CN109841647A - A kind of OLED display module and display - Google Patents

A kind of OLED display module and display Download PDF

Info

Publication number
CN109841647A
CN109841647A CN201711192644.5A CN201711192644A CN109841647A CN 109841647 A CN109841647 A CN 109841647A CN 201711192644 A CN201711192644 A CN 201711192644A CN 109841647 A CN109841647 A CN 109841647A
Authority
CN
China
Prior art keywords
display module
sub
layer
quantum
pixel unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711192644.5A
Other languages
Chinese (zh)
Inventor
翟保才
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EverDisplay Optronics Shanghai Co Ltd
Original Assignee
EverDisplay Optronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EverDisplay Optronics Shanghai Co Ltd filed Critical EverDisplay Optronics Shanghai Co Ltd
Priority to CN201711192644.5A priority Critical patent/CN109841647A/en
Publication of CN109841647A publication Critical patent/CN109841647A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to OLED field of display technology more particularly to a kind of OLED display module and displays by the application, for improving energy transformation ratio while meeting the feux rouges that sending wavelength is 610 nanometers to 650 nanometers.In the embodiment of the present application, OLED display module includes sub-pixel unit;Wherein, the sub-pixel unit includes cathode, anode and luminescent layer;Wherein, the cathode is located on the anode, and the luminescent layer is located on the anode, in the sub-pixel unit for when glowing, the luminescent layer to include quantum luminous material layer.The display module can improve color distortion phenomenon while meeting the feux rouges that sending wavelength is 610 nanometers to 650 nanometers, improve display module image quality.

