CN105006427B - A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer - Google Patents
A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer Download PDFInfo
- Publication number
- CN105006427B CN105006427B CN201510470018.2A CN201510470018A CN105006427B CN 105006427 B CN105006427 B CN 105006427B CN 201510470018 A CN201510470018 A CN 201510470018A CN 105006427 B CN105006427 B CN 105006427B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- layer
- temperature
- grown
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 61
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 47
- 239000012792 core layer Substances 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H01L21/2056—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer, it is related to technical field of semiconductors.This method comprises the following steps:1)Using MOCVD technologies, after being heat-treated at high temperature to substrate, cooling;2)In one layer of low-temperature nitride forming core layer of Grown;3)Annealing, realize that forming core layer crystallizes;4)Temperature is raised, grows one layer of gallium nitride on forming core layer after annealing;5)Stopping is passed through gallium source, and stop growing gallium nitride, cooling;6)Continue to be passed through gallium source growing gallium nitride, and raise temperature;7)Grow insert layer, channel layer, cap and passivation layer successively on that gallium nitride layer, the epitaxial structure completed.The present invention effectively reduces epitaxial layer of gallium nitride dislocation density using low temperature buffer layer, improves gallium nitride quality, and then improve the service life and efficiency of gallium-nitride-based devices.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to one kind to be grown outside high-quality gallium nitride using low temperature buffer layer
Prolong the method for structure.
Background technology
As the Typical Representative of third generation semiconductor, gallium nitride material is due to wide energy gap, high velocity of electrons
The features such as, gallium-nitride-based devices are widely used in the electronic systems such as radio communication, radar in microwave, millimeter wave frequency band, in photoelectricity
Son and microelectronic development prospect are very wide.
At present, the main method for obtaining gallium nitride epitaxial materialses is by including nitridation in substrate Epitaxial growth, substrate
Gallium, sapphire, carborundum, aluminium nitride and silicon-based substrate etc..It is but larger due to existing between gallium nitride material and substrate
Lattice mismatch and thermal expansion mismatch,(It is 16% such as with sapphire mismatch, is 3.4% with carborundum mismatch, is with silicon substrate mismatch
17%)So that the gallium nitride epitaxial materialses of growth introduce substantial amounts of dislocation and defect, and defect concentration is up to 108~1010 cm-2,
And then it have impact on the service life and service efficiency of gallium-nitride-based devices.
The method of traditional growing gallium nitride epitaxial material is, first in one layer of nitride forming core layer of Grown, so
Continuous high temperature growing gallium nitride epitaxial material on forming core layer after annealing crystallization afterwards.Due to the nitride forming core layer of low-temperature epitaxy
In the presence of substantial amounts of dislocation and defect, nucleus is second-rate, on this basis during high growth temperature gallium nitride epitaxial materialses, due to lattice
Mismatch dislocation and defect caused by mismatching with thermal expansion to continue to extend, the dislocation and defect of gallium nitride epitaxial materialses are still very
More, epitaxial material crystal mass is still very poor.
The content of the invention
The technical problems to be solved by the invention are to provide one kind using low temperature buffer layer growth high-quality gallium nitride extension
The method of structure, it is by during growing gallium nitride, insertion one layer of low temperature buffer layer of growth, further lifting gallium nitride
Crystal mass, improve the efficiency and service life of device.
In order to solve the above technical problems, the technical solution used in the present invention is:One kind is high using low temperature buffer layer growth
The method of quality gallium nitride epitaxial structure, this method comprise the following steps:
1)Using MOCVD technologies, after being heat-treated at high temperature to substrate, cooling;
2)In one layer of low-temperature nitride forming core layer of Grown;
3)Annealing, realize that forming core layer crystallizes;
4)Temperature is raised, grows one layer of gallium nitride on forming core layer after annealing;
5)Stopping is passed through gallium source, and stop growing gallium nitride, cooling;
6)Continue to be passed through gallium source growing gallium nitride, and raise temperature;
7)Grow insert layer, channel layer, cap and passivation layer successively on that gallium nitride layer, the epitaxy junction completed
Structure.
