CN109841689A - A kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping - Google Patents
A kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping Download PDFInfo
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- CN109841689A CN109841689A CN201910071910.1A CN201910071910A CN109841689A CN 109841689 A CN109841689 A CN 109841689A CN 201910071910 A CN201910071910 A CN 201910071910A CN 109841689 A CN109841689 A CN 109841689A
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- black phosphorus
- grade doping
- peak dopant
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Abstract
The invention discloses a kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping, including the source electrode parallel with black phosphorus atomic layer, drain electrode and channel, the channel is from source electrode to drain electrode successively including the first N-type heavily doped region, first gradient doped structure, peak dopant structure, intrinsic black phosphorus, the second grade doping structure and the second N-type heavily doped region.The present invention carries out peak symmetry grade doping to the channel of black phosphorus field-effect tube, with bigger threshold voltage, lower off-state current, better switching characteristic, better high frequency characteristics, show that the device can preferably inhibit drain induced barrier to reduce effect, lower subthreshold region grid swing, illustrate that the device possesses more preferably grid-control ability, short-channel effect, the introducing of grade doping structure can preferably be inhibited, so that device inhibits the ability of hot carrier's effect also to enhance.Under lower operating voltage, biggish driving current can be obtained, and is expected to be applied in digital circuit.
Description
Technical field
The present invention relates to a kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping, belong to black phosphorus nanometer field
Effect pipe field.
Background technique
With the development of nanotechnology, nano electron device causes extensive concern, the electricity of two-dimensional nano electronic device
Sub- transport property has also obtained extensive research.Information age today, integrated circuit (Integrate Circuit) play act foot
The effect of weight, it is core and the basis of electronic information technology development.The fast development of integrated circuit and modern communications calculate
The development of machine, internet and multimedia technology mutually drives, and greatly affects the every aspect of the modern life.Therefore IC industry
Development level have become the important symbol for measuring a national overall national strength.Since graphene is found, there is atom
The two-dimensional layer material of thickness degree becomes forward position research hotspot because of its unique dimensional properties.International Semiconductor Technology Blueprint
(ITRS) point out 2028 by be silicon materials doomsday, and two-dimensional material is expected to the alternative materials as most potential silicon.Two
The research for tieing up material is gradually expanded to transient metal sulfide, four race's SiGe tin, three races's boron and five race's phosphorus arsenic antimony from graphene.Two
Dimension material family goes from strength to strength, such as the two-dimentional black phosphorus grown rapidly in recent years is because of its suitable controllable direct band gap, high load
Flow transport factor, high current-modulation rate, relatively suitable switching current ratio, good thermal conductivity and conductivity, preferable each
Anisotropy and wideband fast-response ability and be concerned.Chen Xianhui in May, 2015 professor study group and Zhang Yuanbo professor's project exist
On the basis of preparing two-dimentional black phosphorus field effect transistor for the first time, by improving black phosphorus crystal quality and being nitrogenized with six side of thin layer
Boron (h-BN) makees substrate, thin layer black phosphorus the field effect transistor holoe carrier of electric field induction and electronic carrier at low temperature
Hall coefficient has respectively reached 2000cm2/ (vs) and 900cm2/ (vs), and the field-effect mobility in hole is at low temperature
Then it is up to 3900cm2/(v·s)；After mobility is obviously improved, the quantum oscillatory occurences of resistance is for the first time in black phosphorus under high-intensity magnetic field
It is middle successfully to be observed；Theoretical calculation then shows that the conductive channel in black phosphorus field-effect tube is confined to apart from black phosphorus and substrate
In narrow Quantum Well within the 2nm of interface, and the spatial distribution of most carriers is concentrated on apart from two, interface atom
Within layer.Test show the interface of thin layer black phosphorus and h-BN substrate near in the presence of by extra electric field induced consistent with notional result
The two-dimentional high-mobility electron gas of generation, best mobility have reached the adaptable level in person in electronics.This
It indicates that thin layer black phosphorus has become another and can be used in preparing high-mobility electron element, and possesses wide application prospect
Two-dimensional material.2016 Nian9Yue Fudan University Zhang Yuanbo teach seminar and Univ California-Berkeley professor Wang Feng class
What seminars' cooperations such as topic group, China Science & Technology University Chen Xianhui professor seminar were completed drills about few layer of black phosphorus band structure
The article of change is published in " Nature Nanotechnology ".Researcher with optical instrument have studied phosphorus alkene band structure with
The variation of the number of plies has determined the band gap of single layer, bilayer and three layers of black phosphorus by the optical absorption spectra of measurement phosphorus alkene first for the first time, has sent out
Now match with the band gap of silicon and telecommunication photon energy；Next finds the ABSORPTION EDGE energy in its glow peak energy and absorption spectra
Amount height is overlapped, and experimentally demonstrates the direct band gap characteristic of black phosphorus for the first time, and its direct band gap feature does not occur with the number of plies
Variation；Finally in the black phosphorus of two layers and multilayer, the position in absorption spectrum higher than band-gap energy has found new formant, from
And the process that black phosphorus band structure changes with the number of plies is disclosed, and thus obtained the strength information of black phosphorus Interaction between layers.
