CN109791911A - 基板载置台及基板载置台的制作方法 - Google Patents
基板载置台及基板载置台的制作方法 Download PDFInfo
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- CN109791911A CN109791911A CN201780060021.4A CN201780060021A CN109791911A CN 109791911 A CN109791911 A CN 109791911A CN 201780060021 A CN201780060021 A CN 201780060021A CN 109791911 A CN109791911 A CN 109791911A
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Classifications
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/3411—Constructional aspects of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明提供用于精密控制基板温度的载置台及其制作方法。或者,提供具有该载置台的成膜装置或膜加工装置。本发明提供用于载置基板的载置台,该载置台具有基材、和基材上的加热器层,加热器层具有第一绝缘膜、第一绝缘膜上的加热器线、和加热器线上的第二绝缘膜,加热器线含有一种以上选自钨、镍、铬、钴及钼中的金属。
Description
技术领域
本发明涉及基板载置台、或具有基板载置台的膜加工装置、成膜装置。
背景技术
半导体器件搭载在几乎全部的电子设备中,对电子设备的功能起着重要的作用。半导体器件是利用硅等所具有的半导体特性的器件,由包括半导体、以及绝缘体、导电体等的大量薄膜构成。这些薄膜的形成和加工通过光刻工艺进行。光刻工艺通常包括:使用蒸镀法、溅射法、化学气相沉积(CVD)法或基板的化学反应等形成薄膜;在薄膜上形成抗蚀剂膜;通过曝光、显影形成抗蚀剂掩模;利用蚀刻除去部分薄膜;除去抗蚀剂膜。
在光刻工艺的各步骤中,很多反应条件决定薄膜特性,其中之一是基板温度。大多情况下,通过调节设置有基板的载置台(以下,记作载置台)的温度可以控制基板温度。专利文献1、2中公开了一种载置台,其搭载有用于控制基板温度的加热器。作为加热器工作的电阻器夹在两片绝缘膜间,通过喷镀(金属喷镀)形成。
现有技术文献
专利文献
专利文献1:日本专利第5876992号公报
专利文献2:日本特表2012-090782号公报
发明内容
发明所要解决的课题
本发明的实施方式的课题之一为提供一种用于精密地控制基板温度的载置台及其制作方法。另外,本发明的实施方式的课题之一为提供一种具有该载置台的成膜装置、或者膜加工装置。
用于解决课题的手段
本发明的一个实施方式是用于载置基板的载置台。载置台具有基材和位于基材上的加热器层。加热器层具有第一绝缘膜、位于第一绝缘膜上的加热器线、和位于加热器线上的第二绝缘膜。加热器线含有选自钨、镍、铬、钴及钼中的金属。
本发明的一个实施方式是膜加工装置。膜加工装置具有腔室、用于向腔室内供给气体的导入管、用于降低腔室内的压力的排气装置、和用于载置基板的载置台。载置台具有基材、和位于基材上的加热器层。加热器层具有第一绝缘膜、位于第一绝缘膜上的加热器线、和位于加热器线上的第二绝缘膜。加热器线含有选自钨、镍、铬、钴及钼中的金属。
本发明的一个实施方式为用于载置基板的载置台的制作方法。制作方法包括:在基材上通过喷镀法形成第一绝缘膜;将含有选自钨、镍、铬、钴及钼中的金属的金属膜加工成布线形状;在第一绝缘膜上配置经加工的金属膜;在金属膜上通过喷镀法形成第二绝缘膜。
本发明的一个实施方式是成膜装置。成膜装置具有腔室、用于向腔室内供给气体的导入管、用于降低腔室内的压力的排气装置、和用于载置基板的载置台。载置台具有基材、和位于基材上的加热器层。加热器层具有第一绝缘膜、位于第一绝缘膜上的加热器线、和位于加热器线上的第二绝缘膜。加热器线含有选自钨、镍、铬、钴及钼中的金属。
附图说明
图1是表示本发明的一实施方式的膜加工装置的构成的图。
图2A是本发明的一实施方式的载置台的剖面示意图。
图2B是本发明的一实施方式的载置台的剖面示意图。
图2C是本发明的一实施方式的载置台的剖面示意图。
图3是本发明的一实施方式的载置台的立体示意图。
图4是本发明的一实施方式的载置台的立体示意图。
图5是表示本发明的一实施方式的成膜装置的构成的图。
图6是表示本发明的一实施方式的成膜装置的构成的图。
图7是表示本发明的一实施方式的成膜装置的构成的图。
图8A是表示本发明的一实施方式的载置台的制作方法的图。
图8B是表示本发明的一实施方式的载置台的制作方法的图。
图9A是表示本发明的一实施方式的载置台的制作方法的图。
图9B是表示本发明的一实施方式的载置台的制作方法的图。
图10A是表示本发明的一实施方式的载置台的制作方法的图。
图10B是表示本发明的一实施方式的载置台的制作方法的图。
图10C是表示本发明的一实施方式的载置台的制作方法的图。
图10D是表示本发明的一实施方式的载置台的制作方法的图。
图11A是表示本发明的一实施方式的载置台的制作方法的图。
图11B是表示本发明的一实施方式的载置台的制作方法的图。
图12A是表示本发明的一实施方式的载置台的制作方法的图。
图12B是表示本发明的一实施方式的载置台的制作方法的图。
图13A是表示本发明的一实施方式的载置台的制作方法的图。
图13B是表示本发明的一实施方式的载置台的制作方法的图。
具体实施方式
以下,针对本申请中公开的发明的各实施方式,一边参照附图一边进行说明。但是,本发明可以在不脱离其主旨的范围内以各种方式实施,不应解释成限于以下例举的实施方式的记载内容。
另外,对于附图而言,存在为了更明确地说明而与实际的方案相比示意性地表示各部分的宽、厚、形状等的情况,但这仅仅是一例,并不限定本发明的解释。另外,在本说明书和各图中存在下述情况:对于与关于已出现的附图说明过的要素具有相同功能的要素,标以相同的附图标记,并省略重复说明。
在本发明中,加工某一膜形成多个膜时,存在这些多个膜具有不同的功能、作用的情况。然而,这些多个膜来自在同一步骤中形成为同一层的膜,具有相同的层结构、相同的材料。因此,这些多个膜定义为存在于同一层中。
(第1实施方式)
以下,关于作为本发明的一个实施方式的载置台及具有该载置台的膜加工装置,使用图1至图4进行说明。
[1.膜加工装置]
作为本发明的第1实施方式的膜加工装置的一例,图1示出了用于针对各种膜进行干蚀刻的蚀刻装置。蚀刻装置100具有腔室102。腔室102提供空间,该空间用于对例如在硅基板、玻璃基板上形成的导电体、绝缘体、半导体等的膜进行蚀刻。
排气装置104与腔室102连接,由此,能够将腔室102内设定为减压气氛。在腔室102中还设置有用于导入反应气体的导入管106,经由阀108向腔室内导入蚀刻用的反应气体。作为反应气体,可以举出例如四氟化碳(CF4)、八氟环丁烷(c-C4F8)、十氟环戊烷(c-C5F10)、六氟丁二烯(C4F6)等含氟有机化合物。
在腔室102上部能够经由导波管110设置微波源112。微波源112具有用于供给微波的天线等,输出高频微波,例如2.45GHz的微波、13.56MHz的无线电波(RF)。由微波源112产生的微波通过导波管110传播到腔室102的上部,并经由包含石英、陶瓷等的窗口114导入腔室102内部。反应气体通过微波被等离子体化,通过等离子体中所含的电子、离子、自由基进行膜蚀刻。
在腔室102下部设置有用于载置基板的载置台122。基板设置在载置台122上。电源124与载置台122连接,高频电力被供给至载置台122,并且在与载置台表面、基板表面垂直的方向形成由微波产生的电场。在腔室102的上部、侧面可以进一步设置磁铁116、118、120。作为磁铁116、118、120,可以为永久磁铁,也可以为具有电磁线圈的电磁铁。通过磁铁116、118、120能够产生平行于载置台122及基板表面的磁场成分,并且通过与由微波产生的电场协作,等离子体中的电子受到洛伦兹力作用而共振,被束缚在载置台122及基板表面。其结果,能够使基板表面产生高密度的等离子体。
载置台122上还可以进一步连接用于将基板固定于载置台122的静电卡盘用的电源126、用于控制在载置台122内部回流的介质的温度的温度控制器128、用于控制设置于载置台122的加热器线154的加热器电源130。蚀刻装置100中,作为任意构成,还可以设置用于使载置台122旋转的旋转控制装置(无图示)。
[2.载置台]
图2A、图2B、图2C表示载置台122的剖面示意图。如图2A所示,载置台122具有基材140,在基材140上具有加热器层150。基材140的主要材料为金属,例如可以使用钛、铝、不锈钢等。基材140上可以设置开口142,用于在底面设置温度传感器。温度传感器可以利用热电偶等。
加热器层150主要具有三层。具体而言,加热器层150具有第一绝缘膜152、位于第一绝缘膜152上的加热器线154、位于加热器线154上的第二绝缘膜156(图2A)。在加热器层150内可以仅设置一根加热器线154,或者也可以设置多根加热器线154,各个加热器线可以由加热器电源130独立地控制。加热器线154通过第一绝缘膜152和第二绝缘膜156而电绝缘。通过从加热器电源130供给的电力对加热器线154进行加热,由此,控制载置台122的温度。
第一绝缘膜152、第二绝缘膜156可以含有无机绝缘体。无机绝缘体优选具有与构成基材140的金属的热膨胀率程度相同的热膨胀率,其差可以为0.2×10-6/K以上且为2.0×10-6/K以下、或为0.5×10-6/K以上且为1.0×10-6/K以下、或为0.7×10-6/K以上0.9×10-6/K。
作为无机绝缘体,具体而言可以举出氧化铝、氧化钛、氧化铬、氧化锆、氧化镁、氧化钇、或它们的复合氧化物等。例如在基材140使用钛、第一绝缘膜152和第二绝缘膜156使用氧化铝时,钛与氧化铝的热膨胀系数分别为8.4×10-6/K、7.7×10-6/K,其差小。因此,即使将载置台122加热至高温,也能够防止加热器层150从基材剥离,能够提高载置台122的耐久性。
作为氧化物以外的材料,可以使用碳化钨-钴(WC-Co)、碳化钨-镍(WC-Ni)、碳化铬-镍-铬(Cr3C2-Ni:Cr)等碳化物、氮化硼、氮化硅等氮化物。
第一绝缘膜152和第二绝缘膜156可以采用喷镀法形成。作为喷镀法,可以为陶瓷棒火焰喷镀法(对应日语:ローカロイド溶射法)、等离子体喷镀法、或将它们组合的喷镀法。
加热器线154可以含有通过通电而发热的金属。具体而言,可以含有选自钨、镍、铬、钴及钼中的金属。金属可以为含有这些金属的合金,例如,可以为镍与铬的合金、含有镍、铬及钴的合金。
加热器线154优选如下形成:通过蚀刻,对使用溅射法、有机金属CVD(MOCVD)法、蒸镀法、印刷法、电镀法等而形成的金属膜或金属箔另行加工,并将其配置在第一绝缘膜152上形成加热器线154。这是因为:在使用喷镀法形成加热器线154时,难以在整个加热器线154确保均匀的密度、厚度、宽度,而相对于此,通过蚀刻加工金属膜或金属箔时,能够形成这些物理参数的不均小的加热器线154。由此,能够精密地控制载置台122的温度,并且减小温度分布。
进而,由于上述合金与金属单体相比具有高体积电阻率,所以在加热器线154的布局、即平面形状相同的情况下,与使用金属单体时相比,能够增大加热器线154的厚度。因此,能够减小加热器线154的厚度不均,能够实现更小的温度分布。
作为任意构成,载置台122可以具有一个或多个同时贯通基材140和加热器层150的贯通孔144。在腔室102中可以设置氦气导入管,使得氦气等热传导率高的气体流向贯通孔144。由此,气体能够在载置台122与基板的间隙流动,将载置台122的热能高效地传递至基板。
如图2B所示,在载置台122的基材140内部,可以设置供控制基板温度的介质回流的槽(流路)146。作为介质,可以使用水、异丙醇、乙二醇等醇、硅油等液体介质。此时,基材140包括第一基材160和第二基材162,在第一基材160和第二基材162的一方或双方形成槽146,之后,第一基材160和第二基材162通过钎焊等接合。在对载置台122进行冷却时、进行加热时都可以使用介质。
通过温度控制器128(参见图1)控制了温度的介质流入槽146,由此,能够控制基材140的温度。但是,通过液体的介质进行的温度控制,响应缓慢,另外,精密的温度控制比较难。因此,优选使用介质粗略地控制基材140的温度,使用加热器层150内的加热器线154精密地控制基板的温度。由此,不仅能够进行精密的温度控制,而且能够高速地进行载置台122的温度调节。
载置台122还可以具有静电卡盘170(图2C),作为用于将基板固定在载置台122上的机构。静电卡盘170例如可以具有用绝缘性的膜174覆盖静电卡盘电极172的结构。通过向静电卡盘电极172施加高电压(数百V至数千V),利用在静电卡盘电极172产生的电荷、与在基板背面生成的、具有与在静电卡盘电极172产生的电荷相反极性的电荷的库伦力,能够固定基板。作为绝缘体,可以使用氧化铝、氮化铝、氮化硼等陶瓷。需要说明的是,绝缘性的膜174不需要是完全绝缘的,也可以具有某程度的导电性(例如109Ω·cm至1012Ω·cm级的电阻率)。此时,关于膜174,在上述陶瓷中掺杂有氧化钛、氧化锆、氧化铪等金属氧化物。在静电卡盘170的周边也可以设置用于确定基板位置的肋176。
图3、图4表示载置台122的立体示意图。图3、图4表示具有设置了槽146的基材140的载置台122。载置台122可以在基材140内具有用于与加热器线154电连接的开口164。另外,可以设置多个贯通孔144。再者,如图4所示,载置台不仅可以具有圆形、也可以具有长方形、正方形的形状。为后者的情况下,例如基材140、加热器层150的主面形成长方形或正方形。由此,载置台122上不仅能够载置例如圆形的硅晶片这样的半导体基板,还能够载置用于制作显示装置等的大型玻璃基板。
如上所述,本实施方式的蚀刻装置100中装备了具有加热器层150的载置台122,该加热器层150被采用喷镀法形成的第一绝缘膜152和第二绝缘膜156挟持。而且,加热器线154能够通过金属膜或金属箔的蚀刻而形成,因此,其厚度、宽度、密度在加热器线154内能够均匀。其结果,能够在载置台122的整面进行均匀的加热,能够对基板温度进行精密的控制和高速的调节。特别是,通过使用合金形成加热器线154,因其较高的体积电阻率,所以能够增大加热器线154的厚度,其结果,能够进一步减小厚度、宽度的不均,有助于更精密地控制基板温度。
(第2实施方式)
本实施方式中,使用图5至图7对具有第1实施方式所述的载置台122的各种成膜装置进行说明。对于与第1实施方式相同的构成,有时省略说明。
[1.CVD装置]
图5是作为成膜装置之一的CVD装置200的示意图。CVD装置200具有腔室202,提供使反应气体进行化学反应的场所。
排气装置204与腔室202连接,能够降低腔室202内的压力。腔室202中还设置有用于导入反应气体的导入管206,并经由阀208向腔室内导入成膜用的反应气体。作为反应气体,可以根据所制作的膜使用各种气体。气体在常温下可以为液体。例如,可以通过使用硅烷、二氯硅烷、四乙氧基硅烷等,形成硅、氧化硅、氮化硅等的薄膜。或者,通过使用氟化钨、三甲基铝等形成钨、铝等的金属薄膜。
可以与蚀刻装置100同样地在腔室202上部经由导波管210设置微波源212。由微波源212产生的微波通过导波管210而被导入腔室202内部。反应气体通过微波而等离子体化,通过等离子体所含的各种活性种,促进气体的化学反应,通过化学反应得到的产物沉积在基板上,形成薄膜。作为任意的结构,可以在腔室202内设置用于增大等离子体密度的磁铁244。在腔室202下部,设有第1实施方式中所述的载置台122,并且能够在基板设于载置台122上的状态下进行薄膜沉积。还可以与蚀刻装置100同样地在腔室202的侧面进一步设置磁铁216、218。
载置台122还可以进一步连接用于将高频电供给至载置台122的电源224、静电卡盘用的电源226、对在载置台122内部回流的介质进行温度控制的温度控制器228、对设置在载置台122中的加热器线154进行控制的加热器电源230。在CVD装置200中,作为任意构成,还可以进一步设置用于使载置台122旋转的旋转控制装置(无图示)。
[2.溅射装置]
图6是作为成膜装置之一的溅射装置300的示意图。溅射装置300具有腔室302,提供用于高速离子与靶碰撞以及此时产生的靶原子沉积的场所。
用于对腔室302内进行减压的排气装置304连接于腔室302。腔室302设有用于将氩气等溅射气体导入腔室302中的导入管306及阀308。
在腔室302下部设有用于保持靶(该靶含有成膜材料)且作为阴极发挥功能的靶载置台310,在其上设有靶312。靶载置台310连接有高频电源314,并且能通过高频电源314在腔室302内生成等离子体。
在腔室302上部能够设有第1实施方式中所述的载置台122。此时,在将基板设于载置台122下方的状态下进行薄膜的形成。可以与蚀刻装置100、CVD装置200同样地,载置台122进一步连接有用于将高频电供给至载置台122的电源324、静电卡盘用的电源326、温度控制器328、加热器电源330。溅射装置300中,作为任意构成,可以进一步设置用于使载置台122旋转的旋转控制装置(无图示)。
由在腔室302内产生的等离子体加速了的氩离子与靶312碰撞,靶312的原子被弹出。弹出的原子在挡板316打开的期间,飞向并沉积在设于载置台122下方的基板。
在本实施方式中,举例说明了载置台122设于腔室302的上部、靶载置台310设于腔室302下部的构成,但本实施方式并不限于该构成,也可以以靶位于载置台122上方的方式构成溅射装置300。或者,也可以以基板主面相对于水平面垂直地配置的方式设置载置台122,以与其对置的方式设置靶载置台310。
[3.蒸镀装置]
图7是作为成膜装置之一的蒸镀装置400的示意图。蒸镀装置400具有腔室402,提供用于蒸镀源410中的材料蒸发以及蒸发材料向基板沉积的空间。
腔室402连接有用于使腔室402内为高真空的排气装置404。在腔室402设有用于使腔室402恢复大气压的导入管406,经由阀408而将氮气、氩气等非活性气体导入腔室402内。
在腔室402上部能设有第1实施方式中所述的载置台122。在基板设于载置台122下方的状态下进行材料沉积。可以与蚀刻装置100、CVD装置200、溅射装置300同样地,在载置台122进一步连接有静电卡盘用的电源424、温度控制器426、加热器电源428。在蒸镀装置400,作为任意结构,可以进一步设有用于使载置台122旋转的旋转控制装置430。载置台122还可以具有用于将金属掩模固定在基板与蒸镀源410之间的掩模保持器416。由此,能够在基板附近配置金属掩模使得金属掩模的开口部与待沉积材料的区域重叠。
蒸镀源410设置在腔室的下侧,待蒸镀的材料被充填至蒸镀源410。蒸镀源410设有用于加热材料的加热器,加热器被控制装置412控制。使用排气装置404使腔室402内为高真空,加热蒸镀源410使材料气化,由此开始蒸镀。蒸镀的速度一定时打开挡板414,从而开始在基板上沉积材料。
如上所述,在本实施方式的CVD装置200、溅射装置300、蒸镀装置400等成膜装置中,能够具有实施方式1中所说明的载置台122。因此,能够精密地控制基板温度,并且良好地调节响应性,变得易于控制所形成的薄膜的物性。
(第3实施方式)
本实施方式中,使用图8A至图12B对实施方式1中所述的载置台122的制作方法进行说明。本实施方式中,针对图2C所示的载置台122的制作方法进行说明。图8A、图9A、图11A、图12A、图13A是载置台122的剖面示意图,图8B、图9B、图11B、图12B、图13B是载置台122的俯视示意图。关于与第1、第2实施方式相同的构成,有时省略记载。
首先,制作具有槽146的基材140。例如,针对含有钛的第二基材162实施切削加工,形成用于回流介质的槽146。槽146可以为一个,也可以为多个。当形成多个槽146时,可以独立地控制在各个槽中回流的介质。槽146可以设置在第一基材160和第二基材162中的任一方、或双方。此后,将第一基材160和第二基材162接合(图8A、图8B)。接合例如可以通过钎焊进行。作为钎料,例如可以举出含有银、铜及锌的合金、含有铜和锌的合金、含有微量磷的铜、铝或其合金、含有钛、铜及镍的合金、含有钛、锆及铜的合金、含有钛、锆、铜及镍的合金等。
接着,在第二基材162上形成第一绝缘膜152(图9A、图9B)。第一绝缘膜152可以含有第1实施方式中所述的无机绝缘体,可以通过喷镀形成。作为喷镀,如上所述,可以采用陶瓷棒火焰喷镀法、等离子体喷镀法中任一方法,或者也可以将它们组合。第一绝缘膜152的形成方法不限于喷镀,也可以采用溅射法等。根据需要,也可以在第一绝缘膜152的形成前或形成后形成开口142、164(参见图3)。
接着,在第一绝缘膜152上形成加热器线154。例如,在玻璃基板180上形成剥离层182,在其上形成金属膜(或金属箔,以下,总称为金属箔)184(图10A)。作为剥离层182,可以使用例如聚酰亚胺、聚酰胺、聚酯、聚硅氧烷等高分子材料。金属箔184也可以通过电镀法、MOCVD法、溅射法、印刷法或蒸镀法等形成。或者,也可以通过物理的拉伸加工来形成金属箔并设置在剥离层182上。对于金属箔的厚度,例如可以为0.1mm~2mm、或0.3mm~1mm,作为材料可以使用第1实施方式中所述的金属、合金。
接着,在金属箔184上形成抗蚀剂186,隔着光掩模190进行曝光(图10B)。然后,通过显影,在金属箔184上形成具有规定图案的光致抗蚀剂192(图10C)。针对从光致抗蚀剂192露出的区域194进行干蚀刻或湿蚀刻,除去从抗蚀剂掩模露出的区域,得到加热器线154的图案(图10D)。然后,从玻璃基板180的背面照射激光等光(图10D),降低玻璃基板180-剥离层182、或剥离层182-加热器线154之间的粘合力,然后在它们的界面剥离加热器线154。通过化学机械研磨(CMP)等在光刻之前研磨金属箔184或在光刻之后研磨加热器线154的表面,进行表面平坦化。
将所得的加热器线154设置在第一绝缘膜152之上(图11A、图11B)。此时,为了固定加热器线154,也可以在与第一绝缘膜152之间设置粘合剂。作为粘合剂,可以使用环氧系粘合剂、聚酰亚胺系粘合剂、硅系粘合剂等。粘合剂中也可以添加氧化钛、氧化铝、氧化硅等无机化合物的添加物。加热器线154不限于一根,也可以设置多根加热器线154。
之后,在加热器线154上形成第二绝缘膜156(图12A、图12B)。第二绝缘膜156可以采用与第一绝缘膜152相同的方法形成,可以含有与第一绝缘膜152相同的材料。可以通过以上步骤形成加热器层150。
最后,作为任意构成,在加热器层150之上设置静电卡盘170(图13A、图13B)。静电卡盘170通过例如使用粘合剂而与第二绝缘膜156接合,由此能够与加热器层150接合。然后,根据需要可以形成贯通孔144。
通过以上工序,能够形成载置台122。如上所述,通过使用金属箔作为起始材料,能够形成具有均匀厚度、密度的加热器线154。另外,由于使用蚀刻、特别是干蚀刻加工金属箔形成加热器线154,所以能够形成具有均匀宽度的加热器线154。因此,能够精密地控制在载置台122上所载置的基板的温度,并且较好地调节响应性,进一步减小温度分布。其结果,通过使用本发明的实施方式的载置台122,能够精密地控制在基板上形成、加工的各种薄膜的结构、物性。
对于作为本发明的实施方式如上所述的各实施方式,只要不相互矛盾,则可以适当地组合实施。另外,对于在各实施方式的基础上本领域技术人员进行适当的技术特征的追加、删除或设计变更而得到的技术方案,只要具有本发明的要旨,则也包含在本发明的范围内。
另外,对于即使是与通过上述各实施方式所获得的作用效果不同的其他作用效果,但可由说明书的记载明确的效果、或者本领域技术人员能够容易地预测出的效果,当然也可理解为由本发明所获得的效果。
附图标记的说明
100:蚀刻装置、102:腔室、104:排气装置、106:导入管、108:阀、110:导波管、112:微波源、114:窗、116:磁铁、118:磁铁、120:磁铁、122:载置台、124:电源、126:电源、128:温度控制器、130:加热器电源、140:基材、142:开口、144:贯通孔、146:槽、150:加热器层、152:第一绝缘膜、154:加热器线、156:第二绝缘膜、160:第一基材、162:第二基材、164:开口、170:静电卡盘、172:静电卡盘电极、174:膜、176:肋、180:玻璃基板、182:剥离层、184:金属箔、186:抗蚀剂、190:光掩模、192:光致抗蚀剂、194:区域、200:CVD装置、202:腔室、204:排气装置、206:导入管、208:阀、210:导波管、212:微波源、216:磁铁、218:磁铁、224:电源、226:电源、228:温度控制器、230:加热器电源、244:磁铁、300:溅射装置、302:腔室、304:排气装置、306:导入管、308:阀、310:靶载置台、312:靶、314:高频电源、316:挡板、324:电源、326:电源、328:温度控制器、330:加热器电源、400:蒸镀装置、402:腔室、404:排气装置、406:导入管、408:阀、410:蒸镀源、412:控制装置、414:挡板、416:掩模保持器、424:电源、426:温度控制器、428:加热器电源、430:旋转控制装置。
Claims (8)
1.一种用于载置基板的载置台,所述载置台具有:
基材;和
所述基材上的加热器层,
所述加热器层具有:
第一绝缘膜;
所述第一绝缘膜上的加热器线;和
所述加热器线上的第二绝缘膜,
所述加热器线含有选自钨、镍、铬、钴及钼中的一种以上的金属。
2.如权利要求1所述的载置台,其中,
所述基材含有钛,
所述第一绝缘膜和第二绝缘膜含有氧化铝。
3.如权利要求1所述的载置台,其中,
所述基材具有供液体在内部流动的槽。
4.如权利要求1所述的载置台,其中,
所述加热器层上还具有静电卡盘。
5.一种用于载置基板的载置台的制作方法,包括:
在基材上通过喷镀法形成第一绝缘膜,
将含有选自钨、镍、铬、钴及钼中的金属的金属膜加工成布线形状,
在所述第一绝缘膜上配置经加工的所述金属膜,
在所述金属膜上通过喷镀法形成第二绝缘膜。
6.如权利要求5所述的制作方法,其中,
所述基材含有钛,
所述第一绝缘膜和第二绝缘膜含有氧化铝。
7.如权利要求5所述的制作方法,其中,
所述基材具有供液体在内部流动的槽。
8.如权利要求5所述的制作方法,其中,
还包括在所述第二绝缘膜上配置静电卡盘。
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JP2016190661A JP2018056333A (ja) | 2016-09-29 | 2016-09-29 | 基板載置台、および基板載置台の作製方法 |
JP2016-190661 | 2016-09-29 | ||
PCT/JP2017/021788 WO2018061336A1 (ja) | 2016-09-29 | 2017-06-13 | 基板載置台、および基板載置台の作製方法 |
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EP (1) | EP3522208A4 (zh) |
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JP6861235B2 (ja) * | 2019-04-04 | 2021-04-21 | 日本タングステン株式会社 | プラズマ処理装置用の部材、及び当該部材を備えるプラズマ処理装置 |
JP6845286B2 (ja) | 2019-08-05 | 2021-03-17 | 日本発條株式会社 | ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法 |
CN110502049B (zh) * | 2019-08-30 | 2021-05-07 | 北京北方华创微电子装备有限公司 | 卡盘温度控制方法、卡盘温度控制***及半导体设备 |
US20230009692A1 (en) * | 2021-07-07 | 2023-01-12 | Applied Materials, Inc | Coated substrate support assembly for substrate processing |
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WO2016080502A1 (ja) * | 2014-11-20 | 2016-05-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
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2016
- 2016-09-29 JP JP2016190661A patent/JP2018056333A/ja active Pending
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2017
- 2017-06-13 KR KR1020197011781A patent/KR20190051061A/ko not_active Application Discontinuation
- 2017-06-13 EP EP17855295.6A patent/EP3522208A4/en not_active Withdrawn
- 2017-06-13 WO PCT/JP2017/021788 patent/WO2018061336A1/ja unknown
- 2017-06-13 CN CN201780060021.4A patent/CN109791911A/zh active Pending
- 2017-07-12 TW TW106123347A patent/TWI677937B/zh active
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2019
- 2019-03-28 US US16/367,643 patent/US20190228953A1/en not_active Abandoned
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WO2018061336A1 (ja) | 2018-04-05 |
TWI677937B (zh) | 2019-11-21 |
JP2018056333A (ja) | 2018-04-05 |
EP3522208A1 (en) | 2019-08-07 |
EP3522208A4 (en) | 2020-05-13 |
TW201826437A (zh) | 2018-07-16 |
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US20190228953A1 (en) | 2019-07-25 |
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