CN109889026A

CN109889026A - Power device and electric appliance

Info

Publication number: CN109889026A
Application number: CN201910211275.2A
Authority: CN
Inventors: 冯宇翔
Original assignee: Midea Group Co Ltd; Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: Midea Group Co Ltd; GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2019-03-20
Filing date: 2019-03-20
Publication date: 2019-06-14
Anticipated expiration: 2039-03-20
Also published as: CN109889026B; WO2020186733A1

Abstract

The application discloses a kind of power device and electric appliance.Power device includes control signal, upper bridge arm switching tube, lower bridge arm switching tube, upper resistance group, lower resistance group, is connected with control signal and connect the first driving circuit of bridge arm switching tube by upper resistance group and be connected and connect by lower resistance group the second driving circuit of lower bridge arm switching tube with control signal.Control signal has access to the first level, second electrical level or third level.When control signal accesses the first level, first and second driving circuit exports the low and high level of first voltage range.When control signal accesses second electrical level, first and second driving circuit exports the low and high level of second voltage range.When control signal accesses third level, first and second driving circuit exports the low and high level of tertiary voltage range.First voltage range, second voltage range and tertiary voltage range are different.It so can be improved the suitability of silicon, gallium nitride and silicon carbide power device.

Description

Power device and electric appliance

Technical field

This application involves technical field of electric appliances, more specifically, are related to a kind of power device and electric appliance.

Background technique

In the prior art, with the continuous improvement required system energy consumption, intelligent power module (Intelligent Power Module, IPM) power consumption become convertible frequency air-conditioner frequency conversion electrical control power consumption main source, how to reduce intelligent power mould Block power consumption becomes the important topic for influencing intelligent power module or even the application of convertible frequency air-conditioner further genralrlization.Pass through GaN device Or SiC device substitution Si device is the effective way for reducing intelligent power module power consumption, but consequently also bring new problem.

The threshold voltage (15V) of the threshold voltage (3V) of GaN device, the threshold voltage (20V) of SiC device and Si device is no Together.The threshold voltage of GaN device is lower than the threshold voltage of Si device, if using with a high voltage integrated circuit (High Voltage Integrated Circuit, HVIC) pipe driven, and it be easy to cause the grid of GaN device breakdown；SiC device The threshold voltage that the threshold voltage of part is higher than Si device is easy to make if driven using with a high voltage integrated circuit pipe It is not thorough at the opening process of SiC device, the low-power consumption advantage of SiC device cannot play.But if using different high pressures Integrated circuit pipe is driven, and causes the difficulty of the material tissue in production process, is had mixing risk, is also improved intelligent function The cost of rate module.Also, if the high voltage integrated circuit pipe of driving Si device uses in order to guarantee that GaN device is not breakdown Lower voltage is powered, and also be easy to cause the power consumption of entire Si device intelligent power module to improve, or even cause Si device Cisco unity malfunction.

Summary of the invention

The application embodiment provides a kind of power device and electric appliance.

The power device of the application embodiment includes control signal, upper bridge arm switching tube, lower bridge arm switching tube, powers on Resistance group, lower resistance group, with control signal be connected and by upper resistance group connect bridge arm switching tube the first driving circuit and It is connected and connect by lower resistance group the second driving circuit of lower bridge arm switching tube with control signal；Control signal can connect Enter the first level, second electrical level or third level.When control signal accesses the first level, first and second driving circuit is defeated The low and high level of first voltage range out.First and second driving circuit output second when control signal accesses second electrical level The low and high level of voltage range.When control signal accesses third level, first and second driving circuit exports tertiary voltage model The low and high level enclosed.First voltage range, second voltage range and tertiary voltage range are different.

The electric appliance of the application embodiment includes power device described in any of the above-described embodiment and processor, described Processor connects the power device.

In some embodiments, the electric appliance is air-conditioning.

The power device and electric appliance of the application embodiment, can be defeated under the premise of having no need to change external input voltage The low and high level signal of multiple and different voltage ranges is out to adapt to different types of device (such as GaN device, SiC device and Si device Part) use demand, the turn on process of different types of device all in fully on state and will not cause to puncture to it, and Its performance is fully played.And due to can be achieved with output not using same first driving circuit and the second driving circuit With the low and high level signal of voltage range, there is no mixing risk in the production process of power device, be convenient for material tissue, reduces Material Cost.In addition, by upper resistance group and lower resistance group can control the first driving circuit respectively and the second driving circuit is open-minded With shutdown, it ensure that different types of device reliably turns on and off.

The additional aspect and advantage of presently filed embodiment will be set forth in part in the description, partially will be from following Description in become obvious, or recognized by the practice of presently filed embodiment.

Detailed description of the invention

The above-mentioned and/or additional aspect and advantage of the application is from combining in description of the following accompanying drawings to embodiment by change It obtains obviously and is readily appreciated that, in which:

Fig. 1 is the circuit structure diagram of the power device of the application certain embodiments；

Fig. 2 be the power device of the application certain embodiments by bonding line by control signal and power supply or ground phase Schematic diagram even；

Fig. 3 is the module diagram of the power device of the application embodiment；

Fig. 4 to Figure 11 is the structural schematic diagram of the upper bridge arm switching tube of the application certain embodiments, lower bridge arm switching tube；

Figure 12 is the schematic diagram of the UH driving circuit of the application certain embodiments；

Figure 13 is the schematic diagram of the VH driving circuit of the application certain embodiments；

Figure 14 is the schematic diagram of the WH driving circuit of the application certain embodiments；

Figure 15 is the schematic diagram of the UL/VL/WL driving circuit of the application certain embodiments；

Figure 16 is the module diagram of the electric appliance of the application certain embodiments.

Specific embodiment

Presently filed embodiment is described further below in conjunction with attached drawing.Same or similar label is from beginning in attached drawing To the same or similar element of expression or element with the same or similar functions eventually.

In addition, the presently filed embodiment described with reference to the accompanying drawing is exemplary, it is only used for explaining the application's Embodiment, and should not be understood as the limitation to the application.

Referring to Fig. 1, the application embodiment provides a kind of power device 100, the power device 100 of the application includes control Input terminal SS, upper bridge arm switching tube 127 and lower bridge arm switching tube 128 processed, upper resistance group 134, lower resistance group 135, with control it is defeated Enter to hold SS to be connected and connect the first driving circuit 129 of upper bridge arm switching tube 127 by upper resistance group 134 and input with control It holds SS to be connected and connects the second driving circuit 120 of lower bridge arm switching tube 128 by lower resistance group 135.Control signal SS energy Enough access the first level, second electrical level or third level.When control signal SS accesses the first level, the first driving circuit 129 and second driving circuit 120 export first voltage range low and high level signal.When control signal SS accesses second electrical level When, the low and high level signal of the first driving circuit 129 and the second driving circuit 120 output second voltage range.When control inputs When holding SS access third level, the low and high level of the first driving circuit 129 and the second driving circuit 120 output tertiary voltage range Signal.First voltage range, second voltage range and tertiary voltage range are different.

The power device 100 of the application can export different voltages under the premise of having no need to change external input voltage The low and high level signal of range to adapt to the use demand of different types of device (such as GaN device, SiC device and Si device), The turn on process of different types of device is all in fully on state and will not cause to puncture to it, and its performance obtains sufficiently Performance.And due to can be achieved with output different voltages range using same first driving circuit and same second driving circuit Low and high level signal, there is no mixing risk in the production process of power device 100, be convenient for material tissue, reduce material at This.In addition, the first driving circuit 129 and the second driving circuit can be controlled respectively by upper resistance group 134 and lower resistance group 135 120 open and turn off, and ensure that different types of device reliably turns on and off.

Referring to Fig. 1, in some embodiments, the first driving circuit 129 includes UH driving circuit 101, VH driving electricity Road 102 and WH driving circuit 103；Second driving circuit 120 includes UL/VL/WL driving circuit 104.In present embodiment, UH is driven Dynamic circuit 101, VH driving circuit 102, WH driving circuit 103 and UL/VL/WL driving circuit 104 can be the drive in electric appliance 1000 Dynamic circuit, such as can be the driving circuit of the three-phase of the compressor of air-conditioning, wherein UL/VL/WL driving circuit 104 includes UL Driving circuit, VL driving circuit and WL driving circuit, UH driving circuit 101 are connect with UL driving circuit, VH driving circuit 102 with The connection of VL driving circuit, WH driving circuit 103 are connect with WL driving circuit.