This experimental result discloses the blank that phosphorus alkene has filled up other two-dimensional materials with the adjustable band-gap energy of the number of plies, covers important
Spectral band, and the direct band gap characteristic of phosphorus alkene greatly improves its efficiency of light absorption, in conjunction with the high carrier of itself
Mobility, so that black phosphorus has important potential using value in terms of communication and the energy.
Summary of the invention
Goal of the invention: the present invention proposes a kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping, effectively
Drain induced barrier is inhibited to reduce effect.
Technical solution: the technical solution adopted by the present invention is a kind of black phosphorus field of asymmetric peak dopant combination grade doping
Effect pipe, including the source electrode parallel with black phosphorus atomic layer, drain electrode and channel, the channel from source electrode to drain electrode successively include the
One N-type heavily doped region, first gradient doped structure, peak dopant structure, intrinsic black phosphorus, the second grade doping structure and the 2nd N
Type heavily doped region.
The first N-type heavily doped region and first gradient doped structure form source expansion area, the second grade doping structure and
Second N-type heavily doped region composition leakage expansion area, source expansion area and leakage expansion area equal length, are 30nm.
It sets on the black phosphorus surface vertical with the orientation there are two gate oxide, two gate oxides are located at same
On straight line and mutually in the orthographic projection of other side.
The gate oxide is hafnium oxide material, and thickness is 2nm, and dielectric constant is 25.
One layer of grid is made in each gate oxide outer surface, so that double-grid structure is formed, the length of each grid
It is 15.3nm.
Each grid is all made of the tin that work function is 4.4 as grid material.
The length of the peak dopant structure is 5nm, doping concentration 1.3nm-1；First gradient doped structure and second
The length of grade doping structure is 15nm, and the doping concentration of the first N-type heavily doped region and the second N-type heavily doped region is 1.0nm-1。
The utility model has the advantages that the present invention carries out peak symmetry grade doping to the channel of black phosphorus field-effect tube, there is bigger threshold
Threshold voltage, lower off-state current, better switching characteristic, better high frequency characteristics show that the device can preferably inhibit to leak
Potential barrier is caused to reduce effect, lower subthreshold region grid swing illustrates that the device possesses more preferably grid-control ability, can preferably inhibit
Short-channel effect, the introducing of grade doping structure, so that device inhibits the ability of hot carrier's effect also to enhance.In lower work
Make under voltage, biggish driving current can be obtained, and is expected to be applied in digital circuit.
Detailed description of the invention
Fig. 1 is the sectional view of black phosphorus field-effect tube of the present invention；
Fig. 2 is the iterative algorithm flow chart based on unbalance distribution；
Fig. 3 is the doping concentration schematic diagram of black phosphorus field-effect tube channel of the present invention；
Fig. 4 is black phosphorus crystal structure chart.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
As shown in figure 4, black phosphorus has layer structure same as graphene, there is good semiconducting behavior.In Fig. 1,
The black phosphorus nano field-effect pipe of the peak dopant combination symmetric gradient doped structure of the present embodiment includes being located at black phosphorus nanotube two
The source electrode V at endSWith drain electrode VD, in source electrode VSWith drain electrode VDBetween black phosphorus nanotube carried out non-uniform doping processing.For convenient for
Statement, defining the direction parallel with black phosphorus layered planes is z-axis, and is x-axis perpendicular to the direction of black phosphorus layered planes.In z-axis
On direction, from source electrode VSTo drain electrode VDChannel successively include that the first N-type heavily doped region 3, first gradient doped structure 5, peak value are mixed
Miscellaneous structure 4, intrinsic black phosphorus 6, the second grade doping structure 7, the second N-type heavily doped region 8.In the direction of the x axis, black phosphorus nanotube table
Face deposits two gate oxides 2, and two gate oxides 2 are located on the same line and mutually in the orthographic projection of other side.
