CN103094349A - Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings - Google Patents
Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings Download PDFInfo
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- CN103094349A CN103094349A CN2013100382213A CN201310038221A CN103094349A CN 103094349 A CN103094349 A CN 103094349A CN 2013100382213 A CN2013100382213 A CN 2013100382213A CN 201310038221 A CN201310038221 A CN 201310038221A CN 103094349 A CN103094349 A CN 103094349A
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Abstract
The invention discloses a three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings. The field-effect tube is of a cylindrical shape on the whole and comprises a carbon nano tube (1), an insulating layer (2) which is surrounded outside the carbon nano tube (1) and ring gratings (3) which are placed outside the insulating layer (2), wherein the carbon nano tube (1), the insulating layer (2) and the ring gratings (3) are sequentially arranged from the center to the outside. The insulating layer (2) is of a ring shape, and the length of the insulating layer (2) is the same as that of the carbon nano tube (1). A source electrode (4) and a drain electrode (5) are respectively arranged at both ends of the carbon nano tube (1). Parts of the carbon nano tube which are connected with the source electrode (4) and the drain electrode (5) are respectively provided with a source region (41) and a drain region (51), the length of the source region (41) is the same as that of the drain region (51), and N type heavy doping is adopted both in the source region (41) and the drain region (51). Thus, an owe grating structure is added. When a three-material work function gradually decreases from the source electrode to the drain electrode, or a middle work function is maximum, and the position close to the side of the drain electrode is minimum, the structure can effectively enhance performance, high frequency response is improved, and meanwhile, switching current ratio is improved.
Description
Technical field
The present invention relates to the heterogeneous grid structure of carbon nanotube field-effect pipe field, especially carbon nanotube field-effect pipe and owe the grid configuration aspects.
Background technology
Carbon nano-tube can be thought curling Graphene, has the structure of hollow circuit cylinder.Due to this special construction, it has special character on optics, electricity and mechanical performance, also makes the application of carbon nano-tube in nano-electron and photoelectron material that bright prospects are arranged.Carbon nano-tube has different being with under different geometries, for example metal can be with or semiconductor energy gap.The metal mold carbon nano-tube can be used as middle junction, has high heat conductance and low-loss advantage.Semiconductor type carbon nano-tube can implant devices in, field effect transistor (FET) for example.Than silicon materials, because carbon nano-tube has special high mobility and short round road transmission, so can obtain higher drive current, the remarkable reduction of service speed and energy consumption faster.These make carbon nano-tube be highly suitable for high-performance complementary metal oxide semiconductors (CMOS) (CMOS) circuit application.At [Jing Guo such as Jing Guo, Sayed Hasan, Ali Javey, Gijs Bosman. Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors[J]. IEEE Transactions on Nanotechnology 2005,4 (6): 1536-125X.] in research, the cut-off frequency of carbon nanotube field-effect pipe has reached Terahertz (THz).
Carbon nanotube field-effect pipe (CNTFET) is mainly studied two kinds of structures.A kind of is CNTFET with Schottky (Schottky) potential barrier.By can change the height of Schotty potential barrier at the grid making alive, thereby control channel current.This CNTFET can show two polarity effects, reduces performance of devices.Another kind of structure is the CNTFET that is similar to metal oxide semiconductor field effect tube (MOSFET) structure: leak two ends in the source of carbon nano-tube and add heavy doping, the source drain terminal is connected with electrode, can form ohmic contact between metal electrode and carbon nano-tube, crooked can produce potential barrier by band in raceway groove, and the raceway groove tunnelling current can be regulated by the electrostatic potential energy of controlling raceway groove.Because unipolar characteristic and lower leakage current, the CNTFET of this structure has caused scholar's extensive concern.
Recently, a kind of grid structure of owing is applied in CNTFET.Owe effectively to have reduced the direct tunnelling leakage current at grid edges and the parasitic capacitance between grid leak adding of grid, make the grid delay of device reduce.Also reduce simultaneously the electric field of drain terminal, reduced the interband tunnelling of drain electrode, thereby reduced leakage current, improved the high frequency characteristics of device.
