CN109980051A - The manufacturing system and method for the full back contacts crystal silicon battery of p-type - Google Patents
The manufacturing system and method for the full back contacts crystal silicon battery of p-type Download PDFInfo
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- CN109980051A CN109980051A CN201910354995.4A CN201910354995A CN109980051A CN 109980051 A CN109980051 A CN 109980051A CN 201910354995 A CN201910354995 A CN 201910354995A CN 109980051 A CN109980051 A CN 109980051A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 79
- 238000005245 sintering Methods 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 41
- 239000004411 aluminium Substances 0.000 claims description 39
- 229910052782 aluminium Inorganic materials 0.000 claims description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 19
- 235000008216 herbs Nutrition 0.000 claims description 16
- 210000002268 wool Anatomy 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 14
- 238000001465 metallisation Methods 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of manufacturing systems of the full back contacts crystal silicon battery of p-type, multiple n+ doped regions and p+ doped region being arranged alternately are formed using the back side for being diffused in the p-type crystalline silicon substrate of the metallic atom of second electrode in laser doping and sintering process, without multiple exposure mask grooving processes, simplify the fabrication processing of the full back contacts crystal silicon battery of p-type, reduce manufacture difficulty coefficient and cost of manufacture, it is a kind of solar battery of high efficiency, low cost, convenient for industrialization large-scale application.
Description
Technical field
The present invention relates to technical field of solar batteries, more specifically, being related to a kind of full back contacts crystal silicon battery of p-type
Manufacturing system and method.
Background technique
P-type crystal silicon battery occupies always photovoltaic city due to the advantages such as processing procedure is simple, technical maturity and production cost are low
The leading position of field.But as the technology of the traction of market development and photovoltaic products promotes, traditional p-type battery is had been unable to meet
Current demand, the research and development of efficient p-type battery become the emphasis of solar battery technology development.However research field offer is efficient
Technical solution spininess is to N-type substrate, but N-type substrate increases technology difficulty when obtaining high efficiency, and cost increases therewith.For
P-type high efficiency products, the only p-type PERC battery in market (Passivated Emitterand Rear Cell, passivation emitter
With back side battery) and black silicon technology the competitiveness in terms of cost price, improved efficiency is still not strong enough at present.
For crystal silicon cell, the structure of peak efficiency is full back contacts IBC (Interdigitated back
Contact refers to and intersects back contacts) structure.But IBC structure battery, p+ and n+ doping and surface contact need all in the same face
By multiple exposure mask grooving processes, complex process, manufacture difficulty coefficient are high, cost of manufacture is high, are not easy to large-scale application.
Summary of the invention
In view of this, technical solution of the present invention provides the manufacturing system and method for a kind of full back contacts crystal silicon battery of p-type,
Without multiple exposure mask grooving processes, manufacture craft is simple, and manufacture difficulty coefficient is low, low manufacture cost, is convenient for large-scale application.
To achieve the goals above, the invention provides the following technical scheme:
A kind of manufacturing system of the full back contacts crystal silicon battery of p-type, the manufacturing system include:
First depositing device, first depositing device are used for the back side in p-type crystalline silicon substrate and form n-type doping film layer；
The front of the p-type crystalline silicon substrate is flannelette；
Laser doping equipment, the laser doping equipment is used to irradiate the setting regions of the n-type doping film layer, to described
The setting regions of p-type crystalline silicon substrate carries out n+ doping, to form multiple n+ that are intervally arranged in the back side of the p-type crystalline silicon substrate
Doped region；
Etching apparatus, the etching apparatus is for removing the n-type doping film layer after laser irradiation；
Second depositing device, second depositing device are used in the p-type crystal silicon lining for removing the n-type doping film layer
The back side and front at bottom deposit passivated reflection reducing membrane respectively；
Metallization machines, the metallization machines on the passivated reflection reducing membrane at the p-type crystalline silicon substrate back side for forming
First electrode and second electrode, and make the first electrode and the n+ doped region Ohmic contact by sintering processes, pass through
The second electrode carries out p+ doping to the interstitial site of the n+ doped region, to form p in the formation p-type crystalline silicon substrate back side
+ doped region.
