CN109930123A - A kind of magnetic control sputtering device - Google Patents
A kind of magnetic control sputtering device Download PDFInfo
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- CN109930123A CN109930123A CN201910276476.0A CN201910276476A CN109930123A CN 109930123 A CN109930123 A CN 109930123A CN 201910276476 A CN201910276476 A CN 201910276476A CN 109930123 A CN109930123 A CN 109930123A
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- magnetic
- magnet
- coil
- control sputtering
- sputtering device
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 35
- 230000033001 locomotion Effects 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012789 electroconductive film Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
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- 230000001133 acceleration Effects 0.000 description 1
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- 150000001768 cations Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of magnetic control sputtering devices.Magnetic control sputtering device includes backboard, magnet and subtracts magnetic device.Wherein the magnet is set to the backboard side, and a line that the magnet is parallel to the backboard in the vertical projection face of the backboard does round trip cycle movement；The magnetic device that subtracts is set to the backboard towards on the surface of the magnet；Subtracting magnetic device described in wherein includes coil group and control unit.Magnetic control sputtering device generates secondary magnetic field by the induced current and then magnetic field that the coil subtracted in magnetic device cuts the magnet generates induced current, to offset the magnetic field strength of the magnet, corrasion of the plasma to target is reduced, to avoid the utilization rate of target waste increase target.Magnetic control sputtering device provided by the invention avoids frequently replacement target, the mobility of magnetic control sputtering device is improved, to reduce production cost.
Description
Technical field
The present invention relates to one kind that semi-conductor processing equipment field more particularly to physical vapour deposition (PVD) stage therein use
Magnetic control sputtering device.
Background technique
PVD (full name in English: Physical Vapor Deposition, physical vapour deposition (PVD)), which refers to, utilizes physical process
Realize substance transfer, process atom or molecule being transferred to by source on substrate surface.Its effect is can to make certain have spy
The particle of different performance (intensity height, wearability, thermal diffusivity, rotproofness etc.) is sprayed on the lower parent of performance, so that parent has
There is better performance.PVD basic skills: it is evaporated in vacuo, sputtering, ion plating (hallow cathode deposition, HCD, hot cathode ion plating, electricity
Arc ion plating, activated reactive evaporation, RF ion plating, direct-current discharge ion plating).
Magnetron sputtering is one of physical vapour deposition (PVD).General sputtering method can be used for preparing metal, semiconductor, absolutely
More materials such as edge body, and have many advantages, such as that equipment is simple, easily controllable, plated film area is big and adhesive force is strong, and magnetron sputtering method
It effectively overcomes that cathodic sputtering rate is low and electronics makes the raised weakness of substrate temperature, thus obtains rapid development and extensively
Using.
The working principle of magnetron sputtering refers to electronics under the action of electric field E, sends out during flying to substrate with ar atmo
Raw collision, makes its ionization produce Ar cation and new electronics；New electronics flies to substrate, and Ar ion accelerates under electric field action
Cathode target is flown to, and target surface is bombarded with high-energy, sputters target.In sputtering particle, neutral target atom or point
Son, which is deposited on substrate, forms film, and the secondary electron generated will receive electric and magnetic fields effect, generates E (electric field) × B (magnetic
) signified direction drift, abbreviation E × B drift, motion profile is similar to a cycloid.If toroidal magnetic field, then electronics is just
It is moved in a circle in the form of approximate cycloid on target surface, their motion path is not only very long, but also is bound in by near target table
In the heating region in face, and a large amount of Ar is ionized in this region and bombards target, to realize high deposition
Rate.With the increase of collision frequency, the energy consumption of secondary electron totally, is gradually distance from target surface, and in the effect of electric field E
Under be eventually deposited on substrate.Since the energy of the electronics is very low, pass to the energy very little of substrate, cause substrate temperature rise compared with
It is low.
Wherein magnetron sputtering is the collision process of incoming particle and target.Incoming particle undergoes complicated scattering in target
Part momentum, is transmitted to target atom by journey and target atom collision, this target atom is collided with other target atoms again, forms cascade process.
Target atom in this cascade process near certain surfaces obtains the enough momentum moved out, leaves target and is sputtered out.
Magnetron sputtering technique is widely used to semiconductor, FPD industry at present, and existing flat target uses magnet
The sputtering mode that opposite target moves back and forth causes target unevenly to etch due to magnet acceleration and deceleration motion, produces in target material surface
Raw runway connected in star, keeps target utilization low, and the target utilization of general plane target material magnetic sputtering device is no more than 40%,
And frequently change target and lead to the reduction of equipment mobility, make that the production cost increases.Therefore need to seek a kind of novel magnetron sputtering dress
It sets to improve the above problem.
