CN109801975A - Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film - Google Patents
Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film Download PDFInfo
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- CN109801975A CN109801975A CN201910034420.4A CN201910034420A CN109801975A CN 109801975 A CN109801975 A CN 109801975A CN 201910034420 A CN201910034420 A CN 201910034420A CN 109801975 A CN109801975 A CN 109801975A
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Abstract
The invention belongs to flexible device fields, for the bottom grating structure transistor for designing and preparing a kind of high-dielectric-coefficient grid medium layer based on a-IGZO film, using the low temperature process of magnetron sputtering, it is designed in relatively simple technique and prepares underdriven flexible thin-film transistor, abundant use of the transistor as circuit components, so that the flexible device may in the application offer of large scale integrated circuit and photoelectric device.For this reason, the technical scheme adopted by the present invention is that flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film, it is followed successively by ITO bottom gate, hafnium oxide HfO from bottom to top on PET substrate2Gate dielectric film and a-IGZO film, ITO bottom gate draw bottom gate thin film, top be arranged active, drain electrode, source, drain electrode respectively with HfO2Gate dielectric film and a-IGZO film connection.Present invention is mainly applied to flexible transistors to manufacture and design occasion.
Description
Technical field
The invention belongs to flexible device fields, and in particular to a kind of Gao Jie for being based on a-IGZO (amorphous indium gallium zinc) film
The structure of the bottom gate thin film transistor of electric constant gate dielectric layer designs and preparation method.
Background technique
Flexible electronic be by organic and inorganic material electronics element manufacturing on flexible, Drawability plastics or thin metal matrix plate
New electronic science and technology, all there is extensive use in fields such as information, the energy, medical treatment, national defence.Such as print RFID tag
(RFID), electronics surface mount, Organic Light Emitting Diode OLED, flexible electronic displays etc..With traditional integrated circuit (IC)
Technology is the same, and the main drive of flexible electronic technology development is manufacturing process and equipment.With more on the substrate of more large format
Low cost, which produces the smaller flexible electronic device of characteristic size, becomes the key of manufacture.The present invention is based on a- using a kind of
The novel process of IGZO film preparation forms bottom gate thin film, gate dielectric layer and active layer using magnetron sputtering, then passes through photoetching
Metal source and drain electrodes are formed, are expected in the future in wearable electronic, extensive flexible integration circuit etc. obtains extensive use.
Summary of the invention
In order to overcome the deficiencies of the prior art, normal the present invention is directed to design and prepare a kind of high dielectric based on a-IGZO film
The bottom grating structure transistor of number gate dielectric layer is designed and is made in relatively simple technique using the low temperature process of magnetron sputtering
Standby underdriven flexible thin-film transistor, enriches use of the transistor as circuit components, so that the flexible device is big
The application of scale integrated circuit and photoelectric device provides may.For this reason, the technical scheme adopted by the present invention is that being based on amorphous indium gallium
The flexible thin-film transistor manufacturing method of zinc film, steps are as follows:
A, it selects polyethylene terephtalate flexible material as substrate, PET puts into to fill acetone molten first
It in the beaker of liquid, then cleans 5 minutes in ultrasonic cleaner, will then be cleaned with acetone using aqueous isopropanol
PET cleans up acetone in ultrasonic cleaner, obtains more clean substrate；
B, 200nm thickness tin indium oxide ito film and 5nm thickness hafnium oxide HfO are plated on PET substrate using magnetron sputtering2
Bottom dielectric grid layer film；
C, one layer of a-IGZO film is formed on gate dielectric layer by the way of magnetron sputtering, as active layer；
D, AZ5214 photoresist is coated in a-IGZO film surface, and uses sol evenning machine, setting revolving speed is 2000rpm, is turned
The dynamic time is 30s, and photoresist is got rid of uniformly, then be lithographically formed using litho machine and the mask plate made specific
Source-drain electrode pattern；
E, the gold of one layer of 100nm is deposited in film surface in such a way that vacuum electron beam is deposited, leaked electricity as source metal
Pole；
F, after getting rid of photoresist in acetone soln, a complete transistor is just prepared and is completed.
