CN103081084A - Substrate heating device - Google Patents
Substrate heating device Download PDFInfo
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- CN103081084A CN103081084A CN2011800426244A CN201180042624A CN103081084A CN 103081084 A CN103081084 A CN 103081084A CN 2011800426244 A CN2011800426244 A CN 2011800426244A CN 201180042624 A CN201180042624 A CN 201180042624A CN 103081084 A CN103081084 A CN 103081084A
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000010438 heat treatment Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 15
- 241001466460 Alveolata Species 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
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- 230000007704 transition Effects 0.000 claims description 8
- 210000000038 chest Anatomy 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 20
- 238000009826 distribution Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a susceptor for supporting a substrate (9) within a vacuum process chamber, comprising a flat surface (11) for placing the substrate (9) thereon such that the substrate (9) is in thermally conductive contact with the surface (11), whereby the susceptor (1) comprises at least three adjacent zones (5, 6, 8), an outer zone (8), a middle zone (6) and an inner zone (5), the zones (5, 6, 8) arranged concentrically around each other and extending along the surface (11), the outer zone (8) completely surrounds the middle zone (6) and the middle zone (6) completely surrounds the inner zone (5), the inner zone (5) comprises at least one inner heating element (13) affecting the inner zone (5), the outer zone (8) comprises at least one outer heating element (19) affecting the outer zone (8), the middle zone (6) exhibits a maximal thickness (15); that is smaller than the minimal thickness (12) of the inner zone (5) and smaller than the minimal thickness (16) of the outer zone (8), each thickness (12, 15, 16) extending perpendicular to the surface (11). Thus, the invention allows for providing a smooth temperature profile over the complete surface (11) area resulting in a highly uniform substrate (9) temperature and thus in an improved thickness (12, 15, 16) uniformity of a coating to be provided e.g. in a chemical vapour deposition process.
Description
Technical field
The present invention relates to a kind ofly for the pedestal at vacuum processing chamber inner support substrate, described pedestal comprises for the plane of described substrate being settled thereon so that so that described substrate contact with the heat conduction of described plane.Or rather, the present invention relates to set up very uniformly substrate temperature in large-area base plan.Especially, the invention describes a kind of very uniformly heating system that preferably has the substrate of non-circular shape for heating in vacuum environment.This heating system can be applied to many coatings or the processing substrate technique with the temperature work higher than room temperature.
Background technology
Thin film deposition or coating process are well known in this area.From that time, deposition uniformity just becomes important standard, particularly in the production of large tracts of land coating.Nowadays, in thin film technique, need to extend to large-area substrate with the layer characteristic that realizes on a small scale.Usually, what must consider is that tighter to the integrated specification on the zonule, the uniformity that then needs in larger zone is better.Typical example is integrated circuit (IC) industry: in IC industry, a plurality of thin layers are regulated each other.Need to keep described adjusting at whole substrate regions, this situation so that, in whole key characteristics of all relevant layers on whole wafer, good uniformity is very important to described all relevant layers.
Similarly example is thin-film solar cell applications.At this, need to will allow high efficiency battery behavior to be applied on the whole integration module.Zone with " falling short of specifications " characteristic will make independent deterioration of battery.Such battery has lower efficient, can bring higher series resistance.As a result, the bad zone of battery behavior has reduced the overall performance of whole solar energy module.
For chemical vapor deposition (CVD) technique, temperature homogeneity is one of most important factor.During CVD technique, (Arrhenius) behavior that chemical reaction shows so-called " Arrhenius ", wherein: deposition rate shows the exponential dependence with technological temperature.As a result, need very uniformly substrate temperature, to obtain good thickness evenness.
Current CVD system uses various measures, to obtain uniform substrate temperature.The system of prior art uses hot plate or pedestal, wherein, means with the corresponding pedestal of hot plate to cooperate basically smooth plane, is used for holding substrate and transferring heat to substrate, in order to satisfy above-mentioned even heat distribution demand.Described plane can be established as size and be not less than and will be heated or will be by a face of the plate of temperature controlled substrate regions size.Such hot plate can comprise a plurality of independently heating regions with different heat inputs.Usually, the periphery of hot plate, be that edge and bight need to be heated to the temperature higher than the center, to overcome the thermal loss that is caused by the higher thermal radiation of around hot plate and substrate, sending.
