CN109885934A - Multijunction solar cell knot analysis method, device and electronic equipment - Google Patents
Multijunction solar cell knot analysis method, device and electronic equipment Download PDFInfo
- Publication number
- CN109885934A CN109885934A CN201910130090.9A CN201910130090A CN109885934A CN 109885934 A CN109885934 A CN 109885934A CN 201910130090 A CN201910130090 A CN 201910130090A CN 109885934 A CN109885934 A CN 109885934A
- Authority
- CN
- China
- Prior art keywords
- knot
- solar cell
- multijunction solar
- model
- preset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004458 analytical method Methods 0.000 title claims abstract description 22
- 238000004088 simulation Methods 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 58
- 230000008569 process Effects 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 claims abstract description 27
- 238000009826 distribution Methods 0.000 claims description 24
- 238000003949 trap density measurement Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000004590 computer program Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 claims description 3
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 238000010422 painting Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000008859 change Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 230000008033 biological extinction Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 239000011358 absorbing material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000011712 cell development Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of multijunction solar cell knot analysis method, device and electronic equipments, wherein this method comprises: building multijunction solar cell model；Multijunction solar cell model includes at least one sub- knot；Simulation process is carried out to every height knot of multijunction solar cell model respectively using preset minority carrier lifetime and preset defect parameters, obtains simulation result；Simulation result is exported according to preset simulation result output class and the way of output.The present invention establishes multijunction solar cell model by semiconductor devices simulation software, the electric property variation tendency of each of model knot is obtained by analogue simulation, complicated physical equation is avoided to calculate, improve the accuracy of multijunction solar cell model electric property emulation, and it is emulated by building model, it is in kind without making, by being adjusted to model parameter, obtain a large amount of simulation results, it can be quickly obtained the best epitaxial structure of multijunction solar cell, saved time and cost.
Description
Technical field
The present invention relates to technical field of solar cells, more particularly, to a kind of multijunction solar cell knot analysis method, dress
It sets and electronic equipment.
Background technique
As one of the research frontier of solar cell research, the development of multijunction solar cell is turned with its higher photoelectricity
The favor that efficiency obtains people is changed, but since it is cascaded structure, the overall electric current of device is by single sub- knot minimum current
Influence, and the minority carrier lifetime in son knot influences sub- junction current size, and not only that, multijunction solar cell also can
Since battery extension manufacture craft is horizontal and semiconductor material lattice itself mismatches factor and inside battery is caused to generate defect,
To reduce minority diffusion length, cell output is reduced, causes electrical property to be degenerated and influences the service life, therefore to the sun
The research of battery internal defect is of great significance to multijunction solar cell development.
In multijunction solar cell, currents match (current-matching) analysis is to Guan Chong to multijunction solar cell
The ring wanted, how effectively really to obtain the current value of internal each junction battery is a very big problem, so, how to make
Complete incident light spectrum and complete multi-junction battery structure are organically combined into consideration with a kind of emulation mode, to single son
Junction battery, which carries out simulation analysis, becomes the difficult point of research.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of multijunction solar cell knot analysis method, device and electronics
Equipment is quickly obtained the best epitaxy junction of multijunction solar cell to improve the accuracy of multijunction solar cell electric property emulation
Structure saves time and cost.
In a first aspect, the embodiment of the invention provides a kind of multijunction solar cell knot analysis methods, wherein include: to take
Build multijunction solar cell model；Multijunction solar cell model includes at least one sub- knot；Utilize preset minority carrier lifetime
Simulation process is carried out to every height knot of multijunction solar cell model respectively with preset defect parameters, obtains simulation result；Root
Simulation result is exported according to preset simulation result output class and the way of output.
With reference to first aspect, the embodiment of the invention provides the first possible embodiments of first aspect, wherein more
The build process of connection solar cell model, comprising: believed according to preset thickness, slice width, doping concentration, material component and grid
Breath, builds the device architecture of multijunction solar cell model；Device architecture includes sequentially connected first export area, sub- tie region
With the second export area；According to preset Poisson's equation, Current continuity equation, drift-diffusion equation, carrier concentration heating power
It learns statistical distribution, mobility model, SRH model and inter-band tunneling model and parameter setting is carried out to the device architecture, obtain more
Connection solar cell model.
The possible embodiment of with reference to first aspect the first, the embodiment of the invention provides second of first aspect
Possible embodiment, wherein the first export area includes the first anode and the first cathode；Sub- tie region includes at least one institute
State sub- knot；Second export area includes second plate and the second cathode.
