and the conduction band energy level of the blue light quantum dot material is at least 0.5eV higher than that of the yellow light quantum dot material. The single band difference superlattice structure is introduced into the light-emitting layer to improve the recombination efficiency of the quantum dots and the light-emitting purity of the device, and the accumulation of charges of the quantum dot layer is avoided.
Description
Technical Field
The invention relates to the technical field of QLED devices, in particular to a QLED device.
Background
The colloidal quantum dots have considerable application prospect in the field of display devices due to high fluorescence efficiency, good monochromaticity, adjustable light-emitting wavelength and good stability. The Quantum dot-based light-emitting diode (QLED) has the advantages of better color saturation, energy efficiency, color temperature, long service life and the like, and is expected to become the mainstream technology of next-generation solid illumination and flat panel display.
The white light quantum dot light-emitting diode device has less reports, and one of the main structures is that the three-primary-color quantum dot is adopted for emitting light, namely, red, green and blue quantum dots are selected as the three-primary-color mixed light to be white; the second one adopts blue fluorescent powder as a substrate, combines the luminescence of yellow quantum dots, and generates white light under the combined action of the excitation of the blue fluorescent powder. However, the electron injection capability of the electron transport layer material used in the current white light quantum dot light emitting diode device is generally stronger than the hole injection capability of the hole transport layer material, so that excessive electron injection causes self-luminescence of the device function layer such as the hole transport layer, thereby affecting the luminous purity and recombination efficiency of the quantum dot light emitting device. In addition, if the transport of excessively injected electrons in the quantum dot light emitting layer is hindered, electric charges may be accumulated in the quantum dot light emitting layer, seriously affecting the light emitting characteristics of the quantum dot.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a QLED device and a preparation method thereof, wherein a single band difference superlattice structure is introduced into a light emitting layer, so that excessive electrons injected into the device can be limited in a quantum dot light emitting layer, and excessive electrons are prevented from being injected into a hole functional layer, so that the recombination efficiency of quantum dots and the light emitting purity of the device are improved, and the electrons injected into the quantum dot light emitting layer are transported by a resonance tunneling effect although the transport of the electrons is relatively limited, but can be transported in the single band difference superlattice structure and can be timely recombined with holes which are not limited by the transport to form more than two kinds of light emitting to form white light, so that the accumulation of charges in the quantum dot layer is avoided.
The technical scheme of the invention is as follows:
a QLED device comprises a light-emitting layer, wherein the light-emitting layer is formed by laminating a blue light quantum dot material layer A and a yellow light quantum dot material layer B according to [ ABA ] n, n is 1-3, the valence band difference between the blue light quantum dot material and the yellow light quantum dot material is 0, and the conduction band energy level of the blue light quantum dot material is at least 0.5eV higher than that of the yellow light quantum dot material.
The quantum dot light-emitting device provided by the invention is characterized in that the light-emitting layer is formed by a blue light quantum dot material layer A and a yellow light quantum dot material layer B according to an [ ABA ] n laminated mode, and the single band difference superlattice structure shown in the attached drawings 1 and 2 is formed. The valence band difference of two materials in the single band difference superlattice structure is 0, and at the moment, the transport of holes in the light-emitting layer is not scattered by a potential barrier, so that the holes and electrons can be timely compounded to emit light, and the accumulation of charges is avoided. The conduction band energy level of the blue light-emitting quantum dot material in the single band difference superlattice structure is at least 0.5eV higher than that of the yellow light-emitting quantum dot material, so that the binding effect of the light-emitting layer on electron transportation is guaranteed. The single band difference superlattice structure can generate more than two kinds of luminescence, and blue luminescence and yellow luminescence emitted in a visible light range are compounded to form white light.
Drawings
Fig. 1 is a schematic structural diagram of a QLED device according to a preferred embodiment of the present invention.
Fig. 2 is a schematic structural diagram of another preferred embodiment of a QLED device according to the present invention.
Detailed Description
The invention provides a QLED device and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The light emitting layer of the invention can be applied to various existing QLED device structures. Specifically, fig. 1 is a schematic structural diagram of a QLED device according to a preferred embodiment of the present invention, as shown in fig. 1, a positive QLED device is taken as an example in the embodiment of the present invention, the QLED device sequentially includes, from bottom to top, an anode substrate 101, a hole functional layer 102, a light emitting layer 103, an electron functional layer 104, a cathode layer 105, and an encapsulation layer 106, where the light emitting layer 103 is formed by stacking a blue light quantum dot material layer a and a yellow light quantum dot material layer B according to [ ABA ] n, n is 1 to 3, a valence band difference between the blue light quantum dot material and the yellow light quantum dot material is 0, and a conduction band energy level of the blue light quantum dot material is at least 0.5eV higher than a conduction band energy level of the yellow light quantum dot material.
