CN109979799A - The Degumming method of semiconductor wafer - Google Patents
The Degumming method of semiconductor wafer Download PDFInfo
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- CN109979799A CN109979799A CN201711445155.6A CN201711445155A CN109979799A CN 109979799 A CN109979799 A CN 109979799A CN 201711445155 A CN201711445155 A CN 201711445155A CN 109979799 A CN109979799 A CN 109979799A
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- semiconductor wafer
- ultrasonic cleaning
- degumming
- degumming method
- cleaning
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 32
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims abstract description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 18
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 239000012459 cleaning agent Substances 0.000 claims abstract description 10
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 9
- 235000019441 ethanol Nutrition 0.000 claims abstract description 9
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229960004889 salicylic acid Drugs 0.000 claims abstract description 9
- 235000019795 sodium metasilicate Nutrition 0.000 claims abstract description 9
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 9
- LMHAGAHDHRQIMB-UHFFFAOYSA-N 1,2-dichloro-1,2,3,3,4,4-hexafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(Cl)C1(F)Cl LMHAGAHDHRQIMB-UHFFFAOYSA-N 0.000 claims abstract description 8
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims abstract description 8
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000000176 sodium gluconate Substances 0.000 claims abstract description 8
- 229940005574 sodium gluconate Drugs 0.000 claims abstract description 8
- 235000012207 sodium gluconate Nutrition 0.000 claims abstract description 8
- 239000004094 surface-active agent Substances 0.000 claims abstract description 8
- 229960002415 trichloroethylene Drugs 0.000 claims abstract description 8
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims abstract description 8
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 5
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 5
- 239000007921 spray Substances 0.000 claims description 6
- 230000002000 scavenging effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- BPMFZUMJYQTVII-UHFFFAOYSA-N guanidinoacetic acid Chemical compound NC(=N)NCC(O)=O BPMFZUMJYQTVII-UHFFFAOYSA-N 0.000 claims 2
- 239000000084 colloidal system Substances 0.000 abstract description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- UPMFZISCCZSDND-JJKGCWMISA-M sodium gluconate Chemical compound [Na+].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O UPMFZISCCZSDND-JJKGCWMISA-M 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
- C11D1/721—End blocked ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/201—Monohydric alcohols linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/2017—Monohydric alcohols branched
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/365—Organic compounds containing phosphorus containing carboxyl groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
The Degumming method of semiconductor wafer of the invention, comprising: first time ultrasonic cleaning: the semiconductor wafer is placed in the warm water with surfactant and carries out ultrasonic cleaning；Impregnate degumming: the semiconductor wafer being placed in the cleaning agent including following weight percent composition and is impregnated: octyl phenol polyoxyethylene ether 8-12%, salicylic acid 2-5%, acetamide 2-5%, 2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-10%, sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, trichloro ethylene 3-9%, surplus are deionized water；And second of ultrasonic cleaning: the semiconductor wafer is placed in deionized water and carries out ultrasonic cleaning.This method can efficiently remove the colloid of semiconductor die on piece, guarantee that semiconductor wafer surface without flower piece, chipping, notch etc., improves the yield rate of semiconductor wafer.
Description
Technical field
The present invention relates to semiconductor wafer field more particularly to a kind of Degumming methods of semiconductor wafer.
Background technique
Semiconductor monocrystal silicon processing technique is developed rapidly in recent years, by circle cutting technique development (outer) in initial
For the multi-wire cutting technology generallyd use at present.Traditional degumming tech is usually after dicing, it is therefore an objective to remove glue above
And cutting fluid, this degumming tech are generally manual operation, technical process is to be immersed in chip in 35 DEG C of hot water storgae, when immersion
Between be 60min.But in general, manual operation is difficult to standardize, random strong, surface washing not will lead to degumming rear surface flower completely
Piece, impregnating insufficient degumming will lead to chipping sliver etc., while different degrees of destruction is caused to wafer surface and integrality, warp
Often result in sliver, chipping, the contamination etc. of later process.Therefore degumming tech becomes the bottleneck of limitation production capacity and product quality.Cause
This, it would be highly desirable to provide it is a kind of it is practical remove photoresist technology to reduce fraction defective, reduce semiconductor wafer surface impurity contamination, improve yield.
Summary of the invention
The purpose of the present invention is to provide a kind of Degumming methods of semiconductor wafer, can efficiently remove semiconductor die on piece
Colloid, guarantee semiconductor wafer surface without flower piece, chipping, notch etc., improve the yield rate of semiconductor wafer.