Preferably, in above-mentioned manufacturing system, first depositing device is chemical vapor depsotition equipment；
Second depositing device is PECVD device.
Preferably, in above-mentioned manufacturing system, the manufacturing system further include:
Cleaning equipment, the cleaning equipment is for cleaning the p-type crystalline silicon substrate of non-making herbs into wool；
Etching device, the etching device are used to carry out making herbs into wool to the front of the p-type crystalline silicon substrate after cleaning.
Preferably, in above-mentioned manufacturing system, the etching device is single-chain type wet chemical etching technique equipment.
Preferably, in above-mentioned manufacturing system, the etching apparatus is slot type cleaning equipment, for being removed using hydrofluoric acid
The n-type doping film layer.
Preferably, in above-mentioned manufacturing system, the laser doping equipment is nanosecond ultraviolet laser device.
Preferably, in above-mentioned manufacturing system, the metallization machines include:
Silk-screen printing device forms multiple alternately rows for the passivated reflection reducing film surface at the p-type crystalline silicon substrate back side
The silver electrode and aluminium electrode of cloth；Wherein, the silver electrode and the n+ doped region at the p-type crystalline silicon substrate back side are oppositely arranged, institute
It states aluminium electrode and the gap of the n+ doped region is oppositely arranged；
Sintering equipment, the sintering equipment is for being sintered, so that the silver electrode and n+ doped region Europe
Nurse contact forms p+ doped region so that aluminium element is diffused into the clearance surface in the aluminium electrode, the aluminium electrode with it is right
Answer the p+ doped region Ohmic contact.
The present invention also provides a kind of production method of the full back contacts crystal silicon battery of p-type, the production method includes:
A p-type crystalline silicon substrate is provided, the front of the p-type crystalline silicon substrate is flannelette；
N-type doping film layer is formed at the back side of the p-type crystalline silicon substrate；
The setting regions that the n-type doping film layer is irradiated by laser doping equipment carries out n+ to the setting regions and mixes
It is miscellaneous, to form multiple n+ doped regions that are intervally arranged in the back side of the p-type crystalline silicon substrate；
Remove the n-type doping film layer after laser irradiation；
Passivated reflection reducing membrane is deposited respectively at the back side and front for removing the p-type crystalline silicon substrate of the n-type doping film layer；
First electrode and second electrode are formed on the passivated reflection reducing membrane at the p-type crystalline silicon substrate back side, and pass through sintering
Processing is so that the first electrode and the n+ doped region Ohmic contact, by the second electrode between the n+ doped region
Gap position carries out p+ doping, to form formation p+ doped region in the p-type crystalline silicon substrate back side.
Preferably, in above-mentioned production method, one p-type crystalline silicon substrate of the offer includes:
The p-type crystalline silicon substrate of non-making herbs into wool is cleaned；
Making herbs into wool is carried out to the front of the p-type crystalline silicon substrate after cleaning.
Preferably, in above-mentioned production method, the production method of the first electrode and the second electrode includes:
Silver electrode is formed in the positive passivated reflection reducing film surface of the p-type crystalline silicon substrate respectively by silk-screen printing technique,
Passivated reflection reducing film surface at the p-type crystalline silicon substrate back side forms aluminium electrode；Wherein, the silver electrode and the p-type crystal silicon
The n+ doped region of substrate back is oppositely arranged, and the aluminium electrode and the gap of the n+ doped region are oppositely arranged；
It is sintered, so that the silver electrode and the n+ doped region Ohmic contact, so that aluminium in the aluminium electrode
In elements diffusion to the clearance surface, p+ doped region, the aluminium electrode and the corresponding p+ doped region Ohmic contact are formed.