The possible embodiment of second with reference to first aspect, the embodiment of the invention provides the third of first aspect
Possible embodiment, wherein this method further include: when carrying out simulation process to every height knot, remove other than current son knot
Son knot connection the first export area part and the second export area part.
The possible embodiment of with reference to first aspect the first, the embodiment of the invention provides the 4th kind of first aspect
Possible embodiment, wherein the first surface of sub- tie region is provided with optical coating, and the front end transmissivity of optical coating is
95%, rear end transmissivity is 100%.
With reference to first aspect, the embodiment of the invention provides the 5th kind of possible embodiments of first aspect, wherein pre-
If defect parameters include at least one defect parameters, each defect parameters include multiple trap densities and multiple capture cross-sections.
The 5th kind of possible embodiment with reference to first aspect, the embodiment of the invention provides the 6th kind of first aspect
Possible embodiment, wherein carry out simulation process, packet using every height knot of the preset defect parameters to multijunction solar cell
It includes: trap density is fixed, carry out simulation process using multiple capture cross-section antithetical phrase knots；Capture cross-section is fixed,
Simulation process is carried out using multiple trap density antithetical phrase knots.
With reference to first aspect, the embodiment of the invention provides the 7th kind of possible embodiments of first aspect, wherein imitative
True result output class include energy band distribution, light distribution, electron hole distribution, electric field potential distribution, rate of optical absorption be distributed,
At least one of open-circuit voltage, short circuit current, peak power output and transfer efficiency；The way of output include pictorial manner and/
Or text mode.
Second aspect, the embodiment of the present invention also provide a kind of multijunction solar cell knot analytical equipment, wherein include: mould
Type builds module, and for building multijunction solar cell model, multijunction solar cell model includes at least one sub- knot；Emulate mould
Block, for utilizing preset minority carrier lifetime and preset defect parameters respectively to every height of multijunction solar cell model
Knot carries out simulation process, obtains simulation result；Output module, for according to preset simulation result output class and the way of output
Simulation result is exported.
The third aspect, the embodiment of the present invention also provide a kind of electronic equipment, including memory, processor, deposit in memory
Contain the computer program that can be run on a processor, wherein processor realizes above-mentioned first aspect when executing computer program
The step of described method.
The embodiment of the present invention bring it is following the utility model has the advantages that
The embodiment of the invention provides a kind of multijunction solar cell knot analysis method, device and electronic equipments, wherein should
Method includes: to build multijunction solar cell model；Multijunction solar cell model includes at least one sub- knot；Utilize preset minority
Carrier lifetime and preset defect parameters carry out simulation process to every height knot of multijunction solar cell model respectively, are imitated
True result；Simulation result is exported according to preset simulation result output class and the way of output.The embodiment of the present invention is borrowed
It helps semiconductor devices simulation software to establish multijunction solar cell model, the every of multijunction solar cell model is obtained by analogue simulation
The electric property variation tendency of one son knot avoids complicated physical equation and calculates, and improves multijunction solar cell model electricity
Learn the accuracy of performance simulation, meanwhile, emulated by building model, it is in kind without making, by model parameter into
Row adjustment, obtains a large amount of simulation result, so as to be quickly obtained the best epitaxial structure of multijunction solar cell, when having saved
Between and cost.
Other features and advantages of the present invention will illustrate in the following description, alternatively, Partial Feature and advantage can be with
Deduce from specification or unambiguously determine, or by implementing above-mentioned technology of the invention it can be learnt that.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, better embodiment is cited below particularly, and match
Appended attached drawing is closed, is described in detail below.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of flow chart of multijunction solar cell knot analysis method provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of four-junction solar battery model provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram handled current sub- knot provided in an embodiment of the present invention；
Fig. 4 be in a kind of four-junction solar battery model provided in an embodiment of the present invention the sub- junction current voltage JV performance of third with
Minority carrier lifetime change curve；
Fig. 5 be in a kind of four-junction solar battery model provided in an embodiment of the present invention the sub- junction current voltage JV performance of third with
Capture cross-section change curve；
Fig. 6 be in a kind of four-junction solar battery model provided in an embodiment of the present invention the sub- junction current voltage JV performance of third with
Trap density change curve；
Fig. 7 is a kind of emulation matched curve signal of complete four-junction solar battery model structure provided in an embodiment of the present invention
Figure；
Fig. 8 is a kind of structural schematic diagram of multijunction solar cell knot analytical equipment provided in an embodiment of the present invention；
Fig. 9 is the structural schematic diagram of a kind of electronic equipment provided in an embodiment of the present invention.