Upper bridge arm switching tube 127 includes bridge in bridge arm switching tube 122 and third on bridge arm switching tube 121, second on first Arm switch pipe 123.Lower bridge arm switching tube 128 includes the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third Lower bridge arm switching tube 126.Upper resistance group 134 include first grid open resistance H-RON1, second grid open resistance H-RON2, Third grid open resistance H-RON3, first grid shutdown resistance H-ROFF1, second grid turn off resistance H-ROFF12, third Gate turn-off resistance H-ROFF3.H-RON1 connects UH driving circuit 101, bridge in other end connection first with one end of H-ROFF1 The control electrode of arm switch pipe 121 is to control turning on and off for bridge arm switching tube 121 on first.The one of H-RON2 and H-ROFF2 End connection VH driving circuit 102, the other end connect the control electrode of bridge arm switching tube 122 on second to control bridge arm on second and switch Pipe 122 turns on and off.H-RON3 connects WH driving circuit 103 with one end of H-ROFF3, and the other end connects bridge arm in third The control electrode of switching tube 123 is to control turning on and off for bridge arm switching tube 123 in third.Lower resistance group 135 includes the 4th grid Pole open resistance L-RON1, the 5th grid open resistance L-RON2, the 6th grid open resistance L-RON3, the 4th gate turn-off electricity Hinder L-ROFF1, the 5th gate turn-off resistance L-ROFF2, the 6th gate turn-off resistance L-ROFF3.The one of L-RON1 and L-ROFF1 End connection UL/VL/WL driving circuit 104, the other end connect the control electrode of the first lower bridge arm switching tube 124 to control the first lower bridge Arm switch pipe 124 turns on and off.L-RON2 connects UL/VL/WL driving circuit 104 with one end of L-ROFF2, and the other end connects The control electrode of the second lower bridge arm switching tube 125 is connect to control turning on and off for the second lower bridge arm switching tube 125.L-RON3 and L- One end of ROFF3 connects UL/VL/WL driving circuit 104, and the other end connects the control electrode of third lower bridge arm switching tube 126 to control Third lower bridge arm switching tube 126 processed turns on and off.Wherein, control signal SS and UH driving circuit 101, VH driving circuit 102 are connected with WH driving circuit 103, and UH driving circuit 101, VH driving circuit 102 and WH driving circuit 103 respectively drive Bridge arm switching tube 123 in bridge arm switching tube 122 and third on bridge arm switching tube 121, second on first.UH driving circuit 101 with Bridge arm switching tube 121 is connected on first, and VH driving circuit 102 is connected with bridge arm switching tube 122 on second, WH driving circuit 103 It is connected with bridge arm switch 123 in third；Control signal SS is connected with UL/VL/WL driving circuit 104, and UL/VL/WL drives Circuit 104 drives the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126, UL/ VL/WL driving circuit 104 is switched with the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 with third lower bridge arm respectively Pipe 126 connects.

Wherein, the first level is power level VCC, and second electrical level 0, third level is half power level VCC (that is, VCC/2)；First voltage range is 0V~-3V, and second voltage range is 0V~15V, and tertiary voltage range is 0V~20V.

More, power device 100 further includes the end VCC, the end GND and reference power source end Vreg, when control signal SS is logical When crossing the connection of bonding line 115 (bonding wire) (Fig. 2 shows) with the end VCC, control signal SS accesses the first level；Work as control When input terminal SS processed is connect by bonding line 115 with the end GND, control signal SS accesses second electrical level；As control signal SS When being connect by bonding line 115 with reference power source end Vreg, control signal SS accesses third level.

Specifically, referring to Fig. 1, by UH driving circuit 101, VH driving circuit 102, WH driving circuit 103 and UL/VL/ WL driving circuit 104 is integrated in inside HVIC pipe 111, and the end VCC of HVIC pipe 111 powers as the low-pressure area of power device 100 Power positive end VDD, VDD are generally 15V；Inside HVIC pipe 111, the end VCC and UH driving circuit 101, VH driving circuit 102, WH driving circuit 103, UL/VL/WL driving circuit 104 power supply anode be connected, the power supply of reference power source end Vreg Anode is connected；Here, it is the voltage source of VCC/2 that reference power source end Vreg, which is the voltage value generated inside HVIC pipe 111,.

The end HIN1 of HVIC pipe 111 is as bridge arm input terminal UHIN in the U phase of power device 100, inside HVIC pipe 111 It is connected with the input terminal of UH driving circuit 101；The end HIN2 of HVIC pipe 111 is as bridge arm input terminal in the V phase of power device 100 VHIN is connected in 111 inside of HVIC pipe with the input terminal of VH driving circuit 102；The end HIN3 of HVIC pipe 111 is as power device Bridge arm input terminal WHIN in 100 W phase is connected in 111 inside of HVIC pipe with the input terminal of WH driving circuit 103；HVIC pipe 111 U phase lower bridge arm input terminal ULIN of the end LIN1 as power device 100, in 111 inside of HVIC pipe and UL/VL/WL driving electricity The first input end on road 104 is connected；V phase lower bridge arm input terminal VLIN of the end LIN2 of HVIC pipe 111 as power device 100, It is connected in 111 inside of HVIC pipe with the second input terminal of UL/VL/WL driving circuit 104；The end LIN3 of HVIC pipe 111 is as function The W phase lower bridge arm input terminal WLIN of rate device 100 is inputted in 111 inside of HVIC pipe and the third of UL/VL/WL driving circuit 104 End is connected.Here, the six tunnels input of U, V, W three-phase of power device 100 receives the input signal of 0V or 5V.

Low-pressure area power supply negative terminal COM of the end GND of HVIC pipe 111 as power device 100, and with UH driving circuit 101, VH driving circuit 102, WH driving circuit 103,104 power supply negative terminal of UL/VL/WL driving circuit are connected.HVIC pipe 111 The end VB1 be connected in the inside of HVIC pipe 111 with the higher-pressure region power supply anode of UH driving circuit 101, outside HVIC pipe 111 Connect one end of capacitor 131, and the U phase higher-pressure region power supply anode as power device 100.The height of UH driving circuit 101 Level output end (that is, the end P-HO1) and low level output end (that is, the end N-HO1) outside HVIC pipe 111 respectively with first grid Open resistance H-RON1 is connected with first grid shutdown resistance H-ROFF1.The end VS1 of HVIC pipe 111 the inside of HVIC pipe 111 with The higher-pressure region power supply negative terminal of UH driving circuit 101 is connected, the bridge arm switching tube 121 on 111 outside of HVIC pipe is with first Output negative pole, the output cathode of the first lower bridge arm switching tube 124, the other end of capacitor 131 are connected, and as power device 100 U phase higher-pressure region power supply negative terminal UVS.

Higher-pressure region power supply anode phase of the end VB2 of HVIC pipe 111 in 111 inside and VH driving circuit 102 of HVIC pipe Even, the U phase higher-pressure region power supply anode in one end of 111 external connection capacitor 132 of HVIC pipe, as power device 100.VH The high level output end (that is, the end P-HO2) and low level output end (that is, the end N-HO2) of driving circuit 102 are outside HVIC pipe 111 Portion is connect with second grid open resistance H-RON2 and second grid shutdown resistance H-ROFF2 respectively.The end VS2 of HVIC pipe 111 It is connected in 111 inside of HVIC pipe with the higher-pressure region power supply negative terminal of VH driving circuit 102, in 111 outside of HVIC pipe and upper bridge The output negative pole of arm power tube 122, the output cathode of the second lower bridge arm switching tube 125, the other end of capacitor 132 are connected, and make For the W phase higher-pressure region power supply negative terminal VVS of power device 100.

Higher-pressure region power supply anode phase of the end VB3 of HVIC pipe 111 in 111 inside and WH driving circuit 103 of HVIC pipe Even, the W phase higher-pressure region power supply anode in one end of 111 external connection capacitor 133 of HVIC pipe, as power device 100.WH The high level output end (that is, the end P-HO3) and low level output end (that is, the end N-HO3) of driving circuit 103 are outside HVIC pipe 111 Portion is connect with third grid open resistance H-RON3 and second grid shutdown resistance H-ROFF3 respectively.The end VS3 of HVIC pipe 111 It is connected in 111 inside of HVIC pipe with the higher-pressure region power supply negative terminal of WH driving circuit 103, in 111 outside of HVIC pipe and power The output negative pole of pipe 123, the output cathode of third lower bridge arm switching tube 126, the other end of capacitor 133 are connected, and as power The W phase higher-pressure region power supply negative terminal WVS of device 100.

UL/VL/WL driving circuit 104 is defeated including the second output sub-circuit 1042, third output sub-circuit 1043 and the 4th Sub-circuit 1044 out.The high level output end (that is, the end P-LO1) and low level output end of second output sub-circuit 1042 are (that is, N- The end LO1) connect respectively with the 4th grid open resistance H-RON4 and the 4th gate turn-off resistance H-ROFF4 outside HVIC pipe 111 It connects.The high level output end (that is, P-LO2) of third output sub-circuit 1043 and low level output end (N-LO2) are in HVIC pipe 111 Outside is connect with the 5th grid open resistance H-RON5 and the 5th gate turn-off resistance H-ROFF5 respectively.4th output sub-circuit 1044 high level output end (that is, P-LO3) and low level output end (N-LO3) outside HVIC pipe 111 respectively with the 6th grid Pole open resistance H-RON6 and the 6th gate turn-off resistance H-ROFF6 connection.The output negative pole of first lower bridge arm switching tube 124 is made For the U phase low reference voltage end UN of power device 100；The output negative pole of second lower bridge arm switching tube 125 is as power device 100 V phase low reference voltage end VN；The output negative pole of third lower bridge arm switching tube 126 is joined as the W phase low-voltage of power device 100 Examine end WN；The output cathode of bridge arm switching tube 121 on first, the output cathode of bridge arm switching tube 122 on second, bridge arm in third The output cathode of switching tube 123 is connected, and high voltage the input terminal P, P as power device 100 generally meet 300V.This embodiment party In formula, the supply voltage of VDD is 15V.