As can be seen from the above description, technical solution of the present invention provide the full back contacts crystal silicon battery of p-type production method and
In system, the back for being diffused in the p-type crystalline silicon substrate of the metallic atom of second electrode in laser doping and sintering process is utilized
Face forms multiple n+ doped regions and p+ doped region being arranged alternately, and is not necessarily to multiple exposure mask grooving processes, simplifies the full back contacts of p-type
The fabrication processing of crystal silicon battery reduces manufacture difficulty coefficient and cost of manufacture, is a kind of solar energy of high efficiency, low cost
Battery, convenient for industrialization large-scale application.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of the manufacturing system of the full back contacts crystal silicon battery of p-type provided in an embodiment of the present invention；
Fig. 2 is the structural representation of the manufacturing system of the full back contacts crystal silicon battery of another p-type provided in an embodiment of the present invention
Figure；
Fig. 3-Figure 10 is that a kind of process of the production method of the full back contacts crystal silicon battery of p-type provided in an embodiment of the present invention is shown
It is intended to.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of knot of the manufacturing system of the full back contacts crystal silicon battery of p-type provided in an embodiment of the present invention
Structure schematic diagram, the manufacturing system include: the first depositing device 11, laser doping equipment 12, etching apparatus 13, the second depositing device
14 and metallization machines 15.
First depositing device 11 is used for the back side in p-type crystalline silicon substrate and forms n-type doping film layer；The p-type crystal silicon
The front of substrate is flannelette.First depositing device is chemical vapor depsotition equipment, by chemical vapor deposition process in institute
The back side for stating p-type crystalline silicon substrate forms the N-shaped film layer of one layer of p-doped as the n-type doping film layer, the n-type doping film layer packet
It includes but is not limited to phosphorosilicate glass layer.The thickness of the n-type doping film layer can be 80nm-150nm.
The laser doping equipment 12 is used to irradiate the setting regions of the n-type doping film layer, to the p-type crystalline silicon substrate
Setting regions carry out n+ doping, to form multiple n+ doped regions that are intervally arranged in the back side of the p-type crystalline silicon substrate.It is optional
, the laser doping equipment 12 is nanosecond ultraviolet laser device.It can be brilliant in the p-type by setting laser-irradiated domain
The back side of silicon substrate forms selective n+ doped region.The sheet resistivity of the n+ doped region is 80ohm/sq-120ohm/sq.
The etching apparatus 13 is for removing the n-type doping film layer after laser irradiation；The etching apparatus 13
For slot type cleaning equipment, it is used to remove the n-type doping film layer using hydrofluoric acid.The mass concentration of hydrofluoric acid is 5%-10%,
The removal time is 5min-10min.
Second depositing device 14 be used at the back side for removing the p-type crystalline silicon substrate of the n-type doping film layer and
Front deposits passivated reflection reducing membrane respectively；Second depositing device 14 is PECVD (plasma chemical vapor deposition) equipment.Passivation
The thickness of antireflective film can be 80nm-120nm.The passivated reflection reducing membrane can be silicon nitride film.Distinguished using PECVD device
The back side and front one layer of silicon nitride film of deposition in the p-type crystalline silicon substrate.
The metallization machines 15 be used on the passivated reflection reducing membrane at the p-type crystalline silicon substrate back side formed first electrode and
Second electrode, and make the first electrode and the n+ doped region Ohmic contact by sintering processes, pass through second electricity
P+ doping extremely is carried out to the interstitial site of the n+ doped region, to form formation p+ doped region in the p-type crystalline silicon substrate back side.
The metallization machines 15 include: silk-screen printing device, and the silk-screen printing device is used to serve as a contrast in the p-type crystal silicon
The passivated reflection reducing film surface of bottom back side forms multiple silver electrodes and aluminium electrode being arranged alternately；Wherein, the silver electrode and the p
The n+ doped region at the type crystalline silicon substrate back side is oppositely arranged, and the aluminium electrode and the gap of the n+ doped region are oppositely arranged；Sintering
Device, the sintering equipment is for being sintered, so that the silver electrode and the n+ doped region Ohmic contact, so that institute
It states aluminium element in aluminium electrode to be diffused into the clearance surface, forms p+ doped region, the aluminium electrode is adulterated with the corresponding p+
Area's Ohmic contact.Sintering equipment can be high temperature sintering furnace.