Summary of the invention
It is an object of the present invention to provide a kind of magnetic control sputtering devices, are able to solve current magnetic control sputtering device
The problems such as utilization rate is low, high production cost.
To solve the above-mentioned problems, the present invention provides a kind of magnetic control sputtering device, including: backboard, magnet and
Subtract magnetic device.Wherein the magnetic that subtracts is set to the backboard side, and the magnet is parallel in the vertical projection face of the backboard
Round trip cycle movement is done in a line of the backboard；The magnetic device that subtracts is set to the backboard towards the surface of the magnet
On；The magnetic device that subtracts includes coil group and control unit, wherein the coil group includes two coils, wherein the coil is logical
It crosses and cuts the magnetic field of magnets generation induced current and then generate secondary magnetic field；Described control unit is connected and controls with the coil
The opening and closing of the coil is made, and then controls the intensity of the secondary magnetic field.
Further, wherein the magnetic device that subtracts further includes load, the load is connect with described control unit.
Further, wherein described subtract magnetic device and only include one group of coil group, described two lines that the coil group includes
The position of circle corresponds respectively to two marginal positions of the magnet round trip cycle movement.
Further, wherein the magnetic device that subtracts includes 2 groups or more quantity coil groups, two coils of every group of coil group
Two marginal positions that position corresponds respectively to the magnet round trip cycle movement are set.
Further, wherein be arranged at two marginal positions corresponding to the movement of magnet round trip cycle 2 or with
The coil of upper quantity is arranged in parallel.
Further, wherein the material of the coil is conductor.
Further, wherein the conductor includes one of aluminium, magnesium, potassium, copper, graphene or a variety of.
Further, wherein the coil is made of conductive filament or conducting wire.
Further, wherein the conducting wire is formed by conductor thin film by patterned process, etching.
Further, wherein the conductor thin film is indium tin oxide films.
The invention has the advantages that the present invention relates to a kind of magnetic control sputtering device, by the backboard towards the magnet
Surface on setting subtract magnetic device, by the coil subtracted in magnetic device cut the magnet magnetic field generate induced current so that lead to
It crosses the induced current and generates secondary magnetic field, to offset the magnetic field strength of the magnet, reduce plasma to the etching of target
Effect, to avoid the utilization rate of target waste increase target.Magnetic control sputtering device provided by the invention avoids frequent replacement
Target, improves the mobility of magnetic control sputtering device, to reduce production cost.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram of magnetic control sputtering device of the present invention.
Fig. 2 is the bottom view of magnetic control sputtering device embodiment 1 of the present invention.
Fig. 3 is the bottom view of magnetic control sputtering device embodiment 2 of the present invention.
Component mark is as follows in figure:
1, backboard 2, magnet
3, subtract magnetic device 31, coil group
32, control unit 33, load
Specific embodiment
Below in conjunction with Figure of description, the preferred embodiments of the present invention are described in detail, with complete to those of skill in the art
It is whole to introduce technology contents of the invention, prove that the present invention can be implemented with citing, so that technology contents disclosed by the invention are more
It is clear, so that will more readily understand how implement the present invention by those skilled in the art.However the present invention can pass through many differences
The embodiment of form emerges from, and protection scope of the present invention is not limited only to the embodiment mentioned in text, Examples below
The range that is not intended to limit the invention of explanation.
The direction term that the present invention is previously mentioned, for example, "upper", "lower", "front", "rear", "left", "right", "inner", "outside", "
Side " etc. is only the direction in attached drawing, and direction term used herein is of the invention for explanation and illustration, rather than is used
To limit the scope of protection of the present invention.
In the accompanying drawings, the identical component of structure is indicated with same numbers label, everywhere the similar component of structure or function with
Like numeral label indicates.In addition, in order to facilitate understanding and description, the size and thickness of each component shown in the drawings are any
It shows, the present invention does not limit the size and thickness of each component.
When certain components, when being described as " " another component "upper", the component can be placed directly within described another group
On part；There may also be an intermediate module, the component is placed on the intermediate module, and the intermediate module is placed in another group
On part.When a component is described as " installation is extremely " or " being connected to " another component, the two can be understood as direct " installation "
Or " connection " or a component pass through an intermediate module " installation is extremely " or " being connected to " another component.
Embodiment 1
As shown in Figure 1, magnetic control sputtering device includes: backboard 1, magnet 2 and subtracts magnetic device 3.Wherein the magnet 2 is arranged
In 1 side of backboard, a line that the magnet 2 is parallel to the backboard 1 in the vertical projection face of the backboard 1 is done past
Return periodic motion；The magnetic device 3 that subtracts is set to the backboard 1 towards on the surface of the magnet 2.