In present embodiment, bridge arm switching tube 122 on bridge arm switching tube 121, second, bridge arm switching tube in third on first 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 can be Si IGBT The combination for managing (i.e. Si device) and Si FRD pipe (Fast recovery diode, fast recovery diode) parallel connection, is also possible to Si The combination of IGBT pipe and GaN SBD (Schottky Barrier Diode, Schottky diode) pipe, is also possible to GaN MOS Manage (Metal Oxide Semiconductor, insulating gate type field effect tube) (i.e. GaN device), be also possible to GaN metal-oxide-semiconductor and The combination of FRD pipe is also possible to the combination of GaN metal-oxide-semiconductor and GaN SBD pipe；It is also possible to Si IGBT pipe and SiC SBD pipe Combination, is also possible to SiC metal-oxide-semiconductor (i.e. SiC device), is also possible to the combination of SiC metal-oxide-semiconductor and FRD pipe, is also possible to SiC The combination of metal-oxide-semiconductor and SiC SBD pipe.

In power device 100, the effect of HVIC pipe 111 is: when control signal SS is VCC level, P-HO1~P- HO3, N-HO1~N-HO3, P-LO1~P-LO3, N-LO1~N-LO3 output 0V~3V low and high level signal, in other words, When control signal SS is the first level, UH driving circuit 101, VH driving circuit 102, WH driving circuit 103 and UL/VL/ The low and high level signal of the output first voltage range of WL driving circuit 104；When the level of control signal SS is 0, P-HO1~ P-HO3, N-HO1~N-HO3, P-LO1~P-LO3, N-LO1~N-LO3 output 0V~15V low and high level signal, that is to say It says, when control signal SS is second electrical level, UH driving circuit 101, VH driving circuit 102, WH driving circuit 103 and UL/ The low and high level signal of the output second voltage range of VL/WL driving circuit 104；When control signal SS is VCC/2 level, P- The low and high level signal of HO1~P-HO3, N-HO1~N-HO3, P-LO1~P-LO3, N-LO1~N-LO3 output 0V~20V, I other words when control signal SS is third level, UH driving circuit 101, VH driving circuit 102,103 and of WH driving circuit The low and high level signal of the output tertiary voltage range of UL/VL/WL driving circuit 104.

And in practical applications, incorporated by reference to Fig. 1 and Fig. 2, power device 100 includes first connecting portion 116, second connecting portion 117 are used to connect the end GND and COM with the end SSS, first connecting portion 116 for connecting the end VCC and vdd terminal, second connecting portion 117 End, the end SSS is for connecting the end SS and reference power source end Vreg.First connecting portion 116 can be to have to lead with second connecting portion 117 Conducting wire, electrode of fax transmission function etc..

Specifically, on first bridge arm switching tube 122 on bridge arm switching tube 121, second, bridge arm switching tube 123 in third, When first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 include GaN device (GaN device is GaN metal-oxide-semiconductor 1211 shown in fig. 4 to fig. 6.For example, bridge arm switchs on bridge arm switching tube 121, second on first Bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm on pipe 122, third Switching tube 126 is the mode of GaN metal-oxide-semiconductor 1211 shown in Fig. 4；Or, bridge arm is opened on bridge arm switching tube 121, second on first Bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and bridge under third on pass pipe 122, third Arm switch pipe 126 is the combination of GaN metal-oxide-semiconductor 1211 and Si FRD pipe 1212 shown in fig. 5；Or, bridge arm is opened on first Close bridge arm switching tube 122 on pipe 121, second, the lower bridge of bridge arm switching tube 123, the first lower bridge arm switching tube 124, second in third Arm switch pipe 125 and third lower bridge arm switching tube 126 are GaN metal-oxide-semiconductor 1211 and GaN SBD pipe 1212 shown in fig. 6, or The combination of GaN metal-oxide-semiconductor 1211 and SiC SBD pipe 1212), inside power device 100, the end SSS passes through bonding line 115 It is connected with the end VCC, control signal SS accesses the first level, the first driving circuit 129 and the second driving circuit 120 output first The low and high level signal of voltage range.

On first bridge arm switching tube 122 on bridge arm switching tube 121, second, in third under bridge arm switching tube 123, first (Si device is when bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 include Si device Fig. 7 is to Si IGBT pipe 1211 shown in Fig. 8.For example, bridge arm switching tube 122, third on bridge arm switching tube 121, second on first Upper bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 It is the combination of Si IGBT pipe 1211 and Si FRD pipe 1212 shown in Fig. 7；Or, bridge arm switching tube 121, on first Bridge arm switching tube 122 on two, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 in third It is that Si IGBT pipe 1211 and GaN SBD pipe 1212 or Si IGBT shown in Fig. 8 are managed with third lower bridge arm switching tube 126 The combination of 1211 and SiC SBD pipe 1212), inside power device 100, control signal SS by bonding line 115 with The end GND is connected, and control signal SS accesses second electrical level, second electricity of the first driving circuit 129 and the output of the second driving circuit 120 Press the low and high level signal of range.

On first bridge arm switching tube 122 on bridge arm switching tube 121, second, in third under bridge arm switching tube 123, first (SiC device when bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 include SiC device For SiC metal-oxide-semiconductor 1211 shown in Fig. 9 to Figure 11.For example, bridge arm switching tube 122 on bridge arm switching tube 121, second on first, Bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube in third 126 be the mode of SiC metal-oxide-semiconductor 1211 shown in Fig. 9；Or, bridge arm switching tube on bridge arm switching tube 121, second on first 122, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 are opened with third lower bridge arm in third Close the combination that pipe 126 is SiCMOS pipe 1211 and Si FRD pipe 1212 shown in Fig. 10；Or, bridge arm switching tube on first 121, bridge arm switching tube 122 on second, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm are opened in third It closes pipe 125 and third lower bridge arm switching tube 126 is SiC metal-oxide-semiconductor 1211 shown in Figure 11 and SiC SBD pipe 1212 or GaN The combination of SBD pipe 1212), inside power device 100, the end SSS passes through bonding line 115 and reference power source end Vreg phase Even, control signal SS accesses third level, and the first driving circuit 129 and the second driving circuit 120 export tertiary voltage range Low and high level signal；

In summary, the supply voltage of the power device 100 of the application embodiment is that 15V is constant, the function of HVIC pipe 111 There is no essence to increase for consumption；Driving GaN device, driving Si device and driving SiC device is same HVIC pipe 111, is produced There is no mixing risk in journey, be convenient for material tissue, reduces Material Cost；It drives GaN device to use the voltage of 3V, drives Si device Using the voltage of 15V, drives SiC device to use the voltage of 20V, make the turn on process of GaN device, SiC device and Si device all It will not be caused to puncture while in fully on state, play respective performance.

Fig. 1 and Fig. 3 are please referred to, in some embodiments, power device 100 includes controller 130, control signal SS It is connect with controller 130, controller 130 accesses the first level, second electrical level or third level for controlling control signal SS.

Controller 130 can be including the digital circuit for exporting the first level, second electrical level or third level, can also To include trigger etc., but not limited to this.The mountable inside in HVIC pipe 111 of controller 130, such as it is mounted on control input Between the end SS and SSS of end or other places.The also mountable outside in HVIC pipe 111 of controller 130, such as be arranged close to control The local or other place of input terminal SS processed.Or controller 130 is mounted on the microprocessor of electric appliance.

