CN109781288B - Temperature sensor for detecting temperature field distribution of laser spots and preparation method thereof - Google Patents
Temperature sensor for detecting temperature field distribution of laser spots and preparation method thereof Download PDFInfo
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- CN109781288B CN109781288B CN201910161572.0A CN201910161572A CN109781288B CN 109781288 B CN109781288 B CN 109781288B CN 201910161572 A CN201910161572 A CN 201910161572A CN 109781288 B CN109781288 B CN 109781288B
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Abstract
The invention discloses a temperature sensor for detecting the distribution of a laser spot temperature field and a preparation method thereof, wherein the temperature sensor comprises an insulating high-temperature layer substrate, the surface of the insulating high-temperature layer substrate is divided into a sensitive area and a non-sensitive area, and the sensitive area is provided with an anode thermocouple film array and a cathode thermocouple film array which are sequentially distributed from bottom to top, wherein one anode thermocouple film in the anode thermocouple film array corresponds to one cathode thermocouple film in the cathode thermocouple film array, each cathode thermocouple film covers the corresponding anode thermocouple film, and the upper surface of the anode thermocouple film and the area of the sensitive area which is not covered with the anode thermocouple film array are covered with protective layers; each negative thermocouple film and each positive thermocouple film are connected with a cold end, wherein each cold end is located in a non-sensitive area, and the temperature sensor has the characteristics of multiple temperature measuring points and small volume.
Description
Technical Field
The invention belongs to the field of laser spot temperature measurement, and relates to a temperature sensor for detecting the distribution of a laser spot temperature field and a preparation method thereof.
Background
Laser has been widely used in the fields of communications, military, medical industry, etc. due to its good monochromaticity, strong directivity, high brightness, etc. In industrial production, the temperature of a laser spot must be controlled during laser cutting, laser rapid prototyping, laser cutting and laser surgery by utilizing the high energy density of laser. Therefore, the temperature distribution detection of the laser spot is very important, and the traditional temperature sensor has large volume and few temperature measuring points, so that the purpose of detecting the temperature distribution of the laser spot is difficult to realize. Therefore, it is necessary to develop a small-sized temperature sensor with multiple temperature measurement points for detecting the temperature distribution of the laser spot.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a temperature sensor for detecting the temperature field distribution of laser spots and a preparation method thereof.
In order to achieve the above purpose, the temperature sensor for detecting the distribution of the laser spot temperature field comprises an insulating high-temperature layer substrate, wherein the surface of the insulating high-temperature layer substrate is divided into a sensitive area and a non-sensitive area, and the sensitive area is provided with an anode thermocouple film array and a cathode thermocouple film array which are sequentially distributed from bottom to top, wherein one anode thermocouple film in the anode thermocouple film array corresponds to one cathode thermocouple film in the cathode thermocouple film array, each cathode thermocouple film covers the corresponding anode thermocouple film, and the upper surface of the anode thermocouple film and the area of the sensitive area which is not covered by the anode thermocouple film array are covered by protective layers;
each negative thermocouple film and each positive thermocouple film are connected with a cold end, wherein each cold end is positioned in a non-sensitive area.
The insulating high-temperature layer substrate is made of a silicon carbide ceramic material.
The positive thermocouple thin film array is made of n-type strontium lanthanum chromate, and the negative thermocouple thin film array is made of p-type indium oxide.
And the positive thermocouple film and the negative thermocouple film on the positive thermocouple film form a heat node, and all the heat nodes are distributed in a cross shape.
The number of the thermal nodes is 25, wherein one thermal node is positioned at the central position, the rest 24 thermal nodes are averagely divided into six groups, and the distance between every two adjacent groups of thermal nodes is 100 mu m.
The width of each positive thermocouple film and each negative thermocouple film is 50 μm.
The sensitive area is a circular structure with the diameter of 2 mm.
The preparation method of the temperature sensor for detecting the distribution of the laser spot temperature field comprises the following steps:
1) forming an anode pattern of the thin film thermocouple by utilizing a photoetching process, and selecting a sensitive area and a non-sensitive area on the surface of the insulating high-temperature layer substrate;
2) manufacturing a positive thermocouple thin film array on the sensitive area by adopting a magnetron sputtering method;
3) forming a negative electrode pattern of the film thermocouple by utilizing a photoetching process;
4) manufacturing a negative thermocouple film array by adopting a magnetron sputtering method;
5) forming a pattern of the protective layer by utilizing a photoetching process;
6) manufacturing a protective layer by adopting a magnetron sputtering method to obtain a temperature sensor sample;
7) and calibrating the temperature sensor sample to obtain the temperature sensor for detecting the distribution of the laser spot temperature field.