Specifically, the invention provides a quantum dot light emitting device, wherein the light emitting layer 103 is formed by a blue light quantum dot material layer A and a yellow light quantum dot material layer B in a [ ABA ] n laminated manner to form a single band difference superlattice structure as shown in the attached figures 1 and 2. The valence band difference of two materials in the single band difference superlattice structure is 0, and at the moment, the transport of holes in the light-emitting layer is not scattered by a potential barrier, so that the holes and electrons can be timely compounded to emit light, and the accumulation of charges is avoided. The conduction band energy level of the blue light-emitting quantum dot material in the single band difference superlattice structure is at least 0.5eV higher than that of the yellow light-emitting quantum dot material, so that the binding effect of the light-emitting layer on electron transportation is guaranteed. The single band difference superlattice structure can generate more than two kinds of luminescence, and blue luminescence and yellow luminescence emitted in a visible light range are compounded to form white light.
Further, as shown in fig. 1, the structure of the light emitting layer 103 is a light emitting layer 103 formed by laminating a blue light quantum dot material layer a and a yellow light quantum dot material layer B in a [ ABA ] n manner, where n is 1 to 3, and preferably, n is 2 in the light emitting layer 103.
Further, in the invention, the blue light quantum dot material is selected from one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds and IV elementary substances with the peak value of the emission spectrum in the blue light emitting interval of 420 nm-520 nm. Preferably, the blue light quantum dot material is selected from ZnS or ZnSe.
Further, in the invention, the yellow light quantum dot material is selected from one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds and IV elementary substances with the peak value of the emission spectrum within the yellow emission range of 520nm to 630 nm. Preferably, the yellow light quantum dot material is selected from CdSe or CdS.
The semiconductor materials used in the light-emitting layer of the present invention include, but are not limited to, nanocrystals of II-VI semiconductors such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, ternary, quaternary II-VI compounds; nanocrystals of group III-V semiconductors such as GaP, GaAs, InP, InAs and other binary, ternary, quaternary III-V compounds; the semiconductor material for electroluminescence is not limited to group II-V compounds, group III-VI compounds, group IV-VI compounds, group I-III-VI compounds, group II-IV-VI compounds, group IV simple substance, and the like.
Further, the total thickness of the light emitting layer is 12 to 165nm, wherein the thickness of the single [ ABA ] composite layer structure is 12 to 55 nm. For the blue light quantum dot material layer a of the light emitting layer with the single band difference superlattice structure, in order to ensure the formation of the superlattice structure, the thickness of the blue light quantum dot material layer a should not be too thick, preferably, the thickness of the blue light quantum dot material layer a is 1-5nm, and the too thick blue light quantum dot material layer a is not beneficial to the formation of the superlattice structure, and may cause the resistance of the device to be too large, and the performance of the device is reduced. The thickness of the yellow light quantum dot material layer B is 10-25nm, and the yellow light quantum dot material layer B can be flexibly adjusted according to the thickness of the light emitting layer.
Further, in the present invention, the anode substrate 101 may be made of one or more materials selected from indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), and aluminum-doped zinc oxide (AZO); the hole injection layer is one or more of poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PSS), undoped transition metal oxide, doped transition metal oxide, metal sulfide and doped metal sulfide.
Further, in the present invention, the hole function layer 102 material may be selected from organic materials having a hole transport ability, including, but not limited to, poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK), poly (N, N ' bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4', 4 "-tris (carbazol-9-yl) trianiline (TCTA), 4' -bis (9-Carbazol) Biphenyl (CBP), N ' -diphenyl-N, n ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine (NPB), doped graphene, undoped graphene, C60Or mixtures thereof; the hole function layer material can also be selected from inorganic materials with hole transport capacity, including but not limited to doped or undoped NiO, WO3、MoO3CuO, or mixtures thereof;
furthermore, the material of the electronic function layer 104 in the present invention is n-type ZnO or TiO2、SnO、Ta2O3AlZnO, ZnSnO, InSnO, Alq3 tris (8-hydroxyquinoline) aluminum, Ca, Ba, CsF, LiF, CsCO3One or more of; preferably, the electronic function layer is n-type ZnO or n-type TiO2(ii) a The cathode is Al or Ag;
further, in the above embodiment, the hole function layer may be one or more of a hole injection layer, a hole transport layer, and an electron blocking layer.