Fig. 4 to Figure 11 is the combination of upper bridge arm switching tube 127 and lower bridge arm switching tube 128, bridge arm switch on first Bridge arm switching tube 122 on pipe 121, second, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm in third Switching tube 125 and the structure of third lower bridge arm switching tube 126 are completely the same, are said by taking bridge arm switching tube 121 on first as an example It is bright:

Bridge arm switching tube 121 is the mode of GaN metal-oxide-semiconductor 1211: the drain electrode of GaN metal-oxide-semiconductor 1211 on shown in Fig. 4 first Output cathode as bridge arm switching tube 121 on first；The source electrode of GaN metal-oxide-semiconductor 1211 is as bridge arm switching tube 121 on first Output negative pole；Control electrode of the grid of GaN metal-oxide-semiconductor 1211 as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 is the combination of GaN metal-oxide-semiconductor 1211 and Si FRD pipe 1212 on shown in fig. 5 first: The drain electrode of GaN metal-oxide-semiconductor 1211 is connected with the cathode of Si FRD pipe 1212, and the output as bridge arm switching tube 121 on first is just Pole；The source electrode of GaN metal-oxide-semiconductor 1211 is connected with the anode of Si FRD pipe 1212, and as on first bridge arm switching tube 121 it is defeated Cathode out；Control electrode of the grid of GaN metal-oxide-semiconductor 1211 as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 includes following combination on the first of Fig. 6: (1) GaN metal-oxide-semiconductor 1211 and GaN SBD pipe 1212 combination, wherein the drain electrode of GaN metal-oxide-semiconductor 1211 is connected with the cathode of GaN SBD pipe 1212, and as on first The output cathode of bridge arm switching tube 121；The source electrode of GaN metal-oxide-semiconductor 1211 is connected with the anode of GaN SBD pipe 1212, and as The output negative pole of bridge arm switching tube 121 on one；Control of the grid of GaN metal-oxide-semiconductor 1211 as bridge arm switching tube 121 on first Pole；(2) combination of GaN metal-oxide-semiconductor 1211 and SiC SBD pipe 1212, wherein the drain electrode of GaN metal-oxide-semiconductor 1211 and SiC The cathode of SBD pipe 1212 is connected, and the output cathode as bridge arm switching tube 121 on first；The source electrode of GaN metal-oxide-semiconductor 1211 with The anode of SiC SBD pipe 1212 is connected, and the output negative pole as bridge arm switching tube 121 on first；The grid of GaN metal-oxide-semiconductor 1211 Control electrode of the pole as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 is the combination of Si IGBT pipe 1211 and Si FRD pipe 1212 on shown in Fig. 7 first: The collector of Si IGBT pipe 1211 is connected with the cathode of Si FRD pipe 1212, and the output as bridge arm switching tube 121 on first Anode；The emitter of Si IGBT pipe 1211 is connected with the anode of Si FRD pipe 1212, and as bridge arm switching tube 121 on first Output negative pole；Control electrode of the grid of Si IGBT pipe 1211 as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 includes following combination: (1) Si IGBT pipe 1211 and GaN on shown in Fig. 8 first The combination of SBD pipe 1212, wherein the collector of Si IGBT pipe 1211 is connected with the cathode of GaN SBD pipe 1212, and makees For the output cathode of bridge arm switching tube 121 on first；The anode phase of the emitter of Si IGBT pipe 1211 and GaN SBD pipe 1212 Even, and the output negative pole as bridge arm switching tube 121 on first；The grid of Si IGBT pipe 1211 is as bridge arm switch on first The control electrode of pipe 121；(2) combination of Si IGBT pipe 1211 and SiC SBD pipe 1212, wherein 1211 He of Si IGBT pipe The cathode of SiC SBD pipe 1212 is connected, and the output cathode as bridge arm switching tube 121 on first；The hair of Si IGBT pipe 1211 Emitter-base bandgap grading is connected with the anode of Si SBD pipe, and the output negative pole as bridge arm switching tube 121 on first；Si IGBT pipe 1211 Control electrode of the grid as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 is the mode of SiC metal-oxide-semiconductor 1211: the drain electrode of SiC metal-oxide-semiconductor 1211 on shown in Fig. 9 first Output cathode as bridge arm switching tube 121 on first；The source electrode of SiC metal-oxide-semiconductor 1211 is as bridge arm switching tube 121 on first Output negative pole；Control electrode of the grid of SiC metal-oxide-semiconductor 1211 as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 is the combination of SiC metal-oxide-semiconductor 1211 and Si FRD pipe 1212 on shown in Fig. 10 first: The drain electrode of SiC metal-oxide-semiconductor 1211 is connected with the cathode of Si FRD pipe 1212, and the output as bridge arm switching tube 121 on first is just Pole；The source electrode of SiC metal-oxide-semiconductor 1211 is connected with the anode of Si FRD pipe 1212, and as on first bridge arm switching tube 121 it is defeated Cathode out；Control electrode of the grid of SiC metal-oxide-semiconductor 1211 as bridge arm switching tube 121 on first.

Bridge arm switching tube 121 includes following combination: (1) SiC metal-oxide-semiconductor 1211 and SiC on first shown in Figure 11 The combination of SBD pipe 1212, wherein the drain electrode of SiC metal-oxide-semiconductor 1211 is connected with the cathode of SiC SBD pipe 1212, and conduct The output cathode of bridge arm switching tube 121 on first；The source electrode of SiC metal-oxide-semiconductor 1211 is connected with the anode of SiC SBD pipe 1212, and Output negative pole as bridge arm switching tube 121 on first；The grid of SiC metal-oxide-semiconductor 1211 is as bridge arm switching tube 121 on first Control electrode；(2) combination of SiC metal-oxide-semiconductor 1211 and GaN SBD pipe 1212, wherein the drain electrode of SiC metal-oxide-semiconductor 1211 with The cathode of GaN SBD pipe 1212 is connected, and the output cathode as bridge arm switching tube 121 on first；The source of SiC metal-oxide-semiconductor 1211 Pole is connected with the anode of GaN SBD pipe 1212, and the output negative pole as bridge arm switching tube 121 on first；SiC metal-oxide-semiconductor 1211 Control electrode of the grid as bridge arm switching tube 121 on first.

It is appreciated that bridge arm switching tube 122 can opening for any one combination shown in Fig. 4 to Figure 11 on second Guan Guan；Bridge arm switching tube 123 can be the switching tube of any one combination shown in Fig. 4 to Figure 11 in third；Under first Bridge arm switching tube 124 can be the switching tube of any one combination shown in Fig. 4 to Figure 11；Second lower bridge arm switching tube 125 can be the switching tube of any one combination shown in Fig. 4 to Figure 11；Third lower bridge arm switching tube 126 can be Fig. 4 To the switching tube of any one combination shown in Figure 11.

In addition, bridge arm switching tube 122 on bridge arm switching tube 121, second, bridge arm switching tube in third on above-mentioned first 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 are consistent with the structure of third lower bridge arm switching tube 126 is Refer to: in actual power device 100, bridge arm switching tube 122 on bridge arm switching tube 121, second on first, bridge arm is opened in third Close pipe 123, the first lower bridge arm switching tube 124, second lower bridge arm switching tube 125 and all Fig. 4 of third lower bridge arm switching tube 126 Shown in GaN MOS mode switching tube；Alternatively, bridge arm switching tube 122, third on bridge arm switching tube 121, second on first Upper bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and third lower bridge arm switching tube 126 The switching tube of the combination of all GaN MOS shown in fig. 5 and Si FRD；Alternatively, bridge arm switching tube 121, on first Bridge arm switching tube 122 on two, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 in third With the switching tube of the combination of all GaN metal-oxide-semiconductors shown in fig. 6 of third lower bridge arm switching tube 126 and GaN SBD pipe or The switching tube of the combination of GaN metal-oxide-semiconductor and SiC SBD pipe；Alternatively, bridge arm is opened on bridge arm switching tube 121, second on first Bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 and bridge under third on pass pipe 122, third The switching tube of the combination of all Si IGBT and SiFRD shown in Fig. 7 of arm switch pipe 126；Alternatively, bridge arm is opened on first Close bridge arm switching tube 122 on pipe 121, second, the lower bridge of bridge arm switching tube 123, the first lower bridge arm switching tube 124, second in third The combination of arm switch pipe 125 and third lower bridge arm switching tube 126 all Si IGBT pipe and GaN SBD pipe shown in Fig. 8 Switching tube or Si IGBT pipe and SiC SBD pipe combination switching tube；Alternatively, bridge arm switching tube 121, on first Bridge arm switching tube 122 on two, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm switching tube 125 in third With the switching tube of the mode of all SiC MOS shown in Fig. 9 of third lower bridge arm switching tube 126；Alternatively, bridge arm switchs on first Bridge arm switching tube 122 on pipe 121, second, bridge arm switching tube 123, the first lower bridge arm switching tube 124, the second lower bridge arm in third The switch of the combination of switching tube 125 and all SiC MOS and SiFRD shown in Fig. 10 of third lower bridge arm switching tube 126 Pipe；Alternatively, bridge arm switching tube 122 on bridge arm switching tube 121, second, the lower bridge of bridge arm switching tube 123, first in third on first Arm switch pipe 124, the second lower bridge arm switching tube 125 and SiC MOS shown in all Figure 11 of third lower bridge arm switching tube 126 and The switching tube of the combination of the switching tube or SiC MOS and GaN SBD pipe of the combination of SiC SBD pipe.

Please refer to Figure 12 to Figure 14, Figure 12, Figure 13 and Figure 14 be respectively UH driving circuit 101, VH driving circuit 102 with The embodiment of WH driving circuit 103.It is illustrated by taking UH driving circuit 101 as an example below, VH driving circuit 102, WH driving electricity The structure on road 103 is identical with the structure of UH driving circuit 101, and details are not described herein.