Preferably, the step 1)In substrate for gallium nitride, sapphire, SiC, Si, AlN, SiO2, diamond, graphite
Any one in alkene.
Preferably, the step 1)The MOCVD technologies of middle use, made by the use of ammonia as nitrogen source, nitrogen or hydrogen
For carrier gas, trimethyl gallium or triethyl-gallium, trimethyl aluminium, trimethyl indium are respectively as gallium source, silicon source and indium source, and silane is as silicon
Source.
Preferably, the step 2)The temperature of middle growing nitride forming core layer is 20 DEG C~1000 DEG C of room temperature, forming core thickness
Spend for 0~100nm.
Preferably, the step 3)Middle annealing temperature is 600 DEG C~1200 DEG C, and annealing time is 0~1000s.
Preferably, the step 4)On forming core layer after annealing grow one layer of gallium nitride growth temperature for 800 DEG C~
1300 DEG C, thickness is 0~1 μm;
Preferably, the step 5)Middle rate of temperature fall is 0~1000 DEG C/s, and temperature is 20 DEG C~1000 DEG C.
It is using beneficial effect caused by above-mentioned technical proposal:The present invention is in sapphire or carborundum or silicon substrate etc.
In foreign substrate, one layer of nitride forming core layer of low-temperature epitaxy, then after to forming core layer annealing crystallization, high growth temperature layer
Gallium nitride, then stop be passed through gallium source and cool, formed low temperature buffer layer, i.e., " dead level ", then rise temperature continued growth
Gallium nitride epitaxial materialses;The presence of " dead level ", releases stress, blocks a part of dislocation and continues to extend, reduces gallium nitride
The dislocation density of epitaxial material, improve the crystal mass of gallium nitride epitaxial materialses.The present invention can utilize low temperature " dead level " effective
Reduce epitaxial layer of gallium nitride dislocation density, improve gallium nitride quality, and then improve gallium-nitride-based devices service life and
Efficiency, while the present invention has wider growth technique window.
Brief description of the drawings
Fig. 1 is flow chart of the present invention;
Fig. 2 is the temperature curve of traditional Grown on Sapphire Substrates epitaxy of gallium nitride;
Fig. 3 is the temperature curve of growing gallium nitride extension on a sapphire substrate of the invention;
Fig. 4 is the gallium nitride sample of this example(102)X ray double crystal diffraction curve, abscissa are ω scanning direction angles
(Arc s), ordinate is relative intensity.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
As shown in figure 1, the present invention provides a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer,
By taking Sapphire Substrate as an example, comprise the following steps:
1)Using MOCVD technologies, Sapphire Substrate is heat-treated in MOCVD reative cells:In a hydrogen atmosphere, temperature is tieed up
Hold at 800 DEG C~1300 DEG C, continue 300 s to 2000s;Then cool, MOCVD technologies therein, be by the use of ammonia as
Nitrogen source, nitrogen or hydrogen are as carrier gas, and trimethyl gallium or triethyl-gallium, trimethyl aluminium, trimethyl indium are respectively as gallium source, aluminium
Source and indium source, silane is as silicon source.
2)In one layer of low-temperature nitride forming core layer of Grown:Wherein the growth temperature of forming core layer is 20 DEG C~1000
DEG C, chamber pressure is 50~500mbar, V/III about 300~3000, forming core thickness degree is 0~100nm.
3)Annealing, realize that forming core layer crystallizes:Reaction chamber temperature is increased to annealing temperature:600 DEG C~1200 DEG C, annealing time
For 0~1000s, make nitride forming core layer remaining a small amount of nucleus after annealing.
4)Raise and grow one layer of gallium nitride on the forming core layer of temperature after annealing:Wherein growth temperature is 800 DEG C~1300
DEG C, chamber pressure is the mbar of 100 mbar~1000, V/III about 300~400.
