CN102179970B - Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material - Google Patents
Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material Download PDFInfo
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- CN102179970B CN102179970B CN201110051609.8A CN201110051609A CN102179970B CN 102179970 B CN102179970 B CN 102179970B CN 201110051609 A CN201110051609 A CN 201110051609A CN 102179970 B CN102179970 B CN 102179970B
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Abstract
The invention provides a heat conducting material, a preparation process thereof and an LED (light-emitting diode) circuit board using the heat conducting material, wherein the heat conducting material consists of a base material and a heat conducting coating arranged on the base material, and the heat conducting coating consists of an Si coated film arranged on the base material through a magnetron sputtering process, a DLC (Diamond like carbon) coated film arranged on the Si coated film through an ion beam technology, and a Cu coated film arranged on the DLC coated film through a magnetron sputtering process. The invention has the following main beneficial effects: a DLC coating is deposited on an insulating base plate, the heat conducting material has the characteristics of ultrahigh heat conducting property and good insulating property, and the preparation process is simple and high-efficient, thus having good popularization value.
Description
Technical field
The present invention relates to a kind of Heat Conduction Material and preparation technology thereof, and use the LED wiring board of this Heat Conduction Material, belong to coating material technical field.
Background technology
In recent years, various coating technology developments, for industry manufacture and daily life are brought many progress and facility.Rely on coating technology, can make product or parts obtain better surface property, thereby make up some characteristic that material itself does not have.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3key) and graphite-structure (sp
2key) metastable amorphous substance.
In coating technology, physical vapour deposition (PVD) refers to by processes such as evaporation, ionization or sputters, produces metallic and reacts formation Compound deposition with reacting gas at surface of the work, is called for short PVD.Conventional PVD coating technique is mainly divided three classes at present, vacuum vapor plating, vacuum sputtering plating and vacuum ionic bundle plated film.Wherein, sputter coating is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on substrate.
Industrial, some thermals source or light source, for example emerging LED device or module, often needs quick conductive and heat radiation, and meanwhile, some occasions also need Heat Conduction Material to have good insulating properties.Compared with the good material graphite of another heat conductivility (thermal conductivity factor of graphite is in 450W/mK left and right), DLC coating not only has higher thermal conductivity factor, in all directions, there is the same capacity of heat transmission simultaneously, and graphite only has above heat conductivility in single plane, and heat conductivility is in vertical direction poor.Graphite itself is conductive material simultaneously, so if the LED wiring board of making as heat conducting base material using graphite needs multiple supplementary insulation technique and cause cost to increase.Therefore, the material of satisfied insulation and high thermal conductivity is often very expensive simultaneously.
Summary of the invention
The object of the invention is to solve above-mentioned technical problem, provide a kind of employing to there is the Heat Conduction Material of high-termal conductivity and high-insulativity simultaneously.
Object of the present invention is achieved through the following technical solutions:
A kind of Heat Conduction Material, comprises base material and is arranged on the heat conducting coating on base material, described heat conducting coating comprises by magnetron sputtering technique is located at the Si layer plated film on described base material; Be located at the DLC layer plated film on described Si layer plated film by ion beam technology; Be located at the Cu layer plated film on described DLC layer plated film by magnetron sputtering technique.
Preferably, the thickness of described Si layer plated film is 1 ± 0.1 micron, and what in the magnetron sputtering technique of described generation Si layer plated film, use is the more than 99.9999% single crystalline Si target of purity.
Preferably, the thickness of described DLC layer plated film is 2 ± 0.2 microns.
Preferably, the thickness of described Cu layer plated film is 5 ± 0.5 microns, and what in the magnetron sputtering technique of described generation Cu layer plated film, use is the Cu target of purity more than 95%.
Preferably, the comprehensive thermal conductivity factor of Heat Conduction Material is more than or equal to 480W/mK, the breakdown voltage resistant 500V that is more than or equal to.
Preferably, described base material is insulating substrate.