Figure 12 is please referred to, in some embodiments, UH driving circuit 101 includes: the first input sub-circuit 1011, first Switching tube 1012, second switch 1013, third switching tube 1014, the 4th switching tube 1021, first output sub-circuit 1017, the One voltage output sub-circuit 1023 and second voltage export sub-circuit 1024.First input sub-circuit 1011 and control signal SS It is connected.First input sub-circuit 1011 includes the first output end, second output terminal, third output end and the 4th output end.Wherein, When control signal SS is the first level, the first output end and second output terminal export trigger pulse, the output of third output end The trigger pulse of first time length；When control signal SS is second electrical level, the first output end and second output terminal are exported Trigger pulse, third output end export the trigger pulse of the second time span, and first time length is greater than the second time span；When When control signal SS is third level, the first output end and second output terminal export trigger pulse, the 4th output end output the The trigger pulse of two time spans.

First switch tube 1012 is connected with the first output end, when the first output end exports trigger pulse, first switch tube 1012 conductings；Second switch 1013 is connected with second output terminal, when second output terminal exports trigger pulse, second switch 1013 conductings；Third switching tube 1014 is connected with third output end, when third output end exports trigger pulse, third switch 1014 conductings；4th switching tube 1021 is connected with the 4th output end, when the 4th output end exports trigger pulse, the 4th switching tube 1021 conductings.

First voltage export sub-circuit 1023 respectively with first switch tube 1012, second switch 1013 and third switching tube 1014 are connected；Second voltage output sub-circuit 1024 is connected with the 4th switching tube 1021；First output sub-circuit 1017 respectively with First voltage exports sub-circuit 1023 and second voltage output sub-circuit 1024 connects.

Please continue to refer to Figure 12, in some embodiments, first voltage output sub-circuit 1023 includes and first switch The latch and reduction voltage circuit 1016, the first switching module 1018 and third switching tube that pipe 1012 and second switch 1013 are connected 1014 the first connected latch cicuits 1015.First switching module 1018 respectively with latch and reduction voltage circuit 1016 and power supply phase Even.When third switching tube 1014 does not turn on, first voltage exports sub-circuit 1023 and is not connected to the first output sub-circuit 1017 (i.e. the first switching module 1018 is in vacant state, and in other words, the fixing end of the first switching module 1018 is neither selected with 1 End connection is not also connect with 0 selection end)；When first time length is connected in third switching tube 1014 (that is, control signal SS When for the first level), the first latch cicuit 1015 will be latched for controlling the movement of the first switching module 1018 and reduction voltage circuit 1016 with first output sub-circuit 1017 connect (that is, the fixing end of the first switching module 1018 with 1 select end connect), latch and The output voltage of reduction voltage circuit 1016 exports the output voltage of sub-circuit 1023 (that is, first voltage range (0V as first voltage ~3V))；When the second time span is connected in third switching tube 1014 (that is, when control signal SS is second electrical level), the first lock Deposit circuit 1015 for control the movement of the first switching module 1018 connect (that is, the so that the end VB1 is exported sub-circuit 1017 with first One switching module 1018 is in closed state, and fixing end is connect with movable end), the voltage at the end VB1 is exported as first voltage The output voltage (that is, second voltage range (0V~15V)) of sub-circuit 1023.

Please continue to refer to Figure 12, in some embodiments, it includes boost module that second voltage, which exports sub-circuit 1024, 1022, the second switching module 1019, the second latch cicuit 1020 being connected with the 4th switching tube 1021.Second switching module 1019 It is connected respectively with the first output sub-circuit 1017 and boost module 1022, the second latch cicuit 1020 is to the second switching module 1019 It is controlled, when the 4th switching tube 1021 does not turn on, the second switching module 1019 is in an off state, so that the first output Circuit 1017 and second voltage output sub-circuit 1024 disconnect, when the second time span is connected in the 4th switching tube 1021 (that is, control Input terminal SS processed be third level when), the second latch cicuit 1020 control the second switching module 1019 by boost module 1022 with First output sub-circuit 1017 connects (that is, the second switching module 1019 is in closed state, fixing end is connect with movable end), The output voltage of boost module 1022 exports the output voltage of sub-circuit 1024 (that is, tertiary voltage range (0V as second voltage ~20V)).

Fig. 1 and Figure 12 are please referred to, inside UH driving circuit 101, the power supply electricity at the end VCC and the first input sub-circuit 1011 Source anode is connected, and HIN1 is connected with the input terminal of the first input sub-circuit 1011, the input sub-circuit of control signal SS and first 1011 control terminal is connected.First output end of the first input sub-circuit 1011 is connected with the grid of first switch tube 1012, the The second output terminal of one input sub-circuit 1011 is connected with the grid of second switch 1013, and first inputs the of sub-circuit 1011 Three output ends are connected with the grid of third switching tube 1014, the 4th output end and the 4th switching tube of the first input sub-circuit 1011 1021 grid is connected.The end GND and the first input power supply negative terminal of sub-circuit 1011, first switch tube 1012 substrate and Source electrode, second switch 1013 substrate be connected with the substrate of source electrode, third switching tube 1014 with source electrode, the 4th switching tube 1021 Substrate be connected with source electrode.

The drain electrode of first switch tube 1012 enters higher-pressure region and is connected with the first input end of latch and reduction voltage circuit 1016；The The drain electrode of two switching tubes 1013 enters higher-pressure region and is connected with the second input terminal of latch and reduction voltage circuit 1016；Third switching tube 1014 drain electrode enters higher-pressure region and is connected with the enable end of the first latch cicuit 1015；The drain electrode of 4th switching tube 1021 enters height Pressure area is connected with the enable end of the second latch cicuit 1020.It latches and the first output end of reduction voltage circuit 1016 and first switches mould 1 selection end of block 1018 (being analog switch in Figure 12) is connected；It latches and the second output terminal of reduction voltage circuit 1016 and first defeated The input terminal of sub-circuit 1017 is connected out；The control terminal phase of the output end of first latch cicuit 1015 and the first switching module 1018 Even；The fixing end of first switching module 1018 is connected with the power supply anode of the first output sub-circuit 1017；Boost module 1022 output end is connected with the movable end of the second switching module 1019；The output end of second latch cicuit 1020 and the second switching The control terminal of module 1019 is connected.The confession of the power supply anode of VB1 and the first latch cicuit 1015, the second latch cicuit 1020 The power supply anode of electric power positive end, latch and reduction voltage circuit 1016, the power supply anode of boost module 1022, first cut The 0 selection end for changing the mold block 1018 is connected.The power supply negative terminal of VS1 and the first latch cicuit 1015, the second latch cicuit 1020 Power supply negative terminal, the power supply negative terminal of latch and reduction voltage circuit 1016, the power supply negative terminal of boost module 1022, The power supply negative terminal of one output sub-circuit 1017 is connected.After the end VB1 obtains sufficient electricity to the charging of capacitor 131 at the end VCC, The end VB1 can get the output voltage that the opposite end VS1 is 15V.

The effect of first input sub-circuit 1011 is: in the rising edge of the first input 1011 input end signal of sub-circuit, the First output end of one input sub-circuit 1011 exports the pulse signal that a pulse width is 300ns or so；In the first input The failing edge of 1011 input end signal of sub-circuit, the second output terminal of the first input sub-circuit 1011 export a pulse width and are The pulse signal of 300ns or so；When the control signal of the first input sub-circuit 1011 is VCC level, in the first input The third output end of circuit 1011 exports the pulse signal that a pulse width is 600ns (that is, first time length) left and right；When When the control signal of first input sub-circuit 1011 is 0 level, in the third output end output of the first input sub-circuit 1011 One pulse width is the pulse signal of 300ns (that is, second time span) left and right；When the control of the first input sub-circuit 1011 When input terminal is VCC/2 level, exporting a pulse width in the 4th output end of the first input sub-circuit 1011 is 300ns The pulse signal of (that is, second time span) left and right.

The effect of first latch cicuit 1015 is: when the low electricity of 600ns occurs in 1015 input end signal of the first latch cicuit Usually, the output end of the first latch cicuit 1015 exports high level, when 300ns occurs in 1015 input end signal of the first latch cicuit Low level when, the output end of the first latch cicuit 1015 exports low level, when 1015 input end signal of the first latch cicuit from When not occurring low level, the output end of the first latch cicuit 1015 exports VCC/2 voltage.

It latches and the effect of reduction voltage circuit 1016 is: 300ns occur in the first input end of latch and reduction voltage circuit 1016 When low level, permanent High level is exported in the second output terminal of latch and reduction voltage circuit 1016；In latch and reduction voltage circuit 1016 The second input terminal when there is 300ns low level, exported in the second output terminal of latch and reduction voltage circuit 1016 and continue low level, The signal of HIN1 has been reintegrated into two pulse signals that first input 1,011 two output ends of sub-circuit decomposite Whole signal.Also, there is reduction voltage circuit inside latch and reduction voltage circuit 1016, in latch and the second output of reduction voltage circuit 1016 The voltage that end output is 3V to VS1.

The effect of second latch cicuit 1020 is: it is low 300ns occur in the first input end of latch and reduction voltage circuit 1016 When level, permanent High level is exported in the second output terminal of latch and reduction voltage circuit 1016, otherwise exports low level.