The first electrode can be silver electrode, and the second electrode can be aluminium electrode.Existed using silk-screen printing device
The back up silver metal slurry of the p-type crystalline silicon substrate is dried, and the first electrode is formed.First electrode and n+ doped region
It is oppositely arranged.Using silk-screen printing device the p-type crystalline silicon substrate back up penetrability aluminum metal slurry, as second
Electrode.The rear surface regions that metallic atom in second electrode can be diffused into p-type crystalline silicon substrate in high-temperature sintering process form p
+ doped region.Second electrode will avoid the n+ doped region, and the two does not overlap.When being sintered by sintering equipment, it can wear
Permeability aluminum metal slurry can be directed through passivated reflection reducing membrane, carry out p+ doping to the back side of p-type crystalline silicon substrate, overleaf formed thick
The p+ aluminium doped region that degree is 10 μm -20 μm, while aluminium can also be used as metal electrode transmission carrier, silver paste directly grills thoroughly passivation
Antireflective film forms good ohmic with n+ doped region and contacts.
With reference to Fig. 2, Fig. 2 is the manufacturing system of the full back contacts crystal silicon battery of another p-type provided in an embodiment of the present invention
Structural schematic diagram, on the basis of mode shown in Fig. 1, manufacturing system shown in Fig. 2 further comprises: cleaning equipment 21, the cleaning
Equipment 21 is for cleaning the p-type crystalline silicon substrate of non-making herbs into wool；Etching device 22, the etching device 22 are used for clear
The front of the p-type crystalline silicon substrate after washing carries out making herbs into wool.The etching device 22 can remove positive damaging layer, and realize system
Suede.The cleaning equipment 21 can be ultrasonic cleaning device.The etching device 22 is single-chain type wet chemical etching technique equipment, can
To prepare the flannelette of pyramid structure in the front of p-type crystal silicon by the method for single side chain type wet chemical etching technique, after making herbs into wool, just
Surface resistivity is 1ohm.cm-2ohm.cm, and alkali making herbs into wool can form 44 ° of positive pyramid structures using mature producing line technique
Flannelette.
Manufacturing system described in the embodiment of the present invention is incorporated in p-type crystal silicon using two kinds of technologies of laser doping and penetrability aluminium paste
The back side of substrate forms multiple n+ doped regions and p+ doped region being arranged alternately, and realizes the full back contact structure of p-type, avoids tradition
The multi-step exposure mask and laser technology of diffusion technique realize the full back contacts crystal silicon battery technique simplification of p-type and low cost system
Make, provides a kind of mass production application of p-type high-efficiency battery.
As above-mentioned, the technique of the full back contacts crystal silicon battery of p-type is may be implemented substantially in manufacturing system described in the embodiment of the present invention
Simplify, and greatly reduce cost of manufacture, have compared with prior art following clear advantage and the utility model has the advantages that
1, it is deposited using laser doping and phosphorosilicate glass, solves conventional diffusion technique and form gross area n+ doped layer, need
The problem of this three step process forms selective n+ doped layer is etched using exposure mask-laser-.
2, silicon nitride film is directly being grilled thoroughly using penetrability aluminium paste, is forming p+ doped layer, avoided boron and expand high temperature to n+
The influence of layer solves the problems, such as that p+ adulterates selective doping again；
3, laser doping and penetrability aluminium paste technology combine, the technique for having significantly simplified the full back contacts crystal silicon battery of p-type
Process reduces the complexity and cost of battery preparation.
Based on above-mentioned manufacturing system, another embodiment of the present invention additionally provides a kind of system of full back contacts crystal silicon battery of p-type
Make method, the production method such as Fig. 3, as shown in Fig. 3-Figure 10, Fig. 3-Figure 10 is provided the production method for the embodiment of the present invention
A kind of full back contacts crystal silicon battery of p-type production method flow diagram, which includes:
Step S11: as shown in Figure 3 and Figure 4, a p-type crystalline silicon substrate 31 is provided, the front of the p-type crystalline silicon substrate 31 is
Flannelette.
In the step, firstly, providing the p-type crystalline silicon substrate 31 of a non-making herbs into wool as shown in Figure 3.Then as shown in figure 4, passing through
Process for etching forms flannelette on 31 surface of p-type crystalline silicon substrate.
In the step, one p-type crystalline silicon substrate of the offer includes: to carry out clearly to the p-type crystalline silicon substrate 31 of non-making herbs into wool
It washes；Making herbs into wool is carried out to the front of the p-type crystalline silicon substrate 31 after cleaning.