Further, in the above embodiments, the electron function layer may be one or more of an electron injection layer, an electron transport layer, and a hole blocking layer.
It should be noted that the hole injection layer, the hole transport layer, the electron blocking layer, the electron injection layer, the electron transport layer, and the hole blocking layer are not essential and may be increased or decreased according to the actual situation.
Based on the composite quantum dot light emitting diode device, in combination with the specific embodiment of the present invention, there is also provided a method for manufacturing a QLED device, wherein the method includes the steps of:
s10, depositing a hole function layer 102 on the surface of the anode substrate 101;
s20, depositing a light-emitting layer 103 on the surface of the hole function layer 102;
s30, depositing an electronic function layer 104 on the surface of the light-emitting layer 103;
s40 depositing a cathode layer 105 on the surface of the electronic function layer 104 to obtain the QLED device.
Specifically, when the composite quantum dot light emitting diode device shown in fig. 1 is prepared, taking a magnetron sputtering method as an example, the step S20 specifically includes: the substrate is transparent glass on which ITO and a hole functional layer have been deposited. The target material is a blue light quantum dot material A with the purity of 99.99 percent, such as ZnS round target, and a yellow light quantum dot material B with the purity of 99.9 percent, such as CdS target. Taking out the substrate, drying the substrate by a vacuum drying oven or an infrared lamp, and putting the substrate into a sputtering device. And starting an ionization power supply, aligning the substrate to a cleaning rod, cleaning for 12min, and removing particles attached to the surface of the substrate. The distance between the target and the substrate is 4.5-5 cm, the Ar gas flow is 25.0ml/min, the jet deposition pressure is 0.5-0.6 Pa, and the effective radio frequency power is about 100W. In one period, selecting the radio frequency sputtering time of CdS and ZnS according to the required thickness, and repeatedly sputtering for several periods to obtain the luminescent layer of the ZnS/CdS superlattice film.
Further, in the present invention, the deposition method of each layer may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a successive ionic layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; the physical method includes, but is not limited to, one or more of spin coating, printing, knife coating, dip coating, dipping, spray coating, roll coating, casting, slit coating, bar coating, thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition.
The scheme of the invention is further explained by the following concrete examples:
example 1
The structure of the QLED device of this embodiment is: an ITO anode layer, a PEDOT: PSS hole injection layer, a TFB hole transport layer, a [ ZnSCdSZnS ] light emitting layer, a ZnO electron transport layer and an Al cathode layer which are sequentially laminated on a glass substrate.
The preparation method of the QLED device of this embodiment is as follows:
a. spin-coating a layer of PEDOT on the ITO substrate, wherein the PSS film is used as a hole injection layer;
b. spin-coating a TFB film on a PEDOT (PSS) layer to be used as a hole transport layer;
c. depositing a quantum dot light emitting layer based on a single band difference superlattice structure by a magnetron sputtering method, wherein the quantum dot light emitting layer is a three-layer functional layer with the single band difference superlattice energy level structure and comprises ZnSCdSZnS sequentially arranged, the thickness of the ZnS is 50nm, the thickness of ZnS on two sides is 5nm, and the thickness of CdS in the middle is 40 nm;
d. then, a ZnO film is spin-coated on the quantum dot light-emitting layer to serve as an electron transmission layer;
e. and finally, evaporating and plating a layer of Al on the ZnO to obtain the quantum dot light-emitting diode.
Example 2
The structure of the QLED device of this embodiment is: an ITO anode layer, a PEDOT/PSS hole injection layer, a TFB hole transport layer, a [ ZnSCdSZnS ]2 light emitting layer, a ZnO electron transport layer and an Al cathode layer are sequentially laminated on a glass substrate.