The effect of first output sub-circuit 1017 is: voltage value and its power supply anode one when one high level of output Cause, low level when voltage value is consistent with its power supply negative terminal and phase and the consistent signal of HIN1.Here, using 300ns The narrow pulse signal of (that is, first time length) or 600ns (that is, second time span) control first switch tube 1012, second Switching tube 1013, third switching tube 1014 and the 4th switching tube 1021 are to be opened by shortening first switch tube 1012, second The turn-on time for closing pipe 1013, third switching tube 1014 and the 4th switching tube 1021 reduces its power consumption.

The low and high level of the exportable first voltage range of UH driving circuit 101, second voltage range and tertiary voltage range The working principle of signal is as follows:

The signal of HIN1 is defeated first in the rising edge of signal and failing edge respectively after the first input sub-circuit 1011 The first output end and second output terminal that enter sub-circuit 1011 export the burst pulse of a 300ns, which controls the respectively 300ns is connected in one switching tube 1012 and second switch 1013, makes the first input end and second of latch and reduction voltage circuit 1016 Input terminal generates the low level of 300ns respectively, latch and reduction voltage circuit 1016 inside there are the devices such as rest-set flip-flop, make two it is low Level signal is reassembled into the completely signal with HIN1 with phase.

1, when upper bridge arm switching tube 127 includes GaN metal-oxide-semiconductor with lower bridge arm switching tube 128, control signal SS is connect Enter VCC level (the first level), the 4th output end of the first input sub-circuit 1011 is not in high level, the 4th switching tube 1021 will not open, and the input terminal of the second latch cicuit 1020 is not in low level, then the output of the second latch cicuit 1020 End keeps low level, therefore the second switching module 1019 is in an off state.And the third output of the first input sub-circuit 1011 There is 600ns (that is, first time length) high level pulse in end, and the conducting of 600ns occurs in third switching tube 1014, and first latches There is 600ns low level in the input terminal of circuit 1015, then the output end of the first latch cicuit 1015 exports level from low to high, makes The 1 selection end for obtaining the first switching module 1018 is connect with fixing end, the power supply anode and lock of the first output sub-circuit 1017 It deposits and the first output end of reduction voltage circuit 1016 is connected, the high level output end (that is, the end P-HO1) of the first output sub-circuit 1017 Export the voltage of 3V and 0V respectively with low level output end (that is, the end N-HO1).

2, when upper bridge arm switching tube 127 includes Si IGBT pipe with lower bridge arm switching tube 128, control signal SS is connect Enter 0 level (second electrical level), so that the 4th output end of the first input sub-circuit 1011 is not in high level, the 4th switching tube 1021 will not open, and the input terminal of the second latch cicuit 1020 is not in low level, then the output of the second latch cicuit 1020 End keeps low level, therefore the second switching module 1019 is in an off state.And the third output of the first input sub-circuit 1011 There is 300ns (that is, second time span) high level pulse in end, and the conducting of 300ns occurs in third switching tube 1014, and first latches There is 300ns low level in the input terminal of circuit 1015, then the output end of the first latch cicuit 1015 exports level from high to low, makes The 0 selection end for obtaining the first switching module 1018 is connect with fixing end, the power supply anode and VB1 of the first output sub-circuit 1017 It is connected, the high level output end (that is, the end P-HO1) and low level output end (that is, the end N-HO1) point of the first output sub-circuit 1017 Not Shu Chu 15V and 0V voltage.

3, when upper bridge arm switching tube 127 includes SiC metal-oxide-semiconductor with lower bridge arm switching tube 128, control signal SS is connect Enter VCC/2 level (third level), so that the third output end of the first input sub-circuit 1011 is not in high level, third is opened Closing pipe 1014 will not open, and the input terminal of the first latch cicuit 1015 is not in low level, then first latch cicuit 1015 Output end exports always low level, and the first switching module 1018 is in vacant state.And the of the first input sub-circuit 1011 There is 300ns (that is, second time span) high level pulse in four output ends, and the conducting of 300ns occurs in the 4th switching tube 1021, the There is 300ns low level in the input terminal of two latch cicuits 1020, then the output end of the second latch cicuit 1020 exports high level, the The movable end of two switching modules 1019 is connected with fixing end, and the second switching module 1019 is in closed state, the first output son electricity The power supply anode on road 1017 is connected with the output end of the second boost module 1022, the high level of the first output sub-circuit 1017 Output end (that is, the end P-HO1) and low level output end (that is, the end N-HO1) export the voltage of 20V and 0V respectively.

Please refer to Figure 15, UL/VL/WL driving circuit 104 include the second input sub-circuit 1041, decompression sub-circuit 1048, Boost sub-circuit 1050, switch module 1049 and with second input sub-circuit 1041, switch module 1049, decompression sub-circuit 1048 and the connected tertiary voltage of boosting sub-circuit 1050 export sub-circuit 1051.Second input sub-circuit 1041 includes first defeated Outlet, second output terminal, third output end, the 4th output end and the 5th output end, wherein when control signal SS inputs first When level, the 4th output end exports the first trigger pulse；When control signal SS inputs second electrical level, the output of the 4th output end Second trigger pulse, the first trigger pulse and the second trigger pulse are reversed；When control signal SS exports third level, the 5th Output end exports trigger pulse；Supply voltage is depressurized to first voltage range by decompression sub-circuit 1048；Boost sub-circuit 1050 Supply voltage is boosted into tertiary voltage range；Switch module 1049 with decompression sub-circuit 1048 be connected, switch module 1049 by The control of 5th output end；Wherein, when the 4th output end exports the first trigger pulse, tertiary voltage exports sub-circuit 1051 and exports The low and high level signal of first voltage range；When 4th output end exports the second trigger pulse, tertiary voltage exports sub-circuit The low and high level signal of 1051 output second voltage ranges；When the 5th output end exports trigger pulse, tertiary voltage output The low and high level signal of the output tertiary voltage range of circuit 1051.

Figure 15 is please referred to, in some embodiments, it includes that the second output respectively is sub that tertiary voltage, which exports sub-circuit 1051, Circuit 1042, third output sub-circuit the 1043, the 4th export sub-circuit 1044, third switching module 1045, the 4th switching module 1046 and the 5th switching module 1047.The first output end, second output terminal and the third output end of second input sub-circuit 1041 It is connected respectively with the second output sub-circuit 1042, third output sub-circuit 1043 and the 4th output sub-circuit 1044, third switching Module 1045, the 4th switching module 1046 and the 5th switching module 1047 are exported with the second output sub-circuit 1042, third respectively Sub-circuit 1043 and the 4th output sub-circuit 1044 are connected.Wherein, third switching module 1045, the 4th switching module 1046 and Five switching modules 1047 select supply voltage or decompression son electricity according to the output of the 4th output end of the second input sub-circuit 1041 Output voltage of the output voltage on road 1048 as tertiary voltage output sub-circuit 1051.

As shown in figure 15, inside UL/VL/WL driving circuit 104, the power supply at the end VCC and the second input sub-circuit 1041 Power positive end, the power supply anode of sub-circuit 1050 that boosts, the power supply anode for being depressured sub-circuit 1048, third switch mould 0 selection end of block 1045,0 selection end of the 4th switching module 1046,0 selection end of the 5th switching module 1047 are connected.LIN1 It is connected with the first input end of the second input sub-circuit 1041.The second input terminal phase of LIN2 and the second input sub-circuit 1041 Even.LIN3 is connected with the third input terminal of the second input sub-circuit 1041.

Control signal SS is connected with the control terminal of the second input sub-circuit 1041, and the first of the second input sub-circuit 1041 Output end is connected with the input terminal of the second output sub-circuit 1042；The second output terminal and third of second input sub-circuit 1041 are defeated The input terminal of sub-circuit 1043 is connected out；The third output end and the 4th of second input sub-circuit 1041 exports sub-circuit 1044 Input terminal is connected；Second input sub-circuit 1011 the 4th output end respectively with the control terminal of third switching module 1045, the 4th The control terminal of switching module 1046, the control terminal of the 5th switching module 1047 are connected.

The end GND and the power supply negative terminal of the second input sub-circuit 1041, the power supply of the second decompression sub-circuit 1048 It is negative terminal, the power supply negative terminal of the second output sub-circuit 1042, the power supply negative terminal of third output sub-circuit 1043, the 4th defeated The power supply negative terminal of sub-circuit 1044 is connected out；Be depressured sub-circuit 1048 output end respectively with third switching module 1045 1 selection end, 1 selection end of the 4th switching module 1046,1 selection end of the 5th switching module 1047 are connected.

The effect of second input sub-circuit 1041 is: in the first output end output and second of the second input sub-circuit 1041 Input signal of the first input end with phase of sub-circuit 1041；In the second output terminal output and the of the second input sub-circuit 1041 Signal of second input terminal of two input sub-circuits 1041 with phase；Second input sub-circuit 1041 third output end output with Signal of the third input terminal of second input sub-circuit 1041 with phase.