On the other hand, along with reducing of device size, the length of raceway groove is shorter and shorter, and short-channel effect (SCE) need to have become the major issue of consideration.In order to improve device to the resistivity of SCE, a kind of heterogeneous grid structure is suggested.In heterogeneous gate field-effect transistor, two kinds or the three kinds mixed uses of material with different work functions.Compare with the simple substance grid, heterogeneous grid structure can suppress SCE, improves mutual conductance, improves switch current ratio.
The structure of owing grid and heterogeneous grid has greatly improved to the performance of device different aspect, therefore, the present invention proposes a kind of three kinds of heterogeneous grid carbon nanotube field-effect of material tubular constructions with owing grid, to expect that this structure can suppress significantly short-channel effect and reduce the grid parasitic capacitance, obtains the advantage of owing grid and heterogeneous grid simultaneously.Show by the quantum simulation result based on auto-correlation two dimension Green's function and Poisson's equation, the present invention has not only improved high frequency characteristics, also has simultaneously good switching characteristic.And by with the comparison of silica-base material, proved reliability of structure proposed by the invention.
Summary of the invention
Technical problem:The present invention proposes on the basis with the carbon nanotube field-effect tubular construction of owing grid, add the heterogeneous grid structure that is consisted of grid by three kinds of work function different materials.For disclosing the Quantum Transport Properties of this kind structure devices under nanoscale, what the present invention is based on electromotive force in CNTFET and charge density is in harmony calculating certainly, utilize non-equilibrium Green's function to come calculated charge density, the carrier density of obtaining is updated to self-consistent solution in Poisson (Poisson) equation of device three-dimensional, electrology characteristic to the proposition structure has carried out numerical simulation, and has provided Performance Ratio.The present invention is to improving the CNTFET performance, and under small size, the solution of short-channel effect provides reference.
Technical scheme:Short-channel effect when the objective of the invention is can't overcome device dimensions shrink when keeping obtaining high frequency characteristics and switching characteristic preferably for traditional class MOSFET structure C NTFET has proposed the new device structure of a kind of CNTFET.The heterogeneous grid structure of owing grid and three kinds of materials is introduced in the inspiration that invention is subject to owing grid and heterogeneous grid simultaneously in a structure.Owing to owing direct tunnelling leakage current that the grid structure can reduce the grid edges and the parasitic capacitance between grid leak, reduce simultaneously the electric field of drain terminal, reduce leakage current, owe the high frequency characteristics that the grid structure can improve device effectively.But along with reducing of device size, channel length is shorter and shorter, and it is serious that the impact of short-channel effect becomes.
This field effect transistor integral body is cylindrical, outwards be followed successively by carbon nano-tube from the center of circle, surround the carbon nano-tube outside insulating barrier, be positioned at the ring grid outside insulating barrier, insulating barrier is ring-type, length is identical with carbon nano-tube;
Be respectively equipped with source electrode, drain electrode at two of carbon nano-tube, the carbon nano-tube that is connected with source electrode, drain electrode partly is respectively equipped with length identical source region, drain region, and the N-type heavy doping of identical parameters is all adopted in source region, drain region; The carbon nano-tube mid portion is channel region, and channel region undopes;
From channel direction, the ring grid are positioned at the centre in carbon nano-tube channel district, and length is less than channel region length.So just added and owed the grid structure.
The ring grid are three kinds of heterogeneous grid that the different conductive metallic material of work function consists of, three kinds of materials distribute successively along channel direction, their work function distributes as follows: the work function that is positioned at intermediate materials is maximum, the work function of both sides material is less than the work function of intermediate materials, perhaps the distribution of work function progressively reduces to the side near the drain region from the side near the source region, guarantees near the work function of drain region one side minimum.
Beneficial effect:Meaning of the present invention has been to adopt a kind of structure of mixing, introduces simultaneously in CNTFET and owes grid and the heterogeneous grid structure that is made of three kinds of different materials of work function.Based on the method for non-equilibrium Green's function, comparative analysis the electrology characteristic of traditional C NTFET structure and this kind structure, as
I-
VCurrent characteristics, Sub-Threshold Characteristic and size such as dwindle at the electrology characteristic.Result shows, adopts with the heterogeneous grid structure of three kinds of materials of owing grid, has obtained simultaneously to owe the advantage of grid and heterogeneous grid structure, and good switching characteristic is also arranged when having excellent high frequency characteristics.Adopt the device of this structure can effectively suppress short-channel effect, and can reduce the drain terminal electric field, the ability that makes device suppress hot carrier's effect also strengthens.Under lower operating voltage, can obtain larger drive current, and be expected to obtain to use in digital circuit.