Solution for heating known in the art perhaps is attached to hot plate with electrical heating elements, perhaps integrated heating element such as heating resistor.Cooperating between heating element and the hot plate is better, and then the response to the variations in temperature in the hot plate is faster.
There is several different methods can control partly the heat absorption that enters hot plate.At US6, put down in writing the general introduction to the different heating method in 962,732.One of the possible solution that produces the substrate of thermally equivalent is to use different heating regions, and wherein, each heating region is by attached thermocouple.Each regional temperature is configured to make the more uniform particular value of substrate temperature.Determine to experience the said temperature setting.
The more complicated method of the temperature on the control hot plate is by observe the thermal uniformity of substrate with hot camera measurement.Correspondingly adjust heating region, in order to so that observe uniform temperature reading at whole substrate.The method need not to affect other parameters and namely allows to produce uniform Temperature Distribution.
Alternatively, after the layer characteristic that investigation is produced by the manufacturing process of using hot plate, can adjust the temperature of hot plate.People revise the temperature of heating region repeatedly, until obtain uniformly layer characteristic.The method is widely used for the debugging of vacuum equipment.Yet the uniformity of coating characteristic is temperature influence not only, and is subjected to air-flow and the geometric influence of depositing device.Therefore, can come by the temperature of adjusting hot plate the inhomogeneities of compensation current.
Especially, because the thermal radiation of colder chamber has on every side been caused impact to substrate bight and edge more consumingly, the heating rectangular substrate is challenging.People expectation: by improving the heat input to such rectangular area, can easily compensate the impact that thermal radiation causes substrate bight and edge.Yet, for example, and other parts of hot plate contrast, be difficult to come the enough heats of hot plate folding corner region input by simply the conductor arrangement of the heating wiring pattern of stratie being got finer and close method.Change such heating wiring pattern and mean that carrying out substantial to hot plate is the variation of machinery, this variation is expensive and time-consuming.A solution of this problem is to heat individually folding corner region, thereby the heat that discharges to hot plate is carried out the electricity adjusting.It is unpractical that the method is proved to be.In fact, the most of heat that imports the bight with so independent heating region into can be dissipated to equally hot plate than cool region, thereby affect the Temperature Distribution of whole hot plate.Make described zone each other thermal insulation can avoid above situation, but will cause the local temperature of thermal insulating area to change.
Current, all solutions that propose have in the prior art all run into this essence predicament.Most pedestal or hot plate material are conductive materials, and they also conduct to substrate as far as possible efficiently with the heat of described heating wires or described heating element.For example, usually adopt aluminium, copper or carbon as base material.The bad material require of conductibility is arranged heating element finer and close, to be heated uniformly.The good material of conductibility is coated with the local maximum heat of erasing and being produced by the heating wires position basically.Yet this effect is reactive in edge and the bight of pedestal.Need there strong maximum heat, with the edge of compensation substrate and the thermal loss in bight.Make simply the temperature in the overheated same raising central hot of edge and folding corner region zone.
This effect of example susceptible of proof shown in Fig. 1 and 2.Use comprises four independent operations and controlled heat wire 2,3,4 pedestal 1.All heating wires 2,3,4 are installed on the whole hot plate, namely are installed on the described substrate 1.Four heating wires 2,3,4 form 4 different zones 5,6,7.First area 5 is central areas of the most of substrate 9 of heating.Second area 6 is the selectable zone lines that make the temperature difference equilibrium between first area 5 and the second area 6.The edge of the 3rd regional 7 heated substrates 9.For this Three regions 5,6,7, heating wires 2,3,4 as by as shown in Figure 2 from as described in hot plate 1 below install, wherein omitted second area 6.
Interval between each heating wires 2 in the central area 5 is also wider than the width of fringe region 7.Edge heating zone 8 has heating wires 4; Described edge heating zone 8 is arranged near the top of hot plate 9, but recessed down from flat heated.This edge heating zone 8 is fixed on the hot plate 9 by edge strip 10, and protects this edge heating zone 8 not polluted by CVD technique.Substrate 9 is slightly larger than the surface area of pedestal 1, so that so that the edge of substrate 9 and edge strip 10 are overlapping, thereby the edge of substrate 9 is heated by edge strip 10.