Icon:
The first export area 1-；2- tie region；The second export area 3-；The 11- first anode；The first cathode of 12-；21-
First son knot；The first tunnel knot of 22-；23- the second son knot；The second tunnel knot of 24-；25- third sub- knot；26- third tunnel knot；
The 4th son knot of 27-；31- second plate；The second cathode of 32-.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with attached drawing to the present invention
Technical solution be clearly and completely described, it is clear that described embodiments are some of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Currently, the research in terms of being emulated to multijunction solar cell is less, and the prior art mostly using it is in kind come
Electrical is carried out to multijunction solar cell, is largely emulated using material object, higher cost, and take time and effort, base
In this, a kind of multijunction solar cell knot analysis method, device and electronic equipment provided in an embodiment of the present invention be can be applied to
In the scene studied the electric property of solar cell.
For convenient for understanding the present embodiment, first to a kind of of multijunction solar cell disclosed in the embodiment of the present invention
Knot analysis method describes in detail.
A kind of flow chart of multijunction solar cell knot analysis method shown in Figure 1, wherein this method specific steps
It is as follows:
Step S102 builds multijunction solar cell model；Multijunction solar cell model includes at least one sub- knot；
APSYS simulation software be can use to build multijunction solar cell model, when building multijunction solar cell model,
The device architecture of multijunction solar cell is first built, then the device architecture to build carries out parameter setting, obtains more knot sun electricity
Pool model.Design of Simulation is carried out using the semiconductor modeling software APSYS of limited element analysis technique, it includes more comprehensive physics
Model is established by establishing mesh grid lattice point, it can be achieved that modeling and analysis to each layer structure of multijunction solar cell, is carried out
Material selection can be set according to actual conditions in numerical analysis, friendly interface, and the physical parameters such as doping concentration, thickness can also be led
Enter actual optical characteristics and electrology characteristic, energy band diagram, incident intensity distribution map, the electron hole pair of final exportable device produce
The data such as raw rate diagram, distribution of electron's density figure, hole concentration distribution map and Current Voltage J-V characteristic curve.
According to preset thickness, slice width, doping concentration, material component and gridding information, multijunction solar cell model is built
Device architecture；Device architecture includes sequentially connected first export area, sub- tie region and the second export area.
Since multijunction solar cell model includes at least one sub- knot, need to carry out using tunnel knot between sub- knot and son knot
Connection, and need to be arranged the first export area and the second export area to guarantee that the photo-generated carrier generated in simulation process can be with
It is flowed out from the first export area and the second export area, is convenient for simulated measurement, so needing reasonable arrangement when building device architecture
Thickness, width, material component, doping concentration of each section etc. divide grid according to the specific demand of each section, obtain
Gridding information can effectively improve the accuracy that device architecture is built according to gridding information.
Further, the first export area includes the first anode and the first cathode；Sub- tie region includes at least one sub- knot；
Second export area includes second plate and the second cathode；When building model, the P doped region point of multijunction solar cell model
It is not connect with the first cathode and the second cathode；N doped region is connect with the first anode and second plate respectively, guarantees more knot sun
The photo-generated carrier of battery model can be flowed out from the electrode connecting with multijunction solar cell model.
After putting up basic device architecture, need to carry out parameter setting for current device structure.
According to energy band distribution, light distribution, the electron hole distribution, electric field electricity of the multijunction solar cell model that emulation needs
Gesture distribution and rate of optical absorption distribution, utilize preset Poisson's equation, Current continuity equation, drift-diffusion equation, carrier
The distribution of concentration thermal dynamics statistics, mobility model, SRH model and inter-band tunneling model carry out parameter setting to device architecture, obtain
To multijunction solar cell model.
Parameter setting is carried out to device architecture using preset equation, model etc., is known using this field solar cell is related
Know and APSYS simulation software can realize that details are not described herein.
For solar cell in actual working environment, often antireflective coating need to be arranged on its surface can produce photoelectric current to reduce
Incident light while increasing the reflection of incident light to photo-generated carrier without contribution in the reflection of battery surface, is improved too with this
The photoelectric conversion efficiency in positive electricity pond；So also light need to be arranged in the first surface of sub- tie region when building solar array
Coating is learned, the front end transmissivity that optical coating is arranged is 95%, and rear end transmissivity is 100%, reaches antireflective coating with this
Effect, while reducing corresponding calculation amount.
Step S104, using preset minority carrier lifetime and preset defect parameters respectively to multijunction solar cell mould
Every height knot of type carries out simulation process, obtains simulation result；
When carrying out simulation process to every height knot, the first leading-out zone of the son knot connection first other than the current son knot of removal
Domain part and the second export area part, so that N doped region and P doped region that anode and cathode is just tied in current son,
Guarantee that the photo-generated carrier of current son knot is flowed out from coupled electrode, the photo-generated carrier of minor knot is fixed.
In order to be fitted multijunction solar cell model in the experimental measurements by predose, the first electric current of analysis knot
The trend that voltage curve is changed by minority carrier lifetime, then the i-v curve of analysis knot is become by defect parameters
The trend of change.
By constantly changing minority carrier lifetime, open circuit electricity of the current son knot under different minority carrier lifetimes is obtained
The simulation results such as pressure, short circuit current, peak power output and transfer efficiency.
In SRH is compound, deep energy level defect is related with minority carrier lifetime, and minority carrier lifetime and defect cause
Trap density it is related with capture cross-section.
Preset defect parameters include at least one defect parameters, and each defect parameters include multiple trap densities and multiple
Capture cross-section.
It is single in consideration when carrying out simulation process using every height knot of the preset defect parameters to multijunction solar cell
In the case where trap, trap density is fixed, simulation process is carried out to current sub- knot using multiple capture cross-sections, is worked as
The simulation results such as open-circuit voltage, short circuit current, peak power output and transfer efficiency of the preceding sub- knot under different capture cross-sections；So
Capture cross-section is fixed afterwards, simulation process is carried out to current sub- knot using multiple trap densities, obtains current son knot not
With simulation results such as open-circuit voltage, short circuit current, peak power output and transfer efficiencies under trap density.
Step S106 exports simulation result according to preset simulation result output class and the way of output.
The simulation result finally exported comprises more than open-circuit voltage, short circuit current, the maximum work output that above-mentioned emulation obtains
The simulation results such as rate and transfer efficiency also include energy band distribution, light distribution, electron hole distribution, electric field potential distribution and light
The supplemental characteristics such as absorption rate distribution；The data class for finally needing to export can be determined according to demand；Simulation result is last
The mode of output can be more intuitive pictorial manner, be also possible to more detailed text mode, be also possible to adopt simultaneously
It is exported with both modes.
The embodiment of the invention provides a kind of multijunction solar cell knot analysis method, this method is by building more knot sun
Battery model；Multijunction solar cell model includes at least one sub- knot；Using preset minority carrier lifetime and it is preset lack
Sunken parameter carries out simulation process to every height knot of multijunction solar cell model respectively, obtains simulation result；According to preset imitative
True result output class and the way of output export simulation result.The embodiment of the present invention is by semiconductor devices simulation software
Multijunction solar cell model is established, is become by the electric property that analogue simulation obtains each height knot of multijunction solar cell model
Change trend avoids complicated physical equation and calculates, improves the accuracy of multijunction solar cell model electric property emulation, together
When, it is emulated by building model, it is in kind without making, by being adjusted to model parameter, largely emulated
As a result, time and cost is greatly saved so as to be quickly obtained the best epitaxial structure of multijunction solar cell.
Corresponding to foregoing invention embodiment, the embodiment of the present invention is implemented foregoing invention by taking four-junction solar battery model as an example
Example is described in detail, in which:
When building four-junction solar battery model, as shown in Fig. 2, including sequentially connected first export area 1, sub- tie region
2 and second export area 3, the first export area includes the first anode 11 and the first cathode 12；Sub- tie region includes the first son knot
21, the first tunnel knot 22, the second sub- knot 23, the second tunnel knot 24, the sub- knot 25 of third, third tunnel knot 26 and the 4th sub- knot 27；
Second export area includes second plate 31 and the second cathode 32.
The width that the first export area 1 and the second export area 3 is arranged is 0.5cm, and the width of sub- tie region 2 is 5cm,
The structure of four-junction solar battery model is set are as follows: GaInP/GaAs/In0.3Ga0.7As/In0.58Ga0.42As, the first sub- knot 21 are
GaInP, the second sub- knot 23 are GaAs, and the sub- knot 25 of third is In0.3Ga0.7As, the 4th sub- knot 27 are In0.58Ga0.42As；Every height
Knot all includes sequentially connected Window layer, emission layer, base area and back electric field, is integrally emulated to multijunction solar cell model
When, the first cathode connect the bottom that entire solar array is covered collectively as the back electrode of solar array with the second cathode
Face, still, when every height knot to multijunction solar cell model emulates, the first cathode is located at the second cathode works as
The two sides of preceding sub- knot.
When being emulated, the optical parameter of each height knot absorbing material layer only considers the refraction under different lambda1-wavelengths
Rate n and extinction coefficient k, presets the refractive index and extinction coefficient of every height knot, and setting the first son knot 21GaInP material absorbs
The refractive index n of layer is 1.94~4.67, and extinction coefficient k is 0~1.15；The refraction of second son knot 23GaAs absorbing material layer is set
Rate n is 3.53~4.50, and extinction coefficient k is 0~0.60；Third knot 25In is set0.3Ga0.7The refractive index of As absorbing material layer
N is 2.07~4.80, and extinction coefficient k is 0~0.35；4th son knot 27In is set0.58Ga0.42The refraction of 10 absorbing material layer of As
Rate n is 1.12~4.48, and extinction coefficient k is 0~1.29.
When being emulated, incident ray is from the incidence of four-junction solar battery model top, successively by the first sub- knot 21, the
One tunnel knot 22, the second sub- knot 23, the second tunnel knot 24, the sub- knot 25 of third, third tunnel knot 26 and the 4th sub- knot 27, using pre-
If minority carrier lifetime and preset defect parameters simulation process successively is carried out to every height knot, as shown in figure 3, to working as
When preceding sub- knot carries out simulation process, the first export area part and the second leading-out zone of the son knot connection other than current son knot are removed
Domain part, the first cathode and the second cathode are located at the two sides of current son knot.
For carrying out simulation process to the sub- knot of third 25, minority carrier lifetime and default defect parameters are preset to utilizing
The process that antithetical phrase knot carries out simulation process is described in detail.
Presetting minority carrier (the referred to as few son) service life is 0.3ns, 0.5ns, 1.0ns, 10ns and 100ns, is obtained
The sub- junction current voltage JV performance of third as shown in Figure 4 is with minority carrier lifetime change curve.
By taking a trap as an example, the trap density for fixing the trap in advance is 1 × 1021m-3, the capture cross-section point of the trap
It is not set as 1 × 10-18m2、1×10-17m2、1×10-16m2、5×10-16m2With 10 × 10-16m2, obtain third as shown in Figure 5
Sub- junction current voltage JV performance is with capture cross-section change curve；Then the capture cross-section for fixing the trap is 1 × 10-17m2, should
The trap density of trap is respectively set to 1 × 1021m-3、5×1021m-3、10×1021m-3With 100 × 1021m-3, obtain such as Fig. 6
Shown in the sub- junction current voltage JV performance of third with trap density change curve.
After all carrying out simulation process to every height knot, the simulation result of each height knot is fitted, obtains complete four
The emulation fitting result of connection solar cell model structure, as shown in fig. 7, first son knot 21GaInP trap density be 3 ×
1021m-3, capture cross-section is fixed as 1 × 10-17m2；The trap density of second son knot 23GaAs is 2.6 × 1021m-3, capture cross-section
It is fixed as 1 × 10-17m2；Third sub- knot 25In0.3Ga0.7The trap density of As is 2.6 × 1021m-3, capture cross-section is fixed as 1 ×
10-17m2；4th son knot 27In0.58Ga0.42The trap density of As is 1 × 1021m-3, capture cross-section is fixed as 1 × 10-17m2；Due to
Simulation result in the present embodiment is current density 15.669mA/cm2, voltage 3.2744V；The electric current that actual experiment measurement obtains
Density is 0~3.2768mA/cm2, voltage is 15.69~0V；The error of simulation result and experimental result is respectively 0.11% He
0.07%, it is known that, multijunction solar cell knot analysis method provided by the embodiment of the present invention can effectively improve more knot sun
The accuracy of battery model electric property emulation.
The embodiment of the present invention can also obtain under different parameters state by adjusting the parameters of multijunction solar cell model
Multijunction solar cell model, and then a large amount of simulation result is obtained, so as to be quickly obtained the best of multijunction solar cell
Epitaxial structure has saved time and cost.
Corresponding to foregoing invention embodiment, the embodiment of the invention also provides a kind of multijunction solar cell knot analytical equipments
Structural schematic diagram, as shown in Figure 8, wherein the device includes:
Model buildings module 80, for building multijunction solar cell model, multijunction solar cell model includes at least one
Son knot；
Emulation module 81, for tying the sun to respectively using preset minority carrier lifetime and preset defect parameters more
Every height knot of battery model carries out simulation process, obtains simulation result；
Output module 82, it is defeated for being carried out according to preset simulation result output class and the way of output to simulation result
Out.
Multijunction solar cell knot analytical equipment provided in an embodiment of the present invention, with more knot sun provided by the above embodiment
Battery knot analysis method technical characteristic having the same reaches identical technology so also can solve identical technical problem
Effect.
The embodiment of the invention also provides a kind of electronic equipment, as shown in figure 9, electronic equipment 9 includes memory 91, processing
Device 92, the computer program that can be run on processor 92 is stored in memory 91, and processor executes real when computer program
The step of method that existing foregoing invention embodiment provides.