The present invention has also disclosed a kind of preparation technology of Heat Conduction Material, comprises the steps:
(1) base material is clamped in vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 × 10
-5the above vacuum of Pa;
(2) in plated film vacuum chamber, pass into the hydrogen of throughput between 500～900sccm, use ion beam to carry out ionization bombarding base material to the hydrogen of introducing, when ionization, ion energy is more than 1,900eV;
(3) in plated film vacuum chamber, pass into the argon gas of throughput between 50～70sccm, use non-balance magnetically controlled sputter negative electrode to carry out Si plated film to base material, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600～800V, frequency 40～60kHz on described negative electrode;
(4) in plated film vacuum chamber, pass into the acetylene gas of throughput between 300～500sccm, use ion beam base material to be carried out to the plated film of DLC, when plated film by the ion energy of ion beam ionization 1, more than 200eV, more than applying 5000V on negative electrode, the DC pulse bias voltage of pulse frequency 60～80kHz;
(5) in plated film vacuum chamber, pass into the argon gas of throughput between 50～70sccm, use non-balance magnetically controlled sputter negative electrode base material to be carried out to the plated film of Cu, plated film uses the Cu target of purity more than 95%, applies the pulse direct current of voltage 300～500V on described negative electrode.
Wherein, the bombardment time in described the 2nd step is 45 minutes, and the plated film time in described the 3rd step is 50 minutes, and the plated film time in described the 4th step is 150 minutes, and the plated film time in described the 5th step is 30 minutes.
The present invention also provides a kind of LED wiring board, comprising: base material, be arranged on the heat conducting coating on base material, and be arranged on the LED particle on heat conducting coating, described heat conducting coating comprises by magnetron sputtering technique is located at the Si layer plated film on described base material; Be located at the DLC layer plated film on described Si layer plated film by ion beam technology; Process by the Cu layer plated film of being located at by magnetron sputtering technique on described DLC layer plated film the copper foil circuit obtaining; Described LED particle is connected in described copper foil circuit.
Preferably, described base material is aluminium base.
Beneficial effect of the present invention is mainly reflected in: adopt physical gas phase deposition technology, integrated application magnetron sputtering technique and ion beam technology, on insulating materials substrate, deposit DLC coating, make Heat Conduction Material there is super-high heat-conductive performance and there are good insulating properties.This Heat Conduction Material is used as the wiring board heat dispersion excellence of LED light source module, good insulating, and the preparation technology of Heat Conduction Material is also simple efficient, has good promotional value.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of Heat Conduction Material of the present invention.
Fig. 2 is the schematic diagram of the LED wiring board that has used Heat Conduction Material of the present invention.
The specific embodiment
Below in conjunction with embodiment, the present invention is described in detail:
The present invention comprehensively adopts magnetron sputtering technique and the ion beam technology in PVD technology, selects different materials as Si, H
2, C
2h
2and Cu, change the parameter such as pressure, bias voltage in deposition process, prepare the Heat Conduction Material of tool heat conducting coating on base material.
Simply introduce the operation principle of magnetron sputtering technique and ion beam technology at this.
Magnetron sputtering technique is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on substrate.Ion beam technology refers to that the gas being introduced under vacuum environment is ionized under the electromagnetic field acting in conjunction of ion beam; Ionizable ion is accelerated under the electric field action between ion beam and substrate, and bombards or be deposited on substrate with the form of high energy particle; The gas being introduced into, according to the needs of technique, may be Ar, H
2or C
2h
2deng, thereby complete the techniques such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
Heat conducting coating of the present invention has multicoating, has good binding ability between each plated film.The Heat Conduction Material of final products has super-high heat-conductive performance and has good insulating properties, and comprehensive thermal conductivity factor reaches 480W/mK, breakdown voltage resistant reaching more than 500 volts.This Heat Conduction Material can be used as the wiring board of LED light source module, or heat conduction and heat radiation device.
Preparing the base material that described Heat Conduction Material uses can be for insulating substrate or for the non-base material of insulation, as aluminium base.
Prepare the magnetic control spattering target that described heat conducting coating uses and comprise 2 kinds of solid materials: single crystalline Si (purity is more than 99.9999%) and Cu (purity is more than 95%).The gas using in reactive sputtering process comprises hydrogen (purity is more than 99.999%), argon gas (purity is more than 99.999%) and acetylene gas (purity is more than 98%).The power supply that magnetron sputtering adopts is dc source.