To achieve the above object, the Degumming method of semiconductor wafer of the invention, comprising the following steps:
First time ultrasonic cleaning: it is clear that the semiconductor wafer is placed in progress ultrasonic wave in the warm water with surfactant
It washes；
It impregnates degumming: the semiconductor wafer being placed in the cleaning agent including following weight percent composition and is impregnated: is pungent
Base phenol polyethenoxy ether 8-12%, salicylic acid 2-5%, acetamide 2-5%, 2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-
10%, sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, trichloro ethylene 3-9%, surplus are deionized water；And
Second of ultrasonic cleaning: the semiconductor wafer is placed in deionized water and carries out ultrasonic cleaning.
Compared with prior art, the Degumming method of semiconductor wafer of the invention is carried out using special detergent except glue,
And combine twice ultrasonic wave to clean, can efficiently remove the colloid of semiconductor die on piece, guarantee semiconductor wafer surface without flower piece, collapse
Side, notch etc. improve the yield rate of semiconductor wafer.
Preferably, further including prerinse before carrying out first time ultrasonic cleaning: using deionization water cleaning semiconductor
Chip.
Preferably, after carrying out first time ultrasonic cleaning and before impregnating degumming, further includes: to the semiconductor die
Piece carries out hot water spray.
Preferably, the volume ratio of the surfactant in water is 1-2% in first time ultrasonic cleaning.
Preferably, in first time ultrasonic cleaning and second of ultrasonic cleaning, supersonic frequency 45KHz-655KHz,
Water temperature is 50-60 DEG C, scavenging period 600-900s.
Preferably, after carrying out second of ultrasonic cleaning further include: take out and dry up semiconductor wafer.
Preferably, the cleaning agent includes following weight percent composition: octyl phenol polyoxyethylene ether in impregnating degumming
10%, salicylic acid 4%, acetamide 4%, 2- hydroxyphosphonoacetic acid 6%, sodium metasilicate 7%, sodium gluconate 5.5%, ethyl alcohol
8%, isopropanol 4%, trichloro ethylene 7%, surplus are deionized water.
Specific embodiment
It is described further, but is not so limited below with reference to Degumming method of the embodiment to semiconductor wafer of the invention
The present invention.
One embodiment of the Degumming method of semiconductor wafer of the invention the following steps are included:
First time ultrasonic cleaning: it is clear that the semiconductor wafer is placed in progress ultrasonic wave in the warm water with surfactant
It washes；
It impregnates degumming: the semiconductor wafer being placed in the cleaning agent including following weight percent composition and is impregnated: is pungent
Base phenol polyethenoxy ether 8-12%, salicylic acid 2-5%, acetamide 2-5%, 2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-
10%, sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, trichloro ethylene 3-9%, surplus are deionized water；And
Second of ultrasonic cleaning: the semiconductor wafer is placed in deionized water and carries out ultrasonic cleaning.
Preferably, a preferred embodiment of the Degumming method of semiconductor wafer of the invention the following steps are included:
Prerinse: semiconductor wafer is cleaned using deionized water；
First time ultrasonic cleaning: it is clear that the semiconductor wafer is placed in progress ultrasonic wave in the warm water with surfactant
It washes；
Spray: hot water spray is carried out to the semiconductor wafer；
It impregnates degumming: the semiconductor wafer being placed in the cleaning agent including following weight percent composition and is impregnated: is pungent
Base phenol polyethenoxy ether 8-12%, salicylic acid 2-5%, acetamide 2-5%, 2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-
10%, sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, trichloro ethylene 3-9%, surplus are deionized water；
Second of ultrasonic cleaning: the semiconductor wafer is placed in deionized water and carries out ultrasonic cleaning；And
Drying: semiconductor wafer is taken out and is dried up.
Specifically, in prerinse, place the wafer in the rinse bath for fill deionized water using carry out prerinse, with
Remove the mortar of wafer surface.Preferably, temperature is 50-60 DEG C, the time is 20 minutes.
In first time ultrasonic cleaning, impregnated using the mixed liquor of surfactant and water, wherein surface-active
The volume ratio of agent is 1-2%.Supersonic frequency is 45KHz-655KHz, and water temperature is 50-60 DEG C, scavenging period 600-900s.It is logical
First time ultrasonic cleaning is crossed, can remove the residue between wafer slit.
Then, hot water spray is carried out to semiconductor wafer, for example, carrying out reciprocal spray time 600s-700s, oscillation cycle
90s-100s, water temperature control is at 50-60 DEG C, hydraulic pressure 0.8MPa-1.2MPa.