Referring to Fig. 9, electronic equipment further include: bus 93 and communication interface 94, processor 92, communication interface 94 and memory
91 are connected by bus 93；Processor 92 is for executing the executable module stored in memory 91, such as computer program.
Wherein, memory 91 may include high-speed random access memory (RAM, Random Access Memory),
It may further include nonvolatile memory (non-volatile memory), for example, at least a magnetic disk storage.By at least
One communication interface 94 (can be wired or wireless) realizes the communication between the system network element and at least one other network element
Connection, can be used internet, wide area network, local network, Metropolitan Area Network (MAN) etc..
Bus 93 can be isa bus, pci bus or eisa bus etc..It is total that bus can be divided into address bus, data
Line, control bus etc..Only to be indicated with a four-headed arrow in Fig. 9, it is not intended that an only bus or one convenient for indicating
The bus of seed type.
Wherein, memory 91 is for storing program, and processor 92 executes program after receiving and executing instruction, and aforementioned
Method performed by invention any embodiment can be applied in processor 92, or be realized by processor 92.
Processor 92 may be a kind of IC chip, the processing capacity with signal.During realization, above-mentioned side
Each step of method can be completed by the integrated logic circuit of the hardware in processor 92 or the instruction of software form.Above-mentioned
Processor 92 can be general processor, including central processing unit (Central Processing Unit, abbreviation CPU), network
Processor (Network Processor, abbreviation NP) etc.；It can also be digital signal processor (Digital Signal
Processing, abbreviation DSP), specific integrated circuit (Application Specific Integrated Circuit, referred to as
ASIC), ready-made programmable gate array (Field-Programmable Gate Array, abbreviation FPGA) or other are programmable
Logical device, discrete gate or transistor logic, discrete hardware components.It may be implemented or execute in the embodiment of the present invention
Disclosed each method, step and logic diagram.General processor can be microprocessor or the processor is also possible to appoint
What conventional processor etc..The step of method in conjunction with disclosed in the embodiment of the present invention, can be embodied directly in hardware decoding processing
Device executes completion, or in decoding processor hardware and software module combination execute completion.Software module can be located at
Machine memory, flash memory, read-only memory, programmable read only memory or electrically erasable programmable memory, register etc. are originally
In the storage medium of field maturation.The storage medium is located at memory 91, and processor 92 reads the information in memory 91, in conjunction with
Its hardware completes the step of above method.
The embodiment of the present invention also provide it is a kind of with processor can be performed non-volatile program code it is computer-readable
Medium, program code make processor execute the method as described in above-mentioned inventive embodiments.
The computer-readable medium of the non-volatile program code provided in an embodiment of the present invention that can be performed with processor,
It is reached with inventive embodiments provided by the above embodiment technical characteristic having the same so also can solve identical technical problem
To identical technical effect.
Computer program product provided by the embodiment of the present invention, including storing the executable non-volatile journey of processor
The computer readable storage medium of sequence code, the instruction that program code includes can be used for executing previous methods as described in the examples
Method, specific implementation can be found in embodiment of the method, and details are not described herein.
It, can be with if the function is realized in the form of SFU software functional unit and when sold or used as an independent product
It is stored in a computer readable storage medium.Based on this understanding, technical solution of the present invention is substantially in other words
The part of the part that contributes to existing technology or the technical solution can be embodied in the form of software products, the meter
Calculation machine software product is stored in a storage medium, including some instructions are used so that a computer equipment (can be a
People's computer, server or network equipment etc.) it performs all or part of the steps of the method described in the various embodiments of the present invention.
And storage medium above-mentioned includes: that USB flash disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), arbitrary access are deposited
The various media that can store program code such as reservoir (RAM, Random Access Memory), magnetic or disk.
Finally, it should be noted that embodiment described above, only a specific embodiment of the invention, to illustrate the present invention
Technical solution, rather than its limitations, scope of protection of the present invention is not limited thereto, although with reference to the foregoing embodiments to this hair
It is bright to be described in detail, those skilled in the art should understand that: anyone skilled in the art
In the technical scope disclosed by the present invention, it can still modify to technical solution documented by previous embodiment or can be light
It is readily conceivable that variation or equivalent replacement of some of the technical features；And these modifications, variation or replacement, do not make
The essence of corresponding technical solution is detached from the spirit and scope of technical solution of the embodiment of the present invention, should all cover in protection of the invention
Within the scope of.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of multijunction solar cell knot analysis method characterized by comprising
Build multijunction solar cell model；The multijunction solar cell model includes at least one sub- knot；
Using preset minority carrier lifetime and preset defect parameters respectively to each of described multijunction solar cell model
Son knot carries out simulation process, obtains simulation result；
The simulation result is exported according to preset simulation result output class and the way of output.