The technical process of preparing Heat Conduction Material is roughly as follows:
First, base material is cleaned up in supersonic wave cleaning machine, then carries out successively step:
(1) base material is clamped in vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 × 10
-5the above vacuum of Pa;
(2) in plated film vacuum chamber, pass into the hydrogen of throughput between 500～900sccm, use ion beam to carry out ionization bombarding base material to the hydrogen of introducing, when ionization, ion energy is more than 1,900eV;
In this step, bombardment time is 40 to 50 minutes, is preferably 45 minutes;
(3) in plated film vacuum chamber, pass into the argon gas of throughput between 50～70sccm, use non-balance magnetically controlled sputter negative electrode to carry out Si plated film to base material, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600～800V, frequency 40～60kHz on described negative electrode;
In this step, the plated film time is 40 to 60 minutes, is preferably 50 minutes, 1 micron of left and right of the Si layer thickness that plates, be preferably 1 ± 0.1 micron;
(4) in plated film vacuum chamber, pass into the acetylene gas of throughput between 300～500sccm, use ion beam base material to be carried out to the plated film of DLC, when plated film by the ion energy of ion beam ionization 1, more than 200eV, more than applying 5000V on negative electrode, the DC pulse bias voltage of pulse frequency 60～80kHz;
In this step, the plated film time is 120 to 180 minutes, is preferably 150 minutes, 2 microns of left and right of the DLC layer thickness that plates, be preferably 2 ± 0.2 microns;
(5) in plated film vacuum chamber, pass into the argon gas of throughput between 50～70sccm, use non-balance magnetically controlled sputter negative electrode base material to be carried out to the plated film of Cu, plated film uses the Cu target of purity more than 95%, applies the pulse direct current of voltage 300～500V on described negative electrode.
In this step, 20 to 40 minutes plated film time, is preferably 30 minutes, 5 microns of left and right of the Cu layer thickness that plates, be preferably 5 ± 0.5 microns.
As Fig. 1, use above-mentioned technique, the Heat Conduction Material producing comprises base material 1 and is arranged on the heat conducting coating on base material 1, described heat conducting coating comprises by magnetron sputtering technique is located at the Si layer plated film 2 on described base material; Be located at the DLC layer plated film 3 on described Si layer plated film by ion beam technology; Be located at the Cu layer plated film 4 on described DLC layer plated film by magnetron sputtering technique.
Use this Heat Conduction Material, can manufacture the good thermal component of multiple needs, insulation is had the parts of requirement especially simultaneously.
By selecting the base material of insulating substrate as Heat Conduction Material, final Heat Conduction Material can obtain especially excellent insulating properties.
By specific embodiment, Heat Conduction Material of the present invention application is industrially described below.
Fig. 2 is the LED wiring board that has used Heat Conduction Material of the present invention, and it comprises Heat Conduction Material and is arranged on the LED particle 5 on Heat Conduction Material, the further processing processing of the Cu layer plated film warp formation copper foil circuit 41 of Heat Conduction Material, and LED particle 5 is arranged on copper foil circuit 41.
In the present embodiment, the base material 1 of Heat Conduction Material is metal material, preferably aluminium base; Foregoing, substrate 1 top is Si layer plated film 2; Si layer plated film top is DLC layer plated film 3; Copper foil circuit 41 for being further processed to form through Cu layer plated film 4 on DLC layer plated film.
LED light-emitting particles 5 is arranged in copper foil circuit 41 tops, in the positive pole of LED light-emitting particles 5 and negative pole access copper foil circuit, to be controlled and power supply and luminous.
The direction of distributing that is oriented to heat of the arrow in Fig. 2, as Fig. 2, the heat major part that LED light-emitting particles produces is outwards distributed by Heat Conduction Material.
The LED wiring board of this specific embodiment has excellent heat-conducting effect, and as following table one, the comprehensive thermal conductivity factor of the aluminium base with Heat Conduction Material of the present invention reaches 480W/mK, considerably beyond the 1-3W/mK of conventional aluminium substrate and the approximately 110W/mK of ceramic substrate.
| LED wiring board material | Conventional aluminium substrate | Ceramic substrate | With the aluminium base of Heat Conduction Material |
| Comprehensive |
1～3W/mK | ～110W/mK | 480W/mK |
| Breakdown voltage resistant | ＞500V | ＞500V | ＞500V |
Table one
Heat Conduction Material of the present invention also can be for the manufacture of other product, as manufactured LED light source heat conduction and heat radiation device etc.
But the Heat Conduction Material making by above-mentioned preparation technology is not only confined to manufacture the said goods, it has industrial prospect widely, can be applied to the multiple occasion that needs high thermal conductivity and insulating properties.