Description of drawings
Fig. 1 device architecture model of the present invention schematic diagram.
Wherein have: grid voltage V
G, source voltage V
S, drain voltage V
D, the first material M
1, the second material M
2, the third material M
3, the first length of material L
1, the second length of material L
2, the third length of material L
3Grid total length L g owes gate length L
UG, the oxide layer length T
OX, carbon nano-tube diameter d, the length L sd in source, drain region, doping type nCNT, carbon nano-tube 1, insulating barrier 2, ring grid 3, source electrode 4, source region 41, drain electrode 5, drain region 51, channel region 6.
Embodiment
CNTFET structure proposed by the invention as shown in Figure 1, it is a kind of gate-all-around structure, the outermost layer grid is made of jointly three kinds of different materials of work function., surrounded by the gate insulation layer of ring-type as conducting channel with the carbon nano-tube of even thickness, device becomes symmetrical structure.The source-drain area of device carries out N-type heavy doping by gas phase or liquid phase chemical Implantation mode, and carbon nano-tube channel undopes.Grid length forms and owes the grid structure less than channel region length.The emulation of device first utilizes non-equilibrium Green's function to calculate charge density, then passes through the Solving Three-Dimensional poisson Equation self-consistent solution of device, draws channel current in conjunction with Neumann (Neumann) boundary condition, and then calculates other electricity parameters.
For improving class MOSFET structure carbon nano tube performance of devices, with improve along with size the factor such as is constantly dwindled and some second-order effects such as the short-channel effect that produce, leaked the level potential barrier and reduce the problems such as (DIBL) effect and hot carrier's effect (HCE), from the angle of device architecture, a kind of three kinds of heterogeneous grid structure carbon nano tube of material field effect transistor with owing grid have been proposed.Calculate charge density based on non-equilibrium Green's function afterwards, the Solving Three-Dimensional poisson Equation self-consistent solution by device draws channel current, and this structure is carried out numerical simulation, and and other structure comparatively validate reliabilities.
Further describe the present invention below in conjunction with accompanying drawing.
Fig. 1 is the sectional view of device architecture model of the present invention.
This field effect transistor integral body is cylindrical, outwards be followed successively by carbon nano-tube 1 from the center of circle, surround carbon nano-tube 1 outside insulating barrier 2, be positioned at the ring grid 3 outside insulating barrier 2, insulating barrier 2 is ring-type, length is identical with carbon nano-tube 1;
Be respectively equipped with source electrode 4, drain electrode 5 at two of carbon nano-tube 1, the carbon nano-tube that are connected with source electrode 4, drain electrode 5 partly are respectively equipped with length identical source region 41, drain region 51, and the N-type heavy doping of identical parameters is all adopted in source region 41, drain region 51; Carbon nano-tube 1 mid portion is channel region 6, and channel region 6 undopes; From channel direction, ring grid 3 are positioned at the centre in carbon nano-tube channel district 6, and length is less than channel region length.So just added and owed the grid structure.Ring grid 3 are the heterogeneous grid that three kinds of materials consist of, three kinds of materials distribute successively along channel direction, their work function distributes as follows: the work function that is positioned at intermediate materials is maximum, the work function of both sides material is less than the work function of intermediate materials, perhaps the distribution of work function progressively reduces to the side near drain region 51 from the side near source region 41, guarantees near the work function of drain region 51 1 sides minimum.Perhaps the distribution of work function progressively reduces to the side near drain terminal from the side near source, guarantees the work function minimum near drain terminal one side, can reduce the drain terminal electric field like this, weakens the DIBL effect and reduces leakage current.
Be separated with the oxide layer of ring-type between carbon nano-tube and ring grid.The length of oxide layer is identical with carbon nano-tube, and thickness is T
ox
Innermost layer is carbon nano-tube, and diameter is d, and two of carbon nano-tube is respectively equipped with source, drain electrode.It is L that the carbon nano-tube that is connected with source, drain electrode partly is respectively equipped with length
sdSource, drain region, all adopt the N-type heavy doping of identical parameters.Doped region and gate edge have L
UGThe space, form and to owe the grid structure, the length of owing grid is L
UGThe carbon nano-tube mid portion is channel region, and channel region undopes.