Step S12: as shown in figure 5, forming n-type doping film layer 32 at the back side of the p-type crystalline silicon substrate 31.
Step S13: as shown in fig. 6, the setting regions of the n-type doping film layer 32 is irradiated by laser doping equipment, it is right
The setting regions of the p-type crystalline silicon substrate 31 carries out n+ doping, to form multiple in the back side of the p-type crystalline silicon substrate 31
Every arrangement n+ doped region 33.
Step S14: as shown in fig. 7, the n-type doping film layer 32 of the removal after laser irradiation.
Step S15: as shown in figure 8, at the back side for removing the p-type crystalline silicon substrate 31 of the n-type doping film layer 32 and
Front deposits passivated reflection reducing membrane 34 and 35 respectively；
Step S16: as shown in Figure 9 and Figure 10, the is formed on the passivated reflection reducing membrane 35 at 31 back side of p-type crystalline silicon substrate
One electrode 36 and second electrode 37, and by sintering processes the first electrode 36 is connect for 33 ohm with the n+ doped region
Touching carries out p+ doping by interstitial site of the second electrode 37 to the n+ doped region 33, to form p-type crystalline silicon substrate
P+ doped region 38 is formed in 31 back sides.
In the production method, the production method of the first electrode and the second electrode includes: by screen printing dataller
Skill forms silver electrode in the positive passivated reflection reducing film surface of the p-type crystalline silicon substrate respectively, at the p-type crystalline silicon substrate back side
Passivated reflection reducing film surface forms aluminium electrode；Wherein, the silver electrode is opposite with the n+ doped region at the p-type crystalline silicon substrate back side sets
It sets, the aluminium electrode and the gap of the n+ doped region are oppositely arranged；It is sintered, so that the silver electrode and the n+
Doped region Ohmic contact forms p+ doped region, the aluminium so that aluminium element is diffused into the clearance surface in the aluminium electrode
Electrode and the corresponding p+ doped region Ohmic contact.
Production method described in the embodiment of the present invention is overleaf respectively formed n+ and p+ using laser doping and penetrability aluminium paste
Doped layer, battery preparation is the following steps are included: making herbs into wool, phosphorosilicate glass deposition, laser doping and cleaning, two-sided silicon nitride film are sunk
Product, silver paste printing and drying, aluminium paste printing, sintering.The manufacturing system it can realize the production side through the foregoing embodiment
Method, each processing step specifically tries under type can describe with reference to above-described embodiment, and details are not described herein.
The problems such as although traditional IBC battery can solve the shading of crystal silicon cell front, Metal contact regions are compound big, but
Its preparation process generallys use the techniques such as diffusion, multiple exposure mask, laser slotting twice, and process up to twenty or thirty walks, preparation cost
It is excessively high, never by industrialization large-scale application.
Laser doping and burn-through resistance aluminium paste are innovatively applied to the preparation work of the full back contacts crystal silicon battery of p-type by the present invention
In skill, the preparation section of IBC battery is reduced to 6 steps, substantially reduces the manufacturing process of battery, reduces being produced into for battery
This, convenient for carrying on the back battery large-scale application entirely for p-type.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For method disclosed in embodiment
For, since it is corresponding with system disclosed in embodiment, so being described relatively simple, related place is defended oneself referring to Account Dept
It is bright.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of manufacturing system of the full back contacts crystal silicon battery of p-type, which is characterized in that the manufacturing system includes:
First depositing device, first depositing device are used for the back side in p-type crystalline silicon substrate and form n-type doping film layer；The p
The front of type crystalline silicon substrate is flannelette；
Laser doping equipment, the laser doping equipment is used to irradiate the setting regions of the n-type doping film layer, to the p-type
The setting regions of crystalline silicon substrate carries out n+ doping, is mixed with forming multiple n+ that are intervally arranged in the back side of the p-type crystalline silicon substrate
Miscellaneous area；
Etching apparatus, the etching apparatus is for removing the n-type doping film layer after laser irradiation；
Second depositing device, second depositing device are used to remove the p-type crystalline silicon substrate of the n-type doping film layer
The back side and front deposit passivated reflection reducing membrane respectively；
Metallization machines, the metallization machines are for forming first on the passivated reflection reducing membrane at the p-type crystalline silicon substrate back side
Electrode and second electrode, and make the first electrode and the n+ doped region Ohmic contact by sintering processes, by described
Second electrode carries out p+ doping to the interstitial site of the n+ doped region, is mixed with forming p+ in the formation p-type crystalline silicon substrate back side
Miscellaneous area.