Claims (4)
1. a preparation method for Heat Conduction Material, is characterized in that: described Heat Conduction Material comprises base material and be arranged on the heat conducting coating on base material, and described heat conducting coating comprises by magnetron sputtering technique is located at the Si layer plated film on described base material; Be located at the DLC layer plated film on described Si layer plated film by ion beam technology; Be located at the Cu layer plated film on described DLC layer plated film by magnetron sputtering technique; The thickness of described Si layer plated film is 1 ± 0.1 micron; The thickness of described DLC layer plated film is 2 ± 0.2 microns; The thickness of described Cu layer plated film is 5 ± 0.5 microns;
The preparation technology of described Heat Conduction Material in turn includes the following steps,
(1) base material is clamped in vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 × 10
-5the above vacuum of Pa;
(2) in plated film vacuum chamber, pass into the hydrogen of throughput between 500 ~ 900sccm, use ion beam to carry out ionization bombarding base material to the hydrogen of introducing, when ionization, ion energy is more than 1,900eV;
(3) in plated film vacuum chamber, pass into the argon gas of throughput between 50 ~ 70sccm, use non-balance magnetically controlled sputter negative electrode to carry out Si plated film to base material, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600 ~ 800V, frequency 40 ~ 60kHz on described negative electrode;
(4) in plated film vacuum chamber, pass into the acetylene gas of throughput between 300 ~ 500sccm, use ion beam base material to be carried out to the plated film of DLC, when plated film by the ion energy of ion beam ionization 1, more than 200eV, on negative electrode, apply that 5000V is above, the DC pulse bias voltage of pulse frequency 60 ~ 80kHz;
(5) in plated film vacuum chamber, pass into the argon gas of throughput between 50 ~ 70sccm, use non-balance magnetically controlled sputter negative electrode base material to be carried out to the plated film of Cu, plated film uses the Cu target of purity more than 95%, applies the pulse direct current of voltage 300 ~ 500V on described negative electrode.
2. the preparation method of Heat Conduction Material according to claim 1, it is characterized in that: the bombardment time in described the 2nd step is 45 minutes, the plated film time in described the 3rd step is 50 minutes, the plated film time in described the 4th step is 150 minutes, and the plated film time in described the 5th step is 30 minutes.
3. a LED wiring board, it is characterized in that: comprise that application rights requires the LED particle on the Heat Conduction Material that described in 1, preparation method makes and the heat conducting coating that is arranged on described Heat Conduction Material, described Heat Conduction Material comprises by the Cu layer plated film of being located at by magnetron sputtering technique on described DLC layer plated film processes the copper foil circuit obtaining, and described LED particle is connected on described copper foil circuit.
4. LED wiring board according to claim 3, is characterized in that: the base material of described Heat Conduction Material is aluminium base.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110051609.8A CN102179970B (en) | 2011-03-03 | 2011-03-03 | Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material |
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|---|---|---|---|
| CN201110051609.8A CN102179970B (en) | 2011-03-03 | 2011-03-03 | Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material |
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| CN102179970A CN102179970A (en) | 2011-09-14 |
| CN102179970B true CN102179970B (en) | 2014-05-14 |
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| CN102740591A (en) * | 2012-07-09 | 2012-10-17 | 苏州热驰光电科技有限公司 | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof |
| CN103331968B (en) * | 2013-07-04 | 2015-07-15 | 苏州生益科技有限公司 | High thermal conductive fiberglass cloth base laminate |
| WO2017110404A1 (en) * | 2015-12-25 | 2017-06-29 | 三井金属鉱業株式会社 | Copper foil with carrier, copper foil with resin and method for manufacturing printed wiring board |
| CN107706280A (en) * | 2016-08-08 | 2018-02-16 | 深圳市斯迈得半导体有限公司 | A kind of manufacture method of the LED light source manufactured by vacuum sputtering technique |
| CN108286037A (en) * | 2017-12-29 | 2018-07-17 | 昆山米泰克精密电子组件有限公司 | A kind of preparation method of Kato surface insulation nanoscale coating |
| CN111636198A (en) * | 2020-06-11 | 2020-09-08 | 麦福枝 | Method for preparing sterilization film on fiber cloth |
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|---|---|---|---|---|
| CN1294545A (en) * | 1999-03-08 | 2001-05-09 | 时至准钟表股份有限公司 | Resin molding mold and method of forming hard coat on resin molding mold |
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| US8440500B2 (en) * | 2009-05-20 | 2013-05-14 | Interlight Optotech Corporation | Light emitting device |
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|---|---|---|---|---|
| CN1294545A (en) * | 1999-03-08 | 2001-05-09 | 时至准钟表股份有限公司 | Resin molding mold and method of forming hard coat on resin molding mold |
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Granted publication date: 20140514 Termination date: 20170303 |