Description

A kind of OLED display module and display
Technical field
The invention relates to OLED field of display technology more particularly to a kind of OLED display module and displays.
Background technique
As Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display technology is constantly sent out Exhibition, the wide colour gamut mode of DCI-P3 is gradually by the favor of user.
In order to meet the requirement of wide colour gamut mode, it is 610 nanometers that technical staff, which is researching and developing can issue wavelength always, (Nanometer, nm) to 650nm feux rouges material, in the prior art, can issue wavelength be 610nm to 650nm feux rouges Material be all organic synthesis material, the energy transformation ratio of this organic synthesis material is relatively low, equipment use this material When, it may appear that phenomena such as color distortion.
In conclusion needing a kind of OLED display module improvement color distortion phenomenon while meeting sending feux rouges, mention High display module image quality.
Summary of the invention
The embodiment of the present application provides a kind of OLED display module and display, for issue wavelength to be 610 nanometers meeting Energy transformation ratio is improved while to 650 nanometers of feux rouges.
The embodiment of the present application provides a kind of OLED display module, which includes sub-pixel unit;Wherein, institute Stating sub-pixel unit includes cathode, anode and luminescent layer;Wherein, the cathode is located on the anode, the luminescent layer position On the anode, in the sub-pixel unit for when glowing, the luminescent layer to include quantum luminous material layer.
Optionally, the quantum luminous material layer is used to issue the light of preset wavelength range;Wherein, the preset wavelength model It encloses are as follows: 610nm to 650nm.
Optionally, in the sub-pixel unit for when glowing, the luminescent layer to include: the first organic light emitting material With the first quantum luminous material layer;Wherein, first organic light emitting material is between the cathode and the anode;Institute The first quantum luminous material layer is stated to be located on the cathode;Wherein, first organic light emitting material is used in the sun Light is issued under the action of pole and the cathode;The first quantum luminous material layer is for absorbing first luminous organic material The light of the preset wavelength range is issued after the light that layer issues.
Optionally, the sub-pixel unit further includes the coating on cathode;It is used in the sub-pixel unit When glowing, the first quantum luminous material layer is positioned on layer.
Optionally, the light that the absorption peak of the first quantum luminous material layer and first organic light emitting material issue It is Wavelength matched.
Optionally, in the sub-pixel unit for when glowing, the luminescent layer to include the second quantum luminous material layer; Wherein, the second quantum luminous material layer is between the anode and the cathode;Wherein, the luminous material of second quantum The bed of material is used to issue the light of the preset wavelength range under the action of anode and the cathode.
Optionally, when the sub-pixel unit is used for blue light-emitting, the luminescent layer includes the second organic light emitting material; When the sub-pixel unit is used for green light, the luminescent layer includes third organic light emitting material.
Optionally, the material of the quantum luminous material layer is cadmium selenide.
Optionally, the thickness range of the amount luminous material layer is 10nm to 100nm.
The embodiment of the present application provides a kind of OLED display, and the OLED display includes described in above-mentioned any one OLED display module.
In the embodiment of the present application, OLED display module includes sub-pixel unit;Wherein, the sub-pixel unit includes yin Pole, anode and luminescent layer;Wherein, the cathode is located on the anode, and the luminescent layer is located on the anode, in institute Sub-pixel unit is stated for when glowing, the luminescent layer to include quantum luminous material layer.The display module issues red in satisfaction Improve color distortion phenomenon while light, improves display module image quality.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment Attached drawing is briefly introduced, it should be apparent that, the drawings in the following description are only some examples of the present application, for this For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings His attached drawing.
Fig. 1 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 2 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 3 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 4 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 5 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 6 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application;
Fig. 7 provides a kind of structural schematic diagram of OLED display module for the embodiment of the present application.
Specific embodiment
In order to which the purpose, technical solution and beneficial effect of the application is more clearly understood, below in conjunction with attached drawing and implementation Example, is further elaborated the application.It should be appreciated that specific embodiment described herein is only used to explain this Shen Please, it is not used to limit the application.
Fig. 1 shows a kind of structural schematic diagram of the applicable OLED display module of the embodiment of the present application, as shown in Figure 1, packet It includes: cathode 101, electron transfer layer 102, luminescent layer 103, hole transmission layer 104, hole injection layer 105 and anode 106.Wherein, The luminescent material of luminescent layer 103 is organic molecule material or organic polymer material, which is one for issuing The sub-pixel unit of green light or blue light.In the prior art, for issuing the display module structure of the sub-pixel unit of feux rouges As shown in Figure 1.
The principle of luminosity of sub-pixel unit are as follows: voltage is applied to sub-pixel unit.Under the action of extra electric field, electronics from Cathode 101 is injected by electron transfer layer 102 to luminescent layer 103, and hole injection layer 105 and hole are passed through from anode 106 in hole Transport layer 104 is injected to luminescent layer 103.Injected electrons and hole are combined into exciton in luminescent layer, and exciton generates photon, complete At luminescence process.
Since electron motion is slower, movement of hole is very fast, and therefore, between anode 106 and luminescent layer 103, hole needs By 105 double-layer structure of transport layer 104 and hole injection layer, hole and electronics could so be made to reach the time one of luminescent layer It causes, is more effectively combined into exciton.
Fig. 2 shows a kind of structural schematic diagrams for OLED display module that the embodiment of the present application is applicable in, as shown in Fig. 2, packet Include cathode 201, luminescent layer 202 and anode 203.
In the embodiment of the present application, which includes sub-pixel unit, wherein the sub-pixel unit includes yin Pole 201, luminescent layer 202 and anode 203;Wherein, the cathode 201 is located on the anode 203, the luminescent layer 202 On the anode 203;In the sub-pixel unit for when glowing, the luminescent layer 202 to include quantum luminescent material Layer.Fig. 2 is a kind of structural schematic diagram of applicable OLED display module in the embodiment of the present application.Optionally, in sub-pixel list Member is for when glowing, quantum luminescent material to be can be set on cathode 201.In the embodiment of the present application, OLED display module Including sub-pixel unit;Wherein, the sub-pixel unit includes cathode, anode and luminescent layer;Wherein, the cathode is located at described On anode, the luminescent layer is located on the anode, when the sub-pixel unit is used to glow, the luminescent layer packet Include quantum luminous material layer.The display module improves color while meeting the feux rouges that sending wavelength is 610 nanometers to 650 nanometers Color distortion phenomenon improves display module image quality.