Based on the flexible thin-film transistor of amorphous indium gallium zinc film, it is followed successively by ITO bottom gate, two from bottom to top on PET substrate
Hafnium oxide HfO2Gate dielectric film and a-IGZO film, ITO bottom gate draw bottom gate thin film, top be arranged active, drain electrode, source,
Drain electrode respectively with HfO2Gate dielectric film and a-IGZO film connection.
The features of the present invention and beneficial effect are:
The present invention can reduce the ghost effect of traditional silicon substrate substrate transistor using flexible substrate, and can be different
It works under bending degree, is provided for the large-scale integrated of high-performance flexible circuit and the extensive use of wearable electronic
It may.
Detailed description of the invention:
Attached drawing 1 is the 3 dimensional drawing of the flexible bottom gate thin film transistor based on a-IGZO film.
Attached drawing 2 is the sectional view of invention.
Specific embodiment
Technical program of the present invention lies in ITO bottom gate thin film, HfO are plated on PET substrate using magnetron sputtering technique2Grid
Deielectric-coating and a-IGZO film then form source-drain electrode by way of photoetching and vacuum electron beam vapor deposition, thus complete
At the preparation of transistor.
The main operational principle of the flexible bottom gate high-dielectric-coefficient grid medium layer film transistor based on a-IGZO film
Silica (SiO is based on tradition2) the difference of principle of transistor be that this kind of device belongs to depletion device, and it is traditional
SiO2Device belongs to enhancement device, and the working principle of depletion device is to lean on when not being biased in a-IGZO film
Will form conducting channel at the surface of nearly gate oxide, break-over of device, needing to apply negative bias voltage device in gate electrode could close,
Whether closed by grid voltage control device, by electric current between the source and drain of the voltage control device between control source-drain electrode, i.e.,
Saturation current.In addition, flexible substrate can reduce the ghost effect of traditional silicon substrate substrate transistor, and can be in different bendings
It works under degree, providing for the large-scale integrated of high-performance flexible circuit and the extensive use of wearable electronic can
Energy.
When not being biased in ITO bottom gate thin film, will be generated in the a-IGZO film surface close to gate dielectric layer
Conducting channel, when applying certain back bias voltage in ITO bottom gate thin film, with apply it is alive be gradually increased, a-IGZO is thin
Film at the surface of gate dielectric layer can due to negative voltage sucking action and accumulate more and more holes, between such source and drain
Conducting channel can be by pinch off, so that device is closed.Transistor in the present invention using high dielectric constant gate medium
Layer material can be made thinner compared with traditional dielectric layer material, and performance is more preferable, there is higher current on/off ratio, because
And such device has higher integrated level, has and is more widely applied.In addition, the present invention is integrated in the crystal in plastic supporting base
Tube device still can satisfy the normal work of device when plastic supporting base bending, can be in intelligent wearing, artificial skin, life
Object medical treatment, photoelectric device etc., which obtain, to be more widely applied.
Specific manufacture craft is as follows:
G, it selects PET flexible material as substrate, puts PET into the beaker for filling acetone soln first, then super
It is cleaned 5 minutes in sound wave washer, it then will in ultrasonic cleaner by the PET cleaned with acetone using aqueous isopropanol
Acetone cleans up, and obtains more clean substrate.
H, 200nm thickness ito film and 5nm thickness HfO are plated on PET substrate using magnetron sputtering2Bottom dielectric grid layer film.
I, one layer of a-IGZO film is formed on gate dielectric layer by the way of magnetron sputtering, as active layer.
J, AZ5214 photoresist is coated in a-IGZO film surface, and uses sol evenning machine, setting revolving speed is 2000rpm, is turned
The dynamic time is 30s, and photoresist is got rid of uniformly, then be lithographically formed using litho machine and the mask plate made specific
Source-drain electrode pattern.
K, the gold of one layer of 100nm is deposited in film surface in such a way that vacuum electron beam is deposited, leaked electricity as source metal
Pole.
L, after getting rid of photoresist in acetone soln, a complete transistor is just prepared and is completed.
Claims (2)
1. a kind of flexible thin-film transistor manufacturing method based on amorphous indium gallium zinc film, characterized in that steps are as follows:
A, it selects polyethylene terephtalate flexible material as substrate, PET is put into fill acetone soln first
It in beaker, then cleans 5 minutes in ultrasonic cleaner, then the PET cleaned with acetone is existed using aqueous isopropanol
Acetone is cleaned up in ultrasonic cleaner, obtains more clean substrate；
B, 200nm thickness tin indium oxide ito film and 5nm thickness hafnium oxide HfO are plated on PET substrate using magnetron sputtering2Bottom is situated between
Matter grid layer film；
C, one layer of a-IGZO film is formed on gate dielectric layer by the way of magnetron sputtering, as active layer；
D, AZ5214 photoresist being coated in a-IGZO film surface, and using sol evenning machine, setting revolving speed is 2000rpm, when rotation
Between be 30s, photoresist is got rid of uniformly, then litho machine and the mask plate made is used to carry out being lithographically formed specific source and drain
Electrode pattern；
E, the gold of one layer of 100nm is deposited in film surface in such a way that vacuum electron beam is deposited, as metal source and drain electrodes；
F, after getting rid of photoresist in acetone soln, a complete transistor is just prepared and is completed.
2. a kind of flexible thin-film transistor based on amorphous indium gallium zinc film, characterized in that based on the soft of amorphous indium gallium zinc film
Property thin film transistor (TFT) is followed successively by ITO bottom gate, hafnium oxide HfO on PET substrate from bottom to top2Gate dielectric film and a-IGZO film,
ITO bottom gate draw bottom gate thin film, top be arranged active, drain electrode, source, drain electrode respectively with HfO2Gate dielectric film and a-IGZO
Film connection.
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| CN201910034420.4A CN109801975A (en) | 2019-01-15 | 2019-01-15 | Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film |
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| CN201910034420.4A CN109801975A (en) | 2019-01-15 | 2019-01-15 | Flexible thin-film transistor and its manufacturing method based on amorphous indium gallium zinc film |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110398528A (en) * | 2019-06-10 | 2019-11-01 | 深圳大学 | A kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT) |
| CN110444601A (en) * | 2019-07-29 | 2019-11-12 | 天津大学 | Amorphous indium gallium zinc oxide thin-film transistor and its manufacturing method |
| CN110571277A (en) * | 2019-08-23 | 2019-12-13 | 天津大学 | Flexible indium zinc oxide thin film transistor and preparation method thereof |
| CN110690118A (en) * | 2019-09-27 | 2020-01-14 | 天津大学 | Amorphous indium gallium zinc oxide thin film transistor and manufacturing method thereof |
| CN111029341A (en) * | 2019-11-14 | 2020-04-17 | 天津大学 | Flexible bottom gate flash memory device with calcium copper titanate gate dielectric layer and manufacturing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110398528A (en) * | 2019-06-10 | 2019-11-01 | 深圳大学 | A kind of antituberculosis drugs screening plant and method based on liquid grid-type IGZO thin film transistor (TFT) |
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| CN110444601A (en) * | 2019-07-29 | 2019-11-12 | 天津大学 | Amorphous indium gallium zinc oxide thin-film transistor and its manufacturing method |
| CN110571277A (en) * | 2019-08-23 | 2019-12-13 | 天津大学 | Flexible indium zinc oxide thin film transistor and preparation method thereof |
| CN110690118A (en) * | 2019-09-27 | 2020-01-14 | 天津大学 | Amorphous indium gallium zinc oxide thin film transistor and manufacturing method thereof |
| CN111029341A (en) * | 2019-11-14 | 2020-04-17 | 天津大学 | Flexible bottom gate flash memory device with calcium copper titanate gate dielectric layer and manufacturing method thereof |
| CN111029341B (en) * | 2019-11-14 | 2023-12-12 | 天津大学 | Copper calcium titanate gate dielectric layer flexible bottom gate flash memory device and manufacturing method thereof |
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