One layer of metal gates are deposited in each 2 outer surface of gate oxide, to form double-grid structure.Neighbouring source electrode VSThe of one end
One N-type heavily doped region 3 and first gradient doped structure 5 form source expansion area, and the length is Ls.Adjacent drains VDThe second of one end
Grade doping structure 7 and the second N-type heavily doped region 8 composition leakage expansion area, the length is LD, and Ls=LD。
In the present embodiment, gate oxide 2 is hafnium oxide material, and thickness is 2nm, dielectric constant 25.Source is expanded
Exhibition section length LsSection length L is extended with leakageDIt is 30nm.The length of grid is 15.3nm.The length of peak dopant structure 4 is
5nm, doping concentration 1.3nm-1.The length of first gradient doped structure 5 and the second grade doping structure 7 is 15nm, the
The doping concentration of one N-type heavily doped region 3 and the second N-type heavily doped region 8 is 1.0nm-1。
Two grids are symmetrical, one of them is known as top-gated 1, and another is known as bottom gate 9.Two grids are all made of function
The tin that function is 4.4 is made as grid material, gate oxide 2 of atomic deposition method.
The source drain extension regions of device have been all made of N-type heavy doping technique close to the side of source electrode and drain electrode, close in channel
The side of source expansion area uses peak dopant technique, and is all made of ladder close to channel side in device source expansion area and leakage expansion area
Doping process is spent, peak value-symmetric gradient doped structure is ultimately formed.
The calculating of the present embodiment black phosphorus field-effect tube device model is being opened using unbalance distribution (NEGF) method
It puts under boundary condition, self-consistent solution two dimension Poisson and Schrodinger equation.Detailed process are as follows: given original trench potential is brought into non-
Balance Green's function (NEGF) equation calculation goes out its charge density, then the charge density acquired substitution Poisson's equation is solved
Then this potential is substituted into unbalance distribution (NEGF) equation again again and is calculated, such as by the electrostatic potential in CNT channel
This iterates until obtaining self-consistent solution, specific as follows:
As shown in Fig. 2, the present embodiment black phosphorus field-effect tube calculated includes two self energy matrix ΣSAnd ΣD, use respectively
In the coupled relation of description channel and source/drain, have selected suitable base group and Hamiltonian for describing channel and
After self energy item, it is in harmony potential certainly for given, the sluggish Green's function G (E) of system has following form
G (E)=[(E+i η+)I-H-ΣD-ΣS]-1 (1)
E is energy, η in formula+It is a positive dimensionless, I is unit matrix, ΣSAnd ΣDRespectively device source electrode and leakage
The self energy item of pole contribution, can be found out according to surface Green's function by iteration.Assuming that the potential of source-drain area and the balance Fermi of CNT
Energy level maintains an equal level, and does not limit state completely, after acquiring surface Green's function, then in device any position electronics and sky
Cave density can be acquired by following formula
Wherein EIFor the fermi level of nanotube segment, f is Fermi Dirac distribution function, EFSIt is Fermi's energy of source region
Grade, EFDIt is the fermi level in drain region.
The electrons and holes density found out is substituted into two-dimentional Poisson's equation to solve electrostatic potential, wherein two-dimentional Poisson's equation can
It is expressed from the next
U is electrostatic potential in above formula, and ε is dielectric constant, and ρ is doping concentration.Finally, for calculating device channel current, it can
To utilize the Landauer-Buttiker formula in nanoelectronic transport theory,
Wherein q is electron charge, and h is planck constant, and T (E) is transmission coefficient of the electronics by channel:
T [E]=Trace [Γ G Γ G+] (5)
Under said frame, the current characteristics and switching characteristic of the black phosphorus field-effect tube using different doping strategies are carried out
Analysis.