The calculating of model is in harmony calculating certainly based on the electromotive force in CNTFET and charge density.Charge density utilizes non-equilibrium green function method to calculate.The expression formula of sluggish Green's function is:
Wherein
Represent a positive dimensionless,
ERepresent energy,
H DCarbon nano-tube zone electronics the most adjoining like under Hamiltonian,
Be respectively the self energy item of device source electrode and drain electrode, can obtain with the method for iteration by surperficial Green's function.After obtaining Green's function, in device, the electronics of arbitrary position and hole density can be respectively tried to achieve with formula once:
Wherein
E IBe the Fermi level of CNT part,
E FD (S)For leaking the Fermi level in (source).
With self-consistent solution in the Solving Three-Dimensional poisson Equation of the carrier density substitution device obtained, the Solving Three-Dimensional poisson Equation of device is expressed as with polar form:
Wherein
UBe electrostatic potential,
Be dielectric constant,
For net charge distributes.
The electromotive force of grid and carbon CNT (carbon nano-tube) contact position
VDetermined by Di Li Cray (Dirichlet) boundary condition: e
V=e
V g+
Φ CNT–
Φ g, wherein
V gBe grid voltage,
Φ CNTWith
Φ gBe respectively the work function of carbon CNT (carbon nano-tube) and gate electrode.Missing contact area does not have the boundary of electrode contact to adopt the Neumann boundary condition in the source with other, and the normal component of setting borderline potential gradient is zero, is electroneutral condition to satisfy the device inside built-in field.
Expression formula based on this model channel current is:
Wherein
, be the tunnelling coefficient of electronics by raceway groove,
E FD (S)For leaking the Fermi level in (source).
In the present invention, a kind of quasi-static method of employing is used to estimate the high frequency characteristics of CNTFET, the mutual conductance g of device
mWith gate capacitance C
gCalculate with following formula respectively:
Wherein
I dBe electric current,
V gBe gate voltage,
Q chBe the sum total of the electric charge in carbon nano-tube channel.
The cut-off frequency computing formula of CNTFET can be expressed as:
1 current characteristics with three kinds of heterogeneous grid structures of material of owing grid
By finding out with the heterogeneous grid structure of three kinds of materials of owing grid in the process that drain terminal voltage promotes in the contrast under the same external condition with simple substance grid structure, reducing of threshold voltage is more much smaller than simple substance grid, illustrate that the present invention has suppressed the DIBL effect preferably, have better grid-control ability.Owing to having adopted heterogeneous grid structure, and minimum near the material work function of drain terminal, make originally non-existent energy of position ladder to have occurred distribute in the raceway groove of simple substance grid structure.Can find out the increase of pressing along with leaking from can be with distribution, leak the increase of pressing and all concentrate on close drain region one side, and source region one side energy of position be influenced little, the grid of drain region one side have played the effect that is equivalent to a shield grid.So change with leaking to press, total the barrier height of raceway groove changes not quite, therefore structure of the present invention can weaken the DIBL effect.
2 high frequency characteristicses with three kinds of heterogeneous grid structures of material of owing grid
By relatively can finding out, can well remain on the THz rank with the cut-off frequency of three kinds of heterogeneous grid structures of material of owing grid, approach with the Graphene performance, and with the increase of owing gate length, have obvious increase by frequency.This is to have reduced the electric field line of direct connection source/drain terminal because owe the increase of gate length, and has reduced gate capacitance, thereby makes cut-off frequency promote.In the structure of only owing grid, owe the increase of gate length can increase the tunnelling of source between leaking, make ON state current and off-state current reduce simultaneously, larger to the obstruction of ON state current owing to owing grid, make the decline of ON state current larger, so decline has appearred in cut-off frequency.In structure of the present invention, the heterogeneous grid structure of three kinds of materials has well made up this defective.Increase in the situation that owe gate length, still obtained switch current ratio preferably.
