CN106229393A - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
- Publication number
- CN106229393A CN106229393A CN201610821481.1A CN201610821481A CN106229393A CN 106229393 A CN106229393 A CN 106229393A CN 201610821481 A CN201610821481 A CN 201610821481A CN 106229393 A CN106229393 A CN 106229393A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- layer
- emitting diode
- oxide
- electron transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 39
- 230000005540 biological transmission Effects 0.000 claims abstract description 32
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 25
- 239000002096 quantum dot Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 230000005525 hole transport Effects 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- -1 hearth electrode Substances 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 14
- 238000003887 surface segregation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 58
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Open a kind of light emitting diode of the present invention and preparation method thereof, it includes step: depositions of bottom electrode on substrate；Then deposition of hole transport layer on hearth electrode；Then on hole transmission layer, deposit quantum dot light emitting layer；The last electron transfer layer that deposits on quantum dot light emitting layer, and it is deposited with top electrode on electron transfer layer, form light emitting diode；Wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.The present invention, by being doped inorganic nanometer oxide, utilizes surface segregation technology, reduces its surface energy, is passivated its surface defect, thus improves stability and the luminous efficiency of QLED device.Meanwhile, utilize inorganic nanometer oxide to prepare electronics and hole transmission layer simultaneously, the device architecture of organic cavity transmission layer before comparing, there is stability and the high feature of luminous efficiency, be also more suited for low cost large-scale typographical display technology.
Description
Technical field
The present invention relates to light emitting diode field, particularly relate to a kind of light emitting diode and preparation method thereof.
Background technology
Inorganic metal nano-oxide is widely used in organic electro-optic device as electrons transmission material in recent years
In, including Organic Light Emitting Diode, organic/perovskite photovoltaic device etc..Compared to organic material, inorganic metal nano-oxide
Solwution method not only can be used to prepare, and there is higher carrier mobility, simultaneously higher to the resistance of water oxygen, greatly
Improve the stability of device, paved the road of commercial applications.
Quantum dot is high due to its luminous efficiency, and glow color is controlled, and excitation advantages of higher, shows skill the next generation
Art has huge application potential.Except in lcd technology as down-conversion luminescent material improve display performance it
Outward, light emitting diode with quantum dots (QLED), as a kind of new Display Technique, has from main light emission, can the feature such as frivolous flexibility,
Just paid close attention to by people.
Nano zine oxide is electron transport material commonly used in QLED device, and its conduction level is conducive to electronics from the moon
Pole is to the injection of quantum dot, and its deeper valence-band level can play the effect effectively stopping hole.But nano zine oxide
Photoelectric properties and its particle size have the biggest relation, along with the minimizing of particle size, its film property improves, but simultaneously by
In the case of small size, specific surface area is very big, and therefore surface defect has the strongest quenching effect to electron hole pair, thus
Cause the device efficiency of QLED and the problem that stability is the most relatively low.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of light emitting diode and preparation side thereof
Method, it is intended to solve the device efficiency of existing QLED and the problem that stability is the most relatively low.
Technical scheme is as follows:
A kind of preparation method of light emitting diode, wherein, including step:
A, on substrate depositions of bottom electrode；
B, then deposition of hole transport layer on hearth electrode；
C, then deposition quantum dot light emitting layer on hole transmission layer；
D, the last electron transfer layer that deposits on quantum dot light emitting layer, and it is deposited with top electrode on electron transfer layer, form luminescence
Diode；
Wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.
The preparation method of described light emitting diode, wherein, in the inorganic nanometer oxide of doping, described inorganic nano oxygen
Compound is the one in zinc oxide, titanium oxide, nickel oxide, molybdenum oxide.
The preparation method of described light emitting diode, wherein, in the inorganic nanometer oxide of doping, described doped chemical is
One in aluminum, magnesium, manganese, indium, gallium.
The preparation method of described light emitting diode, wherein, in the inorganic nanometer oxide of doping, doped chemical quality accounts for
Gross mass percentage ratio is 0.01 ~ 15%.
A kind of light emitting diode, wherein, uses the preparation method of arbitrary described light emitting diode to be prepared from, institute
State light emitting diode include the most successively substrate, hearth electrode, hole transmission layer, quantum dot light emitting layer, electron transfer layer and
Top electrode；Wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.
Described light emitting diode, wherein, described substrate is glass substrate.
Described light emitting diode, wherein, the material of described hearth electrode be transparent conductive metal oxide ITO, FTO or
AZO。
Described light emitting diode, wherein, the material of described quantum dot light emitting layer is CdSe/ZnS, CdSe/CdZn, SeS/
The nucleocapsid structure semi-conducting materials such as ZnS, the 4-6 group semi-conducting material such as PbSe, PbS, the 3-5 race material such as InP, GaP and
The 1-3-6 race semi-conducting materials such as CuInS, CuGaS and their nucleocapsid structure semi-conducting material.
Described light emitting diode, wherein, the material of described top electrode is Al or Ag, Au.
Beneficial effect: the present invention uses the inorganic nanometer oxide of doping as described hole transmission layer and/or described electricity
The material of sub-transport layer, the inorganic nanometer oxide surface of doping can reduction be remarkably improved the stability of device, and surface
The passivation of defect significantly reduces the quenching effect to electron hole pair, improves the luminous efficiency of device.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method preferred embodiment of a kind of light emitting diode of the present invention.
Fig. 2 is the structural representation of the inorganic nano zinc oxide of a kind of doping of the present invention.
Fig. 3 is the structural representation of the present invention a kind of light emitting diode preferred embodiment.
Detailed description of the invention
The present invention provides a kind of light emitting diode and preparation method thereof, for making the purpose of the present invention, technical scheme and effect
Clearer, clear and definite, the present invention is described in more detail below.Only should be appreciated that specific embodiment described herein
In order to explain the present invention, it is not intended to limit the present invention.
Inorganic nanometer oxide is widely used in organic electro-optic device as electrons transmission material in recent years.
But inorganic nanometer oxide, along with the minimizing of particle size, surface defect increases, and surface can increase, in this case
Result in the strong quencher effect of electron hole pair in the unstability of its material and device, thus have impact on the life-span of device
And efficiency.In order to solve the problems referred to above, the present invention is by being doped inorganic nanometer oxide, thus obtains surface energy and table
The inorganic nanometer oxide of the doping that planar defect is the lowest, then uses the inorganic nanometer oxide of doping as electrons
Transmission material, thus improve efficiency and the life-span of device.
Specifically, the stream of the preparation method preferred embodiment of a kind of light emitting diode that Fig. 1, Fig. 1 are the present invention is referred to
Cheng Tu, as it can be seen, wherein, including step:
S100, on substrate depositions of bottom electrode；
In step S100, described substrate can be but be not limited to glass substrate, and the material of described hearth electrode can be but be not limited to
The transparent conductive oxide electrodes such as transparent conductive oxide electrode, such as ITO, FTO or AZO.
S200, then deposition of hole transport layer on hearth electrode；
S300, then deposition quantum dot light emitting layer on hole transmission layer；
In step S300, the material of quantum dot light emitting layer of the present invention can be CdSe/ZnS, CdSe/CdZn, SeS/ZnS etc.
Nucleocapsid structure semi-conducting material, the 4-6 group semi-conducting material such as PbSe, PbS, the 3-5 race material such as InP, GaP and CuInS,
The 1-3-6 race semi-conducting materials such as CuGaS and their nucleocapsid structure semi-conducting material.
S400, the last electron transfer layer that deposits on quantum dot light emitting layer, and it is deposited with top electrode on electron transfer layer, shape
Become light emitting diode.Preferably, the material of described top electrode can be but be not limited to Al, Ag or Au.
Wherein, the material of described hole transmission layer and/or the material of described electron transfer layer are the inorganic nano oxygen of doping
Compound.In other words, the material of hole transmission layer of the present invention and the material of described electron transfer layer is all or wherein it
One is the inorganic nanometer oxide of doping.The present invention, by being doped inorganic nanometer oxide, utilizes surface segregation technology,
Reduce its surface energy, be passivated its surface defect.Then the inorganic nanometer oxide utilizing doping is prepared electron transfer layer/hole and is passed
Defeated layer, reaches improve its stability and reduce the purpose of electron hole pair quenching effect, thus improves stablizing of QLED device
Property and luminous efficiency.
Specifically, in the inorganic nanometer oxide of doping, inorganic nanometer oxide of the present invention can be zinc oxide, oxygen
Change the one in titanium, nickel oxide, molybdenum oxide etc..Doped chemical can be aluminum, magnesium, manganese, the one in indium, gallium etc..Preferably, mix
In miscellaneous inorganic nanometer oxide, it is 0.01 ~ 15%(such as 2%, 5% or 10% that doped chemical quality accounts for gross mass percentage ratio).
It is described in detail as a example by the electron transport material of QLED device using nano zine oxide below.
Nano zine oxide is electron transport material conventional in QLED device, has mobility high, the advantages such as light transmission is good,
But owing to its particle size only has 3-5 nanometer, having the biggest specific surface, therefore one side surface defect concentration is relatively
Height, relatively strong to luminous cancellation at the interface of luminescent layer and electron transfer layer, the high surface energy that on the other hand small size causes also makes
Obtain the less stable of nano zinc oxide material, it is impossible to obtain long-life device, especially in blue light QLED device.Existing
In technology, the processing method of high annealing is generally used to reduce its surface defect or on electron transfer layer and the boundary of luminescent layer
Face is inserted one layer of barrier layer and is reduced the cancellation to electron hole pair.Both approaches has its limitation, high temperature process one to be
Adding cost, two is the performance that may destroy other functional layers, three be frivolous application advantage flexible with QLED technology not
It is consistent；The method adding barrier layer then increases the complexity of device architecture, yield may be caused to reduce, cost increase.
The advantages such as nano zine oxide is electron transport material conventional in QLED device, has mobility high, light transmission number,
But owing to its particle size only has 3-5 nanometer, having the biggest specific surface, therefore one side surface defect concentration is relatively
Height, relatively strong to luminous cancellation at the interface of luminescent layer and electron transfer layer, the high surface energy that on the other hand small size causes also makes
Obtain the less stable of nano zinc oxide material, it is impossible to obtain long-life device, especially in blue light QLED device.In order to
Overcome the surface defect utilizing nano zine oxide to exist when preparing QLED device electronic transport layer more and electron hole pair cancellation
The problem that effect is stronger, the technique that the present invention is adulterated by employing, nano zine oxide is carried out the doping of debita spissitudo, such as
Magnesium, aluminum, manganese, indium, gallium etc., by surface segregation effect, it is passivated surface defect, has been significantly reduced surface energy, has been similar to shape
Become a nucleocapsid structure (as shown in Figure 2).Such a processing method of the present invention be make nano zine oxide surface lack
Fall into and greatly reduce, not only reduce surface energy, improve the stability of material, and be passivated surface defect, decrease sending out
The quenching effects of electron hole pair in photosphere.Compared with the conventional method, the present invention just solves surface defect and table from material
The problem of face energy, in the case of not increasing device architecture and complicated process of preparation, can be effectively improved the efficiency of QLED device
And the life-span.
It should be noted that, the invention is not restricted to prepare above-mentioned each functional layer by deposition process, also by spin coating or beat
The methods such as print prepare above-mentioned each functional layer.
Based on said method, the present invention provides a kind of light emitting diode, and it uses arbitrary described light emitting diode
Preparation method be prepared from, described light emitting diode includes substrate, hearth electrode, hole transmission layer, quantum the most successively
Point luminescent layer, electron transfer layer and top electrode；Wherein, the material of described hole transmission layer and/or described electron transfer layer is to mix
Miscellaneous inorganic nanometer oxide.The present invention uses the inorganic nanometer oxide of doping as hole transmission layer and/or electric transmission
LED device prepared by the material of layer, and the device architecture of organic cavity transmission layer before comparing has stability and luminescence
The feature that efficiency is high, is also more suited for low cost large-scale typographical display technology.
Fig. 3 is the structural representation of a kind of light emitting diode preferred embodiment of the present invention, as it is shown on figure 3, light-emitting diodes
Pipe includes substrate 1, hearth electrode 2, hole transmission layer 3, quantum dot light emitting layer 4, electron transfer layer 5 and top electrode the most successively
6, wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.Make with existing
Different with the transmission material in hole as electronics with general organic material, the present invention uses the inorganic nanometer oxide conduct of doping
The transmission material in electronics and hole, has mobility higher, and stability is more preferable, is also more suited for low cost and prints aobvious on a large scale
Show technology.Certainly the invention is not restricted to above-mentioned each functional layer, the present invention also can introduce electron injecting layer, electronics in the device structure
The internal carrier of the functional layer balancing devices such as barrier layer, hole blocking layer, exciton confining layers, to improve device performance.
In sum, a kind of light emitting diode that the present invention provides and preparation method thereof, the present invention is by inorganic nano
Oxide is doped, and utilizes surface segregation technology, reduces its surface energy, is passivated its surface defect, thus improves QLED device
Stability and luminous efficiency.Meanwhile, utilize inorganic nanometer oxide to prepare electronics and hole transmission layer simultaneously, compare and have before
The device architecture of machine hole transmission layer, has stability and the high feature of luminous efficiency, is also more suited for low cost large-scale
Typographical display technology.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved according to the above description or to convert, all these modifications and variations all should belong to the guarantor of claims of the present invention
Protect scope.
Claims (9)
1. the preparation method of a light emitting diode, it is characterised in that include step:
A, on substrate depositions of bottom electrode；
B, then deposition of hole transport layer on hearth electrode；
C, then deposition quantum dot light emitting layer on hole transmission layer；
D, the last electron transfer layer that deposits on quantum dot light emitting layer, and it is deposited with top electrode on electron transfer layer, form luminescence
Diode；
Wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.
The preparation method of light emitting diode the most according to claim 1, it is characterised in that the inorganic nanometer oxide of doping
In, described inorganic nanometer oxide is the one in zinc oxide, titanium oxide, nickel oxide, molybdenum oxide.
The preparation method of light emitting diode the most according to claim 1, it is characterised in that the inorganic nanometer oxide of doping
In, described doped chemical is the one in aluminum, magnesium, manganese, indium, gallium.
The preparation method of light emitting diode the most according to claim 1, it is characterised in that the inorganic nanometer oxide of doping
In, it is 0.01 ~ 15% that doped chemical quality accounts for gross mass percentage ratio.
5. a light emitting diode, it is characterised in that the preparation side of employing light emitting diode as described in claim 1 ~ 4 is arbitrary
Method is prepared from, described light emitting diode include the most successively substrate, hearth electrode, hole transmission layer, quantum dot light emitting layer,
Electron transfer layer and top electrode；
Wherein, the material of described hole transmission layer and/or described electron transfer layer is the inorganic nanometer oxide of doping.
Light emitting diode the most according to claim 5, it is characterised in that described substrate is glass substrate.
Light emitting diode the most according to claim 5, it is characterised in that the material of described hearth electrode is transparent conductive metal
Oxide ITO, FTO or AZO.
Light emitting diode the most according to claim 5, it is characterised in that the material of described quantum dot light emitting layer is CdSe/
ZnS, CdSe/CdZn or SeS/ZnS.
Light emitting diode the most according to claim 5, it is characterised in that the material of described top electrode is Al, Ag or Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610821481.1A CN106229393A (en) | 2016-09-14 | 2016-09-14 | A kind of light emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610821481.1A CN106229393A (en) | 2016-09-14 | 2016-09-14 | A kind of light emitting diode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106229393A true CN106229393A (en) | 2016-12-14 |
Family
ID=58075387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610821481.1A Pending CN106229393A (en) | 2016-09-14 | 2016-09-14 | A kind of light emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106229393A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019001026A1 (en) * | 2017-06-28 | 2019-01-03 | Tcl集团股份有限公司 | Preparation method for metal oxide nanoparticle film and electrical component |
| CN109390441A (en) * | 2017-08-03 | 2019-02-26 | Tcl集团股份有限公司 | QLED device |
| CN109970356A (en) * | 2017-12-28 | 2019-07-05 | Tcl集团股份有限公司 | Nano zinc oxide material and preparation method thereof, luminescent device |
| CN109994621A (en) * | 2017-12-29 | 2019-07-09 | Tcl集团股份有限公司 | Laminated film and its preparation method and application |
| CN112687820A (en) * | 2020-12-29 | 2021-04-20 | 广东聚华印刷显示技术有限公司 | QLED device, preparation method of QLED device and display device |
| CN113054143A (en) * | 2019-12-27 | 2021-06-29 | Tcl集团股份有限公司 | Nano material, preparation method thereof and quantum dot light-emitting diode |
| CN113130631A (en) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | Heterojunction nano material, preparation method thereof, thin film and quantum dot light-emitting diode |
| WO2022143568A1 (en) * | 2020-12-30 | 2022-07-07 | Tcl科技集团股份有限公司 | Composite electron transport material and preparation method therefor, and light-emitting diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120138894A1 (en) * | 2009-07-07 | 2012-06-07 | University Of Florida Research Foundation Inc. | Stable and all solution processable quantum dot light-emitting diodes |
| CN102800809A (en) * | 2011-05-27 | 2012-11-28 | 浦项工科大学校产学协力团 | Simplified organic electronic device employing polymeric anode with high work function |
| CN105161626A (en) * | 2015-06-23 | 2015-12-16 | 广东茵坦斯能源科技有限公司 | Doped nano tin compound organic light emitting device |
| CN105552184A (en) * | 2016-01-20 | 2016-05-04 | Tcl集团股份有限公司 | All-inorganic quantum dot light emitting diode and preparation method therefor |
-
2016
- 2016-09-14 CN CN201610821481.1A patent/CN106229393A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120138894A1 (en) * | 2009-07-07 | 2012-06-07 | University Of Florida Research Foundation Inc. | Stable and all solution processable quantum dot light-emitting diodes |
| CN102800809A (en) * | 2011-05-27 | 2012-11-28 | 浦项工科大学校产学协力团 | Simplified organic electronic device employing polymeric anode with high work function |
| CN105161626A (en) * | 2015-06-23 | 2015-12-16 | 广东茵坦斯能源科技有限公司 | Doped nano tin compound organic light emitting device |
| CN105552184A (en) * | 2016-01-20 | 2016-05-04 | Tcl集团股份有限公司 | All-inorganic quantum dot light emitting diode and preparation method therefor |
Non-Patent Citations (1)
| Title |
|---|
| 张静等: "《有效抑制掺杂表面偏析效应的LT-MBE技术》", 《中国电子学会第八届青年学术年会暨中国电子学会青年工作委员会成立十周年学术研讨会》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019001026A1 (en) * | 2017-06-28 | 2019-01-03 | Tcl集团股份有限公司 | Preparation method for metal oxide nanoparticle film and electrical component |
| US11851343B2 (en) | 2017-06-28 | 2023-12-26 | Tcl Technology Group Corporation | Preparation method for metal oxide nanoparticle film and electrical component |
| CN109390441A (en) * | 2017-08-03 | 2019-02-26 | Tcl集团股份有限公司 | QLED device |
| CN109970356A (en) * | 2017-12-28 | 2019-07-05 | Tcl集团股份有限公司 | Nano zinc oxide material and preparation method thereof, luminescent device |
| CN109970356B (en) * | 2017-12-28 | 2020-09-25 | Tcl科技集团股份有限公司 | Zinc oxide nano material, preparation method thereof and luminescent device |
| CN109994621A (en) * | 2017-12-29 | 2019-07-09 | Tcl集团股份有限公司 | Laminated film and its preparation method and application |
| CN113054143A (en) * | 2019-12-27 | 2021-06-29 | Tcl集团股份有限公司 | Nano material, preparation method thereof and quantum dot light-emitting diode |
| CN113130631A (en) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | Heterojunction nano material, preparation method thereof, thin film and quantum dot light-emitting diode |
| CN112687820A (en) * | 2020-12-29 | 2021-04-20 | 广东聚华印刷显示技术有限公司 | QLED device, preparation method of QLED device and display device |
| WO2022143568A1 (en) * | 2020-12-30 | 2022-07-07 | Tcl科技集团股份有限公司 | Composite electron transport material and preparation method therefor, and light-emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106229393A (en) | A kind of light emitting diode and preparation method thereof | |
| CN105206718B (en) | The inorganic perovskite light emitting diode with quantum dots of CsPbX3 prepared by a kind of solwution method | |
| CN105655495B (en) | Quantum dot light emitting device and preparation method thereof and liquid crystal display device | |
| US10826009B2 (en) | Quantum dot light-emitting diode and display apparatus thereof | |
| CN106098956A (en) | A kind of QLED and preparation method thereof | |
| CN105206715B (en) | A kind of QLED and preparation method thereof of exciton confinement structure | |
| CN103972416B (en) | Semiconductor quantum dot LED based on reverse structure and preparation method thereof | |
| CN108963087A (en) | Quanta point electroluminescent device and display | |
| CN109390479A (en) | A kind of QLED device and preparation method thereof based on composite luminescence layer | |
| CN104409650A (en) | Light emitting device and manufacturing method thereof as well as display device and optical detection device | |
| CN105304829B (en) | A kind of double-side light emitting diode with quantum dots and preparation method thereof | |
| CN105576139A (en) | Quantum dot light-emitting diode (QLED) and preparation method therefor, and display | |
| CN105280829A (en) | Qled and preparation method thereof | |
| CN107958961A (en) | Series connection quantum dot light emitting device, panel, that is, display | |
| CN105826483A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN105261709A (en) | Organic light emitting device of doping quantum dots and manufacturing method thereof | |
| CN109980109A (en) | QLED device and preparation method thereof | |
| CN108269937A (en) | A kind of hydridization white light organic electroluminescent device of efficient high color rendering index (CRI) | |
| CN102244204B (en) | OLED device and preparation method thereof | |
| CN109449317A (en) | A kind of low temperature flexibility full-inorganic QLED device and preparation method thereof | |
| CN106098957B (en) | A kind of QLED and preparation method thereof | |
| CN107611229A (en) | A kind of method for exchanging driving and improving silicon based hetero-junction electroluminescent device stability of photoluminescence | |
| CN107611230A (en) | A kind of perovskite/silicon heterogenous electroluminescent device and preparation method | |
| CN106159108A (en) | A kind of QLED and preparation method thereof | |
| CN109427978A (en) | A kind of QLED device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161214 |