The preparation method of the QLED device of this embodiment is as follows:
a. spin-coating a layer of PEDOT on the ITO substrate, wherein the PSS film is used as a hole injection layer;
b. spin-coating a TFB film on a PEDOT (PSS) layer to be used as a hole transport layer;
c. depositing a quantum dot light emitting layer based on a single band difference superlattice structure by a magnetron sputtering method, wherein the quantum dot light emitting layer is a six-layer functional layer with the single band difference superlattice energy level structure and comprises [ ZnSCdSZnS ]2 which is sequentially arranged, and the thickness of the quantum dot light emitting layer is 40nm, wherein the ZnS thicknesses on two sides are both 5nm, and the thickness of the CdS in the middle is 10 nm;
d. then, a ZnO film is spin-coated on the quantum dot light-emitting layer to serve as an electron transmission layer;
e. and finally, evaporating and plating a layer of Al on the ZnO to obtain the quantum dot light-emitting diode.
Example 3
The structure of the QLED device of this embodiment is: an ITO anode layer, a PEDOT/PSS hole injection layer, a TFB hole transport layer, a [ ZnSCdSZnS ]2 light emitting layer, a ZnO electron transport layer and an Al cathode layer are sequentially laminated on a glass substrate.
The preparation method of the QLED device of this embodiment is as follows:
a. spin-coating a layer of PEDOT on the ITO substrate, wherein the PSS film is used as a hole injection layer;
b. spin-coating a TFB film on a PEDOT (PSS) layer to be used as a hole transport layer;
c. depositing a quantum dot light emitting layer based on a single band difference superlattice structure by a magnetron sputtering method, wherein the quantum dot light emitting layer is a six-layer functional layer with the single band difference superlattice energy level structure and comprises [ ZnSCdSZnS ]2 which is sequentially arranged, the thickness of the ZnS layer is 36nm, the thickness of ZnS layers on two sides is 4nm, and the thickness of CdS in the middle is 10 nm;
d. then, a ZnO film is spin-coated on the quantum dot light-emitting layer to serve as an electron transmission layer;
e. and finally, evaporating and plating a layer of Al on the ZnO to obtain the quantum dot light-emitting diode.
In summary, according to the QLED device and the manufacturing method thereof provided by the present invention, the light emitting layer is a single band difference superlattice structure formed by stacking the blue light quantum dot material layer a and the yellow light quantum dot material layer B in an [ ABA ] n stacking manner, where n is the number of stacked layers. The valence band difference of two materials in the single band difference superlattice structure is 0, and at the moment, the transport of holes in the light-emitting layer is not scattered by a potential barrier, so that the holes and electrons can be timely compounded to emit light, and the accumulation of charges is avoided. The conduction band energy level of the blue light-emitting quantum dot material in the single band difference superlattice structure is at least 0.5eV higher than that of the yellow light-emitting quantum dot material, so that the binding effect of the light-emitting layer on electron transportation is guaranteed. The single band difference superlattice structure can generate more than two kinds of luminescence, and blue luminescence and yellow luminescence emitted in a visible light range are compounded to form white light.
Claims (10)
1. A QLED device, comprising a light-emitting layer, wherein the light-emitting layer is formed by laminating a blue light quantum dot material layer A and a yellow light quantum dot material layer B according to [ ABA ] n, n is 1-3, the valence band difference between the blue light quantum dot material and the yellow light quantum dot material is 0, and the conduction band energy level of the blue light quantum dot material is at least 0.5eV higher than that of the yellow light quantum dot material.
2. A QLED device according to claim 1, wherein n is 2.
3. The QLED device of claim 1, wherein the peak of the emission spectrum of the blue light quantum dot material is 420nm to 520 nm; and/or the peak of the luminescence spectrum of the yellow light quantum dot material is 520 nm-630 nm.
4. The QLED device of claim 1, wherein the blue light quantum dot material and the yellow light quantum dot material are independently selected from one or more of group II-VI compounds, group III-V compounds, group II-V compounds, group III-VI compounds, group IV-VI compounds, group I-III-VI compounds, group II-IV-VI compounds, and group IV elements.
5. A QLED device according to claim 4 wherein the blue quantum dot material is selected from ZnS or ZnSe; and/or the yellow light quantum dot material is selected from CdSe or CdS.
6. A QLED device according to claim 1, wherein the total thickness of the light-emitting layer is 12-165 nm.
7. A QLED device according to claim 1, characterized in that the thickness of the single [ ABA ] composite layer structure is 12-55 nm.
8. A QLED device according to claim 1, wherein the layer a of blue quantum dot material has a thickness of 1-5 nm; and/or the thickness of the yellow light quantum dot material layer B is 10-25 nm.
