CN109841714A - Vertical structure near ultraviolet light emitting diode and preparation method thereof - Google Patents
Vertical structure near ultraviolet light emitting diode and preparation method thereof Download PDFInfo
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- CN109841714A CN109841714A CN201910018370.0A CN201910018370A CN109841714A CN 109841714 A CN109841714 A CN 109841714A CN 201910018370 A CN201910018370 A CN 201910018370A CN 109841714 A CN109841714 A CN 109841714A
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Abstract
The present invention relates to illumination, display and optical communication fields more particularly to a kind of vertical structure near ultraviolet light emitting diode and preparation method thereof.The vertical structure near ultraviolet light emitting diode, comprising: conductive substrates, the conductive substrates have first surface and the second surface opposite with the first surface；Metallic reflector is located at the first surface；Nitride epitaxial layer is located at the metallic reflection layer surface, and including p-type GaN layer, quantum well layer, preparation layer and the N-type AlGaN layer being sequentially stacked along the direction perpendicular to the conductive substrates, the thickness of the nitride epitaxial layer is less than the wavelength of black light；N-type electrode is located at N-type AlGaN layer surface；P-type electrode is located at the second surface.The present invention proposes the absorption loss for reducing LED internal, and light extraction efficiency is greatly improved.
Description
Technical field
The present invention relates to illumination, display and optical communication field more particularly to a kind of vertical structure near ultraviolet light emitting diodes
And preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode, LED) has many advantages, such as that small in size, high-efficient, the service life is long,
Illumination, display and optical communication field are with a wide range of applications.Traditional light emitting diode is using sapphire as growth substrates.So
And since Sapphire Substrate is non-conductive, so traditional light emitting diode is usually to use electrode in the transverse structure of the same side.
This transverse structure at least has the shortcomings that following two aspect: on the one hand, electric current lateral flow Unequal distance in N-type layer is deposited
In electric current congestion phenomenon, causes LED device local pyrexia amount higher, influence device performance；On the other hand, sapphire
The thermal conductivity of substrate is poor, limits the heat dissipation of LED device, influences the service life of LED device.In order to
, there is light emitting diode with vertical structure in the prior art in the defect for overcoming lateral light emitting diode device.
However, due to the limitation of thick film, there are many optical constraints modes in existing light emitting diode with vertical structure
(Confined Mode).When electron injection, light emitting diode with vertical structure shine, most of emergent light can be limited in hair
In the thick film of optical diode epitaxial layer, causes transmission in film, absorbs, greatly reduce the light extraction efficiency of light emitting diode.
Therefore, how to avoid the thickness of LED device to the constraint of emergent ray, to improve light emitting diode
Light extraction efficiency is a technical problem to be solved urgently.
Summary of the invention
Vertical structure near ultraviolet light emitting diode of the present invention and preparation method thereof, for solving existing near ultraviolet luminous two
The low problem of pole pipe light extraction efficiency.
To solve the above-mentioned problems, the present invention provides a kind of vertical structure near ultraviolet light emitting diodes, comprising:
Conductive substrates, the conductive substrates have first surface and the second surface opposite with the first surface；
Metallic reflector is located at the first surface；
Nitride epitaxial layer, be located at the metallic reflection layer surface, including along perpendicular to the conductive substrates direction according to
The thickness of secondary stacked p-type GaN layer, quantum well layer, preparation layer and N-type AlGaN layer, the nitride epitaxial layer is less than near ultraviolet
The wavelength of light；
N-type electrode is located at N-type AlGaN layer surface；
P-type electrode is located at the second surface.
Preferably, the thickness of the nitride epitaxial layer is in 300nm or less.
Preferably, further include NiSn bonded layer between the conductive substrates and the metallic reflector.
Preferably, the vertical structure near ultraviolet light emitting diode is in step-like structure；Under the step-like structure includes
Step and the top bar being made of the nitride epitaxial layer；It is described to get out of a predicament or an embarrassing situation including the P-type electrode, the conductive substrates
With the metallic reflector, and described get out of a predicament or an embarrassing situation protrudes from the top bar along the direction for being parallel to the conductive substrates.
Preferably, the p-type GaN layer with a thickness of 80nm~100nm, the quantum well layer with a thickness of 98nm~
118nm, the preparation layer with a thickness of 95nm~115nm.
To solve the above-mentioned problems, the present invention also provides a kind of preparation sides of vertical structure near ultraviolet light emitting diode
Method includes the following steps:
A growth substrates and a conductive substrates are bonded, the growth substrates surface has nitride epitaxial layer and metallic reflection
Layer, the nitride epitaxial layer include buffer layer, the undoped GaN being sequentially stacked along the direction perpendicular to the growth substrates
Layer, N-type AlGaN layer, preparation layer, quantum well layer, p-type GaN layer, the metallic reflector are located at p-type GaN layer surface；Institute
Stating conductive substrates includes first surface and the second surface opposite with the first surface, and the second surface has p-type electricity
Pole；
Remove the growth substrates；
The nitride epitaxial layer is etched, removes the buffer layer and the undoped GaN layer, and the N-type is thinned
AlGaN layer, so that the thickness of the remaining nitride epitaxial layer is less than the wavelength of black light；
N-type electrode is formed in remaining N-type AlGaN layer surface.
Preferably, the thickness of the remaining nitride epitaxial layer is in 300nm or less.
Preferably, a growth substrates are bonded and the specific steps of a conductive substrates include:
The first NiSn bonded layer is formed in the metallic reflection layer surface；
The 2nd NiSn bonded layer is formed in the first surface of the conductive substrates；
It is bonded the first NiSn bonded layer and the 2nd NiSn bonded layer.
Preferably, the specific steps for etching the nitride epitaxial layer include:
The nitride epitaxial layer is etched to the N-type AlGaN layer, removes the buffer layer and the undoped GaN
Layer, and the N-type AlGaN layer is thinned, so that the thickness of the remaining nitride epitaxial layer is less than the wavelength of black light；
Device area is defined in the remaining nitride epitaxial layer；
The remaining nitride epitaxial layer around the device area is etched to the metallic reflector, forms step
Shape structure；The step-like structure includes getting out of a predicament or an embarrassing situation and being made of the remaining nitride epitaxial layer in device area
Top bar；It is described to get out of a predicament or an embarrassing situation including the P-type electrode, the conductive substrates and the metallic reflector, and the edge of getting out of a predicament or an embarrassing situation
The direction for being parallel to the conductive substrates protrudes from the top bar.
Preferably, the p-type GaN layer with a thickness of 80nm~100nm, the quantum well layer with a thickness of 98nm~
118nm, the preparation layer with a thickness of 95nm~115nm.
Vertical structure near ultraviolet light emitting diode provided by the invention and preparation method thereof, since device uses vertical junction
Structure improves electrical pumping efficiency；The thickness of nitride epitaxial layer is set smaller than to the wavelength of black light simultaneously, so that described
The limitation of the unfettered mode of vertical structure near ultraviolet light emitting diode reduces and is even a cancellation light emitting diode emergent ray
Transmission inside nitride epitaxial layer reduces absorbed inside loss, so that the light extraction efficiency of light emitting diode significantly mentions
It is high；Meanwhile the setting of metallic reflector further enhances the light extraction efficiency of light emitting diode.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of vertical structure near ultraviolet light emitting diode in the specific embodiment of the invention；
Attached drawing 2 is the preparation method flow chart of vertical structure near ultraviolet light emitting diode in the specific embodiment of the invention；
Attached drawing 3A-3G be in the specific embodiment of the invention during preparing vertical structure near ultraviolet light emitting diode
Main technique schematic cross-section.
Specific embodiment
With reference to the accompanying drawing to the specific of vertical structure near ultraviolet light emitting diode provided by the invention and preparation method thereof
Embodiment elaborates.
Present embodiment provides a kind of vertical structure near ultraviolet light emitting diode, and attached drawing 1 is of the invention specific real
Apply the structural schematic diagram of vertical structure near ultraviolet light emitting diode in mode.As shown in Figure 1, present embodiment offer is hung down
Straight structure near ultraviolet light emitting diode, comprising:
Conductive substrates 10, the conductive substrates 10 have first surface and second table opposite with the first surface
Face；
Metallic reflector 11 is located at the first surface；
Nitride epitaxial layer is located at 11 surface of metallic reflector, including along the side perpendicular to the conductive substrates 10
To p-type GaN layer 12, quantum well layer 13, preparation layer 18 and the N-type AlGaN layer 14 being sequentially stacked, the thickness of the nitride epitaxial layer
Degree is less than the wavelength of black light；
N-type electrode 15 is located at 14 surface of N-type AlGaN layer；
P-type electrode 16 is located at the second surface.
Specifically, the wave-length coverage for the black light that the vertical structure near ultraviolet light emitting diode issues is 380nm
~400nm.The quantum well layer 13 can be InGaN/GaN quantum well layer.The conductive substrates 10 can be metal material
Substrate, or Si substrate, those skilled in the art can select according to actual needs.In present embodiment,
The conductive substrates 10 are preferably the Si substrate of crystal orientation 100.The material of the metallic reflector 11 can be one of nickel, silver
Or the alloy being made of the two.The metallic reflector 11 forms Ohmic contact (electrical connection) with the p-type GaN layer 12, institute
It states conductive substrates 10 and the metallic reflector 11 is in electrical contact, the P-type electrode 16 and 10 Ohmic contact of conductive substrates
(electrical connection).The material of the preparation layer 18 can be GaN or AlGaN.The N-type electrode 15 and the P-type electrode 16
Material can be chromium, platinum or gold.
In present embodiment, the N-type electrode 15 is located at the opposite of the conductive substrates 10 with the P-type electrode 16
Two sides, electric current almost all flows through the nitride epitaxial layer along the direction perpendicular to the conductive substrates 10, almost without cross
To the electric current of flowing, electrical pumping efficiency is improved.The thickness of nitride epitaxial layer is set smaller than the vertical structure simultaneously
The wavelength of the black light of near ultraviolet light emitting diode transmitting, so that the vertical structure near ultraviolet light emitting diode is unfettered
The limitation of mode reduces biography of the near ultraviolet light for being even a cancellation light emitting diode sending inside nitride epitaxial layer
It is defeated, absorbed inside loss is reduced, so that the light extraction efficiency of light emitting diode increases substantially.In addition, the metallic reflector
11 setting reduces light losing, to further enhance the light extraction efficiency of light emitting diode.
In order to further increase the light extraction efficiency of the vertical structure near ultraviolet light emitting diode, it is preferred that the nitridation
The thickness of object epitaxial layer is in 300nm or less.At this point, the thickness of the nitride epitaxial layer is far smaller than the light emitting diode hair
The wavelength of near ultraviolet light out, thus the significantly more efficient limitation for avoiding restriction mode to light emitting diode light extraction efficiency.
Preferably, the vertical structure near ultraviolet light emitting diode further includes being located at the conductive substrates 10 and the metal
NiSn bonded layer 17 between reflecting layer 11.
The vertical structure near ultraviolet light emitting diode is bonded to obtain by conductive substrates 10 with growth substrates, the bonded layer
The first NiSn bonded layer on 17 first surface by being located at the conductive substrates 10 is bonded with the growth substrates are located at
The 2nd NiSn bonded layer on face bonds together to form.
Preferably, the vertical structure near ultraviolet light emitting diode is in step-like structure；Under the step-like structure includes
Step and the top bar being made of the nitride epitaxial layer；It is described to get out of a predicament or an embarrassing situation including the P-type electrode 16, the conductive liner
Bottom 10 and the metallic reflector 11, and described get out of a predicament or an embarrassing situation protrudes from described appear on the stage along the direction for being parallel to the conductive substrates 10
Rank.
Specifically, as shown in Figure 1, being sequentially stacked along the y axis in the p-type on 11 surface of metallic reflector
GaN layer 12, the quantum well layer 13, the preparation layer 18 and the N-type AlGaN layer 14 constitute the top bar, along the y axis
The P-type electrode 16 that is sequentially stacked, the conductive substrates 10 and the metallic reflector 11 constitute it is described get out of a predicament or an embarrassing situation, under described
Step protrudes from the top bar along the x axis, i.e., the described top bar be convexly equipped in the surface of getting out of a predicament or an embarrassing situation partial region, not by
The surface of getting out of a predicament or an embarrassing situation of the top bar covering exposes the metallic reflector 11.By forming the step-like structure,
Passivation layer is formed in the nitride epitaxial layer surface convenient for subsequent, to protect to the nitride epitaxial layer.
Preferably, the p-type GaN layer 12 with a thickness of 80nm~110nm, the quantum well layer 13 with a thickness of 98nm~
118nm, the preparation layer 18 with a thickness of 95nm~115nm.The p-type GaN layer 12, the quantum well layer 13 and the preparation
The thickness of layer 18 does not change before and after the conductive substrates 10 are bonded with the growth substrates.
For example, the p-type GaN layer 12 with a thickness of 90nm, the quantum well layer 13 with a thickness of 108nm, material
For GaN or AlGaN the preparation layer 18 with a thickness of 105nm.
Moreover, present embodiment additionally provides a kind of preparation side of vertical structure near ultraviolet light emitting diode
Method, attached drawing 2 are the preparation method flow chart of vertical structure near ultraviolet light emitting diode in the specific embodiment of the invention, attached drawing
3A-3G is that main technique is cut during preparing vertical structure near ultraviolet light emitting diode in the specific embodiment of the invention
The specific structure of face schematic diagram, the vertical structure near ultraviolet light emitting diode of present embodiment manufacture can be found in Fig. 1.Such as figure
Shown in 1- Fig. 2, Fig. 3 A- Fig. 3 G, the preparation method for the vertical structure near ultraviolet light emitting diode that present embodiment provides, packet
Include following steps:
Step S21 is bonded a growth substrates 20 and a conductive substrates 10, obtains structure as shown in Figure 3 C；The growth
20 surface of substrate has nitride epitaxial layer and metallic reflector 11, and the nitride epitaxial layer includes along perpendicular to the growth
Buffer layer 22 that the direction of substrate 20 is sequentially stacked, undoped GaN layer 21, N-type AlGaN layer 14, preparation layer 18, quantum well layer
13, p-type GaN layer 12, the metallic reflector 11 are located at 12 surface of p-type GaN layer, as shown in Figure 3A；The conductive substrates
10 include first surface and the second surface opposite with the first surface, and the second surface has P-type electrode 16, such as schemes
Shown in 3B.
The growth substrates 20 can be III-V race's material substrate, Sapphire Substrate or silicon substrate, in this specific implementation
In mode, the growth substrates 20 are preferably the Si substrate of crystal orientation 111.The specific steps for forming the growth substrates 20 include:
It is sequentially depositing buffer layer 22, undoped GaN (u-GaN) layer 21, N-type AlGaN layer 14, preparation layer 18, Quantum Well
Layer 13, p-type GaN layer 12 form initial nitride epitaxial layer in 20 surface of growth substrates；
Metallic reflector 11 is formed in 12 surface of p-type GaN layer.
Wherein, metallic reflector 11 is formed in the specific method on 12 surface of p-type GaN layer, and those skilled in the art can
To be selected according to actual needs, for example, can using electron beam evaporation process, magnetron sputtering technique, chemical vapor deposition,
Physical vapour deposition (PVD), atomic layer deposition etc..
Specifically, the quantum well layer 13 can be InGaN/GaN quantum well layer.The conductive substrates 10 can be
Metal material substrate, or Si substrate, those skilled in the art can select according to actual needs.This specific implementation
In mode, the conductive substrates 10 are preferably the Si substrate of crystal orientation 100.The material of the metallic reflector 11 can be nickel, silver
One of or the alloy that is made of the two.The metallic reflector 11 forms Ohmic contact (electricity with the p-type GaN layer 12
Connection).The material of the preparation layer 18 can be GaN or AlGaN.The material of the P-type electrode 16 can for chromium, platinum or
Gold.The buffer layer 22 is used to adjust the stress between the growth substrates 20 and the nitride epitaxial layer grown thereon.
In the growth substrates 20, the thickness of each layer is as follows in the nitride epitaxial layer of initial growth: described slow
Rush that layer 22 is 1.2 μm~1.4 μm, undoped GaN (u-GaN) layer 21 is 0.6 μm~0.8 μm, the N-type AlGaN layer
14 be 2.5 μm~2.7 μm, the preparation layer 18 is 95nm~115nm, the quantum well layer 13 is 98nm~118nm, the P
Type GaN layer 12 is 80nm~100nm.For example, the buffer layer 22 of AlN/AlGaN material with a thickness of 1.3 μm, it is described
Undoped GaN (u-GaN) layer 21 with a thickness of 0.7 μm, the N-type AlGaN layer 14 with a thickness of 2.63 μm, GaN material
The preparation layer 18 with a thickness of 105nm, InGaN/GaN quantum well layer with a thickness of 108nm, the thickness of the p-type GaN layer 12
For 90nm.
Wherein, the N-type AlGaN layer 14 of initial growth may include stacked on top of each other in Yu Suoshu growth substrates 20
One N-type AlGaN layer and the second N-type AlGaN layer, wherein the second N-type AlGaN layer be located at the first N-type AlGaN layer with
Between the preparation layer 18.The thickness of the first N-type AlGaN layer can be 2.5 μm, the thickness of the second N-type AlGaN layer
It can be 130nm.The content of Al, Ga are all in gradual change type point in the first N-type AlGaN layer and the second N-type AlGaN layer
Cloth, and the doping concentration in the first N-type AlGaN layer is lower than the doping concentration of the second N-type AlGaN layer.
In bonding process, with the metallic reflector 11 towards the conductive substrates 10 the first surface side
Formula is bonded the conductive substrates 10 and the growth substrates 20 along the y axis.
Specifically, a growth substrates 20 are bonded and the specific steps of a conductive substrates 10 include:
The first NiSn bonded layer 171 is formed in 11 surface of metallic reflector；
The 2nd NiSn bonded layer 172 is formed in the first surface of the conductive substrates 10；
It is bonded the first NiSn bonded layer 171 and the 2nd NiSn bonded layer 172.
Wherein, 11 surface of Yu Suoshu metallic reflector forms specific method, the Yu Suoshu of the first NiSn bonded layer 171
The specific method that the first surface of conductive substrates 10 forms the 2nd NiSn bonded layer 172 all can be electron beam evaporation
Technique, magnetron sputtering technique, chemical vapor deposition, physical vapour deposition (PVD) or atomic layer deposition.The first NiSn bonded layer 171
With 11 Ohmic contact of metallic reflector, the 2nd NiSn bonded layer 172 and 10 Ohmic contact of conductive substrates.
Step S22 removes the growth substrates 20, as shown in Figure 3D.
Step S23 etches the nitride epitaxial layer, removes the buffer layer 22 and the undoped GaN layer 21, and
The N-type AlGaN layer 14 is thinned, so that the thickness of the remaining nitride epitaxial layer is less than the wavelength of black light.
Preferably, the specific steps for etching the nitride epitaxial layer include:
The nitride epitaxial layer is etched to the N-type AlGaN layer 14, removes the buffer layer 22 and described undoped
GaN layer 21, and the N-type AlGaN layer 14 is thinned, so that the thickness of the remaining nitride epitaxial layer is less than black light
Wavelength, as shown in FIGURE 3 E；
Device area is defined in the remaining nitride epitaxial layer；
The remaining nitride epitaxial layer around the device area is etched to the metallic reflector 11, forms platform
Stepped structure；The step-like structure includes getting out of a predicament or an embarrassing situation and being made of the remaining nitride epitaxial layer in device area
Top bar；It is described to get out of a predicament or an embarrassing situation including the P-type electrode 16, the conductive substrates 10 and the metallic reflector 11 and described
It gets out of a predicament or an embarrassing situation and protrudes from the top bar along the direction for being parallel to the conductive substrates 10, as illustrated in Figure 3 F.
Specifically, present embodiment uses two step etching technics: in first step etching technics, removing described slow
Layer 22 and the undoped GaN layer 21 are rushed, and the N-type AlGaN layer 14 is thinned, to control outside the remaining nitride
Prolong the thickness of layer；In second step etching technics, the step-like structure is formed, wherein being located at the remaining of the device area
The nitride epitaxial layer constitutes the top bar, the P-type electrode 16 being sequentially stacked along the y axis, the conductive substrates
10 with the metallic reflector 11 constitute it is described get out of a predicament or an embarrassing situation, described get out of a predicament or an embarrassing situation protrudes from the top bar along the x axis, i.e., described
Top bar is convexly equipped in the partial region on the surface of getting out of a predicament or an embarrassing situation, the leave from office not covered by the remaining nitride epitaxial layer
Rank surface exposes the metallic reflector 11.By forming the step-like structure, convenient for subsequent in the nitride epitaxial
Layer surface forms passivation layer, to protect to the nitride epitaxial layer.
In order to further increase the light extraction efficiency of the vertical structure near ultraviolet light emitting diode, it is preferred that remaining institute
The thickness of nitride epitaxial layer is stated in 300nm or less.At this point, being nitrogenized in finally formed vertical structure near ultraviolet light emitting diode
Total thickness of object epitaxial layer is far smaller than the wavelength for the near ultraviolet light that the light emitting diode issues, thus significantly more efficient
Avoid limitation of the restriction mode to light emitting diode light extraction efficiency.
Step S24 forms N-type electrode 15 in remaining 14 surface of N-type AlGaN layer, as shown in Figure 3 G.
The material of the N-type electrode 15 and the P-type electrode 16 can be chromium, platinum or gold.Specifically, it can adopt
The N-type electrode 15 is formed in thinned 14 surface of N-type AlGaN layer with the mode of evaporation metal electrode.
The vertical structure near ultraviolet light emitting diode and preparation method thereof that present embodiment provides, since device uses
Vertical structure improves electrical pumping efficiency；The thickness of nitride epitaxial layer is set smaller than to the wavelength of black light simultaneously, is made
The limitation of the unfettered mode of vertical structure near ultraviolet light emitting diode is obtained, reduces or even be a cancellation light emitting diode
Transmission of the light inside nitride epitaxial layer is penetrated, absorbed inside loss is reduced, so that the light extraction efficiency of light emitting diode is big
Amplitude improves；Meanwhile the setting of metallic reflector further enhances the light extraction efficiency of light emitting diode.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of vertical structure near ultraviolet light emitting diode characterized by comprising
Conductive substrates, the conductive substrates have first surface and the second surface opposite with the first surface；
Metallic reflector is located at the first surface；
Nitride epitaxial layer is located at the metallic reflection layer surface, including successively folding along the direction perpendicular to the conductive substrates
The thickness of p-type GaN layer, quantum well layer, preparation layer and the N-type AlGaN layer set, the nitride epitaxial layer is less than black light
Wavelength；
N-type electrode is located at N-type AlGaN layer surface；
P-type electrode is located at the second surface.
2. vertical structure near ultraviolet light emitting diode according to claim 1, which is characterized in that the nitride epitaxial layer
Thickness in 300nm or less.
3. vertical structure near ultraviolet light emitting diode according to claim 1, which is characterized in that further include being located at described lead
NiSn bonded layer between electric substrate and the metallic reflector.
4. vertical structure near ultraviolet light emitting diode according to claim 1, which is characterized in that the vertical structure is closely purple
UV light-emitting diode is in step-like structure；The step-like structure includes getting out of a predicament or an embarrassing situation and being made of the nitride epitaxial layer
Top bar；It is described to get out of a predicament or an embarrassing situation including the P-type electrode, the conductive substrates and the metallic reflector, and the edge of getting out of a predicament or an embarrassing situation
The direction for being parallel to the conductive substrates protrudes from the top bar.
5. vertical structure near ultraviolet light emitting diode according to claim 1, which is characterized in that the thickness of the p-type GaN layer
Degree is 80nm~100nm, the quantum well layer with a thickness of 98nm~118nm, the preparation layer with a thickness of 95nm~
115nm。
6. a kind of preparation method of vertical structure near ultraviolet light emitting diode, which comprises the steps of: bonding all one's life
Long substrate and a conductive substrates, the growth substrates surface has nitride epitaxial layer and metallic reflector, outside the nitride
Prolong layer include along perpendicular to the growth substrates direction be sequentially stacked buffer layer, undoped GaN layer, N-type AlGaN layer,
Preparation layer, quantum well layer, p-type GaN layer, the metallic reflector are located at p-type GaN layer surface；The conductive substrates include
First surface and the second surface opposite with the first surface, the second surface have P-type electrode；Remove the growth
Substrate；
The nitride epitaxial layer is etched, the buffer layer and the undoped GaN layer are removed, and the N-type AlGaN is thinned
Layer, so that the thickness of the remaining nitride epitaxial layer is less than the wavelength of black light；
N-type electrode is formed in remaining N-type AlGaN layer surface.
7. the preparation method of vertical structure near ultraviolet light emitting diode according to claim 6, which is characterized in that remaining
The thickness of the nitride epitaxial layer is in 300nm or less.
8. the preparation method of vertical structure near ultraviolet light emitting diode according to claim 6, which is characterized in that bonding one
The specific steps of growth substrates and a conductive substrates include:
The first NiSn bonded layer is formed in the metallic reflection layer surface；
The 2nd NiSn bonded layer is formed in the first surface of the conductive substrates；
It is bonded the first NiSn bonded layer and the 2nd NiSn bonded layer.
9. the preparation method of vertical structure near ultraviolet light emitting diode according to claim 6, which is characterized in that etching institute
The specific steps for stating nitride epitaxial layer include:
The nitride epitaxial layer is etched to the N-type AlGaN layer, removes the buffer layer and the undoped GaN layer, and
The N-type AlGaN layer is thinned, so that the thickness of the remaining nitride epitaxial layer is less than the wavelength of black light；
Device area is defined in the remaining nitride epitaxial layer；
The remaining nitride epitaxial layer around the device area is etched to the metallic reflector, forms step-like knot
Structure；The step-like structure includes getting out of a predicament or an embarrassing situation and being appeared on the stage by what the remaining nitride epitaxial layer in device area was constituted
Rank；It is described to get out of a predicament or an embarrassing situation including the P-type electrode, the conductive substrates and the metallic reflector, and described get out of a predicament or an embarrassing situation along parallel
The top bar is protruded from the direction of the conductive substrates.
10. the preparation method of vertical structure near ultraviolet light emitting diode according to claim 6, which is characterized in that the P
Type GaN layer with a thickness of 80nm~100nm, the quantum well layer with a thickness of 98nm~118nm, the preparation layer with a thickness of
95nm~115nm.
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