Optionally, the quantum luminescent material in quantum luminous material layer can be a kind of semiconductor nano material, be inorganic Material.
In a kind of optional embodiment, quantum luminous material layer is used to issue the light of preset wavelength range;Wherein, described Preset wavelength may range from 610nm to 650nm, compared to the prior art in the chromaticity coordinates that issues of the sub-pixel unit that glows For the feux rouges of (0.66,0.33), the feux rouges color that quantum luminescent material issues is deeper, and chromaticity coordinates can achieve (0.68,0.32).
In a kind of optional embodiment, in sub-pixel unit for when glowing, the luminescent layer to include: first organic Luminous material layer and the first quantum luminous material layer;Wherein, first organic light emitting material is located at the cathode and described Between anode;The first quantum luminous material layer is located on the cathode;Wherein, first organic light emitting material is used In issuing light under the action of the anode and the cathode;The first quantum luminous material layer has for absorbing described first The light of the preset wavelength range is issued after the light that machine luminous material layer issues.
Fig. 3 shows a kind of structural schematic diagram of the applicable OLED display module of the embodiment of the present application, as indicated at 3, including Cathode 301, anode 302, the first organic light emitting material 303 and the first quantum luminous material layer 304.OLED display module is applied Making alive.Under the action of extra electric field, electronics is injected from cathode 301 to the first organic light emitting material 303, and hole is from anode 302 inject to the first organic light emitting material 303.Injected electrons and hole are compound in the first organic light emitting material 303 At exciton, exciton generates photon, and the first organic light emitting material 303 issues light, and the first quantum luminescent material 304, which absorbs first, to be had The light of preset wavelength range can be issued after the light that machine luminous material layer 303 issues, preset wavelength may range from 610nm extremely 650nm。
In a kind of optional embodiment, the sub-pixel unit further includes the coating on cathode;Described Sub-pixel unit is for when glowing, the first quantum luminous material layer to be positioned on layer.Fig. 4 shows the application reality A kind of structural schematic diagram of the applicable OLED display module of example is applied, as indicated at 4, including cathode 401, anode 402, first organic hair Optical material layer 403, the first quantum luminous material layer 404 and coating 405.The first organic material can be improved in coating 405 The injection rate of the light of sending, so that more light can be absorbed in the first quantum luminous material layer 404.
In a kind of optional embodiment, the absorption peak of the first quantum luminous material layer and first luminous organic material Layer issue light it is Wavelength matched.Optionally, the wavelength for the light that the first organic light emitting material issues can be close to the first amount Within some preset range of the absorption peak of sub- luminescent material.For example, it is assumed that the absorption peak of the first quantum luminous material layer Wavelength for 580nm, the then light that the first organic light emitting material issues can be in 575nm between 585nm.When first organic hair The wavelength for the light that optical material layer issues is when 575nm is between 585nm, the wave for the light that referred to as the first organic light emitting material issues The long absorption peak match with the first quantum luminous material layer.The absorption peak of first quantum luminous material layer is sent out according to the first quantum What the material properties of optical material layer determined.
Under the stimulation of luminous energy or electric energy, different materials and various sizes of quantum material can issue different wave length Light.Size can be the diameter of each particle in quantum material.In the embodiment of the present invention, determination can be issued specific according to demand First quantum luminous material layer of wavelength, technical staff can test the first quantum luminous material layer, determine this The absorption peak of one quantum luminous material layer determines the first organic light emitting material according to the absorption peak.
For example, according to customer demand, the sub-pixel unit to glow need to issue the feux rouges that wavelength is 630nm, according to Wavelength 630nm determines the first quantum luminous material layer, measures the absorption peak of the first quantum luminous material layer, it is assumed that first amount The absorption peak 580nm of sub- luminous material layer, determination can issue the first organic material luminescent layer of the light that wavelength is 580nm.
Sub-pixel can be under the action of extra electric field, and electronics is from cathode 401 to 403 note of the first organic light emitting material Enter, hole is injected from anode 402 to the first organic light emitting material 403, and injected electrons and hole are in the first organic light emission material Exciton is combined into the bed of material 403, exciton generates photon.First organic light emitting material 403 issues light, and the wavelength of the light is 580nm is just on the absorption peak of the first quantum luminescent material 404, and the light that the first organic light emitting material 403 issues passes through Coating 405 is absorbed by the first quantum luminescent material 404, and the first quantum luminescent material 404 issues the light that wavelength is 630nm.This Apply in embodiment, 580nm is a citing, and there is no limiting meanings.As long as in the first organic light emitting material absorption peak It just can be achieved in matched target wavelength range.
Fig. 5 shows a kind of structural schematic diagram of the applicable OLED display module of the embodiment of the present application, as figure 5 illustrates, comprising: Encapsulated layer 501, coating 502, cathode 503, electron transfer layer 504, hole transmission layer 505, hole injection layer 506 and anode 507, the first quantum luminous material layer between encapsulated layer 501 and coating 502 is located at electron transfer layer 504 and hole The first organic light emitting material, the second organic light emitting material and third organic light emitting material between transport layer 505.Its In, the first quantum luminous material layer is provided only in the top of the first organic light emitting material, the second organic light emitting material and There is no the first quantum luminous material layers of setting for the top of third organic light emitting material.This is because the light that sub-pixel issues exists The energy maximum of the surface of the luminous material layer of the sub-pixel is most concentrated, and there was only only a few energy on the direction of non-surface Release, and the wavelength for the light for cooperating the first organic light emitting material to issue is exactly in the suction of the first quantum luminous material layer Peak is received, the two combines, and the light that the first quantum luminous material layer can be made to absorb is substantially the first organic light emitting material hair Light out can issue the light that wavelength is 610nm to 650nm.