2. the method according to claim 1, wherein the build process of the multijunction solar cell model, comprising:
According to preset thickness, slice width, doping concentration, material component and gridding information, the multijunction solar cell model is built
Device architecture；The device architecture includes sequentially connected first export area, sub- tie region and the second export area；
Be distributed according to preset Poisson's equation, Current continuity equation, drift-diffusion equation, carrier concentration thermal dynamics statistics,
Mobility model, SRH model and inter-band tunneling model carry out parameter setting to the device architecture, obtain more knot sun electricity
Pool model.
3. according to the method described in claim 2, it is characterized in that, first export area includes the first anode and the first yin
Pole；The sub- tie region includes at least one described sub- knot；Second export area includes second plate and the second cathode.
4. according to the method described in claim 3, it is characterized in that, the method also includes:
When carrying out simulation process to each sub- knot, the first export area portion of the son knot connection other than current son knot is removed
Divide and the second export area part.
5. according to the method described in claim 2, it is characterized in that, the first surface of the sub- tie region is provided with optics painting
Layer, the front end transmissivity of the optical coating are 95%, and rear end transmissivity is 100%.
6. the method according to claim 1, wherein the preset defect parameters include at least one defect ginseng
Number, each defect parameters include multiple trap densities and multiple capture cross-sections.
7. according to the method described in claim 6, it is characterized in that, using preset defect parameters to the multijunction solar cell
Every height knot carry out simulation process, comprising:
The trap density is fixed, simulation process is carried out to the sub- knot using the multiple capture cross-section；
The capture cross-section is fixed, simulation process is carried out to the sub- knot using the multiple trap density.
8. the method according to claim 1, wherein the simulation result output class includes energy band distribution, light
Strong distribution, electron hole distribution, electric field potential distribution, rate of optical absorption distribution, open-circuit voltage, short circuit current, maximum work output
At least one of rate and transfer efficiency；
The way of output includes pictorial manner and/or text mode.
9. a kind of multijunction solar cell knot analytical equipment characterized by comprising
Model buildings module, for building multijunction solar cell model, the multijunction solar cell model includes at least one son
Knot；
Emulation module, for electric to more knot sun respectively using preset minority carrier lifetime and preset defect parameters
Every height knot of pool model carries out simulation process, obtains simulation result；
Output module, for being exported according to preset simulation result output class and the way of output to the simulation result.
10. a kind of electronic equipment, including memory, processor, it is stored with and can runs on the processor in the memory
Computer program, which is characterized in that the processor realizes the claims 1 to 8 when executing the computer program
The step of method described in one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910130090.9A CN109885934B (en) | 2019-02-21 | 2019-02-21 | Multi-junction solar cell sub-junction analysis method and device and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910130090.9A CN109885934B (en) | 2019-02-21 | 2019-02-21 | Multi-junction solar cell sub-junction analysis method and device and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109885934A true CN109885934A (en) | 2019-06-14 |
| CN109885934B CN109885934B (en) | 2024-01-09 |
Family
ID=66928732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910130090.9A Active CN109885934B (en) | 2019-02-21 | 2019-02-21 | Multi-junction solar cell sub-junction analysis method and device and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109885934B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090014061A1 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSb solar cells grown by molecular beam epitaxy |
| CN101696942A (en) * | 2009-10-16 | 2010-04-21 | 厦门大学 | Multi-junction solar cell and AC electroluminescence testing method and device of each sub cell |
| US20100186804A1 (en) * | 2009-01-29 | 2010-07-29 | Emcore Solar Power, Inc. | String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers |
| WO2012037379A2 (en) * | 2010-09-15 | 2012-03-22 | Solarity, Inc. | Single and multi-junction light and carrier collection management cells |
| US20130048063A1 (en) * | 2011-08-26 | 2013-02-28 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys |
| CN104409526A (en) * | 2014-12-03 | 2015-03-11 | 云南师范大学 | Highly-efficient silicon-based thin film multi-junction solar cell based on tunnel recombination reflectors (TRRs) |