Following form shows by the temperature of operator's setting with as by indicated 9 the actual temperature that reach of hot plate of thermocouple that are attached in the specific region 5,6,7,8.
As can see ground in this general introduction, owing to be subject to the impact of the Temperature Setting in first area 5 and the 3rd zone 7, institute exceeds its target temperature so that second area 6 is superheated to.Because heating region 5,6,7,8 crosstalk are so can not accurately heat the scope of second area 6.
Yet, the temperature of periphery and fringe region 8 need to be increased to the temperature that is higher than central area 5 far away, this is because if do not improve like this, the temperature of substrate 9 peripheries will be too low, so that can not evenly improve.
The solution that heat between the zones of different 5,6,7,8 is crosstalked is to make pedestal 1 with a plurality of thermal insulator.Be anticipated that, come mounting center zone plate 5 by the mode of being surrounded by the framework of the independent fringe region 8 that independently is heated equally.Yet if make pedestal 1 with a plurality of thermal insulator, this solution has a plurality of defectives.At first, pedestal 1 is not to be made by a monoblock pedestal 1 material monolithic.Because must hanging down, the tolerance between the different plates of pedestal 1 is enough to allow equably heated substrates 9, so this solution is so that manufacturing pedestal 1 is both difficult and expensive.Secondly, the gap that is difficult between central area 5 and fringe region 8 obtains level and smooth Temperature Distribution.Thickness according to substrate 9 carries out required smearing to the binding site between two zones 5,8, may be not enough to compensate the thermal loss that the binding site by central area 5 and fringe region 8 causes.
Summary of the invention
Therefore, the objective of the invention is to overcome the shortcoming of previously described prior art, a kind of pedestal namely is provided, it is used to the large-area substrates plane to set up very uniformly substrate temperature.
Reach this purpose by independent claims.Favourable embodiment has been described in detail in detail in the dependent claims.
Especially, this purpose reaches for the pedestal at vacuum processing chamber inner support substrate by a kind of, described pedestal comprises the plane, described plane is used for described substrate is placed in described plane, so that described substrate contacts with the heat conduction of described plane, wherein, pedestal comprises at least three adjacent zones: the perimeter, zone line and interior zone, described zone is concentrically with respect to one another around arranging and extending along described plane, the perimeter surrounds zone line fully, and zone line surrounds interior zone fully, interior zone comprises at least one internal heating element that affects interior zone, the perimeter comprises at least one the external heat element that affects the perimeter, and the minimum thickness of zone line is both less than the minimum thickness of interior zone, less than the minimum thickness of perimeter, described each thickness extends in the vertical direction in described plane again.
Surprisingly, the applicant has been found that, if the thickness of the zone line between perimeter and the interior zone is less than the thickness of its peripheral region, namely less than the thickness of interior zone and perimeter, if and interior zone and perimeter all comprise the heating element for the substrate that affects respective regions, made by for example monoblock of aluminium, copper and/or carbon so and pedestal with at least three different zones can provide very uniformly substrate temperature in whole base plan.Adopt like this according to pedestal of the present invention, can provide strong maximum heat at edge and the place, bight of substrate, but can not cause to the substrate in the interior zone scope negative effect, namely can not make it overheated.Therefore, the present invention allows to provide level and smooth Temperature Distribution at whole surface area, causes very uniformly substrate temperature, thereby makes the coating layer thickness that for example will provide in chemical vapor deposition method more even.Conversely, pedestal according to the present invention has also reduced manufacturing cost when improving the substrates coatings quality.In a word, than the system of prior art, pedestal of the present invention has improved coating characteristic.
Term on the present invention meaning " processing " comprises any chemistry, physics and/or the mechanical effect that acts on substrate.