Impregnate degumming in, cleaning agent are as follows: octyl phenol polyoxyethylene ether 8-12%, salicylic acid 2-5%, acetamide 2-5%,
2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-10%, sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, three
Vinyl chloride 3-9%, surplus are deionized water.In a preferred embodiment, cleaning agent includes following weight percent composition: pungent
Base phenol polyethenoxy ether 10%, salicylic acid 4%, acetamide 4%, 2- hydroxyphosphonoacetic acid 6%, sodium metasilicate 7%, gluconic acid
Sodium 5.5%, ethyl alcohol 8%, isopropanol 4%, trichloro ethylene 7%, surplus are deionized water.By in 65-75 DEG C of cleaning agent
It is impregnated, the colloid of semiconductor die on piece can be effectively removed.
Then, it carries out second of ultrasonic cleaning: the semiconductor wafer being placed in deionized water and carries out ultrasonic cleaning,
Supersonic frequency is 45KHz-655KHz, and water temperature is 50-60 DEG C, scavenging period 600-900s, further to clean on chip
Impurity.
Finally, taking out chip when water temperature drops to 30 DEG C or so, being dried up with air gun.
Compared with prior art, the Degumming method of semiconductor wafer of the invention is carried out using special detergent except glue,
And combine twice ultrasonic wave to clean, can efficiently remove the colloid of semiconductor die on piece, guarantee semiconductor wafer surface without flower piece, collapse
Side, notch etc. improve the yield rate of semiconductor wafer.
Above disclosed is only presently preferred embodiments of the present invention, cannot limit the right of the present invention with this certainly
Range, therefore according to equivalent variations made by scope of the present invention patent, it is still within the scope of the present invention.
Claims (7)
1. a kind of Degumming method of semiconductor wafer, comprising the following steps:
First time ultrasonic cleaning: the semiconductor wafer is placed in the warm water with surfactant and carries out ultrasonic cleaning；
It impregnates degumming: the semiconductor wafer being placed in the cleaning agent including following weight percent composition and is impregnated: octyl phenol
Polyoxyethylene ether 8-12%, salicylic acid 2-5%, acetamide 2-5%, 2- hydroxyphosphonoacetic acid 4-8%, sodium metasilicate 5-10%,
Sodium gluconate 4-6%, ethyl alcohol 6-10%, isopropanol 2-6%, trichloro ethylene 3-9%, surplus are deionized water；And
Second of ultrasonic cleaning: the semiconductor wafer is placed in deionized water and carries out ultrasonic cleaning.
2. the Degumming method of semiconductor wafer as described in claim 1, it is characterised in that: carrying out first time ultrasonic cleaning
Before, further include prerinse: semiconductor wafer is cleaned using deionized water.
3. the Degumming method of semiconductor wafer as described in claim 1, it is characterised in that: carrying out first time ultrasonic cleaning
Later and before impregnating degumming, further includes: carry out hot water spray to the semiconductor wafer.
4. the Degumming method of semiconductor wafer as described in claim 1, it is characterised in that: in first time ultrasonic cleaning,
The volume ratio of the surfactant in water is 1-2%.
5. the Degumming method of semiconductor wafer as described in claim 1, it is characterised in that: in first time ultrasonic cleaning and
In the cleaning of twice ultrasonic wave, supersonic frequency 45KHz-655KHz, water temperature is 50-60 DEG C, scavenging period 600-900s.
6. the Degumming method of semiconductor wafer as claimed in claim 4, it is characterised in that: carrying out second of ultrasonic cleaning
Later further include: semiconductor wafer is taken out and dried up.
7. the Degumming method of semiconductor wafer as described in claim 1, it is characterised in that: in impregnating degumming, the cleaning
Agent includes following weight percent composition: octyl phenol polyoxyethylene ether 10%, salicylic acid 4%, acetamide 4%, 2- hydroxy phosphinylidyne
Guanidine-acetic acid 6%, sodium metasilicate 7%, sodium gluconate 5.5%, ethyl alcohol 8%, isopropanol 4%, trichloro ethylene 7%, surplus be go from
Sub- water.
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| CN201711445155.6A CN109979799A (en) | 2017-12-27 | 2017-12-27 | The Degumming method of semiconductor wafer |
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| CN201711445155.6A CN109979799A (en) | 2017-12-27 | 2017-12-27 | The Degumming method of semiconductor wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111014161A (en) * | 2019-12-09 | 2020-04-17 | 东莞市日和自动化设备有限公司 | Tray degumming and arranging process |
| CN112934829A (en) * | 2019-11-26 | 2021-06-11 | 东莞新科技术研究开发有限公司 | Cleaning method of semiconductor clamp |
| CN114887990A (en) * | 2022-05-13 | 2022-08-12 | 安徽光智科技有限公司 | Ultrasonic cleaning process for cemented lens |
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