3 dwindle characteristic with the size of three kinds of heterogeneous grid structures of material of owing grid
By the calculating to different size CNTFET device performance, by comparing attitude electric current, off-state current and the current on/off ratio result of calculation of simple substance grid and structure of the present invention, can see with grid are long and increasing, the off-state current of device reduces, the off-state current of device architecture of the present invention is much smaller than single gate device, and the off-state leakage current of single gate device is all greater than the performance index of ITRS ' 10.Than off-state current, being more or less the same of ON state current, and grid long change little to the ON state current affects.From switching current recently, current on/off ratio of the present invention is much larger than the simple substance gate device, and this explanation is compared with the simple substance gate device, and the present invention can keep lower leakage current when obtaining larger drive current.In general, the present invention is very outstanding in the performance of switch current ratio, can reach high nearly 2 orders of magnitude of performance index than ITRS ' 10.Owing to having suppressed preferably short-channel effect, when further dwindling, device size also still can keep good performance.
Claims (2)
1. one kind with the three kinds of heterogeneous grid carbon nanotube field-effect of material pipes owing grid, it is characterized in that:
This field effect transistor integral body is cylindrical, outwards be followed successively by carbon nano-tube (1) from the center of circle, surround the outside insulating barrier (2) of carbon nano-tube (1), be positioned at the ring grid (3) outside insulating barrier (2), insulating barrier (2) is ring-type, and length is identical with carbon nano-tube (1);
Be respectively equipped with source electrode (4), drain electrode (5) at two of carbon nano-tube (1), the carbon nano-tube that is connected with source electrode (4), drain electrode (5) partly is respectively equipped with the identical source region of length (41), drain region (51), and the N-type heavy doping of identical parameters is all adopted in source region (41), drain region (51); Carbon nano-tube (1) mid portion is channel region (6), and channel region (6) undopes;
From channel direction, ring grid (3) are positioned at the centre in carbon nano-tube channel district (6), and length has so just added and owed the grid structure less than channel region length.
2. the three kinds of heterogeneous grid carbon nanotube field-effect of material pipes with owing grid according to claim 1, it is characterized in that: ring grid (3) are three kinds of heterogeneous grid that the different conductive metallic material of work function consists of, three kinds of materials distribute successively along channel direction, their work function distributes as follows: the work function that is positioned at intermediate materials is maximum, the work function of both sides material is less than the work function of intermediate materials, perhaps the distribution of work function progressively reduces to the side near drain region (51) from the side near source region (41), guarantee near the work function of drain region (51) one sides minimum.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882484A (en) * | 2015-05-19 | 2015-09-02 | 武汉大学 | Tunneling field effect device for channel potential barrier height control |
| CN109841689A (en) * | 2019-01-25 | 2019-06-04 | 南京邮电大学 | A kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping |
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|---|---|---|---|---|
| CN1527398A (en) * | 2003-03-06 | 2004-09-08 | 北京大学 | Combined-grid FET |
| US7009265B2 (en) * | 2004-06-11 | 2006-03-07 | International Business Machines Corporation | Low capacitance FET for operation at subthreshold voltages |
| CN1976030A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | Integrate circuit and manufacturing method thereof |
| US20080315302A1 (en) * | 2007-06-20 | 2008-12-25 | Reginald Conway Farrow | Method of Forming Nanotube Vertical Field Effect Transistor |
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2013
- 2013-01-31 CN CN2013100382213A patent/CN103094349A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527398A (en) * | 2003-03-06 | 2004-09-08 | 北京大学 | Combined-grid FET |
| US7009265B2 (en) * | 2004-06-11 | 2006-03-07 | International Business Machines Corporation | Low capacitance FET for operation at subthreshold voltages |
| CN1976030A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | Integrate circuit and manufacturing method thereof |
| US20080315302A1 (en) * | 2007-06-20 | 2008-12-25 | Reginald Conway Farrow | Method of Forming Nanotube Vertical Field Effect Transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882484A (en) * | 2015-05-19 | 2015-09-02 | 武汉大学 | Tunneling field effect device for channel potential barrier height control |
| CN109841689A (en) * | 2019-01-25 | 2019-06-04 | 南京邮电大学 | A kind of black phosphorus field-effect tube of asymmetric peak dopant combination grade doping |
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Application publication date: 20130508 |