Term on the present invention meaning " substrate " comprises will use element, parts or the workpiece of processing according to vacuum flush system of the present invention.Substrate is including, but not limited to having rectangle, square or round-shaped smooth, tabular parts.Preferably, substrate is suitable for making thin-film solar cells, and substrate comprises float glass, fiber glass and/or quartz glass.More preferably, substrate be arranged to such as thin glass plate, size 〉=1m
2The plane general planar, complete smooth substrate most preferably.
Term on the present invention meaning " vacuum treatment " or " vacuum flush system " comprise a housing at least, and described housing is used for processing described substrate under the pressure lower than ambient atmosphere pressure.
Term chemical vapour deposition (CVD) (being CVD) and variant thereof comprise that in the present invention meaning permission is being subjected to hot substrate to carry out the well-known technology of the deposition of layer.Usually to vacuum flush system feed fluid or gas (gaseous precursors material), wherein, the thermal response of precursor material causes the deposition of layer.Usually, be used for producing at vacuum flush system by adopting low-pressure chemical vapor deposition (being LPCVD) technique the precursor material selection diethyl zinc (being DEZ) of tco layer.Term " TCO " represents transparent conductive oxide, be that tco layer is transparency conducting layer, thus, no matter be concerning CVD, LPCVD, plasma reinforced chemical vapour deposition (being PECVD) or physical vapour deposition (PVD) (being PVD), following term: layer, coating, deposition and film all are used for the film that deposits in vacuum treatment interchangeably in this invention.
Term " solar cell " or " barrier-layer cell ", " PV battery " comprise the electric component that the light that is in essence sunlight can be directly changed into electric energy by means of photovoltaic effect in the present invention meaning.Thin-film solar cells generally includes the first electrode or front electrode, one or more semiconductive thin film PIN knot and the second electrode or the back electrode that is stacked on continuously on the substrate.Each PIN knot or film photoelectric converter unit comprise the i type layer that is sandwiched between p-type layer and the N-shaped layer, and " p " representative is just mixed thus, and the negative doping of " n " representative.Be the major part that the i type layer of intrinsic semiconductor layer takies the thickness of described film PIN knot in essence, thus, light-to-current inversion mainly appears in this i type layer.Therefore, preferably, described substrate is the substrate for the manufacture of the thin film photovoltaic battery.
Term " smooth " the present invention meaning comprise not coarse, namely do not have a surface of groove etc.Preferably, term " smooth " means the roughness grade≤N9 of respective surfaces.
According to a preferred embodiment of the invention, the minimum thickness of interior zone is greater than the maximum ga(u)ge of perimeter.Because the perimeter thickness less than interior zone thickness allows chain of command more meticulously to the temperature in the respective external zone at the substrate boundaries of perimeter and/or edge, so such embodiment also provides the uniform substrate temperature across described plane.
Usually, can be according to the known any means of prior art, for example realize the minimum thickness of zone line by slotted hole, slit and/or thorax hole.Yet according to a highly advantageous elaboration of the invention, pedestal comprises that at least one is recessed, described at least one recessed rectangular cross section that has for the minimum thickness of realizing zone line.Preferably, pedestal comprises two rectangular recessed, and described two rectangular recessed are arranged in each other behind in zone internally in the scope of perimeter, and preferably again divide (subdivided) by dividing wall.More preferably, a recessed side that is arranged on pedestal describedly is set up recessed side back to the pedestal another side that can settle described substrate, namely back to base plane.Under this background, further preferably, with parallel plane recessed width 〉=8mm and≤15mm, be preferably 11mm.
In another embodiment, the plane comprises transitional region, described transitional region has the thickness identical with interior zone, transitional region comprises a plurality of transition heating elements that affect transitional region, interior zone comprises a plurality of internal heating elements, zone line surrounds transitional region fully, and transitional region is surrounded interior zone fully, internal heating element and transition heating element are arranged to respectively heating wires, the diameter of wire of described inner heating wires is larger than the diameter of wire of described transition wire, and the each interval between each described inner heating wires is also large than the each interval between each described transition wire.Owing to further interior zone is isolated from the transitional region of contiguous zone line, so such embodiment also allows to control more meticulously substrate temperature.This also allows the temperature between the different zones has been done further equilibrium, thereby has improved coating quality.