When the control signal SS of the second input sub-circuit 1041 is VCC level, in the second input sub-circuit 1041 4th output end exports high level；When the control signal SS of the second input sub-circuit 1041 is 0 level, in the second input 4th output end of circuit 1041 exports low level；When the control signal SS of the second input sub-circuit 1041 is VCC/2 level When, high level is exported in the 5th output end of the second input sub-circuit 1041.

The effect of decompression sub-circuit 1048 is: the voltage for being 3V to the end GND in the output end output of decompression sub-circuit 1048. The effect of boosting sub-circuit 1050 is: the voltage for being 15V to the end GND in the output end output of boosting sub-circuit 1050.

Second output sub-circuit 1042 effect be output one high level when voltage value it is consistent with its power supply anode, Voltage value is consistent with its power supply negative terminal when low level and phase and the consistent signal of LIN1；Third exports sub-circuit 1043 Voltage value is consistent with its power supply anode when effect is one high level of output, low level when voltage value and its power supply bear Hold consistent and phase and the consistent signal of LIN2；The voltage value when effect of 4th output sub-circuit 1044 is one high level of output Voltage value and its power supply negative terminal is consistent and phase and LIN3 consistent letter when, low level consistent with its power supply anode Number.

The height of the exportable first voltage range of UL/VL/WL driving circuit 104, second voltage range and tertiary voltage range Low level working principle is as follows:

1, when upper bridge arm switching tube 127 and lower bridge arm switching tube 128 include GaN metal-oxide-semiconductor, control signal SS is VCC Level, thus the level (the first trigger pulse) of the 4th output end output of UL/VL/WL driving circuit 104 from low to high, third 1 selection end of the fixing end of switching module 1045 and third switching module 1045 is connected, the fixing end of the 4th switching module 1046 It is connected with 1 selection end of the 4th switching module 1046, the fixing end of the 5th switching module 1047 and the 1 of the 5th switching module 1047 End is selected to be connected, the 5th output end exports low level, and switch module 1049 is in an off state, so that the second output sub-circuit 1042 high level output end (that is, the end P-LO1) and low level output end (that is, the end N-LO1), third export sub-circuit 1043 The height electricity of high level output end (that is, the end P-LO2) and low level output end (that is, the end N-LO2) and the 4th output sub-circuit 1044 Flat output end (that is, the end P-LO3) and low level output end (that is, the end N-LO3) export the voltage of 3V and 0V respectively.

It 2, include that Si IGBT is managed with lower bridge arm switching tube 128 when upper bridge arm switching tube 127, control signal SS is 0 electricity Flat, thus the level (the second trigger pulse) of the 4th output end output of UL/VL/WL driving circuit 104 from high to low, third is cut The 0 selection end for changing the mold fixing end and the third switching module 1045 of block 1045 is connected, the fixing end of the 4th switching module 1046 and 0 selection end of the 4th switching module 1046 is connected, the fixing end of the 5th switching module 1047 is selected with the 0 of the 5th switching module 1047 It selects end to be connected, the 5th output end exports low level, and switch module 1049 is in an off state, so that the second output sub-circuit 1042 High level output end (that is, the end P-LO1) and low level output end (that is, the end N-LO1), third output sub-circuit 1043 height electricity The high level of flat output end (that is, the end P-LO2) and low level output end (that is, the end N-LO2) and the 4th output sub-circuit 1044 is defeated Outlet (that is, the end P-LO3) and low level output end (that is, the end N-LO3) export the voltage of 15V and 0V respectively.

3, when upper bridge arm switching tube 127 and lower bridge arm switching tube 128 include SiC metal-oxide-semiconductor, control signal SS is VCC/2 level, so that the 5th output end of UL/VL/WL driving circuit 104 exports high level, so that switch module 1049 is in Closed state, the fixing end of switch module 1049 are connected with the output end of the first decompression sub-circuit 1050, the output of the 4th output end Low level, 1045 vacant state of third switching module, 1046 vacant state of the 4th switching module and the 5th switching module 1047 are outstanding Dummy status, so that the high level output end (that is, the end P-LO1) and low level output end of the second output sub-circuit 1042 are (that is, N- The end LO1), third output sub-circuit 1043 high level output end (that is, the end P-LO2) and low level output end (that is, N-LO2 End) and the 4th output sub-circuit 1044 high level output end (that is, the end P-LO3) and low level output end (that is, the end N-LO3) The voltage of 20V and 0V is exported respectively.

Figure 16 is please referred to, the electric appliance 1000 of the application embodiment includes the power device of any of the above-described embodiment 100 and processor 200, processor 200 connects power device 100.

In the electric appliance 1000 and power device 100 of the application embodiment, pass through above-mentioned power device 100, Neng Gouti The suitability of high Si IGBT pipe, GaN metal-oxide-semiconductor and SiC metal-oxide-semiconductor, makes Si IGBT pipe, GaN metal-oxide-semiconductor and SiC metal-oxide-semiconductor Technical advantage can be played.Processor 200 connects the controller 10 of power device 100, when user's operation electric appliance 1000 When, processor 200 issues signal to the controller 130 of power device 100, and controller 130 controls control signal SS access the One level, second electrical level or third level, the function of keeping the switching of electric appliance 1000 desired.

Above-mentioned electric appliance 1000 can be air-conditioning, washing machine, refrigerator or electromagnetic oven etc., and power device therein 100 can To realize the function of power device 100 described in preceding sections.

Although embodiments herein has been shown and described above, it is to be understood that above-described embodiment is example Property, it should not be understood as the limitation to the application, those skilled in the art within the scope of application can be to above-mentioned Embodiment is changed, modifies, replacement and variant, and scope of the present application is defined by the claims and their equivalents.

Claims

1. a kind of power device characterized by comprising

Control signal；

Upper bridge arm switching tube and lower bridge arm switching tube；

Upper resistance group and lower resistance group；

It is connected and connect by the upper resistance group the first driving circuit of the upper bridge arm switching tube with the control signal；

It is connected and connect by the lower resistance group the second driving circuit of the lower bridge arm switching tube with the control signal；

The control signal has access to the first level, second electrical level or third level, when control signal access the When one level, the low and high level of first driving circuit and second driving circuit output first voltage range, when described When control signal accesses second electrical level, first driving circuit and second driving circuit export second voltage range Low and high level, when the control signal accesses third level, first driving circuit and second driving circuit are defeated The low and high level of tertiary voltage range out, the first voltage range, the second voltage range and the tertiary voltage range It is different.

2. power device according to claim 1, which is characterized in that the power device further include the end VCC, the end GND and Reference power source end, when connection of the control signal by bonding line and the end VCC, the control signal accesses institute State the first level；When the control signal is connect by bonding line with the end GND, described in the control signal access Second electrical level；When the control signal is connect by bonding line with the reference power source end, the control signal access The third level.

3. power device according to claim 1, which is characterized in that the power device includes controller, the control Input terminal is connect with the controller, and the controller is for exporting first level, the second electrical level or the third Level.

4. power device according to claim 1, which is characterized in that the first voltage range is 0V~3V, described the Two voltage ranges are 0V~15V, and the tertiary voltage range is 0V~20V.

5. power device according to any one of claims 1 to 4, which is characterized in that first driving circuit includes UH Driving circuit, VH driving circuit and WH driving circuit；Second driving circuit includes UL/VL/WL driving circuit；The upper bridge Arm switch pipe includes bridge arm switching tube on first, bridge arm switching tube in bridge arm switching tube and third on second；The lower bridge arm is opened Closing pipe includes the first lower bridge arm switching tube, the second lower bridge arm switching tube and third lower bridge arm switching tube；Wherein,

The control signal is connected with the UH driving circuit, the VH driving circuit and the WH driving circuit, and institute It states UH driving circuit, the VH driving circuit and the WH driving circuit and respectively drives bridge arm switching tube on described first, described Bridge arm switching tube in bridge arm switching tube and the third on second；Bridge arm switching tube on the UH driving circuit and described first It is connected, the VH driving circuit is connected with bridge arm switching tube on described second, bridge arm on the WH driving circuit and the third Switching tube is connected；

The control signal is connected with the UL/VL/WL driving circuit, and UL/VL/WL driving circuit driving described the One lower bridge arm switching tube, the second lower bridge arm switching tube and the third lower bridge arm switching tube, the UL/VL/WL driving electricity Road is connected with the first lower bridge arm switching tube, the second lower bridge arm switching tube and the third lower bridge arm switching tube respectively.