Annealing the product obtained in the step 4) at 1000 ℃ for 1h between the step 4) and the step 5) to crystallize each positive thermocouple film in the positive thermocouple film array and each negative thermocouple film in the negative thermocouple film array.
The invention has the following beneficial effects:
the invention relates to a temperature sensor for detecting the distribution of laser facula temperature fields and a preparation method thereof, wherein, during the specific operation, the substrate surface of an insulating high-temperature layer is divided into a sensitive area and a non-sensitive area, and an anode thermocouple film array and a cathode thermocouple film array are arranged on the sensitive area and are distributed from bottom to top in sequence, wherein, one anode thermocouple film in the anode thermocouple film array corresponds to one cathode thermocouple film in the cathode thermocouple film array, and each cathode thermocouple film covers the corresponding anode thermocouple film, each anode thermocouple film and the cathode thermocouple film positioned on the anode thermocouple film form a plurality of thermal nodes, so that a single temperature sensor has the characteristics of a plurality of temperature measuring points and has smaller volume, in addition, the invention is based on the thermocouple principle, does not need external energy supply and does not need a bridge type processing circuit, therefore, the measuring system is simple and convenient.
Furthermore, the substrate of the insulating high-temperature layer is made of a silicon carbide ceramic material, so that the requirement of high energy density of laser is met.
Furthermore, the positive thermocouple thin film array is made of n-type strontium lanthanum chromate, the negative thermocouple thin film array is made of p-type indium oxide, and the n-type strontium lanthanum chromate and the p-type indium oxide have opposite seebeck coefficients, so that an enhanced signal can be output.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic structural view of the sensitive region 5 of the present invention.
Wherein, 1 is an insulating high-temperature layer substrate, 2 is an anode thermocouple film array, 3 is a cathode thermocouple film array, 4 is a heat node, 5 is a sensitive area, 6 is a protective layer, and 7 is a cold end.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1 and 2, the temperature sensor for detecting the distribution of the laser spot temperature field according to the present invention includes an insulating high temperature layer substrate 1, the surface of the insulating high temperature layer substrate 1 is divided into a sensitive area 5 and a non-sensitive area, the sensitive area 5 is provided with an anode thermocouple thin film array 2 and a cathode thermocouple thin film array 3 which are sequentially distributed from bottom to top, wherein one anode thermocouple thin film in the anode thermocouple thin film array 2 corresponds to one cathode thermocouple thin film in the cathode thermocouple thin film array 3, each cathode thermocouple thin film covers the corresponding anode thermocouple thin film, and the upper surface of the anode thermocouple thin film and the area of the sensitive area 5 which is not covered with the anode thermocouple thin film array 2 are covered with a protective layer 6; each negative thermocouple film and each positive thermocouple film are connected with a cold end 7, wherein each cold end 7 is located in a non-sensitive area, and the sensitive area 5 is of a circular structure with the diameter of 2 mm.
The insulating high-temperature layer substrate 1 is made of a silicon carbide ceramic material; the positive thermocouple thin film array 2 is made of n-type strontium lanthanum chromate, and the negative thermocouple thin film array 3 is made of p-type indium oxide; the material of the protective layer 6 is Al2O3。
One positive thermocouple film and the negative thermocouple film thereon form a thermal node 4, and the thermal nodes 4 are distributed in a cross shape; the number of thermal nodes 4 is 25, wherein one thermal node 4 is located at the central position, the remaining 24 thermal nodes 4 are equally divided into six groups, and the radial spacing between two adjacent groups of thermal nodes 4 is 100 μm.
The preparation method of the temperature sensor for detecting the distribution of the laser spot temperature field comprises the following steps:
1) forming an anode pattern of the thin-film thermocouple by utilizing a photoetching process, and selecting a sensitive area 5 and a non-sensitive area on the surface of the insulating high-temperature layer substrate 1;
2) manufacturing a positive thermocouple film array 2 on the sensitive area 5 by adopting a magnetron sputtering method;
3) forming a negative electrode pattern of the film thermocouple by utilizing a photoetching process;
4) manufacturing a negative thermocouple film array 3 by adopting a magnetron sputtering method;
5) forming a pattern of the protective layer 6 by using a photolithography process;
6) manufacturing a protective layer 6 by adopting a magnetron sputtering method to obtain a temperature sensor sample;
7) and calibrating the temperature sensor sample to obtain the temperature sensor for detecting the distribution of the laser spot temperature field.
Annealing the product obtained in the step 4) at 1000 ℃ for 1h between the step 4) and the step 5) to crystallize each positive thermocouple film in the positive thermocouple film array 2 and each negative thermocouple film in the negative thermocouple film array 3.
The method comprises the steps of arranging a positive film and a negative film which are respectively arranged at the central position along the transverse direction and the longitudinal direction as a central film thermocouple, and lapping the negative film and the positive film with equal intervals on the positive electrode and the negative electrode of the central film thermocouple to form six temperature rings, wherein each temperature ring is provided with four thermal nodes 4, each thermal node 4 comprises one positive thermocouple film and one negative thermocouple film, and seven temperature gradients of a laser spot can be measured by utilizing the six temperature rings and the thermal node 4 at the central position.
In addition, the parameters of the magnetron sputtering method of the present invention are as follows: the sputtering power was 150W, the argon flow was 30sccm, and the vacuum degree was 3X 10-6torr, time 4 h.
The specific process of calibrating the temperature sensor sample in the invention is as follows:
the temperature sensor is placed in a temperature control box to keep the temperature of the cold end at room temperature, the sensitive area 5 of the temperature sensor is integrally heated by a small heating plate, so that the cold end 7 and the hot end of the thermocouple generate temperature gradient, further potential difference is generated, voltage acquisition is carried out by a logger reliability data acquisition instrument, and the temperature sensor is calibrated according to the acquired voltage.
Based on the thermocouple principle, when laser spots irradiate on a sensitive area 5, the temperature of the hot end of the sensor rises, so that the temperature difference between the hot end and the cold end 7 is generated, due to the Seebeck effect, the temperature difference electromotive force is generated between the cold ends 7 corresponding to the anode and the cathode of the thin film thermocouple, a temperature potential curve is obtained by performing static calibration on the sensor, so that the relation between the temperature of the hot end and the output potential of the cold end 7 is obtained, otherwise, the temperature of the hot end of the thin film thermocouple can be obtained by measuring the potential of the cold end 7, and therefore the monitoring of the temperature distribution of the laser spots is achieved.
Example one
The insulating high-temperature layer substrate 1 is made of insulating high-temperature resistant silicon carbide with the thickness of 2mm and the size of 30 multiplied by 30mm2In order to ensure the quality of the sputtered film, the substrate is washed by acetone, alcohol and deionized water in sequence, and N is used2Drying, and then placing on a hot plate at 90 ℃ for heating for 5min to remove stains, oil stains, dust and the like on the substrate 1 of the insulating high-temperature layer.
In this example, the width of each of the hot electrodes of the positive thermocouple thin film and the negative thermocouple thin film is 50 μm, and the interval between adjacent temperature rings is 100 μm. The sensor can detect 7 temperature gradients, wherein one is the center of a laser spot, the other 24 thermal nodes 4 are uniformly distributed on 6 temperature rings, and the 4 thermal nodes 4 on each temperature ring are distributed in an array at intervals of 90 degrees.
In the embodiment, the film deposition adopts magnetron sputtering technology, and the positive thermocouple material is n-type strontium lanthanum chromate (La)0.8Sr0.2CrO3) The negative thermocouple material is p-type indium oxide (In)2O3) Target material is sizeStrontium lanthanum chromate (La) of phi 101.6 x 3mm and purity 99.99%0.8Sr0.2CrO3) And indium oxide (In)2O3) Sputtering power of 150W, argon flow of 30sccm, vacuum degree of 3X 10-6torr, sputtering time 4 h. The protective layer 6 is prepared by magnetron sputtering, and the sputtering parameters are as follows: power 200W, argon flow 50sccm, vacuum 3X 10-5torr, sputtering time is 2h, and temperature of the insulating high temperature layer substrate 1 is room temperature.
In order to research the performance of the thin-film thermocouple temperature sensor and perform static calibration on the thin-film thermocouple temperature sensor, firstly, a cold end 7 is connected with a compensation lead by conductive silver paste so as to be convenient to access a test system, the thin-film thermocouple is placed in a temperature control box so as to ensure that the temperature of the cold end 7 is in a constant room temperature environment, the temperature of a small heating plate is gradually increased by adjusting the voltage of a direct-current voltage source, so that a sensitive area 5 is heated, the temperature of the heating plate is indicated by a standard k-type thermocouple, and an output voltage is acquired by a logger utility data acquisition instrument so as to obtain a temperature potential curve of the thin-film thermocouple temperature sensor.
The present embodiment only describes a temperature sensor for detecting the temperature field distribution of the laser spot detected by the temperature sensor and a specific implementation method, but the present embodiment does not limit the protection scope of the present invention, and those skilled in the art should be within the protection scope of the present invention if simple structural changes or process changes are performed according to the technology of the present invention.
Claims (1)
1. A method for preparing a temperature sensor for detecting the distribution of a laser spot temperature field is characterized in that the temperature sensor for detecting the distribution of the laser spot temperature field, it is characterized by comprising an insulating high-temperature layer substrate (1), wherein the surface of the insulating high-temperature layer substrate (1) is divided into a sensitive area (5) and a non-sensitive area, the sensitive area (5) is provided with a positive thermocouple film array (2) and a negative thermocouple film array (3) which are sequentially distributed from bottom to top, wherein one positive thermocouple film in the positive thermocouple film array (2) corresponds to one negative thermocouple film in the negative thermocouple film array (3), each negative thermocouple film covers the corresponding positive thermocouple film, and protective layers (6) cover the upper surface of the positive thermocouple film and the area, which is not covered with the positive thermocouple film array (2), on the sensitive area (5);
each negative thermocouple film and each positive thermocouple film are connected with a cold end (7), wherein each cold end (7) is positioned in a non-sensitive area;
the insulating high-temperature layer substrate (1) is made of a silicon carbide ceramic material;
the positive thermocouple thin film array (2) is made of n-type strontium lanthanum chromate, and the negative thermocouple thin film array (3) is made of p-type indium oxide;
one positive thermocouple film and the negative thermocouple film thereon form a heat node (4), and each heat node (4) is distributed in a cross shape;
the number of the thermal nodes (4) is 25, wherein one thermal node is positioned at the central position, the rest 24 thermal nodes are averagely divided into six groups, and the distance between every two adjacent groups of thermal nodes is 100 mu m;
the width of each positive thermocouple film and each negative thermocouple film is 50 micrometers;
the sensitive area (5) is of a circular structure with the diameter of 2 mm;
the method comprises the following steps:
1) forming an anode pattern of the thin-film thermocouple by utilizing a photoetching process, and selecting a sensitive area (5) and a non-sensitive area on the surface of the insulating high-temperature layer substrate (1);
2) manufacturing a positive thermocouple thin film array (2) on the sensitive area (5) by adopting a magnetron sputtering method;
3) forming a negative electrode pattern of the film thermocouple by utilizing a photoetching process;
4) manufacturing a negative thermocouple film array (3) by adopting a magnetron sputtering method;
5) forming a pattern of the protective layer (6) by using a photoetching process;
6) manufacturing a protective layer (6) by adopting a magnetron sputtering method to obtain a temperature sensor sample;
7) calibrating the temperature sensor sample to obtain a temperature sensor for detecting the distribution of the laser spot temperature field;
annealing the product obtained in the step 4) at 1000 ℃ for 1h between the step 4) and the step 5) to crystallize each positive thermocouple film in the positive thermocouple film array (2) and each negative thermocouple film in the negative thermocouple film array (3).
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| JP2010261908A (en) * | 2009-05-11 | 2010-11-18 | Geomatec Co Ltd | Laser power sensor |
| CN102353469B (en) * | 2011-09-29 | 2013-06-19 | 西北工业大学 | Online measurement device of high temperature of outer surface of high-speed aircraft, and preparation and measurement methods thereof |
| CN107012425B (en) * | 2017-03-09 | 2020-02-14 | 电子科技大学 | Composite insulating layer for thin film sensor and preparation method thereof |
| CN108817880B (en) * | 2018-06-29 | 2019-09-13 | 华中科技大学 | A kind of cutting tool and preparation method with inserted thin film temperature sensor |
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