As shown in Fig. 2, subtracting magnetic device 3 described in wherein only includes one group of coil group 31 and control unit 32, wherein the line
Circle group 31 includes two coils, and it is past that the position for described two coils that the coil group 31 includes corresponds respectively to the magnet 2
Return two marginal positions of periodic motion.Wherein it is arranged at two marginal positions corresponding to the movement of 2 round trip cycle of magnet
2 coils be parallel to each other.Wherein the coil can be passed through by cutting the magnetic field generation induced current of the magnet 2
The induced current generates secondary magnetic field, to offset the magnetic field strength of the magnet 2；Wherein described control unit 32 is connected to
One end of the coil group 31, described control unit 32 controls the opening and closing of the coil, and then controls the strong of the secondary magnetic field
Degree.
Wherein the material of the coil is conductor.Conductor can be metallic conductor, be also possible to the non-of conductive energy
Metallic conductor.Preferably, one of aluminium, magnesium, potassium, copper, graphene or a variety of be can choose.Since metallic conduction performance is good,
Thus cutting magnetic field generate electric current, electric current generate secondary magnetic field, offset magnet 2 magnetic field effect it is obvious, thus reduce etc. from
Corrasion of the son to target, to avoid the utilization rate of target waste increase target.
Wherein the coil can be made of conductive filament, can also be made of conducting wire.Conducting wire passes through pattern by conductor thin film
Change processing, etching are formed.Since in oxide electroconductive film, the electric conductivity of indium tin oxide films is best, it is therefore preferable that
Conducting wire is prepared using indium tin oxide films.
As shown in Fig. 2, the magnetic device 3 that subtracts further includes load 33, the load 33 is connected in described control unit 32,
The induction electric energy that the 33 consumption coil of load generates, can reduce coil heating amount, thus avoid the excessively high aging of coil temperature, burning
It is bad, coil service life is improved, it is final to improve the service life for subtracting magnetic device 3.
Embodiment 2
Only the different place between the present embodiment and embodiment 1 is illustrated below, and its something in common is then herein not
It repeats again.
As shown in figure 3, wherein the magnetic device 3 that subtracts includes at least two groups coil group 31 and control unit 32, wherein described
Coil group 31 includes two coils, and two coils setting position of every group of coil group 31 corresponds respectively to the magnet 2
Two marginal positions of round trip cycle movement.Wherein set at two marginal positions corresponding to the movement of 2 round trip cycle of magnet
The coil for 2 or more the quantity set is parallel to each other.The wherein coil is arranged can be generated by cutting the magnetic field of the magnet 2
Induced current generates secondary magnetic field by the induced current in turn, to offset the magnetic field strength of the magnet 2；It is wherein described
Control unit 32 is connected to one end of the coil group 31, and described control unit 32 controls the opening and closing of the coil, and then controls
The intensity of the secondary magnetic field.
Wherein the material of the coil is conductor.Conductor can be metallic conductor, be also possible to the non-of conductive energy
Metallic conductor.Preferably, one of aluminium, magnesium, potassium, copper, graphene or a variety of be can choose.Since metallic conduction performance is good,
Thus cutting magnetic field generate electric current, electric current generate secondary magnetic field, offset magnet 2 magnetic field effect it is obvious, thus reduce etc. from
Corrasion of the son to target, to avoid the utilization rate of target waste increase target.
Wherein the coil can be made of conductive filament, can also be made of conducting wire.Conducting wire passes through pattern by conductor thin film
Change processing, etching are formed.Since in oxide electroconductive film, the electric conductivity of indium tin oxide films is best, it is therefore preferable that
Conducting wire is prepared using indium tin oxide films.
As shown in figure 3, the magnetic device 3 that subtracts further includes load 33, the load 33 is connected in described control unit 32,
The induction electric energy that the 33 consumption coil of load generates, can reduce coil heating amount, thus avoid the excessively high aging of coil temperature, burning
It is bad, coil service life is improved, it is final to improve the service life for subtracting magnetic device 3.
Magnetic control sputtering device provided by the present invention is described in detail above.It should be understood that example as described herein
Property embodiment should be to be considered only as descriptive, be used to help understand method and its core concept of the invention, and and do not have to
In the limitation present invention.The description of features or aspect should be usually considered in each illustrative embodiments and shown suitable for other
Similar features or aspects in example property embodiment.Although reference example embodiment describes the present invention, it can suggest affiliated neck
The technical staff in domain carries out various change and change.The invention is intended to cover these variations in the scope of the appended claims
And change, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention, it should be included in this
Within the protection scope of invention.