In the case where providing identical electric energy, the energy transformation ratio of organic synthesis material in the prior art is relatively low, And after the first quantum luminous material layer absorbs the light that the first organic light emitting material issues, it can be by the luminous energy being absorbed into major part The light for converting or being totally converted preset wavelength range can produce more excitons compared to organic synthesis material layer, therefore, The energy transformation ratio of quantum luminous material layer is higher, it is possible thereby to reduce using the display module comprising quantum luminous material layer The power consumption of equipment.
Fig. 6 shows a kind of structural schematic diagram of the applicable OLED display module of the embodiment of the present application, as indicated with 6, including Cathode 601, anode 602 and the second quantum luminous material layer 603.Sub-pixel unit is for when glowing, the luminescent layer to include Second quantum luminous material layer 603;Wherein, the second quantum luminous material layer 603 is located at the anode 602 and the cathode Between 601;Wherein, the second quantum luminous material layer 603 is used under the action of the anode 602 and the cathode 601 Issue the light of the preset wavelength range.
Voltage is applied to sub-pixel unit.Under the action of extra electric field, electronics luminous material from cathode 601 to the second quantum The bed of material 603 injects, and hole is injected from anode 602 to the second quantum luminous material layer 603.Injected electrons and hole are in the second amount Exciton is combined into sub- luminous material layer 603, the second quantum luminous material layer 603 can issue the light of preset range.
Fig. 7 shows a kind of structural schematic diagram of the applicable OLED display module of the embodiment of the present application, as shown with 7, comprising: Encapsulated layer 701, coating 702, cathode 703, electron transfer layer 704, hole transmission layer 705, hole injection layer 706 and anode 707, the second quantum luminous material layer, the second luminous organic material between electron transfer layer 704 and hole transmission layer 705 Layer and third organic light emitting material.Second quantum luminous material layer can be used for issuing the light that wavelength is 610nm to 650nm, Second organic light emitting material can be used for issuing green light, and third organic light emitting material can be used for blue light-emitting.
In a kind of optional embodiment, the second organic light emitting material can be used for issuing green light, third organic light emission Material layer can be used for blue light-emitting, not have quantum in the sub-pixel unit for blue light-emitting and the sub-pixel unit for green light Luminous material layer.And the luminescent layer in the sub-pixel unit for being used to glow is exactly quantum luminous material layer.
Since quantum dot light emitting material layer can issue the light that wave-length coverage is 0-3um, in a kind of optional embodiment, Quantum material light-emitting layer can be made to issue the light under wider colour gamut according to demand, for example, being more than chromaticity coordinates (0.68,0.32) Light.In a kind of optional embodiment, quantum luminous material layer is soluble in toluene or other organic solvents, is made into molten Liquid.The thin film-forming method of quantum luminous material layer can be printing, coating and evaporation film-forming, and optionally, the quantum of different materials is sent out The thin film-forming method of optical material layer is determined according to material properties.
In a kind of optional embodiment, the thin film-forming method of the second organic light emitting material and third organic light emitting material It can be printing or coating film forming, the second organic light emitting material and third organic light emitting material thickness can be 20nm- 150nm。
In a kind of optional embodiment, the material of the quantum luminous material layer is cadmium selenide zinc sulphide CdSe*Zns, It can also be unitary quantum dot (carbon quantum dot, silicon quantum dot);Binary quantum dot (ZnO, Cdse, ZnS, Pbs);Ternary quantum dots (CdSeTe,CuInS);Graphene quantum dot, perovskite quantum dot etc..
It is 0-3 microns that different materials and/various sizes of quantum luminous material layer, which can issue wave-length coverage, The light of (Micronmeter, um), technical staff can use different materials and/or various sizes of amount for different demands Sub- luminous material layer selects more flexible.
Again since different materials and/various sizes of quantum luminous material layer can issue the light that wave-length coverage is 0-3um, It can satisfy the wide colour gamut mode of DCI-P3, the colour gamut mode of gamut area than before is wider.
In a kind of optional embodiment, the thickness range of the quantum luminous material layer is 10nm to 100nm.
Since quantum dot light emitting material layer is inorganic material, and organic synthesis material in the prior art is organic material, Compare organic material, and the stability of inorganic material is higher.Therefore, the stabilization of the pixel unit with quantum dot light emitting material layer Property is far longer than the simple OLED device using luminous organic material as luminescent layer.
In a kind of optional embodiment, anode can be tin indium oxide (Indium Tin Oxide, ITO) material, at Film mode can be formed a film using chemical vapor deposition (Chemical Vapor Deposition, CVD), and the thickness of anode can be with It is 10nm-100nm.
In a kind of optional embodiment, cathode can be metal material.Optionally, it can be the combination of magnesium and silver, it is thick Degree is 10nm-200nm;Optionally, can be the combination of lithium fluoride and aluminium, wherein the thickness of lithium fluoride can be 1nm hereinafter, The thickness 10nm-200nm of aluminium.The thin film-forming method of cathode can be vapor deposition.
In a kind of optional embodiment, hole injection layer can be the polymer material of 3,4-rthylene dioxythiophene, at Film mode can be printing or coating film forming, and the thickness of hole injection layer can be 10nm-100nm.
In a kind of optional embodiment, hole transmission layer can be N, N- diphenyl-N, N- bis- -1, diphenyl -4 1-, 4- diamines high molecular material or N, N- diphenyl-N, N- bis- (3- aminomethyl phenyl) benzidine high molecular material etc., thin film-forming method It can be printing or coating film forming.
In a kind of optional embodiment, electron transfer layer can be quinolines material, thin film-forming method can be vapor deposition at The thickness of film, electron transfer layer can be 10nm-50nm.
The material of encapsulated layer can be glass, and flexible screen can be encapsulated using plural layers, and the thickness of encapsulated layer can be with It is 3um-1 millimeters (Millimeter, mm).
The embodiment of the present application provides a kind of OLED display, and the OLED display includes described in above-mentioned any one OLED display module.
In the embodiment of the present application, OLED display includes sub-pixel unit;Wherein, the sub-pixel unit include cathode, Anode and luminescent layer;Wherein, the cathode is located on the anode, and the luminescent layer is located on the anode, described Sub-pixel unit is for when glowing, the luminescent layer to include quantum luminous material layer.The display module is meeting sending wavelength For 610nm to 650nm feux rouges while improve color distortion phenomenon, improve display module image quality.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic Property concept, then additional changes and modifications can be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to include these modifications and variations.

Claims (10)

1. a kind of Organic Light Emitting Diode OLED display module characterized by comprising
Sub-pixel unit;Wherein, the sub-pixel unit includes cathode, anode and luminescent layer;Wherein, the cathode is located at described On anode, the luminescent layer is located on the anode;
In the sub-pixel unit for when glowing, the luminescent layer to include quantum luminous material layer.
2. OLED display module as described in claim 1, which is characterized in that the quantum luminous material layer is default for issuing The light of wave-length coverage;
Wherein, the preset wavelength range are as follows: 610 nanometers of nm to 650nm.
3. OLED display module as described in claim 1, which is characterized in that when the sub-pixel unit is used to glow, The luminescent layer includes: the first organic light emitting material and the first quantum luminous material layer;
Wherein, first organic light emitting material is between the cathode and the anode;First quantum shines material The bed of material is located on the cathode;
Wherein, first organic light emitting material is for issuing light under the action of the anode and the cathode;Described One quantum luminous material layer is used to issue the preset wavelength range after absorbing the light that first organic light emitting material issues Light.
4. OLED display module as claimed in claim 3, which is characterized in that the sub-pixel unit further include be located at cathode it On coating;
In the sub-pixel unit for when glowing, the first quantum luminous material layer to be positioned on layer.
5. OLED display module as claimed in claim 4, which is characterized in that the absorption peak of the first quantum luminous material layer With first organic light emitting material issue light it is Wavelength matched.
6. OLED display module as described in claim 1, which is characterized in that when the sub-pixel unit is used to glow, The luminescent layer includes the second quantum luminous material layer;
Wherein, the second quantum luminous material layer is between the anode and the cathode;
Wherein, the second quantum luminous material layer under the action of the anode and the cathode for issuing the default wave The light of long range.
7. OLED display module as described in claim 1, which is characterized in that when the sub-pixel unit is used for blue light-emitting, The luminescent layer includes the second organic light emitting material;
When the sub-pixel unit is used for green light, the luminescent layer includes third organic light emitting material.
8. OLED display module as described in claim 1, which is characterized in that the material of the quantum luminous material layer is selenizing Cadmium.
9. OLED display module as described in claim 1, which is characterized in that the thickness range that the quantum luminescent material is is 10 nanometers to 100 nanometers.
10. a kind of OLED display, which is characterized in that including OLED display module described in any one of claim 1-9.
CN201711192644.5A 2017-11-24 2017-11-24 A kind of OLED display module and display Pending CN109841647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711192644.5A CN109841647A (en) 2017-11-24 2017-11-24 A kind of OLED display module and display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711192644.5A CN109841647A (en) 2017-11-24 2017-11-24 A kind of OLED display module and display

Publications (1)

Publication Number Publication Date
CN109841647A true CN109841647A (en) 2019-06-04

Family

ID=66877265

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711192644.5A Pending CN109841647A (en) 2017-11-24 2017-11-24 A kind of OLED display module and display

Country Status (1)

Country Link
CN (1) CN109841647A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021017624A1 (en) * 2019-08-01 2021-02-04 武汉华星光电半导体显示技术有限公司 Electroluminescent device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576691A (en) * 2013-10-24 2015-04-29 三星显示有限公司 Organic light emitting display apparatus
CN106206871A (en) * 2016-08-03 2016-12-07 纳晶科技股份有限公司 The preparation method of luminescent device and luminescent device
CN106601923A (en) * 2016-12-19 2017-04-26 华南理工大学 Full-color display component for organic and inorganic quantum dot hybridization and preparing method thereof
CN106684112A (en) * 2016-11-23 2017-05-17 信利(惠州)智能显示有限公司 Organic light emitting display device and manufacture method thereof
US20170141162A1 (en) * 2015-11-16 2017-05-18 Industry-Academic Cooperation Foundation Yonsei University Display panel and apparatus including the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576691A (en) * 2013-10-24 2015-04-29 三星显示有限公司 Organic light emitting display apparatus
US20170141162A1 (en) * 2015-11-16 2017-05-18 Industry-Academic Cooperation Foundation Yonsei University Display panel and apparatus including the same
CN106206871A (en) * 2016-08-03 2016-12-07 纳晶科技股份有限公司 The preparation method of luminescent device and luminescent device
CN106684112A (en) * 2016-11-23 2017-05-17 信利(惠州)智能显示有限公司 Organic light emitting display device and manufacture method thereof
CN106601923A (en) * 2016-12-19 2017-04-26 华南理工大学 Full-color display component for organic and inorganic quantum dot hybridization and preparing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021017624A1 (en) * 2019-08-01 2021-02-04 武汉华星光电半导体显示技术有限公司 Electroluminescent device
US12035560B2 (en) 2019-08-01 2024-07-09 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light-emitting diode

Similar Documents

Publication Publication Date Title
CN105655495B (en) Quantum dot light emitting device and preparation method thereof and liquid crystal display device
Manders et al. High efficiency and ultra‐wide color gamut quantum dot LEDs for next generation displays
CN104051672B (en) OLED pixel structure
Shen et al. Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes
CN105185919B (en) Mixed type QLED and preparation method thereof
CN104319352B (en) A kind of top emitting white light OLED device and preparation method thereof, display device
Ji et al. Highly efficient flexible quantum-dot light emitting diodes with an ITO/Ag/ITO cathode
CN209282205U (en) A kind of display panel and display device
CN106953023B (en) Charge generation layer, stacked OLED device and display screen
CN107331789B (en) OLED display panel and preparation method thereof
CN106024844B (en) Organic luminescent device and preparation method thereof, display device
CN107230747A (en) The preparation method and OLED display panel of OLED display panel
CN106229393A (en) A kind of light emitting diode and preparation method thereof
CN105261709A (en) Organic light emitting device of doping quantum dots and manufacturing method thereof
CN206293474U (en) The enhanced blue light organic emissive diode of plasma resonance
Yin et al. Efficient and angle-stable white top-emitting organic light emitting devices with patterned quantum dots down-conversion films
CN108281568A (en) A kind of top emitting white light organic electroluminescent device and preparation method thereof
US20210343964A1 (en) Oled device and display device
CN111384257A (en) Quantum dot electroluminescent device and display
CN109841647A (en) A kind of OLED display module and display
CN109980105A (en) A kind of QLED device
Chen et al. Highly efficient white quantum dot light-emitting diode based on ZnO quantum dot
CN203746858U (en) Organic electroluminescence display panel
CN103715367B (en) Organic light emitting diode and electronic equipment
CN110165067A (en) Full-transparent inverted quantum dot light-emitting device, preparation method thereof and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190604

RJ01 Rejection of invention patent application after publication