Asymmetric peak dopant prevents source depletion region from extending to channel region by improving the local doping concentrations near source electrode
And the charge formed shares effect, prevents Punchthrough, reduces leakage current, improves grid-control ability, reduces threshold drift.It is leaning on
The lower grade doping structure of concentration, which is added, between the heavily doped region and intrinsic black phosphorus channel of nearly source-drain electrode makes field-effect pipe trench
The junction potential change of road and source-drain area becomes flat, and electric field strength is lower.The non-linear doping and existing skill of the present embodiment
Linear doping in art is compared, and control is difficult during doping and realizes its doping concentration idealization, and the use of concentration is in line
Property variation doping process for mitigate potential change and reduce electric field strength effect it is very limited.
Claims (7)
1. a kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping, including the source electrode parallel with black phosphorus atomic layer
(VS), drain electrode (VD) and channel, which is characterized in that the channel is from source electrode (VS) extremely drain electrode (VD) it successively include the first N-type weight
Doped region (3), first gradient doped structure (5), peak dopant structure (4), intrinsic black phosphorus (6), the second grade doping structure (7)
With the second N-type heavily doped region (8).
2. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 1, which is characterized in that
The first N-type heavily doped region (3) and first gradient doped structure (5) form source expansion area, the second grade doping structure (7) and
Second N-type heavily doped region (8) composition leakage expansion area, source expansion area and leakage expansion area equal length, are 30nm.
3. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 1, which is characterized in that
It sets on the black phosphorus surface vertical with the orientation there are two gate oxide (2), two gate oxides (2) are located at same
On straight line and mutually in the orthographic projection of other side.
4. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 3, which is characterized in that
The gate oxide (2) is hafnium oxide material, and thickness is 2nm, and dielectric constant is 25.
5. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 3, which is characterized in that
One layer of grid is made in each gate oxide (2) outer surface, to form double-grid structure, the length of each grid is
15.3nm。
6. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 5, which is characterized in that
Each grid is all made of the tin that work function is 4.4 as grid material.
7. the black phosphorus field-effect tube of asymmetric peak dopant combination grade doping according to claim 1, which is characterized in that
The length of the peak dopant structure (4) is 5nm, doping concentration 1.3nm-1；First gradient doped structure (5) and the second ladder
The length for spending doped structure (7) is 15nm, the doping concentration of the first N-type heavily doped region (3) and the second N-type heavily doped region (8)
For 1.0nm-1。
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| CN103094349A (en) * | 2013-01-31 | 2013-05-08 | 南京邮电大学 | Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings |
| US20180204953A1 (en) * | 2017-01-17 | 2018-07-19 | The Board Of Trustees Of The University Of Illinois | Vertical Hetero- and Homo-Junction Tunnel Field-Effect Transistors |
| CN108493250A (en) * | 2018-03-27 | 2018-09-04 | 南京邮电大学 | A kind of black phosphorus field-effect tube of Asymmetric Linear peak dopant |
| CN108630746A (en) * | 2018-04-25 | 2018-10-09 | 南京邮电大学 | A kind of graphene tunnelling type effect pipe of grade doping dissimilar materials grid structure |
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2019
- 2019-01-25 CN CN201910071910.1A patent/CN109841689A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094349A (en) * | 2013-01-31 | 2013-05-08 | 南京邮电大学 | Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings |
| US20180204953A1 (en) * | 2017-01-17 | 2018-07-19 | The Board Of Trustees Of The University Of Illinois | Vertical Hetero- and Homo-Junction Tunnel Field-Effect Transistors |
| CN108493250A (en) * | 2018-03-27 | 2018-09-04 | 南京邮电大学 | A kind of black phosphorus field-effect tube of Asymmetric Linear peak dopant |
| CN108630746A (en) * | 2018-04-25 | 2018-10-09 | 南京邮电大学 | A kind of graphene tunnelling type effect pipe of grade doping dissimilar materials grid structure |
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Application publication date: 20190604 |