Claims (10)
1. a kind of magnetic control sputtering device characterized by comprising
Backboard；
Magnet, the magnet are set to the backboard side, and the magnet is parallel to institute in the vertical projection face of the backboard
The a line for stating backboard does round trip cycle movement；
Subtract magnetic device, the magnetic device that subtracts is set to the backboard towards on the surface of the magnet；
The magnetic device that subtracts includes:
Coil group, the coil group include two coils, wherein the coil generates induced electricity by cutting the magnetic field of magnets
It flows into and generates secondary magnetic field；And
Control unit, described control unit is connected with the coil and controls the opening and closing of the coil, and then controls described secondary
The intensity in magnetic field.
2. magnetic control sputtering device according to claim 1, which is characterized in that the magnetic device that subtracts further includes load, described
Load is connect with described control unit.
3. magnetic control sputtering device according to claim 1, which is characterized in that the magnetic device that subtracts only includes one group of coil
Group, the position for described two coils that the coil group includes correspond respectively to two edges of the magnet round trip cycle movement
Position.
4. magnetic control sputtering device according to claim 1, which is characterized in that the magnetic device that subtracts includes 2 groups or more numbers
Coil group is measured, the setting position of two coils of every group of coil group corresponds respectively to two of the magnet round trip cycle movement
Marginal position.
5. magnetic control sputtering device according to claim 3 or 4, which is characterized in that the magnet round trip cycle that corresponds to is transported
The coil for 2 or more quantity being arranged at two dynamic marginal positions is arranged in parallel.
6. magnetic control sputtering device according to claim 1, which is characterized in that the material of the coil is conductor.
7. magnetic control sputtering device according to claim 6, which is characterized in that the conductor includes aluminium, magnesium, potassium, copper, graphite
One of alkene is a variety of.
8. magnetic control sputtering device according to claim 1, which is characterized in that the coil is made of conductive filament or conducting wire.
9. magnetic control sputtering device according to claim 8, which is characterized in that the conducting wire is by conductor thin film by patterning
Processing, etching are formed.
10. magnetic control sputtering device according to claim 9, which is characterized in that the conductor thin film is indium tin oxide films.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910276476.0A CN109930123A (en) | 2019-04-08 | 2019-04-08 | A kind of magnetic control sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910276476.0A CN109930123A (en) | 2019-04-08 | 2019-04-08 | A kind of magnetic control sputtering device |
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| Publication Number | Publication Date |
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| CN109930123A true CN109930123A (en) | 2019-06-25 |
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ID=66989487
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| CN201910276476.0A Pending CN109930123A (en) | 2019-04-08 | 2019-04-08 | A kind of magnetic control sputtering device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111910162A (en) * | 2020-08-05 | 2020-11-10 | Tcl华星光电技术有限公司 | Magnetron sputtering device and method |
| CN114107920A (en) * | 2021-10-15 | 2022-03-01 | 万津实业(赤壁)有限公司 | Sputtering coating device |
| CN114351100A (en) * | 2021-12-10 | 2022-04-15 | 万津实业(赤壁)有限公司 | Color difference preventing antireflection film coating equipment |
| CN114606472A (en) * | 2022-01-17 | 2022-06-10 | 万津实业(赤壁)有限公司 | Coated workpiece bearing device and drum-type coating machine |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111910162A (en) * | 2020-08-05 | 2020-11-10 | Tcl华星光电技术有限公司 | Magnetron sputtering device and method |
| CN114107920A (en) * | 2021-10-15 | 2022-03-01 | 万津实业(赤壁)有限公司 | Sputtering coating device |
| CN114107920B (en) * | 2021-10-15 | 2023-11-03 | 万津实业(赤壁)有限公司 | Sputtering coating device |
| CN114351100A (en) * | 2021-12-10 | 2022-04-15 | 万津实业(赤壁)有限公司 | Color difference preventing antireflection film coating equipment |
| CN114351100B (en) * | 2021-12-10 | 2023-11-03 | 万津实业(赤壁)有限公司 | Anti-chromatic aberration anti-reflection film coating equipment |
| CN114606472A (en) * | 2022-01-17 | 2022-06-10 | 万津实业(赤壁)有限公司 | Coated workpiece bearing device and drum-type coating machine |
| CN114606472B (en) * | 2022-01-17 | 2023-11-03 | 万津实业(赤壁)有限公司 | Film plating workpiece bearing device and roller type film plating machine |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190625 |