9. A QLED device according to any of claims 1-8, comprising a cathode and an anode, and said light-emitting layer arranged between said cathode and said anode, wherein an electron functional layer is further arranged between said cathode and said light-emitting layer.
10. The QLED device of any of claims 1-8, wherein the QLED device comprises a cathode and an anode, and the light emitting layer is disposed between the cathode and the anode, wherein a hole functional layer is further disposed between the anode and the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711460056.5A CN109980105B (en) | 2017-12-28 | 2017-12-28 | QLED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711460056.5A CN109980105B (en) | 2017-12-28 | 2017-12-28 | QLED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109980105A CN109980105A (en) | 2019-07-05 |
| CN109980105B true CN109980105B (en) | 2021-01-12 |
Family
ID=67074698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711460056.5A Active CN109980105B (en) | 2017-12-28 | 2017-12-28 | QLED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980105B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130794B (en) * | 2019-12-31 | 2022-12-13 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN113948667B (en) * | 2020-07-16 | 2023-02-07 | Tcl科技集团股份有限公司 | Light emitting device and method of manufacturing the same |
| CN116940146A (en) * | 2022-04-07 | 2023-10-24 | Tcl科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1025526C (en) * | 1992-12-15 | 1994-07-20 | 中国科学院上海技术物理研究所 | Blue-green semiconductor laser material and its preparation method |
| JP2009087756A (en) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | Light emitting element |
| CN102473800B (en) * | 2009-07-07 | 2015-09-23 | 佛罗里达大学研究基金会公司 | Stable and the machinable light emitting diode with quantum dots of all solution |
| CN102931275A (en) * | 2012-10-29 | 2013-02-13 | 四川大学 | Novel thin film solar cell with superlattice structure |
| CN105405941B (en) * | 2016-01-06 | 2019-03-01 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots and preparation method thereof based on quantum well structure |
| CN106410057B (en) * | 2016-11-08 | 2019-05-24 | Tcl集团股份有限公司 | The QLED device of Quantum Well |
-
2017
- 2017-12-28 CN CN201711460056.5A patent/CN109980105B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109980105A (en) | 2019-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106784392B (en) | Composite quantum dot light-emitting diode device and preparation method thereof | |
| KR101658691B1 (en) | Stable and all solution processable quantum dot light-emitting diodes | |
| US9419174B2 (en) | Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode | |
| KR102156760B1 (en) | Quantum dot light emitting display device and method for fabricating the same | |
| CN109148704B (en) | Quantum dot electroluminescent device and preparation method thereof | |
| CN110416421B (en) | Quantum dot film and quantum dot light-emitting diode | |
| CN110212105B (en) | Quantum dot light-emitting device, preparation method thereof and lighting device | |
| CN109980105B (en) | QLED device | |
| CN112331779B (en) | Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method | |
| CN106856205B (en) | Organic light emitting display device, method of manufacturing the same, and organic light emitting display apparatus | |
| WO2020134161A1 (en) | Quantum dot light emitting diode and preparation method thereof | |
| CN209912898U (en) | Quantum dot light emitting diode | |
| CN110600619B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN112909193A (en) | Organic light emitting device, display device and manufacturing method | |
| CN110649168B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| KR101450858B1 (en) | Organic electroluminescent device and fabracation method by using graphene oxide | |
| CN110544746B (en) | Light emitting diode and preparation method thereof | |
| WO2021136119A1 (en) | Quantum dot light emitting diode and preparation method therefor | |
| CN109980104A (en) | A kind of QLED device | |
| CN112331787B (en) | Application of metal tetraphenylporphyrin complex in electron transport material, quantum dot light-emitting device and preparation method thereof, and light-emitting device | |
| CN110970567B (en) | Quantum dot light-emitting diode | |
| KR101687637B1 (en) | White light-emitting device using the light-emitting layer and the color converting layer with a single quantum dot | |
| WO2022233145A1 (en) | Quantum dot electroluminescent device | |
| CN110943172B (en) | Quantum dot white light diode | |
| CN117939908A (en) | Photoelectric device, preparation method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 516006 TCL science and technology building, No. 17, Huifeng Third Road, Zhongkai high tech Zone, Huizhou City, Guangdong Province Applicant after: TCL Technology Group Co.,Ltd. Address before: 516006 Guangdong province Huizhou Zhongkai hi tech Development Zone No. nineteen District Applicant before: TCL RESEARCH AMERICA Inc. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |