CN109722712A - A kind of method of the Uniform Doped of SiC single crystal metal impurities - Google Patents
A kind of method of the Uniform Doped of SiC single crystal metal impurities Download PDFInfo
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Abstract
The present invention relates to a kind of methods of the Uniform Doped of SiC single crystal metal impurities, belong to technical field of crystal growth, method include by SiC powder and to dopant material after evenly mixing, the polycrystalline Si C block of Uniform Doped metal is thermally formed using flat-temperature zone high-temperature pressure, SiC polycrystalline block is cut into small size cubic block, it is uniformly mixed with SiC powder again, PVT growth is put into carrying out crystal growth in graphite crucible, routinely method for monocrystal growth is the SiC for obtaining the Uniform Doped metal impurities of set doping concentration, metal impurities gradually can uniformly discharge in PVT growth with the decomposition of SiC in SiC polycrystalline block, to achieve the purpose that Uniform Doped, this method is low to SiC single crystal equipment requirement, without transformation, other impurities are not introduced and repeatability is high.
Description
Technical field
The present invention relates to a kind of methods of the Uniform Doped of SiC single crystal metal impurities, belong to technical field of crystal growth.
Background technique
As the Typical Representative of third generation semiconductor material, SiC is the current relatively rapid semiconductor of development.Material
Property determine the application field of material.SiC material is big with forbidden bandwidth, saturated electrons speed is high, critical breakdown electric field
The excellent semiconducting behaviors such as Qiang Gao, thermal conductivity height are very suitable to prepare high temperature, high frequency, large power semiconductor device, Neng Gousheng
The field for appointing the semiconductors such as Si that can not apply.Therefore SiC has huge application in high temperature, high frequency, high-power and anti-radiation field
Potentiality.In field of microelectronic devices, SiC base P-i-N diode, heterojunction bipolar transistor, high electronics have successfully been developed
Mobility transistor etc., and be widely used in fields such as aerospace, radar communication, electric car, wireless communication base stations.?
Field of power electronics is improving electric energy benefit using devices such as commercialized SiC diode, SiC JFET, SiC MOSFET as representative
With efficiency and realize power electronic equipment miniaturization in terms of play huge advantage, SiC power electronic devices in transmission system, match
The fields such as electric system, Electric power car, hybrid vehicle, various industrial motors, photovoltaic DC-to-AC converter will gradually embody its performance
With the advantage in terms of reduction system cost.
As semiconductor, the electric conductivity of SiC material can be regulated and controled by element doping.According to the application field of SiC
Difference, the SiC substrate material for having N-type, p-type different with semi-insulating type.N-type SiC crystal growing technology is relatively mature at this stage,
Commercialization is realized.Semi-insulation SiC substrate has the supplier of 2-3 family in the world.And P-type material is difficult to obtain.Tracing it to its cause is
When carrying out the growth of p-type SiC single crystal using physical vapor transport, what is be all made of is the metal impurities such as Al, Ga.Due to metal Al,
Ga doped source vapour pressure is big, and doped source is easy to cause to concentrate release in crystal growing process, adulterate the problems such as uneven.In order to
Solve the problems, such as this, part researcher to a certain extent improves physical vapor transport device, and crucible bottom is added
Add a gas path pipe, pipeline is for being passed through dopant gas component.The device is adulterated primarily directed to Al component, and vapour pressure is high
The problem of, realize the purpose of the lasting doping in the source Al.But TMAl can decomposite H in this method, be passivated acceptor atom.Also have in earthenware
An Al reservoir is added in crucible bottom, places the source solid-state Al, and Al component enters growth room under the transport of carrier gas, realizes mixing for crystal
It is miscellaneous.There are the problem of, the extremely difficult control of the temperature of Al reservoir cannot achieve quantitative doping.And in this seminar once utilizes early period
Setting crucible mode realizes the doping of transition metal V and metal Al.There is also certain drawbacks, i.e. impurity for the mode of built-in crucible
Release be although sustained, but discharge process there is also non-uniform phenomenons.
As it can be seen that there is still a need for improvement for metal-doped technology at this stage.Therefore it provides a kind of SiC single crystal metal impurities is uniform
The method of doping is very necessary.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of method of the Uniform Doped of SiC single crystal metal impurities.
Technical scheme is as follows:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, comprises the following steps that
(1) it is uniformly mixed by high-purity alpha-SiC powder and to dopant material, with the solid solubility to dopant material in SiC
As the maximum doping variable to dopant material；For example, table 1 lists solid solubility of the several frequently seen element in SiC.With Al
For element, the solid solubility of Al element is 7.0 × 1020cm-3, i.e. 9811ppm.In actual operation, such as using 1000g's
SiC can mix one or more of metal, oxide, carbide or silicide of the 9.811g of element containing Al as raw material.
Solid solubility of the different elements of table 1 in SiC
(2) after mixing, mixed powder is filled up into high-purity sealed graphite crucible, and be put into temperature up to 2000 °
Heating equipment in, be placed in flat-temperature zone；After closing heating equipment, takes out repeatedly and remove air remaining in growth chamber after filling, especially
It is nitrogen, the oxygen in air, is passed through the inert gases such as argon gas as background gas, pressure keeps normal pressure；Then it heats up, keeps the temperature
It is cooled to room temperature again afterwards；Take out established metal-doped uniform polycrystalline block；
(3) by step (2) treated polycrystalline block is cut into bulk polycrystal, bulk polycrystal is cubic block or pane etc.
Shape；
(4) bulk polycrystal powder is uniformly mixed again with growth with SiC highly pure powder, and is put into PVT growth graphite
Crystal growth is carried out in crucible, routinely method for monocrystal growth can be obtained the Uniform Doped metal impurities of set doping concentration
SiC。
Mixed proportion is consistent with doping target, by taking the doping of Al as an example, intends obtaining Al doping concentration 7.0 × 1018cm-3, choosing
Take 7.0 × 10 of the element containing Al20cm-3Polycrystal material 10g mixed with 1000gSiC powder.Pass through the mixing of this step, it can
Reach Uniform Doped purpose, can also effectively dilute doping.
Preferred according to the present invention, in step (1), described to dopant material is metal, oxide, carbide or silication
One or more of object, in order to avoid introduce other impurities.
It is further preferred that the hybrid mode includes ball milling or stirring in step (1), reach uniform mixing.
Preferred according to the present invention, in step (2), being passed through as the inert gas of background gas is argon gas.
It is further preferred that after being passed through argon gas, being warming up to 1800-2500 DEG C, 10 minutes heating-up times-in step (2)
48h。
2-48h is kept the temperature it is further preferred that in step (2), after heating is cooled to room temperature again, 2-50 DEG C of cooling rate/
min。
Preferred according to the present invention, in step (3), cubic block magnitude range is 1*1*1-10*10*10, unit mm3。
The principle of the present invention is as follows:
Flat-temperature zone high-temperature pressure heating guarantee metal impurities can Uniform Doped into SiC powder and form Uniform Doped metal
Polycrystalline Si C block, be mixed into SiC powder and grown as doped source using the C of polycrystalline Si containing metallic monolith, using this side
Metal impurities gradually can uniformly discharge in PVT growth with the decomposition of SiC in the SiC polycrystalline block that method obtains, to reach equal
The purpose of even doping.
Its growth pattern of different crystalline materials is different, if sapphire growth is using guided mode growing method, i.e.,
Solution is become from solid in its raw material growth course, seed crystal is contacted with solution.And the method for vapor-phase growing that the application SiC is used,
Raw material is to become gas from solid in growth, and seed crystal is not contacted with raw material.Metal Al, Ga doped source vapour pressure is big, is easy to lead
Doped source is caused to concentrate release in crystal growing process, adulterate the problems such as uneven.Therefore the application it is main it is envisaged that
The sustained release problem of metallic element, in addition to needing the step of mixing briquetting also to need be placed into powder after carrying out high-temperature process, stripping and slicing
Step in material, to guarantee uniform doping.
Beneficial effects of the present invention:
1, it can realize that the uniform, controllable of metal impurities adulterates and can carry out various metals using technical solution of the present invention to be total to
With doping.
2, technical solution of the present invention is low to SiC single crystal equipment requirement, without transformation.Base is grown in the PVT of original maturation
Growth can be completed on plinth.
3, the method for the present invention does not introduce other impurities and repeatability is high.
Detailed description of the invention
Fig. 1 is growth room's structural schematic diagram of physical vapor transport (PVT) method growth SiC crystal in embodiment 1；
Fig. 2 is the SIMS test result of Al doping；
Fig. 3 is the SIMS test result of B doping；
Wherein: 1, graphite fibre insulating layer, 2, seed crystal, 3, crucible, 4, source material powder.
Specific embodiment
Invention is further explained by the following examples, but the present invention is not limited only to following embodiment.
As shown in Figs. 1-3.
Embodiment 1:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, comprises the following steps that
(1) uniformly mixed by high-purity alpha-SiC powder and to dopant material, hybrid mode includes ball milling or stirring, with to
Solid solubility of the dopant material in SiC is as the maximum doping variable to dopant material；It is described to dopant material be metal, oxygen
One or more of compound, carbide or silicide, in order to avoid introduce other impurities.
(2) after mixing, mixed powder is filled up into high-purity sealed graphite crucible, and be put into temperature up to 2000 °
Heating equipment in, be placed in flat-temperature zone；After closing heating equipment, takes out repeatedly and remove air remaining in growth chamber after filling, especially
It is nitrogen, the oxygen in air, is passed through the inert gases such as argon gas as background gas, pressure keeps normal pressure.Then it heats up, heats up
To 1800 DEG C, the heating-up time 10 minutes.2h is kept the temperature after heating is cooled to room temperature, 2 DEG C/min of cooling rate again；It takes out established
Metal-doped uniform polycrystalline block.
(3) by step (2), treated that polycrystalline block is cut into bulk polycrystal, and bulk polycrystal is cubic block.
(4) bulk polycrystal powder is uniformly mixed again with growth with SiC highly pure powder, and is put into PVT growth graphite
Crystal growth is carried out in crucible, routinely method for monocrystal growth can be obtained the Uniform Doped metal impurities of set doping concentration
SiC。
Embodiment 2:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, step is as described in Example 1, the difference is that step
Suddenly in (2), after being passed through argon gas, 2500 DEG C are warming up to, heating-up time 48h.
Embodiment 3:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, step is as described in Example 1, the difference is that step
Suddenly 48h, which is kept the temperature, in (2), after heating is cooled to room temperature, 50 DEG C/min of cooling rate again.
Embodiment 4:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, step is as described in Example 1, the difference is that step
Suddenly it in (2), is kept the temperature after heating and is cooled to room temperature again for 24 hours, 30 DEG C/min of cooling rate.
Experimental example 1:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, comprises the following steps that
(1) Al of purity 5N is chosen2O3As doped source, 18.53g Al is weighed2O3(the Al element that conversion is 9.811g)
With 1000g high-purity alpha-SiC powder, it is put into ball mill mixing 10h.
(2) after mixing, by step (1), treated that powder is put into long 180mm, high-purity sealing stone of diameter 300mm
Black crucible.Selection flat-temperature zone is 20cm, can be heated to 2000 ° of heating equipment, and high-purity sealed graphite crucible is placed constant temperature
Area.After closing heating equipment, takes out repeatedly and remove air remaining in growth chamber after filling, be passed through argon gas as background gas, pressure
Keep normal pressure.2000 DEG C are warming up in 20 minutes simultaneously, and is kept the temperature after 2h with fast cooling to room temperature, and cooling rate is greater than 15
℃/min.Take out established metal-doped uniform polycrystalline block.
(3) by step (2) treated polycrystalline block with diamond cut wire cutting at 5*5*5mm3Cubic block.
(4) the blocky SiC polycrystalline block of step (3) treated 20g is uniformly placed into the SiC powder of 1000g, again
It is uniformly mixed, is put into PVT growth graphite crucible, SiC single crystal growth is carried out using PVT method.Obtain set doping concentration
The SiC of Uniform Doped metal impurities.
After growth, electrical properties and SIMS measurement, as a result as shown in Fig. 2, as shown in Figure 2, side of the invention are carried out
Case realizes 1.67 × 1019cm-3Al element Uniform Doped.
Experimental example 2:
A kind of method of the Uniform Doped of SiC single crystal metal impurities, comprises the following steps that
(1) B of purity 5N is chosen4C weighs 0.362g (B content 0.285g) and 1000g high-purity alpha-SiC powder as doped source
Material, is put into ball mill mixing 12h.
(2) after mixing, by step (1), treated that powder is put into long 180mm, high-purity sealing stone of diameter 300mm
Black crucible.Selection flat-temperature zone is 20cm, can be heated to 2000 ° of heating equipment, and high-purity sealed graphite crucible is placed constant temperature
Area.After closing heating equipment, takes out repeatedly and remove air remaining in growth chamber after filling, be passed through argon gas as background gas, pressure
Keep normal pressure.Be warming up to 2300 DEG C in 2h simultaneously, and keep after 2h with fast cooling to room temperature, cooling rate be greater than 15 DEG C/
min.Take out established metal-doped uniform polycrystalline block.
(3) by step (2) treated polycrystalline block with diamond cut wire cutting at 10*10*10mm3Square, and it is clear
Wash clean.
(4) the SiC polycrystalline block of step (3) treated 100g is uniformly placed into the SiC powder of 1000g and is mixed again
It closes, is put into PVT growth graphite crucible, SiC single crystal growth is carried out using PVT method.Obtain uniformly mixing for set doping concentration
The SiC of miscellaneous metal impurities.After growth, electrical properties and SIMS measurement are carried out, as a result as shown in figure 3, realizing the equal of B element
Even doping.
Claims (6)
1. a kind of method of the Uniform Doped of SiC single crystal metal impurities, comprises the following steps that
(1) uniformly mixed by SiC powder and to dopant material, using to solid solubility of the dopant material in SiC as wait mix
The maximum doping variable of miscellaneous material；
(2) after mixing, mixed powder is filled up into high-purity sealed graphite crucible, and be put into heating equipment, is placed in perseverance
Warm area；After closing heating equipment, takes out repeatedly and remove air remaining in growth chamber after filling, be passed through inert gas as background gas
Body, pressure keep normal pressure；Then it heats up, is cooled to room temperature after heat preservation again；Take out established metal-doped uniform polycrystalline block；
(3) by step (2) treated polycrystalline block is cut into bulk polycrystal, bulk polycrystal is cubic block or pane；
(4) bulk polycrystal powder is uniformly mixed again with growth with SiC highly pure powder, and is put into PVT growth graphite crucible
Middle carry out crystal growth, routinely method for monocrystal growth obtains the SiC of the Uniform Doped metal impurities of set doping concentration.
2. the method for the Uniform Doped of SiC single crystal metal impurities according to claim 1, which is characterized in that step (1)
In, described to dopant material is one or more of metal, oxide, carbide or silicide.
3. the method for the Uniform Doped of SiC single crystal metal impurities according to claim 2, which is characterized in that step (1)
In, the hybrid mode includes ball milling or stirring.
4. the method for the Uniform Doped of SiC single crystal metal impurities according to claim 1, which is characterized in that step (2)
In, being passed through as the inert gas of background gas is argon gas.
5. the method for the Uniform Doped of SiC single crystal metal impurities according to claim 4, which is characterized in that step (2)
In, after being passed through argon gas, it is warming up to 1800-2500 DEG C, 10 minutes heating-up times -48h.
6. the method for the Uniform Doped of SiC single crystal metal impurities according to claim 5, which is characterized in that step (2)
In, 2-48h is kept the temperature after heating is cooled to room temperature, 2-50 DEG C of cooling rate/min again.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699752A (en) * | 2019-10-30 | 2020-01-17 | 中国科学院上海硅酸盐研究所 | Method for growing weak magnetic Fe-V co-doped SiC crystal step by step |
| CN111575795A (en) * | 2020-05-15 | 2020-08-25 | 南通大学 | Preparation method of blue morusite |
| CN113026093A (en) * | 2019-12-25 | 2021-06-25 | 北京天科合达半导体股份有限公司 | Semi-insulating silicon carbide wafer with uniform resistivity and preparation method thereof |
| WO2022000997A1 (en) * | 2020-06-30 | 2022-01-06 | 山东天岳先进科技股份有限公司 | Rare earth element-doped silicon carbide powder |
| CN114790573A (en) * | 2022-03-09 | 2022-07-26 | 山东大学 | Growth method of p-type SiC with high doping uniformity |
| WO2022243557A1 (en) | 2021-05-21 | 2022-11-24 | TRUMPF Hüttinger GmbH + Co. KG | Crystal manufacturing induction heating assembly, and method and inductor assembly therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350399A (en) * | 1986-08-18 | 1988-03-03 | Sanyo Electric Co Ltd | Method for growing p-type sic single crystal |
| CN101812723A (en) * | 2010-04-20 | 2010-08-25 | 中国科学院上海硅酸盐研究所 | Method and device for growing silicon carbide signal crystals based on physical vapor transport technology |
| CN105271234A (en) * | 2015-10-09 | 2016-01-27 | 张家港市东大工业技术研究院 | Method for synthesizing p type doped silicon carbide by microwave in situ reaction |
| CN106894090A (en) * | 2017-03-17 | 2017-06-27 | 山东大学 | A kind of p-type SiC single crystal preparation method of high-quality low-resistivity |
| CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
-
2019
- 2019-03-12 CN CN201910186571.1A patent/CN109722712B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350399A (en) * | 1986-08-18 | 1988-03-03 | Sanyo Electric Co Ltd | Method for growing p-type sic single crystal |
| CN101812723A (en) * | 2010-04-20 | 2010-08-25 | 中国科学院上海硅酸盐研究所 | Method and device for growing silicon carbide signal crystals based on physical vapor transport technology |
| CN105271234A (en) * | 2015-10-09 | 2016-01-27 | 张家港市东大工业技术研究院 | Method for synthesizing p type doped silicon carbide by microwave in situ reaction |
| CN106894090A (en) * | 2017-03-17 | 2017-06-27 | 山东大学 | A kind of p-type SiC single crystal preparation method of high-quality low-resistivity |
| CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
Non-Patent Citations (1)
| Title |
|---|
| 苏剑峰: "宽禁带半导体SiC和ZnO的外延生长及其掺杂的研究", 《中国博士学位论文电子期刊网》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110699752A (en) * | 2019-10-30 | 2020-01-17 | 中国科学院上海硅酸盐研究所 | Method for growing weak magnetic Fe-V co-doped SiC crystal step by step |
| CN110699752B (en) * | 2019-10-30 | 2022-03-22 | 安徽微芯长江半导体材料有限公司 | Method for growing weak magnetic Fe-V co-doped SiC crystal step by step |
| CN113026093A (en) * | 2019-12-25 | 2021-06-25 | 北京天科合达半导体股份有限公司 | Semi-insulating silicon carbide wafer with uniform resistivity and preparation method thereof |
| CN113026093B (en) * | 2019-12-25 | 2022-08-12 | 北京天科合达半导体股份有限公司 | Semi-insulating silicon carbide wafer with uniform resistivity and preparation method thereof |
| CN111575795A (en) * | 2020-05-15 | 2020-08-25 | 南通大学 | Preparation method of blue morusite |
| WO2022000997A1 (en) * | 2020-06-30 | 2022-01-06 | 山东天岳先进科技股份有限公司 | Rare earth element-doped silicon carbide powder |
| WO2022243557A1 (en) | 2021-05-21 | 2022-11-24 | TRUMPF Hüttinger GmbH + Co. KG | Crystal manufacturing induction heating assembly, and method and inductor assembly therefor |
| DE212022000210U1 (en) | 2021-05-21 | 2024-02-21 | TRUMPF Hüttinger GmbH + Co. KG | Crystal manufacturing induction heating assembly and an inductor assembly therefor |
| CN114790573A (en) * | 2022-03-09 | 2022-07-26 | 山东大学 | Growth method of p-type SiC with high doping uniformity |
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