2. manufacturing system according to claim 1, which is characterized in that first depositing device sets for chemical vapor deposition
It is standby；
Second depositing device is PECVD device.
3. manufacturing system according to claim 1, which is characterized in that the manufacturing system further include:
Cleaning equipment, the cleaning equipment is for cleaning the p-type crystalline silicon substrate of non-making herbs into wool；
Etching device, the etching device are used to carry out making herbs into wool to the front of the p-type crystalline silicon substrate after cleaning.
4. manufacturing system according to claim 3, which is characterized in that the etching device is single-chain type wet chemical etching technique
Equipment.
5. manufacturing system according to claim 1, which is characterized in that the etching apparatus is slot type cleaning equipment, is used for
The n-type doping film layer is removed using hydrofluoric acid.
6. manufacturing system according to claim 1, which is characterized in that the laser doping equipment is that nanosecond ultraviolet laser is set
It is standby.
7. manufacturing system according to claim 1-6, which is characterized in that the metallization machines include:
Silk-screen printing device forms multiple be arranged alternately for passivated reflection reducing film surface at the p-type crystalline silicon substrate back side
Silver electrode and aluminium electrode；Wherein, the silver electrode and the n+ doped region at the p-type crystalline silicon substrate back side are oppositely arranged, the aluminium
The gap of electrode and the n+ doped region is oppositely arranged；
Sintering equipment, the sintering equipment is for being sintered, so that the silver electrode connects with described n+ doped region ohm
Touching forms p+ doped region so that aluminium element is diffused into the clearance surface in the aluminium electrode, the aluminium electrode and corresponding institute
State p+ doped region Ohmic contact.
8. a kind of production method of the full back contacts crystal silicon battery of p-type, which is characterized in that the production method includes:
A p-type crystalline silicon substrate is provided, the front of the p-type crystalline silicon substrate is flannelette；
N-type doping film layer is formed at the back side of the p-type crystalline silicon substrate；
The setting regions that the n-type doping film layer is irradiated by laser doping equipment carries out n+ doping to the setting regions, with
Multiple n+ doped regions that are intervally arranged are formed in the back side of the p-type crystalline silicon substrate；
Remove the n-type doping film layer after laser irradiation；
Passivated reflection reducing membrane is deposited respectively at the back side and front for removing the p-type crystalline silicon substrate of the n-type doping film layer；
First electrode and second electrode are formed on the passivated reflection reducing membrane at the p-type crystalline silicon substrate back side, and pass through sintering processes
So that the first electrode and the n+ doped region Ohmic contact, by the second electrode to the gap digit of the n+ doped region
It sets and carries out p+ doping, to form formation p+ doped region in the p-type crystalline silicon substrate back side.
9. production method according to claim 8, which is characterized in that one p-type crystalline silicon substrate of the offer includes:
The p-type crystalline silicon substrate of non-making herbs into wool is cleaned；
Making herbs into wool is carried out to the front of the p-type crystalline silicon substrate after cleaning.
10. production method according to claim 8 or claim 9, which is characterized in that the first electrode and the second electrode
Production method includes:
Silver electrode is formed in the positive passivated reflection reducing film surface of the p-type crystalline silicon substrate respectively by silk-screen printing technique, in institute
The passivated reflection reducing film surface for stating the p-type crystalline silicon substrate back side forms aluminium electrode；Wherein, the silver electrode and the p-type crystalline silicon substrate
The n+ doped region at the back side is oppositely arranged, and the aluminium electrode and the gap of the n+ doped region are oppositely arranged；
It is sintered, so that the silver electrode and the n+ doped region Ohmic contact, so that aluminium element in the aluminium electrode
It is diffused into the clearance surface, forms p+ doped region, the aluminium electrode and the corresponding p+ doped region Ohmic contact.
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