CN109786209B - Device cleaning method - Google Patents
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- CN109786209B CN109786209B CN201711132320.2A CN201711132320A CN109786209B CN 109786209 B CN109786209 B CN 109786209B CN 201711132320 A CN201711132320 A CN 201711132320A CN 109786209 B CN109786209 B CN 109786209B
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Abstract
The invention provides a device cleaning method, which sequentially adopts cleaning liquid and replacement liquid to clean a substrate, wherein in the process of replacing and discharging the cleaning liquid by the replacement liquid, the substrate is rotated in a multi-stage variable speed mode to replace the cleaning liquid in a concave region of a patterned film layer, and the surface tension of the replacement liquid is smaller than that of the cleaning liquid, so that the force of the replacement liquid penetrating into the concave region of the patterned film layer is increased, the speed of replacing and discharging the cleaning liquid by the replacement liquid is accelerated, the cleaning capability and the drying efficiency are improved, and the whole cleaning time is reduced to achieve the purposes of improving the machine station performance, reducing the liquid usage amount, reducing the wastewater treatment cost and reducing the environmental pollution.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device cleaning method applied to an integrated circuit manufacturing process.
Background
Cleaning is one of the most important and frequent steps in the manufacturing process of semiconductor devices. Generally, particles generally remain on the wafer during storage, loading and unloading of the wafer, and throughout the manufacturing process of the semiconductor device. Therefore, a cleaning step is usually required to remove the particles remaining on the wafer. Particularly, after a pattern is formed on a wafer by wet etching, a chemical solution remaining in the wafer pattern needs to be cleaned and removed.
After the wet etching of the wafer, the wafer generally includes a water washing step of washing the wafer with a large amount of ultrapure water to remove etching liquid and fine dust, and a drying step of replacing the ultrapure water attached to the wafer with isopropyl alcohol (IPA) after the ultrapure water washing step, so as to prevent the wafer pattern from collapsing during the high-speed rotation process due to the excessive surface tension of water, and then performing spin drying.
However, as the semiconductor device scaling process continues to progress, the feature size of the device becomes smaller, the chemical solution between the wafer patterns and the deep bottom layer cannot be quickly cleaned away by introducing the ultra-pure water in the constant velocity direction, the fine dust adhered to the pattern gaps and the deep bottom layer cannot be effectively removed, and the ultra-pure water in the wafer pattern gaps and the deep bottom layer cannot be quickly and completely replaced by the IPA in the constant velocity direction, so that the surface tension of the ultra-pure water will cause pattern collapse during the spin drying of the subsequent wafer.
Disclosure of Invention
The invention mainly aims to provide a device cleaning method which can accelerate the cleaning rate of liquid to a pattern concave area and avoid the collapse of a substrate pattern.
To achieve the above object, the present invention provides a device cleaning method comprising:
providing a wafer substrate, wherein a patterned film layer is formed on a first surface of the substrate; and the number of the first and second groups,
and sequentially adopting a cleaning liquid and a displacement liquid to clean the substrate, and rotating the substrate in a multi-stage variable speed mode in the process of replacing and discharging the cleaning liquid by the displacement liquid so as to displace the cleaning liquid in the concave area of the patterned film layer, wherein the surface tension of the displacement liquid is smaller than that of the cleaning liquid.
Optionally, the multi-step variable speed manner includes repeatedly switching the rotation speed of the substrate between a first rotation speed and a second rotation speed during the cleaning process, and the second rotation speed is less than the first rotation speed, so that the replacement liquid penetrates into the recessed regions of the patterned film layer.
Optionally, the step of sequentially washing the substrate with the washing liquid and the displacing liquid comprises:
performing a liquid cleaning of the patterned film layer on the substrate with the cleaning liquid comprising an ultra-pure water component; and the number of the first and second groups,
performing surface tension-adjusting liquid displacement of the space within the recessed region of the patterned film layer with the displacement liquid comprising an isopropyl alcohol component;
rotating the substrate during both the liquid cleaning and the liquid displacing, the rotational speed of the substrate being repeatedly switched between the first rotational speed and the second rotational speed.
Optionally, in the process of replacing and discharging the cleaning liquid with the replacement liquid, a heat-conducting liquid with a temperature higher than the normal temperature is introduced onto the second surface of the substrate to stabilize the temperature of the substrate at a higher value higher than the normal temperature, and the first surface and the second surface are respectively located on two opposite sides of the substrate.
Optionally, the heat transfer liquid comprises an ultrapure water component, and the temperature of the ultrapure water component is between 70 and 80 ℃.
Optionally, the first rotation speed is 950 to 1050 rpm, and the second rotation speed is 270 to 330 rpm.
Optionally, a deceleration process is performed from the first rotation speed to the second rotation speed, and the deceleration process decelerates at a speed of 950 rpm to 1050 rpm; the process from the second rotating speed to the first rotating speed has an acceleration process, and the acceleration process is accelerated at a speed of 950-1050 revolutions/second.
Optionally, the time for maintaining the first rotation speed of the substrate every time is 5s to 7s, the time for maintaining the second rotation speed of the substrate every time is 5s to 7s, and the time for the deceleration process and the time for the acceleration process are both 0.65s to 0.75 s.
Optionally, during the initial stages of the liquid cleaning and the liquid displacing, the substrate is rotated from a stationary state and accelerated to the first rotation speed, the acceleration being 950 rpm21050 revolutions/second2。
Optionally, in the liquid washing, the flow rate of the washing liquid is 1275 ml/min to 1725 ml/min; in the liquid displacement, the flow rate of the displacement liquid is between 210 ml/min and 390 ml/min.
Optionally, during the process of replacing and discharging the cleaning liquid with the replacement liquid, the flow rate of the heat-conducting liquid is 360 ml/min to 440 ml/min.
Optionally, after the process of replacing and discharging the cleaning liquid by the replacement liquid, the device cleaning method further includes: and carrying out rotary drying on the substrate, and removing the replacement liquid remained in the patterned film layer in the substrate.
Optionally, the step of providing the wafer substrate includes: and forming a pattern of the patterned film layer in a chemical etching mode, wherein the patterned film layer comprises a plurality of support frame structure layers, and the recessed region of the patterned film layer comprises a plurality of capacitor mounting holes so as to be suitable for a capacitor manufacturing process of a dynamic random access memory chip.
Compared with the prior art, in the device cleaning method provided by the invention, the substrate is cleaned by sequentially adopting the cleaning liquid and the displacement liquid, in the process of replacing and discharging the cleaning liquid by the displacement liquid, the substrate is rotated in a multi-stage variable speed mode to displace the cleaning liquid in the concave area of the patterned film layer, and the surface tension of the displacement liquid is smaller than that of the cleaning liquid, so that the force of the displacement liquid penetrating into the concave area of the patterned film layer is increased, the speed of replacing and discharging the cleaning liquid by the displacement liquid is increased, the cleaning capacity and the drying efficiency are improved, and the whole cleaning time is reduced to achieve the purposes of improving the machine station capacity, reducing the usage amount of the liquid, reducing the wastewater treatment cost and reducing the environmental pollution.
Furthermore, the replacement liquid can completely replace and discharge the cleaning liquid in the depressed area of the patterned film layer, so that the patterned film layer is prevented from collapsing due to the surface tension of the cleaning liquid containing ultrapure water during the rotary drying of the subsequent substrate.
Drawings
Fig. 1a to 1f are schematic structural diagrams of steps of a wet etching and cleaning method.
FIGS. 2a 2b are schematic structural views of the water washing step.
FIGS. 3a to 4b are schematic structural views of the drying step.
Fig. 4a to 4d are schematic structural diagrams of steps of liquid cleaning according to an embodiment of the present invention.
Fig. 5a to 5d are schematic structural diagrams of steps of liquid replacement according to an embodiment of the present invention.
FIGS. 6 a-6 c are graphs showing the comparison of particle removal rate, pattern collapse rate, and displacement time of the displacing liquid.
Wherein the reference numbers are as follows:
10-a wafer;
11-a film layer;
12-granules or motes;
13-etching liquid;
14-ultrapure water;
15-isopropanol;
20-a wafer;
21-pattern;
22-granules or motes;
23-etching liquid;
24-ultrapure water;
25-isopropanol;
100-a substrate;
110-a patterned film layer;
112-a recessed region;
120-etching liquid;
130-a cleaning liquid;
140-a displacement liquid;
150-a thermally conductive liquid;
A/B/C/D-nozzle;
m1-the first surface of the substrate, M2-the second surface of the substrate.
Detailed Description
As mentioned above, in the whole manufacturing process of the semiconductor device, a cleaning step is often required to remove particles remaining on the wafer, and the following description will be given by taking cleaning after wet etching as an example, please refer to fig. 1a to 1e, which are schematic structural diagrams of steps of a wet etching and cleaning method.
First, as shown in fig. 1a, a wafer 10 is provided, a film layer 11 is formed on the wafer 10, and particles or particles 12 inevitably remain on the film layer 11 during the formation process. And etching the film layer 11 by a wet etching method, wherein in an etching chamber, the nozzle a ejects etching liquid 13 onto the film layer 11, an arrow in the figure represents a flowing direction of the etching liquid 13, that is, the nozzle a is located at one side edge of the wafer 10, the etching liquid 13 is ejected from the side edge, and the etching liquid 13 flows from one side edge of the wafer 10 to the opposite other side edge to etch the film layer 11. Next, as shown in fig. 1b, the film 11 is etched to a desired thickness, and the particles or particles 12 are suspended in the etching solution 13.
Then, referring to fig. 1c and fig. 1d, a water washing step is performed to wash the wafer 10 with a large amount of ultrapure water to remove the etching solution 13 and the particles or fine dust 12. Specifically, the nozzle B sprays ultrapure water 14 at one side edge of the wafer 10, and the ultrapure water 14 flows from one side edge of the wafer 10 to the opposite other side edge, so as to remove the etching solution 13 and the particles or the fine dust 12. The direction of the arrows in the figure represents the direction of flow of said ultrapure water 14.
Then, referring to fig. 1e and fig. 1f, a drying step is performed to replace the ultrapure water 14 attached to the wafer 10 with IPA, so as to prevent the ultrapure water from having an excessive surface tension and causing collapse of the pattern on the wafer 10 during the subsequent high-speed rotation. Specifically, the nozzle C sprays isopropyl alcohol (IPA)15 at one side edge of the wafer 10, and the IPA15 flows from one side edge of the wafer 10 to the opposite side edge to remove the ultrapure water 14. The direction of the arrows in the figure represents the direction of flow of the IPA 15.
And finally, carrying out spin drying on the wafer 10, wherein the ultrapure water 14 on the wafer 10 is replaced by the IPA15, so that the defect that the wafer pattern collapses due to the fact that the surface tension of the ultrapure water 14 is too high in the process of high-speed rotation is avoided.
However, as the semiconductor device scaling process continues to progress, the feature size of the device becomes smaller, and the ultrapure water or IPA introduced in the same direction as the wafer is not cleaned or dried, which may cause the wafer to collapse during spin drying. The specific analysis is as follows:
FIGS. 2a 2b are schematic structural views of the water washing step. As shown in fig. 2a, a plurality of layers of films are formed on a wafer 20, in the figure, taking three layers of films as an example, a nozzle a sprays etching liquid 23 to etch the films, a pattern 21 is formed on the wafer 20, a gap is formed in the pattern 21, and particles or fine dust 22 are remained on the pattern 21 and in the etching liquid 23. Next, referring to fig. 2B, the nozzle B ejects ultra-pure water 24, the ultra-pure water 24 flows from one side edge of the wafer 20 to the opposite side edge for removing the etching solution 23 and the particles or the fine dust 22, but because the gaps in the pattern 21 are relatively deep, the pattern 21 of the wafer and the etching solution 23 at the bottom of the deep layer of the pattern cannot be quickly cleaned by the ultra-pure water 24 with the same direction as the above-mentioned constant speed, and the particles or the fine dust 22 which are stubborn on the gaps of the pattern 21 and the deeper bottom cannot be effectively removed. The arrows in the figure represent the direction of flow of said ultrapure water 24.
FIGS. 3a to 4b are schematic structural views of the drying step. As shown in fig. 3a, the nozzle C sprays IPA25 on one side edge of the wafer 20, the IPA25 flows from one side edge of the wafer 10 to the opposite side edge, and the ultrapure water 24 is removed, but also because the gaps in the pattern 21 are relatively deep, the ultrapure water 24 hidden in the gaps of the pattern 21 on the wafer 10 and the deeper bottom cannot be quickly and completely replaced by the IPA25 in the same direction as the above-mentioned constant velocity, and finally the structure shown in fig. 3b is formed. The presence of the ultrapure water 24 in the deep bottom of the pattern 21 may cause collapse of the pattern 21 due to surface tension of the ultrapure water 24 during subsequent spin drying of the wafer.
The force F causing the collapse of the pattern 21 is related to the surface tension γ of the ultrapure water 25 remaining in the slit of the pattern 21, the contact angle θ, the width S of the slit, the height H of the ultrapure water 25, and the height D of the slit. In particular, the method comprises the following steps of,
therefore, it is essential to reduce the force F causing the collapse of the pattern 21 to avoid the collapse of the pattern 21, and to reduce or eventually avoid the remaining of the ultrapure water 24 in the gaps of the pattern 21.
In view of the above problems, the present inventors provide a device cleaning method, comprising:
providing a wafer substrate, wherein a patterned film layer is formed on a first surface of the substrate; and the number of the first and second groups,
and sequentially adopting a cleaning liquid and a displacement liquid to clean the substrate, and rotating the substrate in a multi-stage variable speed mode in the process of replacing and discharging the cleaning liquid by the displacement liquid so as to displace the cleaning liquid in the concave area of the patterned film layer, wherein the surface tension of the displacement liquid is smaller than that of the cleaning liquid.
In the device cleaning method provided by the invention, cleaning liquid and displacement liquid are sequentially adopted to clean the substrate, in the process of replacing and discharging the cleaning liquid by the displacement liquid, the substrate is rotated in a multi-stage variable speed mode to displace the cleaning liquid in the concave area of the patterned film layer, and the surface tension of the displacement liquid is smaller than that of the cleaning liquid, so that the force of the displacement liquid penetrating into the concave area of the patterned film layer is increased, the speed of replacing and discharging the cleaning liquid by the displacement liquid is increased, the cleaning capacity and the drying efficiency are improved, and the whole cleaning time is reduced to achieve the purposes of improving the machine performance, reducing the liquid usage amount, reducing the wastewater treatment cost and reducing the environmental pollution.
Thus, in the above-mentioned cleaning step, the ultrapure water 24 can quickly clean the pattern 21 of the wafer and the etching liquid 23 at the bottom of the deep layer of the pattern, and effectively remove the particles or the fine dust 22 which have adhered to the slit of the pattern 21 and the bottom of the deep layer. In the drying step, the IPA25 can quickly and completely replace the ultrapure water 24 hidden in the pattern 21 gaps and deeper bottom of the wafer 10, so as to avoid the collapse of the pattern 21 caused by the surface tension of the ultrapure water 24 during the subsequent wafer spin drying, and improve the cleaning and drying efficiency.
It should be noted that the cleaning method provided by the present invention is suitable for cleaning all semiconductor devices, and is of course particularly suitable for cleaning semiconductor devices with complex patterns, i.e. with relatively deep and relatively narrow gaps between the patterns.
In order to make the contents of the present invention more clearly understood, the contents of the present invention will be further described with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention is described in detail with reference to the drawings, and for convenience of explanation, the drawings are not enlarged partially according to the general scale, and should not be construed as limiting the present invention.
The device cleaning method provided by the invention comprises the following steps:
step S100, providing a wafer substrate, wherein a patterned film layer is formed on a first surface of the substrate;
step S200, cleaning the substrate by sequentially adopting cleaning liquid and displacement liquid, and rotating the substrate in a multi-stage variable speed mode in the process of replacing and discharging the cleaning liquid by the displacement liquid so as to displace the cleaning liquid in the depressed area of the patterned film layer, wherein the surface tension of the displacement liquid is smaller than that of the cleaning liquid.
Preferably, the multi-step variable speed manner includes repeatedly switching the rotation speed of the substrate between a first rotation speed and a second rotation speed during the cleaning process, and the second rotation speed is less than the first rotation speed, so that the replacement liquid penetrates into the recessed regions of the patterned film layer. Preferably, the step of sequentially washing the substrate with a washing liquid and a displacing liquid comprises: and carrying out liquid cleaning on the patterned film layer on the substrate by using the cleaning liquid containing an ultra-pure water component to remove particles or micro-dust on the substrate, and removing the etching liquid if the cleaning is carried out after wet etching. Then, the replacement liquid containing isopropanol is adopted to perform liquid replacement for adjusting the surface tension of the space in the depressed area of the patterned film layer, the replacement liquid replaces the cleaning liquid attached to the substrate, and the collapse of the substrate patterned film layer caused by overlarge surface tension of the cleaning liquid when the subsequent substrate is subjected to high-speed rotation drying is avoided. And finally, carrying out rotary drying on the substrate to finish the cleaning of the substrate.
Preferably, in the liquid replacement process, a heat-conducting liquid with a temperature higher than the normal temperature may be introduced onto the second surface of the substrate to stabilize the temperature of the substrate at a higher value higher than the normal temperature, and accelerate the replacement speed of the replacement liquid. The second surface and the first surface are respectively positioned at two opposite sides of the substrate.
Fig. 4a to 4d are schematic structural diagrams of steps of liquid cleaning according to an embodiment of the present invention, and fig. 5a to 5d are schematic structural diagrams of steps of liquid replacement according to an embodiment of the present invention. The following describes the cleaning method proposed in the present invention in detail by taking the cleaning after the substrate is wet etched to form the patterned film as an example, as shown in fig. 4a to 4d and 5a to 5 d.
In step S100, a wafer substrate 100 is provided, and a patterned film 110 is formed on a first surface M1 of the substrate 100. Please refer to fig. 4 a.
The substrate 100 may be single crystal silicon, polysilicon, amorphous silicon, silicon germanium compound, Silicon On Insulator (SOI), gallium arsenide, gallium nitride, or other materials known to those skilled in the art. Shallow trench isolation structures, doped regions, or other well-known semiconductor structures may also be formed in the substrate 100, which is not limited in the present invention.
A plurality of layers of films are formed on the first surface M1 of the substrate 100, the patterned film 110 is patterned by chemical etching, and the patterned film 110 includes a plurality of support frame structure layers, and the recess 112 of the patterned film 110 includes a plurality of capacitor mounting holes, so as to be suitable for a capacitor manufacturing process of a dynamic random access memory. Specifically, the film layer may be wet etched by using an etching solution 120, so as to form a patterned film layer 110 on the substrate 100, wherein a recessed region 112 is formed in the patterned film layer 110, and the etching solution 120 is filled in the recessed region 112.
In step S200, the substrate 100 is sequentially cleaned with a cleaning liquid 130 and a displacement liquid 140, and during the process of replacing and discharging the cleaning liquid 130 with the displacement liquid 140, the substrate 100 is rotated in a multi-step variable speed manner to displace the cleaning liquid 130 in the recessed region 112 of the patterned film layer 110 and the surface tension of the displacement liquid 140 is smaller than that of the cleaning liquid 130.
Preferably, the multi-step variable speed manner includes repeatedly switching the rotation speed of the substrate 100 between a first rotation speed and a second rotation speed during the cleaning process, wherein the second rotation speed is less than the first rotation speed, so that the displacement liquid 140 penetrates into the recessed region 112 of the patterned film layer 110.
Preferably, the step of sequentially cleaning the substrate 100 with the cleaning liquid 130 and the displacing liquid 140 comprises: performing a liquid cleaning of the patterned film layer 110 on the substrate 100 using the cleaning liquid 130 containing an ultra-pure water component; and, displacing the space in the recessed region 112 of the patterned film layer 110 with a liquid for adjusting surface tension using the displacing liquid 140 containing an isopropyl alcohol component; the substrate 100 is rotated during both the liquid cleaning and the liquid displacing, and more preferably, the rotation speed of the substrate 100 is repeatedly switched between the first rotation speed and the second rotation speed.
Specifically, the substrate 100 is first cleaned with the cleaning liquid 130 containing an ultra-pure water component to remove the etching liquid 120 and the particles or the fine dust, and then the substrate 100 is cleaned with the replacement liquid 140 containing an isopropyl alcohol component for a second time, and the replacement liquid 140 replaces the cleaning liquid 130 attached to the substrate 100, so as to avoid the subsequent collapse of the patterned film layer 110 during the high-speed spin drying of the substrate 100. In both the first cleaning and the second cleaning, the substrate 100 is rotated, and the rotation speed of the substrate 100 is repeatedly switched between the first rotation speed and the second rotation speed.
Referring to fig. 4a to 4d, in the cleaning process, the substrate 100 is rotated, the rotation speed of the substrate 100 is repeatedly switched between a first rotation speed and a second rotation speed, and the second rotation speed is less than the first rotation speed, so as to change the angular speed of the cleaning liquid 130 on the substrate 100, increase the force of the cleaning liquid 130 penetrating into the recessed area 112 of the patterned film layer 110, and thereby accelerate the cleaning rate of the cleaning liquid 130 on the recessed area 112 of the patterned film layer 110. The nozzle B is located at one side of the substrate 100 to spray the cleaning liquid 130, the cleaning liquid 130 flows to the other opposite side of the substrate 100, and the flow rate of the cleaning liquid 130 is 1275 ml/min to 1725 ml/min, preferably 1500 ml/min.
Specifically, in the initial stage, the substrate 100 starts to rotate from a stationary state and accelerates to the first rotation speed, and the acceleration is between 950 rpm/s21050 revolutions/second2Preferably, the acceleration is 100 rpm2. The first rotation speed is between 950 rpm and 1050 rpm, preferably the first rotation speed is 1000 rpm, i.e. the time it takes for the substrate 100 to rotate from rest to the first rotation speed is between 0.95s and 1.05s, preferably 1 s.
Then, the substrate 100 rotates at the first rotation speed, please refer to fig. 4a, the nozzle B sprays the cleaning liquid 130, during the rotation of the substrate 100, the cleaning liquid 130 mainly moves along the upper surface of the patterned film 110, a small amount of the cleaning liquid 130 moves along the concave area 112 of the patterned film 110 toward the bottom of the patterned film 110, and the etching liquid 120 in the concave area 112 simultaneously moves relative to the top of the concave area 112, please refer to the direction of the arrow in fig. 4 a. The substrate 100 is maintained at the first rotation speed for a time of 5s to 7s, preferably 6 s.
Then, the substrate 100 is transitioned from the first rotation speed to the second rotation speed, i.e., there is a deceleration process, and the deceleration process is decelerated at 950 rpm to 1050 rpm, i.e., is decelerated at a rate of 950 rpm to 1050 rpm per second. Preferably, the deceleration process decelerates at 1000 revolutions per second. The second rotation speed is 270 rpm/s to 330 rpm/s, and preferably, the second rotation speed is 300 rpm/s. Therefore, the time it takes for the substrate 100 to transition from the first rotational speed to the second rotational speed is between 0.65s and 0.75s, preferably 0.7 s.
Then, the substrate 100 rotates at the second rotation speed, please refer to fig. 4b, where the second rotation speed is less than the first rotation speed, the rotation speed of the substrate 100 decreases, the downward pressure applied to the cleaning liquid 130 increases, the main cleaning liquid 130 moves toward the bottom along the concave region 112 of the patterned film 110, a small amount of the cleaning liquid 130 moves along the upper surface of the patterned film 110, and the etching liquid 120 in the concave region 112 moves toward the bottom of the concave region 112 at the same time, please refer to the direction of the arrow in fig. 4b, which accelerates the efficiency of the cleaning liquid 130 cleaning the etching liquid 120 in the concave region 112 of the patterned film 110. The time for maintaining the second rotation speed of the substrate 100 is the same as the time for maintaining the first rotation speed, and is between 5s and 7s, preferably 6 s.
Then, the substrate 100 is transitioned from the second rotation speed to the first rotation speed, i.e., there is an acceleration process, which accelerates at 950 rpm/s to 1050 rpm/s, i.e., at an increased speed of 950 rpm to 1050 rpm per second. Preferably, the acceleration process is accelerated at a speed of 1000 rpm. Therefore, the time taken for the substrate 100 to transition from the second rotation speed to the first rotation speed is the same as the time taken for the substrate 100 to transition from the first rotation speed to the second rotation speed, and is between 0.65s and 0.75s, preferably 0.7 s.
Then, the substrate 100 is rotated at the first rotation speed, please refer to fig. 4c, during the rotation of the substrate 100, the cleaning liquid 130 mainly moves along the upper surface of the patterned film 110, a small amount of the cleaning liquid 130 moves along the concave region 112 of the patterned film 110 toward the bottom of the patterned film 110, and the etching liquid 120 in the concave region 112 simultaneously moves toward the top of the concave region 112, please refer to the direction of the arrow in fig. 4 c. The substrate 100 is maintained at the first rotation speed for a time of 5s to 7s, preferably 6 s.
Then, the substrate 100 is transited from the first rotation speed to the second rotation speed, which is the same as the above deceleration process, and then the substrate 100 rotates at the second rotation speed, as shown in fig. 4d, the second rotation speed is less than the first rotation speed, the rotation speed of the substrate 100 decreases, the downward pressure applied to the cleaning liquid 130 increases, the main cleaning liquid 130 moves to the bottom along the recessed region 112 of the patterned film 110, a small amount of the cleaning liquid 130 moves along the upper surface of the patterned film 110, and the etching liquid 120 in the recessed region 112 moves to the bottom of the recessed region 112 at the same time, please refer to the direction of the arrow in fig. 4d, which accelerates the efficiency of the cleaning liquid 130 cleaning the etching liquid 120 in the recessed region 112 of the patterned film 110. The time for maintaining the second rotation speed of the substrate 100 is 5s to 7s, preferably 6s, the same as the time for maintaining the first rotation speed.
Through the continuous repeated conversion between the first rotation speed and the second rotation speed, that is, the first rotation speed is reduced to the second rotation speed, the angular speed of the cleaning liquid 130 on the substrate 100 can be changed to increase the force of the cleaning liquid 130 penetrating into the recessed area 112 of the patterned film layer 110, so as to accelerate the cleaning rate of the cleaning liquid 130 to the etching liquid and the particles or the micro-dust in the recessed area 112 of the patterned film layer 110, thereby saving the cleaning time, improving the cleaning efficiency, reducing the usage amount of the cleaning liquid 130, and reducing the treatment cost of the waste water (the solution after the cleaning is completed), thereby reducing the pollution to the environment.
The number of times of the interconversion between the first rotation speed and the second rotation speed may be determined by the actual conditions of the shape, structure, size, etc. of the patterned film 110, until the etching solution 120 in the recess 112 of the patterned film 110 is completely replaced by the cleaning solution 130. For example, completing 2 cycles (re-transition from the first rotational speed to the first rotational speed) completes the replacement of the cleaning liquid 130.
In the above description, in the present embodiment, the time for each time the substrate maintains the first rotation speed is the same (both between 5s and 7s), the time for each time the substrate maintains the second rotation speed is the same (both between 5s and 7s), the time for each deceleration process of descending from the first rotation speed to the second rotation speed is the same (both between 0.65s and 0.75s), and the time for each time the substrate ascends from the second rotation speed to the first rotation speed is the same (both between 0.65s and 0.75 s). In other embodiments, the time for repeating the same steps may be different, for example, the time for maintaining the first rotational speed for the first time and the time for maintaining the first rotational speed for the second time may be different, and the time for maintaining the first rotational speed for each time may be incremented or decremented, or may be varied in some way. The time for each deceleration from the first rotational speed to the second rotational speed, or each acceleration from the second rotational speed to the first rotational speed, is also different.
It should be noted that, in this embodiment, the first rotation speed and the second rotation speed are repeatedly switched, that is, two different rotation speeds are switched, and in other embodiments, three or more speeds are repeatedly switched, and the three or more speeds need to be gradually decreased, so as to change the angular speed of the cleaning liquid 130 on the substrate 100, and increase the force of the cleaning liquid 130 penetrating into the recessed area 112 of the patterned film layer 110, thereby increasing the cleaning rate of the cleaning liquid 130 on the recessed area 112 of the patterned film layer 110.
Referring to fig. 5a to 5d, the substrate 100 is cleaned with the replacement liquid 140 for the second time. In the cleaning process, the substrate 100 is rotated, the rotation speed of the substrate 100 is repeatedly switched between a first rotation speed and a second rotation speed, and the second rotation speed is less than the first rotation speed, so as to change the angular speed of the displacement liquid 140 on the substrate 100, and increase the force of the displacement liquid 140 penetrating into the recessed area 112 of the patterned film layer 110, thereby increasing the cleaning rate of the displacement liquid 140 on the recessed area 112 of the patterned film layer 110. Nozzle C is located on one side of substrate 100 and ejects displacement liquid 140, displacement liquid 140 flows to the opposite side of substrate 100, and displacement liquid 140 has a flow rate of 210 ml/min to 390 ml/min, preferably 300 ml/min.
Specifically, similar to the first cleaning described above. In the beginning stage, the substrate 100 starts to rotate from a standstill and accelerates to the first rotation speed, the acceleration being between 950 rpm21050 revolutions/second2Preferably, the acceleration is 100 rpm2. The first rotation speed is between 950 rpm and 1050 rpm, preferably the first rotation speed is 1000 rpm, i.e. the time it takes for the substrate 100 to rotate from rest to the first rotation speed is between 0.95s and 1.05s, preferably 1 s.
Then, the substrate 100 is rotated at the first rotation speed, as shown in fig. 5a, the nozzle C ejects a replacement liquid 140 for replacing the cleaning liquid 130 attached to the substrate 100, during the rotation of the substrate 100, the replacement liquid 140 mainly moves along the upper surface of the patterned film 110, a small amount of the replacement liquid 140 moves along the recessed area 112 of the pattern 110 toward the bottom of the patterned film 110, and the cleaning liquid 1300 in the recessed area 112 simultaneously moves toward the top of the recessed area 112, as shown in the direction of the arrow in fig. 5 a. The substrate 100 is maintained at the first rotation speed for a time of 5s to 7s, preferably 6 s.
Then, the substrate 100 is transitioned from the first rotation speed to the second rotation speed, i.e., there is a deceleration process, and the deceleration process is decelerated at 950 rpm to 1050 rpm, i.e., is decelerated at a rate of 950 rpm to 1050 rpm per second. Preferably, the deceleration process decelerates at 1000 revolutions per second. The second rotation speed is 270 rpm/s to 330 rpm/s, and preferably, the second rotation speed is 300 rpm/s. Therefore, the time it takes for the substrate 100 to transition from the first rotational speed to the second rotational speed is between 0.65s and 0.75s, preferably 0.7 s.
Then, the substrate 100 is rotated at the second rotation speed, as shown in fig. 5b, the second rotation speed is less than the first rotation speed, the rotation speed of the substrate 100 is decreased, the downward pressure applied to the displacement liquid 140 is increased, the main displacement liquid 140 moves along the recessed area 112 of the patterned film 110 toward the bottom, a small amount of the displacement liquid 140 moves along the upper surface of the patterned film 110, and the cleaning liquid 130 in the gap moves toward the bottom of the recessed area 112 at the same time, as shown in fig. 5b, which accelerates the efficiency of the displacement liquid 140 cleaning the cleaning liquid 130 in the recessed area 112 of the pattern 110. The time for maintaining the second rotation speed of the substrate 100 is the same as the time for maintaining the first rotation speed, and is between 5s and 7s, preferably 6 s.
Then, the substrate 100 is transitioned from the second rotation speed to the first rotation speed, i.e., there is an acceleration process, which accelerates at 950 rpm/s to 1050 rpm/s, i.e., at an increased speed of 950 rpm to 1050 rpm per second. Preferably, the acceleration process is accelerated at a speed of 1000 rpm. Therefore, the time taken for the substrate 100 to transition from the second rotation speed to the first rotation speed is the same as the time taken for the substrate 100 to transition from the first rotation speed to the second rotation speed, and is between 0.65s and 0.75s, preferably 0.7 s.
Then, the substrate 100 is rotated at the first rotation speed, as shown in fig. 5c, during the rotation of the substrate 100, the displacement liquid 140 mainly moves along the upper surface of the patterned film 110, a small amount of the displacement liquid 140 moves along the concave area 112 of the pattern 110 toward the bottom of the patterned film 110, and the cleaning liquid 130 in the concave area 112 simultaneously moves toward the top of the concave area 112, as shown in the direction of the arrow in fig. 5 c. The substrate 100 is maintained at the first rotation speed for a time of 5s to 7s, preferably 6 s.
The substrate 100 is then transitioned from the first rotational speed to the second rotational speed, as in the deceleration process described above, the substrate 100 is then rotated at the second rotation speed, as shown in fig. 5d, which is less than the first rotation speed, the rotation speed of the substrate 100 is decreased, the downward pressure applied to the displacement liquid 140 is increased, the main displacement liquid 140 moves along the concave region 112 of the patterned film 110 toward the bottom, the small displacement liquid 140 moves along the upper surface of the patterned film 110, the cleaning liquid 130 in the recessed area 112 will move towards the bottom of the recessed area 112 at the same time, please refer to the direction of the arrow in fig. 4d, this process accelerates the efficiency of the displacement liquid 140 displacing and displacing the cleaning liquid 130 in the recessed regions 112 of the patterned film 110. The time for maintaining the second rotation speed of the substrate 100 is 5s to 7s, preferably 6s, the same as the time for maintaining the first rotation speed.
Through the continuous repeated conversion of the first rotation speed and the second rotation speed, that is, the first rotation speed is reduced to the second rotation speed, the acceleration of the replacement liquid 140 on the substrate 100 can be changed to increase the force of the replacement liquid 140 penetrating into the recessed area 112 of the patterned film layer 110, so as to accelerate the cleaning rate of the replacement liquid 140 to the cleaning liquid 130 in the recessed area 112 of the patterned film layer 110, thereby saving the cleaning time, improving the cleaning efficiency, and reducing the usage amount of the replacement liquid 140, and simultaneously reducing the treatment cost of waste water (solution after cleaning), thereby reducing the pollution to the environment.
The number of times of the interconversion between the first rotation speed and the second rotation speed may be determined by the actual conditions of the shape, structure, size, etc. of the patterned film 110 until the cleaning liquid 130 at the bottom of the gap of the patterned film 110 is completely replaced by the replacement liquid 140. For example, completing 3 cycles (re-switching from the first rotational speed to the first rotational speed) completes the replacement of the replacement liquid 140. Thereby preventing the substrate patterned film 110 from collapsing due to the excessive surface tension of the cleaning liquid 130 when the subsequent substrate is subjected to high-speed spin drying.
In the above description, in the present embodiment, the time for each time the substrate maintains the first rotation speed is the same (both between 5s and 7s), the time for each time the substrate maintains the second rotation speed is the same (both between 5s and 7s), the time for each deceleration process of descending from the first rotation speed to the second rotation speed is the same (both between 0.65s and 0.75s), and the time for each time the substrate ascends from the second rotation speed to the first rotation speed is the same (both between 0.65s and 0.75 s). In other embodiments, the time for repeating the same steps may be different, for example, the time for maintaining the first rotational speed for the first time and the time for maintaining the first rotational speed for the second time may be different, and the time for maintaining the first rotational speed for each time may be incremented or decremented, or may be varied in some way. The time for each deceleration from the first rotational speed to the second rotational speed, or each acceleration from the second rotational speed to the first rotational speed, is also different.
It should be noted that, in this embodiment, the first rotation speed and the second rotation speed are repeatedly switched, and in other embodiments, three or more speeds may be repeatedly switched, and the three or more speeds need to be gradually decreased, so as to change the angular speed of the replacement liquid 140 on the substrate 100 and increase the force of the replacement liquid 140 penetrating into the recessed area 112 of the patterned film layer 110, thereby increasing the cleaning rate of the cleaning liquid 130 in the recessed area 112 of the patterned film layer 110 by the replacement liquid 140.
It should be noted that, in this embodiment, the first rotation speed and the second rotation speed used in the second cleaning and the first cleaning are the same, and in other embodiments, two rotation speeds in the second cleaning and two rotation speeds in the first cleaning may be different.
In the second cleaning, a heat conductive liquid 150 with a temperature higher than normal temperature may be further introduced to the second surface M2 of the substrate 100 (located on the opposite sides of the substrate 100 from the first surface M1), i.e., the bottom of the substrate 100, as shown in fig. 5a to 5d, so as to stabilize the temperature of the substrate 100 at a higher value higher than normal temperature, and increase the speed of the replacement liquid 140 replacing the cleaning liquid 130. The nozzle C sprays the heat conductive liquid 150 higher than the normal temperature to the bottom of the substrate 100. The heat conductive liquid 150 contains an ultrapure water component, and the temperature thereof is 70 to 80 ℃, preferably, the temperature of the heat conductive liquid 150 is 75 ℃. The flow rate of the thermally conductive liquid 150 is 360 ml/min to 440 ml/min, preferably 400 ml/min.
After the second cleaning of the substrate 100, the cleaning method further includes: the substrate 100 is spin dried. Since the cleaning liquid 130 on the substrate 100 has been completely removed, collapse of the patterned film layer 110 may be prevented.
It is understood that 4 nozzles are described in the above-described embodiment, nozzle a for ejecting the etching liquid toward the substrate, nozzle B for ejecting ultrapure water (or a cleaning liquid containing ultrapure water) toward the substrate, nozzle C for ejecting IPA (or a substitution liquid containing isopropyl alcohol) toward the substrate, and nozzle D for ejecting ultrapure water (or a heat-conductive liquid containing ultrapure water) toward the bottom of the substrate. In this embodiment, the sources of different liquids are illustrated only by different nozzles, and in other embodiments, different liquids may be introduced in other manners, which is not limited in the present invention.
Finally, the device cleaning method further comprises: the substrate 100 is spin-dried, and the displacement liquid 140 remaining in the patterned film layer 110 in the substrate 100 is removed.
FIGS. 6 a-6 c are graphs showing the comparison of particle removal rate, pattern collapse rate, and displacement time of the displacing liquid. As shown in fig. 6a, which is a comparison graph of particle removal rate, the abscissa represents particles of different sizes (e.g. 40nm, 70nm, 90nm or 1 μm), and the ordinate represents particle removal rate, wherein the left graph represents a common cleaning method, i.e. cleaning according to the prior art, and the right graph represents the cleaning method according to the present invention, corresponding to each group of graphs, it can be seen that the particle removal rate can be improved by the cleaning method according to the present invention, wherein the removal rate for 70nm particles is improved by 10.2%.
As shown in fig. 6b, which is a schematic diagram comparing collapse rates of patterns, in the abscissa, a common cleaning method is represented in general, i.e., cleaning is performed by using the prior art, the present invention represents the cleaning method according to the present invention, and in the ordinate, the collapse rate of patterns is represented in general, wherein, corresponding to each group of patterns, the left pattern represents the Center (Center) of the substrate, i.e., the most central position of the substrate, the middle pattern represents the middle (Mid) of the substrate, i.e., any middle position relative to the edge of the substrate, and the right pattern represents the edge of the substrate.
As shown in fig. 6c, which is a schematic diagram comparing the displacement time of the displacement liquid, the abscissa represents the general displacement method, i.e. the displacement is performed by the prior art, the present invention represents the displacement method according to the present invention, and the ordinate represents the displacement process time of the displacement liquid, it can be seen from the figure that the IPA displacement by the prior art requires 1800s to complete the cleaning process, whereas the displacement of the displacement liquid by the cleaning method according to the present invention requires only 180s to complete the cleaning process.
In summary, in the device cleaning method provided by the present invention, the substrate is sequentially cleaned by using a cleaning liquid and a displacement liquid, and during the process of replacing and discharging the cleaning liquid by using the displacement liquid, the substrate is rotated in a multi-stage variable speed manner to displace the cleaning liquid in the recessed region of the patterned film layer, and the surface tension of the displacement liquid is smaller than that of the cleaning liquid, so as to increase the force of the displacement liquid penetrating into the recessed region at the bottom of the patterned film layer, thereby increasing the speed of replacing and discharging the cleaning liquid by using the displacement liquid, improving the cleaning capability and drying efficiency, and reducing the whole cleaning time to achieve the purposes of improving the machine performance, reducing the usage amount of the liquid, reducing the wastewater treatment cost, and reducing the environmental pollution.
Furthermore, the replacement liquid can completely replace and discharge the cleaning liquid in the depressed area of the patterned film layer, so that the patterned film layer is prevented from collapsing due to the surface tension of the cleaning liquid containing ultrapure water during the rotary drying of the subsequent substrate.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (13)
1. A device cleaning method, comprising:
providing a wafer substrate, wherein a patterned film layer is formed on a first surface of the substrate; and the number of the first and second groups,
and sequentially cleaning the substrate by using a cleaning liquid and a displacement liquid, wherein the surface tension of the displacement liquid is less than that of the cleaning liquid, and in the process of replacing and discharging the cleaning liquid by using the displacement liquid, the substrate is rotated in a multi-stage variable speed mode, so that the rotation speed of the substrate is repeatedly switched between a first rotation speed and a second rotation speed to displace the cleaning liquid in the recessed area of the patterned film layer.
2. The device cleaning method according to claim 1, wherein the second rotation speed is lower than the first rotation speed during the process of displacing and discharging the cleaning liquid with the substitution liquid, so that the substitution liquid penetrates into the concave regions of the patterned film layer.
3. The device cleaning method according to claim 2, wherein the step of cleaning the substrate with the cleaning liquid and the substitution liquid in sequence comprises:
performing a liquid cleaning of the patterned film layer on the substrate with the cleaning liquid comprising an ultra-pure water component; and the number of the first and second groups,
performing liquid displacement for reducing surface tension of the space in the concave region of the patterned film layer by using the displacement liquid containing isopropanol component;
rotating the substrate during both the liquid cleaning and the liquid displacing, the rotational speed of the substrate being repeatedly switched between the first rotational speed and the second rotational speed.
4. The device cleaning method according to claim 1, wherein a heat conductive liquid having a temperature higher than normal temperature is introduced to the second surface of the substrate during the process of replacing and discharging the cleaning liquid with the substitution liquid to stabilize the temperature of the substrate at a temperature higher than normal temperature, the first surface and the second surface being respectively located at two opposite sides of the substrate.
5. The device cleaning method according to claim 4, wherein the heat conductive liquid contains an ultrapure water component having a temperature of 70 ℃ to 80 ℃.
6. The device cleaning method of claim 2, wherein the first rotation speed is 950 to 1050 rpm and the second rotation speed is 270 to 330 rpm.
7. The device cleaning method according to claim 6, wherein the process from the first rotation speed to the second rotation speed has a deceleration process, and the deceleration process is decelerated at 950 rpm to 1050 rpm; the process from the second rotating speed to the first rotating speed has an acceleration process, and the acceleration process is accelerated at a speed of 950-1050 revolutions/second.
8. The device cleaning method according to claim 7, wherein the time for maintaining the first rotation speed of the substrate is 5s to 7s, the time for maintaining the second rotation speed of the substrate is 5s to 7s, and the time for the deceleration process and the acceleration process is 0.65s to 0.75 s.
9. The device cleaning method of claim 3, wherein the substrate is rotated from a stationary state and accelerated to the first rotation speed at an acceleration of 950 rpm in both the liquid cleaning and the liquid replacement start phases21050 revolutions/second2。
10. The device cleaning method according to claim 3, wherein in the liquid cleaning, the flow rate of the cleaning liquid is 1275 ml/min to 1725 ml/min; in the liquid displacement, the flow rate of the displacement liquid is between 210 ml/min and 390 ml/min.
11. The device cleaning method according to claim 4, wherein a flow rate of the thermally conductive liquid is 360 ml/min to 440 ml/min in the process of displacing and discharging the cleaning liquid with the substitution liquid.
12. The device cleaning method according to claim 1, wherein after the process of displacing and discharging the cleaning liquid by the displacing liquid, the device cleaning method further comprises: and carrying out rotary drying on the substrate, and removing the replacement liquid remained in the patterned film layer in the substrate.
13. The device cleaning method of any of claims 1 to 12, wherein the step of providing the wafer substrate comprises: and forming a pattern of the patterned film layer in a chemical etching mode, wherein the patterned film layer comprises a plurality of support frame structure layers, and the recessed region of the patterned film layer comprises a plurality of capacitor mounting holes so as to be suitable for a capacitor manufacturing process of a dynamic random access memory chip.
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| CN101869895A (en) * | 2009-04-23 | 2010-10-27 | 上海华虹Nec电子有限公司 | Wafer clean method by wet method |
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