6. power device according to claim 5, which is characterized in that bridge arm switching tube, described second on described first Bridge arm switching tube on upper bridge arm switching tube, the third, the first lower bridge arm switching tube, the second lower bridge arm switching tube and When the third lower bridge arm switching tube includes GaN device, the level of the signal of Xiang Suoshu control signal input is described the One level；Bridge arm switching tube, bridge arm switching tube on described second, bridge arm switching tube in the third, described on described first When first lower bridge arm switching tube, the second lower bridge arm switching tube and the third lower bridge arm switching tube include Si device, to The level of the signal of the control signal input is the second electrical level, bridge arm switching tube, described second on described first Bridge arm switching tube on upper bridge arm switching tube, the third, the first lower bridge arm switching tube, the second lower bridge arm switching tube and When the third lower bridge arm switching tube includes SiC device, the level of the signal of Xiang Suoshu control signal input is described the Three level.

7. power device according to claim 6, which is characterized in that the UH driving circuit, the VH driving circuit or The WH driving circuit includes:

First input sub-circuit, the first input sub-circuit are connected with the control signal, the first input sub-circuit With the first output end, second output terminal, third output end and the 4th output end, wherein when the control signal is first When level, first output end and the second output terminal export trigger pulse, and the third output end output is at the first time The trigger pulse of length, when the control signal is the second electrical level, first output end and second output End output trigger pulse, the third output end export the trigger pulse of the second time span, and the first time length is greater than Second time span, when the control signal is the third level, first output end and second output terminal Trigger pulse is exported, the 4th output end exports the trigger pulse of second time span；

First switch tube, second switch, third switching tube and the 4th switching tube, the first switch tube and first output End is connected, and the second switch is connected with the second output terminal, and the third switching tube is connected with the third output end, 4th switching tube is connected with the 4th output end；

First voltage exports sub-circuit, and the first voltage output sub-circuit is opened with the first switch tube, described second respectively Guan Guan is connected with third switching tube；

Second voltage exports sub-circuit, and the second voltage output sub-circuit is connected with the 4th switching tube；

First output sub-circuit, the first output sub-circuit includes high level output end and low level output end, and described first Output sub-circuit exports sub-circuit with the first voltage respectively and second voltage output sub-circuit is connected.

8. power device according to claim 7, which is characterized in that the first voltage exports sub-circuit and includes:

The latch being connected with the first switch tube and the second switch and voltage reduction module；

First switching module, first switching module are exported with the latch and voltage reduction module, power supply and described first respectively Sub-circuit is connected；

The first latch module being connected with the third switching tube, first latch module carry out first switching module Control, when the first time length is connected in the third switching tube, first switching module is by the latch and decompression Module is connected with the first output sub-circuit so that the output voltage of the latch and voltage reduction module is defeated as the high level The output voltage of outlet, output voltage of the output voltage of the power supply negative terminal as the low level output end；When described When second time span is connected in three switching tubes, first switching module is sub by the power positive end and first output Circuit connection so that the power positive end output voltage of the output voltage as the high level output end, the power supply negative terminal Output voltage of the output voltage as the low level output end.

9. power device according to claim 7, which is characterized in that the second voltage exports sub-circuit and includes:

Boost module；

Second switching module, second switching module are connected with the boost module and the first output sub-circuit respectively；

The second latch module being connected with the 4th switching tube, second latch module carry out second switching module Control, when second time span is connected in the 4th switching tube, first switching module by the boost module and The first output sub-circuit connects so that the output voltage of the boost module is electric as the output at the high level output end Pressure, output voltage of the output voltage of the power supply negative terminal as the low level output end.

10. power device according to claim 8, which is characterized in that the upper resistance group includes that first grid opens electricity Resistance, second grid open resistance, third grid open resistance, first grid shutdown resistance, second grid turn off resistance, third grid Pole turns off resistance, the first grid open resistance, the second grid open resistance and the third grid open resistance One end respectively with the high level output end of the UH driving circuit, the VH driving circuit the high level output end and The high level output end of the WH driving circuit connects, and the first grid open resistance, the second grid open electricity The other end of resistance and the third grid open resistance is opened with the first lower bridge arm switching tube, second lower bridge arm respectively The connection of third lower bridge arm switching tube described in Guan Guanhe；The first grid shutdown resistance, second grid shutdown resistance and institute State one end of third gate turn-off resistance respectively with the low level output end of the UH driving circuit, the VH driving circuit The low level output end connected with the low level output end of the WH driving circuit, first grid shutdown electricity The other end of resistance, second grid shutdown resistance and the third gate turn-off resistance is opened with first lower bridge arm respectively Guan Guan, the second lower bridge arm switching tube are connected with the third lower bridge arm switching tube.

11. power device according to claim 5, which is characterized in that the UL/VL/WL driving circuit includes:

Second input sub-circuit, second input submodule include the first output end, second output terminal, third output end, the Four output ends and the 5th output end, wherein when the control signal is first level, the 4th output end output First trigger pulse, when the control signal is the second electrical level, the 4th output end exports the second trigger pulse, Second trigger pulse and first trigger pulse are reversed, described when the control signal is the third level 5th output end exports trigger pulse；

Boost sub-circuit, and supply voltage is boosted to the tertiary voltage range by the boosting sub-circuit；

It is depressured sub-circuit, the supply voltage is depressurized to first voltage range by the decompression sub-circuit；

Switch module, the switch module are connected with the boosting sub-circuit, and the switch module is by the 5th output end control System；

The to be connected with the second input sub-circuit, the switch module, the decompression sub-circuit and the boosting sub-circuit Three voltage output sub-circuits, wherein when the 4th output end exports first trigger pulse, the third output son electricity Road exports the low and high level signal of the first voltage range, when the 4th output end exports second trigger pulse, The third output sub-circuit exports the low and high level signal of the second voltage range, described in the 5th output end output When trigger pulse, the third output sub-circuit exports the low and high level signal of the tertiary voltage range.

12. power device according to claim 11, which is characterized in that the tertiary voltage exports sub-circuit and includes:

First output end, the second output terminal and the third output end for inputting sub-circuit with described second respectively Connected the second output sub-circuit, third output sub-circuit and the 4th output sub-circuit；

The third being connected respectively with the second output sub-circuit, third output sub-circuit and the 4th output sub-circuit switches mould Block, the 4th switching module and the 5th switching module, the second output sub-circuit, third output sub-circuit and described the Four output sub-circuits include high level output end and low level output end, when the 4th output end output first triggering When pulse, the third switching module, the 4th switching module and the 5th switching module divide the decompression sub-circuit It is other to connect with the second output sub-circuit, third output sub-circuit and the 4th output sub-circuit so that the drop Press the output voltage of sub-circuit as the second output sub-circuit, third output sub-circuit and the 4th output The output voltage at the high level output end of circuit, the output voltage of power supply negative terminal is as the second output sub-circuit, described the The output voltage at the low level output end of three output sub-circuits and the 4th output sub-circuit；When the 4th output end is defeated Out when second trigger pulse, the third switching module, the 4th switching module and the 5th switching module are by institute Power positive end is stated to connect with the second output sub-circuit, third output sub-circuit and the 4th output sub-circuit respectively It connects so that the output voltage of the power positive end exports sub-circuit as described second, the third exports sub-circuit and described The output voltage at the high level output end of the 4th output sub-circuit, the output voltage of the power supply negative terminal is as second output The output voltage at the low level output end of sub-circuit, third output sub-circuit and the 4th output sub-circuit；When described When 5th output end exports the trigger pulse, the third switching module, the 4th switching module and the 5th switching Module by the boosting sub-circuit respectively with the second output sub-circuit, third output sub-circuit and described 4th defeated Sub-circuit connects so that the output voltage of the boosting sub-circuit is as the second output sub-circuit, third output out The output voltage at the high level output end of circuit and the 4th output sub-circuit, the output voltage conduct of the power supply negative terminal The second output sub-circuit, third output sub-circuit and the described 4th export the defeated of the low level output end of sub-circuit Voltage out.

13. power device according to claim 12, which is characterized in that the lower resistance group includes that the 4th grid opens electricity Resistance, the 5th grid open resistance, the 6th grid open resistance, the 4th gate turn-off resistance, the 5th gate turn-off resistance, the 6th grid Pole turns off resistance, the 4th grid open resistance, the 5th grid open resistance and the 6th grid open resistance One end respectively with it is described second output sub-circuit high level output end, the third output sub-circuit high level output end and The high level output end connection of the 4th output sub-circuit, the 4th grid open resistance, the 5th grid open electricity The other end of resistance and the 6th grid open resistance is opened with the first lower bridge arm switching tube, second lower bridge arm respectively The connection of third lower bridge arm switching tube described in Guan Guanhe；The 4th gate turn-off resistance, the 5th gate turn-off resistance and institute The one end for stating the 6th gate turn-off resistance is sub with the low level output end of the second output sub-circuit, third output respectively The low level output end of circuit is connected with the low level output end of the 4th output sub-circuit, the 4th gate turn-off electricity The other end of resistance, the 5th gate turn-off resistance and the 6th gate turn-off resistance is opened with first lower bridge arm respectively Guan Guan, the second lower bridge arm switching tube are connected with the third lower bridge arm switching tube.

14. a kind of electric appliance, which is characterized in that including according to claim 1-13 described in any item power devices.

15. electric appliance according to claim 14, which is characterized in that the electric appliance is air-conditioning.