5)Stop growing gallium nitride, cooling:Under NH3 atmosphere protections, stopping is passed through trimethyl gallium, and rate of temperature fall is 0~
1000 DEG C/s, temperature is 20 DEG C~1000 DEG C, and chamber pressure is constant, as shown in Figure 3.
6)Heating, continued growth gallium nitride:Trimethyl gallium source is passed through, is heated up, wherein growth temperature is 800 DEG C~1300
DEG C, chamber pressure is the mbar of 100 mbar~1000, V/III about 300~400.
7)Insert layer, channel layer, cap and passivation layer are grown successively in gallium nitride layer, obtain complete epitaxial structure.
As shown in figure 4, the gallium nitride sample of case study on implementation of the present invention(102)X-ray diffraction twin crystal curve, wherein horizontal seat
It is designated as ω scanning direction angles(Second of arc), ordinate is relative intensity;X-ray diffraction twin crystal curve halfwidth degree very little, about 300
Second of arc, illustrate that the gallium nitride quality that the present invention obtains is improved, and then improve the service life and efficiency of device, simultaneously should
Method growing gallium nitride epitaxial structure has very wide growth technique window.
Claims (6)
- A kind of 1. method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer, it is characterised in that:This method includes Following steps:1)Using MOCVD technologies, after being heat-treated at high temperature to substrate, cooling;2)In one layer of low-temperature nitride forming core layer of Grown;3)Annealing, realize that forming core layer crystallizes;4)Temperature is raised, grows one layer of gallium nitride on forming core layer after annealing;5)Stopping is passed through gallium source, and stop growing gallium nitride, cooling;6)Continue to be passed through gallium source growing gallium nitride, and raise temperature;7)Grow insert layer, channel layer, cap and passivation layer successively on that gallium nitride layer, the epitaxial structure completed;The step 5)Middle rate of temperature fall is 0~1000 DEG C/s, and temperature is 20 DEG C~1000 DEG C.
- 2. a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer according to claim 1, its It is characterised by:The step 1)In substrate for gallium nitride, sapphire, SiC, Si, AlN, SiO2, diamond, in graphene Any one.
- 3. a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer according to claim 1, its It is characterised by:The step 1)The MOCVD technologies of middle use, be by the use of ammonia as nitrogen source, nitrogen or hydrogen as carrier gas, Trimethyl gallium or triethyl-gallium, trimethyl aluminium, trimethyl indium are respectively as gallium source, silicon source and indium source, and silane is as silicon source.
- 4. a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer according to claim 1, its It is characterised by:The step 2)The temperature of middle growing nitride forming core layer is 20 DEG C~1000 DEG C of room temperature, forming core thickness degree is 0~ 100nm。
- 5. a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer according to claim 1, its It is characterised by:The step 3)Middle annealing temperature is 600 DEG C~1200 DEG C, and annealing time is 0~1000s.
- 6. a kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer according to claim 1, its It is characterised by:The step 4)The growth temperature that one layer of gallium nitride is grown on forming core layer after annealing is 800 DEG C~1300 DEG C, Thickness is 0~1 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510470018.2A CN105006427B (en) | 2015-08-04 | 2015-08-04 | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510470018.2A CN105006427B (en) | 2015-08-04 | 2015-08-04 | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105006427A CN105006427A (en) | 2015-10-28 |
CN105006427B true CN105006427B (en) | 2018-01-30 |
Family
ID=54379053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510470018.2A Active CN105006427B (en) | 2015-08-04 | 2015-08-04 | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105006427B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110517950B (en) * | 2019-07-29 | 2021-06-18 | 太原理工大学 | Method for preparing sphalerite GaN film on diamond substrate |
CN111681953B (en) * | 2020-05-20 | 2022-08-16 | 中国电子科技集团公司第五十五研究所 | Growth method for improving interface quality of gallium nitride heteroepitaxy |
CN112687525B (en) * | 2020-12-24 | 2022-07-22 | 中国电子科技集团公司第五十五研究所 | Epitaxial method for improving quality of ultrathin gallium nitride field effect transistor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114594A (en) * | 2007-08-28 | 2008-01-30 | 中国电子科技集团公司第十三研究所 | Method for improving gallium nitride based transistor material and device performance using indium doping |
CN101924022A (en) * | 2010-04-21 | 2010-12-22 | 中国科学院半导体研究所 | Method for growing GaN and InGaN by adopting InxGa1-xN buffer layer |
CN102544271A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing high-quality gallium nitride epitaxial structure by using two nucleating layers |
CN103849853A (en) * | 2014-02-21 | 2014-06-11 | 中国科学院半导体研究所 | Method for relieving stress between silicon substrate and gallium nitride film during MOCVD (Metal Organic Chemical Vapor Deposition) process |
CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100583163B1 (en) * | 2002-08-19 | 2006-05-23 | 엘지이노텍 주식회사 | Nitride semiconductor and fabrication method for thereof |
-
2015
- 2015-08-04 CN CN201510470018.2A patent/CN105006427B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114594A (en) * | 2007-08-28 | 2008-01-30 | 中国电子科技集团公司第十三研究所 | Method for improving gallium nitride based transistor material and device performance using indium doping |
CN101924022A (en) * | 2010-04-21 | 2010-12-22 | 中国科学院半导体研究所 | Method for growing GaN and InGaN by adopting InxGa1-xN buffer layer |
CN102544271A (en) * | 2012-03-21 | 2012-07-04 | 中国科学院半导体研究所 | Method for growing high-quality gallium nitride epitaxial structure by using two nucleating layers |
CN103849853A (en) * | 2014-02-21 | 2014-06-11 | 中国科学院半导体研究所 | Method for relieving stress between silicon substrate and gallium nitride film during MOCVD (Metal Organic Chemical Vapor Deposition) process |
CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
Also Published As
Publication number | Publication date |
---|---|
CN105006427A (en) | 2015-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101335200B (en) | AIN film preparing method | |
CN109346400B (en) | High-quality Ga2O3Film and heteroepitaxial preparation method thereof | |
CN105655238A (en) | Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride | |
CN104576714B (en) | High mobility GaN base heterojunction structure and preparation method thereof on a kind of silicon | |
CN113206003A (en) | Method for growing single crystal gallium nitride film on random self-supporting substrate | |
CN105006427B (en) | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer | |
CN108878266B (en) | Method for growing single crystal gallium nitride film on polycrystalline or amorphous substrate | |
CN104779141A (en) | Preparation method of low-deflection angle silicon carbide homogeneous epitaxial material | |
CN114899099A (en) | Epitaxial method for growing gallium nitride high electron mobility transistor on diamond substrate | |
CN101471245A (en) | Method for transversal epitaxial growth of gallium nitride on Si substrate | |
CN112687525B (en) | Epitaxial method for improving quality of ultrathin gallium nitride field effect transistor | |
CN102856359B (en) | Semiconductor extension structure and growing method thereof | |
CN105762061B (en) | Epitaxial growth method of nitride | |
JP4904726B2 (en) | Semiconductor epitaxial wafer and method for manufacturing semiconductor epitaxial wafer for HEMT | |
CN104465720A (en) | Semiconductor epitaxial structure and growth method thereof | |
CN105810725A (en) | Silicon-based gallium nitride semiconductor wafer and manufacturing method thereof | |
US11183385B2 (en) | Method for passivating silicon carbide epitaxial layer | |
CN114250510B (en) | Epitaxial structure for gallium nitride-based radio frequency device and preparation method thereof | |
CN107611014A (en) | A kind of preparation method of GaN thermoelectric film materials | |
CN204809246U (en) | Gan base led epitaxial structure | |
CN110517950B (en) | Method for preparing sphalerite GaN film on diamond substrate | |
KR20040069526A (en) | Crystal growth method of nitride compound semiconductor | |
CN113089091A (en) | Boron nitride template and preparation method thereof | |
KR20040078211A (en) | Method for manufacturing GaN substrate | |
CN112259446A (en) | Method for efficiently preparing gallium nitride substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |