CN101869895A - Wafer clean method by wet method - Google Patents
Wafer clean method by wet method Download PDFInfo
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- CN101869895A CN101869895A CN200910057110A CN200910057110A CN101869895A CN 101869895 A CN101869895 A CN 101869895A CN 200910057110 A CN200910057110 A CN 200910057110A CN 200910057110 A CN200910057110 A CN 200910057110A CN 101869895 A CN101869895 A CN 101869895A
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Abstract
The invention discloses a wafer clean method by a wet method, comprising the following steps: (1) a wafer is delivered into a clean trough; (2) a cabin door is closed; (3) hot nitrogen is introduced; the wafer is driven by an electric motor to start rotation until the temperature of the wafer achieves the designated temperature; (4) liquid medicine is delivered to the clean trough for cleaning through a nozzle; and the wafer is kept to rotate; (5) deionized water is sprayed into the liquid medicine by the nozzle after being cleaned to replace used liquid medicine; and the wafer is kept to rotate; (6) the hot nitrogen is introduced after the residual liquid medicine is replaced, and simultaneously the wafer is driven by the electric motor to accelerate rotation for drying; (7) the wafer is delivered out after drying. The method not only can improve utilization rate of the liquid medicine, reduce waste, but also can shorten process time, improve wet clean efficiency and realize energy conservation and emission reduction.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing process, relate in particular to a kind of wafer clean method by wet method.
Background technology
As shown in Figure 1, present semiconductor applications splashing type wet clean equipment commonly used, rinse bath 6 is fixed by pedestal 3, and can be rotated under the drive of motor 4, and its working method is as follows basically:
(1) wafer 1 is sent into rinse bath 6;
(2) hatch door is closed;
(3) soup of uniform temperature (40～80 degrees centigrade) enters rinse bath 6 by nozzle 2 and cleans, and wafer 1 begins rotation under the drive of motor 4 simultaneously;
(4) the soup scavenging period is finished rear nozzle 2 and is sprayed into deionized water to displace the soup that has used, and wafer 1 keeps rotation;
(5) feed hot nitrogen (40～80 degrees centigrade) by pore 5 after the residual liquor displacement is finished, motor 4 drive wafers 1 acceleration rotation simultaneously dries;
(6) drying is finished, and wafer 1 is sent.
Need to be operated under the existing a lot of situations of wet clean process under the specified temp to guarantee the best balance of cleaning effect and minimal damage.Because under the setting of existing process conditions, the stability of temperature can't guarantee that cleaning efficiency is lower, can't reach cleaning performance effectively at temperature recovery before designated value, has caused the waste of more soup and the waste of process time.Existing process setting is comparatively simple, but has a problem, and exactly when technology has just begun to carry out, because the temperature of wafer has only environment temperature (about about 23 degrees centigrade), and rinse bath is if more work, and temperature is also lower.The operating temperature difference of both and soup is bigger, will inevitably bring heat exchange, cause the temperature of soup lower, through actual measurement, can descend about 20 degrees centigrade at the observed temperature of popping one's head under 60～80 degrees centigrade the design temperature, technological temperature just can reach designated value after about 3～5 minutes.Because during this period of time, operating temperature is lower, and the cleansing power of soup can't be brought into play fully, is exactly ineffective time under the opposite extreme situations.Therefore both waste soup, expended the time and the energy again.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of wafer clean method by wet method, and this method both can improve the utilization rate of soup, cut the waste, and can also shorten the process time, improves wet-cleaning efficient, realizes energy-saving and emission-reduction.
In order to solve the problems of the technologies described above, the present invention is achieved through the following technical solutions:
A kind of wafer clean method by wet method comprises the steps:
(1) wafer is sent into rinse bath;
(2) hatch door is closed;
(3) feed hot nitrogen, the driven by motor wafer begins rotation simultaneously, reaches assigned temperature up to the temperature of wafer;
(4) soup enters rinse bath by nozzle and cleans wafer maintenance rotation;
(5) the soup cleaning is finished rear nozzle and is sprayed into deionized water to displace the soup that has used, and wafer keeps rotation;
(6) feed hot nitrogen after the residual liquor displacement is finished, the driven by motor wafer quickens to rotate and dries simultaneously;
(7) drying is finished, and wafer is sent.
The temperature that feeds hot nitrogen in the step (3) is set at the assigned temperature of arts demand, and this assigned temperature is 40～80 degrees centigrade.
Assigned temperature described in the step (3) is 40～80 degrees centigrade.
The temperature of step (4) herb liquid is 40～80 degrees centigrade.
The temperature that feeds hot nitrogen in the step (6) is set at the assigned temperature of arts demand, and this assigned temperature is 40～80 degrees centigrade.
Rotating speed of motor is identical with the middle rotating speed of motor of step (4) in the step (3).
Beneficial effect of the present invention is: after the application of the invention method, because wafer and rinse bath are through preheating, soup and the colder wafer and the heat exchange between the rinse bath of heat have been avoided, avoid the reduction of fluid temperature, guaranteed that technological temperature is stabilized in designated value, reduced the additional waste of being brought because of the reduction of soup cleaning efficiency, improved the utilization rate of soup, can also shorten the process time, improve wet-cleaning efficient, realize energy-saving and emission-reduction.Especially at some less technology of own scavenging period, both guaranteed to clean fully, reduced the damage that causes because of cleaning again.
Description of drawings
Fig. 1 is that existing splashing type cleaning equipment carries out the schematic diagram that the wet method wafer cleans;
Fig. 2 is the effect schematic diagram that adopts wafer clean method by wet method of the present invention (logical in advance nitrogen);
Fig. 3 is the effect schematic diagram that adopts existing wafer clean method by wet method (not having pre-logical nitrogen).
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
If change existing technology setting, before beginning to clean, at first the temperature of wafer is raised to or near designated value, the temperature of wafer, rinse bath and soup is consistent has so just avoided heat exchange, make fluid temperature remain on the optimal clean temperature, realized optimum utilization to soup, shorten the process time, improved efficient.Based on the function that the splashing type cleaning equipment itself has, can not need extra transformation to achieve the above object, the hot nitrogen that is about to be used to dry before spraying liquid, at first feed a period of time simultaneously motor begin rotation.Because nitrogen temperature is higher, be about 40 to 80 degrees centigrade, so just can be raised to assigned temperature to the temperature of rinse bath and wafer within a short period of time, because motor is started working, the wafer rotation has further improved the efficient and the uniformity that heat up.Close nitrogen then, feed and clean soup, begin normal cleaning.Wafer clean method by wet method of the present invention adopts conventional splashing type wet clean equipment, and as shown in Figure 1, the concrete steps of this method are as follows:
(1) wafer 1 is sent into rinse bath 6;
(2) hatch door is closed;
(3) feed hot nitrogen by pore 5 and (be set at the assigned temperature of arts demand, this assigned temperature is 40～80 degrees centigrade), motor 4 drive wafers 1 begin rotation simultaneously, and rotating speed is 500rpm-1500rpm, up to reaching assigned temperature (this assigned temperature is at 40～80 degrees centigrade);
(4) soup of uniform temperature (40～80 degrees centigrade) enters rinse bath 6 by nozzle 2 and cleans, and wafer 1 keeps rotation, and the rotating speed of motor 4 was provided with consistent with the rotating speed of the middle motor 4 of step (3) when this step began spraying liquid;
(5) the soup scavenging period is finished rear nozzle and is sprayed into deionized water to displace the soup that has used, and wafer 1 keeps rotation; The rotating speed of this step motor 4 remains on previous step motor speed ± 50%.
(6) feed hot nitrogen (40～80 degrees centigrade) by pore 5 after the residual liquor displacement is finished, motor 4 drive wafers 1 acceleration rotation simultaneously dries, and rotating speed is 1000rpm-3000rpm;
(7) drying is finished, and wafer 1 is sent.
See also Fig. 2 and Fig. 3, two figure all are that each point is represented the particle of an adhesion to the distribution map of crystal column surface adhered particles after cleaning.Fig. 2 is the particle situation that feeds nitrogen before cleaning in advance, and Fig. 3 is the particle situation that does not feed nitrogen before cleaning in advance.Can see very intuitively that from relatively going up of two figure under the situation that feeds nitrogen in advance, total number of particles is 39, and does not feed in advance under the situation of nitrogen, total number of particles is 61.Feed the granule number that adheres to behind the nitrogen in advance and reduced 36%, obviously cleaning performance is better.
Claims (8)
1. a wafer clean method by wet method is characterized in that, comprises the steps:
(1) wafer is sent into rinse bath;
(2) hatch door is closed;
(3) feed hot nitrogen, the driven by motor wafer begins rotation simultaneously, reaches assigned temperature up to the temperature of wafer;
(4) soup enters rinse bath by nozzle and cleans wafer maintenance rotation;
(5) the soup cleaning is finished rear nozzle and is sprayed into deionized water to displace the soup that has used, and wafer keeps rotation;
(6) feed hot nitrogen after the residual liquor displacement is finished, the driven by motor wafer quickens to rotate and dries simultaneously;
(7) drying is finished, and wafer is sent.
2. wafer clean method by wet method as claimed in claim 1 is characterized in that, the temperature that feeds hot nitrogen in the step (3) is set at the assigned temperature of arts demand, and this assigned temperature is 40～80 degrees centigrade.
3. wafer clean method by wet method as claimed in claim 1 is characterized in that, the assigned temperature described in the step (3) is 40～80 degrees centigrade.
4. wafer clean method by wet method as claimed in claim 1 is characterized in that, the temperature of step (4) herb liquid is 40～80 degrees centigrade.
5. wafer clean method by wet method as claimed in claim 1 is characterized in that: the temperature that feeds hot nitrogen in the step (6) is set at the assigned temperature of arts demand, and this assigned temperature is 40～80 degrees centigrade.
6. wafer clean method by wet method as claimed in claim 1 is characterized in that, rotating speed of motor is identical with the middle rotating speed of motor of step (4) in the step (3), and rotating speed is 500rpm-1500rpm.
7. as claim 1 or 6 described wafer clean method by wet method, it is characterized in that, in the step (5) rotating speed of motor remain on the motor speed of step (4) ± 50%.
8. wafer clean method by wet method as claimed in claim 1 is characterized in that, the rotating speed that motor quickens to rotate in the step (6) is 1000rpm-3000rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057110A CN101869895A (en) | 2009-04-23 | 2009-04-23 | Wafer clean method by wet method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057110A CN101869895A (en) | 2009-04-23 | 2009-04-23 | Wafer clean method by wet method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101869895A true CN101869895A (en) | 2010-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910057110A Pending CN101869895A (en) | 2009-04-23 | 2009-04-23 | Wafer clean method by wet method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024585A (en) * | 2016-05-27 | 2016-10-12 | 嘉兴晶装电子设备有限公司 | Rotary type washing and drying apparatus |
| CN109786209A (en) * | 2017-11-15 | 2019-05-21 | 长鑫存储技术有限公司 | Device cleaning method |
-
2009
- 2009-04-23 CN CN200910057110A patent/CN101869895A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024585A (en) * | 2016-05-27 | 2016-10-12 | 嘉兴晶装电子设备有限公司 | Rotary type washing and drying apparatus |
| CN109786209A (en) * | 2017-11-15 | 2019-05-21 | 长鑫存储技术有限公司 | Device cleaning method |
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Application publication date: 20101027 |