Preferably, all heating elements are arranged to heating wires, and in particularly preferred embodiment of the present invention: described heating wires is arranged in the pedestal.In another embodiment, heating element centers on the whole circumference extension of zones of different and/or covers whole corresponding zone.
In another embodiment, preferably, the thickness 〉=1mm of zone line and≤4mm, be preferably 2mm; And/or the thickness 〉=10mm of interior zone and≤20mm, be preferably 14mm.Provide the pedestal with such thickness to cause optimum temperature profile across base plane, thereby cause the optimum temperature for the deposition of carrying out layer at the substrate that so is heated.
In particularly preferred embodiment, pedestal comprises that described zone line has is arranged to the recessed of groove, also has the bar bar between groove for the alveolate texture of the minimum thickness of realizing zone line.Preferably, groove with parallel plane scope in width 〉=8mm and≤15mm, be preferably 11mm.The alveolate texture of the zone line that is used for the realization pedestal like this can keep described substrate reliably when high temperature.The bar bar has improved intensity, has preferably introduced the bar bar of the base thickness with standard.In other words, such alveolate texture so that between perimeter and the interior zone temperature gradient not too obvious.In another embodiment, perimeter, zone line and/or interior zone comprise respectively rectangular planar shape, so that rectangular substrate can be placed on the plane, thus, preferably, the border of substrate and/or edge placement are externally on the zone.
Purpose of the present invention is also arranged solution by a kind of pedestal of aforementioned pedestal and substrate that comprises, thus, and the size on described plane or larger than the size of described substrate, the size of perhaps mating described substrate.
In addition, purpose of the present invention solves by a kind of method for the manufacture of aforementioned pedestal, the minimum thickness of zone line is realized by a side that slotted hole, slit and/or thorax hole is attached to pedestal thus, and the described pedestal side in slotted hole, slit and/or thorax hole that added is back to the another side that can settle the pedestal of described substrate.Those skilled in the art can infer from previously described pedestal according to the present invention other embodiment and the advantage of such method.
Purpose of the present invention is also by solving for the method that film is deposited on the substrate, comprise step: as previously described pedestal is set in process chamber, at the plane of pedestal upper support substrate, be provided for heating the energy of described substrate to internal heating element and external heat element, and in the process chamber for the precursor material that is applied at the described film of described substrate deposition.
Description of drawings
According to the embodiment that describes hereinafter these and other aspect of the present invention has been described clearly, and, these and other aspect of the present invention illustrated with reference to the described embodiment that describes hereinafter.
In the accompanying drawings:
Fig. 1 shows the top view according to the pedestal of prior art;
Fig. 2 shows the end view according to the pedestal of prior art;
Fig. 3 shows the end view of pedestal according to a preferred embodiment of the invention;
Fig. 4 shows the end view of the part of pedestal according to a preferred embodiment of the invention; And
Fig. 5 shows the Temperature Distribution of the substrate of processing with pedestal according to the preferred embodiment of the invention.
Embodiment
Fig. 3 shows be used for supporting and hot plate or the pedestal 1 of thermal control substrate 9 according to a preferred embodiment of the invention with end view.Pedestal 1 has the plane 11 of general planar, and the plane 11 of described general planar is used in the mode of heat conduction contact substrate 9 being settled it; Described pedestal 1 also has specific, the inconstant thickness 12 of measuring in the direction vertical with described plane 11.
The monoblock that hot plate 1 can be preferably by both covering internal zone 5 and zone line 6, also covers the major part (preferably covering whole perimeter 7) of perimeter 7 is at least made.Can by arrange in the side back to substrate 9 of hot plate 1, form recessed 23 slotted hole or slit or thorax hole and realize thickness 15 attenuation with zone line 6.In one embodiment, hot plate 1 has for the shape that receives such as the essentially rectangular of the rectangular substrate 9 of thin glass sheet.
For heated substrates 9 partly and need not affect the whole Temperature Distribution of hot plate 1, introduce the regional area 6 of thinner pedestal 1 material.The diameter of wire of the heating wires 13 of interior zone 5 (for example 4mm) different from the diameter of wire of the heating wires 17 of transitional region 18 (for example 3mm), each heating wires 13 interval each other of interior zone 5 are also different from each heating wires 17 interval each other of transitional region 18.External heat element 19 is arranged in supporting surface 11 downsides back to substrate 9 of pedestal 1, and itself is kept by pedestal 1.
The pedestal 1 of prior art as shown in Figure 2 and the significant difference according between the current solution of the present invention as shown in Figure 3 are: the substrate 1 material attenuation between interior zone 5 and perimeter 7.In this so-called heat transfer zone, namely the thickness 15 of vertical pedestal 1 material in the plane 11 of the imagination in zone line 6 and pedestal 1 only keeps 1-4mm, in contrast to this be: the thickness 12 of pedestal 1 material in interior zone 5 is 14mm.In current embodiment, the distance 15 between the upper and lower surface 11 of pedestal 1 only is that about 2mm is thick.In described embodiment, aluminium is used as the material with the pedestal 1 of about 200 ℃ of operations.As shown in Figure 4, for those temperature operations, alveolate texture 20 is used for zone line 6.
Most of alveolate texture 20 is by being arranged to recessed 23 the forming of groove 21 that width is 11mm.In order to improve intensity, introduce the bar bar 22 of pedestal 1 thickness with standard.If need to must be more level and smooth in interior zone 5 and the variations in temperature between the perimeter 7 of pedestal 1, so, in alveolate texture 20, the degree of depth of groove 21 or width can be different.In described embodiment, outer groove 21 is darker than inner groovy 21, and pedestal 1 thickness at groove 21 places is 2mm outside, and pedestal 1 thickness at inner groovy 21 places is 4mm.This is so that the temperature gradient between perimeter 7 and the interior zone 5 is not too obvious.
Shown in next following form, the present invention clearly allows heating region 5,7 decoupling zero.So shown in the form, heating region 5,7 actual temperature equal the operator's set point to hot plate 1.In this example, also can be as independent control area temperature the example of the above prior art that illustrates.
By using the present invention, make the very uniformly Temperature Distribution that realizes substrate 9 become possibility.As example, Fig. 5 shows the Temperature Distribution of the 3mm glass substrate 9 on the hot plate of pedestal 1 according to the present invention.Minimum value from the end face 11 of pedestal 1 to the distance 15 of the bottom surface of alveolate texture 20 is 2mm.According to temperature scanning, can realize the temperature gap (△) of 3K.Below indicated the Temperature Setting for zone 5,6,7:
Although detailed illustration and described the present invention in accompanying drawing and above stated specification, such illustration and explanation are considered to illustrative or exemplary, rather than restrictive; The present invention is not limited to disclosed embodiment.By studying Figure of description of the present invention, summary of the invention and claims carefully, those skilled in the art is putting into practice claimed other variants that can understand and realize the embodiment of the invention when of the present invention.In the claims, literal " comprises " does not get rid of other elements or step, and indefinite article " " is not got rid of plural number.The pure fact of some measure of enumerating in mutually different dependent claims does not represent advantageously to use the combination of these measures.Any Reference numeral in the claim should not be interpreted into the restriction to protection range.
Reference numerals list:
1 pedestal
2 heating wires
3 heating wires
4 heating wires
5 first areas, interior zone
6 second areas, zone line
7 the 3rd zones
8 fringe regions, perimeter
9 substrates
10 edge strip
11 planes
The thickness of 12 interior zones
13 internal heating elements
14 edges and bight
The thickness of 15 zone lines
The thickness of 16 perimeters
17 transition heating elements
18 transitional regions
19 external heat elements
20 alveolate textures
21 grooves
23 is recessed
Claims (13)
1. pedestal that is used at vacuum processing chamber inner support substrate (9), it comprises plane (11), described plane (11) are used for described substrate (9) is settled thereon, so that described substrate (9) contacts with described plane (11) heat conduction, wherein,
Described pedestal (1) comprises at least three adjacent zones (5,6,8): perimeter (8), zone line (6) and interior zone (5), described zone (5,6,8) extend around layout and along described plane (11) concentrically with respect to one another,
Described perimeter (8) surrounds described zone line (6) fully, and described zone line (6) surrounds described interior zone (5) fully,
Described interior zone (5) comprises that at least one affects the internal heating element of described interior zone (5) (13),
Described perimeter (8) comprises that at least one affects the external heat element (19) of described perimeter (8), and
The maximum ga(u)ge (15) of described zone line (6) is both less than the minimum thickness (12) of described interior zone (5), also less than the minimum thickness (16) of described perimeter (8), described each thickness (12,15,16) extends in the direction vertical with described plane (11).
2. pedestal according to claim 1 (1), wherein, the minimum thickness (12) of described interior zone (5) is greater than the maximum ga(u)ge (16) of described perimeter (8).
3. according to each the described pedestal (1) in the aforementioned claim, wherein, described pedestal (1) comprises that at least one has recessed (23) of rectangular cross section, is used for realizing the minimum thickness (15) of described zone line (6).
4. according to each the described pedestal (1) in the aforementioned claim, wherein, the width 〉=8mm of described recessed (23) parallel with described plane (11) and≤15mm, be preferably 11mm.
5. according to each the described pedestal (1) in the aforementioned claim, wherein, described pedestal (1) comprises transitional region (18), described transitional region (18) has the thickness (12) identical with described interior zone (5), and the transition heating element (17) that comprises the described transitional region of a plurality of impacts (18), described interior zone (5) comprises a plurality of internal heating elements (13), described zone line (6) surrounds described transitional region (18) fully, and described transitional region (18) is surrounded described interior zone (5) fully, described internal heating element (13) and described transition heating element (17) are configured to respectively heating wires, and the diameter of described inner heating wires and spacing are respectively greater than diameter and the spacing of described transition wire.
6. according to each the described pedestal (1) in the aforementioned claim, wherein, described heating element (13,17,19) is arranged in the described pedestal (1).
7. according to each the described pedestal (1) in the aforementioned claim, wherein, the thickness (16) of described zone line (6) 〉=1mm and≤4mm, be preferably 2mm; And/or the thickness (12) of described interior zone (5) 〉=10mm and≤20mm, be preferably 14mm.
8. according to each the described pedestal (1) in the aforementioned claim, wherein, described pedestal (1) comprises that this alveolate texture of alveolate texture (20) (20) be used to the less thickness (15) of realizing described zone line (6) has recessed (23) of being arranged to groove (21) and is positioned at bar bar (22) between the described groove (21).
9. according to each described pedestal (1) of aforementioned claim, wherein, described groove (21) in the scope parallel with described plane (11) width 〉=8mm and≤15mm, be preferably 11mm.
10. according to each described pedestal (1) of aforementioned claim, wherein, described perimeter (8), described zone line (6) and/or described interior zone (5) comprise the shape of rectangle plane (11), so that rectangular substrate (9) can be placed on the described plane (11).
11. a pedestal (1) arranges that it comprises that the size of described plane (11) is greater than the size of described substrate (9), and is perhaps suitable with its size according to each described pedestal (1) and substrate (9) in the aforementioned claim.
12. one kind for the manufacture of the method according to each the described pedestal (1) in the aforementioned claim 1 to 10, wherein, by a side at described pedestal (1) minimum thickness (15) that described zone line (6) are realized in slotted hole, slit and/or thorax hole is set, this side of described pedestal (1) can be settled the side of described substrate (9) on it.
13. one kind is used for film is deposited on method on the substrate (9), comprises step:
In a process chamber, arrange according to each the described pedestal (1) in the aforementioned claim 1 to 10,
At the described substrate of described plane (11) upper support (9) of described pedestal (1),
Provide energy in order to heat described substrate (9) to described internal heating element (13) and described external heat element (19), and
In described process chamber, supply precursor material, so that at the described film of described substrate (9) deposition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37987610P | 2010-09-03 | 2010-09-03 | |
| US61/379,876 | 2010-09-03 | ||
| PCT/EP2011/065168 WO2012028704A1 (en) | 2010-09-03 | 2011-09-02 | Substrate heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103081084A true CN103081084A (en) | 2013-05-01 |
Family
ID=44735886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011800426244A Pending CN103081084A (en) | 2010-09-03 | 2011-09-02 | Substrate heating device |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2612351A1 (en) |
| JP (1) | JP2013538455A (en) |
| KR (1) | KR20130102577A (en) |
| CN (1) | CN103081084A (en) |
| WO (1) | WO2012028704A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109314073A (en) * | 2016-06-20 | 2019-02-05 | 贺利氏特种光源有限公司 | Substrate supporting element for bearing support |
| CN110396680A (en) * | 2019-07-19 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | A kind of extension consersion unit |
| CN111694181A (en) * | 2020-07-07 | 2020-09-22 | 中航华东光电有限公司 | Method for uniformly heating liquid crystal screen assembly at low temperature |
| CN112071773A (en) * | 2019-06-10 | 2020-12-11 | 细美事有限公司 | Apparatus for processing substrate and method for processing apparatus |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614709B (en) * | 2013-12-12 | 2015-10-07 | 济南大学 | For the combination base type electromagnetic heater of MOCVD reaction chamber |
| US10655226B2 (en) * | 2017-05-26 | 2020-05-19 | Applied Materials, Inc. | Apparatus and methods to improve ALD uniformity |
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| WO2000058048A1 (en) * | 1999-03-29 | 2000-10-05 | Brooks Automation, Inc. | Hybrid heater with ceramic foil serrated plate and gas assist |
| JP2006137650A (en) * | 2004-11-15 | 2006-06-01 | Taiheiyo Cement Corp | Lightweight and high stiffness ceramic member |
| US20060191639A1 (en) * | 2003-08-18 | 2006-08-31 | Sumi Tanaka | Substrate holding structure and substrate processing device |
| CN101390444A (en) * | 2006-02-20 | 2009-03-18 | 科发伦材料株式会社 | Planar heater |
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| US6399926B2 (en) * | 2000-04-03 | 2002-06-04 | Sigmameltec Ltd. | Heat-treating apparatus capable of high temperature uniformity |
| JP2002151412A (en) * | 2000-10-30 | 2002-05-24 | Applied Materials Inc | Semiconductor manufacturing apparatus |
| US6962732B2 (en) | 2001-08-23 | 2005-11-08 | Applied Materials, Inc. | Process for controlling thin film uniformity and products produced thereby |
-
2011
- 2011-09-02 KR KR1020137008445A patent/KR20130102577A/en not_active Application Discontinuation
- 2011-09-02 JP JP2013526482A patent/JP2013538455A/en not_active Withdrawn
- 2011-09-02 WO PCT/EP2011/065168 patent/WO2012028704A1/en active Application Filing
- 2011-09-02 CN CN2011800426244A patent/CN103081084A/en active Pending
- 2011-09-02 EP EP11764119.1A patent/EP2612351A1/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000058048A1 (en) * | 1999-03-29 | 2000-10-05 | Brooks Automation, Inc. | Hybrid heater with ceramic foil serrated plate and gas assist |
| US20060191639A1 (en) * | 2003-08-18 | 2006-08-31 | Sumi Tanaka | Substrate holding structure and substrate processing device |
| JP2006137650A (en) * | 2004-11-15 | 2006-06-01 | Taiheiyo Cement Corp | Lightweight and high stiffness ceramic member |
| CN101390444A (en) * | 2006-02-20 | 2009-03-18 | 科发伦材料株式会社 | Planar heater |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109314073A (en) * | 2016-06-20 | 2019-02-05 | 贺利氏特种光源有限公司 | Substrate supporting element for bearing support |
| CN112071773A (en) * | 2019-06-10 | 2020-12-11 | 细美事有限公司 | Apparatus for processing substrate and method for processing apparatus |
| CN110396680A (en) * | 2019-07-19 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | A kind of extension consersion unit |
| CN111694181A (en) * | 2020-07-07 | 2020-09-22 | 中航华东光电有限公司 | Method for uniformly heating liquid crystal screen assembly at low temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012028704A1 (en) | 2012-03-08 |
| EP2612351A1 (en) | 2013-07-10 |
| KR20130102577A (en) | 2013-09-17 |
| JP2013538455A (en) | 2013-10-10 |
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Application publication date: 20130501 |