CN109831729B - Compact high-sensitivity MEMS micro-capacitance type sensor - Google Patents
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- CN109831729B CN109831729B CN201910092073.0A CN201910092073A CN109831729B CN 109831729 B CN109831729 B CN 109831729B CN 201910092073 A CN201910092073 A CN 201910092073A CN 109831729 B CN109831729 B CN 109831729B
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Abstract
The invention relates to a compact high-sensitivity MEMS micro-capacitive sensor, which comprises a substrate (10), a lower isolation layer (11), a lower electrode layer (12), an upper isolation layer (13), a sacrificial layer (14), a vibration film layer (15), an upper electrode layer (16) and an insulation layer (17) which are sequentially arranged from bottom to top, wherein the lower electrode layer (12) and the upper electrode layer (16) respectively comprise at least one electrode array unit (22), the electrode array unit (22) comprises a plurality of electrode units, and the edge of an electrode unit (19a) of the lower electrode layer (12) and/or the edge of an electrode unit (19b) of the upper electrode layer (16) is provided with a plurality of notches (20). The overlapping area of the electrode fixing part of the capacitor structure is reduced, so that the larger the capacitance change amplitude is when the diaphragm vibrates, the more remarkable the impedance transformation can be caused after the characteristic frequency is shifted.
Description
Technical Field
The invention belongs to the technical field of silicon micro machining, and particularly relates to a compact high-sensitivity MEMS micro-capacitance sensor.
Background
With the development of the internet of things, the demand of the MEMS sensor is increasing, and currently, many sensors detect environmental factors by using a capacitive structure, such as a gas sensor, a distance measurement sensor, an ultrasonic imaging sensor, a capacitive microphone, and the like.
The MEMS capacitive gas sensor based on characteristic frequency change is mainly characterized in that a gas adsorption material is deposited and spin-coated on the vibration part of the upper surface of the sensor, and the mass of the gas adsorption material can be slightly changed during adsorption and desorption. When the working frequency is high, for example, in an ultrasonic frequency band, the characteristic frequency can be changed due to slight mass change, so that the vibration frequency of the vibration part deviates from the characteristic frequency, the vibration amplitude is reduced, and the impedance structure of the capacitor structure is changed. The mass of the adsorbed gas can be calculated by detecting the impedance transformation amount of the capacitor structure. Thus, the lower the limit value of the detectable impedance transformation, the lower the limit value of the gas mass that can be detected, i.e. the higher the sensitivity of the sensor.
The electrode part of the traditional MEMS capacitive gas sensor generally adopts a circular shape, and the area of the upper electrode fixing part and the lower electrode fixing part is large, so that the effective area is relatively small when the sensor vibrates, and therefore, the sensitivity of the sensor is not good. In addition, the MEMS sensor has a small size, and the upper limit of the mass range of the gas that can be detected is low, and there is a certain deficiency in detecting some gases that exist in large quantities and have high requirements for accuracy.
Disclosure of Invention
The invention provides an MEMS micro-capacitance type sensor, which comprises a substrate, a lower isolation layer, a lower electrode layer, an upper isolation layer, a sacrificial layer, a vibration film layer, an upper electrode layer and an insulation layer which are sequentially arranged from bottom to top, wherein the lower electrode layer and the upper electrode layer respectively comprise at least one electrode array unit, each electrode array unit comprises a plurality of electrode units, and the edges of the electrode units of the lower electrode layer and/or the electrode units of the upper electrode layer are provided with a plurality of notches, so that the overlapping area of the electrode fixing part of a capacitance structure is reduced, and the larger the capacitance change amplitude is when the vibration film vibrates, the more remarkable the impedance transformation can be caused after the characteristic frequency shifts.
In the above MEMS micro capacitive sensor, the notches on the electrode units of the lower electrode layer and the upper electrode layer are staggered.
In the MEMS micro-capacitance sensor, the notches are uniformly distributed on the edge of the electrode unit.
In the MEMS micro capacitive sensor, the notch is circular, triangular, or rectangular.
In the above MEMS micro capacitive sensor, the gap is not more than 10um inward.
In the above MEMS micro capacitive sensor, the area of the upper electrode layer electrode unit is smaller than the area of the lower electrode layer electrode unit.
In the above MEMS micro capacitive sensor, the electrode unit is circular, and the diameter of the upper electrode layer electrode unit is 2 to 4um smaller than the diameter of the lower electrode layer electrode unit.
In the MEMS micro capacitive sensor, the connecting lines between the lower electrode layer electrode units are staggered from the connecting lines between the upper electrode layer electrode units, so that the overlapping area is reduced as much as possible.
In the MEMS micro-capacitance sensor, the length of the electrode array unit is gradually reduced and is in a step shape.
In the above MEMS micro capacitive sensor, the lower electrode layer and the upper electrode layer each include four electrode array units, and the four electrode array units of the lower electrode layer and the upper electrode layer are all connected to form a wheatstone bridge.
The invention reduces the overlapping area of the fixed part of the electrode of the capacitance structure on the basis of the electric bridge comparison amplifying circuit, so that the area of the vibratable part is higher relative to the total area during vibration, the capacitance change amplitude during vibration is larger, and the impedance transformation caused by characteristic frequency deviation is more obvious. The invention changes the layout of the electrode array units in the upper electrode layer and the lower electrode layer, so that the number of the capacitor structure units in the same area is more, and the detection range can be improved when the capacitor structure units are used for gas detection.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 shows a block diagram of a portion of a MEMS micro-capacitive sensor.
Fig. 2 shows a plan view of a lower electrode layer electrode unit.
Fig. 3 shows a plan view of an electrode unit of an upper electrode layer.
Fig. 4 shows a plan view of a sacrificial layer.
Fig. 5 shows a plan view of the lower electrode layer, the sacrificial layer, and the upper electrode layer when they are layered.
Fig. 6 shows a plan view of the electrode array unit structure.
Detailed Description
The MEMS micro-capacitance type sensor comprises a substrate 10, a lower isolation layer 11, a lower electrode layer 12, an upper isolation layer 13, a sacrificial layer 14, a vibration film layer 15, an upper electrode layer 16 and an insulation layer 17 which are sequentially arranged from bottom to top. The lower electrode layer 12 and the upper electrode layer 16 each include at least one electrode array unit 22, and the electrode array unit 22 includes a plurality of electrode units 19.
The substrate 10 is used for supporting and fixing, and can be a silicon wafer. The lower isolation layer 11 supports the lower electrode layer 12 and serves as an insulation protection, and may be SiO2、SiNxEtc. insulating material. The lower electrode layer 12 and the upper electrode layer 16 each include an electrode array formed of a plurality of electrode units 19A column unit 22. The upper electrode layer 16 is located above the lower electrode layer 12, and an electrode unit 19b of the upper electrode layer 16 is opposite to an electrode unit 19a of the lower electrode layer 12, and the two together form a vibratable capacitor structure. The material of the lower electrode layer 12 and the upper electrode layer 16 may be aluminum, polysilicon, or other conductive material. The upper isolation layer 13 is used for isolating and protecting the capacitor array structure and can be SiO2、SiNxEtc. insulating material. The sacrificial layer 14 may be made of a material with high corrosion selectivity, such as Al or Cr, and is used to form a cavity to provide a space for the vibration of the diaphragm layer 15. The sacrificial layers 14 are also distributed in an array, and are located right above the lower electrode layer 12, and the size of each sacrificial layer 14 is slightly smaller than that of the lower electrode layer 12, and the cavity of each sacrificial layer 14 is opposite to one electrode unit 19a of the lower electrode layer 12 and one electrode unit 19b of the upper electrode layer 16. The diaphragm layer 15 is used to support the upper electrode layer 16 and is located right below the upper electrode layer 16. The vibration film layer 15 drives the upper electrode layer 16 to vibrate together when vibrating, a vertically downward corrosion channel is etched on the vibration film layer 15, so that corrosive liquid can enter the sacrificial layer 14 below the corrosion film layer 15 through the corrosion channel. The erosion channel can be blocked by the electrode unit 19b of the upper electrode layer 16. The insulating layer 17 serves to protect the upper electrode layer 16 and serves as an insulating protection.
Fig. 1 shows the structure of a part of a MEMS micro capacitive sensor, in which the edges of the electrode cell 19a of the lower electrode layer 12 and the electrode cell 19b of the upper electrode layer 16 each have a plurality of notches 20. Alternatively, the notch 20 may be provided only at the edge of the electrode unit 19a of the lower electrode layer 12 or the electrode unit 19b of the upper electrode layer 16. The notches 20 on the electrode unit 19 can reduce the overlapping area of the electrode fixing part of the capacitance structure, and improve the sensitivity and stability of the sensor.
Referring to fig. 1, the notches 20 in the electrode units 19 of the lower electrode layer 12 and the upper electrode layer 16 are offset, but may not be offset. Referring to fig. 2 and 3, the notches 20 are uniformly distributed at the edge of the electrode unit 19. The area of the electrode unit 19b of the upper electrode layer 16 is smaller than that of the electrode unit 19b of the lower electrode layer 12, for example, when the electrode unit 19 is circular, the diameter of the circular electrode unit 19b of the upper electrode layer 16 is 2-4um smaller than that of the circular electrode unit 19a of the lower electrode layer 16, so that the dislocation caused by the error in the photoetching alignment can be prevented. The shape of the indentation 20 may be circular, or triangular, or rectangular, although other shapes are possible. The notches 20 are no more than 10um inward.
Referring to fig. 5, the connection lines 18 between the electrode units 19a of the lower electrode layer 12 are staggered from the connection lines 21 between the electrode units 19b of the upper electrode layer 16 to minimize the overlapping area. The connecting line between the electrode units can be a straight line, or a staggered oblique line, or a curve, etc.
Referring to fig. 6, the lower electrode layer 12 and the upper electrode layer 16 may have four electrode array units 22, respectively, i.e., the MEMS micro-capacitive sensor has four capacitances. The four electrode array units 22 of the lower electrode layer 12 and the upper electrode layer 16 are respectively connected to form a wheatstone bridge, so as to amplify weak original signals. The electrode array units 22 of the lower electrode layer 12 and the upper electrode layer 16 are gradually decreased in length and are in a step shape, so that the arrangement is more compact, and the space is fully utilized. When the four electrode array units 22 are arranged, the longer bottom faces outwards, the shorter top faces the central position of the electrode layer, the four electrode array units are connected at the central position, and the connecting line is shortened, so that the area utilization rate of the array is improved.
The upper electrode of the capacitor array is a vibratable film, synchronous vibration can be carried out according to the frequency of the upper electrode under the influence of electrified signals, and more obvious voltage amplitude variation can be obtained by processing signals of two poles of the capacitor array connected into a Wheatstone bridge through a voltage comparison method.
In the four independent capacitor arrays, the masses of the two capacitor array diaphragms which are connected in parallel and have different potentials are not changed, and the masses of the electrodes of the other two capacitor arrays are changed due to the adsorption of a detected object (such as gas). When alternating current with fixed characteristic frequency is introduced into the Wheatstone bridge, the mass of the vibrating diaphragm corresponding to the capacitor array is changed, the characteristic frequency shifts, the maximum dynamic displacement is reduced, the capacitance value of the capacitor array is changed, corresponding impedance changes are caused, and the measured electric signal can be amplified by comparing the node voltage.
The MEMS micro-capacitive sensor of the above embodiment can be fabricated by the following method:
step a, preparing SiO with a thickness of 200-1000 a on a substrate 10 by using a Chemical Vapor Deposition (CVD) method, a thermal oxidation method or a tetraethyl orthosilicate (TEOS) thermal decomposition method2Film of SiO2The thin film layer is the lower isolation layer 11.
And b, preparing a polycrystalline silicon or Al thin film with the thickness of 100-500 on the lower SiO2 thin film layer, wherein the polycrystalline silicon thin film layer is the lower electrode layer 12.
Step c, according to the designed array pattern, photoetching (litho-etch) is adopted for the lower electrode layer 12, a plurality of electrode units 19a with notches 20 at the edges are used as one electrode array unit 22, and the four electrode array units 22 are connected into a Wheatstone bridge.
Step d, preparing SiO with the thickness of 200-1000 a on the lower electrode layer 12 by adopting a Chemical Vapor Deposition (CVD) technology2Film of SiO2The thin film layer is the upper isolation layer 13.
Step e, SiO on2Preparing corrosion-prone materials such as Al or Cr with the thickness of 0.5-1.5 um on the thin film layer by adopting magnetron sputtering (FHR);
and f, etching the corrosion material into a structure arranged in an array by a photoetching method (litho-etch).
Step g, adopting Chemical Vapor Deposition (CVD) technology to continuously prepare SiO with the thickness of 0.5 um-1 um on the sacrificial layer 142The diaphragm layer 15 is a thin film.
And h, etching corrosion round holes on the vibration film layer 15 by a photoetching method (litho-etch), wherein the corrosion round holes are distributed at the upper end part of the corrosion channel of the sacrificial layer 14 and surround the round film, and corroding the sacrificial layer 14 by using a corrosive liquid.
Step i, preparing 0.2 um-0.5 um Al on the vibration film layer 15 by adopting magnetron sputtering (FHR) as the upper electrode layer 16, and sealing the corrosion round hole.
Step j, etching the electrode units 19b with the gaps 20 on the upper electrode layer 16 by a photoetching method (litho-etch), wherein a plurality of electrode units 19b are used as one electrode array unit 22, and the four electrode array units 22 are connected into a Wheatstone bridge.
And step k, adopting a Chemical Vapor Deposition (CVD) technology to continuously prepare a SiNx film with the thickness of 100 nm-300 nm on the upper electrode layer 16 as the insulating layer 17.
Claims (10)
1. An MEMS micro-capacitive sensor comprises a substrate (10), a lower isolation layer (11), a lower electrode layer (12), an upper isolation layer (13), a sacrificial layer (14), a vibration film layer (15), an upper electrode layer (16) and an insulation layer (17) which are sequentially arranged from bottom to top, wherein the lower electrode layer (12) and the upper electrode layer (16) respectively comprise at least one electrode array unit (22), the electrode array unit (22) comprises a plurality of electrode units, one electrode unit (19b) of the upper electrode layer (16) is over against one electrode unit (19a) of the lower electrode layer (12), the sacrificial layer (14) is distributed in an array manner, a cavity for providing a space for the vibration film layer (15) is arranged on the sacrificial layer (14), and the cavity is over against the electrode unit (19a) of the lower electrode layer (12) and the electrode unit (19b) of the upper electrode layer (16), and is characterized in that, the edge of the electrode unit (19a) of the lower electrode layer (12) and/or the electrode unit (19b) of the upper electrode layer (16) has a plurality of notches (20).
2. The MEMS micro-capacitive sensor according to claim 1, wherein the gaps (20) on opposing electrode units of the lower electrode layer (12) and the upper electrode layer (16) are staggered.
3. MEMS micro-capacitive sensor according to claim 1 or 2, characterized in that the gaps (20) are evenly distributed at the edges of the electrode unit.
4. The MEMS micro-capacitive sensor according to claim 1, wherein the shape of the gap (20) is circular, or triangular, or rectangular.
5. The MEMS micro-capacitive sensor according to claim 1, wherein the gap (20) is no more than 10um inward.
6. The MEMS micro-capacitive sensor according to claim 1, characterized in that the area of the electrode cells (19b) of the upper electrode layer (16) is smaller than the area of the electrode cells (19a) of the lower electrode layer (12).
7. The MEMS micro-capacitive sensor according to claim 1, wherein the electrode cells are circular and the diameter of the circular electrode cells of the upper electrode layer (16) is 2-4um smaller than the diameter of the circular electrode cells of the lower electrode layer (12).
8. The MEMS micro-capacitive sensor according to claim 1, characterized in that the connection lines (18) between the electrode cells (19a) of the lower electrode layer (12) are staggered from the connection lines (21) between the electrode cells (19b) of the upper electrode layer (16).
9. The MEMS micro-capacitive sensor according to claim 1, wherein the electrode array unit (22) has a stepped shape with a length gradually decreasing.
10. MEMS micro-capacitive sensor according to claim 1, 8 or 9, characterized in that the lower electrode layer (12) and the upper electrode layer (16) each comprise four electrode array elements (22), and the four electrode array elements (22) of the lower electrode layer (12) and the upper electrode layer (16) are each connected to form a wheatstone bridge, respectively.
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