| CN106339561A (en) * | 2016-09-05 | 2017-01-18 | 上海空间电源研究所 | Numerical simulation method of compound multijunction solar cell |
| CN106529012A (en) * | 2016-10-28 | 2017-03-22 | 上海空间电源研究所 | Adaptive grid moving method for complex compound semiconductor devices |
| CN106649216A (en) * | 2016-10-28 | 2017-05-10 | 上海空间电源研究所 | File conversion method for compound semiconductor device growing program |
-
2019
- 2019-02-21 CN CN201910130090.9A patent/CN109885934B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090014061A1 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSb solar cells grown by molecular beam epitaxy |
| US20100186804A1 (en) * | 2009-01-29 | 2010-07-29 | Emcore Solar Power, Inc. | String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers |
| CN101696942A (en) * | 2009-10-16 | 2010-04-21 | 厦门大学 | Multi-junction solar cell and AC electroluminescence testing method and device of each sub cell |
| WO2012037379A2 (en) * | 2010-09-15 | 2012-03-22 | Solarity, Inc. | Single and multi-junction light and carrier collection management cells |
| US20130048063A1 (en) * | 2011-08-26 | 2013-02-28 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Multijunction Solar Cells Lattice Matched to InP Using Sb-Containing Alloys |
| CN104409526A (en) * | 2014-12-03 | 2015-03-11 | 云南师范大学 | Highly-efficient silicon-based thin film multi-junction solar cell based on tunnel recombination reflectors (TRRs) |
| CN106339561A (en) * | 2016-09-05 | 2017-01-18 | 上海空间电源研究所 | Numerical simulation method of compound multijunction solar cell |
| CN106529012A (en) * | 2016-10-28 | 2017-03-22 | 上海空间电源研究所 | Adaptive grid moving method for complex compound semiconductor devices |
| CN106649216A (en) * | 2016-10-28 | 2017-05-10 | 上海空间电源研究所 | File conversion method for compound semiconductor device growing program |
Non-Patent Citations (2)
| Title |
|---|
| 玛丽娅？黑尼等: "1 MeV电子辐照对InGaAsP/InGaAs双结电池电学参数的影响", 《现代应用物理》 * |
| 胡建民等: "GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应", 《物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109885934B (en) | 2024-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liang et al. | A review of crystalline silicon bifacial photovoltaic performance characterisation and simulation | |
| Fell et al. | Input parameters for the simulation of silicon solar cells in 2014 | |
| Ma et al. | An improved and comprehensive mathematical model for solar photovoltaic modules under real operating conditions | |
| Mäki et al. | Effect of photovoltaic generator components on the number of MPPs under partial shading conditions | |
| Hashmi et al. | Study of the enhancement of the efficiency of the monocrystalline silicon solar cell by optimizing effective parameters using PC1D simulation | |
| Onno et al. | Predicted power output of silicon-based bifacial tandem photovoltaic systems | |
| Bhattacharya et al. | Towards 30% power conversion efficiency in thin-silicon photonic-crystal solar cells | |
| CN111275160B (en) | Photovoltaic array parameter identification method based on population optimization improved particle swarm algorithm | |
| CN102682222A (en) | Continuous tide calculation method based on wind power fluctuation rule | |
| CN105932673B (en) | A kind of external network equivalent method of the large-scale interconnected power system containing extensive new energy | |
| CN107066760A (en) | A kind of photovoltaic module parameter identification method | |
| Rodríguez‐Gallegos et al. | PV‐GO: A multiobjective and robust optimization approach for the grid metallization design of Si‐based solar cells and modules | |
| Pachauri et al. | Su-Do-Ku Game Puzzle for Improving Shade dispersion factor on PV Array Systems under PSCs: Experimental Validation | |
| Batool et al. | Stochastic modeling of the output power of photovoltaic generators in various weather conditions | |
| CN108008633A (en) | Irradiation level comprising a variety of Changes in weather and photovoltaic module coordinate incidence relation method for building up | |
| CN113555908B (en) | Intelligent power distribution network energy storage optimal configuration method | |
| Parisi et al. | Photovoltaic module characteristics from CIGS solar cell modelling | |
| CN109885934A (en) | Multijunction solar cell knot analysis method, device and electronic equipment | |
| Ekins-Daukes et al. | Syracuse-a multi-junction concentrator system computer model | |
| Lu et al. | Evolution of the shape parameters of photovoltaic module as a function of temperature and irradiance: New method of performance prediction without setting reference conditions | |
| CN110782024A (en) | Photo-thermal electric field solar direct normal radiation prediction method based on convolutional neural network | |
| CN115600503A (en) | Multi-junction compound battery model parameter optimization method based on simplex-simulated annealing method | |
| CN108803769A (en) | The maximum power output control method and system of photovoltaic array | |
| Khoo et al. | Optimizing the front electrode of silicon-wafer-based solar cells and modules | |
| Jha et al. | Effect of varying temperature on different PV array configurations under partial shading condition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |